JPS6258073B2 - - Google Patents
Info
- Publication number
- JPS6258073B2 JPS6258073B2 JP55041679A JP4167980A JPS6258073B2 JP S6258073 B2 JPS6258073 B2 JP S6258073B2 JP 55041679 A JP55041679 A JP 55041679A JP 4167980 A JP4167980 A JP 4167980A JP S6258073 B2 JPS6258073 B2 JP S6258073B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- stretcher
- magnetic field
- bias magnetic
- bubble
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
- G11C19/0816—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using a rotating or alternating coplanar magnetic field
Description
【発明の詳細な説明】
本発明は円筒磁区(以下単にバブルと称する)
を面内磁場によつて転送させるバブル転送路にス
トレツチヤー型のバブル検出部を有するバブル素
子に関する。このようなフイールド・アクセス型
のバブル素子の信号読み出しは、現在、磁気抵抗
効果によるものが主流になつている。信号検出を
容易にするためにバブルを転送方向に直角に伸長
させる方法が一般的であり、そのために検出部の
転送路の一部にシエブロンパターン等をバブルの
伸長方向に複数個並べてパターン柱を形成したス
トレツチヤー構成がとられている。[Detailed Description of the Invention] The present invention relates to a cylindrical magnetic domain (hereinafter simply referred to as a bubble).
The present invention relates to a bubble element having a stretcher-type bubble detection section in a bubble transfer path that transfers a bubble using an in-plane magnetic field. Currently, the mainstream method for reading out signals from such field access type bubble elements is based on the magnetoresistive effect. In order to facilitate signal detection, it is common to extend the bubble at right angles to the transfer direction, and for this purpose, a plurality of chevron patterns or the like are lined up in the direction of bubble extension in a part of the transfer path of the detection section. A stretcher configuration is adopted.
バブルが微小化すると共にバブルを伸長させ駆
動し得るバイアス磁場領域は、バブル素子の他の
部分に比べ相対的に減少するため、ストレツチヤ
ー部のパターン形状を改善等、種々の方策がとら
れている。これ等は主に伸長したバブル(以下で
はストレツチド・ドメインと称する)を駆動し得
るバイアス磁場上限を上げるためのものであつ
た。 As bubbles become smaller, the bias magnetic field area that can stretch and drive the bubbles decreases relative to other parts of the bubble element, so various measures have been taken, such as improving the pattern shape of the stretcher part. . These were mainly intended to raise the upper limit of the bias magnetic field that can drive stretched bubbles (hereinafter referred to as stretched domains).
しかしながら、ストレツチヤーとしては、スト
レツチド・ドメインの駆動バイアス磁場下限を下
げることも必要である。 However, as a stretcher, it is also necessary to lower the lower limit of the driving bias magnetic field of the stretched domain.
バブル素子の駆動可能バイアス磁場領域は、ス
トレツチヤーを含む各種機能部およびメジヤール
ープ,マイナーループ等の駆動バイアス磁場下限
のうちの最大値によつて、バブル素子のバイアス
磁場の下限が定まる故、ストレツチヤーの駆動バ
イアス磁場下限が素子の構成部の駆動バイアス磁
場下限のうちの最大値である場合、ストレツチヤ
ーの駆動バイアス磁場下限を下げることによりバ
ブル素子としての駆動バイアス磁場下限を下げる
ことができるからである。 Since the lower limit of the bias magnetic field of the bubble element is determined by the maximum value of the lower limit of the drive bias magnetic field of various functional parts including the stretcher, major loop, minor loop, etc., the lower limit of the bias magnetic field of the bubble element is determined by the lower limit of the bias magnetic field of the bubble element. This is because if the lower limit of the bias magnetic field is the maximum value of the lower limits of the drive bias magnetic field of the component parts of the element, the lower limit of the drive bias magnetic field of the bubble element can be lowered by lowering the lower limit of the drive bias magnetic field of the stretcher.
