JPS6214225B2 - - Google Patents
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- Publication number
- JPS6214225B2 JPS6214225B2 JP59072957A JP7295784A JPS6214225B2 JP S6214225 B2 JPS6214225 B2 JP S6214225B2 JP 59072957 A JP59072957 A JP 59072957A JP 7295784 A JP7295784 A JP 7295784A JP S6214225 B2 JPS6214225 B2 JP S6214225B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma generation
- gas
- plasma
- generation chamber
- wavelength
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Description
本発明は成膜方法に関するものである。
最近、電子複写機の感光ドラムや太陽電池など
に使用されるアモルフアスシリコンの薄膜の形成
方法が研究されている。また、他方では各種の絶
縁膜や保護膜の形成にも蒸着方法が利用され、用
途によつては種々の蒸着方法が提案されている
が、このなかでも光化学反応を利用した光化学蒸
着ないしは堆積方法は被膜形成速度が著しく早
く、大面積部にも均一な被膜を形成できるなどの
利点を有し、最近特に注目を集めている。
従来の光化学反応を利用した化学蒸着ないしは
堆積方法は、紫外線をよく透過する窓を有する容
器内に基板を配置し、光反応用ガスを流すととも
に、容器外から、紫外線光源で当該ガスを光化学
反応せしめ、その反応生成物を基板に蒸着や堆積
せしめるものである。
ところで、紫外線光源として低圧水銀ランプが
使用されることが多いが、このランプを点灯する
と、主として波長が254nmの紫外線が外部に放出
され、従として波長が185nmの紫外線が放出さ
れ、他の波長のものはわずかである。一方、アモ
ルフアスシリコンを生成するための光反応性ガス
として、安価で手軽に入手可能なSiH4を使用す
るとき、これに波長が147nmのように160nm以下
の紫外線が照射されるとよく分解して反応が進行
するが、254nmや185nmの紫外線を照射しても反
応が十分に進行しない。従つて、低圧水銀ランプ
を紫外線光源として使用するときは、水銀を添加
して水銀増感反応によつてSiH4を迅速に分解さ
せている。しかし、水銀は有害物質であり、その
取扱いや廃棄処理が困難なため、使用しないこと
が望ましいが、水銀増感反応によらずに254nmや
185nmの紫外線で迅速に分解させるには、光反応
性ガスとして高価で入手困難なSi2H6やSi3H8を使
用しなければならない。このため、147nmなどの
160nm以下の紫外線を発生する紫外線光源として
プラズマが考えられる。しかし、XeガスやKrガ
スをマイクロ波で励起すると、147nmや124nmの
紫外線は発生するが、パワーが入りにくく、発生
量が少なくて発生効率が低い問題点があつた。
そこで本発明は、160nm以下の紫外線が効率よ
く発生して、水銀を使用することなく、安価で手
軽に入手できるSiH4ガスを迅速に分解させるこ
とが可能な成膜方法を提供することを目的とす
る。そしてその構成は、プラズマ生成室と光化学
反応室とを、LiFやMgF2のような波長が160nm
以下の光を通す透過窓によつて区画し、該プラズ
マ生成室にはプラズマ生成用ガスの給排機構と、
磁力線発生機構と、この磁力線の方向に直角にマ
イクロ波を導く導波管とを設け、その内部に電子
サイクロトロン共鳴加熱（以下ECRと云う）に
よりプラズマをとじ込め、該光化学生成室に光化
学反応性ガスを供給し、その内部に配置された被
処理物である基板上に前記透過窓を通してプラズ
マより発生した波長が160nm以下の紫外線を照射
することを特徴とする。
以下に図面に基いて本発明の実施例を具体的に
説明する。
図面は実施例に使用される装置を示すが、光化
学反応室１とプラズマ生成室２とは円筒状の容器
であつて、両者は透過窓３で区画されている。こ
の透過窓３はLiFやMgF2のように少なくとも波
長が160nm以下の紫外線が透過する材料からでき
ており、プラズマ生成室２内で発生した紫外線は
これを透過して下方の光化学反応室１内に照射さ
れる。光化学反応室１には光反応性ガスの導入孔
１１と、減圧装置に接続される排気孔１２が設け
られて、この両者でガス給排機構を構成してい
る。導入孔１１からはキヤリアガスのアルゴン、
分解蒸着用ガスのSiH4からなる混合ガスが光化
学反応室１内に供給されるが、複数本の導入孔１
１を設けて各ガスを個別に導入し、光化学反応室
１内で混合するようにしてもよい。そして、この
導入孔１１には温度調節器を設け、各ガスを最適
温度に調節して光化学反応を増進させるのが良
い。光化学反応室１の内部中央には石英ガラス製
の基板支持台１３が上下動可能に配設されてい
る。この基板支持台１３には図示略の温度調節器
が取付けられており、これに支持される被処理物
である基板４は外径が160mmのアルミナ板であつ
て、約150℃に加熱されている。なお、この基板
支持台１３をターンテーブル状に回転可能とした
り、光化学反応室１内を移動可能とし、運搬機構
で基板４を出し入れして多数の基板４を効率良く
処理できるようにすることも可能である。
次に、プラズマ生成室２の上面にはXeガスや
Krガスのプラズマ生成ガスの導入孔２１と排気
孔２２が設けられており、この両者でプラズマ生
成ガスの給排機構を構成している。プラズマ生成
室２の外周の上部と下部には電磁コイル５，５が
配設されており、プラズマ生成室２内に上下方向
にミラー磁場が形成される。なお、電磁コイル５
の代りに永久磁石を配設してもよい。そして、プ
ラズマ生成室２の周壁には導波管６が接続されて
おり、図示略のマグネトロンなどの発振管から発
生したマイクロ波が整合された後に導波管６より
磁力線に直角に導入される。ミラー型の磁場配位
では、共鳴帯はプラズマ生成室２内の一部にしか
存在せず、ミラー磁場に捕捉された電子は往復運
動をしながら共鳴帯を繰り返し通過するが、この
通過に際して、粒子はマイクロ波電場からエネル
ギーを受け取つて加熱される。これは例えば「実
験物理学講座30、プラズマ・核融合」（共立出版
株式会社）の第548頁以下に説明されているよう
