JPS6154597B2 - - Google Patents
Info
- Publication number
- JPS6154597B2 JPS6154597B2 JP57039336A JP3933682A JPS6154597B2 JP S6154597 B2 JPS6154597 B2 JP S6154597B2 JP 57039336 A JP57039336 A JP 57039336A JP 3933682 A JP3933682 A JP 3933682A JP S6154597 B2 JPS6154597 B2 JP S6154597B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- workpiece
- monitoring
- evaporation source
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 34
- 230000008020 evaporation Effects 0.000 claims description 29
- 238000001704 evaporation Methods 0.000 claims description 29
- 238000012544 monitoring process Methods 0.000 claims description 22
- 239000010408 film Substances 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- 238000012806 monitoring device Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
Description
【発明の詳細な説明】
本発明は被加工物上に複数の蒸発源からの蒸発
物質を多層の薄膜状に形成する多層薄膜形成装置
における膜厚監視装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a film thickness monitoring device in a multilayer thin film forming apparatus that forms a multilayer thin film of evaporated substances from a plurality of evaporation sources on a workpiece.
従来この種装置として第1図及び第2図示のよ
うに被加工物aを真空処理室b内の複数の蒸発源
c上を移動させてこれに第3図示のような多層の
薄膜d,dを形成すると共に、該被加工物aの一
部eに、該被加工物aと各蒸発源cとの間に介在
させた各蒸発源毎に段階的に遮蔽幅が減少する遮
板fの開口部gを介して監視用の薄膜hを形成
し、各段階iから新たに露出する薄膜hを投受光
器j,jを用いて測定することにより膜厚を監視
する式のものは知られている(特公昭53−40189
号)。而してこの式のものでは投受光器j,jの
設置個所は各蒸発源cの直後に制限されるので比
較的設置が困難であると共に各投受光器j,jの
投受光面が蒸発物質により曇り勝ちで正確な測定
を行なえない不都合があり、多数の投光器j,j
を設置するのを要して装置が高価になるを免れな
い。 Conventionally, in this type of apparatus, a workpiece a is moved over a plurality of evaporation sources c in a vacuum processing chamber b as shown in FIGS. At the same time, a shielding plate f whose shielding width gradually decreases for each evaporation source interposed between the workpiece a and each evaporation source c is formed on a part e of the workpiece a. There is no known method in which a thin film h for monitoring is formed through an opening g, and the film thickness is monitored by measuring the newly exposed thin film h from each stage i using light emitters and receivers j. (Tokuko Showa 53-40189)
issue). However, in this type, the installation location of the light emitters and receivers j and j is limited to immediately after each evaporation source c, so installation is relatively difficult, and the light emitting and receiving surfaces of the light emitters and receivers j and j are evaporated. This has the disadvantage that accurate measurements cannot be taken because it tends to fog up depending on the substance, and a large number of projectors j, j
This inevitably increases the cost of the equipment.
