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JPS631271B2 - - Google Patents
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JPS631271B2 - - Google Patents

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Publication number
JPS631271B2
JPS631271B2 JP56079488A JP7948881A JPS631271B2 JP S631271 B2 JPS631271 B2 JP S631271B2 JP 56079488 A JP56079488 A JP 56079488A JP 7948881 A JP7948881 A JP 7948881A JP S631271 B2 JPS631271 B2 JP S631271B2
Authority
JP
Japan
Prior art keywords
sic
sintered body
powder
silicon carbide
electrical discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56079488A
Other languages
Japanese (ja)
Other versions
JPS57196770A (en
Inventor
Takeshi Yoshioka
Akira Doi
Yoshihiko Doi
Naoharu Fujimori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP56079488A priority Critical patent/JPS57196770A/en
Publication of JPS57196770A publication Critical patent/JPS57196770A/en
Publication of JPS631271B2 publication Critical patent/JPS631271B2/ja
Granted legal-status Critical Current

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Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は放電加工を利用した炭化硅素部材の製
造方法に関するものである。 炭化硅素(以下SiCと称す)焼結体は耐酸化性
に優れ、熱膨張率が小さく高温強度が高い材料と
して注目され、近年このSiC焼結体をタービンエ
ンジンのブレードやノズルあるいは熱交換器部材
などの高温構造材料として使用する為の研究開発
が活発に行われている。 しかし、このSiC焼結体は通常、粉末治金法に
よつて作られるため、焼結体としては複雑形状の
部材を得ることは難しく、寸法や面精度も精密な
ものは得難く、従つて焼結後研削加工等の機械加
工を加える事によつて所定形状、精度の部材を得
ているのが実情である。しかし周知の如く、SiC
は高硬度物質でありしかも脆い材料であるため、
機械加工が困難であり、その加工に多大な時間を
要し、また比較的単純な形状のものしか得られな
い。更に加工によつてクラツクが発生し易く製造
歩留が悪い。またタービンブレードの如き薄肉の
部品についてはかゝる機械加工によつても製作不
可能なものもある。 このような加工技術上の制約がせつかく種々の
優れた特性を有するSiCの応用拡大の大きな妨げ
の一つとなつている。複雑形状の部材を製造する
方法として機械加工の他にレーザー加工、アーク
放電又は放電加工が知られているが、前者は薄物
の穿孔的加工に限られ厚物、複雑形状には極めて
困難であり、また放電加工についてはSiCは電気
伝導性が悪いために高電圧コロナ放電により1mm
φ以下の小孔をあけることができるのみか、ある
いはアーク放電が可能であつてもその加工能率は
極めて悪く放電的加工では多大の時間がかゝり一
般的には採用されなかつた。 本発明者らはSiC焼結体の放電加工を容易に行
う方法について種々検討した結果、SiC本来の優
れた特性を維持しつゝ放電加工が容易に可能な程
度に電気伝導性を附与する方法を見出した。 常識的に、SiCに電気伝導性の物質を多量に添
加すれば放電加工性が上昇することは容易に想像
がつく。しかしこの場合、殆んどの場合SiC自体
の性質に大きな影響を与えてしまうのが通常であ
つた。 例えば、良導体であるCuとかNi等の金属を添
加した場合、これらの金属はSiCとの濡れ性が悪
く焼結が充分には行えず高強度が得られず勿論硬
度は著しく低下する。一方Si3N4、Al2O3等の添
加の場合は強度は充分であるが電気伝導度の向上
はなく放電加工性の向上は不可能である。 そこで、本発明者らはSiCの性質を維持しつゝ
電気伝導度を向上せしめる添加物質を検討した結
果、a、a、a族元素の炭化物、窒化物、
硼化物、酸化物およびこれらの2種以上の化合物
ならびにAl4C3より選ばれた1種以上を添加すれ
ば良いことを見出した。上記a、a、a族
元素の各種化合物は周知の如く高硬度物質であり
高温での強度低下も少ない物質であり、互いに広
い範囲の固溶体を作りその固溶体の性質も各々と
大差がない。又、Al4C3も高温での強度低下が少
ない。しかしこれら添加物質は高温強度が高いと
は云つてもSiCと較べると低いレベルにあり耐酸
化性において劣る為これらの物質を添加するとお
のずからSiCの高温特性は劣化する。それ故、そ
の添加量はより少い量で制限すべきである。 本発明者らはこの点について試作実験を行なつ
たところ驚くべきことにこれらの物質を容積比に
して0.5%以上添加すればSiC焼結体の電気伝導度
が急激に上昇し、10-2Ω-1cm-1以上となると放電
加工が極めて容易になることを見出した。第1図
はその一例としてSiCにTaNを添加した際の添加
量による焼結体の電気伝導度の変化を示す。図中
の理論値2は下記の式で表わされるMaxwellの
方程式に基いて計算したものである。1は実測値
である。 σTptal=σSiC×〔σTaN+2σSiC−2VTaN(σSiC
σTaN)〕/〔σTaN−2σSiC+VTaN(σSiC−σTaN)〕
ただし、σTptal,σSiC,σTaNは各々焼結体、SiC、
TaNの電気伝導度、VTaNはTaNの容積比を示
す。 尚、本発明におけるSiC焼結体においては添加
物質は焼結後も第2相として分散した組織となる
がこのようにSiC焼結体の電気伝導度1が理論値
2に比して極めて高いのは次の2通りの理由によ
るものと考えられる。 (1) SiC中のマトリツクス中に分散された第2相
粒子の全て又は1部がマトリツクスのSiC粒子
周囲に拡散及び反応して導電性の良い複合相が
形成されるが、この複合相が連続することによ
りSiC焼結体の導電性が向上する。 (2) SiCのマトリツクス中に分散された第2相粒
子の容積比が25%を越える場合にはその第2相
粒子同志が互いに接触することによりSiC焼結
体の導電性が向上する。 上記電気伝導性の理由のうち第2相粒子の容積
比が25%以下の場合には主として上記(1)のみの効
果が、また容積比が25%を越える場合には上記(1)
+(2)の効果が考えられる。 尚この第2相粒子の好ましい添加量は容積比で
0.5%以上30%以下である。その理由は0.5%以下
の添加量ではSiC焼結体の電気伝導度が充分では
なく放電加工が効率よく行えないこと、また30%
以上の添加量ではSiC焼結体の高温強度が急激に
低下することになる。なお、注意すべきことは、
この放電加工性の良いSiC焼結体を製造するにあ
たり、SiC粉末及び添加物質の平均粒子径が共に
1μm以下であることが好ましい。何故なら平均
粒子径が1μm以上であると混合時に添加物質が
均一に分散しにくく、従つて焼結時に均一に導電
性の複合相が形成せずSiC焼結体の電気伝導度が
部材全体で均一に向上せず放電加工が円滑に実施
することが困難である。なお焼結は、通常の粉末
成型体の焼結でも加圧焼結するホツトプレス、熱
間静圧成型のいずれでも本発明の目的を達するこ
とができる。 次に実施例によつて詳細に説明する。 実施例 1 平均粒径0.8μmのSiC粉末に第1表に示す容積
比の粒度0.5μmのTaN及びTiCを添加後これを充
分に混合した後、200Kg/cm2の圧力、1700℃×30
分で加圧焼結したSiC焼結体について電気伝導度
を測定し、更に放電加工性の容易さを比較した。
その結果を第1表に示す。放電加工条件は加工電
流0.2A、パルス幅は1.3μsである。表中、放電加
工性可能とは上記条件で放電加工が可能という意
味であり、加工能率の「悪い」の意味は放電加工
能率が著しく悪いという事であり、「良」は加工
が順次効率よく円滑に進んだことを示す。TiC40
%添加のものは加工後その製品を調べたところ部
分的にチツピングが生じており、強度が可成り低
い事を示していた。