に、ECRとして知られているが、これによつて
加熱された粒子はプラズマ状態となつてプラズマ
生成室２内にとじ込められて紫外線が発生する。
紫外線の波長はプラズマ生成用ガスの種類によつ
て異り、例えば、Xeガスでは147nm、Krガスで
は124nmの波長が主として発生するが、160nm以
下の波長が発生するガス種が選ばれる。又、プラ
ズマ生成室２の回りには、冷却用の水冷パイプ
（図示略）が取付けられている。そして、プラズ
マ生成室２と光化学反応室１を中空の窓材で区画
し、その窓材の内部を真空にしたり、ヘリウムや
アルゴンなどのガスをフローさせるようにしても
よい。
しかして上記構成の装置において、光化学反応
室１内が減圧され、導入孔１１より５mmHgのア
ルゴンと３mmHgのSiH4が供給される。もつとも
光化学反応室１内は必ずしも減圧する必要はな
い。そして、プラズマ生成室２内には導入孔２１
より10-4〜10-3mmHgのXeガス供給され、電磁コ
イル５に通電されて約880ガウスの磁場が配位さ
れる。更にマグネトロンによつて周波数が
2.45GHzのマイクロ波が導波管６より導入され
る。これによつて前述の通りECRによつて加熱
され、プラズマがとじ込められる。そして、主と
して147nmの紫外線が発生し、透過窓３を透過し
て基板４に照射され、SiH4が光分解し、アモル
フアスの珪素が基板４上に蒸着又は堆積される。
次に、紫外線光源として、低圧水銀灯（比較例
１）およびECR加熱を行わない通常のマイクロ
波放電（比較例２）を使用したときの160nm以下
の短波長の紫外線の放射強度と成膜速度を調べ、
本実施例と比較した。その結果を第１表に示す。
The present invention relates to a film forming method. Recently, research has been conducted into methods for forming thin films of amorphous silicon used in photosensitive drums of electronic copying machines, solar cells, and the like. On the other hand, vapor deposition methods are also used to form various insulating films and protective films, and various vapor deposition methods have been proposed depending on the application, among which photochemical vapor deposition or deposition methods that utilize photochemical reactions are used. has been attracting particular attention recently because it has the advantage of being extremely fast in film formation and being able to form a uniform film even over a large area. In conventional chemical vapor deposition or deposition methods that utilize photochemical reactions, a substrate is placed inside a container with a window that allows ultraviolet rays to pass through, a photoreaction gas is flowed through the container, and the gas is then subjected to a photochemical reaction using an ultraviolet light source from outside the container. The reaction product is vapor-deposited or deposited on the substrate. By the way, a low-pressure mercury lamp is often used as an ultraviolet light source, and when this lamp is turned on, ultraviolet rays with a wavelength of 254 nm are mainly emitted to the outside, ultraviolet rays with a wavelength of 185 nm are emitted, and other wavelengths are emitted. There are only a few things. On the other hand, when SiH 4 , which is cheap and easily available, is used as a photoreactive gas to generate amorphous silicon, it decomposes well when it is irradiated with ultraviolet light with a wavelength of 160 nm or less, such as 147 nm. However, the reaction does not proceed sufficiently even when irradiated with 254 nm or 185 nm ultraviolet light. Therefore, when a low-pressure mercury lamp is used as an ultraviolet light source, mercury is added to rapidly decompose SiH 4 through a mercury sensitization reaction. However, since mercury is a hazardous substance and difficult to handle and dispose of, it is desirable not to use it.
