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JPS6144949B2 - - Google Patents
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JPS6144949B2 - - Google Patents

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Publication number
JPS6144949B2
JPS6144949B2 JP11598578A JP11598578A JPS6144949B2 JP S6144949 B2 JPS6144949 B2 JP S6144949B2 JP 11598578 A JP11598578 A JP 11598578A JP 11598578 A JP11598578 A JP 11598578A JP S6144949 B2 JPS6144949 B2 JP S6144949B2
Authority
JP
Japan
Prior art keywords
thin film
titanium oxide
tio
tat
film layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11598578A
Other languages
Japanese (ja)
Other versions
JPS5542265A (en
Inventor
Toshiaki Yatabe
Yoshinori Nose
Kaoru Iwata
Masao Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teijin Ltd
Original Assignee
Teijin Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teijin Ltd filed Critical Teijin Ltd
Priority to JP11598578A priority Critical patent/JPS5542265A/en
Publication of JPS5542265A publication Critical patent/JPS5542265A/en
Publication of JPS6144949B2 publication Critical patent/JPS6144949B2/ja
Granted legal-status Critical Current

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  • Inorganic Compounds Of Heavy Metals (AREA)
  • Chemically Coating (AREA)
  • Inorganic Insulating Materials (AREA)
  • Manufacturing Of Electric Cables (AREA)

Description

【発明の詳现な説明】[Detailed description of the invention]

