JPS6024563B2 - resistive thin film - Google Patents
resistive thin filmInfo
- Publication number
- JPS6024563B2 JPS6024563B2 JP55080582A JP8058280A JPS6024563B2 JP S6024563 B2 JPS6024563 B2 JP S6024563B2 JP 55080582 A JP55080582 A JP 55080582A JP 8058280 A JP8058280 A JP 8058280A JP S6024563 B2 JPS6024563 B2 JP S6024563B2
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- thin film
- resistive thin
- temperature coefficient
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 title claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 13
- 239000011651 chromium Substances 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910019819 Cr—Si Inorganic materials 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 241000238631 Hexapoda Species 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- GZWXHPJXQLOTPB-UHFFFAOYSA-N [Si].[Ni].[Cr] Chemical compound [Si].[Ni].[Cr] GZWXHPJXQLOTPB-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- -1 nickel-chromium aluminum Chemical compound 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Non-Adjustable Resistors (AREA)
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】
本発明は、電子部品として使用される抵抗薄膜に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a resistive thin film used as an electronic component.
この種抵抗薄膜として具備すべき好ましい特性としては
、面積抵抗が比較的大きいこと、安定性すなわち抵抗値
の経時変化が４・ごいこと、抵抗温度係数が小さいこと
、また抵抗温度係数の経時変化が小さいこと、電流雑音
が小さいこと、非直線性（第３高調波）が大きいこと等
の種々にわたる特性が要求される。The desirable characteristics that this type of resistive thin film should have are a relatively large sheet resistance, stability, that is, a change in resistance value over time of 4.0, a small temperature coefficient of resistance, and a low change in temperature coefficient of resistance over time. Various characteristics are required, such as small size, low current noise, and high nonlinearity (third harmonic).
さらに、近年はこの抵抗温度係数に対して中心値が０〜
２＆柳／℃といった小さいものの要求が市場からも強ま
ってきている。本発明はこれらの特性を満足し、かつ安
価にして安定的に抵抗薄膜を提供することを目的とする
。従来、抵抗薄膜はスパッタリングや電子ビーム蒸着、
抵抗加熱蒸着等により、基体上に彼着することにより作
られている。Furthermore, in recent years, the center value of this resistance temperature coefficient has become 0~
Demand for smaller products such as 2 & Yanagi/℃ is increasing from the market. It is an object of the present invention to provide a stable resistive thin film that satisfies these characteristics and is inexpensive. Conventionally, resistive thin films have been produced by sputtering, electron beam evaporation,
It is made by depositing it on a substrate using resistance heating vapor deposition or the like.
そして、薄膜材料としては、窒化タンタル（ＴａＮ）、
窒化チタン（ＴＩＮ）やニッケルークローム（Ｎｉ一Ｃ
ｒ）合金、ニッケル−クロームーアルミニウム（Ｎｉ一
Ｃｒ−Ｎ）合金、ニッケルークロームーシリコン（Ｎｉ
−Ｃｒ−Ｓｉ）合金等が実用化されている。しかし、Ｔ
ＩＮやＴａＮは徴量のＮ２ガスを導入する反応性着膜を
必要とするため、制御が難かしく、再現性が得にくい。
また、Ｎｉ−Ｃｒは比抵抗が高く、その酸化皮膜は繊密
で耐熱性、耐薬品性とも優れているが、その抵抗温度係
数は１００〜１５Ｑ風／℃と大きい。さらに、Ｎｉ−Ｃ
ｒ−Ｎ、Ｎｉ−Ｃｒ−Ｓｉは繊密で耐熱性、耐薬品性に
富み、抵抗温度係数も小さいが、ＮもしくはＳｉ量が最
適条件から少しでも外れると抵抗温度係数は大きくなる
ため、ＡＩもしくはＳｉの微妙な量の加減が必要であり
、４・さし、抵抗温度係数の抵抗薄膜を安定に継続して
作るには高度の製造技術が必要である。本発明は上記の
ような点に鑑みてなされたものであり、以下その実施例
について詳細に説明する。The thin film materials include tantalum nitride (TaN),
Titanium nitride (TIN) and nickel-chrome (Ni-C)
r) alloy, nickel-chromium aluminum (Ni-Cr-N) alloy, nickel-chromium silicon (Ni
-Cr-Si) alloys have been put into practical use. However, T
Since IN and TaN require reactive film deposition in which a certain amount of N2 gas is introduced, control is difficult and reproducibility is difficult to obtain.
