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JPS6352804B2 - - Google Patents
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JPS6352804B2 - - Google Patents

Info

Publication number
JPS6352804B2
JPS6352804B2 JP56202022A JP20202281A JPS6352804B2 JP S6352804 B2 JPS6352804 B2 JP S6352804B2 JP 56202022 A JP56202022 A JP 56202022A JP 20202281 A JP20202281 A JP 20202281A JP S6352804 B2 JPS6352804 B2 JP S6352804B2
Authority
JP
Japan
Prior art keywords
insulated
resistor
series
circuit
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56202022A
Other languages
Japanese (ja)
Other versions
JPS58102575A (en
Inventor
Shozo Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP56202022A priority Critical patent/JPS58102575A/en
Publication of JPS58102575A publication Critical patent/JPS58102575A/en
Publication of JPS6352804B2 publication Critical patent/JPS6352804B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Networks Using Active Elements (AREA)

Description

【発明の詳細な説明】 この発明は、入力側と出力側とが絶縁されてい
てかつ入力側から出力側の抵抗値を制御すること
が可能な絶縁型可変抵抗装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an isolated variable resistance device in which an input side and an output side are insulated and the resistance value of the output side can be controlled from the input side.

従来、この種の装置としては、LEDとホトト
ランジスタ、LEDとホトダイオード、LEDとCds
の如きホトカプラが多く用いられていた。しか
し、これらのものは、LEDの発光量を制御して
ホトトランジスタ・ホトダイオードあるいはCdS
の等価抵抗値を変えるものであるため、入出力特
性のバラツキが大きい欠点があつた。すなわち、
LEDの発光効率、LEDとホトトランジスタ等と
の結合度、ホトトランジスタ等の光電流特性など
のバラツキがそのまま入出力特性のバラツキとな
つていた。また、温度依存性が大きい欠点もあつ
た。さらにホトトランジスタやホトダイオードは
本質的に電流制御素子であるから、回路の変化に
より等価抵抗値が影響をうける欠点があつた。
Conventionally, this type of device includes LED and phototransistor, LED and photodiode, LED and Cds.
Many photocouplers were used. However, these devices control the amount of light emitted from the LED and use phototransistors, photodiodes, or CdS.
Since it changes the equivalent resistance value of the circuit, it has the drawback of large variations in input/output characteristics. That is,
Variations in the luminous efficiency of LEDs, the degree of coupling between LEDs and phototransistors, etc., and the photocurrent characteristics of phototransistors, etc., directly lead to variations in input/output characteristics. Another drawback was that it was highly temperature dependent. Furthermore, since phototransistors and photodiodes are essentially current control elements, they have the disadvantage that the equivalent resistance value is affected by changes in the circuit.

この発明はこのように事情に鑑みてなされたも
ので、上記欠点を解消した絶縁型可変抵抗装置を
提供する。
The present invention has been made in view of the above circumstances, and provides an insulated variable resistance device that eliminates the above-mentioned drawbacks.

以下、図に示す実施例に基いて、この発明を詳
説明する。
Hereinafter, the present invention will be explained in detail based on embodiments shown in the drawings.

第1図に示す1はこの発明の絶縁型可変抵抗装
置の一実施例であり、LED2aとホトトランジ
タ2bとからなるホトカプラ2、そのホトカプラ
2のLED2aをパルスドライブするパルスドラ
イブ回路3、前記ホトカプラ2のホトトランジス
タ2bの直列接続された抵抗器rおよびその抵抗
器rとホトトランジスタ2bとによる直列回路に
並列接続されたコンデンサcを具備して基本的に
構成されている。
Reference numeral 1 shown in FIG. 1 is an embodiment of the insulated variable resistance device of the present invention, which includes a photocoupler 2 consisting of an LED 2a and a phototransistor 2b, a pulse drive circuit 3 for pulse-driving the LED 2a of the photocoupler 2, and a pulse drive circuit 3 for pulse-driving the LED 2a of the photocoupler 2. It basically comprises a resistor r connected in series with the phototransistor 2b, and a capacitor c connected in parallel to the series circuit formed by the resistor r and the phototransistor 2b.

ホトカプラ2は、LEDとホトダイオード、
LEDとCdSなどの組合せでもよく、またLEDと
ホトトランジスタ等との距離を遠く離してこれら
を光フアイバ等で結合したものであつてもよい。
Photocoupler 2 includes an LED and a photodiode,
It may be a combination of an LED and a CdS, or it may be a combination of an LED and a phototransistor, etc., separated by a long distance, and coupled with an optical fiber or the like.