本発明は酞化チタン膜の凊理方法に関し、曎に
詳しくはアルキルチタネヌトから圢成された酞化
チタン膜の凊理方法に関する。 酞化チタン膜は、高屈折率誘電䜓膜ずしお皮々
の分野䟋えば硝子補品の衚面反射防止膜透明導
電性フむルム遞択光透過性フむルムケミカル
コンデンサの絶瞁膜有機質基材の衚面改質膜等
においお応甚されおいる。通垞かかる分野におけ
る酞化チタン膜の構成法ずしお真空蒞着やスパツ
タリング等の物理的方法陜極化成熱酞化有
機チタネヌトの塗工等による化孊的方法等があげ
られるが、アルキルチタネヌトの塗工による化孊
的膜圢成手段は蚭備や操䜜が簡単であるこず、又
経枈性の点で有望な手段である。 ずころで、かかるアルキルチタネヌトから圢成
された酞化チタン膜を透明導電性フむルムや遞択
光透過性フむルム等の構成芁玠ずしお甚いるず、
䜿甚分野によ぀おは可芖光透過性に今䞀歩の改善
を芁するものである。 本発明者は、かかる酞化チタン膜の欠点を改良
せんずしお鋭意研究したずころ、特定のアミノ化
合物又はアミノアルコヌル化合物で凊理するこず
により可芖光透過率が倧きく向䞊し、しかも熱線
反射フむルムずしお甚いた際の赀倖線反射率も䜎
䞋しないこずを芋出し本発明に到達したものであ
る。 即ち、本発明は、  アルキルチタネヌトから圢成された酞化チタ
ン膜を䞋蚘䞀般匏及び 〔䜆し、䞊蚘匏䞭、は氎玠原子又はメチ
ル基を衚わし、は〜の敎数は〜
の敎数を衚わす。〕 で衚わされるアミノ化合物及びアミノアルコ
ヌル化合物からなる矀から遞ばれた少なくずも
皮の化合物で接觊凊理するこずを特城ずする
酞化チタン膜の凊理方法。  該酞化チタン膜が成型物基板䞊に蚭けられ
た少なくずも䞀局の金属薄膜及び又は金属酞
化物薄膜䞊に蚭けられおいる䞊蚘第項蚘茉の
凊理方法及び  該酞化チタン膜が成型物基板䞊に蚭けられ
た透明高屈折率誘電䜓薄膜局銀及び又は
金を䞻成分ずする金属薄膜局の䞊に曎に蚭け
られた高屈折率誘電䜓薄膜局である䞊蚘第
項蚘茉の凊理方法である。 本発明方法における酞化チタン薄膜局はアルキ
ルチタネヌトを䞻成分ずする溶質の溶液、通垞は
有機溶剀溶液を甚いお蚭ける。アルキルチタネヌ
トずしおは、テトラアルキルチタネヌト及び又
はその瞮合䜓が挙げられる。テトラアルキルチタ
ネヌトのアルキル基ずしおは特に制限はなく、゚
チルプロピルむ゜プロピルブチル―゚
チルヘキシルステアリル等が挙げられ、就䞭プ
ロピルブチルが奜たしく甚いられる。これらの
瞮合䜓ずは、テトラアルキルチタネヌトを個以
䞊瞮合せしめるこずによ぀お埗られる。䟋えば匏 〔䜆し、匏䞭はアルキル基を衚わし、は正
の敎数である。〕 で衚わされる化合物又はその混合物であり、取
り扱い易さなどの面から、は10以䞋のものが奜
たしい。 特にテトラ――ブチルチタネヌトテトラプ
ロピルチタネヌトの量䜓量䜓10量䜓等が
塗工性の䞊から奜適に甚いられる。 本発明に蚀う酞化チタン薄膜の圢成は、該アル
キルチタネヌトを所定量、溶剀に溶解しお埗られ
る溶液を成圢物基板䞊に塗垃し、也燥熱凊理す
ればよい。 甚いられる成圢基板ずしおは透明な有機高分子
物質の成圢物又はガラス金属酞化物によ぀お
代衚される無機物質の成圢物又は䞡者の耇合䜓
のいずれでもよいが、工業的生産性の点から有機
高分子物質によるものが奜たしく、就䞭、フむル
ム状のものが奜たしい。特にポリ゚チレンテレフ
タレヌトフむルムナむロンフむルムポリカヌ
ボネヌトフむルムポリ゚チレンフむルム等が実
甚䞊奜たしい。 塗工溶液に䜿甚する溶剀ずしおは溶質に察する
溶解床蒞発性奜たしくは150℃以䞋の沞点
及び䞍掻性性溶質ず反応しお䞉次元網状化反応
を倱掻しないこず等の条件が満たされればよ
い。―ヘプタンシクロヘキサントル゚ン
キシレン等の炭化氎玠゚チルアルコヌルむ゜
プロピルアルコヌルブタノヌル等の汎甚性溶媒
たたはこれらの混合溶媒は特に奜たしい。 本発明に斌おは、氎が塗膜の䞉次元網状化促進
に効果的な圹割をはたしおいるために塗工液䞭に
少量の氎を共存させおもよい。 たた、塗工液の安定性を埗るために、䞊蚘溶液
にアセチルアセトンアセト酢酞゚ステルゞア
セトンアルコヌルや乳酞グリコヌル酞等のα―
オキシ酞などの公知のキレヌト剀を加えるこずも
有効である。特にアルコヌル系溶剀が少量の氎を
含む堎合には䞊蚘キレヌト剀の添加によ぀お塗工
液の加氎分解を抌さえ塗工性保存安定性を高め
るこずができ特に効果がある。塗工法は特に限定
なく䞀般の方法、即ち溶剀で皀釈した溶液を塗垃
するか又は浞挬法噎霧法スピナヌ法やグラビ
ダコヌテむングなどのマシンコヌテむング法など
の䞀般的な塗工法をそのたた適甚するこずが出来
る。 本発明に斌お甚いられるアミノ化合物は䞀般
匏
The present invention relates to a method for treating a titanium oxide film, and more particularly to a method for treating a titanium oxide film formed from an alkyl titanate. Titanium oxide films are used as high refractive index dielectric films in various fields such as surface antireflection films for glass products, transparent conductive films, selective light transmitting films, insulating films for chemical capacitors, and surface modification films for organic base materials. It has been applied in Generally, methods for constructing titanium oxide films in this field include physical methods such as vacuum evaporation and sputtering, and chemical methods such as anodization, thermal oxidation, and coating with organic titanates. Targeted film forming means is a promising method in terms of ease of equipment and operation, and economical efficiency. By the way, when a titanium oxide film formed from such alkyl titanate is used as a component of a transparent conductive film, a selective light transmitting film, etc.,
Depending on the field of use, further improvement in visible light transmittance is required. The present inventor conducted intensive research to improve the drawbacks of such a titanium oxide film, and found that by treating it with a specific amino compound or amino alcohol compound, the visible light transmittance was greatly improved. The present invention was achieved by discovering that the infrared reflectance of the infrared rays does not decrease. That is, the present invention provides a titanium oxide film formed from 1 alkyl titanate according to the following general formulas () and (). [However, in the above two formulas, R represents a hydrogen atom or a methyl group, n is an integer of 1 to 5, and m is 1 to 3.