To rapidly decompose with 185 nm ultraviolet light, expensive and difficult to obtain photoreactive gases such as Si 2 H 6 and Si 3 H 8 must be used. For this reason, 147nm etc.
Plasma can be considered as an ultraviolet light source that generates ultraviolet light of 160 nm or less. However, when Xe gas or Kr gas is excited with microwaves, ultraviolet rays of 147 nm or 124 nm are generated, but there are problems in that the power is difficult to apply, the amount generated is small, and the generation efficiency is low. Therefore, the purpose of the present invention is to provide a film formation method that efficiently generates ultraviolet light of 160 nm or less and can rapidly decompose SiH 4 gas, which is inexpensive and easily available, without using mercury. shall be. The configuration is such that the plasma generation chamber and the photochemical reaction chamber are separated using materials with a wavelength of 160 nm, such as LiF or MgF 2 .
The plasma generation chamber is divided by a transmission window that transmits the following light, and the plasma generation chamber is equipped with a plasma generation gas supply and discharge mechanism,
A magnetic field line generation mechanism and a waveguide that guides microwaves perpendicular to the direction of the magnetic field lines are provided, and plasma is trapped inside the mechanism by electron cyclotron resonance heating (hereinafter referred to as ECR), and photochemical reactivity is generated in the photochemical generation chamber. The method is characterized in that a gas is supplied, and ultraviolet rays having a wavelength of 160 nm or less generated by plasma are irradiated onto a substrate, which is an object to be processed, placed inside the gas through the transmission window. Embodiments of the present invention will be specifically described below based on the drawings. The drawing shows the apparatus used in the example, and the photochemical reaction chamber 1 and the plasma generation chamber 2 are cylindrical containers, and both are partitioned by a transmission window 3. This transmission window 3 is made of a material such as LiF or MgF 2 that transmits at least ultraviolet rays with a wavelength of 160 nm or less, and the ultraviolet rays generated in the plasma generation chamber 2 are transmitted through this and are transmitted into the photochemical reaction chamber 1 below. is irradiated. The photochemical reaction chamber 1 is provided with a photoreactive gas introduction hole 11 and an exhaust hole 12 connected to a pressure reducing device, both of which constitute a gas supply and exhaust mechanism. From the introduction hole 11, carrier gas argon,
A mixed gas consisting of SiH 4 as a decomposition vapor deposition gas is supplied into the photochemical reaction chamber 1.
