JPS6114652B2 - - Google Patents
Info
- Publication number
- JPS6114652B2 JPS6114652B2 JP54166183A JP16618379A JPS6114652B2 JP S6114652 B2 JPS6114652 B2 JP S6114652B2 JP 54166183 A JP54166183 A JP 54166183A JP 16618379 A JP16618379 A JP 16618379A JP S6114652 B2 JPS6114652 B2 JP S6114652B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- ions
- electric field
- substrate
- glow discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
本発明は、グロー放電によりプラズマ状態を発
生させて、例えば太陽電池に用いる非晶質シリコ
ン膜を生成する気相成長装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a vapor phase growth apparatus for generating an amorphous silicon film for use in solar cells, for example, by generating a plasma state by glow discharge.
非晶質シリコンは、太陽電池の材料としてすぐ
れた光学的、電気的性質を持ち、可視光領域での
光吸収係数は結晶シリコンのそれよりもはるかに
大きい。このような非晶質シリコンは、モノシラ
ン（SiH4）をグロー放電によりプラズマ状態に
し、分解したシリコン原子のイオンを基板上に成
長させることにより、大面積のものをきわめて経
済的に得ることができる。グロー放電を発生させ
るには、反応容器内の対向電極間に直流電圧また
は高周波電圧を印加するか、反応容器外に設けた
コイルに高周波電流を流す。 Amorphous silicon has excellent optical and electrical properties as a material for solar cells, and its light absorption coefficient in the visible light region is much larger than that of crystalline silicon. Such amorphous silicon can be obtained extremely economically in large areas by converting monosilane (SiH 4 ) into a plasma state through glow discharge and growing ions of decomposed silicon atoms on a substrate. . To generate a glow discharge, a DC voltage or a high frequency voltage is applied between opposing electrodes inside the reaction vessel, or a high frequency current is passed through a coil provided outside the reaction vessel.
本発明は、このようなグロー放電によりプラズ
マ状態を発生させ、イオンを電界により加速して
基板上に成長させて得る気相成長膜の膜質の均一
性などの特性をさらに向上することを目的とす
る。 The present invention aims to further improve the characteristics such as the uniformity of the film quality of a vapor-phase grown film obtained by generating a plasma state by such a glow discharge and accelerating ions by an electric field to grow them on a substrate. do.
この目的は、格子電極を中間として二つの電極
を対向配置し、一方の電極と格子電極の間にはグ
ロー放電を起す電圧を印加し、格子電極と他方の
電極との間には他方の電極を負側としてイオンを
加速する電界を形成する直流電圧を印加し、基板
を他方の電極上またはその近傍に置くとともに、
イオン加速電界に垂直な磁場を加えることによつ
て達成される。 The purpose of this is to arrange two electrodes facing each other with a grid electrode in the middle, apply a voltage that causes glow discharge between one electrode and the grid electrode, and apply a voltage between the grid electrode and the other electrode to the other electrode. Applying a DC voltage that forms an electric field that accelerates ions with the electrode on the negative side, placing the substrate on or near the other electrode, and
This is achieved by applying a magnetic field perpendicular to the ion accelerating electric field.
本発明は、プラズマ状態においてはイオンは必
ずしも均一ではなく、異なる原子価のイオンが含
まれており、これらが混合して基板上に堆積する
場合は均一な膜質が得られず、膜の特性もよくな
いので、すぐれた膜質を得るのには堆積イオンの
性質を均一にする必要があるとの認識に基づく。 In the present invention, ions are not necessarily uniform in a plasma state, but contain ions of different valences, and if these are mixed and deposited on a substrate, a uniform film quality cannot be obtained and the film properties may deteriorate. This is based on the recognition that it is necessary to make the properties of the deposited ions uniform in order to obtain excellent film quality.