represents an integer. ] A method for treating a titanium oxide film, comprising contact treatment with at least one compound selected from the group consisting of amino compounds and aminoalcohol compounds represented by: 2. The processing method according to item 1 above, wherein the titanium oxide film is provided on at least one metal thin film and/or metal oxide thin film provided on the molded product substrate A, and 3. The titanium oxide film is formed The above is a transparent high refractive index dielectric thin film layer B provided on the object substrate A, and a high refractive index dielectric thin film layer D further provided on the metal thin film layer C containing silver and/or gold as a main component. Second
This is the processing method described in the section. The titanium oxide thin film layer in the method of the present invention is provided using a solution of a solute containing an alkyl titanate as a main component, usually an organic solvent solution. Examples of alkyl titanates include tetraalkyl titanates and/or condensates thereof. The alkyl group of the tetraalkyl titanate is not particularly limited, and examples thereof include ethyl, propyl, isopropyl, butyl, 2-ethylhexyl, stearyl, and the like, among which propyl and butyl are preferably used. These condensates are obtained by condensing two or more tetraalkyl titanates. For example, the expression [However, in the formula, R represents an alkyl group, and m is a positive integer. ] It is a compound represented by the following or a mixture thereof, and from the viewpoint of ease of handling, m is preferably 10 or less. In particular, dimers, tetramers, decamers, etc. of tetra-n-butyl titanate and tetrapropyl titanate are preferably used from the viewpoint of coatability. The titanium oxide thin film according to the present invention can be formed by dissolving a predetermined amount of the alkyl titanate in a solvent and applying a solution obtained on the molded substrate, followed by drying and heat treatment. The molded substrate used may be a molded product of a transparent organic polymer material; a molded product of an inorganic material such as glass or metal oxide; or a composite of both; however, depending on the industrial productivity. From this point of view, it is preferable to use an organic polymer substance, and in particular, a film-like material is preferable. In particular, polyethylene terephthalate film, nylon film, polycarbonate film, polyethylene film, etc. are practically preferred. The solvent used in the coating solution should have solute solubility and evaporability (preferably boiling point below 150℃)
and inertness (does not inactivate the three-dimensional reticulation reaction by reacting with the solute). n-heptane, cyclohexane, toluene,
Hydrocarbons such as xylene, general-purpose solvents such as ethyl alcohol, isopropyl alcohol, butanol, or mixed solvents thereof are particularly preferred. In the present invention, since water plays an effective role in promoting three-dimensional reticulation of the coating film, a small amount of water may be present in the coating solution. In addition, in order to obtain stability of the coating solution, acetylacetone, acetoacetate, diacetone alcohol, lactic acid, glycolic acid, etc. should be added to the above solution.
It is also effective to add a known chelating agent such as an oxyacid. Particularly when the alcoholic solvent contains a small amount of water, the addition of the chelating agent is particularly effective in suppressing hydrolysis of the coating solution and improving coating properties and storage stability. The coating method is not particularly limited, and can be a general method, that is, applying a solution diluted with a solvent, or a general coating method such as a dipping method, a spray method, a spinner method, or a machine coating method such as gravure coating. I can do it. The amino compound used in the present invention has the general formula:

【匏】匏䞭、は氎玠 原子又はメチル基、は〜で瀺され、たた
アミノアルコヌルは
[Formula] (wherein R is a hydrogen atom or a methyl group, n is 1 to 5), and amino alcohol is

【匏】匏䞭、は前蚘定矩 に同じであり、は〜の敎数で瀺される。
これらの化合物は䞀般に皮々の金属に察しお匷固
に配䜍する胜力を持぀おいる。本発明に斌お、か
かるアミノ化合物で凊理するこずにより、透過率
が向䞊する機胜は明確ではないが、アルキルチタ
ネヌトの網状反応により酞化チタン局を圢成する
際は、網状化が䞍完党な郚分ぞの該アミン又はア
ミノアルコヌルのキレヌト化が関䞎しおいるもの
ず考えられる。奜適に甚いられるアミノ化合物ず
しおは、゚チレンゞアミンゞ゚チルトリアミ
ントリ゚チレンテトラミンテトラ゚チレンペ
ンタミンが、又アミノアルコヌル類ずしおぱタ
ノヌルアミンゞ゚タノヌルアミントリ゚タノ
ヌルアミンが挙げられる。 かかるアミノ化合物又は、アミノアルコヌルで
の凊理方法ずしおは䞀般には氎又は有機溶剀に該
化合物を溶解した溶液を塗垃スプレヌしたり、
又溶液䞭に浞挬するこずにより行われる。勿論凊
理埌掗浄や也燥により䜙分の該アミノ化合物溶
剀を陀去した方がよい。凊理甚に䜿甚する有機溶
剀ずしおは該アミノ化合物を溶解し、か぀凊理
埌、也燥掗浄等により容易に陀去できるもので
あればよい。奜適な䟋ずしおはメタノヌル゚タ
ノヌル―プロパノヌルむ゜プロパノヌル
ブタノヌル等のアルコヌル類゚チル゚ヌテル
プロピル゚ヌテルテトラヒドロフラン等の鎖
状環状゚ヌテルアセトンメチル゚チルケト
ンメチルむ゜ブチルケトン等のケトン類酢酞
゚チル酢酞ブチル酢酞む゜ブチル等の゚ステ
ル類塩化メチレンクロロホルム四塩化炭玠
等のハロゲン化炭化氎玠等が䟋瀺される。 溶液濃床は特に限定はないが䞀般には0.1〜
20、奜適には0.5〜10の範囲が甚いられ
る。それ以䞋では凊理効果がないし、それ以䞊で
は濃床を増す効果がない。凊理枩床は宀枩〜80
℃、奜適には宀枩〜50℃の範囲が䞀般に甚いられ
る。 本発明の酞化チタン膜の凊理方法は、本発明芏
定の酞化チタン膜が透明導電性フむルムや遞択光
透過性フむルムに適甚された堎合にその効果を著
しく発揮するが、かかる透明導電性フむルムや遞
択光透過性フむルムずしおは、成型物基板の䞊に
少なくずも䞀局の金属又は金属酞化物の薄膜を積
局させたものがあげられる。䟋えば、 (a) 成型物基板酞化チタン膜 (b) 成型物基板金属又は金属酞化物の膜酞化
チタン膜 (c) 成型物基板酞化チタン膜金属又は金属酞
化物の膜 (d) 成型物基板金属酞化物膜金属膜酞化チ
タン膜 等の構成があげられる。䞊蚘の構成においお、酞
化チタン膜が衚面に出おいる堎合はそのたた前蚘
接觊凊理を斜せばよいが、内郚にある堎合は奜た
しくは酞化チタン膜圢成埌、前蚘接觊凊理を斜し
お埌、曎に他の膜を圢成せしめるのが良い。䞊蚘
各構成においお甚いられる金属膜の玠材ずしおは
金銀銅アルミニりムニツケルパラゞり
ム等から遞ばれた単独又は皮以䞊の合金が挙げ
られ、奜たしくは金銀又はそれらを䞻成分ずす
る合金であり、特に奜たしくは金銀単独又はそ
れらの合金である。又、金属酞化物ずしおは酞化
チタン酞化ゞルコニりム酞化ビスマス酞化
スズ及び酞化むンゞりムが挙げられ、奜たしくは
酞化むンゞりム酞化スズであり、特に奜たしく
は酞化むンゞりムである。 埓぀お本発明を適甚するに奜たしい積局䜓ずし
おは、アルキルチタネヌトから圢成される酞化チ
タン膜をTiO2TAT成型物基板をBaseず衚
わしお、次の劂きものが挙げられる。 (a)−(1) BaseTiO2TAT (b)−(1) BaseAg又はAg合金TiO2TAT (b)−(2) BaseAu又はAu合金TiO2TAT (b)−(3) Base酞化むンゞりムTiO2
TAT (c)−(1) BaseTiO2TATAg又はAg合
金 (c)−(2) BaseTiO2TATAu又はAu合
金 (d)−(1) BaseTiO2TATAg又はAg合
金TiO2TAT (d)−(2) BaseTiO2TATAu又はAu合
金TiO2TAT (d)−(3) BaseTiO2Ag又はAg合金TiO2
TAT (d)−(4) BaseTiO2Au又はAu合金TiO2
TAT (d)−(5) BaseTiO2TATAg又はAg合
金TiO2 (d)−(6) BaseTiO2TATAu又はAu合
金TiO2 䞊蚘においお(d)−(1)〜(d)−(6)は成型物基板
高屈折率誘電䜓薄膜局金属薄膜局高屈折
率誘電䜓薄膜局なる構成に盞圓するものである
が、かかる構成においお高屈折率誘電䜓薄膜又
はは真空蒞着やスパツタリング等で蚭けるこず
が可胜であり、それを構成する玠材ずしおは酞化
チタンの他に酞化ゞルコニりム酞化ビスマス
硫化亜鉛酞化スズ及び酞化むンゞりムが挙げら
れるが、その䞭でも酞化チタンが奜たしいものな
のである。 これらの膜ずしおは高屈折率誘電䜓薄膜及び
は50〜1000Å、奜たしくは100〜500Åであり、
金属薄膜は30〜500Å、奜たしくは50〜200Åで
ある。 以䞊の皮々の積局䜓の䞭で最も奜たしいもの
は、透明成型物基板䞊に高屈折率誘電䜓薄膜局
ずしおのTiO2TAT金属又は合金の薄膜
局及び高屈折率誘電䜓薄膜局ずしおのTiO2
TATが蚭けられた倚局積局䜓であ぀お、これ
に本発明を適甚するのが奜たしい。かかる積局䜓
の特に奜たしい䟋をで衚
わせば以䞋の劂くである。 (d)−(7) TiO2TATAgTiO2TAT (d)−(8) TiO2TATAuTiO2TAT (d)−(9) TiO2TATAg−CuTiO2
TAT (d)−(10) TiO2TATAg−AuTiO2
TAT (d)−(11) TiO2TATAgS含有Ag又はAg合
金TiO2TAT 本発明により、その光孊的性胜が高められた前
蚘の積局䜓は、曎に衚面に保護コヌテむングをも
うけるこずにより、曎にその実甚性を高めるこず
ができる。 かくしお、埗られた遞択光透過性積局䜓はその
優れた透過性ず熱線反射胜により、冷凍冷蔵シペ
ヌケヌスビルや䞀般家庭の窓枩宀等に甚いる
こずが可胜である。 以䞋に、本発明のより具䜓的な説明を実斜䟋で
瀺す。なお、実斜䟋䞭で光透過率は特にこずわら
ない限り波長500nmにおける倀である。赀倖線反
射率は、日立補䜜所EPI―型赀倖分光噚に反射
率枬定装眮を取付け、スラむドガラスに銀を充分
に厚く玄3000Å真空蒞着したものの反射率を
100ずしお、特に断らない限り10Όに斌お枬定
した。 実斜䟋 〜 光透過率86膜厚50Όの二軞延䌞ポリ゚チ
レンテレフタレヌトフむルムを透明な成型物基板
ずし局ずしお厚さ300Å酞化チタン薄膜局
局ずしお厚さ170Åの銀ず銅の合金よりなる薄
膜局銀92重量銅重量及び局ずしお
厚さ300Åの酞化チタン薄膜局を順次積局しお、
遞択光透過性を有する積局䜓を埗た。 酞化チタン薄膜局はいずれもテトラブチルチタ
ネヌトの量䜓郚む゜プロピルアルコヌル97
郚からなる溶液をバヌコヌタヌで塗垃し120℃
分間加熱しお蚭けた。金属薄膜局は銀―銅合金
銀70銅30を甚い抵抗加熱方匏で真空蒞
着しお蚭けた。酞化チタン薄膜局に含たれる、ブ
チル基の含有量はマスフラグメントグラフむヌ法
マスNo.56で定量した結果4.5であ぀た。 埗られたフむルムの可芖光透過率0.5Όは
78であり、ΌΌ及び10Όの赀倖反射率は
倫々989798であ぀た。 埗られたフむルムを20℃50℃に蚭定した゚チ
レンゞアミン0.5molむ゜プロパノヌル溶液
トリ゚タノヌルアミン0.3molむ゜プロパノヌ
ル溶液に各々10分間浞挬しその埌よく氎掗したの
ち也燥させお光孊特性の倉化を芋た。結果を衚
に蚘した。
It is represented by the formula: (wherein R is the same as defined above and m is an integer of 1 to 3).
