JPS6313330B2 - - Google Patents
Info
- Publication number
- JPS6313330B2 JPS6313330B2 JP10602986A JP10602986A JPS6313330B2 JP S6313330 B2 JPS6313330 B2 JP S6313330B2 JP 10602986 A JP10602986 A JP 10602986A JP 10602986 A JP10602986 A JP 10602986A JP S6313330 B2 JPS6313330 B2 JP S6313330B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- plating
- nickel
- insulating layer
- activator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 44
- 229910052759 nickel Inorganic materials 0.000 claims description 22
- 238000007747 plating Methods 0.000 claims description 16
- 239000012190 activator Substances 0.000 claims description 12
- 229910052573 porcelain Inorganic materials 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 10
- 229910052763 palladium Inorganic materials 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
- 238000007772 electroless plating Methods 0.000 description 7
- 230000000873 masking effect Effects 0.000 description 7
- 238000001994 activation Methods 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000003985 ceramic capacitor Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 241000080590 Niso Species 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 1
- 241001460678 Napo <wasp> Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- NQXGLOVMOABDLI-UHFFFAOYSA-N sodium oxido(oxo)phosphanium Chemical compound [Na+].[O-][PH+]=O NQXGLOVMOABDLI-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 235000011150 stannous chloride Nutrition 0.000 description 1
- 239000001119 stannous chloride Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Chemically Coating (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【発明の詳細な説明】
本発明は磁器コンデンサ等の磁器素体に無電解
メツキ法でニツケル層を形成する方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a nickel layer on a ceramic body such as a ceramic capacitor by electroless plating.
磁器コンデンサの電極を公知の銀焼付法で形成
すれば、電気的特性及び半田付性の優れた電極を
得ることが出来る反面、量産的に製作し難いこと
及び銀が高価であること等から、完成した磁器コ
ンデンサがコスト高になることが免れない。この
欠点を解決するために、無電解メツキでコンデン
サ電極を形成する方法が提案されている。しか
し、密着性の良いニツケル層を形成することは困
難であつた。 If the electrodes of a ceramic capacitor are formed by the known silver baking method, electrodes with excellent electrical characteristics and solderability can be obtained, but on the other hand, it is difficult to mass produce and silver is expensive. It is inevitable that the cost of the completed ceramic capacitor will be high. In order to solve this drawback, a method has been proposed in which capacitor electrodes are formed by electroless plating. However, it has been difficult to form a nickel layer with good adhesion.
そこで、本発の目的は、磁器素体に対する密着
性が良いニツケル層を容易に形成することが出来
る方法を提供することにある。 Therefore, an object of the present invention is to provide a method that can easily form a nickel layer that has good adhesion to a ceramic body.
上記目的を達成するための本発明は、無電解ニ
ツケルメツキのための活性剤に浸漬して引き上げ
た磁器素体を、80〜600℃の温度で5〜60分間熱
処理した後に、無電解ニツケルメツキ処理を施す
ことを特徴とする磁器素体にニツケル層を形成す
る方法に係わるものである。 To achieve the above object, the present invention heat-treats a porcelain body that has been immersed in an activator for electroless nickel plating and pulled up at a temperature of 80 to 600°C for 5 to 60 minutes, and then performs electroless nickel plating treatment. The present invention relates to a method for forming a nickel layer on a porcelain body.
上記発明に従つて、活性剤に浸漬した磁器素体
を80〜600℃で熱処理した後に無電解ニツケルメ
ツキを施すと、ニツケル層の磁器素体に対する密
着性が良くなる。 According to the above invention, when electroless nickel plating is applied after heat treating the porcelain body immersed in the activator at 80 to 600°C, the adhesion of the nickel layer to the porcelain body improves.
以下、図面を参照して本発明の1実施例に付い
て述べる。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
まず、第1図Aに示す例えばチタン酸バリウム
系誘電体で形成された円盤状磁器素体1を用意す
る。 First, a disc-shaped ceramic body 1 made of, for example, a barium titanate dielectric material as shown in FIG. 1A is prepared.
