JPS6159903B2 - - Google Patents
Info
- Publication number
- JPS6159903B2 JPS6159903B2 JP53115986A JP11598678A JPS6159903B2 JP S6159903 B2 JPS6159903 B2 JP S6159903B2 JP 53115986 A JP53115986 A JP 53115986A JP 11598678 A JP11598678 A JP 11598678A JP S6159903 B2 JPS6159903 B2 JP S6159903B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- layer
- film layer
- laminate
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 44
- 239000010409 thin film Substances 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 16
- 239000004332 silver Substances 0.000 claims description 16
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 14
- -1 alkyl titanate Chemical compound 0.000 claims description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 150000003464 sulfur compounds Chemical group 0.000 claims description 7
- 239000011241 protective layer Substances 0.000 claims description 6
- 239000011253 protective coating Substances 0.000 claims description 5
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 125000004434 sulfur atom Chemical group 0.000 claims description 3
- 230000007062 hydrolysis Effects 0.000 claims description 2
- 238000006460 hydrolysis reaction Methods 0.000 claims description 2
- 239000004202 carbamide Substances 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 24
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 14
- 238000000576 coating method Methods 0.000 description 8
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 239000004925 Acrylic resin Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- FCSHMCFRCYZTRQ-UHFFFAOYSA-N N,N'-diphenylthiourea Chemical compound C=1C=CC=CC=1NC(=S)NC1=CC=CC=C1 FCSHMCFRCYZTRQ-UHFFFAOYSA-N 0.000 description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- KQJQICVXLJTWQD-UHFFFAOYSA-N N-Methylthiourea Chemical compound CNC(N)=S KQJQICVXLJTWQD-UHFFFAOYSA-N 0.000 description 2
- FULZLIGZKMKICU-UHFFFAOYSA-N N-phenylthiourea Chemical compound NC(=S)NC1=CC=CC=C1 FULZLIGZKMKICU-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- UCGFRIAOVLXVKL-UHFFFAOYSA-N benzylthiourea Chemical compound NC(=S)NCC1=CC=CC=C1 UCGFRIAOVLXVKL-UHFFFAOYSA-N 0.000 description 2
- GMEGXJPUFRVCPX-UHFFFAOYSA-N butylthiourea Chemical compound CCCCNC(N)=S GMEGXJPUFRVCPX-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- LEEHHPPLIOFGSC-UHFFFAOYSA-N cyclohexylthiourea Chemical compound NC(=S)NC1CCCCC1 LEEHHPPLIOFGSC-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- HKJYVRJHDIPMQB-UHFFFAOYSA-N propan-1-olate;titanium(4+) Chemical compound CCCO[Ti](OCCC)(OCCC)OCCC HKJYVRJHDIPMQB-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910002696 Ag-Au Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- GMEHFXXZSWDEDB-UHFFFAOYSA-N N-ethylthiourea Chemical compound CCNC(N)=S GMEHFXXZSWDEDB-UHFFFAOYSA-N 0.000 description 1
