JPS634933B2 - - Google Patents
Info
- Publication number
- JPS634933B2 JPS634933B2 JP57123910A JP12391082A JPS634933B2 JP S634933 B2 JPS634933 B2 JP S634933B2 JP 57123910 A JP57123910 A JP 57123910A JP 12391082 A JP12391082 A JP 12391082A JP S634933 B2 JPS634933 B2 JP S634933B2
- Authority
- JP
- Japan
- Prior art keywords
- mark
- signal
- value
- detected
- detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Description
【発明の詳細な説明】
本発明は正確なマーク検出を可能にしたマーク
検出装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a mark detection device that enables accurate mark detection.
電子ビーム露光装置等の荷電粒子ビーム装置に
おいては、パターンが描画される被描画材料又は
該被描画材料を載置する為のステージ材料や該被
描画材料の周辺部に配置される周辺材料等に1個
若しくは複数のマークを設け、該材料上を荷電粒
子ビームで走査し、マークから発生した荷電粒子
ビーム信号に基づいてマークの位置を検出し、該
マーク位置に応じて予定された描画すべき位置を
補正し、材料上の所定の位置にパターンの描画を
行なつている。 In a charged particle beam device such as an electron beam exposure device, a material to be drawn on which a pattern is drawn, a stage material for placing the material to be drawn, a peripheral material placed around the material to be drawn, etc. One or more marks are provided, the material is scanned with a charged particle beam, the position of the mark is detected based on the charged particle beam signal generated from the mark, and a scheduled drawing is performed according to the mark position. The position is corrected and the pattern is drawn at a predetermined position on the material.
さて、この様なマーク検出において次の様な問
題がある。それは、マーク検出の為の荷電粒子ビ
ーム走査領域内にごみがあると、該ごみをマーク
と誤つて検出してしまうことである。従来、この
様な誤検出を防ぐため、次の様な方法が取られて
いた。第1図aに示す様にビームでマークM上を
走査する際、或る位置Pからピーク信号(マーク
又はゴミのエツヂ部から発生する信号)が発生す
る迄の距離A,B(第1図b参照)を求め、更に
B―Aを演算し、この値が許容値内にあるか否か
により、マーク検出をしたかゴミを検出したかを
判断していた。即ち、通常マークの幅は10μm程
度に作成されているので許容値を10μmとし、一
方通常ゴミの幅は大略10μmより大きいことに着
目し、検出されたB―Aを許容値と比較し、許容
値より大きければゴミ、小さければマークを夫々
検出したと判断する。しかし、ここに大きな問題
が生じた。それは、偶然マーク検出の為の荷電粒
子ビーム走査領域内に10μmのゴミがあると、該
ゴミを検出したにも拘わらず、マーク検出したか
の如く判断されてしまう。しかも、通常B―Aの
値を算出する迄に、1回の走査ではビームの変動
による誤差が大きい為、20〜30回の走査を行なつ
てB―Aの平均値を求めている。従つて、前記正
しい検出が誤検出かを判断する迄に相当の時間
(例、80〜120m sec)がかかつてしまつた。以上
のことから、描画精度の向上及び描画全体に要す
る時間の短縮化に支障をきたしていた。 Now, there are the following problems in such mark detection. The problem is that if there is dust within the charged particle beam scanning area for mark detection, the dust will be mistakenly detected as a mark. Conventionally, the following methods have been used to prevent such false detections. When scanning a mark M with a beam as shown in Fig. 1a, the distances A and B from a certain position P until a peak signal (a signal generated from the edge of the mark or dust) is generated (Fig. b) is calculated, and then B-A is calculated, and it is determined whether a mark or dust has been detected depending on whether this value is within an allowable value. In other words, since the width of a normal mark is approximately 10 μm, the allowable value is set to 10 μm.On the other hand, focusing on the fact that the width of normal dust is approximately larger than 10 μm, the detected B-A is compared with the allowable value, and the allowable value is determined. If the value is larger than the value, it is determined that dust has been detected, and if it is smaller than the value, it is determined that a mark has been detected. However, a big problem arose here. If by chance there is dust of 10 μm in the charged particle beam scanning area for mark detection, it will be determined that the mark has been detected even though the dust has been detected. Moreover, since one scan usually involves a large error due to beam fluctuations, 20 to 30 scans are performed to calculate the average value of BA. Therefore, it took a considerable amount of time (eg, 80 to 120 msec) to determine whether the correct detection was a false detection. As a result of the above, it has been difficult to improve the drawing accuracy and shorten the time required for the entire drawing.
