Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPS6235184B2 - - Google Patents
[go: Go Back, main page]

JPS6235184B2 - - Google Patents

Info

Publication number
JPS6235184B2
JPS6235184B2 JP4090480A JP4090480A JPS6235184B2 JP S6235184 B2 JPS6235184 B2 JP S6235184B2 JP 4090480 A JP4090480 A JP 4090480A JP 4090480 A JP4090480 A JP 4090480A JP S6235184 B2 JPS6235184 B2 JP S6235184B2
Authority
JP
Japan
Prior art keywords
pattern
bubble
stretcher
magnetic field
bias magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4090480A
Other languages
Japanese (ja)
Other versions
JPS56137576A (en
Inventor
Hisao Matsudera
Yasuharu Hidaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP4090480A priority Critical patent/JPS56137576A/en
Publication of JPS56137576A publication Critical patent/JPS56137576A/en
Publication of JPS6235184B2 publication Critical patent/JPS6235184B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0816Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using a rotating or alternating coplanar magnetic field

Description

【発明の詳細な説明】 本発明は円筒磁区(以下単にバブルと称する)
を面内磁場によつて転送させるバブル転送路にス
トレツチヤー型のバブル検出部を有するバブル素
子に関する。
[Detailed Description of the Invention] The present invention relates to a cylindrical magnetic domain (hereinafter simply referred to as a bubble).
The present invention relates to a bubble element having a stretcher-type bubble detection section in a bubble transfer path that transfers a bubble using an in-plane magnetic field.

このようなフイールド・アクセス型のバブル素
子の信号読み出しは、現在、磁気抵抗効果による
ものが主流になつている。信号検出を容易にする
ためにバブルを転送方向に直角に伸長させる方法
が一般的であり、そのために検出部の転送路の一
部にシエブロンパターン等をバブルの伸長方向に
複数個並べてパターン柱を形成したストレツチヤ
ー構成がとられている。
Currently, the mainstream method for reading out signals from such field access type bubble elements is based on the magnetoresistive effect. In order to facilitate signal detection, it is common to extend the bubble at right angles to the transfer direction, and for this purpose, a plurality of chevron patterns or the like are lined up in the direction of bubble extension in a part of the transfer path of the detection section. A stretcher configuration is adopted.

バブルが微小化すると共に、バブルを伸長させ
駆動し得るバイアス磁場領域はバブル素子の他の
部分に比べ相対的に減少するため、ストレツチヤ
ー部のパターン形状の改善等、種々の方策がとら
れている。これ等は主に伸長したバブル(以下で
はストレツチド・ドメインと称する)を駆動し得
るバイアス磁場上限を上げるためのものであつ
た。
As bubbles become smaller, the bias magnetic field area that can stretch and drive the bubbles decreases relative to other parts of the bubble element, so various measures are being taken, such as improving the pattern shape of the stretcher part. . These were mainly intended to raise the upper limit of the bias magnetic field that can drive stretched bubbles (hereinafter referred to as stretched domains).

しかしながら、ストレツチヤーとしては、スト
レツチド・ドメインの駆動バイアス磁場下限を下
げることも必要である。
However, as a stretcher, it is also necessary to lower the lower limit of the driving bias magnetic field of the stretched domain.

バブル素子の駆動可能バイアス磁場領域はスト
レツチヤーを含む各種機能部およびメジヤールー
プ、マイナーループ等の駆動バイアス磁場下限の
うちの最大値によつてバブル素子のバイアス磁場
の下限が定まる故、ストレツチヤーの駆動バイア
ス磁場下限が素子の構成部の駆動バイアス磁場下
限のうちの最大値である場合、ストレツチヤーの
駆動バイアス磁場下限を下げることによりバブル
素子としての駆動バイアス磁場下限を下げること
ができるからである。
Since the lower limit of the bias magnetic field of the bubble element is determined by the maximum value of the lower limits of the drive bias magnetic field of various functional parts including the stretcher, major loop, minor loop, etc., the drive bias magnetic field of the bubble element is This is because when the lower limit is the maximum value of the lower limits of the drive bias magnetic field of the constituent parts of the element, the lower limit of the drive bias magnetic field of the bubble element can be lowered by lowering the lower limit of the drive bias magnetic field of the stretcher.

