JPS6216452B2 - - Google Patents
Info
- Publication number
- JPS6216452B2 JPS6216452B2 JP12762679A JP12762679A JPS6216452B2 JP S6216452 B2 JPS6216452 B2 JP S6216452B2 JP 12762679 A JP12762679 A JP 12762679A JP 12762679 A JP12762679 A JP 12762679A JP S6216452 B2 JPS6216452 B2 JP S6216452B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- head
- magnetic storage
- medium
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003860 storage Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 8
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 6
- 239000001569 carbon dioxide Substances 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 239000010408 film Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910001096 P alloy Inorganic materials 0.000 description 7
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 5
- IGOJDKCIHXGPTI-UHFFFAOYSA-N [P].[Co].[Ni] Chemical compound [P].[Co].[Ni] IGOJDKCIHXGPTI-UHFFFAOYSA-N 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000011232 storage material Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Description
【発明の詳細な説明】
本発明は磁気的記憶装置(磁気デイスク装置ま
たは磁気ドラム装置等)に用いられる磁気記憶体
の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a magnetic storage body used in a magnetic storage device (such as a magnetic disk device or a magnetic drum device).
一般に記録再生磁気ヘツド(以下ヘツドと呼
ぶ)と磁気記憶体とを構成部とする磁気記憶装置
の記録再生方法には次のような方法がある。すな
わち操作開始時にヘツドと磁気記憶体面とを接触
状態でセツトした後、前記磁気記憶体に所要の回
転を与えることにより前記ヘツドと前記磁気記憶
体面との間に空気層分の空間を作り、この状態で
記録再生をする方法である(コンタクト・スター
ト・ストツプ方式。以下CSS方式と呼ぶ)。この
方法では操作終了時に磁気記憶体の回転が止ま
り、この時ヘツドと磁気記憶体面は操作開始時と
同様に接触摩擦状態にある。 In general, there are the following methods for recording and reproducing a magnetic storage device comprising a recording and reproducing magnetic head (hereinafter referred to as a head) and a magnetic storage body. That is, after the head and the magnetic storage surface are set in contact at the start of operation, a space corresponding to an air layer is created between the head and the magnetic storage surface by giving the magnetic storage the required rotation, and this This is a method of recording and reproducing in the current state (contact start-stop method, hereinafter referred to as CSS method). In this method, at the end of the operation, the magnetic storage body stops rotating, and at this time the head and the magnetic storage body surface are in a frictional state of contact, as at the beginning of the operation.
これらの接触摩擦状態におけるヘツドと磁気記
憶体の間に生じる摩擦力は、ヘツドおよび磁気記
憶体を摩耗させついにはヘツドおよび金属磁性薄
膜媒体に傷を生じせしめることがある。また前記
接触摩擦状態においてヘツドのわずかな姿勢の変
化がヘツドにかゝる荷重を不均一にさせヘツドお
よび磁気記憶体表面に傷を作ることもある。 The frictional force generated between the head and the magnetic storage material under these contact friction conditions can wear out the head and the magnetic storage material, and may eventually cause scratches on the head and the metal magnetic thin film medium. Further, in the contact friction state, a slight change in the posture of the head may cause the load on the head to become uneven, causing scratches on the surface of the head and the magnetic storage body.
また更に記録再生中に突発的にヘツドが磁気記
憶体に接触しヘツドと磁気記憶体間に大きな摩擦
力が働き、ヘツドおよび磁気記憶体が破壊される
ことがしばしば起こる。この様なヘツドと磁気記
憶体との接触摩擦、接触摩耗および接触破壊から
ヘツドおよび磁気記憶体を保護するために磁気記
憶体の表面に保護被膜を被覆することが必要であ
る。 Furthermore, during recording and reproducing, the head suddenly comes into contact with the magnetic storage body, and a large frictional force acts between the head and the magnetic storage body, often resulting in destruction of the head and the magnetic storage body. In order to protect the head and the magnetic memory from such contact friction, contact wear and contact breakage between the head and the magnetic memory, it is necessary to coat the surface of the magnetic memory with a protective coating.
従来より種々の保護膜が提案されており、その
うち接触摩擦、接触摩耗および接触破壊に対し有
効で硬度が高くかつ量産性に優れた保護膜として
ポリ珪酸が既に提案されている(特開昭52−
20804号)。これによつても前記接触摩擦現象に対
して磁気記憶体を保護することができるが、上記
接触摩擦現象に対する信頼性は高ければ高い程望
ましく常に信頼性の向上が望まれている。 Various protective films have been proposed in the past, among which polysilicic acid has already been proposed as a protective film that is effective against contact friction, contact wear, and contact fracture, has high hardness, and is excellent in mass production (Japanese Patent Laid-Open No. 52 −
No. 20804). Although this also protects the magnetic memory against the contact friction phenomenon, the higher the reliability against the contact friction phenomenon, the more desirable it is, and improvement in reliability is always desired.
