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JPS6235185B2 - - Google Patents
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JPS6235185B2 - - Google Patents

Info

Publication number
JPS6235185B2
JPS6235185B2 JP4167780A JP4167780A JPS6235185B2 JP S6235185 B2 JPS6235185 B2 JP S6235185B2 JP 4167780 A JP4167780 A JP 4167780A JP 4167780 A JP4167780 A JP 4167780A JP S6235185 B2 JPS6235185 B2 JP S6235185B2
Authority
JP
Japan
Prior art keywords
pattern
stretcher
magnetic field
bubble
bias magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4167780A
Other languages
Japanese (ja)
Other versions
JPS56140577A (en
Inventor
Hisao Matsudera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP4167780A priority Critical patent/JPS56140577A/en
Publication of JPS56140577A publication Critical patent/JPS56140577A/en
Publication of JPS6235185B2 publication Critical patent/JPS6235185B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0816Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using a rotating or alternating coplanar magnetic field

Description

【発明の詳細な説明】 本発明は円筒磁区(以下単にバブルと称する)
を面内磁場によつて転送させるバブル転送路にス
トレツチヤー型のバブル検出部を有するバブル素
子に関する。
[Detailed Description of the Invention] The present invention relates to a cylindrical magnetic domain (hereinafter simply referred to as a bubble).
The present invention relates to a bubble element having a stretcher-type bubble detection section in a bubble transfer path that transfers a bubble using an in-plane magnetic field.

このようなフイールド・アクセス型のバブル素
子の信号読み出しは、現在、磁気抵抗効果による
ものが主流になつている。信号検出を容易にする
ためにバブルを転送方向に直角に伸長させる方法
が一般的であり、そのために検出部の転送路の一
部にシエブロンパターン等をバブルの伸長方向に
複数個並べてパターン柱を形成したストレツチヤ
ー構成がとられている。
Currently, the mainstream method for reading out signals from such field access type bubble elements is based on the magnetoresistive effect. In order to facilitate signal detection, it is common to extend the bubble at right angles to the transfer direction, and for this purpose, a plurality of chevron patterns or the like are lined up in the direction of bubble extension in a part of the transfer path of the detection section. A stretcher configuration is adopted.

バブルが微小化すると共にバブルを伸長させ、
駆動し得るバイアス磁場領域はバブル素子の他の
部分に比べ、相対的に減少するため、ストレツチ
ヤー部のパターン形状の改善等、種々の方策がと
られている。これ等は主に伸長したバブル(以下
ではストレツチド・ドメインと称する)を駆動し
得るバイアス磁場上限を上げるためのものであつ
た。
As the bubble becomes smaller, it expands,
Since the bias magnetic field area that can be driven is relatively reduced compared to other parts of the bubble element, various measures have been taken, such as improving the pattern shape of the stretcher part. These were mainly intended to raise the upper limit of the bias magnetic field that can drive stretched bubbles (hereinafter referred to as stretched domains).

しかしながら、ストレツチヤーとしては、スト
レツチド・ドメインの駆動バイアス磁場下限を下
げることも必要である。
However, as a stretcher, it is also necessary to lower the lower limit of the driving bias magnetic field of the stretched domain.

バブル素子の駆動可能バイアス磁場領域は、ス
トレツチヤーを含む各種機能部およびメジヤール
ープ、マイナーループ等の駆動バイアス磁場下限
のうちの最大値によつてバブル素子のバイアス磁
場の下限が定まる故、ストレツチヤーの駆動バイ
アス磁場下限が素子の構成部の駆動バイアス磁場
下限のうちの最大値である場合、ストレツチヤー
の駆動バイアス磁場下限を下げることにより、バ
ブル素子としての駆動バイアス磁場下限を下げる
ことができるからである。
The lower limit of the bias magnetic field of the bubble element is determined by the maximum value of the lower limit of the drive bias magnetic field of various functional parts including the stretcher, major loop, minor loop, etc. This is because when the lower limit of the magnetic field is the maximum value of the lower limits of the drive bias magnetic field of the component parts of the element, the lower limit of the drive bias magnetic field of the bubble element can be lowered by lowering the lower limit of the drive bias magnetic field of the stretcher.

本発明は、このような点に鑑みてなされたもの
で、その目的はストレツチヤーの駆動バイアス磁
場上限を下げることなく、駆動バイアス磁場の下
限を下げる、即ち、ストレツチヤーの駆動バイア
ス磁場領域を低バイアス磁場側に広げ得たバブル
素子を提供するにある。
The present invention has been made in view of these points, and its purpose is to lower the lower limit of the drive bias magnetic field of the stretcher without lowering the upper limit of the drive bias magnetic field. To provide a bubble element that can be expanded laterally.