- XGEGHDBEHXKFPX-UHFFFAOYSA-N N-methylthiourea Natural products CNC(N)=O XGEGHDBEHXKFPX-UHFFFAOYSA-N 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- WJGAPUXHSQQWQF-UHFFFAOYSA-N acetic acid;hydrochloride Chemical compound Cl.CC(O)=O WJGAPUXHSQQWQF-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- HTKFORQRBXIQHD-UHFFFAOYSA-N allylthiourea Chemical compound NC(=S)NCC=C HTKFORQRBXIQHD-UHFFFAOYSA-N 0.000 description 1
- 229960001748 allylthiourea Drugs 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- NDIUNRFKKUBPRJ-UHFFFAOYSA-N ethylidenethiourea Chemical compound CC=NC(N)=S NDIUNRFKKUBPRJ-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- JTQPTNQXCUMDRK-UHFFFAOYSA-N propan-2-olate;titanium(2+) Chemical compound CC(C)O[Ti]OC(C)C JTQPTNQXCUMDRK-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 150000003585 thioureas Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
Description
本発明は選択光透過性を有する積層体の改良さ
れた製造方法に関し、更に詳細には透明高屈折率
誘電体層で両面を被覆された金属薄膜層を少なく
とも片面に有する透明成型物基板からなる積層体
の改良された製造方法に関する。
透明導電性膜は選択光透過性即ち可視光域の光
に対して透明であり、近赤外光以上の長波長光に
対しては反射能を有しているので透明断熱膜とし
ても有用である。従つて太陽エネルギー集熱器、
温水器、太陽熱発電グリーンハウス、建築物の窓
等に使用され得る。特に近代建築物において壁面
の大きな割合を占める窓からの太陽エネルギー利
用や、エネルギー放散を防げる透明断熱窓として
の機能は今後益々重要性が増すものと思われる。
この様に、透明導電性膜および選択透過性膜は
エレクトロニクス、太陽エネルギー利用の観点か
ら極めて重要であり、均質で高性能な膜が工業的
に安価に且つ大量に供給されることが当該業界か
ら切望されていた。
透明導電性膜として、従来から知られているも
のに金、銀、銅、パラジウム等の導電性金属膜を
ある波長領域にわたり選択的に透明にしたものが
知られている。
例えば代表的な構成として金属薄膜を透明高屈
折率誘電体薄膜ではさんだ積層体であり、例えば
真空蒸着、反応性蒸着又はスパツタリングで形成
されたBi2O3/Au/Bi2O3、ZnS/Ag/ZnS又は
TiO2/Ag/TiO2等のサンドイツチ状構造の積層
体が提案されている。これらの中でも金属層とし
て銀を用いたものは、銀自体がもつ光学的特性に
より、可視光領域における透明性及び赤外光に対
する反射特性に優れていること、また導電性にお
いても好ましい特性を有していること等の点から
材料として特に優れている。しかし透明高屈折率
誘電体薄膜を、上記の如き真空蒸着、反応性蒸着
又はスパツタリング等の手段で形成せしめる方法
は
(イ) 膜形成速度が遅い。
(ロ) 組成・膜厚の制御が困難である。
(ハ) 大面積の膜形成は装置が大型になり、巨額な
設備投資を必要とする。
等の不都合を有している為、前記した如く安価な
製品を提供し難い。本発明者らは、かかる経済的
不都合を解決する手段として、高屈折率誘電体薄
膜層を化学的コーテイング法により安価に形成し
うる手段を見出し、既に出願した。
しかしながら、かかる手段により形成された透
明屈折率誘電体薄膜層により被覆された銀薄膜層
からなる積層膜は高温環境下では性能の劣化が生
じ易く、安定に長期間その性能を維持することが
困難である場合が多い。この劣化は主として透明
高屈折率誘電体薄膜層中を銀が表層へ向けて拡散
してゆくことに起因しているものであると思われ
る。
本発明者らは、かかる欠点のないすぐれた選択
光透過性を有する積層体を得るべく鋭意研究の結
果、透明導電性膜上に硫黄化合物を含む保護コー
テイングを設けることにより、金属層の少くとも
界面に硫黄化合物で処理された金属層を形成出
来、前記の如き欠点を大巾に改良しうることを見
出し、本発明に到達した。
即ち、本発明は、
1 透明な成型物基体Aの少なくとも片面に、透
明高屈折率誘電体薄膜層B、銀又は銀の合金か
らなる金属薄膜層C、透明高屈折率誘電体薄膜
層D及び保護層Eが順次積層されてなる積層体
の製造に於て透明高屈折率誘電体薄膜層D上に
設けられる保護層Eが、銀に対して活性な硫黄
原子を有するチオ尿素、チオ尿素の炭素原子数
20個以下の炭化水素基による誘導体からなる群
から選ばれた少くとも1種の硫黄化合物を含む
保護コーテイング液を塗布して形成せしめられ
ることを特徴とする積層体の製造法。
2 該透明高屈折率誘電体薄膜層B及び/又はD
がアルキルチタネートの加水分解により形成さ
れた酸化チタン薄膜層である上記第1項記載の
積層体の製造法である。
従つて本発明の主題は、硫酸化合物処理による
選択光透過性を有する積層体の改良された製造方
法を提供することにある。
以下、本発明の各事項について詳細に説明す
る。
本発明で用いられる透明な成型物基板Aとは有
機系、無機系およびこれらの複合された成型物の
いずれでもよい。有機系成型物としては、例えば
ポリエチレンテレフタレート樹脂、ポリエチレン
ナフタレート樹脂、ポリブチレンテレフタレート
樹脂、ポリカーボネート樹脂、アクリル樹脂、ポ
リアミド樹脂、その他樹脂の成型物があげられ
る。一方、無機系成型物としては、例えばソーダ
ガラス、硼硅酸ガラスなどのガラス質、アルミ
ナ、マグネシア、ジルコニア、シリカ系などの金
属酸化物などの成型物があげられる。これらの成
型物は板状、シート状、フイルム状、棒状等の任
意の型に成型されている。ただし加工性の面より
シート状、フイルム状、板状のものが好ましく、
就中フイルム状のものが生産性の面より特に好ま
しい。
更に二軸配向したポリエチレンテレフタレート
フイルムが透明性、フイルムの強度、積層体との
接着性などの点より好ましい。
本発明の積層体を構成する透明高屈折率誘電体
薄膜層B又はDとしては金属層における反射を防