本発明は、このような点に鑑みてなされたもの
で、その目的はストレツチヤーの駆動バイアス磁
場上限を下げることなく、駆動バイアス磁場の下
限を下げる、即ちストレツチヤーの駆動バイアス
磁場領域を低バイアス磁場側に広げ得たバブル素
子を提供するにある。 The present invention has been made in view of these points, and its purpose is to lower the lower limit of the drive bias magnetic field of the stretcher without lowering the upper limit of the drive bias magnetic field, that is, to shift the drive bias magnetic field region of the stretcher to the low bias magnetic field side. The object of the present invention is to provide a bubble element that can be expanded to
ストレツチヤーの駆動バイアス磁場の上限がス
トレツチド・ドメインの収縮で定まるのに対し、
駆動バイアス磁場下限は、ストレツチド・ドメイ
ンがストレツチヤーのパターン柱の外側に伸び隣
接したパターン柱にパターン外側から入り込むエ
ラーによることが多い。 Whereas the upper limit of the stretcher drive bias magnetic field is determined by the contraction of the stretched domain,
The lower drive bias field limit is often due to errors in which the stretched domains extend outside the pattern columns of the stretcher and enter adjacent pattern columns from outside the pattern.
即ち、低バイアス磁場下においてパターン柱外
へ伸長したストレツチド・ドメインの先端はポテ
ンシヤルの低い、隣接したパターン柱のパターン
端へと動き、ストレツチド・ドメインは二つのパ
ターン柱にまたがつてしまう。 That is, under a low bias magnetic field, the tip of the stretched domain extending outside the pattern column moves toward the pattern end of the adjacent pattern column, which has a lower potential, and the stretched domain straddles the two pattern columns.
したがつて、このようなエラーを抑制するには
ストレツチヤーを構成しているパターン柱の形状
は、その端部を除いては同じで、パターン柱の上
下両面、あるいは一方の端部の幾段かのパターン
形状をドメインの伸長力が小さくなるような形状
に配置すればよい。 Therefore, in order to suppress such errors, the shape of the pattern pillars constituting the stretcher should be the same except for the ends, and the shape of the pattern pillars should be the same on both the upper and lower sides of the pattern pillars, or in several steps at one end. The pattern shape may be arranged in such a shape that the stretching force of the domain becomes small.
本発明はパターン柱の端部のパターン形状とし
てパターン柱の上下両端部あるいは片側端部のパ
ターン頂角をパターン柱中央部のパターン頂角よ
り小さな構造にしたことを特徴とし、このように
すればパターン柱端部でのドメイン伸長力は弱ま
り、低バイアス磁場においてもストレツチド・ド
メインはパターン柱からパターン外へ伸長せずま
た、高バイアス磁場ではパターン柱端部を除いて
充分なドメイン伸長力を有する。 The present invention is characterized in that the pattern shape at the end of the pattern column is such that the pattern apex angle at both the upper and lower ends or at one end of the pattern column is smaller than the pattern apex angle at the center of the pattern column. The domain stretching force at the ends of the pattern pillars is weakened, and the stretched domains do not extend from the pattern pillars to the outside of the pattern even in a low bias magnetic field, and in a high bias magnetic field, there is sufficient domain stretching force except at the ends of the pattern pillars. .
以下実施例を参照し、更に詳細に説明を加え
る。バブル材料としてGGG上に成長した
(YSmLuCa)3(FeGe)5O12(膜厚1.7μm,特性
長0.18μm,飽和磁化565ガウス)上にYIG薄膜
を700Å成長させることによりハードバブルを抑
制した薄膜上に第1図のような従来より知られて
いるピツチ12μm,ギヤツプ1μm,パターン巾
3μm,頂角α190゜のシエブロンパターンを、
ドメイン伸長方向に300段積み重ねたストレツチ
ヤーを4000ÅのAl2O3を介して設けた磁気バブル
素子のストレツチヤー部の駆動周波数100KHzに
よる転送マージンを第2図に示す。 A more detailed explanation will be given below with reference to Examples. A thin film that suppresses hard bubbles by growing a YIG thin film of 700 Å on (YSmLuCa) 3 (FeGe) 5 O 12 (film thickness 1.7 μm, characteristic length 0.18 μm, saturation magnetization 565 Gauss) grown on GGG as a bubble material. Above is a conventional chevron pattern with a pitch of 12 μm, a gap of 1 μm, a pattern width of 3 μm, and an apex angle of α 1 90°, as shown in Figure 1.
Figure 2 shows the transfer margin at a driving frequency of 100 KHz in the stretcher section of a magnetic bubble element in which 300 stages of stretchers are stacked in the direction of domain extension with 4000 Å of Al 2 O 3 interposed therebetween.
