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JPS6350309B2 - - Google Patents
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JPS6350309B2 - - Google Patents

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Publication number
JPS6350309B2
JPS6350309B2 JP60268107A JP26810785A JPS6350309B2 JP S6350309 B2 JPS6350309 B2 JP S6350309B2 JP 60268107 A JP60268107 A JP 60268107A JP 26810785 A JP26810785 A JP 26810785A JP S6350309 B2 JPS6350309 B2 JP S6350309B2
Authority
JP
Japan
Prior art keywords
composition
dielectric
tan
dielectric constant
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60268107A
Other languages
Japanese (ja)
Other versions
JPS61141669A (en
Inventor
Takeshi Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP60268107A priority Critical patent/JPS61141669A/en
Publication of JPS61141669A publication Critical patent/JPS61141669A/en
Publication of JPS6350309B2 publication Critical patent/JPS6350309B2/ja
Granted legal-status Critical Current

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Description

【発明の詳細な説明】[Detailed description of the invention]

本発明はマイクロ波用として好適な誘電体磁器
組成物に関する。 近年、マイクロ波集積回路(MICと略記され
る)技術の発展に伴ない、誘電体基板、誘電体共
振器、チツプコンデンサ等に誘電体材料の新しい
応用分野が広げられつつある。しかしこれらの分
野においては、既存の誘電体材料では、必要とさ
れる特性を必ずしも満足し得ておらず、必要な特
性を満たし得る新しいマイクロ波用誘電体材料の
研究が積極的に進められているのが現状である。
特にマイクロ波用誘電体共振器に使用される誘電
体材料は、従来この種の応用例が少なかつたこと
と、特性に要求される条件がきびしく、容易には
その特性を満たし得ないこともあつて、盛んに研
究が進められている。 誘電体共振器用の材料に必要な条件としては、
(1)比誘電率が30〜40の範囲にあること、(2)ストリ
ツプラインやFET等の温度係数を補償する上で、
比誘電率を大きく変化させることなく誘電率の温
度係数を10-6/℃のオーダーで自由に制御できる
こと、(3)誘電損失ができるだけ小さいこと(測定
周波数10〜12GHzのときに複素誘電率の損失係数
tanδ<5×10-4:即ちQ>2000であること)等が
挙げられる。これら個々の特性値を独立に制御し
得ることが理想ではあるが、その実現は困難であ
る。しかし、極力その条件に近づけることが望ま
れる。 従来、この種のマイクロ波用誘電体材料として
はチタネート系の磁器組成物が主として研究され
ているが、一般にチタネート系の組成物は組成変
化による比誘導電率の変化が大きく、組成による
誘電率の温度係数の制御を行なう際に、同時に比
誘電率が大きく変化してしまい、必要とする比誘
電率の値が得られなくなることがあり、この面か
ら制限を受ける欠点があつた。添加物の導入等に
よつて大分改善されてきたが、まだ十分な特性を
得るには至つていない。一例として、MgO―
CaO―TiO2―Nd2O3系の例を下記表―1に示す。
The present invention relates to a dielectric ceramic composition suitable for microwave use. In recent years, with the development of microwave integrated circuit (abbreviated as MIC) technology, new fields of application of dielectric materials are being expanded to include dielectric substrates, dielectric resonators, chip capacitors, etc. However, in these fields, existing dielectric materials do not necessarily satisfy the required properties, and research is actively progressing on new dielectric materials for microwaves that can meet the required properties. The current situation is that
In particular, the dielectric materials used in dielectric resonators for microwaves have had few examples of this type of application in the past, and the conditions required for their characteristics are severe, and the characteristics may not be easily met. Research is currently actively underway. The conditions necessary for materials for dielectric resonators are:
(1) The dielectric constant is in the range of 30 to 40, (2) In compensating for the temperature coefficient of stripline, FET, etc.
The temperature coefficient of the dielectric constant can be freely controlled on the order of 10 -6 /℃ without significantly changing the relative dielectric constant, and (3) the dielectric loss must be as small as possible (the temperature coefficient of the complex dielectric constant can be controlled at a measurement frequency of 10 to 12 GHz). loss factor
tan δ<5×10 −4 : that is, Q>2000). Although it would be ideal to be able to control these individual characteristic values independently, it is difficult to achieve this. However, it is desirable to get as close to that condition as possible. Conventionally, titanate-based porcelain compositions have been mainly studied as this type of dielectric material for microwaves, but titanate-based compositions generally have a large change in specific dielectric constant due to changes in composition; When controlling the temperature coefficient of , the relative dielectric constant may change greatly at the same time, making it impossible to obtain the required value of the relative permittivity, which has the drawback of being subject to limitations. Although it has been greatly improved by the introduction of additives, sufficient characteristics have not yet been achieved. As an example, MgO―
Examples of the CaO-TiO 2 -Nd 2 O 3 system are shown in Table 1 below.

