JPS6016724B2 - resistive thin film - Google Patents
resistive thin filmInfo
- Publication number
- JPS6016724B2 JPS6016724B2 JP55080576A JP8057680A JPS6016724B2 JP S6016724 B2 JPS6016724 B2 JP S6016724B2 JP 55080576 A JP55080576 A JP 55080576A JP 8057680 A JP8057680 A JP 8057680A JP S6016724 B2 JPS6016724 B2 JP S6016724B2
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- thin film
- resistive thin
- temperature coefficient
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 title claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000011651 chromium Substances 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910019590 Cr-N Inorganic materials 0.000 description 2
- 229910019588 Cr—N Inorganic materials 0.000 description 2
- 229910019819 Cr—Si Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 241000219112 Cucumis Species 0.000 description 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 1
- GZWXHPJXQLOTPB-UHFFFAOYSA-N [Si].[Ni].[Cr] Chemical compound [Si].[Ni].[Cr] GZWXHPJXQLOTPB-UHFFFAOYSA-N 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- -1 nickel-chromium aluminum Chemical compound 0.000 description 1
- CAQRFUZAAAEILW-UHFFFAOYSA-N oxygen(2-) tin(4+) titanium(4+) Chemical compound [O--].[O--].[O--].[O--].[Ti+4].[Sn+4] CAQRFUZAAAEILW-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Non-Adjustable Resistors (AREA)
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】
本発明は、電子部品として使用される抵抗薄膜に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a resistive thin film used as an electronic component.
この種抵抗薄膜として具備すべき好ましく特性としては
、面積抵抗が比較的大きいこと、安定性すなわち抵抗値
の蓬時変化が小さいこと、抵抗温度係数が小さいこと、
また抵抗温度係数の経時変化が４・さし、こと、電流雑
音が小さいこと、非直線性（第３高調波）が大きいこと
等の種々にわたる特性が要求される。Preferred characteristics that this type of resistive thin film should have include a relatively large sheet resistance, stability, that is, small change in resistance value during operation, and a small temperature coefficient of resistance.
In addition, various characteristics are required, such as a change in temperature coefficient of resistance over time of about 4 mm, low current noise, and large nonlinearity (third harmonic).
さらに、近年はこの抵抗温度係数に対して中心値が０〜
２母風／℃といった小さいものの要求が市場からも強ま
ってきている。本発明はこれらの特性を満足し、かつ安
価にして安定的に抵抗薄膜を提供することを目的とする
。従釆、抵抗薄膜はスパッタリングや電子ビーム蒸着、
抵抗加熱蒸着等により、基体上に被着することにより作
られている。Furthermore, in recent years, the center value of this resistance temperature coefficient has become 0~
Demand for small wind turbines such as 2 mother wind/°C is increasing from the market. It is an object of the present invention to provide a stable resistive thin film that satisfies these characteristics and is inexpensive. Accordingly, resistive thin films can be made by sputtering, electron beam evaporation,
It is made by depositing it on a substrate by resistance heating vapor deposition or the like.
