JPS6247357B2 - - Google Patents
Info
- Publication number
- JPS6247357B2 JPS6247357B2 JP55071084A JP7108480A JPS6247357B2 JP S6247357 B2 JPS6247357 B2 JP S6247357B2 JP 55071084 A JP55071084 A JP 55071084A JP 7108480 A JP7108480 A JP 7108480A JP S6247357 B2 JPS6247357 B2 JP S6247357B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- dielectric layer
- display panel
- glass substrate
- display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Gas-Filled Discharge Tubes (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
本発明は表示装置、特に低電圧駆動化を図つた
エレクトロルミネツセンス(以下ELと略称す
る)表示パネルのような表示装置の改良に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a display device, particularly a display device such as an electroluminescent (hereinafter abbreviated as EL) display panel, which is driven at a lower voltage.
近年EL層を誘電体層でサンドイツチ状にはさ
んだ、いわゆる二重絶縁膜三層構造で構成した
EL表示パネルが開発、実用化されている。この
ようなEL表示パネルの低電圧駆動化を図る一手
段として誘電体層をチタン酸鉛(PbTiO3)のよう
な強誘電体物質で形成してEL層に印加される電
圧を実質的に大きくするという方法が採られてい
る。 In recent years, the EL layer has been sandwiched between dielectric layers in the form of a sandwich, a so-called double-insulating three-layer structure.
EL display panels have been developed and put into practical use. One way to drive such EL display panels at low voltages is to form the dielectric layer with a ferroelectric material such as lead titanate (PbTiO 3 ) to substantially increase the voltage applied to the EL layer. The method is being adopted.
このようなEL表示パネルの構成は一般に第1
図に示すように支持基板として透明なガラス基板
1を用い、そのガラス基板1上に細条の透明電極
2を平行に多数配設し、透明電極2表面を含むガ
ラス基板1表面に誘電体層3を介してEL層4を
形成し、さらに該EL層4上に誘電体層5を介し
て細条の背面電極6を前記透明電極2と直交する
関係で配設してある。そして透明電極2と背面電
極6との間に選択的に駆動電圧を印加することに
より、その交点部のEL層4を発光することを利
用して所望の形象を表示するようになつている。
ところで誘電体層3,5をPbTiO3のような強誘
電体物質で構成する場合、特に誘電体層3におい
て、非晶質であるガラス基板1上面と結晶性の良
好な透明電極2〔たとえば酸化インジウム
(In2O3)膜〕上面とでは、下地層の違いによりそ
の上に形成されるPbTiO3膜の結晶性に不均一を
生じる。すなわち結晶性の良好な透明電極2上で
はPbTiO3膜も良好な結晶性を示すが、ガラス基
板1上に直接形成されたPbTiO3膜は結晶性が悪
くなる。その結果誘電体層3における透明電極2
の端縁部近傍で結晶性が急変する箇所を生じ、そ
の結晶性の急変箇所で誘電体層3が剥離するとい
う問題があつた。またPbTiO3は結晶性が良好な
程、誘電率も高くなるので、誘電体層3における
結晶性の急変箇所で誘電率が急変し、電界分布の
不均一を招き、表示輝度にむらを生じるなどの問
題もあつた。 The configuration of such an EL display panel is generally the first one.
As shown in the figure, a transparent glass substrate 1 is used as a support substrate, a large number of thin transparent electrodes 2 are arranged in parallel on the glass substrate 1, and a dielectric layer is formed on the surface of the glass substrate 1 including the surface of the transparent electrodes 2. An EL layer 4 is formed on the EL layer 4 via a dielectric layer 5, and a strip back electrode 6 is disposed perpendicularly to the transparent electrode 2 on the EL layer 4 via a dielectric layer 5. By selectively applying a driving voltage between the transparent electrode 2 and the back electrode 6, a desired image is displayed using the EL layer 4 at the intersection point emitting light.
By the way, when the dielectric layers 3 and 5 are composed of a ferroelectric material such as PbTiO 3 , especially in the dielectric layer 3, the upper surface of the amorphous glass substrate 1 and the transparent electrode 2 with good crystallinity [for example, oxidized Indium (In 2 O 3 ) film] Due to the difference in the underlying layer, the crystallinity of the PbTiO 3 film formed thereon becomes non-uniform. That is, the PbTiO 3 film also shows good crystallinity on the transparent electrode 2 which has good crystallinity, but the PbTiO 3 film formed directly on the glass substrate 1 has poor crystallinity. As a result, the transparent electrode 2 in the dielectric layer 3
There was a problem in that there were places where the crystallinity suddenly changed near the edges of the dielectric layer 3, and the dielectric layer 3 peeled off at the places where the crystallinity suddenly changed. In addition, the better the crystallinity of PbTiO 3 , the higher the dielectric constant, so the dielectric constant changes suddenly at points where the crystallinity suddenly changes in the dielectric layer 3, leading to uneven electric field distribution and uneven display brightness. There were also problems.