止する効果を有するものならば特に限定されるも
のではないが、可視光に対して1.7以上、好まし
くは1.8以上の屈折率を有し、可視光透過率80%
以上、好ましくは90%以上であるのが効果的であ
る。又その膜厚は50〜1000Å、好ましくは100〜
500Åである。これらの条件を満すものとして
は、例えば酸化チタン、酸化ジルコニウム、酸化
ビスマス、硫化亜鉛、酸化錫及び酸化インジウム
等の薄膜層があげられる。これらの薄膜層は、ス
パツタリング、真空蒸着、イオンプレーテイン
グ、湿式塗工等の方法によつて設ける事ができ
る。就中、本発明がその効果を発揮するのは透明
高屈折率誘電体薄膜B又はDとして、その光学的
特性の優秀な酸化チタン薄膜が用いられた場合で
あつて、特にアルキルチタネートから形成された
酸化チタン薄膜層が用いられる場合である。アル
キルチタネートから形成された酸化チタン薄膜層
は、有機物基板に対する接着性も良好であつてこ
の観点からも好ましいものである。
アルキルチタネートとしては、例えばテトラブ
チルチタネート、テトラエチルチタネート、テト
ラプロピルチタネート、ジイソプロポキシチタニ
ウム、ビスアセチルアセトネート等があげられ、
とりわけテトラブチルチタネート、テトラプロピ
ルチタネートが好ましく用いられる。これらのア
ルキルチタネートはそのまま使用してもよく、ま
た2量体、4量体、10量体などの予備縮合をした
ものも好ましく使用できる。又これらのアルキル
チタネートをアセチルアセトンの様な化合物で安
定化させて使用してもよい。アルキルチタネート
より酸化チタン薄膜層をつくるには、アルキルチ
タネートの有機溶剤溶液を基板の表面に塗布する
か、浸漬法、噴霧法、スピナー法やマシンコーテ
イング法等一般的溶液の塗工法をそのまま使用す
ることができる。
金属薄膜層Cを構成する金属は、銀又は銀の合
金である。銀(Ag)に含有させうる金属として
は金(Au)、白金(Pt)及び銅(Cu)が代表的
なものとして挙げられるが、本発明の効果及び積
層体の性能を損なわない限りにおいて他の成分を
含有していてもよい。
金属薄膜の膜厚は透明導電性膜又は選択光透過
膜としての要求特性をもてば別に限定されるもの
ではないが、赤外反射能又は導電性をもつために
は少くともある程度の領域で連続性を持つことが
必要である。連続構造をもつ為には膜厚として約
40Å以上が必要であり、又太陽エネルギーに対す
る透明性の点より500Å以下が好ましい。金属薄
膜の膜厚はより薄いほど可視光透過性が良くなる
ので透明性を増す為には250Å以下の膜厚が良
く、又充分な赤外反射能をもたせるためには50Å
以上の膜厚が好ましい。
金属薄膜層Cを形成する方法には、真空蒸着
法、スパツタリング法、プラズマ溶射法、気相メ
ツキ法、化学メツキ法、及びこれらの組合せ方法
のいずれでも可能である。これらの方法のうち基
板に適した方法を使用すれば良い。
又、本発明において使用される硫黄化合物は銀
に対して活性な硫黄原子を有する化合物であつ
て、チオ尿素及びその誘導体が挙げられる。チオ
尿素誘導体としてはアミノ基の水素原子が炭化水
素基、例えば炭素原子数20以下の炭化水素基で置
換されたものが挙げられ、アリルチオ尿素、N−
ベンジルチオ尿素、N−メチルチオ尿素、N・
N′−ジメチルチオ尿素、N−エチルチオ尿素、
N・N′−ジエチルチオ尿素、N−ブチルチオ尿
素、N−フエニルチオ尿素、N・N′−ジフエニ
ルチオ尿素及びN−エチリデンチオ尿素、N・
N′−シクロヘキシルチオ尿素、N−シクロヘキ
シルチオ尿素が例示される。
本発明に於ては保護層Eは透明屈折率層上D上
に前記硫黄化合物を含有する保護コーテイング液
を塗布して形成する。かかる保護コーテイング剤
としては透明であり、かつ該硫黄化合物に不活性
でかつ相溶性があればよい。好適に用いられる例
としては、アクリル樹脂、ポリスチレン樹脂、ポ
リビニルホルマール、ポリビニルブチラール、ポ
リ塩化ビニル、ポリ塩化ビニル一酢ピ共重合体等
のビニル系樹脂、ポリウレタン、エポキシ、アル
キツド、不飽和ポリエステル、シリコーン樹脂等
があげられる。
本発明のより具体的な説明を以下の実施例で示
す。なお実施例中では特に言及しない限り、光透
過率は波長500nmにおける値である。赤外線反
射率は日立製作所EPI−型赤外分光器に反射率
測定装置をとりつけ、スライドガラスに銀を充分
厚く、(約3000Å)真空蒸着したものの反射率を
100%として測定した。
実施例 1〜4
光透過率86%、厚さ50μの2軸延伸ポリエチレ
ンテレフタレートフイルムに第1層として300Å
の酸化チタン層、第2層として厚さ160Åの銀層
及び第3層として厚さ300Åの酸化チタン層を順
次積層し、透明導電性及び選択光透過性を有する
積層体をフイルム上に形成させた。
尚第一層及び第三層の酸化チタン薄膜層は、い
ずれもテトラブチルチタネートの4量体1部、ア
セチルアセトン1部、イソプロピルアルコール26
部からなる溶液をバーコーターで塗布し、120℃
で3分加熱して設けた。
銀層は抵抗加熱方式で真空蒸着して設けた。
このようにしてつくられたポリエチレンテレフ
タレートフイルム/酸化チタン層/Ag層/酸化
チタン層からなる構成の積層体を以後積層体○イと
称する。
この積層体○イ上に、ポリアクリル樹脂(三菱レ
ーヨン株、ダイヤナールLR574)1部とメチルイ
ソブチルケトン1部を混合し、さらに1・3−ジ
フエニル−2−チオ尿素を所定割合添加した溶液
を、バーコーターで2μ塗布し、120℃で3分間
乾燥させた。
かくして得られた積層体を90℃の熱風乾燥器を
用いて耐熱試験を行ない、耐熱性の変化を赤外反
射率の変化で追跡し、反射率が初期値の85%以下
になるまでの時間を劣化時間として求めた。参考
のために添加しない場合の結果も示す。この結果
を表−1に示す。
ここで示されている添加量とは、ポリアクリル
樹脂固形分に対する1・3−ジフエニル−2−チ
オ尿素の重量分率(%)のことを意味する。