そして、薄膜材料としては、窒化タンタル（ＴａＮ）、
室化チタン（ＴＩＮ）やニッケルークローム（Ｎｉ一Ｃ
ｒ）合金、ニッケル−クロームーアルミニウム（Ｎｉ−
Ｃｒ−Ｎ）合金、ニッケルークロームーシリコン（Ｎｉ
−Ｃｒ−Ｓｉ）合金等が実用化されている。しかし、Ｔ
ＩＮやＴａＮは微星のＮ２ガスを導入する反応性着膜を
必要とするため、制御が難かしく、再現性が得にくい。
また、Ｎｉ−Ｃｒは比抵坑が高く、その酸化皮膜は繊密
で耐熱性、耐薬品性とも優れてはいるが、その抵抗温度
係数は１００〜１５０脚／℃と大きい。さらに、Ｎｉ−
Ｃｒ一ＡＩ，Ｎｉ−Ｃｒ−Ｓｉは繊密で耐熱性、耐薬品
性に富み、抵抗温度係数も小さいが、ＮもしくはＳｉ量
が最適条件から少しでも外れると抵抗温度係数は大きく
なるため、ＡＩもしくはＳｉの微妙な量の加減が必要で
あり、小さい抵抗温度係数の抵抗薄膜を安定に継続して
作るには高度の製造技術が必要である。本発明は上記の
ような点に鑑みてなされたものであり、以下その実施例
について詳細に説明するｃまず、アルミナ円柱形の基体
にＤＣマグネトロンスパッタリング法により合金ターゲ
ットからニッケル（Ｎｉ）、クローム（Ｃｒ）、シリコ
ン（Ｓｉ）、スカンジウム（Ｓｃ）をスパッタリングし
て着膜させた。The thin film materials include tantalum nitride (TaN),
Titanium oxide (TIN) and nickel-chrome (Ni-C)
r) Alloy, nickel-chromium aluminum (Ni-
Cr-N) alloy, nickel-chromium silicon (Ni
-Cr-Si) alloys have been put into practical use. However, T
Since IN and TaN require reactive deposition by introducing microscopic N2 gas, they are difficult to control and difficult to achieve reproducibility.
Further, although Ni-Cr has a high specific resistance and its oxide film is dense and has excellent heat resistance and chemical resistance, its temperature coefficient of resistance is as large as 100 to 150 feet/°C. Furthermore, Ni-
Cr-AI and Ni-Cr-Si are delicate, have high heat resistance and chemical resistance, and have a small temperature coefficient of resistance. However, if the amount of N or Si deviates even slightly from the optimum conditions, the temperature coefficient of resistance increases, Otherwise, it is necessary to delicately adjust the amount of Si, and advanced manufacturing technology is required to stably and continuously produce a resistive thin film with a small resistance temperature coefficient. The present invention has been made in view of the above points, and examples thereof will be described in detail below. First, nickel (Ni), chromium ( Cr), silicon (Si), and scandium (Sc) were deposited by sputtering.
この時の各成分の比率は下記の表１に示す通りである。
ついで、着膜された基体を加熱炉に入れ、空気中で４０
０℃、１時間の加熱処理を行った。こうして得られた着
膜済基体の両端にリード線付キャップをかしめっけし、
試料とした。この試料の抵抗温度係数、比抵抗を各１の
固の平均値で調べた結果を下記の表２に示す。また、表
２には参考としてニッケル、クロームを用い、上記と同
一条件で作成した試料の特性値を併せて示している。な
お、抵抗温度係数は十２５ｑｏ、十７５ｑｏの２点間で
測定した。く表 １＞く表 ２＞
曲 成分比はＮｉ−ｏｒ（８０：２０）に対する添加成
分比を示す。The ratio of each component at this time is as shown in Table 1 below.
Next, the film-coated substrate was placed in a heating furnace and heated in air for 40 minutes.
Heat treatment was performed at 0°C for 1 hour. Caps with lead wires are caulked onto both ends of the film-coated substrate obtained in this way,
It was used as a sample. The temperature coefficient of resistance and specific resistance of this sample were investigated using the average values of each 1, and the results are shown in Table 2 below. Table 2 also shows the characteristic values of samples prepared under the same conditions as above using nickel and chromium as a reference. The temperature coefficient of resistance was measured between two points, 125 qo and 175 qo. Table 1> Table 2> Song The component ratio indicates the ratio of added components to Ni-or (80:20).