本発明はこうした不都合を解消することをその
目的としたもので、被加工物を真空処理室内の複
数の蒸発源上を移動させてこれに多層に薄膜を形
成すると共に該被加工物と一体にこれと各蒸発源
との間に介在させた遮板の開口部を介して監視用
の薄膜を形成し、該監視用薄膜を投受光器間の光
により測定して多層の膜厚を監視する式のものに
於て、該遮板の開口部を各蒸発源に対向した独立
した複数個の孔形に構成し、各開口部を該被加工
物の移動方向の側方に夫々分散配置したことを特
徴とする。 The purpose of the present invention is to eliminate these inconveniences by moving a workpiece over multiple evaporation sources in a vacuum processing chamber, forming a multilayer thin film thereon, and forming a thin film integrally with the workpiece. A monitoring thin film is formed through the opening of the shield plate interposed between this and each evaporation source, and the monitoring thin film is measured by light between the light emitter and receiver to monitor the multilayer film thickness. In the type, the openings of the shielding plate were formed into a plurality of independent holes facing each evaporation source, and the openings were distributed on the sides in the direction of movement of the workpiece. It is characterized by
本発明装置の実施の1例を別紙図面につき説明
するに、第4図に於て1は真空処理室、2は該処
理室1内を一方のロール3aから解かれ他方のロ
ール3bに巻取られるべく移動するポリエステル
フイルムその他の被加工物、4は該真空処理室1
内の下方に該被加工物2と対向させてその移動方
向に配置した複数個の幅方向に長手の蒸発源を示
し、各蒸発源4から蒸発する物質がその上方を移
動する被加工物2の表面に順次附着して多層の薄
膜5が形成される。また該被加工物2と各蒸発源
4との間には開口部6を備えた遮板7が介在さ
れ、該開口部6を介して被加工物2の例えば1側
に予め用意した監視帯域2aに監視用の薄膜8が
形成される。該監視用の薄膜8は投光器9aと受
光器9bとの1対からなる投受光器9によりその
厚さが監視されるもので、投光器9aからの該薄
膜8の透過光量或は反射光量をアンプ10、記録
装置11に連結された受光器9bに於て測定し、
該監視用薄膜8の膜厚の異常が測定されると例え
ば蒸発源4の蒸発量を制御して予定の膜厚が得ら
れるように制御される。 An example of the implementation of the apparatus of the present invention will be explained with reference to the attached drawings. In FIG. 4, 1 is a vacuum processing chamber, and 2 is a section in which the inside of the processing chamber 1 is unwound from one roll 3a and wound onto the other roll 3b. Polyester film and other workpieces that move as much as possible; 4 refers to the vacuum processing chamber 1;
A plurality of evaporation sources elongated in the width direction are shown in the lower part of the workpiece 2, facing the workpiece 2 and disposed in its movement direction, and the material evaporated from each evaporation source 4 moves above the workpiece 2. A multilayer thin film 5 is formed by being sequentially deposited on the surface. Further, a shielding plate 7 having an opening 6 is interposed between the workpiece 2 and each evaporation source 4, and a monitoring zone prepared in advance on, for example, one side of the workpiece 2 is provided through the opening 6. A monitoring thin film 8 is formed on 2a. The thickness of the monitoring thin film 8 is monitored by a light emitter/receiver 9 consisting of a pair of light emitter 9a and light receiver 9b, and the amount of light transmitted or reflected from the thin film 8 from the light emitter 9a is amplified. 10. Measured with a light receiver 9b connected to the recording device 11,
When an abnormality in the thickness of the monitoring thin film 8 is measured, for example, the amount of evaporation from the evaporation source 4 is controlled to obtain a predetermined film thickness.
以上の構成は従来のものと特に変わりがないが
本発明のものに於ては遮板7の開口部6を第5図
に明らかなように各蒸発源4に対向した独立した
複数個の孔形6aに構成し、各蒸発源4からの蒸
発物質の一部が該孔形6aを介してその上方の被
加工物2の監視帯域2aに監視用薄膜8として附
着するようにし、さらに各開口部6は該被加工物
2の移動方向の側方に夫々分散配置し、各開口部
6を介して該監視帯域2aに附着する監視用薄膜
8は第5図示のように各蒸発源4毎に区分された
帯状に形成されるようにした。各薄膜5,8の膜
厚は各蒸発源4を過ぎた巻取ロール3bの前方に
設けた複数組の投受光器9間の反射光量の測定に
より測定されるが、各投光器9aを被加工物2の
背後に設けて第4図点線示の如く光線を当て透過