The present invention relates to an improved method for manufacturing a laminate having selective light transmission, and more particularly, the present invention relates to an improved method for manufacturing a laminate having selective light transmission, and more particularly, the present invention is comprised of a transparent molded substrate having a metal thin film layer on at least one side coated with a transparent high refractive index dielectric layer on both sides. The present invention relates to an improved method of manufacturing a laminate. The transparent conductive film has selective light transmittance, that is, it is transparent to light in the visible light range, and has the ability to reflect light with longer wavelengths than near-infrared light, so it is useful as a transparent heat insulating film. be. So solar energy collector,
It can be used in water heaters, solar power generation greenhouses, building windows, etc. In particular, the use of solar energy from windows, which occupy a large proportion of the wall surface of modern buildings, and the function of transparent insulating windows that prevent energy dissipation are expected to become increasingly important in the future. In this way, transparent conductive films and permselective films are extremely important from the viewpoint of electronics and solar energy utilization, and the industry is hoping that homogeneous, high-performance films can be supplied industrially at low cost and in large quantities. It was coveted. Conventionally known transparent conductive films include conductive metal films such as gold, silver, copper, palladium, etc. that are made selectively transparent over a certain wavelength range. For example, a typical structure is a laminate in which a metal thin film is sandwiched between transparent high refractive index dielectric thin films, such as Bi 2 O 3 /Au/Bi 2 O 3 , ZnS/ Ag/ZnS or
A laminate with a sandwich structure such as TiO 2 /Ag/TiO 2 has been proposed. Among these, those using silver as a metal layer have excellent transparency in the visible light region and reflective properties for infrared light due to the optical properties of silver itself, and also have favorable properties in terms of conductivity. It is particularly excellent as a material because of its properties. However, the method of forming a transparent high refractive index dielectric thin film by means such as vacuum evaporation, reactive evaporation, or sputtering as described above is (a) slow in film formation. (b) It is difficult to control the composition and film thickness. (c) Forming a film over a large area requires large equipment and requires a huge investment in equipment. Due to these disadvantages, it is difficult to provide inexpensive products as described above. As a means to solve such economical disadvantages, the present inventors have discovered a means to form a high refractive index dielectric thin film layer at low cost by a chemical coating method, and have already filed an application for the method. However, the laminated film consisting of a silver thin film layer covered with a transparent refractive index dielectric thin film layer formed by such a method tends to deteriorate in performance in a high