上記の表のように本発明による実施例１〜４と参考例と
では、抵抗温度係数が著しく異なる。また、従来より抵
抗薄膜として使用されているＮｉ−Ｃｒ‐Ｎの場合、Ａ
Ｉの比率を０．７〜６程度変えた時、抵抗温度係数は２
０〜３瓜血／℃程度変動する。これに対して、ニッケル
、クローム、シリコンおよびスカンジウムよりなる抵抗
薄膜は抵抗温度係数が小さく、また一部の成分の比率が
変わってもその抵抗温度係数の値は安定しているため、
製造時に比率の微妙な加減をしないで、比較的楽に所望
の抵抗薄膜を得ることができる。また、電流雑音は完成
抵抗値２００ＫＱで０．０４仏Ｖ／Ｖ程度、第３高調波
指数は２０血０で１３ＭＢ程度と良い特性を示した。さ
らに、温度１２５ｑ０で定格電力（例１／４Ｗ）を１．
即時間印加し、３０分切るということを繰り返す負荷寿
命試験を行ったところ、図に示すような結果を得た。そ
れぞれ本発明品（Ｎｉ：Ｃｒ：Ｓｉ：Ｓｃ：８０：２０
：３：０．３５）による特性ａ、従来品（Ｎｉ：Ｃｒ：
Ｎ＝８０：２０：３）による特性ｂ、同じく従来品（Ｎ
ｉ：Ｃｒ＝８０：２０）による特性ｃを比較したもので
ある。図より２００ｑ時間の加速試験を経て本発明の抵
抗薄膜が長期使用状態においても安定であり、寿命的に
も効果のあることが鱗る。以上のように本発明の抵抗薄
膜は、各種の特性において良好な値を示し、かつ安価に
して安定的に製作することができ、その産業性は大なる
ものである。As shown in the table above, Examples 1 to 4 according to the present invention and the reference example have significantly different temperature coefficients of resistance. In addition, in the case of Ni-Cr-N, which has been conventionally used as a resistive thin film, A
When the ratio of I is changed by about 0.7 to 6, the temperature coefficient of resistance becomes 2.
It fluctuates by about 0 to 3 melon blood/℃. On the other hand, a resistive thin film made of nickel, chromium, silicon, and scandium has a small resistance temperature coefficient, and even if the ratio of some components changes, the resistance temperature coefficient value remains stable.
A desired resistive thin film can be obtained relatively easily without delicately adjusting the ratio during manufacturing. In addition, the current noise was about 0.04 French V/V at a completed resistance value of 200 KQ, and the third harmonic index was about 13 MB at 20 KQ, showing good characteristics. Furthermore, at a temperature of 125q0, the rated power (example 1/4W) is set to 1.
When a load life test was conducted in which the load was applied immediately and then turned off for 30 minutes, the results shown in the figure were obtained. Inventive products (Ni:Cr:Si:Sc:80:20)
:3:0.35), conventional product (Ni:Cr:
Characteristic b due to N = 80:20:3), same as the conventional product (N
i:Cr=80:20). From the figure, it can be seen that the resistive thin film of the present invention is stable even in long-term use after undergoing an accelerated test of 200 q hours, and is effective in terms of longevity. As described above, the resistive thin film of the present invention exhibits good values in various properties, can be manufactured stably at low cost, and has great industrial efficiency.
図は本発明品と従来品による負荷寿命試験結果を比較し
て示す図である。The figure is a diagram showing a comparison of the results of a load life test between a product of the present invention and a conventional product.
Claims (1)
からなることを特徴とする抵抗薄膜。1. A resistive thin film characterized by being composed of nickel, chromium, silicon and scandium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55080576A JPS6016724B2 (en) | 1980-06-13 | 1980-06-13 | resistive thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55080576A JPS6016724B2 (en) | 1980-06-13 | 1980-06-13 | resistive thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS575301A JPS575301A (en) | 1982-01-12 |
| JPS6016724B2 true JPS6016724B2 (en) | 1985-04-27 |
Family
ID=13722161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55080576A Expired JPS6016724B2 (en) | 1980-06-13 | 1980-06-13 | resistive thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6016724B2 (en) |
-
1980
- 1980-06-13 JP JP55080576A patent/JPS6016724B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS575301A (en) | 1982-01-12 |
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