1 may be provided and each gas may be introduced individually and mixed within the photochemical reaction chamber 1. It is preferable that a temperature controller is provided in the introduction hole 11 to adjust the temperature of each gas to the optimum temperature to promote the photochemical reaction. A substrate support stand 13 made of quartz glass is arranged in the center of the photochemical reaction chamber 1 so as to be movable up and down. A temperature controller (not shown) is attached to this substrate support stand 13, and the substrate 4, which is the object to be processed, supported by this is an alumina plate with an outer diameter of 160 mm, and is heated to about 150°C. There is. Note that this substrate support stand 13 can be made rotatable like a turntable, or made movable within the photochemical reaction chamber 1, so that a large number of substrates 4 can be efficiently processed by loading and unloading the substrates 4 with a transport mechanism. It is possible. Next, the upper surface of the plasma generation chamber 2 is filled with Xe gas and
An introduction hole 21 and an exhaust hole 22 for plasma generation gas such as Kr gas are provided, and both constitute a supply and discharge mechanism for the plasma generation gas. Electromagnetic coils 5 and 5 are disposed at the upper and lower portions of the outer periphery of the plasma generation chamber 2, and a mirror magnetic field is formed in the vertical direction within the plasma generation chamber 2. In addition, the electromagnetic coil 5
A permanent magnet may be provided instead. A waveguide 6 is connected to the peripheral wall of the plasma generation chamber 2, and the microwaves generated from an oscillation tube such as a magnetron (not shown) are aligned and then introduced through the waveguide 6 at right angles to the lines of magnetic force. . In the mirror-type magnetic field configuration, the resonance band exists only in a part of the plasma generation chamber 2, and the electrons captured by the mirror magnetic field repeatedly pass through the resonance band while making reciprocating movements, but during this passage, The particles receive energy from the microwave electric field and are heated. This is known as ECR, as explained in "Experimental Physics Course 30, Plasma/Nuclear Fusion" (Kyoritsu Publishing Co., Ltd.), from page 548 onwards. becomes a plasma and is confined within the plasma generation chamber 2, generating ultraviolet rays.
The wavelength of ultraviolet light varies depending on the type of plasma generation gas. For example, Xe gas mainly generates a wavelength of 147 nm, and Kr gas mainly generates a wavelength of 124 nm, but a gas type that generates a wavelength of 160 nm or less is selected. Further, a water cooling pipe (not shown) for cooling is attached around the plasma generation chamber 2. The plasma generation chamber 2 and the photochemical reaction chamber 1 may be partitioned by a hollow window material, and the interior of the window material may be evacuated or a gas such as helium or argon may be caused to flow therein. In the apparatus configured as described above, the pressure inside the photochemical reaction chamber 1 is reduced, and 5 mmHg of argon and 3 mmHg of SiH 4 are supplied from the introduction hole 11. Of course, it is not necessarily necessary to reduce the pressure inside the photochemical reaction chamber 1. There is an introduction hole 21 in the plasma generation chamber 2.
Xe gas of 10 -4 to 10 -3 mmHg is supplied, and the electromagnetic coil 5 is energized to create a magnetic field of approximately 880 Gauss. Furthermore, the frequency is increased by the magnetron.
A 2.45 GHz microwave is introduced through the waveguide 6. As a result, it is heated by the ECR as described above, and the plasma is confined. Then, ultraviolet rays of mainly 147 nm are generated, which are transmitted through the transmission window 3 and irradiated onto the substrate 4, so that SiH 4 is photodecomposed and amorphous silicon is vapor-deposited or deposited on the substrate 4. Next, we measured the radiation intensity and film formation rate of short-wavelength ultraviolet light of 160 nm or less when using a low-pressure mercury lamp (comparative example 1) and a normal microwave discharge without ECR heating (comparative example 2) as the ultraviolet light source. Investigate,
A comparison was made with this example. The results are shown in Table 1.
【表】
ここで、入力電力はいずれも500VAの一定値で
あり、光反応性ガスもSiH4が３mmHg、アルゴン
が５mmHgであつて本実施例と同一である。そし
て、透過窓３の材質は本実施例と比較例２とも
LiFであるが、比較例１では合成石英管の低圧水
銀灯を使用したので、透過窓３を設けておらず、
比較例２のプラズマ生成用ガスもXeであつて、
圧力も実施例と同一である。
これから理解できるように、本発明によれば、
プラズマ生成用ガスがECRによつて加熱されて
プラズマ状態となるために、パワーが非常に入り
やすく、効率よく短波長の紫外線が発生するの
で、少ないエネルギーによつて高速処理すること
ができる。更には磁場の分布を変えることによつ
て発光の位置を可変とできる利点を有する。そし
て、160nm以下の短波長の紫外線が効率よく発生
するので、安価で手軽に入手できるSiH4を水銀
増感作用によることなく迅速に光分解することが
できる。従つて、有害であつて取扱いの困難な水
銀や高価で入手が困難なSi2H6やSi3H8を使用する
必要がなく、安全であつて低コストで操業できる
成膜方法とすることができる。
以上説明したように本発明は、プラズマ生成用
ガスをECRによつてプラズマ状態とし、短波長
の紫外線を透過窓を通して基板上に照射するよう
にしたので、本発明に従えば、160nm以下の紫外
線が効率よく発生して、水銀を使用することな
く、SiH4ガスを迅速に分解させることが可能な
成膜方法を提供することができる。[Table] Here, the input power is a constant value of 500 VA in all cases, and the photoreactive gases are 3 mmHg for SiH 4 and 5 mmHg for argon, which are the same as in this example. The material of the transmission window 3 is both the present example and the comparative example 2.