temperature environment, and it is difficult to maintain its performance stably for a long period of time. is often the case. This deterioration is thought to be mainly due to the diffusion of silver toward the surface layer in the transparent high refractive index dielectric thin film layer. As a result of intensive research to obtain a laminate having excellent selective light transmittance without such drawbacks, the present inventors have found that by providing a protective coating containing a sulfur compound on a transparent conductive film, at least the metal layer can be removed. It has been discovered that a metal layer treated with a sulfur compound can be formed at the interface, and the above-mentioned drawbacks can be greatly improved, and the present invention has been achieved. That is, the present invention provides the following features: 1. On at least one side of the transparent molded substrate A, a transparent high refractive index dielectric thin film layer B, a metal thin film layer C made of silver or an alloy of silver, a transparent high refractive index dielectric thin film layer D, and In the production of a laminate in which protective layers E are sequentially laminated, the protective layer E provided on the transparent high refractive index dielectric thin film layer D is made of thiourea or thiourea having a sulfur atom active against silver. number of carbon atoms
A method for producing a laminate, characterized in that the laminate is formed by applying a protective coating liquid containing at least one sulfur compound selected from the group consisting of derivatives with 20 or less hydrocarbon groups. 2 The transparent high refractive index dielectric thin film layer B and/or D
The method for producing a laminate according to item 1 above, wherein is a titanium oxide thin film layer formed by hydrolysis of an alkyl titanate. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide an improved method for producing a laminate having selective light transmission by treatment with a sulfuric acid compound. Hereinafter, each matter of the present invention will be explained in detail. The transparent molded substrate A used in the present invention may be an organic type, an inorganic type, or a composite molded product thereof. Examples of organic molded products include molded products of polyethylene terephthalate resin, polyethylene naphthalate resin, polybutylene terephthalate resin, polycarbonate resin, acrylic resin, polyamide resin, and other resins. On the other hand, examples of inorganic molded products include molded products of glass such as soda glass and borosilicate glass, and metal oxides such as alumina, magnesia, zirconia, and silica. These molded products are molded into arbitrary shapes such as plate, sheet, film, and rod shapes. However, sheet-like, film-like, and plate-like products are preferable from the viewpoint of processability.
