JPS604123B2 - Method and apparatus for producing new hydrogen-containing silicon material - Google Patents
Method and apparatus for producing new hydrogen-containing silicon materialInfo
- Publication number
- JPS604123B2 JPS604123B2 JP12413081A JP12413081A JPS604123B2 JP S604123 B2 JPS604123 B2 JP S604123B2 JP 12413081 A JP12413081 A JP 12413081A JP 12413081 A JP12413081 A JP 12413081A JP S604123 B2 JPS604123 B2 JP S604123B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- hydrogen
- reaction chamber
- gas
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims description 22
- 229910052739 hydrogen Inorganic materials 0.000 title claims description 20
- 239000001257 hydrogen Substances 0.000 title claims description 19
- 239000002210 silicon-based material Substances 0.000 title claims description 11
- 238000000034 method Methods 0.000 title description 6
- 238000006243 chemical reaction Methods 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 21
- 239000002002 slurry Substances 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 239000011863 silicon-based powder Substances 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 229910008045 Si-Si Inorganic materials 0.000 claims description 3
- 229910006411 Si—Si Inorganic materials 0.000 claims description 3
- 239000010419 fine particle Substances 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000011856 silicon-based particle Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000003595 mist Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910004469 SiHx Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000003380 propellant Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Description
【発明の詳細な説明】
本発明は新規水素含有珪素物質の製造方法および装置に
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method and apparatus for producing a novel hydrogen-containing silicon material.
四配位Si格子とこれを取り巻くSi比または/および
Sj&の殻とからなりSi格子内に水素を含有している
新規水素含有珪素物質については侍厭昭56一7020
0号明細書(特開昭57一205312号公報参照)に
記載されている。Regarding a new hydrogen-containing silicon material that is composed of a four-coordinated Si lattice and a surrounding Si ratio or/and Sj & shell and contains hydrogen in the Si lattice, see Samurai Sho 56-7020.
It is described in the specification of No. 0 (see Japanese Unexamined Patent Publication No. 57-205312).
この水素含有珪素物資は原理的には水素雰囲気中に対向
して配置した珪素ターゲットと基板の間に電圧を印加し
てスパタリングを行うことにより基板上に生成させるこ
とができるが、通常このようなスパタリングは1個のス
パタリング室においてバッチ方式で行われるものであり
、工業的規模で大量に目的物を製造するのに適した方法
および装置はまだ開発されていない。本発明者等は前記
水素含有珪素物質を工業的規模で連続的に製造できる方
法および装置を得るべく種々研究した結果本発明を完成
した。従って本発明の目的は新規水素含有珪素物質を大
量生産することのできる方法および装置を提供すること
である。In principle, this hydrogen-containing silicon material can be generated on a substrate by sputtering by applying a voltage between a silicon target and the substrate placed facing each other in a hydrogen atmosphere. Sputtering is carried out in a single sputtering chamber in a batch manner, and a method and apparatus suitable for producing a target product in large quantities on an industrial scale have not yet been developed. The present inventors completed the present invention as a result of various studies aimed at obtaining a method and apparatus capable of continuously producing the hydrogen-containing silicon material on an industrial scale. It is therefore an object of the present invention to provide a method and apparatus capable of mass producing new hydrogen-containing silicon materials.
本発明による新規水素含有珪素物質の製造方法は粒径3
00メッシュ以下の珪素粉末を液状珪素含有化合物中に
分散したスラリーを、日2ガスまたはSiH4ガスによ
り微細化して水素プラズマ中に噴出させ、珪素粉末をプ
ラズマ化した日および日十と反応させてSiQおよびS
iH3微粒子を生成させると共にSi−Si網目中に水
素を導入することからなものである。The method for producing a new hydrogen-containing silicon material according to the present invention has a particle size of 3
A slurry in which silicon powder with a size of 0.00 mesh or less is dispersed in a liquid silicon-containing compound is made into fine particles using SiH2 gas or SiH4 gas, and then ejected into hydrogen plasma. and S
This is because iH3 fine particles are generated and hydrogen is introduced into the Si-Si network.
