JPS629234B2 - - Google Patents
Info
- Publication number
- JPS629234B2 JPS629234B2 JP57000627A JP62782A JPS629234B2 JP S629234 B2 JPS629234 B2 JP S629234B2 JP 57000627 A JP57000627 A JP 57000627A JP 62782 A JP62782 A JP 62782A JP S629234 B2 JPS629234 B2 JP S629234B2
- Authority
- JP
- Japan
- Prior art keywords
- powder
- sintered film
- cds
- film
- cdte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Description
本発明はｎ形CdSとｐ形CdTeとのpn接合を用
いた光起電力素子の製造方法に関するものであ
る。
従来、この種の素子の製造法として、支持基板
上に形成された低抵抗で光透過率の良好なｎ形
CdS焼結膜上に、Cd粉末とTe粉末に粘結剤を加
えて混合し、泥状にしたものをスクリーン印刷
し、乾燥した後、窒素雰囲気中で焼成してCdTe
焼結膜を形成するものがあつた。そしてこの方法
においては、Cd粉末とTe粉末を等モル比よりわ
ずかにTe過剰の割合で配合するのが普通であつ
た。
本発明は、これらの方法を採用しながらも、
Cd粉末とTe粉末のモル比を広範囲に変化させ
て、いかなる配合比にした場合に高い変換効率が
得られるかを調べる中で発見した結果に基くもの
で、Cd粉末とTe粉末をモル比にして１対１より
Cd粉が過剰である両者の混合泥状物を使用する
ことを特徴としたものである。本発明による光起
電力素子の製造方法によれば、従来通り、CdTe
焼結膜を比較的安価に得られるという利点等はそ
のまま維持されるのは勿論、従来より高い変換効
率の素子が得られるという利点がある。
以下、本発明の製造方法について、実施例をあ
げて具体的に説明する。
（実施例）
CdS粉末に融剤としてCdCl2を10重量％加え、
それに粘結剤としてプロピレングリコールを加え
て泥状にしたものを、図面に示すようにガラス基
板１上にスクリーン印刷した後、N2雰囲気中に
おいて690℃で20分間焼成することにより、化学
量論比よりCd過剰のｎ形CdS焼結膜２を形成し
た。このようにして得られたｎ形CdS焼結膜の抵
抗率は100〜10-1Ω・cm程度である。このｎ形
CdS焼結膜２上にCd粉末とTe粉末を次表に示す
ようなモル比で配合し、粘結剤としてプロピレン
グリコールの適量を加えて混合し、泥状にしたも
のを、スクリーン印刷し乾燥させた後、N2雰囲
気中において650℃で30分間焼成することによつ
てCdTe焼結膜３を形成した。次に、CdTe焼結
膜３上に微量のアクセプタ不純物を添加した泥状
カーボンをスクリーン印刷して、カーボン膜４を
形成させた後、N2雰囲気中において350℃で30分
間熱処理することにより、カーボン中に含まれて
いるアクセプタ不純物がCdTe焼結膜３内にドー
プした。こうしてｎ形CdS焼結膜２とｐ形CdTe
焼結膜３との間に光起電力効果をもつヘテロ接合
を形成した。次にCdS焼結膜２上およびカーボン
膜４上にそれぞれオーミツク電極５，６を付けた
後、各々の電極５，６からリード線７を引き出し
た。入射光８はCdS焼結膜２側から照射する。
このようにして得られた素子の80mW／cm2のタ
ングステンハロゲン灯光下での真性変換効率を次
表に示す。
表によればCd対Teのモル比は１：１、つまり
等モルよりどちらかにずれた方がよいことがわか
る。さらに、CdとTeはTe過剰よりCd過剰の方
がよいことおよび、変換効率の向上には1.01：１
〜1.10：１の範囲が適切であることがわかる。
The present invention relates to a method for manufacturing a photovoltaic device using a pn junction between n-type CdS and p-type CdTe. Conventionally, as a manufacturing method for this type of device, an n-type device with low resistance and good light transmittance formed on a support substrate has been used.
On the CdS sintered film, Cd powder and Te powder are mixed with a binder and made into a slurry, which is screen printed, dried, and then fired in a nitrogen atmosphere to create a CdS sintered film.