本発明は、このような点に鑑みてなされたもの
で、その目的はストレツチヤーの駆動バイアス磁
場上限を下げることなく、駆動バイアス磁場の下
限を下げる、即ち、ストレツチヤーの駆動バイア
ス磁場領域を低バイアス磁場側に広げ得たバブル
素子を提供するにある。
The present invention has been made in view of these points, and its purpose is to lower the lower limit of the drive bias magnetic field of the stretcher without lowering the upper limit of the drive bias magnetic field. To provide a bubble element that can be expanded laterally.

ストレツチヤーの駆動バイアス磁場の上限がス
トレツチド・ドメインの収縮で定まるのに対し、
駆動バイアス磁場下限は、ストレツチド・ドメイ
ンが、ストレツチヤーのパターン柱の外側に伸び
隣接したパターン柱にパターン外側から入り込む
エラーによることが多い。
Whereas the upper limit of the stretcher driving bias magnetic field is determined by the contraction of the stretched domain,
The lower drive bias field limit is often due to errors in which the stretched domains extend outside the pattern columns of the stretcher and into adjacent pattern columns from outside the pattern.

即ち、低バイアス磁場下においてパターン柱外
へ伸長したストレツチド・ドメインの先端はポテ
ンシヤルの低い隣接したパターン柱のパターン端
へと動き、ストレツチド・ドメインは二つのパタ
ーン柱にまたがつてしまう。
That is, under a low bias magnetic field, the tip of the stretched domain extending outside the pattern column moves toward the pattern end of an adjacent pattern column with low potential, and the stretched domain ends up spanning two pattern columns.

したがつて、このようなエラーを抑制するには
ストレツチヤーを構成しているパターン柱の形状
はその端部を除いては同じで、パターン柱の上下
両面あるいは一方の端部の幾段かのパターン形状
をドメインの伸張力が小さくなるような形状に配
置すればよい。本発明はパターン柱の端部のパタ
ーン形状として、その上下両面あるいは片側の端
部のパターンのバブル転送方向のパターンの長さ
をパターン柱中央部のパターンのバブル転送方向
の長さより短かくしたことを特徴とし、このよう
にすればパターン柱端面でのドメイン伸長力は弱
まり、低バイアス磁場においてもストレツチド・
ドメインはパターン柱からパターン外へ伸長せず
また、高バイアス磁場ではパターン柱端部を除い
て充分なドメイン伸長力を有する。
Therefore, in order to suppress such errors, the shape of the pattern pillars constituting the stretcher should be the same except for the ends, and the pattern pillars should have several tiers on both the top and bottom sides of the pattern pillars or at one end. The shape may be arranged such that the stretching force of the domain is small. The present invention has a pattern shape at the end of a pattern column, in which the length of the pattern in the bubble transfer direction of both upper and lower surfaces or one end is shorter than the length of the pattern in the bubble transfer direction of the pattern in the center of the pattern column. In this way, the domain stretching force at the end face of the pattern column is weakened, and even in a low bias magnetic field, the domain stretching force is reduced.
The domains do not extend from the pattern pillars out of the pattern, and in a high bias magnetic field, there is sufficient domain stretching force except at the ends of the pattern pillars.