本発明はこの様な点に鑑みてなされたもので、
通常凹凸状マークの高さは1μm程度であり、ゴミ
の高さ(径)は大略10μmより大きく、即ち、材
料面に対するマークの高さ方向の変化に対して、
ゴミの高さ方向の変化が著しく大きいこと、ビー
ム走査で該ゴミから検出される反射電子の量が著
しく多いこと及び該反射電子による信号量が高さ
方向の変化に大略対応していることに着目し、ビ
ームでマーク上を走査する際、検出される信号の
振幅値を測定し、該振幅値が基準値より大きいか
小さいかにより該検出が正しい検出か誤つた検出
かを判別するようになした新規なマーク検出装置
を提供するものである。 The present invention was made in view of these points,
Normally, the height of the uneven mark is about 1 μm, and the height (diameter) of the dust is about 10 μm or more.
The change in the height direction of the dust is extremely large, the amount of backscattered electrons detected from the dust during beam scanning is extremely large, and the amount of signal due to the backscattered electrons roughly corresponds to the change in the height direction. When scanning a mark with a beam, the amplitude value of the detected signal is measured, and whether the detection is correct or incorrect is determined based on whether the amplitude value is larger or smaller than a reference value. The present invention provides a novel mark detection device.
第2図は本発明の一実施例を示したマーク検出
装置の概略を示すものである。 FIG. 2 schematically shows a mark detection device according to an embodiment of the present invention.
図中1は電子銃で、該電子銃から射出された電
子ビーム2は偏向器3により、例えば凸状のマー
ク5(第3図参照)の設けられた材料4上を走査
する。6は該材料から発生する反射電子を検出す
る反射電子検出器、7はアンプ、8は波形整形回
路である。9は該波形整形回路の出力信号のピー
クツーピーク値を測定する振幅検出回路である。
10はあらかじめマークから得られる信号のピー
クツーピーク値より僅かに大きい値を基準値とし
てセツトしておき、前記振幅検出回路9の出力信
号値をこの基準値と比較し、該基準値より小さい
場合、マーク検出が行なわれたことを示す信号
(例“1”)を制御装置11へ送り、大きい場合、
ゴミ検出が行なわれたことを示す信号(例“0”)
を制御装置11へ送る判別回路である。12は前
記制御装置11の指令により、走査中のビームの
或る位置(例、走査開始位置)からクロツクパル
ス発生器13からのクロツクパルスを計数し始
め、ピークが発生する迄計数するカウンタであ
る。実際には該カウンタは2つのカウンタからな
り、1つはクロツクパルスの計数開始から初めて
のピークが発生する迄のクロツクパルス数を計数
するもので、もう1つはクロツクパルス数開始か
ら2つめのピークが発生する迄のクロツクパルス
数を計数するもので、各々計数したものを前記制
御装置11へ送る。該制御装置は前記判別回路1
0から“1”信号が入つて来た時、前記カウンタ
12からの計数値からマーク中心位置を演算する
と共に、該カウンタをリセツトさせ、“0”信号
が入つて来た時、前記カウンタ12からの計数値
を無視すると共に該カウンタをリセツトさせ更
に、前記偏向器3にアンプ14を介して走査信号
を送つている走査信号発生器15に、走査開始点
を例えばY方向に少しずらし、そこから例えばX
方向にビームを走査させるような指令を送る。 In the figure, reference numeral 1 denotes an electron gun, and an electron beam 2 emitted from the electron gun is scanned by a deflector 3 over a material 4 provided with, for example, a convex mark 5 (see FIG. 3). 6 is a backscattered electron detector that detects backscattered electrons generated from the material, 7 is an amplifier, and 8 is a waveform shaping circuit. 9 is an amplitude detection circuit that measures the peak-to-peak value of the output signal of the waveform shaping circuit.