The present invention relates to a method of manufacturing a silicon carbide member using electrical discharge machining. Sintered silicon carbide (hereinafter referred to as SiC) has attracted attention as a material with excellent oxidation resistance, low coefficient of thermal expansion, and high strength at high temperatures. Research and development is being actively conducted to use it as a high-temperature structural material such as. However, since this SiC sintered body is usually made by powder metallurgy, it is difficult to obtain a sintered body with a complex shape, and it is difficult to obtain one with precise dimensions and surface accuracy. The reality is that parts with a predetermined shape and precision are obtained by adding machining such as grinding after sintering. However, as is well known, SiC
is a highly hard and brittle material,
Machining is difficult and requires a large amount of time, and only relatively simple shapes can be obtained. Furthermore, cracks are likely to occur during processing, resulting in poor manufacturing yield. Furthermore, some thin-walled parts such as turbine blades cannot be manufactured even by such machining. These limitations in processing technology are one of the major obstacles to expanding the applications of SiC, which has a variety of excellent properties. In addition to machining, laser machining, arc discharge machining, and electrical discharge machining are known as methods for manufacturing components with complex shapes, but the former is limited to drilling of thin materials and is extremely difficult to produce thick materials with complex shapes. Also, regarding electric discharge machining, SiC has poor electrical conductivity, so high voltage corona discharge
It is only possible to make small holes of φ or less, or even if arc discharge is possible, the machining efficiency is extremely poor, and electric discharge machining takes a lot of time, so it has not been generally adopted. As a result of various studies on methods for easily performing electrical discharge machining of SiC sintered bodies, the present inventors found that while maintaining the original excellent characteristics of SiC, electrical conductivity is imparted to a degree that enables easy electrical discharge machining. I found a way. With common sense, it is easy to imagine that adding a large amount of electrically conductive material to SiC will improve electrical discharge machinability. However, in most cases, the properties of SiC itself were usually greatly affected. For example, when metals such as Cu and Ni, which are good conductors, are added, these metals have poor wettability with SiC and cannot be sintered sufficiently, resulting in a failure to obtain high strength and, of course, significantly lowering the hardness. On the other hand, when Si 3 N 4 , Al 2 O 3 and the like are added, the strength is sufficient, but there is no improvement in electrical conductivity and it is impossible to improve electrical discharge machinability. Therefore, the present inventors investigated additive substances that improve the electrical conductivity while maintaining the properties of SiC, and found that carbides, nitrides, and
It has been found that it is sufficient to add one or more selected from borides, oxides, compounds of two or more thereof, and Al 4 C 3 . As is well known, the various compounds of Group A, A, and A elements are highly hard materials and exhibit little strength loss at high temperatures, and they form solid solutions with each other over a wide range, and the properties of the solid solutions are not significantly different from each other. Furthermore, Al 4 C 3 also exhibits little strength loss at high temperatures. However, although these additive substances have high high-temperature strength, they are at a lower level than SiC and have inferior oxidation resistance, so adding these substances naturally deteriorates the high-temperature properties of SiC. Therefore, its addition should be limited to smaller amounts. The present inventors conducted a prototype experiment on this point and surprisingly found that if 0.5% or more of these substances were added by volume, the electrical conductivity of the SiC sintered body increased rapidly, reaching 10 -2 It has been found that electrical discharge machining becomes extremely easy when the resistance is Ω −1 cm −1 or more. As an example, FIG. 1 shows the change in electrical conductivity of a sintered body depending on the amount of TaN added to SiC. The theoretical value 2 in the figure is calculated based on Maxwell's equation expressed by the following formula. 1 is an actual measurement value. σ Tptal = σ SiC × [σ TaN +2σ SiC −2V TaNSiC