また本発明による装置は反応室、該反応室の一端中央に
設けられたプラズマトーチ、該プラズマトーチの周囲に
配置された複数個の珪素粉末スラリー項霧ノズル、該プ
ラズマトーチの前方に配置されたプラズマ収飲用円筒型
磁石および反応室の他端に設けられた冷却された生成物
補集壁よりなっている。以下に本発明による新規水素含
有珪素物質の製造方法および装置を第1図によって説明
する。The apparatus according to the present invention also includes a reaction chamber, a plasma torch provided at the center of one end of the reaction chamber, a plurality of silicon powder slurry mist nozzles arranged around the plasma torch, and a plurality of silicon powder slurry mist nozzles arranged in front of the plasma torch. It consists of a cylindrical magnet for plasma absorption and a cooled product collection wall provided at the other end of the reaction chamber. The method and apparatus for producing a novel hydrogen-containing silicon material according to the present invention will be explained below with reference to FIG.
先づステンレス鋼製の反応室1のSUS製バタフライ弁
2を開いて排気に接続し反応室を10‐6Ton程度の
真空にする。反応室は例えば油回転ポンプにより真空度
10‐3Tomにし、次に油、水銀などを用いた拡散ポ
ンプにより10‐6Tonの真空度にすることができる
。排気系には液体窒素トラップが設けられている。次に
アルゴンガスボンベ3および水素ガスボンベ4からそれ
ぞれレギュレーターおよび流量計により計量されたアル
ゴンガスおよび水素ガスをマンホールドを経由してAr
/弘=8/2〜2ノ8の量比範囲内で混合しプラズマガ
スを作り、プラズマトーチ5を介して一定流速で反応室
に供給する。このとき(電源)をプラズマトーチに接続
し(AMH2)プラズマを発生させると、水素ガスは日
2一がおよび日一日十十eに従って解離およびイオン化
し所望の反応が行われる。プラズマトーチ先端から反応
室内に形成されるプラズマを包囲して円筒型磁石6を設
けることによりプラズマの長さを〜10肌以上に大きく
することができる。なおプラズマトーチの反応室外の部
分は水で冷却して過熱防止するのが好ましい。反応室1
は例えば内座27仇奴、長さ50仇岬の大きさで内壁は
#40偽覆面研磨されている。また両フタは同様にステ
ンレス製で、何れも0リングでシールされている。一方
、300メッシュ全通の粒度を有する珪素粉末を珪素含
有液体、例えばSIC14中に分散させたスラリー(固
形分10〜4の重量%)をスラリータンク7から適量ポ
ンプPにより二重導管9の内管を経て/ズル10からプ
ラズマ中に噴射する。First, the SUS butterfly valve 2 of the stainless steel reaction chamber 1 is opened and connected to the exhaust to create a vacuum of about 10-6 tons in the reaction chamber. For example, the reaction chamber can be brought to a vacuum of 10-3 Tom using an oil rotary pump, and then brought to a vacuum of 10-6 Ton using a diffusion pump using oil, mercury, or the like. The exhaust system is equipped with a liquid nitrogen trap. Next, the argon gas and hydrogen gas measured by the regulator and flow meter from the argon gas cylinder 3 and the hydrogen gas cylinder 4 are passed through the manhold into the Ar gas cylinder.
/Hiroshi=8/2 to 2 to 8 to form a plasma gas, which is supplied to the reaction chamber at a constant flow rate via the plasma torch 5. At this time, when the (power source) is connected to the plasma torch (AMH2) and plasma is generated, hydrogen gas is dissociated and ionized according to the 21st and 10th e of the day, and the desired reaction takes place. By providing the cylindrical magnet 6 to surround the plasma formed in the reaction chamber from the tip of the plasma torch, the length of the plasma can be increased to 10 skins or more. Note that it is preferable to cool the portion of the plasma torch outside the reaction chamber with water to prevent overheating. Reaction chamber 1
For example, the inner wall is 27 meters long, 50 meters long, and the inner wall is polished to a #40 false surface. Both lids are similarly made of stainless steel, and both are sealed with O-rings. On the other hand, an appropriate amount of slurry (solid content 10 to 4% by weight) in which silicon powder having a particle size of 300 mesh is dispersed in a silicon-containing liquid such as SIC14 is pumped into the double conduit 9 from the slurry tank 7. It is injected into the plasma via the tube/from the nozzle 10.