【表】 なおこの場合、測定周波数は2〜4GHzである。
表―1によれば、組成変化による比誘電率の変化
が大きいことが分る。また比誘電率、誘電率の温
度係数はマイクロ波域で略一定と考えて良いが、
tanδは周波数の増大とともに増加する傾向を有
し、特に10〜12GHzでは上記値の約1.5〜2倍と
なることが確認されている。 このように、従来の組成物では、組成変化によ
り誘電率の温度係数を変化させる際に、同時に比
誘電率の値もかなり大きく変化してしまう。 本発明は、上述した問題点を克服する為になさ
れたものであつて、(CaxSryBaz)ZrO3で表わさ
れる組成(但、x+y+z=1)を有し、 0.88≦x<1 0<y≦0.1 0<z≦0.035 であり、1450℃以上の温度で焼成されたことを特
徴とするマイクロ波用誘電体磁器組成物に係るも
のである。このように構成した磁器組成物は、比
誘電率が略30〜35の範囲にあつてその変化が少な
く、またtanδ<5×10-4の条件を満たしており、
従つて誘電体共振器用材料として好適なものであ
る。 次に本発明による磁器組成物の組成を上記範囲
に限定した理由を説明する。 まずCaの含有量を0.88≦x<1としたのは、
Caが0.88未満ではtanδが増加しすぎて誘電体共振
器用材料として適当でなくなるからである。ま
た、Sr及びBaの製成範囲を夫々0<y≦0.1、0
<z≦0.035としたのは、Ba及びSrのいずれか又
は両方を含まない場合には、粒子(グレイン)の
成長が激しくなつたりそのサイズが定在波に比べ
て大きくなりすぎ、使用時にクラツクが入る恐れ
があり、その上焼結性が低下したりするからであ
る。一方、Srの含有量が0.1を越えると、焼結性
が低下するとともにtanδが5×10-4より大とな
り、またBaの含有量が0.035を越えると、比誘電
率の変化が大となり且つtanδも5×10-4より大と
なり、さらに誘電率の温度係数が負で大となりす
ぎるからであり、いずれの場合も誘電体共振器用
材料としては好ましくない。また、焼成温度を
1450℃以上とするのは、焼成温度が1450℃未満と
低くなるに伴なつてtanδ′が増加するからである。 次に、本発明を実施例につき更に詳しく説明す
る。 この実施例における各試料は次のようにして作
成した。まず、純度99.99%以上のCaCO3
SrCO3、BaCO3、ZrO2の各原料粉末を用意する。
次にこれら各粉末を夫々所望の組成となるように
秤量し、ボールミルで湿式混合処理をし後に乾燥
し、約1000Kg/cm2の圧力で加圧成型し、1100〜
1200℃で約1時間空気中で〓焼する。これを乳鉢
等で粉砕し、再びボールミルで湿式混合処理し、
乾燥した後、1000〜1500Kg/cm2の圧力で加圧成型
し、1500℃で約2時間空気中で焼成する。 こうして得られた磁器組成物を加工して円柱状
誘電体共振器となし、導波管と組み合わせて透過
共振法により特性を測定し、その値と共振器の形
状とから試料の比誘電率、tanδを夫々算出した。
また、測定系の温度を変え、その時の共振周波数
の変化と材料の線膨脹係数とから誘電率の温度変
化を求めた。測定周波数は10〜11GHz、温度変化
範囲は20〜60℃であつた。結果は下記表―2に示
した。
[Table] In this case, the measurement frequency is 2 to 4 GHz.
According to Table 1, it can be seen that the change in relative dielectric constant due to composition change is large. In addition, the relative permittivity and the temperature coefficient of permittivity can be considered to be approximately constant in the microwave range, but
It has been confirmed that tan δ tends to increase as the frequency increases, and is approximately 1.5 to 2 times the above value especially at 10 to 12 GHz. As described above, in conventional compositions, when the temperature coefficient of dielectric constant is changed by changing the composition, the value of relative dielectric constant also changes considerably at the same time. The present invention has been made to overcome the above-mentioned problems, and has a composition represented by (CaxSryBaz)ZrO 3 (x+y+z=1), 0.88≦x<1 0<y≦0.1 The present invention relates to a dielectric ceramic composition for microwave use, which satisfies 0<z≦0.035 and is fired at a temperature of 1450° C. or higher. The porcelain composition constructed in this way has a relative dielectric constant in the range of approximately 30 to 35 with little change, and also satisfies the condition of tan δ < 5 × 10 -4 ,
Therefore, it is suitable as a material for dielectric resonators. Next, the reason why the composition of the ceramic composition according to the present invention is limited to the above range will be explained. First, the reason for setting the Ca content to 0.88≦x<1 is that
This is because if Ca is less than 0.88, tan δ increases too much and the material is not suitable as a dielectric resonator material. In addition, the production range of Sr and Ba is 0<y≦0.1, 0
The reason for setting <z≦0.035 is that if one or both of Ba and Sr is not included, the growth of particles (grains) will be rapid and the size of the grains will be too large compared to the standing wave, resulting in cracks during use. This is because there is a risk that the sintering property may be deteriorated. On the other hand, when the Sr content exceeds 0.1, the sinterability decreases and tan δ becomes larger than 5×10 -4 , and when the Ba content exceeds 0.035, the relative dielectric constant changes greatly and This is because the tan δ is also larger than 5×10 −4 and the temperature coefficient of the dielectric constant is negative and too large. In either case, it is not preferable as a material for a dielectric resonator. Also, the firing temperature
The reason why the temperature is set at 1450°C or higher is that as the firing temperature becomes lower than 1450°C, tan δ' increases. Next, the present invention will be explained in more detail with reference to examples. Each sample in this example was prepared as follows. First, CaCO 3 with a purity of 99.99% or more,
Each raw material powder of SrCO 3 , BaCO 3 , and ZrO 2 is prepared.
Next, each of these powders was weighed to have the desired composition, wet-mixed in a ball mill, dried, and pressure-molded at a pressure of about 1000 kg/ cm2 .
Bake in air at 1200℃ for about 1 hour. This is ground in a mortar, etc., wet-mixed again in a ball mill,
After drying, it is pressure molded at a pressure of 1000 to 1500 kg/cm 2 and fired in air at 1500°C for about 2 hours. The ceramic composition obtained in this way was processed to form a cylindrical dielectric resonator, and its characteristics were measured by the transmission resonance method in combination with a waveguide. From the values and the shape of the resonator, the relative dielectric constant of the sample was determined. tanδ was calculated respectively.
In addition, the temperature of the measurement system was changed, and the temperature change in the dielectric constant was determined from the change in the resonance frequency and the linear expansion coefficient of the material. The measurement frequency was 10 to 11 GHz, and the temperature change range was 20 to 60°C. The results are shown in Table 2 below.

