JPS605232B2 - Manufacturing method of Josephson device - Google Patents
Manufacturing method of Josephson deviceInfo
- Publication number
- JPS605232B2 JPS605232B2 JP55156871A JP15687180A JPS605232B2 JP S605232 B2 JPS605232 B2 JP S605232B2 JP 55156871 A JP55156871 A JP 55156871A JP 15687180 A JP15687180 A JP 15687180A JP S605232 B2 JPS605232 B2 JP S605232B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- microbridge
- niobium
- view
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Description
【発明の詳細な説明】
この発明は、安定化されたニオブ薄膜、ブリッジ部を有
する、いわゆるバリアブル・シックネス型のジョセフソ
ン素子の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a so-called variable thickness type Josephson device having a stabilized niobium thin film and a bridge portion.
従来のバリアブル・シックネス型のジョセフソン素子は
、第１図ａ，ｂにその平面図、およびＡ−Ａ′線による
断面図を示すごとく、マイクロフリッジ部１１と電極部
１２を形成した後、エッチング等によりマイクロブリッ
ジ部１１のニオブ膜を薄くして、ジョセフソン素子を形
成していた。In the conventional variable thickness type Josephson element, as shown in a plan view and a cross-sectional view taken along line A-A' in FIGS. The niobium film of the microbridge portion 11 was made thinner by methods such as the above, and a Josephson element was formed.
ジョセフソン素子のマイクロブリッジ部１１を通過する
電流を小さくするために、マイクロブリッジ部１１は電
極部分より電流が流れる断面積はできるだけ小さい方が
よい。断面積を小さくする方法は、パターン（平面）の
寸法を小さくする方法と縦方向のいわゆる膜厚を薄くす
る方法があるが「パターンを小さくするのに限度（〜ｌ
Ａｍ）があるため、膜厚を薄くする方法がよいが、マィ
クロブリッジ部１１は薄く、他の電極部１２の部分は厚
くする必要があるため、一般に厚い膜で全体を形成し、
その後、マイクロブリッジ部１１のみエッチング等で薄
くしている。蒸着膜は一般にグレインよりでき上がって
いるため表面よりエッチングした場合、均一な膜厚の薄
膜は得難く、かつマイクロブリッジ部１１のみ保護膜で
おおうことは難しい。In order to reduce the current passing through the microbridge section 11 of the Josephson element, the cross-sectional area of the microbridge section 11 through which current flows should be as small as possible compared to the electrode section. There are two ways to reduce the cross-sectional area, one is to reduce the dimension of the pattern (plane) and the other is to reduce the film thickness in the vertical direction.
Am), it is better to make the film thinner, but the microbridge part 11 needs to be thinner and the other electrode parts 12 need to be thicker, so generally the whole is formed with a thicker film.
Thereafter, only the microbridge portion 11 is thinned by etching or the like. Since a deposited film is generally made up of grains, if it is etched from the surface, it is difficult to obtain a thin film with a uniform thickness, and it is also difficult to cover only the microbridge portion 11 with a protective film.
そして、従来の製造方法では、マイクロブリッジ部１１
のみ膜厚を薄くすることは困難である。In the conventional manufacturing method, the micro bridge portion 11
However, it is difficult to reduce the film thickness.
さらに、その部分のみ保護膜でおおうことはより困難で
ある。この発明は、上述の点にかんがみなされたもので
、マイク。Furthermore, it is more difficult to cover only that portion with a protective film. This invention was made in view of the above-mentioned points.
ブリッジ部のみ保護膜でおおわれた薄膜より形成され、
電極部分は厚膜で形成されたジョセフソン素子を製造す
ることを目的とする。以下、この発明について説明する
。この発明の一実施例を第２図〜第４図について説明す
る。Only the bridge part is formed from a thin film covered with a protective film,
The purpose is to manufacture a Josephson device in which the electrode portion is formed of a thick film. This invention will be explained below. An embodiment of the present invention will be described with reference to FIGS. 2 to 4.
第２図において、第２図ａは断面図、第２図ｂは平面図
である。基板２上に、ニオブ薄膜１０と金属酸化膜３、
たとえばニオブの酸化膜よりなる幅約１仏肌で長いパタ
ーン（マイクロブリッジ部）を形成する。パターン形成
は従来のレジストと露光、エッチングにより形成する。
この時のニオブ薄膜１０は５０Ａと非常に薄い膜を形成
する。続いて第３図のようにマイクロブリッジ部の保護
膜である金属酸化膜３の一部３１を残して他は除去する
。続いて第４図ａ，ｂの断面図と平面図に示すように、
厚いニオブ膜により電極部１２を形成する。電極部１２
の膜厚は２０００Ａ、電極パタ−ン形成時はマイクロブ
リッジ部１１上の金属酸化膜３１がレジストとなり、マ
イクロブリッジ部１１のニオブ薄膜１川まエッチングさ
れない。上述したこの発明の方法によれば、５０Ａのニ
オブ薄膜のマイクロブリッジ部１１が容易に形成され、
しかも金属酸化膜３１でおおわれており、しかも素子の
電極部１２は厚いニオブ膜（２０００Ａ）で形成するこ
とができる。In FIG. 2, FIG. 2a is a sectional view, and FIG. 2b is a plan view. On the substrate 2, a niobium thin film 10 and a metal oxide film 3,
For example, a long pattern (microbridge portion) made of a niobium oxide film and having a width of approximately 1 inch is formed. The pattern is formed using conventional resist, exposure, and etching.