本発明は前述の問題点を除去することを目的と
してなされたもので、その特徴は支持基板上に所
定パターンの電極を配設し、該電極表面を含む支
持基板表面に結晶性誘電体層を介して表示媒体層
をそなえてなる表示装置において、前記誘電体層
と前記支持基板との間に結晶性絶縁体よりなる下
地層を設けたところにある。 The present invention has been made for the purpose of eliminating the above-mentioned problems, and its features include disposing electrodes in a predetermined pattern on a support substrate, and forming a crystalline dielectric layer on the surface of the support substrate including the electrode surface. In a display device having a display medium layer interposed therebetween, a base layer made of a crystalline insulator is provided between the dielectric layer and the support substrate.
以下本発明の一実施例をEL表示パネルに適用
した場合につき図面を参照して説明する。 An embodiment of the present invention applied to an EL display panel will be described below with reference to the drawings.
第2図は本発明によるEL表示パネルの構造を
説明するための要部断面図であつて、第1図と同
等部分には同一符号を用いて示してある。同図に
おいて1は透明ガラス基板であつて、そのガラス
基板1上には結晶性絶縁体からなる下地層7が形
成してある。そしてその下地層7上には、従来の
EL表示パネルと同じく、In2O3などの細条の透明
電極2を配設し、透明電極2上を含む下地層7上
にPbTiO3のような強誘電体物質からなる誘電体
層3を介してマンガンを添加した硫化亜鉛
(ZnS:Mn)のようなEL材料からなるEL層4が
形成してある。さらにそのEL層4上にPbTiO3か
らなる誘電体層5を介してアルミニウム(Al)
などからなる細条の背面電極6が前記透明電極2
と直交する関係で配設してある。図からも明らか
なように本発明によるEL表示パネルと従来のEL
表示パネルとの構造上の相異点は非晶質であるガ
ラス基板1上にあらかじめ結晶性の良好な透光性
の絶縁体からなる下地層7を形成したところにあ
る。 FIG. 2 is a sectional view of a main part for explaining the structure of the EL display panel according to the present invention, and the same parts as those in FIG. 1 are designated by the same reference numerals. In the figure, reference numeral 1 denotes a transparent glass substrate, on which a base layer 7 made of a crystalline insulator is formed. And on top of that base layer 7, there is a conventional
Similar to the EL display panel, a thin transparent electrode 2 made of In 2 O 3 or the like is provided, and a dielectric layer 3 made of a ferroelectric material such as PbTiO 3 is formed on the base layer 7 including the top of the transparent electrode 2. An EL layer 4 is formed of an EL material such as zinc sulfide (ZnS:Mn) with manganese added thereto. Further, on the EL layer 4, aluminum (Al) is applied via a dielectric layer 5 made of PbTiO 3 .
The back electrode 6 in the form of strips made of
It is arranged in a relationship that is perpendicular to . As is clear from the figure, the EL display panel according to the present invention and the conventional EL
The structural difference from the display panel is that a base layer 7 made of a transparent insulator with good crystallinity is formed on the amorphous glass substrate 1 in advance.
