JPS6311658B2 - - Google Patents
Info
- Publication number
- JPS6311658B2 JPS6311658B2 JP18646984A JP18646984A JPS6311658B2 JP S6311658 B2 JPS6311658 B2 JP S6311658B2 JP 18646984 A JP18646984 A JP 18646984A JP 18646984 A JP18646984 A JP 18646984A JP S6311658 B2 JPS6311658 B2 JP S6311658B2
- Authority
- JP
- Japan
- Prior art keywords
- glass mask
- wafer
- contact
- support member
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7035—Proximity or contact printers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
[発明の分野]
本発明は、密着焼付に用いられるガラスマスク
に関し、特に半導体製造用のフオトマスクとして
好適な密着式ガラスマスクに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to a glass mask used for contact printing, and particularly to a contact type glass mask suitable as a photomask for semiconductor manufacturing.
[発明の背景]
トランジスタ、IC、LSIおよびVLSI等の半導
体装置の製造に際し、しばしば密着式のガラスマ
スクが使用されている。この場合、マスクとウエ
ハの密着方式として、第2図に示すようにガラス
マスク1、マスク支持台2、およびウエハチヤツ
ク4等で囲まれた領域5を真空化(減圧)してガ
ラスマスク1をウエハ3の側に引付ける方法(真
空密着方式)、或いはガラスマスク1を固定しウ
エハチヤツク3を押し上げてウエハ3をガラスマ
スク1に押し付ける方法(プレス方式)が知られ
ている。[Background of the Invention] Close-contact glass masks are often used in manufacturing semiconductor devices such as transistors, ICs, LSIs, and VLSIs. In this case, in order to bring the mask and wafer into close contact, as shown in FIG. 3 side (vacuum contact method), or a method of fixing the glass mask 1 and pushing up the wafer chuck 3 to press the wafer 3 against the glass mask 1 (press method).
ところで、前者の真空密着方式の場合、ガラス
マスク1は領域5の真空化により変形してウエハ
3に密着するが、この変形は、微視的に第3図ま
たは第4図に示すようになる。すなわち、第2図
の状態でのガラスマスク1とウエハ3との間隔が
大きい場合は、第3図のようにウエハ周辺が密着
不良となり、一方、マスク1とウエハ2との間隔
が小さい場合には、第4図のようにウエハ中心付
近が密着不良となる。また、後者のプレス方式の
場合も、ウエハチヤツク4の押し上げ量やマスク
1とウエハ3との平行度誤差等により、同様に密
着不良が生じる。このような密着不良は、パター
ン線幅のばらつきの原因となつており、このよう
な傾向はウエハの大きさが5インチ以上になると
特に顕著になる。さらに、ガラスマスク1の変形
は、マスク1とウエハ3との寸法誤差いわゆるパ
ターンずれの原因ともなる。 By the way, in the case of the former vacuum contact method, the glass mask 1 is deformed by vacuuming the region 5 and comes into close contact with the wafer 3, but this deformation microscopically becomes as shown in FIG. 3 or 4. . That is, if the distance between the glass mask 1 and the wafer 3 in the state shown in FIG. 2 is large, there will be poor adhesion around the wafer as shown in FIG. 3, while if the distance between the mask 1 and the wafer 2 is small, As shown in FIG. 4, poor adhesion occurs near the center of the wafer. Furthermore, in the case of the latter press method, poor adhesion similarly occurs due to the amount of pushing up of the wafer chuck 4, the parallelism error between the mask 1 and the wafer 3, and the like. Such poor adhesion causes variations in pattern line width, and this tendency becomes particularly noticeable when the wafer size is 5 inches or more. Furthermore, the deformation of the glass mask 1 also causes a dimensional error, so-called pattern shift, between the mask 1 and the wafer 3.
したがつて、従来のガラスマスクを使用すると
すれば、半導体素子を設計する際、上記のパター
ン線幅のばらつきやパターンずれを見込まなけれ
ばならず、これが半導体素子を小型化してIC等
の集積度を上げていくための大きな障害となつて
いた。 Therefore, if conventional glass masks are used, it is necessary to take into account the above-mentioned variation in pattern line width and pattern shift when designing semiconductor devices, which reduces the size of semiconductor devices and increases the integration density of ICs, etc. This has become a major obstacle to raising the bar.
