JPS6226095B2 - - Google Patents
Info
- Publication number
- JPS6226095B2 JPS6226095B2 JP16593479A JP16593479A JPS6226095B2 JP S6226095 B2 JPS6226095 B2 JP S6226095B2 JP 16593479 A JP16593479 A JP 16593479A JP 16593479 A JP16593479 A JP 16593479A JP S6226095 B2 JPS6226095 B2 JP S6226095B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetic storage
- head
- memory
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003860 storage Methods 0.000 claims description 32
- 239000002253 acid Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 10
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 8
- 238000010304 firing Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 5
- 229910002092 carbon dioxide Inorganic materials 0.000 description 4
- 239000001569 carbon dioxide Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- 229910001096 P alloy Inorganic materials 0.000 description 3
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- IGOJDKCIHXGPTI-UHFFFAOYSA-N [P].[Co].[Ni] Chemical compound [P].[Co].[Ni] IGOJDKCIHXGPTI-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000011232 storage material Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Description
【発明の詳細な説明】
本発明は磁気デイスク装置または磁気ドラム装
置などの磁気的記憶装置に用いられる磁気記憶体
の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a magnetic storage body used in a magnetic storage device such as a magnetic disk device or a magnetic drum device.
一般に記録再生磁気ヘツド(以下ヘツドと呼
ぶ)と磁気記憶体とを構成部とする磁気記憶装置
の記録再生方法には次のような方法がある。すな
わち操作開始時にヘツドと磁気記憶体面とを接触
状態でセツトした後、前記磁気記憶体に所要の回
転を与えることにより前記ヘツドと前記磁気記憶
体面との間に空気層分の空間を作り、この状態で
記録再生をする方法である(コンタト・スター
ト・ストツプ方式。以下CSS方式と呼ぶ)。この
方法では操作終了時に磁気記憶体の回転が止ま
り、この時ヘツドと磁気記憶体面は操作開始時と
同様に接触摩擦状態にある。 In general, there are the following methods for recording and reproducing a magnetic storage device comprising a recording and reproducing magnetic head (hereinafter referred to as a head) and a magnetic storage body. That is, after the head and the magnetic storage surface are set in contact at the start of operation, a space corresponding to an air layer is created between the head and the magnetic storage surface by giving the magnetic storage the required rotation, and this This is a method of recording and reproducing data in the current state (contact start/stop method; hereinafter referred to as the CSS method). In this method, at the end of the operation, the magnetic storage body stops rotating, and at this time the head and the magnetic storage body surface are in a frictional state of contact, as at the beginning of the operation.
これらの接触摩擦状態におけるヘツドと磁気記
憶体の間に生じる摩擦力は、ヘツドおよび磁気記
憶体を摩耗させついにはヘツドおよび金属磁性薄
膜媒体に傷を生じさせることがある。また前記接
触摩擦状態においてヘツドのわずかな姿勢の変化
がヘツドにかかる荷重を不均一にさせヘツドおよ
び磁気記憶体表面に傷を作ることもある。 The frictional force generated between the head and the magnetic storage material under these contact friction conditions may wear out the head and the magnetic storage material, and may eventually cause scratches on the head and the metal magnetic thin film medium. Further, in the contact friction state, a slight change in the posture of the head may cause the load applied to the head to become uneven, causing scratches on the surface of the head and the magnetic storage body.
また更に記録更生中に突発的にヘツドが磁気記
憶体に接触しヘツドと磁気記憶体間に大きな摩擦
力が働き、ヘツドおよび磁気記憶体が破壊される
ことがしばしば起こる。この様なヘツドと磁気記
憶体との接触摩擦、接触摩耗および接触破壊から
ヘツドおよび磁気記憶体を保護するために磁気記
憶体の表面に保護被膜を被覆することが必要であ
る。 Furthermore, during recording retrieval, the head suddenly comes into contact with the magnetic storage, creating a large frictional force between the head and the magnetic storage, often resulting in destruction of the head and the magnetic storage. In order to protect the head and the magnetic memory from such contact friction, contact wear and contact breakage between the head and the magnetic memory, it is necessary to coat the surface of the magnetic memory with a protective coating.