Among these, film-like materials are particularly preferred from the viewpoint of productivity. Further, a biaxially oriented polyethylene terephthalate film is preferred from the viewpoints of transparency, film strength, adhesion to the laminate, and the like. The transparent high refractive index dielectric thin film layer B or D constituting the laminate of the present invention is not particularly limited as long as it has the effect of preventing reflection in the metal layer, but it is 1.7 or more for visible light. , preferably has a refractive index of 1.8 or more, visible light transmittance 80%
Above, preferably 90% or more is effective. The film thickness is 50 to 1000 Å, preferably 100 to 100 Å.
It is 500Å. Examples of materials that meet these conditions include thin film layers of titanium oxide, zirconium oxide, bismuth oxide, zinc sulfide, tin oxide, indium oxide, and the like. These thin film layers can be provided by methods such as sputtering, vacuum deposition, ion plating, and wet coating. Particularly, the present invention exhibits its effects when a titanium oxide thin film with excellent optical properties is used as the transparent high refractive index dielectric thin film B or D, and in particular when it is made of alkyl titanate. This is the case when a titanium oxide thin film layer is used. A titanium oxide thin film layer formed from an alkyl titanate has good adhesion to an organic substrate and is preferable from this point of view as well. Examples of alkyl titanates include tetrabutyl titanate, tetraethyl titanate, tetrapropyl titanate, diisopropoxy titanium, bisacetylacetonate, etc.
In particular, tetrabutyl titanate and tetrapropyl titanate are preferably used. These alkyl titanates may be used as they are, or precondensed products such as dimers, tetramers, and decamers can also be preferably used. These alkyl titanates may also be stabilized with a compound such as acetylacetone before use. To create a titanium oxide thin film layer from alkyl titanate, either apply an organic solvent solution of alkyl titanate to the surface of the substrate, or use a general solution coating method such as dipping, spraying, spinner coating, or machine coating. be able to. The metal constituting the metal thin film layer C is silver or a silver alloy. Typical metals that can be contained in silver (Ag) include gold (Au), platinum (Pt), and copper (Cu), but other metals may be used as long as they do not impair the effects of the present invention or the performance of the laminate. It may contain the following ingredients. The thickness of the metal thin film is not particularly limited as long as it has the required characteristics as a transparent conductive film or a selective light transmission film, but in order to have infrared reflective ability or conductivity, it must be at least in a certain range. It is necessary to have continuity. In order to have a continuous structure, the film thickness must be approximately
The thickness is required to be 40 Å or more, and preferably 500 Å or less from the viewpoint of transparency to solar energy. The thinner the metal thin film, the better the visible light transmission, so to increase transparency it is best to have a film thickness of 250 Å or less, and to have sufficient infrared reflection ability, 50 Å.