次に、第1図Aに示す磁器素体1を中性洗剤、
有機溶剤、無機酸(硝酸、弗酸)等で洗浄し、素
体の汚れを落す。 Next, the porcelain body 1 shown in FIG. 1A is washed with a neutral detergent.
Clean with organic solvents, inorganic acids (nitric acid, hydrofluoric acid), etc. to remove dirt from the element body.
上記の洗浄工程が終了したら、塩化第1スズ
(SnCl2)を含むセンシタイザ(増感剤)にて室
温で3〜5分間処理する。 After the above washing step is completed, the sample is treated with a sensitizer containing stannous chloride (SnCl 2 ) at room temperature for 3 to 5 minutes.
次に、水にて、しかる後、塩化パラジウム
(PdCl2)を1の水溶液中に0.07〜0.4グラムの
割合で含むアクチベータ(活性剤)にて40〜60
℃、3〜5分間の活性化処理を行う。次に、水に
て洗浄し、しかる後80〜600℃の温度で5〜60分
間熱処理を施す。これにより、磁器素体1が乾燥
すると共に磁器素体1にパラジウム膜が密着す
る。 Next, with water, and then with an activator (activator) containing palladium chloride (PdCl 2 ) at a ratio of 0.07 to 0.4 grams in an aqueous solution of 40 to 60%.
Activation treatment is performed for 3 to 5 minutes at ℃. Next, it is washed with water and then heat treated at a temperature of 80 to 600°C for 5 to 60 minutes. As a result, the porcelain element 1 dries and the palladium film adheres to the porcelain element 1.
次に、第1図Bに示す如く磁器素体1の非電極
形成領域となる外周面2に耐湿性が良好であると
共に密着強度の大きい例えばエポキシ樹脂のよう
に熱硬化性樹脂又は光硬化性樹脂等の絶縁層3を
設ける。この絶縁層3は耐湿性、電気絶縁性及び
耐薬品性があればどのような物質で形成してもよ
い。 Next, as shown in FIG. 1B, the outer circumferential surface 2 of the porcelain body 1, which is the non-electrode forming area, is made of a thermosetting resin, such as an epoxy resin, or a photocurable resin, which has good moisture resistance and high adhesion strength. An insulating layer 3 made of resin or the like is provided. This insulating layer 3 may be formed of any material as long as it has moisture resistance, electrical insulation, and chemical resistance.
次に、次亜リン酸ソーダ(NaH2PO2)と硫酸
ニツケル(NiSO4)とを含む無電解メツキ液に磁
器素体1を浸漬させ、2μm以上の膜厚のニツケル
層4を第1図Cに示す如く形成する。この無電解
メツキは次式のような化学変化でなされる。 Next, the porcelain body 1 is immersed in an electroless plating solution containing sodium hypophosphite (NaH 2 PO 2 ) and nickel sulfate (NiSO 4 ), and a nickel layer 4 with a thickness of 2 μm or more is formed as shown in FIG. Form as shown in C. This electroless plating is performed by a chemical change as shown in the following formula.
NaH2PO2+H2O→NaH2PO3+H2
NaH2PO3+NiSO4→Ni+H2SO4+NaPO3
尚このとき活性化処理工程で被着されているパ
ラジウムは触媒として作用し、還元作用によりニ
ツケルメツキを生成する。 NaH 2 PO 2 +H 2 O→NaH 2 PO 3 +H 2 NaH 2 PO 3 +NiSO 4 →Ni+H 2 SO 4 + NaPO Generates Nickelmecki.
第1図Cに示すニツケル層4が形成されたなら
ば、熱処理を施すためにメツキされた磁器素体1
を炉に入れて、200〜400℃の温度で5〜60分間の
熱処理を施す。この熱処理は大気中又は中性雰囲
気(アルゴン又は炭酸ガス)中で行う。 Once the nickel layer 4 shown in FIG. 1C has been formed, the porcelain element 1 is plated for heat treatment.
is placed in a furnace and subjected to heat treatment at a temperature of 200 to 400°C for 5 to 60 minutes. This heat treatment is performed in the air or in a neutral atmosphere (argon or carbon dioxide gas).