【表】 表―2から分るように、試料No.1〜3のもの
は、x,y,zともに上述した範囲を満足し、且
つ焼成温度も1500℃と高いために、誘電体共振器
用材料としての条件を充分に満足している。すな
わち、比誘電率は略30〜35の範囲にあつてその変
化は少なく、またtanδも5×10-4より小さい。こ
れに対して、試料No.4〜9のものは、x,y,z
のいずれかが上述した範囲外であるから、誘電体
共振器用材料として不適当であることが分る。 試料No.4〜9についてさらに詳細に述べると、
試料No.4〜9は、Baの含有量が本発明の範囲外
であり、試料No.5〜9ではさらにCaの組成も範
囲外である。これらの例では、比誘電率の変化が
比較的大きく、tanδも5×10-4より大となつてし
まう。試料No.7及び8はBaとSrのいずれかを含
まない例であるが、どちらも焼結性が悪く、測定
不可能であつた。また、他の実験からtanδは焼成
温度にも左右されることが分り、一般に焼成温度
の低下に伴ないtanδは増加する。そして誘電体共
振器用材料として好適な焼成温度は1450℃以上で
あることが確認された。 第1図〜第3図に、磁器組成物の組成と比誘電
率、誘電率の温度係数、tanδとの関係を夫々示し
た。太線及び破線で囲まれた領域が本発明による
組成範囲を表わしている。これらのグラフから明
らかなように、本発明による磁器組成物は、前述
した誘電体共振用材料に必要な条件を全て満足し
ているのに対し、本発明による組成範囲外の磁器
組成物では、誘電体共振器用材料としては適当で
ないこと、特にtanδが5×10-4よりかなり大とな
つてしまうことが分る。 なお、本発明による磁器材料は、マイクロ波誘
電体共振器用材料としてだけでなく、マイクロ波
用チツプコンデンサ等にそ勿論応用可能である。 以上に説明したように、本発明によれば、tanδ
<5×10-4の条件を満たした上で、組成を変化さ
せて、誘電率の温度係数を変化させた時の比誘電
率の変化が従来例より著しく小さくなるので、従
来技術の問題点をほぼ解決できる。
[Table] As can be seen from Table 2, samples No. 1 to 3 satisfy the above-mentioned ranges for x, y, and z, and the firing temperature is as high as 1500°C, so they are suitable for use in dielectric resonators. It fully satisfies the material requirements. That is, the relative dielectric constant is in the range of about 30 to 35, with little variation, and tan δ is also smaller than 5×10 −4 . On the other hand, samples No. 4 to 9 have x, y, z
Since any one of these is outside the above-mentioned range, it is found that the material is unsuitable as a material for a dielectric resonator. Describing samples Nos. 4 to 9 in more detail,
In Samples Nos. 4 to 9, the Ba content is outside the range of the present invention, and in Samples Nos. 5 to 9, the Ca composition is also outside the range. In these examples, the change in dielectric constant is relatively large, and tan δ also becomes larger than 5×10 −4 . Samples No. 7 and 8 are examples that do not contain either Ba or Sr, but both had poor sinterability and were impossible to measure. Furthermore, other experiments have shown that tan δ is also affected by the firing temperature, and generally tan δ increases as the firing temperature decreases. It was confirmed that the suitable firing temperature for the dielectric resonator material is 1450°C or higher. FIGS. 1 to 3 show the relationship between the composition of the ceramic composition, relative permittivity, temperature coefficient of permittivity, and tan δ, respectively. The region surrounded by thick lines and broken lines represents the composition range according to the present invention. As is clear from these graphs, the ceramic composition according to the present invention satisfies all the conditions necessary for the dielectric resonance material described above, whereas the ceramic composition according to the present invention outside the composition range It can be seen that this material is not suitable as a material for a dielectric resonator, and in particular, the tan δ is considerably larger than 5×10 −4 . Note that the ceramic material according to the present invention can of course be applied not only as a material for microwave dielectric resonators, but also for microwave chip capacitors and the like. As explained above, according to the present invention, tanδ
< 5 × 10 -4 and then changing the composition and changing the temperature coefficient of permittivity, the change in relative permittivity is significantly smaller than in the conventional example, which is a problem with the conventional technology. can almost be solved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は磁器組成物の組成と比誘電率との関係
を示す組成図、第2図は組成と誘電率の温度係数
との関係を示す組成図、第3図は組成とtanδとの
関係を示す組成図である。
Figure 1 is a composition diagram showing the relationship between the composition and relative permittivity of a porcelain composition, Figure 2 is a composition diagram showing the relationship between the composition and the temperature coefficient of permittivity, and Figure 3 is the relationship between composition and tanδ. FIG.