The niobium thin film 10 at this time forms a very thin film of 50A. Subsequently, as shown in FIG. 3, a portion 31 of the metal oxide film 3 serving as a protective film for the microbridge portion is left and the rest is removed. Subsequently, as shown in the cross-sectional view and plan view of FIGS. 4a and 4b,
The electrode portion 12 is formed of a thick niobium film. Electrode part 12
The film thickness is 2000 Å, and when forming the electrode pattern, the metal oxide film 31 on the microbridge portion 11 serves as a resist, and only one portion of the niobium thin film on the microbridge portion 11 is not etched. According to the method of the present invention described above, the microbridge portion 11 of a 50A niobium thin film is easily formed.
Moreover, it is covered with a metal oxide film 31, and the electrode portion 12 of the element can be formed of a thick niobium film (2000A).
なお、この発明は、膜厚の異なる複数の部分よりなる膜
で形成されるすべてのパターン形成に応用することが可
能である。Note that the present invention can be applied to all pattern formations formed with a film consisting of a plurality of parts having different film thicknesses.
また、金属酸化膜３はＳｊのＳｉ０２あるいはＳｉ３Ｎ
４でもよい。以上詳細に説明したように、この発明によ
れば非常に薄い膜よりなるジョセフソン素子のマイクロ
ブリッジ部を形成することができ、しかもそのマイクロ
ブリッジは保護膜でおおわれているのできわめて安定で
ある等の優れた利点を有する。Moreover, the metal oxide film 3 is Si02 or Si3N of Sj.
4 is fine. As explained in detail above, according to the present invention, it is possible to form a microbridge portion of a Josephson element made of a very thin film, and since the microbridge is covered with a protective film, it is extremely stable. It has excellent advantages.
第１図ａ，ｂは従来のジョセフソン素子のマイクロブリ
ッジ部を示す平面図と断面図、第２図〜第４図はこの発
明の一実施例の製造工程を示すもので、第２図ａ，ｂは
断面図および平面図、第３図は断面図、第４図ａ，ｂは
断面図および平面図である。
図中、２は基板、３は金属酸化膜、１川まニオブ薄膜、
１１はマイクロブリッジ部、１２は電極部、３１はマイ
クロブリッジ部を保護する金属酸化膜である。
なお、図中の同一符号は同一または相当部分を示す。第
１図
第２図
第３図
第４図Figures 1a and 1b are a plan view and a sectional view showing the microbridge portion of a conventional Josephson element, and Figures 2 to 4 show the manufacturing process of an embodiment of the present invention. , b are a sectional view and a plan view, FIG. 3 is a sectional view, and FIGS. 4a and 4b are a sectional view and a plan view. In the figure, 2 is a substrate, 3 is a metal oxide film, 1 is a niobium thin film,
Reference numeral 11 denotes a microbridge portion, 12 an electrode portion, and 31 a metal oxide film that protects the microbridge portion. Note that the same reference numerals in the figures indicate the same or corresponding parts. Figure 1 Figure 2 Figure 3 Figure 4
Claims (1)
し中央を金属酸化膜でおおい、前記ニオブ薄膜の露出し
た両端に電気的に接続した前記ニオブ薄膜より厚く、か
つ大面積を有するニオブ膜よりなる電極部を形成するこ
とを特徴とするジヨセフソン素子の製造方法。1. A thin niobium film formed on a substrate with both ends exposed and the center covered with a metal oxide film, which is thicker than the niobium thin film and has a larger area and is electrically connected to both exposed ends of the niobium thin film. 1. A method for manufacturing a Josephson device, characterized by forming an electrode portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55156871A JPS605232B2 (en) | 1980-11-06 | 1980-11-06 | Manufacturing method of Josephson device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55156871A JPS605232B2 (en) | 1980-11-06 | 1980-11-06 | Manufacturing method of Josephson device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5780786A JPS5780786A (en) | 1982-05-20 |
| JPS605232B2 true JPS605232B2 (en) | 1985-02-08 |
Family
ID=15637206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55156871A Expired JPS605232B2 (en) | 1980-11-06 | 1980-11-06 | Manufacturing method of Josephson device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS605232B2 (en) |
-
1980
- 1980-11-06 JP JP55156871A patent/JPS605232B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5780786A (en) | 1982-05-20 |
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