光量を測定するようにしてもよい。また該投受光
器9を構成する投光器9aと受光器9bを第6図
示のように被加工物2に沿つて走行自在のミラー
12a,12bに対向させ、両ミラー12a,1
2bを走行させると光軸13が該被加工物2の前
方に傾斜固定して設けた長手のミラー14a,1
4bにより反射されて被加工物2の幅方向に移動
し、各薄膜5,8の膜厚が1組の投受光器9によ
り測定されるように構成することも出来る。各開
口部6の孔形6aは第7図示のように千鳥形に配
置形成することも可能であり、第8図及び第9図
示のように三角形に形成してもよく、また第10
図示の如く各開口部6の長さを変化させてもよ
い。尚第8図示のように開口部6を配置すること
によつて奇数番目の蒸発源による薄膜と偶数番目
の蒸発源による薄膜を監視帯域2aの1側と他側
とに区分して形成出来る。その作動を第4図及び
第5図示の実施例について説明するに、ロール3
a,3bを回動して被加工物2を図面右方に移動
させると下方の各蒸発源4からのZnS,MgF2等
の蒸発物質が順次附着し、該被加工物2の下面に
多層の薄膜5が形成される。これと同時に監視帯
域2aには孔形の開口部6を介して各蒸発源4毎
の単層の帯状の監視用薄膜8が形成され、各蒸発
源4を過ぎてロール3bに該被加工物2が巻取ら
れる前に投受光器9により各薄膜8の膜厚が測定
される。 The above configuration is not particularly different from the conventional one, but in the present invention, the opening 6 of the shield plate 7 is formed into a plurality of independent holes facing each evaporation source 4, as shown in FIG. A part of the evaporated material from each evaporation source 4 is deposited as a monitoring thin film 8 on the monitoring zone 2a of the workpiece 2 above the hole 6a through the hole 6a, and The monitoring thin films 8 attached to the monitoring zone 2a through the openings 6 are arranged separately on the sides of the moving direction of the workpiece 2, and the monitoring thin films 8 are attached to the monitoring zone 2a for each evaporation source 4 as shown in FIG. It is now formed into a band-like shape divided into 2 sections. The thickness of each thin film 5, 8 is measured by measuring the amount of reflected light between multiple sets of light emitters and receivers 9 provided in front of the take-up roll 3b past each evaporation source 4. It may be provided behind the object 2 and the amount of transmitted light can be measured by applying a light beam as shown by the dotted line in FIG. Further, the light emitter 9a and the light receiver 9b constituting the light emitter/receiver 9 are arranged to face mirrors 12a, 12b which can freely travel along the workpiece 2 as shown in FIG.
When the workpiece 2b is run, the optical axis 13 is tilted and fixed in front of the workpiece 2.
4b and moves in the width direction of the workpiece 2, and the thickness of each of the thin films 5 and 8 can be measured by a pair of light emitter/receiver 9. The hole shapes 6a of each opening 6 can be arranged in a staggered manner as shown in FIG. 7, or triangular as shown in FIGS. 8 and 9.
The length of each opening 6 may be changed as shown in the figure. By arranging the openings 6 as shown in FIG. 8, thin films formed by odd-numbered evaporation sources and thin films formed by even-numbered evaporation sources can be formed separately on one side and the other side of the monitoring zone 2a. To explain its operation with reference to the embodiment shown in FIGS. 4 and 5, the roll 3
When a and 3b are rotated to move the workpiece 2 to the right in the drawing, evaporated substances such as ZnS and MgF 2 from the lower evaporation sources 4 are deposited one after another, forming a multilayer on the lower surface of the workpiece 2. A thin film 5 is formed. At the same time, a single-layer belt-shaped monitoring thin film 8 for each evaporation source 4 is formed in the monitoring zone 2a through the hole-shaped opening 6, and the workpiece passes past each evaporation source 4 and is deposited on the roll 3b. The film thickness of each thin film 8 is measured by the light emitter/receiver 9 before the thin film 2 is wound up.