この噴射は比ガスまたは/およびSiH4ガス等のボン
ベ8からこれらのガスを1〜3k9/塊Gの圧力で二重
導管9の外管を通ってノズルに供孫舎することにより行
われ、スラリーは微細化されてプラズマ中に供給される
。プラズマは非常に限定された区域にしか存在しないの
で、珪素粉末とプラズマ化した水素との反応を良好な効
率で実施するためには第2図および第3図に示すような
ノズルを使用する。第2図Aはノズルの配置を示す側面
図であり、第2図Bはその正面図であり、これらの図か
ら明らかなように、6個のノズルがプラズマトーチを取
り囲むように配置されている。そして各ノズルから噴射
される&ガスまたはノおよびSiH4ガスはプラズマの
中心部の一点Cに集中するようにノズル口が勾配を以つ
て配置されている。また珪素粉末スラリーの液滴蓬をで
きるだけ小さくするために、好ましくはェアロゾルの形
にするために、ノズルは第3図のような二重構造になっ
ていて、スラリー導管101を取り巻く外管102を日
2ガスまたはSiH4ガスが通過してノズル口で珪素ス
ラリーを微細化するようになっているので輸送中のスラ
リーの粘度変化や煤質液体SIC14の蒸発などを防止
することができる。スラリーはノズル出口の液流回転板
103によって大きな回転速度が与えられるのでスラリ
ーのみでも微粒化が行われるが、二重導管9の外管を通
る日2ガスまたはSiH4ガスは途中内管のスラリーの
断熱を行った後ノズル口で例えば縦方向に約2び、横方
向に約60oの額斜角を以つて旋回され音速に近い速度
で反応室内に噴出してスラリーを微細化する。こうして
得られたェアロゾル状頃務はプラズマ中で瞬間的に乾燥
し珪素粒子表面が融解するので、珪素粒子表面で液一気
反応が行われ珪素粒子表面にSiH、SiH2、SiH
3等(SiHxと総称する)が生成する。またプラズマ
を通過する間に珪素粒子の融解は次第に表面から内部に
進行し、珪素原子の結合格子構造は液体状態になり珪素
原子間の結合は相当に弛んだ状態になる。従ってプラズ
マ化された日および日十が融解珪素の中に進入してその
網目構造内に捕獲される。こうして水素を捕獲した生成
物は円筒型磁石を通過すると捕集壁11に衝突して急冷
される。捕集壁は融解した珪素を急冷して−Si−Si
−網目構造の弛んだ状態のまま補集するために冷凍機1
3からフレオンガスをノズル12から総集壁に吹付ける
ことにより−30こ0以下に冷却されている。反応中の
反応室内の圧力は1〜50Tomになるようにバタフラ
イ弁2で調節する。所定の反応時間の後、反応室内に充
分な量の生成物が蓄積したとき1こスラリーおよび噴射
ガスの供給を中止し、次にプラズマを消滅させ、反応室
内に窒素ガスを導入して大気圧にした後、反応室を開い
て生成物を回収する。This injection is carried out by injecting a specific gas or/and SiH4 gas etc. from a cylinder 8 into a nozzle through the outer tube of the double conduit 9 at a pressure of 1 to 3 k9/mass G, and the slurry is is miniaturized and supplied into the plasma. Since plasma exists only in a very limited area, a nozzle as shown in FIGS. 2 and 3 is used to carry out the reaction between silicon powder and plasma hydrogen with good efficiency. Figure 2A is a side view showing the arrangement of the nozzles, and Figure 2B is a front view thereof.As is clear from these figures, six nozzles are arranged so as to surround the plasma torch. . The nozzle ports are arranged with a slope so that the & gas or the SiH4 gas injected from each nozzle is concentrated at one point C in the center of the plasma. In addition, in order to make the droplets of silicon powder slurry as small as possible, preferably in the form of an aerosol, the nozzle has a double structure as shown in FIG. Since the silicon slurry is atomized at the nozzle port through which the SiH2 gas or SiH4 gas passes, changes in the viscosity of the slurry and evaporation of the sooty liquid SIC14 during transportation can be prevented. The slurry is given a large rotational speed by the liquid flow rotary plate 103 at the nozzle outlet, so the slurry alone can be atomized, but the gas or SiH4 gas passing through the outer pipe of the double conduit 9 is used to reduce the slurry in the inner pipe on the way. After heat insulation, the slurry is rotated at the nozzle opening at an oblique angle of, for example, about 2 in the vertical direction and about 60 degrees in the horizontal direction, and is ejected into the reaction chamber at a speed close to the speed of sound to atomize the slurry. The aerosol-like liquid thus obtained dries instantaneously in the plasma and the surface of the silicon particle melts, so a liquid reaction takes place on the surface of the silicon particle and the surface of the silicon particle becomes SiH, SiH2, SiH