Further, Ni-Cr has a high specific resistance, and its oxide film is dense and has excellent heat resistance and chemical resistance, but its temperature coefficient of resistance is as large as 100 to 15Q wind/°C. Furthermore, Ni-C
r-N, Ni-Cr-Si are dense, have high heat resistance and chemical resistance, and have a small temperature coefficient of resistance, but if the amount of N or Si deviates even slightly from the optimum conditions, the temperature coefficient of resistance increases, so AI Otherwise, it is necessary to delicately adjust the amount of Si, and advanced manufacturing technology is required to stably and continuously produce a resistive thin film with a temperature coefficient of resistance of 4. The present invention has been made in view of the above points, and embodiments thereof will be described in detail below.
まず、アルミナ円柱形の基体にＤＣマグネトロンスパツ
タリング法により合金ターゲットからニッケル（Ｎｉ）
、クローム（Ｃｒ）、アルミニウム（山）、スカンジウ
ム（Ｓｃ）をスパッタリングして着膜ざせた。First, nickel (Ni) was deposited on an alumina cylindrical base from an alloy target using the DC magnetron sputtering method.
, chromium (Cr), aluminum (mountain), and scandium (Sc) were deposited by sputtering.
この時の各成分の比率は下記の表１に示す通りである。
ついで、着膜された基体を加熱炉に入れ、空気中で４０
０午０、１時間の加熱処理を行った。こうして得られた
着膜済基体の両端にリード線付キャップをかしめっけし
、試料とした。この試料の抵抗温度係数、比抵抗を各ｌ
ｑ固の平均値で調べた結果を下記の表２に示す。また、
表２には参考としてニッケル、クロームを用い、上記と
同一条件で作成した試料の特性値を併せて示している。
なお、抵抗温度係数は十２５℃、十７５００の２点間で
測定した。〔表１〕
〔表２〕
（注） 成分比はＮｉ−Ｃｒ（８０：２０）に対する添
加成分比を示す。The ratio of each component at this time is as shown in Table 1 below.
Next, the film-coated substrate was placed in a heating furnace and heated in air for 40 minutes.
Heat treatment was performed for 1 hour at 0:00. Caps with lead wires were caulked onto both ends of the film-coated substrate thus obtained, and used as a sample. The temperature coefficient of resistance and specific resistance of this sample are
The results of the investigation using the average value of q hardness are shown in Table 2 below. Also,
Table 2 also shows the characteristic values of samples prepared under the same conditions as above using nickel and chromium as a reference.
The temperature coefficient of resistance was measured between two points, 125°C and 17500°C. [Table 1] [Table 2] (Note) The component ratio indicates the ratio of added components to Ni-Cr (80:20).
上記の表のように本発明による実施例１〜４と参考例と
では、抵抗温度係数が著しく異なる。As shown in the table above, Examples 1 to 4 according to the present invention and the reference example have significantly different temperature coefficients of resistance.
また、従来より抵抗薄膜として使用されているＮｉ−Ｃ
ｒ−山の場合、ＡＩの比率を０．７〜６程度変えた時、
抵抗温度係数は２０〜３０脚′ｏＣ程度変動する。これ
に対して、ニッケル、クローム、アルミニウムおよびス
カンジウムよりなる抵抗薄膜は抵抗温度係数が小さく、
また一部の成分の比率が変わってもその抵抗温度係数の
値は安定しているため、製造時に比率の微妙な加減をし
ないで、比較的楽に所望の抵抗薄膜を得ることができる
。また、電流雑音は完成抵抗値２０血○で０．０４〃Ｖ
／Ｖ程度、第３高調波指数は同２０血○で１３の母屋度
と良い特性を示した。さらに、温度１２尊０で定格電力
（例１／４Ｗ）を１．虫篭間印加し、３０分切るという
ことを繰り返す負荷寿命試験を行ったところ、図に示す
ような結果を得た。それぞれ本発明品（Ｎｉ：Ｃｒ：Ａ
Ｉ：Ｓｃ＝８０：２０：３：０．３５）による特性ａ、
従来品（Ｎｉ：Ｃｒ：ＡＩ＝８０：２０：３）による特
性ｂ、同じく従来品（Ｎｉ：Ｃｒ＝８０：２０）による
特性ｃを比較したものである。図より２００ｑ時間の加
速試験を経て本発明の抵抗薄膜が長期使用状態において
も安定であり、寿命的にも効果のあることが鱗る。以上
のように本発明の抵抗薄膜は、各種の特性において良好
な値を示し、かつ安価にして安定的に製作することがで
き、その産業性は大なるものである。In addition, Ni-C, which has been conventionally used as a resistive thin film,
In the case of r-mountain, when changing the AI ratio by about 0.7 to 6,
The temperature coefficient of resistance varies by about 20-30°C. On the other hand, resistive thin films made of nickel, chromium, aluminum, and scandium have a small resistance temperature coefficient.