以下図を用いて本発明の実施例について説明す
る。図において１は容器を示し、排気口２より真
空ポンプにより排気するとともに、ガス導入口３
よりSiH4ガスを導入することで、10トル以下、
例えば１〜５トルの真空にされている。真空容器
内１には、電極４，５ならびに中間の格子電極６
が配置されている。この内、電極４と格子電極６
はプラズマ発生電極として使用され、例えば電極
４には＋500Vの電圧が印加され、電極６は大地
電位とされて、両電極間にはグロー放電が生じて
いる。電極５には、−100Vの電圧が印加されてお
り、グロー放電によりSiH4が分解してできたシ
リコンイオンを電極５，６間に形成された電界に
より、電極５に向つて加速する。電極６は、グロ
ー放電域よりイオン加速域へのイオンの流入を可
能とするため網目状にしてある。 Embodiments of the present invention will be described below with reference to the drawings. In the figure, 1 indicates a container, which is evacuated by a vacuum pump from an exhaust port 2, and a gas inlet 3.
By introducing more SiH 4 gas, less than 10 Torr,
For example, a vacuum of 1 to 5 torr is applied. Inside the vacuum vessel 1 are electrodes 4, 5 and an intermediate grid electrode 6.
is located. Among these, electrode 4 and grid electrode 6
is used as a plasma generating electrode, for example, a voltage of +500V is applied to electrode 4, electrode 6 is set at ground potential, and a glow discharge is generated between both electrodes. A voltage of -100V is applied to the electrode 5, and silicon ions produced by decomposing SiH 4 due to glow discharge are accelerated toward the electrode 5 by an electric field formed between the electrodes 5 and 6. The electrode 6 has a mesh shape to allow ions to flow into the ion acceleration region from the glow discharge region.
さらに、イオン加速域を両側から挾むようにし
て、電極５，６間の電界に対して垂直な磁場を形
成する電磁石７，７が配置されている。図示して
ないが、非晶質シリコン膜を成長させるべき基板
は、電極６の上もしくはその近傍におかれる。 Further, electromagnets 7 and 7 are arranged to sandwich the ion acceleration region from both sides and form a magnetic field perpendicular to the electric field between the electrodes 5 and 6. Although not shown, a substrate on which an amorphous silicon film is to be grown is placed on or near the electrode 6.
本発明の装置において、電極５，６間の電界が
イオンを基板に向つて加速する働きをするのに対
し、磁石７，７による磁界は、基板に向うイオン
を側方に向けて曲げる働きをする。充分な運動エ
ネルギを得たイオンは、磁界の作用にも係らず基
板上に到達するが、運動エネルギの小さなイオン
は磁界により側方に排除されることとなる。つま
り、ある程度以上の運動エネルギを得た、従つて
同様の性質を持つイオンのみが基板上に堆積する
こととなるので、堆積するイオンの性質が限定さ
れて膜質の特性が制御でき、膜質の均一性が向上
する。磁場に、電磁石によらないで永久磁石で形
成してもよいことは当然である。同様の効果は、
電極４と格子電極６との間に高周波電圧を印加
し、グロー放電を起してシリコン原子をイオン化
する場合にも得ることができる。なお、電極５と
格子電極６の間にグロー放電を起させ、格子電極
６と電極４の間に加速電界を形成するとともにそ
れに垂直な磁場を形成し、上側電極４の下側に置
いた基板上に成長させるようにしてもよく、この
場合には上部の電極に付着した粒子の落下により
膜の質が損なわれるのを防ぐことができる。 In the device of the present invention, the electric field between the electrodes 5 and 6 acts to accelerate the ions toward the substrate, whereas the magnetic field by the magnets 7 and 7 acts to bend the ions toward the substrate laterally. do. Ions that have acquired sufficient kinetic energy reach the substrate despite the effect of the magnetic field, but ions that have low kinetic energy are laterally expelled by the magnetic field. In other words, only ions that have obtained a certain amount of kinetic energy and therefore have similar properties will be deposited on the substrate, so the properties of the deposited ions are limited, the film quality can be controlled, and the film quality is uniform. Improves sex. It goes without saying that the magnetic field may be formed by a permanent magnet instead of an electromagnet. A similar effect is
It can also be obtained when a high frequency voltage is applied between the electrode 4 and the grid electrode 6 to cause glow discharge and ionize silicon atoms. Incidentally, a glow discharge is caused between the electrode 5 and the grid electrode 6, an accelerating electric field is formed between the grid electrode 6 and the electrode 4, and a magnetic field perpendicular to the field is formed. The particles may be grown upward, and in this case, it is possible to prevent the quality of the film from being degraded due to particles adhering to the upper electrode falling.