この下地層7はたとえば硫化亜鉛(ZnS)から
なり、ガラス基板1の温度を200℃程度に維持し
た状態でZnSを蒸着することにより、非晶質のガ
ラス基板1上に結晶性の良好なZnS膜として成膜
したものである。このように非晶質のガラス基板
1上に結晶性絶縁体からなる下地層7を形成して
おくことにより、誘電体層3をスパツタ法で蒸着
成膜する際に、誘電体層3を均一な結晶性誘電体
膜として形成することができる。つまり従来の
EL表示パネルにおいては結晶性の良好な透明電
極2と非晶質であるガラス基板1とが下地層とな
るので、その上に形成される誘電体層3に結晶性
の不均一を生じていたが、本発明によるEL表示
パネルの誘電体層3は非晶質のガラス基板1上に
前記のような結晶性絶縁体からなる下地層7を介
して形成されるので、従来のように結晶性の不均
一を生じることなく均一な結晶性誘電体層3を容
易に形成できる。かくして誘電体層3の結晶性の
不均一に起因して生じていた誘電体層3の剥離や
表示輝度のむらなどといつた障害を除去すること
ができ、PbTiO3などの強誘電体物質を用いた低
電圧駆動が可能な高性能なEL表示パネルを容易
に実現できる利点がある。 This base layer 7 is made of, for example, zinc sulfide (ZnS), and by depositing ZnS while maintaining the temperature of the glass substrate 1 at about 200°C, ZnS with good crystallinity is formed on the amorphous glass substrate 1. It was formed as a film. By forming the base layer 7 made of a crystalline insulator on the amorphous glass substrate 1 in this way, the dielectric layer 3 can be uniformly formed when the dielectric layer 3 is deposited by sputtering. It can be formed as a crystalline dielectric film. In other words, conventional
In an EL display panel, the transparent electrode 2 with good crystallinity and the amorphous glass substrate 1 serve as the base layer, so that the dielectric layer 3 formed thereon has non-uniform crystallinity. However, since the dielectric layer 3 of the EL display panel according to the present invention is formed on the amorphous glass substrate 1 via the base layer 7 made of a crystalline insulator as described above, it is not crystalline as in the conventional case. A uniform crystalline dielectric layer 3 can be easily formed without causing non-uniformity. In this way, problems such as peeling of the dielectric layer 3 and uneven display brightness caused by non-uniform crystallinity of the dielectric layer 3 can be removed, and it is possible to eliminate problems such as peeling of the dielectric layer 3 and uneven display brightness. This has the advantage of making it easy to create high-performance EL display panels that can be driven at low voltages.
なお前述の実施例ではEL表示パネルについて
述べたが、これに限らず表示媒体層として易放電
ガスを用いたガス放電表示パネルのようなその他
の表示装置に適用しても同様の効果を得ることが
できる。さらにまた表示装置に限らず光導波路や
表面弾性波フイルタなどの強誘電体膜の形成にも
適用可能である。 In addition, although the above-mentioned embodiment described an EL display panel, the present invention is not limited to this, and similar effects can be obtained even when applied to other display devices such as a gas discharge display panel that uses easily discharged gas as a display medium layer. Can be done. Furthermore, it is applicable not only to display devices but also to the formation of ferroelectric films such as optical waveguides and surface acoustic wave filters.
第1図は従来のEL表示パネルの構造を説明す
るための要部断面図、第2図は本発明によるEL
表示パネルの構造を説明するための要部断面図で
ある。
1:ガラス基板、2,6:電極、3,5:誘電
体層、4:EL層、7:結晶性絶縁体からなる下
地層。
Figure 1 is a cross-sectional view of the main parts to explain the structure of a conventional EL display panel, and Figure 2 is an EL display panel according to the present invention.
FIG. 2 is a cross-sectional view of main parts for explaining the structure of a display panel. 1: glass substrate, 2, 6: electrode, 3, 5: dielectric layer, 4: EL layer, 7: base layer made of crystalline insulator.
Claims (1)
該電極表面を含む支持基板表面に結晶性誘電体層
を介して表示媒体層をそなえてなる表示装置にお
いて、前記誘電体層と前記支持基板との間に結晶
性絶縁体よりなる下地層を設けたことを特徴とす
る表示装置。1 Arrange electrodes in a predetermined pattern on a support substrate,
In a display device comprising a display medium layer on a support substrate surface including the electrode surface via a crystalline dielectric layer, a base layer made of a crystalline insulator is provided between the dielectric layer and the support substrate. A display device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7108480A JPS56167296A (en) | 1980-05-27 | 1980-05-27 | Display unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7108480A JPS56167296A (en) | 1980-05-27 | 1980-05-27 | Display unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56167296A JPS56167296A (en) | 1981-12-22 |
| JPS6247357B2 true JPS6247357B2 (en) | 1987-10-07 |
Family
ID=13450301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7108480A Granted JPS56167296A (en) | 1980-05-27 | 1980-05-27 | Display unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56167296A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6486865A (en) * | 1987-09-29 | 1989-03-31 | Matsushita Electric Industrial Co Ltd | Ultrasonic thawer |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62113386A (en) * | 1985-11-11 | 1987-05-25 | 新技術事業団 | Thin film el device and manufacture of the same |
-
1980
- 1980-05-27 JP JP7108480A patent/JPS56167296A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6486865A (en) * | 1987-09-29 | 1989-03-31 | Matsushita Electric Industrial Co Ltd | Ultrasonic thawer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56167296A (en) | 1981-12-22 |
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