従来より種々の保護膜が提案されているが、前
記接触摩擦、接触摩耗および接触破壊に対し有効
な保護膜として硬度が高くかつ量産性に優れたポ
リ珪酸が既に提案されている(特開昭52−20804
号)。 Various protective films have been proposed in the past, and polysilicic acid, which has high hardness and is easy to mass-produce, has already been proposed as a protective film that is effective against contact friction, contact wear, and contact fracture (Japanese Patent Application Laid-Open No. 52−20804
issue).
前記ポリ珪酸にレーザー光を照射し焼成するこ
とにより磁気記憶体の磁気特性および量産性を損
ねることなしに接触摩擦現象に対する信頼性を高
めることが出来るが、量産性および接触摩擦現象
に対する信頼性は、高ければ高い程望ましく常に
向上が望まれている。 By irradiating the polysilicic acid with laser light and firing it, it is possible to increase the reliability against contact friction phenomenon without impairing the magnetic properties and mass productivity of the magnetic memory, but the reliability against mass production and contact friction phenomenon is The higher the value, the more desirable it is, and improvement is always desired.
本発明の目的は磁気記憶体の磁気特性および接
触摩擦現象に対する信頼性を損ねることなしに量
産性をさらに高める磁気記憶体の製造方法を提供
することにある。 SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a magnetic memory that further improves mass productivity without impairing the magnetic properties of the magnetic memory and the reliability with respect to contact friction phenomena.
すなわち本発明の磁気記憶体の製造方法は、金
属磁性媒体の上に塗布したポリ珪酸にレーザー光
を多重反射させつつ照射して焼成することを特徴
としている。 That is, the method for manufacturing a magnetic memory according to the present invention is characterized in that polysilicate coated on a metal magnetic medium is irradiated with a laser beam while causing multiple reflections and fired.
次に図面を参照して本発明を詳細に説明する。
第1図は2枚の磁気記憶体の断面図で、これら磁
気記憶体の記憶面を互いに平行に向い合わせてそ
の間でレーザー光を多重反射させて焼成する方法
を表わす図である。 Next, the present invention will be explained in detail with reference to the drawings.
FIG. 1 is a cross-sectional view of two magnetic storage bodies, showing a method of firing by arranging the storage surfaces of these magnetic storage bodies parallel to each other and causing multiple reflections of laser light between them.
第2図は磁気記憶体の記憶面に反射鏡を平行に
向い合わせて、それらの間でレーザー光を多重反
射させて焼成する方法を表わす図である。 FIG. 2 is a diagram illustrating a method of firing by arranging reflective mirrors parallel to the storage surface of a magnetic memory and causing multiple reflections of laser light between them.
第1,2図において、磁気記憶体の基盤1とし
てアルミ合金が軽くて加工性が良く安価なことか
ら最も良く用いられるが、場合によつてはチタン
合金が用いられることもある。基盤表面は機械加
工により小さなうねり(円周方向で50μm以下お
よび半径方向で100μm以下)を有する面に仕上
げられる。 In FIGS. 1 and 2, aluminum alloy is most often used as the base 1 of the magnetic memory because it is light, easy to work with, and inexpensive, but titanium alloy may be used in some cases. The base surface is finished by machining into a surface with small undulations (50 μm or less in the circumferential direction and 100 μm or less in the radial direction).
次にこの基盤1の上に下地体2としてニツケル
―隣合金がめつきにより被覆され、この下地体2
の表面は機械的研磨により表面粗さ0.03μm
(Rmax)以下に鏡面仕上げされる。 Next, a nickel-based alloy is plated onto this base 1 as a base body 2, and this base body 2
The surface has a surface roughness of 0.03μm by mechanical polishing.