σ TaN )] / [σ TaN −2σ SiC +V TaNSiC −σ TaN )]
However, σ Tptal , σ SiC , and σ TaN are sintered bodies, SiC, and σ TaN, respectively.
Electrical conductivity of TaN, V TaN indicates the volume ratio of TaN. In addition, in the SiC sintered body of the present invention, the additive substance remains in a dispersed structure as a second phase even after sintering, but the electrical conductivity 1 of the SiC sintered body is extremely high compared to the theoretical value 2. This is thought to be due to the following two reasons. (1) All or part of the second phase particles dispersed in the matrix in SiC diffuse and react around the SiC particles in the matrix to form a composite phase with good conductivity, but this composite phase is continuous. This improves the conductivity of the SiC sintered body. (2) When the volume ratio of the second phase particles dispersed in the SiC matrix exceeds 25%, the second phase particles come into contact with each other, thereby improving the conductivity of the SiC sintered body. Among the reasons for electrical conductivity mentioned above, if the volume ratio of the second phase particles is 25% or less, only the effect of (1) above is mainly effective, and if the volume ratio exceeds 25%, the effect of (1) above is the main reason.
The effect of +(2) is considered. The preferable addition amount of the second phase particles is as follows in terms of volume ratio:
It is 0.5% or more and 30% or less. The reason for this is that if the amount added is less than 0.5%, the electrical conductivity of the SiC sintered body is insufficient and electrical discharge machining cannot be performed efficiently.
If the amount added is above, the high temperature strength of the SiC sintered body will decrease rapidly. Please note that:
In manufacturing this SiC sintered body with good electrical discharge machinability, the average particle diameter of the SiC powder and the additive material are both
It is preferably 1 μm or less. This is because if the average particle size is 1 μm or more, it is difficult for the additive to be dispersed uniformly during mixing, and therefore a uniformly conductive composite phase is not formed during sintering, resulting in a decrease in the electrical conductivity of the SiC sintered body throughout the member. It is difficult to perform electrical discharge machining smoothly because the improvement is not uniform. Note that the object of the present invention can be achieved by sintering by any of the usual sintering of a powder compact, hot press sintering under pressure, and hot static pressure molding. Next, a detailed explanation will be given with reference to examples. Example 1 After adding TaN and TiC with a particle size of 0.5 μm in the volume ratio shown in Table 1 to SiC powder with an average particle size of 0.8 μm and thoroughly mixing them, the mixture was heated at a pressure of 200 Kg/cm 2 at 1700°C
The electrical conductivity was measured for SiC sintered bodies that were pressure sintered in minutes, and the ease of electrical discharge machining was compared.
The results are shown in Table 1. The electrical discharge machining conditions were a machining current of 0.2 A and a pulse width of 1.3 μs. In the table, "possible electrical discharge machining" means that electrical discharge machining is possible under the above conditions, "poor" in machining efficiency means that the electrical discharge machining efficiency is extremely poor, and "good" means that machining is sequentially efficient. Indicates that things went smoothly. TiC40
When the product was examined after processing, it was found that chipping had occurred partially, indicating that the strength was quite low.