No. 3 (generally referred to as SiHx) is generated. Further, while passing through the plasma, the melting of the silicon particles gradually progresses from the surface to the inside, and the bond lattice structure of the silicon atoms becomes a liquid state, and the bonds between the silicon atoms become considerably relaxed. The plasma-formed particles thus enter the molten silicon and become trapped within its network structure. When the hydrogen-captured product passes through the cylindrical magnet, it collides with the collection wall 11 and is rapidly cooled. The collection wall rapidly cools the molten silicon to form -Si-Si
- Freezer 1 to collect the loose mesh structure
3, Freon gas is sprayed from the nozzle 12 onto the collecting wall to cool it to below -30°C. The pressure inside the reaction chamber during the reaction is adjusted by the butterfly valve 2 to 1 to 50 Tom. After a predetermined reaction time, when a sufficient amount of products has accumulated in the reaction chamber, the supply of slurry and propellant gas is stopped, then the plasma is extinguished, and nitrogen gas is introduced into the reaction chamber to reduce atmospheric pressure. After that, open the reaction chamber and collect the product.
本発明による製造方法の実施例を以下に説明する。Examples of the manufacturing method according to the present invention will be described below.
実施例
アルゴン対水素の混合比が1:1のプラズマガスを3そ
/分の流量でプラズマトーチに供給する。EXAMPLE A plasma gas having a mixing ratio of argon to hydrogen of 1:1 is supplied to a plasma torch at a flow rate of 3 mm/min.
このときのプラズマ発生用電力は舷W(DC)である。The power for plasma generation at this time is the ship's armw (DC).
一方、水素対SiH4の混合比が7:3の混合ガスを二
重導管9の外管に1.5k9/あの圧力で供給し、珪素
粉末(#300)対SIC14の比が1:1のスラリー
(固形分50%)を二重管9の内管に0.12Zノ分の
流量で供給しL ノズル10からプラズマに向って噴射
合流させる。プラズマ内では反応室の円筒型磁石を通過
する間に(Si−H)反応が行われSi−Hx粉を得た
。この粉末生成物の水素含有量はガスクロマトグラフイ
−により測定したところ65原子%であった。On the other hand, a mixed gas with a mixture ratio of hydrogen to SiH4 of 7:3 is supplied to the outer pipe of the double conduit 9 at a pressure of 1.5 k9/ that, and a slurry with a ratio of silicon powder (#300) to SIC14 of 1:1 is produced. (solid content 50%) is supplied to the inner tube of the double tube 9 at a flow rate of 0.12Z, and is injected from the L nozzle 10 toward the plasma to merge. In the plasma, a (Si-H) reaction was carried out while passing through a cylindrical magnet in a reaction chamber to obtain Si-Hx powder. The hydrogen content of this powder product was determined by gas chromatography to be 65 atom %.
第1図は本発明の製造装置を説明するための図であり、
第2図AおよびBはスプレーノズルの配層を示す側面図
および正面図であり、第3図はノズルの断面図である。
図中符号:1・…・・反応室、2・…・・バタフライ弁
、3・・・・・・アルゴンガスボンベ、4・・・・・・
水素ガスボンベ、5・・・・・・プラズマトーチ、6・
・・・・・円筒型磁石、7……スラリータンク、8……
ボンベ、9…・・・二重導管、10,12・・・・・・
ノズル、11・・・・・・補集壁、13……冷凍機、1
01……スラリー導管、102・・・・・・外管、10
3・・・・・・液流回転板。第1図第2図
第3図FIG. 1 is a diagram for explaining the manufacturing apparatus of the present invention,
2A and 2B are a side view and a front view showing the layer arrangement of the spray nozzle, and FIG. 3 is a sectional view of the nozzle. Codes in the figure: 1...Reaction chamber, 2...Butterfly valve, 3...Argon gas cylinder, 4...