These compounds generally have the ability to strongly coordinate with various metals. In the present invention, the function of improving transmittance by treatment with such an amino compound is not clear, but when forming a titanium oxide layer by a network reaction of alkyl titanate, it is possible to It is thought that chelation of the amine or amino alcohol is involved. Preferably used amino compounds include ethylenediamine, diethyltriamine, triethylenetetramine, and tetraethylenepentamine, and aminoalcohols include ethanolamine, diethanolamine, and triethanolamine. Treatment methods with such amino compounds or amino alcohols generally include coating or spraying a solution of the compound dissolved in water or an organic solvent, or
It can also be done by immersing it in a solution. Of course, it is better to remove the excess amino compound and solvent by washing or drying after treatment. The organic solvent used for treatment may be any organic solvent as long as it dissolves the amino compound and can be easily removed by drying, washing, etc. after treatment. Suitable examples include methanol, ethanol, n-propanol, isopropanol,
Alcohols such as butanol, ethyl ether,
Chain and cyclic ethers such as propyl ether and tetrahydrofuran; ketones such as acetone, methyl ethyl ketone and methyl isobutyl ketone; esters such as ethyl acetate, butyl acetate and isobutyl acetate; carbonized halides such as methylene chloride, chloroform and carbon tetrachloride; Examples include hydrogen. Solution concentration is not particularly limited, but is generally 0.1%~
20%, preferably a range of 0.5% to 10% is used. If it is less than that, there is no treatment effect, and if it is more than that, there is no effect of increasing the concentration. Processing temperature is room temperature ~ 80℃
℃, preferably in the range of room temperature to 50 ℃ is generally used. The method for treating a titanium oxide film of the present invention exhibits remarkable effects when the titanium oxide film defined by the present invention is applied to a transparent conductive film or a selectively transparent film. Examples of the light-transmissive film include those in which at least one thin film of metal or metal oxide is laminated on a molded substrate. For example, (a) molded product substrate/titanium oxide film; (b) molded product substrate/metal or metal oxide film/titanium oxide film; (c) molded product substrate/titanium oxide film/metal or metal oxide film (d) Examples include structures such as molded product substrate/metal oxide film/metal film/titanium oxide film. In the above configuration, if the titanium oxide film is exposed on the surface, the contact treatment may be performed as is, but if the titanium oxide film is inside, it is preferable to perform the contact treatment after the titanium oxide film is formed, and then further perform the contact treatment. It is preferable to form a film. Materials for the metal film used in each of the above configurations include gold, silver, copper, aluminum, nickel, palladium, etc. alone or an alloy of two or more, preferably gold, silver, or a main component of these. Gold, silver alone, or an alloy thereof is particularly preferred. Examples of metal oxides include titanium oxide, zirconium oxide, bismuth oxide, tin oxide, and indium oxide, with indium oxide and tin oxide being preferred, and indium oxide being particularly preferred. Therefore, preferred laminates to which the present invention is applied include the following, where the titanium oxide film formed from alkyl titanate is TiO 2 (TAT) and the molded substrate is Base. (a)-(1) Base/TiO 2 (TAT), (b)-(1) Base/Ag or Ag alloy/TiO 2 (TAT), (b)-(2) Base/Au or Au alloy/TiO 2 (TAT), (b)−(3) Base/Indium oxide/TiO 2
(TAT), (c)-(1) Base/TiO 2 (TAT)/Ag or Ag alloy, (c)-(2) Base/TiO 2 (TAT)/Au or Au alloy, (d)-(1 ) BaseTiO 2 (TAT)Ag or Ag alloyTiO 2 (TAT) (d)−(2) BaseTiO 2 (TAT)Au or Au alloyTiO 2 (TAT), (d)−( 3) Base/TiO 2 /Ag or Ag alloy/TiO 2
(TAT), (d)−(4) Base/TiO 2 /Au or Au alloy/TiO 2
(TAT), (d)-(5) Base/TiO 2 (TAT)/Ag or Ag alloy/TiO 2 , (d)-(6) Base/TiO 2 (TAT)/Au or Au alloy/TiO 2 above In (d)-(1) to (d)-(6), molded product substrate A/
