JPS6140126B2 - - Google Patents
Info
- Publication number
- JPS6140126B2 JPS6140126B2 JP1970578A JP1970578A JPS6140126B2 JP S6140126 B2 JPS6140126 B2 JP S6140126B2 JP 1970578 A JP1970578 A JP 1970578A JP 1970578 A JP1970578 A JP 1970578A JP S6140126 B2 JPS6140126 B2 JP S6140126B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- semiconductor substrate
- impurities
- solid phase
- ultrasonic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 239000007790 solid phase Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 description 10
- 238000007796 conventional method Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
この発明は半導体装置の製造方法にかかり、特
に半導体基体に施される不純物拡散方法を改良す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device, and particularly to improving a method for diffusing impurities into a semiconductor substrate.
半導体装置の製造において半導体基体に不純物
拡散を施す工程は不可欠である。そして深い拡散
領域、素子間の分離領域形成の如き深い拡散層を
得るには高温かつ長時間の、一例として1200℃に
て４〜５時間にわたる加熱工程を必要とする。 BACKGROUND ART In the manufacture of semiconductor devices, a step of diffusing impurities into a semiconductor substrate is essential. In order to obtain a deep diffusion layer such as a deep diffusion region or a deep diffusion layer for forming an isolation region between elements, a heating process is required at high temperature and for a long time, for example, at 1200° C. for 4 to 5 hours.
上記高温かつ長時間の加熱によると、
(1) ウエハに反（そ）り、結晶のスリツプ、格子
欠陥（Defect）等を生じ、素子特性の劣化、製
造歩留の低下等を招来する。 The above-mentioned heating at high temperature and over a long period of time (1) warps the wafer, causes crystal slips, lattice defects, etc., resulting in deterioration of device characteristics and reduction in manufacturing yield.
(2) 拡散用装置の損耗、たとえば耐熱管の変型な
らびに耐用期間の短化を招来する。(2) This leads to wear and tear on the diffusion device, such as deformation of heat-resistant tubes and shortening of their service life.
などの問題点がある。There are other problems.
この発明は上記従来の問題点に対し、これを改
良する半導体装置の製造方法を提供するもので、
不純物の気相−固相拡散、または基体に被着され
た不純物を含む気相成長層からこの基体に施され
る該不純物の固相−固相拡散のいづれにおいても
不純物の拡散を超音波照射のもとで行なうことに
より所望の拡散を行うための所要時間を短縮させ
ることを特徴とする。 This invention solves the above-mentioned conventional problems and provides a method for manufacturing a semiconductor device that improves the problems.
Diffusion of impurities is performed by ultrasonic irradiation in either gas phase-solid phase diffusion of impurities or solid phase-solid phase diffusion of impurities applied to the substrate from a vapor growth layer containing impurities deposited on the substrate. It is characterized by shortening the time required to perform the desired diffusion by performing the diffusion under the following conditions.
次に、この発明の製造方法につき図面を参照し
て詳細に説明する。 Next, the manufacturing method of the present invention will be explained in detail with reference to the drawings.
まず、この発明を実施するための装置の一例を
第１図に示す。図において、１は加熱炉、２は半
導体基板、３は前記半導体基板に対向した超音波
照射用ホーンで、超音波振動子４から超音波振動
を供給され、図に破線矢印で示される雰囲気気流
に超音波を照射し加熱炉中の気体分子を振動さ
せ、あるいは半導体基板に直接に超音波振動を伝
達させるものである。超音波振動子４は図示を省
略する整流器、発振器等からなる超音波発信装置
に電路４ａで接続されている。 First, an example of an apparatus for carrying out the present invention is shown in FIG. In the figure, 1 is a heating furnace, 2 is a semiconductor substrate, 3 is an ultrasonic irradiation horn facing the semiconductor substrate, and ultrasonic vibrations are supplied from an ultrasonic vibrator 4, and atmospheric airflow is indicated by broken line arrows in the figure. In this method, ultrasonic waves are irradiated to cause the gas molecules in the heating furnace to vibrate, or ultrasonic vibrations are directly transmitted to the semiconductor substrate. The ultrasonic transducer 4 is connected to an ultrasonic transmitter including a rectifier, an oscillator, etc. (not shown) via an electric line 4a.
叙上の装置を用い、半導体基板に拡散させよう
とすると不純物を含む雰囲気中にて施される不純
物の気相−固相拡散の場合について説明する。 The case of vapor phase-solid phase diffusion of impurities, which is performed in an atmosphere containing impurities when attempting to diffuse impurities into a semiconductor substrate using the above-mentioned apparatus, will be explained.