以下、実施例を参照し、更に詳細に説明を加え
る。バブル材料としてGGG上に(YSmLuCa)3
(FeGe)5O12(膜厚1.7μm、特性長0.18μm、飽
和磁化565ガウス)上にYIG導膜を700Å成長させ
ることによりハードバブルを抑制した薄膜上に第
1図のような従来より知られているピツチP112μ
m、ギヤツプG11μm、パターン巾W13μm、頂
角90゜のシエブロンパターンを、ドメイン伸長方
向に300段積み重ねたストレツチヤーを4000Åの
Al2O3を介して設けた磁気バブル素子のストレツ
チヤー部の駆動周波数100KHzによる転送マージ
ンを第2図に示す。
A more detailed explanation will be given below with reference to Examples. (YSmLuCa) on GGG as bubble material 3
(FeGe) 5 O 12 (film thickness: 1.7 μm, characteristic length: 0.18 μm, saturation magnetization: 565 Gauss) by growing a YIG conductive film to a thickness of 700 Å to suppress hard bubbles. Pitch P 1 12μ
A stretcher with a thickness of 4000 Å is made by stacking 300 chevron patterns in the direction of domain extension, with a gap G of 1 1 μm, a pattern width of W 13 μm, and an apex angle of 90°.
Figure 2 shows the transfer margin at a driving frequency of 100 KHz for the stretcher section of the magnetic bubble element provided through Al 2 O 3 .

実施例 上記比較例と同一特性をもつYIG薄層によりハ
ードバブル抑制をした薄膜上に4000ÅのAl2O3
介して第3図のような本発明の構成によるストレ
ツチヤー部(パターン柱中央部300段は比較例と
同一形状、パターン柱の上下両端部に各々10段、
パターン形状はパターン長をパターン柱中央の11
μmに対し10.5μm、即ち、パターン柱の上下両
端部のドメインの転送方向のギヤツプG2をパタ
ーン柱中央部のギヤツプG11μmに対し、1.5μm
にしたもの)の駆動周波数100KHzによる転送マ
ージンを第4図に示す。本実施例ではストレツチ
ヤーパターン形状としてシエブロンパターンを用
いたが、パターンの形状が変化したシエブロン形
状でも同様な効果を得る。本実施例より明らかな
ように本発明によりストレツチヤー部での駆動バ
イアス磁場上限を下げることなく、駆動バイアス
磁場下限を下げることができ、磁気バブル素子と
しての駆動マージンの拡大に寄与すること大であ
る。
EXAMPLE A stretcher part ( pattern column central part 300 The steps have the same shape as the comparative example, 10 steps each at the top and bottom ends of the pattern column,
The pattern shape is the pattern length at 11 in the center of the pattern column.
10.5 μm for μm, that is, the gap G 2 in the domain transfer direction at both the upper and lower ends of the pattern column is 1.5 μm for the gap G 1 at the center of the pattern column 1 μm.
Figure 4 shows the transfer margin at a driving frequency of 100 KHz. In this embodiment, a chevron pattern is used as the stretcher pattern shape, but a chevron shape in which the shape of the pattern is changed can also provide the same effect. As is clear from this example, according to the present invention, the lower limit of the drive bias magnetic field can be lowered without lowering the upper limit of the drive bias magnetic field in the stretcher section, which greatly contributes to expanding the drive margin of the magnetic bubble element. .

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来知られているシエブロンストレツ
チヤーの構成を示す概略図、第2図は第1図の構
成のストレツチヤー部の100KHzによる駆動マー
ジンを示す図、第3図は本発明によるストレツチ
ヤー構成の実施例を示す概略図、第4図は本発明
の実施例のストレツチヤー部の駆動マージンを示
す図である。 P1は比較例および実施例のストレツチヤーのパ
ターンピツチ、W1は比較例および実施例のスト
レツチヤーのパターン巾、G1は比較例のストレ
ツチヤーのパターンギヤツプおよび実施例のスト
レツチヤーのパターン柱中央部のドメイン転送方
向のパターンギヤツプ、G2は実施例のストレツ
チヤーのパターン柱上下両端部のドメイン転送方
向のパターンギヤツプ。
Fig. 1 is a schematic diagram showing the configuration of a conventionally known Chevron stretcher, Fig. 2 is a diagram showing the drive margin at 100KHz of the stretcher section of the configuration shown in Fig. 1, and Fig. 3 is a diagram showing the stretcher according to the present invention. FIG. 4 is a schematic diagram showing an embodiment of the structure, and FIG. 4 is a diagram showing a driving margin of the stretcher section in the embodiment of the present invention. P 1 is the pattern pitch of the stretcher in the comparative example and the example, W 1 is the pattern width of the stretcher in the comparative example and the example, G 1 is the pattern gap of the stretcher in the comparative example and the domain transfer at the center of the pattern pillar of the stretcher in the example. G2 is a pattern gap in the domain transfer direction at both the upper and lower ends of the pattern column of the stretcher in the example.