本発明の目的は上記接触摩擦現象に対してより
良く金属磁性薄膜媒体を保護する保護膜を有する
磁気記憶体の製造方法を提供することにある。 An object of the present invention is to provide a method for manufacturing a magnetic memory body having a protective film that better protects a metal magnetic thin film medium against the above-mentioned contact friction phenomenon.
すなわち本発明の磁気記憶体の製造方法は金属
磁性媒体の上に塗布したポリ珪酸にレーザー光を
照射して焼成することを特徴としている。 That is, the method for manufacturing a magnetic memory according to the present invention is characterized in that polysilicate coated on a metal magnetic medium is irradiated with laser light and fired.
次に図面を参照して本発明を詳細に説明する。 Next, the present invention will be explained in detail with reference to the drawings.
図は磁気記憶体の部分断面図である。 The figure is a partial cross-sectional view of a magnetic storage body.
図において磁気記憶体の基盤1としてアルミ合
金が軽くて加工性が良く安価なことから最も良く
用いられるが、場合によつてチタン合金が用いら
れることもある。基盤表面は機械加工により小さ
なうねり(円周方向で50μm以下、半径方向で
100μm以下)を有する面に仕上げられる。 In the figure, aluminum alloy is most often used as the base 1 of the magnetic memory body because it is light, easy to work with, and inexpensive, but titanium alloy may be used in some cases. The base surface is machined to create small waviness (less than 50μm in the circumferential direction and radial direction).
100μm or less).
次にこの基盤1の上に下地体2としてニツケル
−燐合金がめつきにより被覆され、この下地体2
の表面は機械的研磨により表面粗さ0.03μm
(Rmax)以下に鏡面仕上げされる。 Next, a nickel-phosphorus alloy is coated on this base 1 as a base body 2 by plating, and this base body 2
The surface has a surface roughness of 0.03μm by mechanical polishing.
Mirror finish is achieved below (Rmax).
次に上記下地体2の鏡面研磨面上に金属磁性媒
体3としてコバルト−ニツケル−燐合金がメツキ
により被覆され、この金属磁性媒体3の上に保護
膜4として特開昭52−20804号に示された様なポ
リ珪酸が回転塗布法により被覆される。 Next, a cobalt-nickel-phosphorus alloy is coated on the mirror-polished surface of the base body 2 as a metal magnetic medium 3 by plating, and a protective film 4 is formed on the metal magnetic medium 3 as shown in Japanese Patent Laid-Open No. 52-20804. A polysilicic acid such as that described above is coated by a spin coating method.
次にポリ珪酸を被覆した磁気記憶体の表面に波
長9μm〜11μmの炭酸ガスレーザー光を照射し
て上記ポリ珪酸膜を焼成硬化する。ポリ珪酸は波
長4μmから50μmの範囲では光の吸収が大きく
なり赤外吸収スペクトルによると特に9〜10μm
の範囲に大きな吸収があり、波長9〜11μmの炭
酸ガスレーザーをよく吸収することが分る。 Next, the surface of the magnetic storage body coated with polysilicate is irradiated with carbon dioxide laser light having a wavelength of 9 μm to 11 μm to harden the polysilicate film by baking. Polysilicic acid has a large absorption of light in the wavelength range of 4 μm to 50 μm, and according to the infrared absorption spectrum, especially in the wavelength range of 9 to 10 μm.
It can be seen that there is a large absorption in the range of , and that carbon dioxide laser with a wavelength of 9 to 11 μm is well absorbed.
