JPS625340B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bonding method, and more particularly to a method for bonding electrodes and leads of a semiconductor device using a tape carrier for a semiconductor device, such as a metal single layer tape carrier or a multilayer tape carrier made of metal and insulating tape.

Generally, when assembling a semiconductor device using a tape carrier, the tape carrier is designed so that the lead groups formed on the tape carrier are arranged in advance at positions corresponding to the semiconductor device electrodes, and the tape carrier is assembled by thermocompression bonding or weld bonding. Perform the joining. This thermocompression bonding or weld bonding is performed by pressing the heater chip after aligning the tape carrier leads and the semiconductor device electrodes. Conventionally, the relative distance between the aligned leads and electrodes is brought together. I'm going. During this alignment, since the guides of conventional tape carriers are flat, alignment with the tape carrier leads is necessary to prevent the diced semiconductor devices in wafer form from coming into contact with the bonded semiconductor devices. The distance between the semiconductor devices to be used cannot be made sufficiently close, making alignment extremely difficult, and assembly failures often occur due to misalignment of semiconductor device electrodes and leads.

Therefore, in order to eliminate this drawback, we developed a semiconductor device manufacturing equipment in which a bending point is provided in the guide and a feed guide portion having an elevation angle of approximately 15 degrees. However, when a conventional tape carrier is used in this manufacturing equipment, The elastic properties of the tape carrier caused bending at the bent portion of the tape guide, which also caused contact between the semiconductor devices, resulting in scratches on the surface of the semiconductor devices.

An object of the present invention is to provide a ponding method using a tape carrier for a semiconductor device that eliminates the above-mentioned drawbacks, enables accurate alignment of the tape carrier lead and the semiconductor device electrode, and enables stable assembly of the semiconductor device. It is to provide.

A feature of the present invention is a tape carrier in which lead groups corresponding to electrode groups of a semiconductor device are successively provided at regular intervals in the longitudinal direction;
In the bonding method in which electrode groups of the semiconductor device are sequentially connected by heater chips, the tape carrier has a thickness that extends over the entire width of the tape carrier between one lead group and the adjacent lead group. Linear grooves each having a shape that is removed halfway in the direction are formed, and the tape guide that guides the tape carrier when it is fed has a horizontal portion having the same length as the interval between the linear grooves and the Inclined portions extending linearly upward at a certain angle from both ends of the horizontal portion are provided, and the tape carrier is fed along the tape guide, and the horizontal portion of the tape guide is connected to the tape carrier. Each of the linear grooves is positioned at the bent portion formed by both inclined portions, so that the tape carrier is in contact with the entire length of the horizontal portion and both inclined portions of the tape guide, and in this state, the horizontal portion This is a bonding method in which a heater chip is used to connect a group of leads provided on a portion of a tape carrier that is in contact with a portion of the tape carrier with a group of electrodes of a semiconductor device located below the lead group.

That is, in the present invention, a groove is provided across the entire width of the tape carrier between the lead groups corresponding to the semiconductor device electrode portions so that the tape carrier can be easily bent and the lead portions are not bent. It is characterized by absorbing everything.

As a result, the leads of the tape carrier can be held parallel to the semiconductor device, and the distance between the tape carrier and the semiconductor device can be sufficiently shortened to prevent bending, thereby enabling accurate positioning.

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic sectional view of the vicinity of a tape guide of a bonder used when using the tape carrier of the present invention.

To explain the operation in the figure, first, the tape carrier 3 is fed one unit along the tape guide 1 having the bent portion 7, and at the same time, the semiconductor device 4 is also fed one unit together with the semiconductor device support substrate 5 on the stage 6, and then is bonded by the heater chip 2. Semiconductor device 4 after bonding
is advanced one unit, and at the same time the next tape carrier lead is advanced one unit along the guide. In addition, if the semiconductor device 4'' sent is defective, another semiconductor device is sent as is without bonding.At this time, it is desirable that the leads and the semiconductor device electrode portion be aligned without any gaps. In reality, even if the tape guide has a bent part, it is necessary to leave a gap of at least 100 microns between the semiconductor devices to prevent collision or contact between the semiconductor devices.