ストレツチヤーの駆動バイアス磁場の上限がス
トレツチド・ドメインの収縮で定まるのに対し、
駆動バイアス磁場下限は、ストレツチド・ドメイ
ンが、ストレツチヤーのパターン柱の外側に伸び
隣接したパターン柱にパターン外側から入り込む
エラーによることが多い。
Whereas the upper limit of the stretcher drive bias magnetic field is determined by the contraction of the stretched domain,
The lower drive bias field limit is often due to errors in which the stretched domains extend outside the pattern columns of the stretcher and into adjacent pattern columns from outside the pattern.

即ち、低バイアス磁場下においてパターン柱外
へ伸長したストレツチド・ドメインの先端は、ポ
テンシヤルの低い、隣接したパターン柱のパター
ン端へと動き、ストレツチド・ドメインは、二つ
のパターン柱にまたがつてしまう。
That is, under a low bias magnetic field, the tip of the stretched domain extending outside the pattern column moves toward the pattern end of the adjacent pattern column, which has a low potential, and the stretched domain straddles the two pattern columns.

したがつて、このようなエラーを抑制するには
ストレツチヤーを構成しているパターン柱の形状
は、その端部を除いては同じで、パターン柱の上
下両面、あるいは一方の端部の幾段かのパターン
形状をドメインの伸長力が小さくなるような形状
に配置すればよい。
Therefore, in order to suppress such errors, the shape of the pattern pillars constituting the stretcher should be the same except for the ends, and the shape of the pattern pillars should be the same on both the upper and lower sides of the pattern pillars, or in several steps at one end. The pattern shape may be arranged in such a shape that the stretching force of the domain becomes small.

本発明は、パターン柱の上下両端あるいは片側
の端部のパターン形状としてパターン柱の中央部
のパターンよりパターン巾を小さくしたことを特
徴とし、このようにすればパターン柱端部でのド
メイン伸長力は弱まり、低バイアス磁場において
もストレツチド・ドメインは、パターン柱からパ
ターン外へ伸長せず、また、高バイアス磁場では
パターン柱端部を除いて充分なドメイン伸長力を
有する。
The present invention is characterized in that the pattern shape of the upper and lower ends or one end of the pattern column has a pattern width smaller than that of the pattern at the center of the pattern column. is weakened, and even in a low bias magnetic field, the stretched domains do not extend from the pattern pillars to the outside of the pattern, and in a high bias magnetic field, there is sufficient domain stretching force except at the ends of the pattern pillars.

以下、実施例を参照し、更に詳細に説明を加え
る。バブル材料としてGGG上に成長した
(YSmLuCa)3(FeGe)5O12(膜厚1.7μm、特性
長0.18μm飽和磁化565ガウス)上にYIG薄膜を
700Å成長させることによりハードバブルを抑制
した薄膜上に第1図のような従来より知られてい
るピツチP112μm、ギヤツプG11μm、パターン
巾W13μm、頂角90゜のシエブロンパターンを、
ドメイン伸長方向に300段積み重ねたストレツチ
ヤーを4000ÅのAl2O3を介して設けた磁気バブル
素子のストレツチヤー部の駆動周波数100KHzに
よる転送マージンを第2図に示す。
A more detailed explanation will be given below with reference to Examples. A YIG thin film was grown on (YSmLuCa) 3 (FeGe) 5 O 12 (film thickness 1.7 μm, characteristic length 0.18 μm, saturation magnetization 565 Gauss) grown on GGG as a bubble material.
A conventional chevron pattern with pitch P 1 12 μm, gap G 1 1 μm, pattern width W 1 3 μm, and apex angle 90° as shown in Figure 1 was formed on a thin film grown to 700 Å to suppress hard bubbles. ,
Figure 2 shows the transfer margin at a driving frequency of 100 KHz in the stretcher section of a magnetic bubble element in which 300 stages of stretchers are stacked in the direction of domain extension with 4000 Å of Al 2 O 3 interposed therebetween.

実施例 上記比較例と同一特性を持つYIG薄層によりハ
ードバブル抑制した薄膜上に4000ÅのAl2O3を介
して第3図のような本発明の構成によるストレツ
チヤー部(パターン柱中央部300段は比較例と同
一形状、パターン柱の上下両端部の各々に10段、
パターン形状をピツチ、ギヤツプ、頂角は比較例
と同一で、パターン巾W2を2.5μmのシエブロ
ンパターンを並べたもの)の駆動周波数100KHz
による転送マージンを第4図に示す。
Example A stretcher section (300 steps at the center of the pattern column) according to the structure of the present invention as shown in FIG. is the same shape as the comparative example, with 10 steps on each of the upper and lower ends of the pattern column,
The pitch, gap, and apex angle of the pattern are the same as those of the comparative example, and the pattern width W2 is a series of chevron patterns of 2.5 μm), and the driving frequency is 100 KHz.
Figure 4 shows the transfer margin.