[発明の目的]
本発明は、上述の欠点を解消し、密着時の変形
が少なく、したがつて、より密着性が良く、かつ
より微細なパターニングが可能な密着式ガラスマ
スクを提供することを目的とする。[Object of the Invention] The present invention aims to eliminate the above-mentioned drawbacks, to provide a close-contact type glass mask that is less deformed during close contact, has better adhesion, and is capable of finer patterning. purpose.
[実施例の説明]
以下図面を用いて本発明の実施例を説明する。
なお、従来例と共通または対応する部分について
は同一の符号で表わす。[Description of Examples] Examples of the present invention will be described below with reference to the drawings.
Note that parts common or corresponding to those of the conventional example are represented by the same reference numerals.
第1図は、本発明の一実施例に係るガラスマス
クを真空密着方式の半導体製造装置に実装した状
態を示す。同図のガラスマスク1は第2〜4図の
ものに対し、ガラスマスク本体11をマスク保持
台2の開口部より小さめに構成し、その周辺部を
変形容易な支持部材12で囲んだことを特徴とし
ている。 FIG. 1 shows a state in which a glass mask according to an embodiment of the present invention is mounted in a vacuum contact type semiconductor manufacturing apparatus. The glass mask 1 shown in the same figure is different from the ones shown in FIGS. 2 to 4 in that the glass mask main body 11 is configured to be smaller than the opening of the mask holding base 2, and its peripheral part is surrounded by a support member 12 that is easily deformable. It is a feature.
支持部材12としては、例えばゴム、ポリウレ
タン等のゴムまたは樹脂製のものが好適である。 The support member 12 is preferably made of rubber such as rubber or polyurethane, or resin.
第1図において、密着焼付けを行なう場合、領
域5を真空化すると、大気圧によりガラスマスク
本体11にはウエハ3側へ近付こうとする力が働
く。しかし、この場合は支持部材12が弾性変形
するため、ガラスマスク本体11は変形すること
なくウエハ3に密着させられる。 In FIG. 1, when performing contact baking, when the area 5 is evacuated, a force is exerted on the glass mask body 11 due to atmospheric pressure to move it closer to the wafer 3 side. However, in this case, since the support member 12 is elastically deformed, the glass mask main body 11 is brought into close contact with the wafer 3 without being deformed.
また、第1図のガラスマスク1をプレス方式の
半導体製造装置に用いて密着焼付けを行なう場
合、ウエハチヤツク4を下から突き上げるため、
ガラスマスク1は第2〜4図とは逆方向に変形す
るが、この場合にも支持部材12の弾性変形によ
りガラスマスク本体11の変形を防止してウエハ
3に密着させることができる。 In addition, when the glass mask 1 shown in FIG. 1 is used in a press-type semiconductor manufacturing apparatus to perform contact baking, the wafer chuck 4 is pushed up from below, so that
Although the glass mask 1 deforms in the opposite direction to that shown in FIGS. 2 to 4, even in this case, the elastic deformation of the support member 12 prevents deformation of the glass mask body 11 and allows it to be brought into close contact with the wafer 3.
[実施例の変形例]
なお、上述の実施例においては、ガラスマスク
本体11をマスク保持台2の開口部より小さめに
構成しているが、従来通りの形状のままで支持部
材12を取付け、支持部材12の厚み方向の変形
によつてガラスマスク本体11とウエハ3とを密
着させるようにしてもよい。また、上述において
は、真空密着方式の半導体製造装置用として気密
を確保するため、ガラスマスク本体11の周辺部
全周を支持部材12で囲むようにしたが、前記プ
レス方式の半導体製造装置用のガラスマスクの場
合、支持部材12はウエハチヤツク押し上げ前後
のガラスマスクの姿勢を保持し得る程度の量およ
び位置に取付ければよく、例えば数〜10数mm長程
度の支持部材を周辺部にほぼ等間隔で複数個取付
けるようにしてもよい。[Modified Example of Embodiment] In the above-described embodiment, the glass mask main body 11 is configured to be smaller than the opening of the mask holding base 2, but the supporting member 12 can be attached while maintaining the conventional shape. The glass mask main body 11 and the wafer 3 may be brought into close contact by deforming the support member 12 in the thickness direction. Furthermore, in the above description, the entire periphery of the glass mask body 11 is surrounded by the support member 12 in order to ensure airtightness for use in a vacuum contact type semiconductor manufacturing apparatus. In the case of a glass mask, the support members 12 may be attached in an amount and position that is sufficient to maintain the posture of the glass mask before and after the wafer chuck is pushed up. For example, support members with a length of several to several tens of millimeters may be installed at approximately equal intervals around the periphery. It is also possible to install more than one.