本発明による磁気記憶体の製造方法としての炭
酸ガスレーザー光によるポリ珪酸の焼成法は、上
記に示した様なポリ珪酸のレーザー光の吸収によ
る熱硬化以外に下地体2として用いられるニツケ
ル−燐合金を帯磁させたりあるいは金属磁性媒体
3として用いられるコバルト−ニツケル−燐合金
の磁気特性を損なうことがないことも優れた特徴
の1つである。すなわちレーザー光の高エネルギ
ー密度と、ポリ珪酸のレーザー光吸収特性と、金
属磁性媒体3の高いレーザー光反射率によりポリ
珪酸表面とコバルト−ニツケル−燐合金またはニ
ツケル−燐合金の間に高い温度勾配が生じてポリ
珪酸の硬化と同時に下地体の帯磁あるいは金属磁
気性媒体の磁特性の劣化の防止という二重の効果
をもたらすことが出来る。 The method of baking polysilicic acid using carbon dioxide laser light as a method for producing a magnetic memory according to the present invention is applicable to nickel-phosphorus used as the base material 2, in addition to thermal curing of polysilicic acid by absorption of laser light as described above. Another excellent feature is that it does not magnetize the alloy or impair the magnetic properties of the cobalt-nickel-phosphorus alloy used as the metal magnetic medium 3. That is, due to the high energy density of the laser beam, the laser light absorption characteristics of polysilicate, and the high laser light reflectance of the metal magnetic medium 3, a high temperature gradient is created between the polysilicate surface and the cobalt-nickel-phosphorus alloy or the nickel-phosphorus alloy. This can bring about the dual effects of curing the polysilicic acid and simultaneously preventing magnetization of the base and deterioration of the magnetic properties of the metal magnetic medium.
次に実施例および比較例により本発明の磁気記
憶体の製造方法を詳細に説明する。 Next, the method for manufacturing the magnetic storage body of the present invention will be explained in detail with reference to Examples and Comparative Examples.
実施例 1
基盤1として施盤加工および熱矯正によつて十
分小さなうねり(円周方向で50μm以下および半
径方向で10μm以下)をもつた面に仕上げられた
デイスク状アルミニウム合金盤上に下地体2とし
てニツケル−燐合金を約50μmの厚さにめつき
し、このニツケル−燐めつき膜を表面粗さ0.02μ
m(Rmax)、厚さ30μmまで鏡面研磨仕上げし
た。次にこのニツケル−燐メツキ膜の上に磁性媒
体3としてコバルト−ニツケル−燐合金を0.05μ
mの厚さにめつきした。このコバルト−ニツケル
−燐めつき膜の上にテトラヒドロキシシランの2
%n−ブチルアルコール溶液を0.1μmの厚さに
塗布、乾燥してポリ珪酸を被覆した。次に出力
250W、ビーム直径1cmの連続発振炭酸ガスレー
ザーを30秒間ポリ珪酸表面に照射焼成して磁気デ
イスクを作つた。Example 1 As the substrate 1, a disc-shaped aluminum alloy plate whose surface was finished with sufficiently small waviness (50 μm or less in the circumferential direction and 10 μm or less in the radial direction) by lathe machining and heat straightening was used as the base body 2. Nickel-phosphorus alloy is plated to a thickness of approximately 50μm, and this nickel-phosphorus plating film has a surface roughness of 0.02μm.
Mirror-polished to a thickness of 30 μm (Rmax). Next, on this nickel-phosphorus plating film, a cobalt-nickel-phosphorus alloy of 0.05 μm was coated as a magnetic medium 3.
It was plated to a thickness of m. On this cobalt-nickel-phosphorized film, two coats of tetrahydroxysilane were applied.
% n-butyl alcohol solution was applied to a thickness of 0.1 μm and dried to coat polysilicic acid. Then output
A magnetic disk was made by irradiating and baking a polysilicate surface with a continuous wave carbon dioxide gas laser of 250 W and a beam diameter of 1 cm for 30 seconds.
実施例 2
実施例1と同様にして、但し、炭酸ガスレーザ
ーとして出力25KW、ビーム直径1cmのバルス発
振炭酸ガスレーザーを10秒間ポリ珪酸表面に照射
焼成して磁気デイスクを従つた。Example 2 The same procedure as in Example 1 was carried out, except that a pulse oscillation carbon dioxide laser with an output of 25 KW and a beam diameter of 1 cm was irradiated onto the polysilicate surface for 10 seconds to burn it, and a magnetic disk was attached.
比較例 1
実施例1と同様にして但しポリ珪酸膜の被覆さ
れた磁気デイスクにレーザー光を照射せずに200
℃で2時間熱焼成炉中で焼成して磁気デイスクを
作つた。Comparative Example 1 The same procedure as in Example 1 was carried out except that the magnetic disk coated with the polysilicate film was not irradiated with laser light for 200
A magnetic disk was produced by firing in a hot firing oven at ℃ for 2 hours.
比較例 2
比較例1と同様にして但し350℃で1時間熱焼
成炉中で焼成して磁気デイスクを作つた。Comparative Example 2 A magnetic disk was produced in the same manner as Comparative Example 1, except that it was fired in a hot firing oven at 350°C for 1 hour.