10 sets in advance a value slightly larger than the peak-to-peak value of the signal obtained from the mark as a reference value, compares the output signal value of the amplitude detection circuit 9 with this reference value, and determines if it is smaller than the reference value. , sends a signal (e.g. "1") indicating that mark detection has been performed to the control device 11, and if the signal is large,
Signal indicating that dust detection has been performed (e.g. “0”)
This is a discrimination circuit that sends the information to the control device 11. Reference numeral 12 denotes a counter that starts counting clock pulses from the clock pulse generator 13 from a certain position of the beam being scanned (eg, the scanning start position) according to a command from the control device 11, and continues counting until a peak occurs. In reality, this counter consists of two counters, one that counts the number of clock pulses from the start of clock pulse counting until the first peak occurs, and the other that counts the number of clock pulses from the start of clock pulse counting until the second peak occurs. The number of clock pulses until the clock pulse is counted is sent to the control device 11. The control device includes the discrimination circuit 1
When a "1" signal is input from 0, the mark center position is calculated from the count value from the counter 12, and the counter is reset. When a "0" signal is input, the mark center position is calculated from the count value from the counter 12. The counter is ignored, the counter is reset, and the scanning signal generator 15, which sends a scanning signal to the deflector 3 via the amplifier 14, shifts the scanning start point a little, for example, in the Y direction, and from there. For example,
Sends a command to scan the beam in a direction.
斯くの如き装置において、マーク検出の為に試
料上をビームで走査した時、第4図aに示す如き
信号が振幅検出回路9に入つた時、(第3図に示
す如きゴミ16上をビームが走査した時)該検出
回路はこの信号のピークツーピークの値D1を検
出してこれを判別回路10へ送る。該判別回路は
このピークツーピーク値D1と基準値D0(第4図参
照)を比較し、D1>D0からビームがゴミを検出
したことを表わす“0”信号を制御装置11へ送
る。該制御装置はカウンタ12からの出力を無視
し該カウンタをリセツトさせると共に、ビームの
走査開始点を変えるよう走査信号発生器15へ指
令を送る。又、第4図bに示す如き信号が振幅検
出回路9に入つた時(第3図に示す如きマーク5
上をビームが走査した時)、該検出回路はこの信
号のピークツーピーク値D2を検出してこれを判
別回路10へ送る。該判別回路はこのピークツー
ピーク値D2と基準値D0を比較し、D2<D0からビ
ームがマークを検出したことを表わす“1”信号
を制御装置11へ送る。該制御装置はカウンタ1
2からの出力、即ち、走査開始点からピークP1
が検出される迄のクロツクパルス数E1と、走査
開始点P2が検出される迄のクロツクパルス数E2
の差の絶対値|E1―E2|の1/2を演算してマーク
位置を測定する。 In such an apparatus, when the sample is scanned with a beam for mark detection, when a signal as shown in FIG. 4a enters the amplitude detection circuit 9, (when the signal is scanned), the detection circuit detects the peak-to-peak value D1 of this signal and sends it to the discrimination circuit 10. The discrimination circuit compares this peak-to-peak value D 1 with a reference value D 0 (see FIG. 4), and if D 1 >D 0 , sends a “0” signal to the control device 11 indicating that the beam has detected dust. send. The controller ignores the output from the counter 12, resets the counter, and sends a command to the scanning signal generator 15 to change the beam scanning start point. Also, when a signal as shown in FIG. 4b enters the amplitude detection circuit 9 (mark 5 as shown in FIG.
2), the detection circuit detects the peak-to-peak value D 2 of this signal and sends it to the discriminator circuit 10. The discrimination circuit compares this peak-to-peak value D 2 with the reference value D 0 and sends a “1” signal to the control device 11 when D 2 <D 0 , indicating that the beam has detected a mark. The control device is counter 1
2, i.e. from the scanning start point to the peak P 1
The number of clock pulses E 1 until the scan start point P 2 is detected, and the number E 2 of clock pulses until the scan start point P 2 is detected.
The mark position is measured by calculating 1/2 of the absolute value of the difference |E 1 −E 2 |.
尚、判別回路10からゴミ検出信号が出力され
た時、表示装置にゴミを検出したことを表示させ
るようにしてもよい。更に、該表示に従つて手動
にて走査信号発生器やカウンタを操作してもよ
い。又、ゴミを検出してもカウンタを止めないで
そのままマークも検出し、判別回路からの判別信
号によりマークを検出した時のカウンタ値を求め
て、マーク位置を検出するようにしてもよい。 Incidentally, when the dust detection signal is output from the discrimination circuit 10, the fact that dust has been detected may be displayed on the display device. Furthermore, the scanning signal generator and counter may be operated manually according to the display. Alternatively, even if dust is detected, the counter may not be stopped and the mark may be detected as it is, and the mark position may be detected by obtaining the counter value when the mark is detected based on the discrimination signal from the discrimination circuit.