実施例
上記比較例と同一特性をもつYIG薄層によりハ
ードバブル抑制をした薄膜上に4000ÅのAl2O3を
介して第3図のような本発明の構成によるストレ
ツチヤー部(パターン柱中央部300段は比較例と
同一形状、パターン柱の上下両端部に各々10段、
パターン形状をパターン頂角α2を80゜にしたも
ので、上下端部のパターンのドメイン伸長方向の
間隔は1μm以下にならないようにしたもの)の
駆動周波数100KHzによる転送マージンを第4図
に示す。本実施例ではストレツチヤーパターン形
状としてシエブロンパターンを用いたが、パター
ンの形状が変形したシエブロン形状でも同様な効
果を得る。本実施例より明らかなように、本発明
によりストレツチヤー部での駆動バイアス磁場上
限を下げることなく、駆動バイアス磁場下限を下
げることができ、磁気バブル素子としての駆動マ
ージンの拡大に寄与すること大である。EXAMPLE A stretcher part ( pattern column central part 300 The steps have the same shape as the comparative example, 10 steps each at the top and bottom ends of the pattern column,
Figure 4 shows the transfer margin at a driving frequency of 100 KHz for a pattern shape in which the pattern apex angle α2 is 80 degrees, and the spacing in the domain extension direction of the pattern at the top and bottom ends is not less than 1 μm. . In this embodiment, a chevron pattern is used as the stretcher pattern shape, but a chevron shape in which the pattern shape is deformed can also be used to obtain the same effect. As is clear from this example, according to the present invention, the lower limit of the drive bias magnetic field can be lowered without lowering the upper limit of the drive bias magnetic field in the stretcher section, which greatly contributes to expanding the drive margin of the magnetic bubble element. be.
第1図は従来知られているシエブロンストレツ
チヤーの構成を示す概略図、第2図は第1図の構
成のストレツチヤー部の100KHzによる駆動マー
ジンを示す図、第3図は本発明によるストレツチ
ヤー構成の実施例を示す概略図、第4図は本発明
の実施例のストレツチヤー部の駆動マージンを示
す図である。
α1は比較例のストレツチヤーパターンの頂角
および実施例のストレツチヤーのパターン柱の中
央部のパターン頂角、α2は実施例のストレツチ
ヤーのパターン柱両端部のパターン頂角。
Fig. 1 is a schematic diagram showing the configuration of a conventionally known Chevron stretcher, Fig. 2 is a diagram showing the drive margin at 100KHz of the stretcher section of the configuration shown in Fig. 1, and Fig. 3 is a diagram showing the stretcher according to the present invention. FIG. 4 is a schematic diagram showing an embodiment of the structure, and FIG. 4 is a diagram showing a driving margin of the stretcher section in the embodiment of the present invention. α 1 is the apex angle of the stretcher pattern of the comparative example and the pattern apex angle of the center part of the pattern column of the stretcher of the example, and α 2 is the pattern apex angle of both ends of the pattern column of the stretcher of the example.
Claims (1)
の面内回転磁場によつて磁気バブルドメインを転
送させる転送路上の一部に、磁気バブルドメイン
の転送方向と垂直な方向に磁気バブルドメインを
伸長させ得るようにドメインの伸長方向にパター
ンを並べたパターン柱から成るストレツチヤーに
おいて、ドメインの伸長方向に並んだパターン柱
の上下両端部あるいはその片端部のパターンの頂
角をパターン柱の中央部のパターンの頂角より小
さくしたことを特徴とする磁気バブル素子。1. Magnetic bubble domains can be extended in a direction perpendicular to the transfer direction of magnetic bubble domains on a part of the transfer path where magnetic bubble domains are transferred by an in-plane rotating magnetic field on a magnetic material capable of holding magnetic bubble domains. In a stretcher consisting of pattern columns with patterns arranged in the domain extension direction, the apex angle of the pattern at both the upper and lower ends or one end of the pattern columns arranged in the domain extension direction is the apex of the pattern in the center of the pattern column. A magnetic bubble element characterized by being smaller than a corner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4167980A JPS56140579A (en) | 1980-03-31 | 1980-03-31 | Magnetic bubble element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4167980A JPS56140579A (en) | 1980-03-31 | 1980-03-31 | Magnetic bubble element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56140579A JPS56140579A (en) | 1981-11-02 |
| JPS6258073B2 true JPS6258073B2 (en) | 1987-12-03 |
Family
ID=12615102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4167980A Granted JPS56140579A (en) | 1980-03-31 | 1980-03-31 | Magnetic bubble element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56140579A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53145434A (en) * | 1977-05-24 | 1978-12-18 | Nec Corp | Cylindrical magnetic domain element |
-
1980
- 1980-03-31 JP JP4167980A patent/JPS56140579A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56140579A (en) | 1981-11-02 |
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