上述のように、本発明に基づく気相成長装置
は、プラズマ発生のための電界とイオン加速のた
めの電界とを分離し、さらに磁場により基板上に
堆積するイオンの性質を限定することによつて、
気相成長膜の膜質を向上させるものであり、太陽
電池に用いる非晶質シリコン膜の成長ばかりでな
く、プラズマ状態のガスよりの気相成長装置全般
に適用することができる。 As mentioned above, the vapor phase growth apparatus based on the present invention separates the electric field for plasma generation and the electric field for ion acceleration, and furthermore, by limiting the properties of the ions deposited on the substrate by the magnetic field. Then,
It improves the film quality of vapor-phase grown films, and can be applied not only to the growth of amorphous silicon films used in solar cells, but also to general vapor-phase growth apparatus using gas in a plasma state.
図は本発明の一実施例の構造を概略的に示す断
面図である。
１：真空容器、３：ガス導入口、４，５：電
極、６：格子電極、７：磁極コイル。
The figure is a sectional view schematically showing the structure of an embodiment of the present invention. 1: Vacuum vessel, 3: Gas inlet, 4, 5: Electrode, 6: Grid electrode, 7: Magnetic pole coil.
Claims (1)
電によりプラズマ状態を発生させ、イオンを電界
により加速して基板上に成長させるものにおい
て、格子電極を中間にして二つの電極を対向配置
し、該電極の一方と格子電極の間にはグロー放電
を起す電圧を印加し、格子電極と前記電極の他方
との間には、該他方の電極を負側としてイオンを
加速する電界を形成する直流電圧を印加し、基板
を他方の電極上または近傍に置くとともに、前記
イオン加速電界に垂直な磁場を加えたことを特徴
とする気相成長装置。1 A plasma state is generated by glow discharge in a vacuum container into which a compound gas is introduced, and ions are accelerated by an electric field to grow on a substrate, in which two electrodes are arranged facing each other with a grid electrode in the middle, and the electrode A voltage that causes a glow discharge is applied between one of the grid electrodes and the grid electrode, and a DC voltage that forms an electric field that accelerates ions is applied between the grid electrode and the other electrode with the other electrode on the negative side. A vapor phase growth apparatus characterized in that a substrate is placed on or near the other electrode, and a magnetic field perpendicular to the ion accelerating electric field is applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16618379A JPS5688315A (en) | 1979-12-20 | 1979-12-20 | Apparatus for gaseous phase growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16618379A JPS5688315A (en) | 1979-12-20 | 1979-12-20 | Apparatus for gaseous phase growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5688315A JPS5688315A (en) | 1981-07-17 |
| JPS6114652B2 true JPS6114652B2 (en) | 1986-04-19 |
Family
ID=15826604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16618379A Granted JPS5688315A (en) | 1979-12-20 | 1979-12-20 | Apparatus for gaseous phase growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5688315A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6364645U (en) * | 1986-10-15 | 1988-04-28 | ||
| JPS6388962U (en) * | 1986-11-27 | 1988-06-09 |
-
1979
- 1979-12-20 JP JP16618379A patent/JPS5688315A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6364645U (en) * | 1986-10-15 | 1988-04-28 | ||
| JPS6388962U (en) * | 1986-11-27 | 1988-06-09 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5688315A (en) | 1981-07-17 |
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