This corresponds to the structure of high refractive index dielectric thin film layer B/metal thin film layer C/high refractive index dielectric thin film layer D, but in this structure, high refractive index dielectric thin film B or D is formed by vacuum deposition, sputtering, etc. In addition to titanium oxide, zirconium oxide, bismuth oxide,
Examples include zinc sulfide, tin oxide, and indium oxide, and among these, titanium oxide is preferred. Among these films, the high refractive index dielectric thin films B and D have a thickness of 50 to 1000 Å, preferably 100 to 500 Å,
The metal thin film C has a thickness of 30 to 500 Å, preferably 50 to 200 Å. Among the various laminates mentioned above, the most preferable one is TiO 2 (TAT) as a high refractive index dielectric thin film layer B on a transparent molded substrate A, a metal or alloy thin film layer C, and a high refractive index dielectric. TiO2 as thin film layer D
(TAT), and it is preferable to apply the present invention to this multilayer laminate. A particularly preferable example of such a laminate is represented by (B)/(C)/(D) as follows. (d)−(7) TiO 2 (TAT)/Ag/TiO 2 (TAT) (d)−(8) TiO 2 (TAT)/Au/TiO 2 (TAT) (d)−(9) TiO 2 ( TAT)/Ag-Cu/ TiO2
(TAT) (d)−(10) TiO 2 (TAT)/Ag−Au/TiO 2
(TAT) (d)-(11) TiO 2 (TAT)/AgS-containing Ag or Ag alloy/TiO 2 (TAT) According to the present invention, the above-mentioned laminate whose optical performance has been improved can further be protected on the surface. By adding a coating, its practicality can be further enhanced. The selective light transmitting laminate thus obtained can be used for freezing and refrigerating cases, windows of buildings and ordinary homes, greenhouses, etc. due to its excellent transmittance and heat ray reflecting ability. A more specific explanation of the present invention will be given below using Examples. In the Examples, the light transmittance is a value at a wavelength of 500 nm unless otherwise specified. The infrared reflectance is measured by attaching a reflectance measurement device to a Hitachi EPI-type infrared spectrometer and measuring the reflectance of a slide glass with a sufficiently thick layer of vacuum-deposited silver (approximately 3000 Å).
Measurements were made at 10Ό unless otherwise specified as 100%. Examples 1 to 2 Transparent molded substrate A is a biaxially stretched polyethylene terephthalate film with a light transmittance of 86% and a film thickness of 50 Όm, and a titanium oxide thin film layer with a thickness of 300 Šas layer B.
A thin film layer of silver and copper alloy (92% by weight, 8% by weight of copper) with a thickness of 170 Å as the C layer and a titanium oxide thin film layer with a thickness of 300 Å as the D layer were sequentially laminated,
A laminate having selective light transmittance was obtained. The titanium oxide thin film layer is made of 3 parts of tetrabutyl titanate and 97 parts of isopropyl alcohol.
Coat a solution consisting of 3 parts with a bar coater at 120℃.
Heat and set for a minute. The metal thin film layer was formed by vacuum deposition using a resistance heating method using a silver-copper alloy (70% silver, 30% copper). The content of butyl groups contained in the titanium oxide thin film layer was determined to be 4.5% by the mass fragment graphics method (Mass No. 56). The visible light transmittance (0.5Ό) of the obtained film is
The infrared reflectance of 4Ό, 6Ό and 10Ό was 98%, 97% and 98%, respectively. The obtained film was heated to 20°C and 50°C in an ethylenediamine 0.5 mol/isopropanol solution.
Each sample was immersed in a 0.3 mol triethanolamine/isopropanol solution for 10 minutes, then thoroughly washed with water and dried to observe changes in optical properties. Table 1 shows the results.
I wrote it down.