実施例1、2および比較例1、2で示した各磁
気デイスクを用いて0.03Rサフアイア針による引
掻試験を行なつたところ、比較例1は20g、比較
例2は40gでポリ珪酸膜表面に引掻傷が生じた
が、実施例1、2は80gまで引掻傷は生じなかつ
た。また各磁気デイスクの磁気特性を調べたとこ
ろ実施例1、2および比較例1は磁気特性の変化
はなかつたが、比較例2はニツケル−燐膜が帯磁
してヘツドからの出力電圧が50%減少した。 A scratch test with a 0.03R sapphire needle was performed using each of the magnetic disks shown in Examples 1 and 2 and Comparative Examples 1 and 2, and it was found that the surface of the polysilicate film was 20 g for Comparative Example 1 and 40 g for Comparative Example 2. However, in Examples 1 and 2, no scratches occurred up to 80 g. Furthermore, when the magnetic properties of each magnetic disk were investigated, there was no change in the magnetic properties in Examples 1 and 2 and Comparative Example 1, but in Comparative Example 2, the nickel-phosphorus film was magnetized and the output voltage from the head decreased by 50%. Diminished.
また実施例1、2共CSSを3万回繰り返したが
全く傷は生じなかつた。 Further, in both Examples 1 and 2, CSS was repeated 30,000 times, but no scratches occurred.
以上のことから本発明の磁気記憶体の製造方法
によつて製造した磁気デイスクはより優れた信頼
性を有していることが分つた。 From the above, it was found that the magnetic disk manufactured by the method for manufacturing a magnetic storage body of the present invention has superior reliability.
図は本発明より製造される磁気記憶体の部分断
面図である。
図において、1は基盤、2は下地体、3は磁性
媒体、4は保護膜である。
The figure is a partial sectional view of a magnetic memory body manufactured according to the present invention. In the figure, 1 is a base, 2 is a base body, 3 is a magnetic medium, and 4 is a protective film.
Claims (1)
し、該媒体の上にポリ珪酸を被覆した後、レーザ
ー光を照射して焼成することを特徴とする磁気記
憶体の製造方法。 2 レーザー光の波長が4μmから50μmの範囲
にある特許請求の範囲第1項に記載の磁気記憶体
の製造方法。 3 レーザー光源として炭酸ガスレーザーを用い
た特許請求の範囲第2項に記載の磁気記憶体の製
造方法。[Claims] 1. A magnetic storage body characterized by coating a mirror-polished base body with a magnetic medium, coating the medium with polysilicic acid, and then firing the magnetic medium by irradiating it with laser light. manufacturing method. 2. The method for manufacturing a magnetic memory body according to claim 1, wherein the wavelength of the laser beam is in the range of 4 μm to 50 μm. 3. The method for manufacturing a magnetic memory according to claim 2, which uses a carbon dioxide laser as a laser light source.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12762679A JPS5651028A (en) | 1979-10-02 | 1979-10-02 | Manufacture for magnetic memory element |
| US06/192,566 US4380558A (en) | 1979-10-02 | 1980-09-30 | Process for manufacturing a protective polysilicate layer of a record member by a laser beam and a magnetic record member suitably manufactured thereby |
| DE19803050525 DE3050525C2 (en) | 1979-10-02 | 1980-10-01 | Protective poly:silicate coating prodn. on magnetic recording material - by applying tetra:hydroxy-silane, precure and laser irradiation to complete cure |
| DE19803050791 DE3050791C2 (en) | 1979-10-02 | 1980-10-01 | Process for the simultaneous production of two magnetic recording media |
| DE3037168A DE3037168C2 (en) | 1979-10-02 | 1980-10-01 | Process for the production of a magnetic recording medium by means of laser radiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12762679A JPS5651028A (en) | 1979-10-02 | 1979-10-02 | Manufacture for magnetic memory element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5651028A JPS5651028A (en) | 1981-05-08 |
| JPS6216452B2 true JPS6216452B2 (en) | 1987-04-13 |
Family
ID=14964730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12762679A Granted JPS5651028A (en) | 1979-10-02 | 1979-10-02 | Manufacture for magnetic memory element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5651028A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5862823A (en) * | 1981-10-08 | 1983-04-14 | Nec Corp | Vertical magnetic storage body |
| JPH0423222A (en) * | 1990-05-17 | 1992-01-27 | Fujitsu Ltd | Production of magnetic recording medium |
-
1979
- 1979-10-02 JP JP12762679A patent/JPS5651028A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5651028A (en) | 1981-05-08 |
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