次に、電気メツキ又は無電解メツキ法にて第1
図Dに示す如くニツケル層4上に半田メツキ層5
を形成し、第1のコンデンサ電極6及び第2のコ
ンデンサ電極7とする。しかる後電極6,7に端
子部材(図示せず)を半田等で結合し、素子を完
成させる。 Next, the first layer is plated using electroplating or electroless plating.
As shown in Figure D, a solder plating layer 5 is formed on the nickel layer 4.
are formed to form the first capacitor electrode 6 and the second capacitor electrode 7. Thereafter, terminal members (not shown) are connected to the electrodes 6 and 7 by soldering or the like to complete the device.
上記方法によつて磁器コンデンサを製作すれ
ば、増感剤及び活性剤等によるメツキの活性化処
理をした後に、マスキング用絶縁層3を設けるの
で、マスキング用絶縁層3の表面が増感剤及び活
性剤にて活性化されることなく、マスキング用絶
縁層3を有して無電解ニツケルメツキ液に素体1
を浸漬してもマスキング用絶縁層3の表面にニツ
ケルが殆んど付着せず、マスキング用絶縁層3を
防湿用及び半田流れ防止用等としてそのまま使用
することが可能になる。 When a ceramic capacitor is manufactured by the above method, the masking insulating layer 3 is provided after the plating is activated with a sensitizer and an activator, so that the surface of the masking insulating layer 3 is covered with the sensitizer and activator. The element body 1 is placed in an electroless nickel plating solution with a masking insulating layer 3 without being activated by an activator.
Even if the masking insulating layer 3 is dipped, hardly any nickel will adhere to the surface of the masking insulating layer 3, and the masking insulating layer 3 can be used as it is for moisture proofing, solder flow prevention, etc.
また本実施例では、活性剤による処理をした後
に、80〜600℃の熱処理を施してパラジウムの磁
器素体1に対する密着強度を上げているので、マ
スキング用絶縁層3によつてパラジウム膜が影響
を受けないばかりでなく、ニツケル層4の素体1
への密着力が大きくなる。 In addition, in this example, after treatment with an activator, heat treatment is performed at 80 to 600°C to increase the adhesion strength of palladium to the porcelain body 1, so the palladium film is affected by the masking insulating layer 3. Not only is it not affected by nickel layer 4, but it is also
The adhesion force to will be increased.
なお、活性剤処理直後の熱処理温度が80℃より
も低い場合には、磁器素体1に対するパラジウム
(活性剤)の密着強度も低くなる。上記熱処理温
度を80℃以上にすると、パラジウムの密着強度が
高くなり、熱処理温度を高めるにつれてパラジウ
ムの密着強度も向上する。しかし、密着強度の向
上は約500℃で飽和状態になる。一方、活性剤
(パラジウム)の触媒活性は、上記の熱処理温度
が400℃を越えると徐々に低下し、600℃を越える
と急激に低下する。このため、600℃を越える温
度で熱処理した場合には、還元作用によつて析出
されるニツケル膜がまばらになる。従つて、上記
の熱処理温度を80〜600℃の範囲にすることが望
ましい。 Note that if the heat treatment temperature immediately after the activator treatment is lower than 80° C., the adhesion strength of palladium (activator) to the ceramic body 1 will also be low. When the heat treatment temperature is set to 80° C. or higher, the adhesion strength of palladium increases, and as the heat treatment temperature increases, the adhesion strength of palladium also improves. However, the improvement in adhesion strength reaches a saturation point at about 500°C. On the other hand, the catalytic activity of the activator (palladium) gradually decreases when the heat treatment temperature exceeds 400°C, and rapidly decreases when the temperature exceeds 600°C. For this reason, when heat treatment is performed at a temperature exceeding 600°C, the nickel film deposited by the reduction action becomes sparse. Therefore, it is desirable that the above heat treatment temperature be in the range of 80 to 600°C.
以上本発明の1実施例に付いが述べたが、本発
明は上述の実施例に限定されるものではなく、更
に変形可能なものである。例えば、第2図に示す
如く円筒状磁器素体1に対してメツキの活性化処
理を施し、非電極形成面2aに絶縁層3を設け、
しかる後無電解メツキによるニツケル層4及び半
田メツキ層5を形成し、内側の第1のコンデンサ
電極6と外側の第2のコンデンサ電極7とするも
のにも適用可能である。 Although one embodiment of the present invention has been described above, the present invention is not limited to the above-described embodiment and can be further modified. For example, as shown in FIG. 2, the cylindrical ceramic body 1 is subjected to plating activation treatment, and the insulating layer 3 is provided on the non-electrode forming surface 2a.