本発明によれば、マーク検出において、正しく
マークが検出されたのか、誤つてゴミが検出され
たのかが精確に判別され、しかも、マークとゴミ
とではその検出信号の振幅値に著しい差がある
為、この判別の為に何度もマーク走査を行なうこ
とはないので、マーク検出に要する時間が大幅に
短縮化される。以上のことから、描画精度の向上
及び描画全体に要する時間の短縮化がなされた。 According to the present invention, in mark detection, it is accurately determined whether a mark is detected correctly or dust is detected by mistake, and there is a significant difference in the amplitude value of the detection signal between the mark and dust. Therefore, mark scanning is not performed many times for this discrimination, so the time required for mark detection is significantly shortened. From the above, the drawing accuracy has been improved and the time required for the entire drawing has been shortened.
第1図は従来のマーク検出を示したもの、第2
図は本発明の一実施例を示したマーク検出装置、
第3図及び第4図は該装置の動作の説明を補足す
る為のものである。
2…電子ビーム、3…偏向器、4…試料、5…
マーク、6…反射電子検出器、9…振幅検出回
路、10…判別回路、11…制御装置、15…走
査信号発生器。
Figure 1 shows conventional mark detection;
The figure shows a mark detection device showing an embodiment of the present invention.
3 and 4 are provided to supplement the explanation of the operation of the device. 2... Electron beam, 3... Deflector, 4... Sample, 5...
Mark, 6... Backscattered electron detector, 9... Amplitude detection circuit, 10... Discrimination circuit, 11... Control device, 15... Scanning signal generator.
Claims (1)
で走査させる手段、該材料上から発生した荷電粒
子ビームを検出するビーム検出手段、該検出した
ビーム信号の振幅値を測定する振幅検出手段、該
測定振幅値を予めセツトした基準振幅値と比較
し、該測定振幅値が該基準振幅値より小さい場合
と大きい場合とを判別した信号を発生する判別回
路、及び、該判別回路が前者の場合を判別した信
号を発生した時に前記ビーム検出手段からのビー
ム信号に基づいてマーク位置を測定し、後者の場
合を判別した信号を発生した時に前記ビーム検出
手段からのビーム信号をマーク位置測定に対し無
視する制御手段から成るマーク検出装置。1. Means for scanning a charged particle beam on a material provided with a mark, beam detection means for detecting the charged particle beam generated from the material, amplitude detection means for measuring the amplitude value of the detected beam signal, and said measurement. A discrimination circuit that compares the amplitude value with a preset reference amplitude value and generates a signal that discriminates whether the measured amplitude value is smaller or larger than the reference amplitude value, and the discrimination circuit discriminates the former case. The mark position is measured based on the beam signal from the beam detecting means when the latter signal is generated, and the beam signal from the beam detecting means is ignored for mark position measurement when the latter signal is generated. A mark detection device comprising control means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57123910A JPS5914636A (en) | 1982-07-16 | 1982-07-16 | Mark detection apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57123910A JPS5914636A (en) | 1982-07-16 | 1982-07-16 | Mark detection apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5914636A JPS5914636A (en) | 1984-01-25 |
| JPS634933B2 true JPS634933B2 (en) | 1988-02-01 |
Family
ID=14872365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57123910A Granted JPS5914636A (en) | 1982-07-16 | 1982-07-16 | Mark detection apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5914636A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116007558B (en) * | 2022-12-30 | 2025-08-26 | 深圳市磐锋精密技术有限公司 | Internal dust detection and processing method and device of electronic products and computer equipment |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5127917A (en) * | 1974-09-02 | 1976-03-09 | Matsushita Electric Industrial Co Ltd | Supiika |
| JPS5615040A (en) * | 1979-07-17 | 1981-02-13 | Nippon Telegr & Teleph Corp <Ntt> | Mark detector |
| JPS5690204A (en) * | 1979-12-24 | 1981-07-22 | Fujitsu Ltd | Pattern check device |
| JPS56149687A (en) * | 1980-04-22 | 1981-11-19 | Tokyo Shibaura Electric Co | Printed end detector |
-
1982
- 1982-07-16 JP JP57123910A patent/JPS5914636A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5914636A (en) | 1984-01-25 |
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