Furthermore, even if the ratio of some components changes, the value of the temperature coefficient of resistance remains stable, so a desired resistive thin film can be obtained relatively easily without delicately adjusting the ratio during manufacturing. In addition, the current noise is 0.04 V at a completed resistance value of 20
/V, the third harmonic index was 20 blood, and the main power was 13, showing good characteristics. Furthermore, the rated power (example 1/4W) is set to 1. When a load life test was conducted in which the load was applied repeatedly to the insect cage and then turned off for 30 minutes, the results shown in the figure were obtained. Each of the products of the present invention (Ni:Cr:A
I:Sc=80:20:3:0.35) characteristic a,
Characteristic b of a conventional product (Ni:Cr:AI=80:20:3) and characteristic c of a conventional product (Ni:Cr=80:20) are compared. From the figure, it can be seen that the resistive thin film of the present invention is stable even in long-term use after undergoing an accelerated test of 200 q hours, and is effective in terms of longevity. As described above, the resistive thin film of the present invention exhibits good values in various properties, can be manufactured stably at low cost, and has great industrial efficiency.
図は本発明品と従来品による負荷寿命試験結果を比較し
て示す図である。The figure is a diagram showing a comparison of the results of a load life test between a product of the present invention and a conventional product.
Claims (1)
ウムからなることを特徴とする抵抗薄膜。1. A resistive thin film characterized by being composed of nickel, chromium, aluminum and scandium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55080582A JPS6024563B2 (en) | 1980-06-13 | 1980-06-13 | resistive thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55080582A JPS6024563B2 (en) | 1980-06-13 | 1980-06-13 | resistive thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS575307A JPS575307A (en) | 1982-01-12 |
| JPS6024563B2 true JPS6024563B2 (en) | 1985-06-13 |
Family
ID=13722334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55080582A Expired JPS6024563B2 (en) | 1980-06-13 | 1980-06-13 | resistive thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6024563B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6235857U (en) * | 1985-08-20 | 1987-03-03 |
-
1980
- 1980-06-13 JP JP55080582A patent/JPS6024563B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6235857U (en) * | 1985-08-20 | 1987-03-03 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS575307A (en) | 1982-01-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4746896A (en) | Layered film resistor with high resistance and high stability | |
| US4298505A (en) | Resistor composition and method of manufacture thereof | |
| US4063211A (en) | Method for manufacturing stable metal thin film resistors comprising sputtered alloy of tantalum and silicon and product resulting therefrom | |
| JPH06158272A (en) | Resistance film and production thereof | |
| AU598970B2 (en) | High temperature sic thin film thermistor | |
| JPS6024563B2 (en) | resistive thin film | |
| JPS634321B2 (en) | ||
| JPS6024562B2 (en) | resistive thin film | |
| JPS6018123B2 (en) | resistive thin film | |
| JPS6024561B2 (en) | resistive film thin | |
| JPS6018122B2 (en) | resistive thin film | |
| JPS6016724B2 (en) | resistive thin film | |
| JPS6024564B2 (en) | resistive thin film | |
| JPS6018124B2 (en) | resistive thin film | |
| JPS62291101A (en) | Metal film resistor and manufacture of the same | |
| JPS63147305A (en) | Metal thin-film resistor | |
| JPS6395601A (en) | Resistance thin film | |
| JPH06275409A (en) | Method of manufacturing thin film resistance element | |
| JPS5822379A (en) | Target for sputtering | |
| JPH047561B2 (en) | ||
| JPS6395603A (en) | resistive thin film | |
| JPS63169705A (en) | Adjustment of resistance characteristics of thin film resistor | |
| JPS63229802A (en) | Manufacture of amorphous two-component alloy thin film resistor | |
| JPH045241B2 (en) | ||
| JPS634322B2 (en) |