It is also applicable to a structure in which a nickel layer 4 and a solder plating layer 5 are then formed by electroless plating to form the first capacitor electrode 6 on the inside and the second capacitor electrode 7 on the outside.
また半田メツキ層5の代わりに半田付性の良い
銀層等を設けてもよい。また無電解メツキ法によ
るニツケル層4の上に電気メツキ法で更にニツケ
ル層を設け、その上に半田又は銀等の半田付性の
良い金属層を設けてもよい。 Further, instead of the solder plating layer 5, a silver layer or the like having good solderability may be provided. Further, a nickel layer may be further provided by electroplating on the nickel layer 4 formed by electroless plating, and a metal layer having good solderability such as solder or silver may be provided thereon.
またメツキ用の活性化処理で形成されるパラジ
ウム膜が絶縁層3と素体1との間に残存すること
が好ましくない場合には、メツキ用の活性化処理
後に、素体1の外周面2又は非電極形成面2aを
少し研摩してから絶縁層3を設けるか、メツキ用
の活性化処理前に剥離容易な膜を外周面2又は非
電極形成面2aに設け、メツキ用の活性化処理後
にこの膜を剥離し、しかる後、最後まで残す耐湿
性の絶縁層3を設けてもよい。 In addition, if it is undesirable that the palladium film formed in the activation process for plating remains between the insulating layer 3 and the element body 1, the palladium film formed on the outer circumferential surface of the element body 1 after the activation process for plating is Alternatively, the insulating layer 3 is provided after the non-electrode forming surface 2a is slightly polished, or an easily peelable film is provided on the outer peripheral surface 2 or the non-electrode forming surface 2a before the activation treatment for plating, and the activation treatment for plating is performed. This film may be peeled off later, and then a moisture-resistant insulating layer 3 that remains until the end may be provided.
第1図は本発明の1実施例に係わる磁器コンデ
ンサを工程順に示す断面図、第2図は変形例を示
す断面図である。
尚図面に用いられている符号に於いて、1は磁
器素体、2は外周面、3は絶縁層、4はニツケル
層、5は半田メツキ層、6は第1のコンデンサ電
極、7は第2のコンデンサ電極である。
FIG. 1 is a sectional view showing a ceramic capacitor according to an embodiment of the present invention in the order of steps, and FIG. 2 is a sectional view showing a modified example. In the symbols used in the drawings, 1 is the ceramic body, 2 is the outer peripheral surface, 3 is the insulating layer, 4 is the nickel layer, 5 is the solder plating layer, 6 is the first capacitor electrode, and 7 is the first capacitor electrode. This is the second capacitor electrode.
Claims (1)
して引き上げた磁器素体を、80〜600℃の温度で
5〜60分間熱処理した後に、無電解ニツケルメツ
キ処理を施すことを特徴とする磁器素体にニツケ
ル層を形成する方法。1. A porcelain element which is immersed in an activator for electroless nickel plating and pulled up, heat-treated at a temperature of 80 to 600°C for 5 to 60 minutes, and then subjected to electroless nickel plating treatment. How to form a nickel layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10602986A JPS61263112A (en) | 1986-05-09 | 1986-05-09 | Formation of nickel layer on ceramic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10602986A JPS61263112A (en) | 1986-05-09 | 1986-05-09 | Formation of nickel layer on ceramic element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61263112A JPS61263112A (en) | 1986-11-21 |
| JPS6313330B2 true JPS6313330B2 (en) | 1988-03-25 |
Family
ID=14423211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10602986A Granted JPS61263112A (en) | 1986-05-09 | 1986-05-09 | Formation of nickel layer on ceramic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61263112A (en) |
-
1986
- 1986-05-09 JP JP10602986A patent/JPS61263112A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61263112A (en) | 1986-11-21 |
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