The above film thickness is preferable. The metal thin film layer C can be formed by vacuum evaporation, sputtering, plasma spraying, vapor plating, chemical plating, or a combination thereof. Among these methods, a method suitable for the substrate may be used. Further, the sulfur compound used in the present invention is a compound having a sulfur atom that is active toward silver, and includes thiourea and its derivatives. Examples of thiourea derivatives include those in which the hydrogen atom of an amino group is substituted with a hydrocarbon group, for example, a hydrocarbon group having 20 or less carbon atoms, such as allylthiourea, N-
Benzylthiourea, N-methylthiourea, N.
N'-dimethylthiourea, N-ethylthiourea,
N・N′-diethylthiourea, N-butylthiourea, N-phenylthiourea, N・N′-diphenylthiourea and N-ethylidenethiourea, N・
Examples include N'-cyclohexylthiourea and N-cyclohexylthiourea. In the present invention, the protective layer E is formed by applying a protective coating liquid containing the sulfur compound onto the transparent refractive index layer D. Such a protective coating agent only needs to be transparent, inert, and compatible with the sulfur compound. Suitable examples include acrylic resin, polystyrene resin, polyvinyl formal, polyvinyl butyral, polyvinyl chloride, vinyl resins such as polyvinyl chloride monoacetate copolymer, polyurethane, epoxy, alkyd, unsaturated polyester, and silicone. Examples include resin. A more specific explanation of the present invention will be given in the following examples. In the examples, unless otherwise specified, the light transmittance is a value at a wavelength of 500 nm. The infrared reflectance was measured by attaching a reflectance measurement device to a Hitachi EPI-type infrared spectrometer and measuring the reflectance of a slide glass with sufficiently thick silver (approximately 3000 Å) vacuum-deposited.
Measured as 100%. Examples 1 to 4 A biaxially stretched polyethylene terephthalate film with a light transmittance of 86% and a thickness of 50μ has a thickness of 300Å as the first layer.
A layer of titanium oxide, a silver layer with a thickness of 160 Å as a second layer, and a titanium oxide layer with a thickness of 300 Å as a third layer are sequentially laminated on the film to form a laminate having transparent conductivity and selective light transmittance. Ta. The first and third titanium oxide thin film layers each contain 1 part of tetramer of tetrabutyl titanate, 1 part of acetylacetone, and 26 parts of isopropyl alcohol.
Apply a solution consisting of
Heat for 3 minutes and set aside. The silver layer was provided by vacuum deposition using a resistance heating method. The laminate composed of polyethylene terephthalate film/titanium oxide layer/Ag layer/titanium oxide layer produced in this manner will be hereinafter referred to as laminate A. A solution of 1 part of polyacrylic resin (Dianal LR574, Mitsubishi Rayon Co., Ltd.) mixed with 1 part of methyl isobutyl ketone and a predetermined proportion of 1,3-diphenyl-2-thiourea was added onto this laminate. , 2μ was applied using a bar coater and dried at 120°C for 3 minutes. The thus obtained laminate was subjected to a heat resistance test using a hot air dryer at 90°C, and changes in heat resistance were tracked by changes in infrared reflectance, and the time required for the reflectance to drop to 85% or less of the initial value was measured. was determined as the deterioration time. For reference, the results without addition are also shown. The results are shown in Table-1. The amount added herein means the weight fraction (%) of 1,3-diphenyl-2-thiourea based on the solid content of the polyacrylic resin.
【表】
実施例 5、6
1・3−ジフエニル−2−チオ尿素のかわりに
1−フエニル−2チオ尿素、メチルチオ尿素を
LR574樹脂固形分に対し5wt%の割合で添加し、
積層体○イ上に2μコーテイングし同様に90℃耐熱
試験を実施した。[Table] Examples 5 and 6 1-phenyl-2thiourea and methylthiourea were used instead of 1,3-diphenyl-2-thiourea.
Added at a ratio of 5wt% to the solid content of LR574 resin,
A 2μ coating was applied on the laminate ○I, and a 90°C heat resistance test was similarly conducted.