Although Figure 1 shows the case where the semiconductor device and the tape carrier are fed in opposite directions, if they are fed in the same direction, the semiconductor device that was not bonded due to a defect and the semiconductor device after bonding are Therefore, a similar phenomenon occurs.

FIG. 2 shows a state in which a tape carrier 3 and semiconductor devices 4, 4' are in contact when a conventional tape carrier is used. As can be seen from this state, in the conventional tape carrier, the tape carrier is bent at the alignment part and the bonding end part, and this bending causes lead misalignment at the alignment part. A phenomenon occurs in which the two come into contact with each other.

Next, the extremely effective effects of the present invention will be explained with reference to the adaptation examples of the present invention shown in FIGS. 3 and 4.

In the figure, a tape carrier 3 is provided with a linear groove 8 coined by half etching or press working. According to the configuration shown in the figure, when the tape carrier 3 is fed in, the groove portion 8 matches the bent portion 7 of the guide 1, and the tape carrier 3 is easily bent at the bent portion 7 of the guide 1.
It is supported along the shape of the guide 1. Therefore, the advantage is that the leads of the tape carrier can be kept parallel to the semiconductor device on the stage, and the distance between the tape carrier and the semiconductor device can be kept close enough to prevent deflection, allowing for accurate alignment before connection. has.

5-6 show plan views of a multi-layer tape carrier and a single-layer tape carrier according to an embodiment of the invention. FIG. 5 shows an embodiment of a metal single-layer tape carrier 3 having linear grooves 8' between the groups of leads 10', and FIG. 6 shows a multi-layer tape carrier 3'.
2A and 2B respectively show embodiments having linear grooves 8.

[Brief explanation of the drawing]

Figure 1 is a schematic sectional view of the tape carrier assembly;
The figure is an assembled sectional view of a conventional tape carrier, FIGS. 3 and 4 are assembled sectional views of a tape carrier showing the method of the present invention, and FIGS. 5 and 6 are plan views of a tape carrier used in an embodiment of the present invention, respectively. be. In Figures 1 to 4, 1 is a tape guide, 2
is the heater chip, 3 is the tape carrier, 4,
4' and 4'' are semiconductor devices, 5 is a semiconductor device support substrate, 6 is a stage, 7 is a guide bending part, and 8 is a linear groove. In Fig. 5, 10' is a 100 micron thick copper tape 3. The inner lead part is formed by etching to a width of 100 microns, and 8' is a linear groove part with a depth of 50 microns formed by half etching.In Figure 6, 3' is a polyimide film with a thickness of 150 microns, and 8 is This is a linear groove 100 microns wide and 75 microns deep formed on a polyimide film by half-etching.

Claims (1)

[Claims] 1. The lead groups of a tape carrier, in which lead groups corresponding to the electrode groups of the semiconductor device are successively provided at regular intervals in the longitudinal direction, and the electrode groups of the semiconductor device are successively connected by a heater chip. In the bonding method, a linear groove portion is formed in the tape carrier between one lead group and an adjacent lead group, extending over the entire width direction of the tape carrier and being removed halfway in the thickness direction. The tape guide that guides the tape carrier when it is fed has a horizontal portion having the same length as the interval between the linear grooves and a straight line extending upward at a certain angle from both ends of the horizontal portion. The tape carrier is fed along the tape guide, and each of the linear grooves is formed at a bend formed by a horizontal portion and both inclined portions of the tape guide. positioning the tape carrier so that the tape carrier is in contact with the entire length of the horizontal portion and both inclined portions of the tape guide;
A bonding method characterized in that, in such a state, a group of leads provided on a portion of the tape carrier in contact with the horizontal portion and a group of electrodes of a semiconductor device located below the lead group are connected by a heater chip.