以上のように本発明によるときは遮板に各蒸発
源に対向させて独立した孔形の開口部を形成し、
各開孔部を側方に分散配置したので、被加工物の
監視帯域に各蒸発源毎の単層の監視用薄膜を形成
させ得、これら単層の薄膜の膜厚は投受光器によ
り比較的正確に測定出来、監視精度が多層の薄膜
の全体を測定する従来のものよりも向上し、その
測定は各蒸発源を過ぎた個所に於て行い得るので
投受光器の設置も容易であり、投受光面が蒸発物
質により曇り難くなる等の効果がある。 As described above, according to the present invention, independent hole-shaped openings are formed in the shielding plate facing each evaporation source,
Since the apertures are distributed laterally, a single layer of monitoring thin film can be formed for each evaporation source in the monitoring zone of the workpiece, and the thickness of these single layers can be compared using a light emitter and receiver. The monitoring accuracy is improved compared to conventional methods that measure the entire multi-layered thin film, and the measurement can be performed past each evaporation source, making it easy to install light emitters and receivers. This has the effect that the light emitting and receiving surfaces are less likely to become cloudy due to evaporated substances.
第1図は従来例の截断側面図、第2図はその
−線截断面図、第3図は多層の薄膜の拡大断面
図、第4図は本発明装置の1例の截断側面図、第
5図はその−線截断面図、第6図は投受光器
の測定状態の1例の線図、第7図乃至第10図は
開口部の変形例の線図である。
1……真空処理室、2……被加工物、4……蒸
発源、5……多層の薄膜、6……開口部、7……
遮板、8……監視用の薄膜、9……投受光器、6
a……孔形。
FIG. 1 is a cross-sectional side view of a conventional example, FIG. 2 is a cross-sectional view taken along the line - FIG. 3 is an enlarged cross-sectional view of a multilayer thin film, and FIG. FIG. 5 is a cross-sectional view taken along the - line, FIG. 6 is a diagram showing an example of the measuring state of the light emitter/receiver, and FIGS. 7 to 10 are diagrams showing modified examples of the aperture. 1... Vacuum processing chamber, 2... Workpiece, 4... Evaporation source, 5... Multilayer thin film, 6... Opening, 7...
Shielding plate, 8... Thin film for monitoring, 9... Light emitter/receiver, 6
a... Hole shape.
Claims (1)
移動させてこれに多層に薄膜を形成すると共に該
被加工物と一体にこれと各蒸発源との間に介在さ
せた遮板の開口部を介して監視用の薄膜を形成
し、該監視用薄膜を投受光器間の光により測定し
て多層の薄膜の膜厚を監視する式のものに於て、
該遮板の開口部を各蒸発源に対向した独立した複
数個の孔形に構成し、各開口部を該被加工物の移
動方向の側方に夫々分散配置したことを特徴とす
る多層薄膜形成装置における膜厚監視装置。1. A workpiece is moved over a plurality of evaporation sources in a vacuum processing chamber to form a multilayer thin film thereon, and an opening in a shield is interposed between the workpiece and each evaporation source. In a type in which a thin film for monitoring is formed through a part and the thin film for monitoring is measured by light between a light emitter and a receiver to monitor the film thickness of a multilayer thin film,
A multilayer thin film characterized in that the openings of the shielding plate are configured in the form of a plurality of independent holes facing each evaporation source, and the openings are distributed on the sides in the moving direction of the workpiece. Film thickness monitoring device in forming equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57039336A JPS58158254A (en) | 1982-03-15 | 1982-03-15 | Monitor device for film thickness in multilayer thin-film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57039336A JPS58158254A (en) | 1982-03-15 | 1982-03-15 | Monitor device for film thickness in multilayer thin-film forming device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58158254A JPS58158254A (en) | 1983-09-20 |
| JPS6154597B2 true JPS6154597B2 (en) | 1986-11-22 |
Family
ID=12550246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57039336A Granted JPS58158254A (en) | 1982-03-15 | 1982-03-15 | Monitor device for film thickness in multilayer thin-film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58158254A (en) |
-
1982
- 1982-03-15 JP JP57039336A patent/JPS58158254A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58158254A (en) | 1983-09-20 |
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