【衚】 比范䟋 〜 実斜䟋ず同様の方法で圢成された遞択光透過
性を有する積局䜓を比范のために20℃50℃に蚭
定した氎む゜プロパノヌルに10分間浞挬し光孊
特性の倉化を衚に蚘した。
[Table] Comparative Examples 1 to 2 For comparison, a laminate with selective light transmittance formed in the same manner as in Example 1 was immersed in water and isopropanol set at 20°C and 50°C for 10 minutes, and the optical properties were measured. The changes are shown in Table 2.

【衚】 比范䟋にみられる様に単なる氎アルコ
ヌルで凊理した堎合、䜕らの光孊的特性の向䞊は
みられなか぀た。 実斜䟋 〜 金属薄膜局を厚さ170Åの金銀合金金
重量銀93重量で構成する以倖は実斜䟋
ず同様の方法で遞択光透過性積局䜓を埗た。金
銀合金からなる金属薄膜局は金銀合金金重
量銀93重量をタヌゲツトずした䜎枩マグ
ネトロンスパタリングで蚭けた。 埗られたフむルムの可芖光透過率は77であり
赀倖反射率は95であ぀た。 埗られたフむルムを20℃50℃に蚭定した゚チ
レンゞアミン0.5molむ゜プロパノヌル溶液
トリ゚チレンテトラミン0.3mol゚タノヌル溶
液に10分間浞挬しその埌よく氎掗したのち也燥さ
せお光孊特性の倉化を芋た。結果を衚に蚘し
た。
[Table] As seen in Comparative Examples 1 and 2, when treated simply with water or alcohol, no improvement in optical properties was observed. Examples 3 to 4 Metal thin film layer C was made of gold and silver alloy (gold 7) with a thickness of 170 Å.
Example 1 except that the composition was composed of silver (93% by weight)
A selective light transmitting laminate was obtained in the same manner as above. Money,
The metal thin film layer made of a silver alloy was formed by low-temperature magnetron sputtering targeting gold and a silver alloy (7% by weight of gold, 93% by weight of silver). The visible light transmittance of the obtained film was 77% and the infrared reflectance was 95%. The obtained film was heated to 20℃ and 50℃ in ethylenediamine 0.5mol/isopropanol solution.
It was immersed in a 0.3 mol triethylenetetramine/ethanol solution for 10 minutes, then thoroughly washed with water, and then dried to observe changes in optical properties. The results are shown in Table 3.