Hydrogen gas cylinder, 5...Plasma torch, 6.
...Cylindrical magnet, 7...Slurry tank, 8...
Cylinder, 9...Double conduit, 10, 12...
Nozzle, 11... Collection wall, 13... Freezer, 1
01... Slurry conduit, 102... Outer tube, 10
3...Liquid flow rotating plate. Figure 1 Figure 2 Figure 3
Claims (1)
化合物中に分散したスラリーを、H_2ガスまたはSi
H_4ガスにより微細化して水素プラズマ中に噴出させ
、珪素粉末をプラズマ化したHおよびH^+と反応させ
てSiH_2およびSiH_3微粒子を生成させると共
にSi−Si網目中に水素を導入することを特徴とする
新規水素含有珪素物質の製造方法。 2 反応室、該反応室の一端中央に設けられたプラズマ
トーチ、該プラズマトーチの周囲に配置された複数個の
珪素粉末スラリー噴霧ノズル、該プラズマトーチの前方
に配置されたプラズマ収斂用円筒型磁石および反応室の
他端に設けられた冷却された生成物補集壁からなること
を特徴とする新規水素含有珪素物質の製造装置。[Claims] 1. A slurry in which silicon powder with a particle size of 300 mesh or less is dispersed in a liquid silicon-containing compound is heated with H_2 gas or Si
The silicon powder is made fine by H_4 gas and ejected into hydrogen plasma, and the silicon powder is reacted with the plasma-formed H and H^+ to generate SiH_2 and SiH_3 fine particles while introducing hydrogen into the Si-Si network. A method for producing a new hydrogen-containing silicon material. 2. A reaction chamber, a plasma torch provided at the center of one end of the reaction chamber, a plurality of silicon powder slurry spray nozzles arranged around the plasma torch, and a cylindrical magnet for plasma convergence arranged in front of the plasma torch. and a cooled product collection wall provided at the other end of the reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12413081A JPS604123B2 (en) | 1981-08-10 | 1981-08-10 | Method and apparatus for producing new hydrogen-containing silicon material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12413081A JPS604123B2 (en) | 1981-08-10 | 1981-08-10 | Method and apparatus for producing new hydrogen-containing silicon material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5826020A JPS5826020A (en) | 1983-02-16 |
| JPS604123B2 true JPS604123B2 (en) | 1985-02-01 |
Family
ID=14877656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12413081A Expired JPS604123B2 (en) | 1981-08-10 | 1981-08-10 | Method and apparatus for producing new hydrogen-containing silicon material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS604123B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104321145B (en) | 2012-04-23 | 2016-10-12 | 三菱电机株式会社 | Corona discharge assembly and air conditioner |
-
1981
- 1981-08-10 JP JP12413081A patent/JPS604123B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5826020A (en) | 1983-02-16 |
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| JPS6168311A (en) | Process and apparatus for preparing aluminum nitride powder | |
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| US6089548A (en) | Process and device for converting a liquid stream flow into a gas stream flow | |
| JPH03242257A (en) | Atomization device | |
| JP2002502465A (en) | Method and apparatus for steam generation and film deposition | |
| JPS6251902B2 (en) | ||
| JPS5781856A (en) | Coating device for flux | |
| JP3400810B2 (en) | Snow-like dry ice manufacturing equipment | |
| JPS645921B2 (en) | ||
| EP0213056A3 (en) | Method and apparatus for producing a stream of heated vapor particularly useful for therapeutic purposes | |
| JPS5687450A (en) | Spray gun with water injection structure | |
| JPS571459A (en) | Atomizer | |
| JPS56155640A (en) | Plasma spray process for obtaining metal compound material | |
| SU1212608A1 (en) | Apparatus for generating aerosol | |
| RU2034915C1 (en) | Device for obtaining the water-alcoholic mixture | |
| SU1618777A1 (en) | Coating apparatus | |
| SU569330A1 (en) | Device for applying coatings from powder materials with the aid of flame and gas | |
| SU629990A1 (en) | Apparatus for obtaining metallic powders | |
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