However, in Comparative Example 1, a low-pressure mercury lamp with a synthetic quartz tube was used, so the transmission window 3 was not provided.
The plasma generation gas in Comparative Example 2 was also Xe,
The pressure was also the same as in the example. As can be seen, according to the invention:
Since the plasma generation gas is heated by ECR and becomes a plasma state, power can be applied very easily and short-wavelength ultraviolet rays can be efficiently generated, allowing high-speed processing with less energy. Furthermore, it has the advantage that the position of light emission can be varied by changing the distribution of the magnetic field. In addition, since ultraviolet light with a short wavelength of 160 nm or less is efficiently generated, cheap and easily available SiH 4 can be rapidly photodecomposed without mercury sensitization. Therefore, there is no need to use mercury, which is harmful and difficult to handle, or Si 2 H 6 or Si 3 H 8 , which are expensive and difficult to obtain, and the film formation method is safe and can be operated at low cost. I can do it. As explained above, in the present invention, the plasma generation gas is made into a plasma state by ECR, and the substrate is irradiated with short wavelength ultraviolet rays through the transmission window. It is possible to provide a film forming method that can efficiently generate SiH 4 gas and rapidly decompose SiH 4 gas without using mercury.
図面は本発明実施例に使用される装置の断面図
である。
１……光化学反応室、２……プラズマ生成室、
１１，２１……導入孔、１２，２２……排気孔、
１３……基板支持台、３……透過窓、４……基
板、５……電磁コイル、６……導波管。
The drawing is a cross-sectional view of an apparatus used in an embodiment of the present invention. 1...Photochemical reaction chamber, 2...Plasma generation chamber,
11, 21...Introduction hole, 12, 22...Exhaust hole,
13... Substrate support stand, 3... Transmission window, 4... Substrate, 5... Electromagnetic coil, 6... Waveguide.
Claims (1)
MgF2のような波長が160nm以下の光を通す透過
窓によつて区画し、該プラズマ生成室にはプラズ
マ生成用ガスの給排機構と、磁力線発生機構と、
この磁力線の方向に直角にマイクロ波を導く導波
管とを設け、その内部に電子サイクロトロン共鳴
加熱によりプラズマをとじ込め、該光化学生成室
に光化学反応性ガスを供給し、その内部に配置さ
れた被処理物である基板上に前記透過窓を通して
プラズマより発生した波長が160nm以下の紫外線
を照射することを特徴とする成膜方法。1 The plasma generation chamber and photochemical reaction chamber are connected using LiF or
The plasma generation chamber is divided by a transmission window that passes light with a wavelength of 160 nm or less, such as MgF 2 , and the plasma generation chamber includes a plasma generation gas supply and discharge mechanism, a magnetic field line generation mechanism,
A waveguide is provided that guides microwaves perpendicularly to the direction of the magnetic field lines, and a plasma is trapped inside the waveguide by electron cyclotron resonance heating, and a photochemically reactive gas is supplied to the photochemical generation chamber. A film forming method characterized by irradiating ultraviolet rays having a wavelength of 160 nm or less generated by plasma through the transmission window onto a substrate, which is an object to be processed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7295784A JPS60218474A (en) | 1984-04-13 | 1984-04-13 | Film forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7295784A JPS60218474A (en) | 1984-04-13 | 1984-04-13 | Film forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60218474A JPS60218474A (en) | 1985-11-01 |
| JPS6214225B2 true JPS6214225B2 (en) | 1987-04-01 |
Family
ID=13504367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7295784A Granted JPS60218474A (en) | 1984-04-13 | 1984-04-13 | Film forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60218474A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0635662B2 (en) * | 1985-09-19 | 1994-05-11 | 松下電器産業株式会社 | Plasma equipment |
| JPH0819527B2 (en) * | 1985-09-19 | 1996-02-28 | 松下電器産業株式会社 | Plasma equipment |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60202928A (en) * | 1984-03-28 | 1985-10-14 | Toshiba Corp | Optical pumping reaction device |
-
1984
- 1984-04-13 JP JP7295784A patent/JPS60218474A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60218474A (en) | 1985-11-01 |
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