【衚】 比范䟋 〜 実斜䟋ず同様の方法で圢成された遞択光透過
性を有する積局䜓を比范のために、20℃50℃に
蚭定した゚タノヌルむ゜プロパノヌルに10分間
浞挬し光孊特性の倉化を芋た。 結果を衚に蚘す。
[Table] Comparative Examples 3 to 4 For comparison, a laminate with selective light transmittance formed in the same manner as in Example 3 was immersed in ethanol and isopropanol set at 20°C and 50°C for 10 minutes. I saw a change in characteristics. The results are shown in Table 4.

【衚】 衚に芋られる様に゚タノヌルむ゜プロパノ
ヌルで凊理しただけでは光孊特性に䜕ら有効な効
果は芋られなか぀た。
[Table] As shown in Table 4, treatment with ethanol and isopropanol alone did not have any effective effect on optical properties.

Claims (1)

【特蚱請求の範囲】  アルキルチタネヌトから圢成された酞化チタ
ン膜を䞋蚘䞀般匏及び 〔䜆し䞊蚘匏䞭、は氎玠原子又はメチル基
を衚わし、は〜の敎数は〜の敎数
を衚わす。〕 で衚わされるアミノ化合物及びアミノアルコヌ
ル化合物からなる矀から遞ばれた少なくずも皮
の化合物で接觊凊理するこずを特城ずする酞化チ
タン膜の凊理方法。  該酞化チタン膜が成型物基板䞊に蚭けられ
た少なくずも䞀局の金属薄膜及び又は金属酞化
物薄膜䞊に蚭けられおいる特蚱請求の範囲第項
蚘茉の凊理方法。  該酞化チタン膜が成型物基板䞊に蚭けられ
た透明高屈折率誘電䜓薄膜局銀及び又は金
を䞻成分ずする金属薄膜局の䞊に曎に蚭けられ
た高屈折率誘電䜓薄膜局である特蚱請求の範囲
第項蚘茉の凊理方法。
[Claims] 1. A titanium oxide film formed from an alkyl titanate is formed by the following general formulas () and (). [However, in the above two formulas, R represents a hydrogen atom or a methyl group, n represents an integer of 1 to 5, and m represents an integer of 1 to 3. ] A method for treating a titanium oxide film, comprising contact treatment with at least one compound selected from the group consisting of amino compounds and aminoalcohol compounds represented by: 2. The processing method according to claim 1, wherein the titanium oxide film is provided on at least one metal thin film and/or metal oxide thin film provided on the molded product substrate A. 3. A transparent high refractive index dielectric thin film layer B on which the titanium oxide film is provided on the molded product substrate A, and a high refractive index dielectric film further provided on the metal thin film layer C containing silver and/or gold as a main component. The treatment method according to claim 2, wherein the body thin film layer D is a body thin film layer D.
JP11598578A 1978-09-22 1978-09-22 Titanium oxide film treating method Granted JPS5542265A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11598578A JPS5542265A (en) 1978-09-22 1978-09-22 Titanium oxide film treating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11598578A JPS5542265A (en) 1978-09-22 1978-09-22 Titanium oxide film treating method

Publications (2)

Publication Number Publication Date
JPS5542265A JPS5542265A (en) 1980-03-25
JPS6144949B2 true JPS6144949B2 (en) 1986-10-06

Family

ID=14676014

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11598578A Granted JPS5542265A (en) 1978-09-22 1978-09-22 Titanium oxide film treating method

Country Status (1)

Country Link
JP (1) JPS5542265A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188929U (en) * 1981-05-25 1982-11-30
JP2824749B2 (en) * 1994-07-15 1998-11-18 石原産業株匏䌚瀟 Surface-modified titanium oxide film, method for producing the same, and photoelectric conversion element using the same
JP4620990B2 (en) * 2004-09-17 2011-01-26 囜立倧孊法人京郜倧孊 Metal oxide nanocrystal and method for producing the same
WO2009104695A1 (en) * 2008-02-22 2009-08-27 䜏友化孊株匏䌚瀟 Method for producing transparent conductive substrate

Also Published As

Publication number Publication date
JPS5542265A (en) 1980-03-25

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