[発明の効果]
以上のように、本発明によれば、ガラスマスク
本体の周辺部に変形容易な支持部材を取付けると
いう簡単な構造で、ガラスマスク本体の変形を防
ぎ、ウエハのパターン線幅ばらつきやパターンず
れを抑えることができる。また、このため、より
微細なパターニングが可能となる。[Effects of the Invention] As described above, according to the present invention, with a simple structure in which an easily deformable support member is attached to the periphery of the glass mask main body, deformation of the glass mask main body can be prevented and pattern line width variations on the wafer can be reduced. and pattern deviations can be suppressed. Furthermore, this allows finer patterning.
第1図は、本発明の一実施例に係るガラスマス
クを真空密着方式の半導体製造装置に実装しウエ
ハに密着させた様子を示す断面図、第2図は、従
来のガラスマスクを実装した真空密着方式の半導
体製造装置の断面図、第3および4図は、それぞ
れ第2図の装置においてガラスマスクをウエハに
密着させた様子を示す断面図である。
1…ガラスマスク、2…マスク保持台、3…ウ
エハ、4…ウエハチヤツク、5…真空化領域、1
1…ガラスマスク本体、12…支持部材。
FIG. 1 is a sectional view showing a glass mask according to an embodiment of the present invention mounted in a vacuum contact type semiconductor manufacturing equipment and brought into close contact with a wafer. FIGS. 3 and 4 are cross-sectional views of the contact type semiconductor manufacturing apparatus, respectively, showing the state in which the glass mask is brought into close contact with the wafer in the apparatus of FIG. 2. DESCRIPTION OF SYMBOLS 1... Glass mask, 2... Mask holding stand, 3... Wafer, 4... Wafer chuck, 5... Vacuum area, 1
1...Glass mask body, 12...Supporting member.
Claims (1)
て、ガラスマスク本体の周辺部に変形容易な支持
部材を取付け、使用時はこの支持部材を介してガ
ラスマスク本体を支承するようにしたことを特徴
とする密着式ガラスマスク。 2 前記支持部材で前記ガラスマスク本体の周辺
部を取囲み、この支持部材をガラスマスク本体と
感光体との間を真空吸着する際の気密シールとし
て用いるようにしたことを特徴とする特許請求の
範囲第1項記載の密着式ガラスマスク。 3 前記支持部材がゴムまたは弾性変形可能な樹
脂である特許請求の範囲第1項記載の密着式ガラ
スマスク。[Scope of Claims] 1. A glass mask used for contact printing, in which an easily deformable support member is attached to the periphery of the glass mask body, and the glass mask body is supported through this support member during use. A close-contact glass mask that is characterized by: 2. The supporting member surrounds the periphery of the glass mask main body, and the supporting member is used as an airtight seal when vacuum adsorbing is performed between the glass mask main body and the photoreceptor. A close-contact glass mask as described in Scope 1. 3. The close-contact type glass mask according to claim 1, wherein the support member is made of rubber or elastically deformable resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59186469A JPS6165250A (en) | 1984-09-07 | 1984-09-07 | Close-contact glass mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59186469A JPS6165250A (en) | 1984-09-07 | 1984-09-07 | Close-contact glass mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6165250A JPS6165250A (en) | 1986-04-03 |
| JPS6311658B2 true JPS6311658B2 (en) | 1988-03-15 |
Family
ID=16189014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59186469A Granted JPS6165250A (en) | 1984-09-07 | 1984-09-07 | Close-contact glass mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6165250A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0854816A (en) * | 1994-08-11 | 1996-02-27 | Nec Corp | Printing device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4266661B2 (en) * | 2003-02-20 | 2009-05-20 | キヤノン株式会社 | Photomask for near-field exposure |
-
1984
- 1984-09-07 JP JP59186469A patent/JPS6165250A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0854816A (en) * | 1994-08-11 | 1996-02-27 | Nec Corp | Printing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6165250A (en) | 1986-04-03 |
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