There were some that formed a sintered film. In this method, it was common to mix Cd powder and Te powder in an equimolar ratio with a slight excess of Te. Although the present invention employs these methods,
This is based on the results discovered while changing the molar ratio of Cd powder and Te powder over a wide range and investigating what compounding ratio would yield high conversion efficiency. than one-on-one
This method is characterized by the use of a mixed slurry containing an excess of Cd powder. According to the method for manufacturing a photovoltaic device according to the present invention, CdTe
The advantage of being able to obtain a sintered film at a relatively low cost is of course maintained, and there is also the advantage that an element with higher conversion efficiency than before can be obtained. Hereinafter, the manufacturing method of the present invention will be specifically explained with reference to Examples. (Example) Add 10% by weight of CdCl 2 as a flux to CdS powder,
Propylene glycol was added as a binder to make a slurry, which was screen printed on the glass substrate 1 as shown in the drawing, and then baked at 690°C for 20 minutes in an N2 atmosphere to achieve stoichiometry. An n-type CdS sintered film 2 containing excess Cd was formed. The resistivity of the n-type CdS sintered film thus obtained is about 10 0 to 10 −1 Ω·cm. This n-type
Cd powder and Te powder are blended on the CdS sintered film 2 in the molar ratio shown in the table below, mixed with an appropriate amount of propylene glycol as a binder, and the resulting slurry is screen printed and dried. After that, the CdTe sintered film 3 was formed by firing at 650° C. for 30 minutes in an N 2 atmosphere. Next, muddy carbon added with a small amount of acceptor impurities is screen printed on the CdTe sintered film 3 to form a carbon film 4. After that, the carbon film 4 is heat-treated at 350°C for 30 minutes in an N2 atmosphere. The acceptor impurities contained therein were doped into the CdTe sintered film 3. In this way, the n-type CdS sintered film 2 and the p-type CdTe
A heterojunction with a photovoltaic effect was formed with the sintered film 3. Next, after attaching ohmic electrodes 5 and 6 to the CdS sintered film 2 and the carbon film 4, respectively, lead wires 7 were drawn out from each electrode 5 and 6. The incident light 8 is irradiated from the CdS sintered film 2 side. The intrinsic conversion efficiency of the thus obtained device under 80 mW/cm 2 tungsten halogen lamp light is shown in the following table. According to the table, the molar ratio of Cd to Te is 1:1, that is, it is better to deviate from equimolar to either side. Furthermore, it is better to have an excess of Cd than an excess of Te, and to improve the conversion efficiency, the ratio of Cd and Te is 1.01:1.
It can be seen that a range of ~1.10:1 is appropriate.
【表】【table】
【表】
以上の説明から明らかなように、本発明の方法
によれば、高変換効率の光起電力素子を得ること
ができるため、その実用上の価値は大なるものが
ある。[Table] As is clear from the above description, according to the method of the present invention, a photovoltaic element with high conversion efficiency can be obtained, and therefore, it has great practical value.
図面は本発明の製造方法により得られる光起電
力素子の一例を示す断面図である。
１……ガラス基板、２……CdS焼結膜、３……
CdTe焼結膜、４……カーボン膜、５……オーミ
ツク電極、６……オーミツク電極、７……リード
線。
The drawing is a sectional view showing an example of a photovoltaic device obtained by the manufacturing method of the present invention. 1...Glass substrate, 2...CdS sintered film, 3...
CdTe sintered film, 4...carbon film, 5...ohmic electrode, 6...ohmic electrode, 7...lead wire.
Claims (1)
半導体の焼結膜を形成し、さらにその上にCd粉
末とTe粉末に粘結剤を加えて混合した泥状物を
スクリーン印刷し、さらに不活性雰囲気中におい
て焼成してCdTe焼結膜を形成し、しかる後、前
記２つの焼結膜上に電極を形成して光起電力素子
を製造するに際し、前記泥状物としてCd粉とTe
粉のモル比が1.01：１〜1.10：１の間にあるもの
を使用することを特徴とする光起電力素子の製造
方法。1 Form a sintered film of CdS or a compound semiconductor containing CdS on a supporting substrate, screen print a slurry mixture of Cd powder and Te powder with a binder on top, and then print in an inert atmosphere. A CdTe sintered film is formed by sintering in the sintered film, and then an electrode is formed on the two sintered films to produce a photovoltaic device.
A method for producing a photovoltaic device, characterized in that a powder having a molar ratio of 1.01:1 to 1.10:1 is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000627A JPS58118168A (en) | 1982-01-07 | 1982-01-07 | Method for manufacturing photovoltaic elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000627A JPS58118168A (en) | 1982-01-07 | 1982-01-07 | Method for manufacturing photovoltaic elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58118168A JPS58118168A (en) | 1983-07-14 |
| JPS629234B2 true JPS629234B2 (en) | 1987-02-27 |
Family
ID=11478959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57000627A Granted JPS58118168A (en) | 1982-01-07 | 1982-01-07 | Method for manufacturing photovoltaic elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58118168A (en) |
-
1982
- 1982-01-07 JP JP57000627A patent/JPS58118168A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58118168A (en) | 1983-07-14 |
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