半導体基板２に例えばＮ型導電領域を形成する
のに、加熱炉１中に不純物源のPOCl3を含むO2、
N2からなる雰囲気ガスを導入し、1100℃に加熱
し20〜30kHzの超音波照射を施しつつ30分間加熱
を行なうことにより所望のリン拡散が達成され
る。Ｐ型導電領域を形成するには不純物源として
BNを用い、上記と同様の条件で処理することに
よつて目的が達成される。 For example, to form an N-type conductive region on the semiconductor substrate 2, O 2 containing POCl 3 as an impurity source is used in the heating furnace 1.
The desired phosphorus diffusion is achieved by introducing an atmospheric gas consisting of N 2 , heating to 1100° C., and heating for 30 minutes while applying ultrasonic irradiation at 20 to 30 kHz. As an impurity source to form a P-type conductive region
The purpose is achieved by using BN and processing under the same conditions as above.
次に、半導体基板２に拡散させようとする不純
物を含む気相成長膜を被着し、この被着膜から半
導体基板に該不純物の拡散を施す固相−固相拡散
の場合を説明すると、半導体基板上にPSG（リン
シリケートガラス）またはBSG（ボロンシリケー
トガラス）を気相成長により被着形成し、N2雰
囲気中にて1100℃に加熱し、かつ20〜30kHzの超
音波照射を施すことにより所望の拡散を達成する
ことができる。 Next, we will explain the case of solid phase-solid phase diffusion in which a vapor phase growth film containing an impurity to be diffused is deposited on the semiconductor substrate 2, and the impurity is diffused from this deposited film into the semiconductor substrate. PSG (phosphosilicate glass) or BSG (boron silicate glass) is deposited on a semiconductor substrate by vapor phase growth, heated to 1100℃ in an N 2 atmosphere, and irradiated with ultrasonic waves of 20 to 30kHz. The desired diffusion can be achieved by
叙上の如く不純物拡散に超音波照射を施す本発
明の方法によれば、例えば第２図に拡散時間を横
軸に、拡散層の深さを縦軸に夫々とり、相互の関
係をプロツトした実線Ａに示すような結果が得ら
れる。 According to the method of the present invention in which ultrasonic irradiation is applied to impurity diffusion as described above, for example, in Figure 2, the mutual relationship is plotted with diffusion time on the horizontal axis and the depth of the diffusion layer on the vertical axis. A result as shown by solid line A is obtained.
これを超音波照射以外の条件を同一にした従来
方法によるものをプロツトした破線Ｂと対比して
判るように、本発明によれば同じ拡散層の深さを
得るための拡散時間が著るしく短縮され、従つて
長時間の加熱が原因となつて生じる従来方法の欠
点が解消されるという効果が得られる。 As can be seen by comparing this with the broken line B plotting the conventional method under the same conditions except for ultrasonic irradiation, the diffusion time to obtain the same depth of the diffusion layer is significantly increased according to the present invention. The advantage is that the heating time is shortened and the disadvantages of conventional methods caused by long heating times are therefore eliminated.
第１図はこの発明の半導体装置の製造方法の実
施に使用される製造装置の一部断面側面図、第２
図はこの発明の効果を説明するための曲線図であ
る。
１……加熱炉、２……半導体基板、３……超音
波照射用ホーン、４……超音波振動子。
FIG. 1 is a partially sectional side view of a manufacturing apparatus used to carry out the method of manufacturing a semiconductor device of the present invention, and FIG.
The figure is a curve diagram for explaining the effects of this invention. 1... Heating furnace, 2... Semiconductor substrate, 3... Ultrasonic irradiation horn, 4... Ultrasonic vibrator.
Claims (1)
散、または半導体基体に被着された不純物を含む
気相成長膜からこの基体に施される該不純物の固
相−固相拡散において不純物の拡散が超音波照射
のもとに行なわれることを特徴とする半導体装置
の製造方法。1. Vapor phase-solid phase diffusion of impurities applied to a semiconductor substrate, or solid phase diffusion of impurities applied to this substrate from a vapor growth film containing impurities deposited on the semiconductor substrate. A method for manufacturing a semiconductor device, characterized in that diffusion is performed under ultrasonic irradiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1970578A JPS54113243A (en) | 1978-02-24 | 1978-02-24 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1970578A JPS54113243A (en) | 1978-02-24 | 1978-02-24 | Production of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54113243A JPS54113243A (en) | 1979-09-04 |
| JPS6140126B2 true JPS6140126B2 (en) | 1986-09-08 |
Family
ID=12006683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1970578A Granted JPS54113243A (en) | 1978-02-24 | 1978-02-24 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54113243A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58164135A (en) * | 1982-03-25 | 1983-09-29 | Agency Of Ind Science & Technol | Semiconductor processing device using convergent ion beam |
| JPS5916327A (en) * | 1982-07-19 | 1984-01-27 | Agency Of Ind Science & Technol | Manufacture of thin film |
-
1978
- 1978-02-24 JP JP1970578A patent/JPS54113243A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54113243A (en) | 1979-09-04 |
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