Claims (1)

【特許請求の範囲】[Claims] 1 磁気バブルドメインを保持し得る磁性材料上
の面内回転磁場によつて磁気バブルドメインを転
送させる転送路上の一部に磁気バブルドメインの
転送方向と垂直な方向に磁気バブルドメインを伸
長させ得るようにドメインの伸長方向にパターン
を並べたパターン柱から成るストレツチヤーにお
いて、ドメインの伸長方向に並んだパターン柱の
上下両端部あるいはその片側端部のパターンのパ
ターンのバブル転送方向の長さを、パターン柱の
中央部のパターンのバブル転送方向の長さより短
かくしたことを特徴とする磁気バブル素子。
1. A part of the transfer path where magnetic bubble domains are transferred by an in-plane rotating magnetic field on a magnetic material capable of holding magnetic bubble domains so that the magnetic bubble domains can be extended in a direction perpendicular to the transfer direction of the magnetic bubble domains. In a stretcher consisting of pattern columns in which patterns are arranged in the domain extension direction, the length of the pattern in the bubble transfer direction of the pattern at both upper and lower ends or one end of the pattern columns arranged in the domain extension direction is defined as the pattern column. A magnetic bubble element characterized in that the length of the central pattern in the bubble transfer direction is shorter than the length of the pattern in the bubble transfer direction.
JP4090480A 1980-03-28 1980-03-28 Magnetic bubble element Granted JPS56137576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4090480A JPS56137576A (en) 1980-03-28 1980-03-28 Magnetic bubble element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4090480A JPS56137576A (en) 1980-03-28 1980-03-28 Magnetic bubble element

Publications (2)

Publication Number Publication Date
JPS56137576A JPS56137576A (en) 1981-10-27
JPS6235184B2 true JPS6235184B2 (en) 1987-07-31

Family

ID=12593490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4090480A Granted JPS56137576A (en) 1980-03-28 1980-03-28 Magnetic bubble element

Country Status (1)

Country Link
JP (1) JPS56137576A (en)

Also Published As

Publication number Publication date
JPS56137576A (en) 1981-10-27

Similar Documents

Publication Publication Date Title
US4075612A (en) Rounded serrated edge film strip geometry for cross-tie wall memory system
US4192012A (en) Crosstie memory bit stretcher detector
JPS6235184B2 (en)
JPS6235185B2 (en)
JPS6258072B2 (en)
JPS6258073B2 (en)
US4067002A (en) Field access of bubble domain lattice
US4283775A (en) Contiguous disk bubble storage
US4027297A (en) Gapless magnetic bubble propagation path structure
US4142247A (en) Conductor-driven magnetic bubble memory with an expander-detector arrangement
JPS6037759Y2 (en) magnetic bubble memory chip
US4376137A (en) Method of fabricating a bi-level magnetic bubble propagation circuit
JPS63157396A (en) Magnetic bubble magnifier
US4577290A (en) Replicator with improved propagation performance
JPH05101640A (en) Magnetic memory element
JPS63157395A (en) Magnetic bubble magnifier
JPH04113578A (en) Magnetic storage element
JPS63140479A (en) Magnetic bubble memory element
JPS6136316B2 (en)
JPH0363992A (en) Magnetic memory element
JPH077595B2 (en) Magnetic memory element
JPS6376181A (en) Magnetic bubble expandor
JPS6120957B2 (en)
JPS5990288A (en) Magnetic bubble transfer circuit
JPH04141882A (en) Magnetic storage element
<