本実施例ではストレツチヤーパターン形状とし
てシエブロンパターンを用いたが、パターンの形
状が変形したシエブロン形状でも同様な効果を得
る。本実施例より明らかなように、本発明により
ストレツチヤー部での駆動バイアス磁場下限を下
げることができ、磁気バブル素子としての駆動マ
ージンの拡大に寄与すること大である。
In this embodiment, a chevron pattern is used as the stretcher pattern shape, but a chevron shape in which the pattern shape is deformed can also be used to obtain the same effect. As is clear from this embodiment, the present invention makes it possible to lower the lower limit of the drive bias magnetic field in the stretcher section, which greatly contributes to expanding the drive margin of the magnetic bubble element.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来知られているシエブロンストレツ
チヤーの構成を示す概略図、第2図は第1図の構
成のストレツチヤー部の100KHzによる駆動マー
ジンを示す図、第3図は本発明によるストレツチ
ヤー構成の実施例を示す概略図、第4図は本発明
の実施例のストレツチヤー部の駆動マージンを示
す図である。 P1は比較例および実施例のストレツチヤーパ
ターンのピツチ、G1は比較例および実施例のス
トレツチヤーパターンのギヤツプ、W1は比較例
のストレツチヤーパターン巾および実施例のスト
レツチヤーのパターン柱中央部のパターン巾、W
2は実施例のストレツチヤーパターン柱の上下両
端部のパターン巾。
Fig. 1 is a schematic diagram showing the configuration of a conventionally known Chevron stretcher, Fig. 2 is a diagram showing the drive margin at 100KHz of the stretcher section of the configuration shown in Fig. 1, and Fig. 3 is a diagram showing the stretcher according to the present invention. FIG. 4 is a schematic diagram showing an embodiment of the structure, and FIG. 4 is a diagram showing a driving margin of the stretcher section in the embodiment of the present invention. P1 is the pitch of the stretcher pattern of the comparative example and the example, G1 is the gap of the stretcher pattern of the comparative example and the example, W1 is the stretcher pattern width of the comparative example and the center part of the pattern column of the stretcher of the example pattern width, W
2 is the pattern width at both the upper and lower ends of the stretcher pattern column in the example.

Claims (1)

【特許請求の範囲】[Claims] 1 磁気バブルドメインを保持し得る磁性材料上
の面内回転磁場によつて磁気バブルドメインを転
送させる転送路上の一部に、磁気バブルドメイン
の転送方向と垂直な方向に磁気バブルドメインを
伸長させ得るようにドメインの伸長方向にパター
ンを並べたパターン柱から成るストレツチヤーに
おいて、ドメインの伸長方向に並んだパターン柱
の上下両端部あるいは片側の端部のパターンのパ
ターン巾がパターン柱の中央部のパターンのパタ
ーン巾より小さくなるように構成したことを特徴
とする磁気バブル素子。
1. Magnetic bubble domains can be extended in a direction perpendicular to the transfer direction of magnetic bubble domains on a part of the transfer path where magnetic bubble domains are transferred by an in-plane rotating magnetic field on a magnetic material capable of holding magnetic bubble domains. In a stretcher consisting of pattern pillars in which patterns are arranged in the domain extension direction, the pattern width of the pattern at both upper and lower ends or one end of the pattern pillars arranged in the domain extension direction is equal to that of the pattern in the center of the pattern pillar. A magnetic bubble element characterized in that it is configured to be smaller than a pattern width.
JP4167780A 1980-03-31 1980-03-31 Magnetic bubble element Granted JPS56140577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4167780A JPS56140577A (en) 1980-03-31 1980-03-31 Magnetic bubble element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4167780A JPS56140577A (en) 1980-03-31 1980-03-31 Magnetic bubble element

Publications (2)

Publication Number Publication Date
JPS56140577A JPS56140577A (en) 1981-11-02
JPS6235185B2 true JPS6235185B2 (en) 1987-07-31

Family

ID=12615040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4167780A Granted JPS56140577A (en) 1980-03-31 1980-03-31 Magnetic bubble element

Country Status (1)

Country Link
JP (1) JPS56140577A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH061886B2 (en) * 1984-06-05 1994-01-05 ソニー株式会社 Receiving machine

Also Published As

Publication number Publication date
JPS56140577A (en) 1981-11-02

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