Mirror finish is achieved below (Rmax).
次にこの下地体2の鏡面研磨面上に金属磁性媒
体3としてコバルト―ニツケル―燐合金がめつき
により被覆されこの金属磁性媒体3の上に保護膜
4として特開昭52−20804号に示された様なポリ
珪酸が回転塗布法により被覆される。 Next, a cobalt-nickel-phosphorus alloy is coated on the mirror-polished surface of the base body 2 as a metal magnetic medium 3 by plating, and a protective film 4 is formed on the metal magnetic medium 3 as shown in Japanese Patent Laid-Open No. 52-20804. A polysilicic acid such as the one described above is coated by a spin coating method.
次にポリ珪酸を被覆した磁気記憶体の表面に波
長9μm〜11μmの炭酸ガスレーザー光を多重反
射により照射して上記ポリ珪酸膜を焼成する。 Next, the surface of the magnetic storage body coated with polysilicate is irradiated with carbon dioxide laser light having a wavelength of 9 μm to 11 μm by multiple reflections to bake the polysilicate film.
多重反射は第1図の様に、ポリ珪酸を被覆した
2枚の磁気記憶体の間で行なう方法と、第2図の
様に反射鏡と磁気記憶体の間で行なう方法がある
が、前者の場合は同時に磁気記憶体の2面を焼成
することが出来るが、ポリ珪酸によるレーザー光
の吸収減衰の為に焼成可能な反射回数は限られ
る。一方、後者の場合は、高反射率の反射鏡を用
いるため焼成可能な反射回数は増加するが、一度
に焼成出来る面は1面である。多重反射は第1図
の場合に数10回は可能であり、直径14インチ以上
の磁気記憶体に対しても十分適用することが出来
る。これは磁気記憶体における金属磁性媒体3の
反射率が高いことと、ポリ珪酸の膜厚が薄い
(0.1μm程度)ために1回の反射当りのレーザー
光の吸収減衰が少ない為である。すなわち多重反
射によるレーザー焼成法は金属磁性媒体の上にポ
リ珪酸が被覆された本発明の磁気記憶体において
十分な効果を示すことが出来る。 There are two methods for multiple reflection: one is between two magnetic storage bodies covered with polysilicic acid, as shown in Figure 1, and the other is between a reflecting mirror and a magnetic storage body, as shown in Figure 2. In this case, two sides of the magnetic memory can be fired at the same time, but the number of reflections that can be fired is limited due to attenuation of absorption of laser light by polysilicate. On the other hand, in the latter case, the number of reflections that can be fired increases because a high-reflectance reflecting mirror is used, but only one surface can be fired at a time. Multiple reflections can occur several dozen times in the case of FIG. 1, and can be sufficiently applied to magnetic storage bodies with a diameter of 14 inches or more. This is because the metal magnetic medium 3 in the magnetic memory has a high reflectance and the polysilicate film is thin (approximately 0.1 μm), so that the absorption attenuation of the laser beam per reflection is small. That is, the laser firing method using multiple reflections can be sufficiently effective in the magnetic memory of the present invention in which a metal magnetic medium is coated with polysilicic acid.
第1図、第2図いずれの場合も、磁気記憶体の
広い面積に互つてポリ珪酸の焼成を行なう場合に
は、磁気記憶体を面内方向で回転させるなど、焼
成位置を順次移動させるようにすればよい。 In both Figures 1 and 2, when firing polysilicic acid over a large area of the magnetic storage body, it is necessary to move the firing position sequentially, such as by rotating the magnetic storage body in the in-plane direction. Just do it.
次に実施例および比較例により本発明の磁気記
憶体の製造方法を詳細に説明する。 Next, the method for manufacturing the magnetic storage body of the present invention will be explained in detail with reference to Examples and Comparative Examples.