Claims (1)

【特許請求の範囲】 1 (CaxSryBaz)ZrO3で表わされる組成(但、
x+y+z=1)を有し、 0.88≦x<1 0<y≦0.1 0<z≦0.035 であり、1450℃以上の温度で焼成されたことを特
徴とするマイクロ波用誘電体磁器組成物。
[Claims] 1 (CaxSryBaz) A composition represented by ZrO 3 (however,
x+y+z=1), 0.88≦x<1 0<y≦0.1 0<z≦0.035, and is fired at a temperature of 1450° C. or higher.
JP60268107A 1985-11-28 1985-11-28 Dielectric ceramic composition for microwave Granted JPS61141669A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60268107A JPS61141669A (en) 1985-11-28 1985-11-28 Dielectric ceramic composition for microwave

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60268107A JPS61141669A (en) 1985-11-28 1985-11-28 Dielectric ceramic composition for microwave

Publications (2)

Publication Number Publication Date
JPS61141669A JPS61141669A (en) 1986-06-28
JPS6350309B2 true JPS6350309B2 (en) 1988-10-07

Family

ID=17453993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60268107A Granted JPS61141669A (en) 1985-11-28 1985-11-28 Dielectric ceramic composition for microwave

Country Status (1)

Country Link
JP (1) JPS61141669A (en)

Also Published As

Publication number Publication date
JPS61141669A (en) 1986-06-28

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