【表】
実施例 7
LR574のかわりに水溶性アクリルエマルジヨン
(アサヒペン株、水性ニス)を用い、チオ尿素を
アクリル樹脂固形分に対し、5%の割合で添加
し、積層体○イ上に2μコーテイングして、同様に
90℃耐熱促進試験を実施した。その結果、劣化時
間は、400時間であつた。
実施例 8
積層体○イにおいて、銀層のかわりにAg−Au合
金(Au5重量%)をスパツタリングで160Å設
け、その上に実施例4と同様に、LR574に対し5
%の割合で1・3−ジフエニル−2−チオ尿素を
添加し、2μコーテイングして90℃の耐熱試験を
実施した。
その劣化時間は2300時間であつた。[Table] Example 7 Using water-soluble acrylic emulsion (Asahipen Co., Ltd., water-based varnish) instead of LR574, thiourea was added at a ratio of 5% to the solid content of the acrylic resin, and 2μ Coating and the same
A 90°C heat resistance accelerated test was conducted. As a result, the deterioration time was 400 hours. Example 8 In the laminate ○A, a Ag-Au alloy (5% by weight of Au) was sputtered to 160 Å instead of the silver layer, and in the same manner as in Example 4, 5% of LR574 was applied.
% of 1,3-diphenyl-2-thiourea was added, a 2μ coating was applied, and a heat resistance test at 90°C was conducted. The deterioration time was 2300 hours.
Claims (1)
高屈折率誘電体薄膜層B、銀又は銀の合金からな
る金属薄膜層C、透明高屈折率誘電体薄膜層D及
び保護層Eが順次積層されてなる積層体の製造に
於て、透明高屈折率誘電体薄膜層D上に設けられ
る保護層Eが、銀に対して活性な硫黄原子を有す
るチオ尿素、チオ尿素の炭素原子数20個以下の炭
化水素基による誘電体からなる群から選ばれた少
くとも1種の硫黄化合物を含む保護コーテイング
液を塗布して形成されることを特徴とする積層体
の製造方法。 2 該透明高屈折率誘電体薄膜層B及び/又はD
がアルキルチタネートの加水分解により形成され
た酸化チタン薄膜層である特許請求の範囲第1項
記載の積層体の製造方法。[Claims] 1. On at least one side of a transparent molded substrate A, a transparent high refractive index dielectric thin film layer B, a metal thin film layer C made of silver or an alloy of silver, and a transparent high refractive index dielectric thin film layer D In the production of a laminate in which the protective layer E and the protective layer E are sequentially laminated, the protective layer E provided on the transparent high refractive index dielectric thin film layer D is made of thiourea, thiourea and thiourea having a sulfur atom which is active against silver. Production of a laminate, characterized in that it is formed by applying a protective coating liquid containing at least one sulfur compound selected from the group consisting of dielectrics made of hydrocarbon groups of urea having 20 or less carbon atoms. Method. 2 The transparent high refractive index dielectric thin film layer B and/or D
2. The method for producing a laminate according to claim 1, wherein said layer is a titanium oxide thin film layer formed by hydrolysis of an alkyl titanate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11598678A JPS5542814A (en) | 1978-09-22 | 1978-09-22 | Preparation of laminate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11598678A JPS5542814A (en) | 1978-09-22 | 1978-09-22 | Preparation of laminate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5542814A JPS5542814A (en) | 1980-03-26 |
| JPS6159903B2 true JPS6159903B2 (en) | 1986-12-18 |
Family
ID=14676037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11598678A Granted JPS5542814A (en) | 1978-09-22 | 1978-09-22 | Preparation of laminate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5542814A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5831950A (en) * | 1981-08-21 | 1983-02-24 | House Food Ind Co Ltd | Production of raised food for snack |
| DE3241516A1 (en) * | 1982-11-10 | 1984-05-10 | Robert Bosch Gmbh, 7000 Stuttgart | Multilayer system for thermal insulation application |
-
1978
- 1978-09-22 JP JP11598678A patent/JPS5542814A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5542814A (en) | 1980-03-26 |
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