実施例 1
基盤1として旋盤加工および熱矯正によつて十
分小さなうねり(円周方向で50μm以下および半
径方向で10μm以下)をもつた面に仕上げられた
デイスク状アルミミニウム合金盤上に下地体2と
してニツケル―燐合金を約50μmの厚さにめつき
し、このニツケル―燐メツキ膜を表面粗さ0.02μ
m(Rmax)、厚さ30μmまで鏡面研磨仕上げし
た。次にこのニツケル―燐めつき膜の上に磁性媒
体3としてコバルト―ニツケル―燐合金を0.05μ
mの厚さにめつきした。このコバルト―ニルケル
―燐めつき膜の上にテトラヒドロキシシランの2
%n―ブチルアルコール溶液を0.1μmの厚さに
塗布、乾燥してポリ珪酸にし保護膜とした。Example 1 A base body 2 is placed on a disc-shaped aluminum alloy plate that has been finished with sufficiently small waviness (50 μm or less in the circumferential direction and 10 μm or less in the radial direction) by lathe processing and thermal straightening as the base 1. A nickel-phosphorus alloy is plated to a thickness of approximately 50μm, and this nickel-phosphorus plating film has a surface roughness of 0.02μm.
Mirror-polished to a thickness of 30 μm (Rmax). Next, on this nickel-phosphorus plating film, a cobalt-nickel-phosphorus alloy of 0.05 μm was applied as a magnetic medium 3.
It was plated to a thickness of m. On this cobalt-nylkel-phosphorus plating film, two layers of tetrahydroxysilane were applied.
% n-butyl alcohol solution was applied to a thickness of 0.1 μm and dried to form a polysilicic acid protective film.
次に1cmの間隔で記憶面(即ちポリ珪酸の被覆
面)を互いに平行に置いた2枚の直径14インチの
磁気記憶体の間に45度入射角で出力50MW、ビー
ム直径0.7cmのパルス発振炭酸ガスレーザーを入
射し、前記2枚の磁気記憶体を回転しつつ30回反
射させて焼成して磁気デイスクを作つた。但し、
炭酸ガスレーザーの発振周期は0.5Hzであり、パ
ルス時間は50+1秒であつた。 Next, a pulse oscillation with an output of 50 MW and a beam diameter of 0.7 cm was generated at a 45-degree incident angle between two 14-inch diameter magnetic memory bodies whose memory surfaces (i.e., polysilicate coated surfaces) were placed parallel to each other with a 1 cm spacing. A carbon dioxide gas laser was applied to the two magnetic storage bodies, which were rotated and reflected 30 times, and fired to produce a magnetic disk. however,
The oscillation period of the carbon dioxide laser was 0.5 Hz, and the pulse time was 50+1 seconds.
実施施 2
実施例1と同様にして、但し磁気記憶体と同じ
形の反射鏡をどちらか1枚の磁気記憶体と置き代
え、反射回数を60回にして磁気デイスクを作つ
た。Example 2 A magnetic disk was produced in the same manner as in Example 1, except that one of the magnetic storage bodies was replaced with a reflecting mirror having the same shape as the magnetic storage body, and the number of reflections was 60.
比較例
実施例1と同様にして、但し炭酸ガスレーザー
を単反射で照射して磁気デイスクを作つた。Comparative Example A magnetic disk was produced in the same manner as in Example 1, except that a carbon dioxide gas laser was irradiated by single reflection.
実施例1、2および比較例で示した磁気デイス
クについてレーザー照射による1面当りの焼成時
間は、比較例では30分を要したが実施例1、2で
は4分であつた。 Regarding the magnetic disks shown in Examples 1 and 2 and Comparative Examples, the firing time per surface by laser irradiation was 30 minutes in Comparative Examples, but 4 minutes in Examples 1 and 2.
なお、実施例1、2共磁気特性の変化は皆無で
あり、CSSの3万回繰り返しにおいても磁気記憶
体の表面には全く傷が生じなかつた。 In addition, there was no change in the magnetic properties in Examples 1 and 2, and even after repeating CSS 30,000 times, no scratches were generated on the surface of the magnetic memory.