【表】 実施例 2 平均粒径0.8μmのSiC粉末に第2表に示す容積
比でTiB2及びHfNの0.6μm粒度の粉末を添加し
充分混合したのち成形し、1700℃の温度、窒素分
圧5Kg/cm2の下で焼結したSiC焼結体について、
1000℃における抗折強度を測定した。その結果を
第2表に示す。なお抗折強度は10mmスパン、荷重
速度0.5mm/minの条件下で測定したものである。
[Table] Example 2 TiB 2 and HfN powders with a particle size of 0.6 μm were added to SiC powder with an average particle size of 0.8 μm in the volume ratio shown in Table 2, thoroughly mixed, and then molded at a temperature of 1700°C and a nitrogen content. Regarding the SiC sintered body sintered under a pressure of 5Kg/ cm2 ,
The bending strength at 1000°C was measured. The results are shown in Table 2. Note that the bending strength was measured under the conditions of a 10 mm span and a loading rate of 0.5 mm/min.

【表】【table】

【表】 これでわかるように添加量40%になると抗折強
度が急激に低下する。放電加工性については、
TiB2、HfNいずれも0.5%以上で効率よく放電加
工が可能であり、HfN40%ではチツピングが生
じて良好な形状の加工品ができなかつた。 実施例 3 平均粒径0.5μmのSiC粉末に第3表に示す各種
添加物の粉末(粒度0.1〜0.9μm)を容積比で3
%添加混合したのち、圧力200Kg/cm2、温度、時
間が1700℃、30分の条件下で加圧焼結して得られ
たSiC焼結体について電気伝導度を測定し実施例
1と同じ条件で放電加工性の良否を調べた。結果
を第3表に示す。第3表に示す焼結体は放電加工
性については全て良好であつた。また加工後の外
観も欠け、チツピングなく良好であつた。
[Table] As can be seen from this table, the bending strength decreases rapidly when the amount added is 40%. Regarding electrical discharge machinability,
Efficient electrical discharge machining was possible with both TiB 2 and HfN at 0.5% or more, but with 40% HfN chipping occurred and a machined product with a good shape could not be obtained. Example 3 Powders of various additives shown in Table 3 (particle size 0.1 to 0.9 μm) were added to SiC powder with an average particle size of 0.5 μm at a volume ratio of 3
% addition and mixing, the electrical conductivity of the obtained SiC sintered body was measured by pressure sintering under the conditions of a pressure of 200 Kg/cm 2 and a temperature of 1700°C for 30 minutes, the same as in Example 1. The quality of electrical discharge machinability was examined under various conditions. The results are shown in Table 3. All of the sintered bodies shown in Table 3 had good electrical discharge machinability. The appearance after processing was also good with no chips or chips.

【表】【table】

【表】 実施例 4 SiC粉末及び添加物粉末の各々の平均粒径を第
4表に示す如く変化させて、実施例3と同じ条件
で焼結を行い、その焼結体の電気伝導度及び放電
加工性の良否を調査した。添加物の量はいずれも
3容量%である。その結果を第4表に示す。
[Table] Example 4 Sintering was carried out under the same conditions as in Example 3, with the average particle diameters of the SiC powder and additive powder changed as shown in Table 4, and the electrical conductivity and The quality of electrical discharge machinability was investigated. The amount of additives was 3% by volume in each case. The results are shown in Table 4.

【表】【table】

【表】 ○:放電加工性良好
△:放電加工は可能であるが不安定
[Table] ○: Good electrical discharge machining performance △: Electric discharge machining is possible but unstable

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の内容を説明するための図で、
SiCにTaNを添加した場合の添加量と電気伝導度
の関係を示す図である。 1:実測値、2:理論計算値。
FIG. 1 is a diagram for explaining the content of the present invention.
FIG. 3 is a diagram showing the relationship between the amount of TaN added to SiC and the electrical conductivity. 1: Actual measurement value, 2: Theoretical calculation value.

Claims (1)

【特許請求の範囲】 1 a、a、a族元素の炭化物、窒化物、
硼化物、酸化物及びこれらの2種以上の化合物な
らびにAl4C3からなる群より選択した少なくとも
1種からなる粉末を容積比で0.5〜30%の割合で
炭化硅素粉末に添加混合し、この混合粉末を加圧
成型及び焼結または加圧焼結して焼結体とし、こ
れを放電加工によつて所定形状にすることを特徴
とする炭化硅素部材の製造方法。 2 上記炭化硅素粉末および添加材料粉末はそれ
ぞれ平均粒径1μm以下であることを特徴とする
特許請求の範囲第1項に記載の炭化硅素部材の製
造方法。 3 上記焼結体は、10-2Ω-1cm-1以上の電気伝導
度を有することを特徴とする特許請求の範囲第1
項または第2項に記載の炭化硅素部材の製造方
法。
[Claims] 1. Carbides and nitrides of group a, group a, and a elements,
A powder consisting of at least one selected from the group consisting of borides, oxides, compounds of two or more of these, and Al 4 C 3 is added to and mixed with silicon carbide powder at a volume ratio of 0.5 to 30%. 1. A method for manufacturing a silicon carbide member, comprising: press-molding and sintering a mixed powder, or press-sintering a sintered body to form a sintered body, and forming the sintered body into a predetermined shape by electrical discharge machining. 2. The method for manufacturing a silicon carbide member according to claim 1, wherein the silicon carbide powder and the additive material powder each have an average particle size of 1 μm or less. 3. Claim 1, wherein the sintered body has an electrical conductivity of 10 -2 Ω -1 cm -1 or more.
A method for manufacturing a silicon carbide member according to item 1 or 2.
JP56079488A 1981-05-25 1981-05-25 Silicon carbide member and manufacture Granted JPS57196770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56079488A JPS57196770A (en) 1981-05-25 1981-05-25 Silicon carbide member and manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56079488A JPS57196770A (en) 1981-05-25 1981-05-25 Silicon carbide member and manufacture

Publications (2)

Publication Number Publication Date
JPS57196770A JPS57196770A (en) 1982-12-02
JPS631271B2 true JPS631271B2 (en) 1988-01-12

Family

ID=13691279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56079488A Granted JPS57196770A (en) 1981-05-25 1981-05-25 Silicon carbide member and manufacture

Country Status (1)

Country Link
JP (1) JPS57196770A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123543A (en) * 1982-12-29 1984-07-17 信越化学工業株式会社 Medium for crushing ceramics
JPS61101464A (en) * 1984-02-21 1986-05-20 イビデン株式会社 Procisely processed article of silicon carbide and manufacture
JPH0777986B2 (en) * 1985-01-31 1995-08-23 京セラ株式会社 Manufacturing method of silicon carbide sintered body
JPS6246964A (en) * 1985-08-21 1987-02-28 黒崎窯業株式会社 Anticorrosive silicon carbide composite sintered body
JPS62260774A (en) * 1986-05-01 1987-11-13 新日本製鐵株式会社 Non-oxide base composite ceramic sintered body
JPH089505B2 (en) * 1986-10-29 1996-01-31 京セラ株式会社 Conductive silicon carbide sintered body and method for producing the same
JPS63230572A (en) * 1987-03-16 1988-09-27 黒崎窯業株式会社 Acid-resistant and alkali-resistant electroconductive member
JP2548191B2 (en) * 1987-05-26 1996-10-30 日本電装株式会社 Method for producing non-oxide ceramics
DE3733730C1 (en) * 1987-10-06 1988-10-27 Feldmuehle Ag Pairing of sliding or sealing elements and process for their production

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4327186A (en) * 1980-06-23 1982-04-27 Kennecott Corporation Sintered silicon carbide-titanium diboride mixtures and articles thereof

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