以上のことから本発明の磁気記憶体の製造方法
によつて製造した磁気デイスクは優れた信頼性と
優れた量産性を有していることが分つた。 From the above, it was found that the magnetic disk manufactured by the method for manufacturing a magnetic storage body of the present invention has excellent reliability and excellent mass productivity.
第1図は一実施例を示す部分断面図、第2図は
他の実施例を示す部分断面図である。
図において、1は基盤、2は下地体、3は金属
磁性媒体、4は保護膜、5はレーザービーム、6
は反射鏡を表わす。
FIG. 1 is a partial sectional view showing one embodiment, and FIG. 2 is a partial sectional view showing another embodiment. In the figure, 1 is a base, 2 is a base body, 3 is a metal magnetic medium, 4 is a protective film, 5 is a laser beam, and 6
represents a reflector.
Claims (1)
被覆し、該媒体の上にポリ珪酸を被覆した後、該
ポリ珪酸にレーザー光を多重反射させつつ照射し
て焼成することを特徴とする磁気記憶体の製造方
法。 2 記憶面を互いに平行に向い合わせた2枚の磁
気記憶体の間でレーザー光を多重反射させる特許
請求の範囲第1項に記載の磁気記憶体の製造方
法。 3 磁気記憶体の記憶面に平行に反射鏡を向い合
わせ磁気記憶体と反射鏡の間でレーザー光を多重
反射させる特許請求の範囲第1項に記載の磁気記
憶体の製造方法。[Claims] 1. A metal magnetic medium is coated on a mirror-polished base body, polysilicic acid is coated on the medium, and then the polysilicic acid is irradiated with a laser beam with multiple reflections and fired. A method of manufacturing a magnetic memory body, characterized by: 2. The method of manufacturing a magnetic memory body according to claim 1, wherein laser light is multiple reflected between two magnetic memory bodies whose memory surfaces face each other in parallel. 3. The method of manufacturing a magnetic storage body according to claim 1, wherein a reflecting mirror is faced parallel to the storage surface of the magnetic storage body and the laser beam is multiple reflected between the magnetic storage body and the reflecting mirror.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16593479A JPS5690425A (en) | 1979-12-20 | 1979-12-20 | Production of magnetic storage material |
| US06/192,566 US4380558A (en) | 1979-10-02 | 1980-09-30 | Process for manufacturing a protective polysilicate layer of a record member by a laser beam and a magnetic record member suitably manufactured thereby |
| DE19803050525 DE3050525C2 (en) | 1979-10-02 | 1980-10-01 | Protective poly:silicate coating prodn. on magnetic recording material - by applying tetra:hydroxy-silane, precure and laser irradiation to complete cure |
| DE19803050791 DE3050791C2 (en) | 1979-10-02 | 1980-10-01 | Process for the simultaneous production of two magnetic recording media |
| DE3037168A DE3037168C2 (en) | 1979-10-02 | 1980-10-01 | Process for the production of a magnetic recording medium by means of laser radiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16593479A JPS5690425A (en) | 1979-12-20 | 1979-12-20 | Production of magnetic storage material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5690425A JPS5690425A (en) | 1981-07-22 |
| JPS6226095B2 true JPS6226095B2 (en) | 1987-06-06 |
Family
ID=15821785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16593479A Granted JPS5690425A (en) | 1979-10-02 | 1979-12-20 | Production of magnetic storage material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5690425A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2962854B2 (en) * | 1991-04-25 | 1999-10-12 | キヤノン株式会社 | Ink jet head cartridge and ink jet apparatus equipped with the cartridge |
| JPH0537713U (en) * | 1991-10-24 | 1993-05-21 | 村田機械株式会社 | Package type detector for transport system |
-
1979
- 1979-12-20 JP JP16593479A patent/JPS5690425A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5690425A (en) | 1981-07-22 |
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