パルスドライブ回路3は、第2図に示すよう
に、T0時間(たとえば10μsec.)毎にT1時間だけ
LED2aにドライブ電流i0を供給するものであ
り、T1時間を0〜T0の間で任意に設定変更可能
にされている。また、ドライブ電流i0の大きさは
ホトトランジスタ2bを完全に導電させる大きさ
に設定されている。そこで、ホトトランジスタ2
bはT0時間毎にT1時間だけONされることにな
り、T0時間に対するT1時間の比すなわち通電率
αは0〜1の間で任意に変更できる。第3図に示
す3′は、上記パルスドライブ回路3の具体的な
一例であり、アンプA1およびA2から三角波発生
回路と、コンパレータA3とから構成されている。
ポテンシヨメータなどによつてコンパレータA3
の比較電圧Viを変えると、通電率αを0〜1の範
囲で変化できる。T0は、三角波の周期によつて
決定される。
As shown in Fig. 2, the pulse drive circuit 3 operates only for T 1 hour every T 0 time (for example, 10 μsec.).
A drive current i0 is supplied to the LED 2a, and the T1 time can be set arbitrarily between 0 and T0 . Further, the magnitude of the drive current i 0 is set to a magnitude that completely conducts the phototransistor 2b. Therefore, phototransistor 2
b is turned ON for only T 1 hour every T 0 hour, and the ratio of T 1 hour to T 0 hour, that is, the energization rate α can be arbitrarily changed between 0 and 1. 3' shown in FIG. 3 is a specific example of the pulse drive circuit 3, which is composed of amplifiers A1 and A2 , a triangular wave generation circuit, and a comparator A3 .
Comparator A 3 by potentiometer etc.
By changing the comparison voltage V i , the energization rate α can be changed in the range of 0 to 1. T 0 is determined by the period of the triangular wave.

第1図を再び参照して説明すると、抵抗器rお
よびコンデンサCの値はそれらによる時定数が前
記T0により十分大(たとえば100倍以上)になる
ように選定されている。
Referring again to FIG. 1, the values of resistor r and capacitor C are selected such that their time constant is sufficiently larger (for example, 100 times or more) than T 0 .

そこで、抵抗器rを流れる電流は実際にはパル
ス状であるが、コンデンサCの働きを考慮した定
常状態を考えると、点P−Q間の電位差Vは略一
定となり、かつ実質的に一定の電流Iが点P−Q
間を流れると考えられる。
Therefore, although the current flowing through resistor r is actually pulse-like, if we consider a steady state that takes into account the function of capacitor C, the potential difference V between points P and Q is approximately constant, and is substantially constant. Current I is at point P-Q
It is thought that it flows between

さて、定常状態でT0時間当りに点P−Q間を
流れる電気量qを考えると、電流値が1であるか
ら、 q=I・T0 ……(1) である。ところが、実際に流れる電気量はホトト
ランジスタ2bを流れるものだけであるから、抵
抗器rの抵抗値をrとして、 q=V/r・T1 ……(2) である。これら(1)(2)式よりqを消去して整理すれ
ば、 l=V/r・T1/T0 ……(3) となる。
Now, considering the amount of electricity q flowing between points P and Q per T 0 time in a steady state, since the current value is 1, q=I·T 0 ...(1). However, since the amount of electricity that actually flows is only that flowing through the phototransistor 2b, q=V/r·T 1 (2) where r is the resistance value of resistor r. If we eliminate q from these equations (1) and (2) and rearrange them, we get l=V/r・T 1 /T 0 ...(3).

点P−Q間の等価抵抗値Rは、(3)式を考慮し
て、 R=V/1=r・T0/T1=r/α ……(4) ただし、T1/T0=α となる。
The equivalent resistance value R between points P and Q is calculated as follows, considering equation (3): R=V/1=r・T 0 /T 1 = r/α ……(4) However, T 1 /T 0 = α.

(4)式より、点P−Q間の等価抵抗値Rは、抵抗
器rの抵抗値rに比例し、通電率αに逆比例して
決まることが分るが、この装置1においてαは0
〜1の間で可変であるから、結局、等価抵抗値R
はr〜∞の間で可変である。
From equation (4), it can be seen that the equivalent resistance value R between points P and Q is determined in proportion to the resistance value r of resistor r and inversely proportional to the energization rate α; however, in this device 1, α is 0
Since it is variable between ~1, the equivalent resistance value R
is variable between r and ∞.

第4図に示す10は、上記装置1を利用したサ
ーモスタツト回路の一例である。この回路10
は、サーミスタRTが低温であるときはコンパレ
ータ11がリレーコイル12を通電し、サーミス
タ(RT)が高温になるとリレーコイル12の通
電を停止するように働く。この切変わりの動作点
は、次式が満たされる点である。
Reference numeral 10 shown in FIG. 4 is an example of a thermostat circuit using the device 1 described above. This circuit 10
The comparator 11 energizes the relay coil 12 when the thermistor R T is at a low temperature, and stops the relay coil 12 from energizing when the thermistor (R T ) reaches a high temperature. The operating point of this switching is the point where the following equation is satisfied.

R1+R/RT=R2/R3 ……(5) この(5)式より、等価抵抗値Rを変えることによ
つて動作点を変えられることが分る。つまり、R
を大にすれば動作点は低温側に移動し、Rを小に
すれば動作点は高温側に移動する。
R 1 +R/R T =R 2 /R 3 (5) From equation (5), it can be seen that the operating point can be changed by changing the equivalent resistance value R. In other words, R
If R is made large, the operating point will move to the low temperature side, and if R is made small, the operating point will be moved to the high temperature side.

以上の説明から理解されるように、この発明の
絶縁型可変抵抗装置は、入力側と出力側とが絶縁
され、かつ入力信号に応じて出力がON/OFFさ
れる絶縁型スイツチ手段に対し、その入力側に前
記ON/OFFの時間比を可変制御する通電率制御
手段を接続すると共に、一方の出力側に抵抗器を
直列接続し、さらにその直列回路に並列にコンデ
ンサを接続してなるものであり、通電率を変化さ
せることによつて等価抵抗値を変更することがで
きる。そして、その等価抵抗値は前記(4)式で示さ
れるように通電率と抵抗器の抵抗値とで決まるか
ら、バラツキが従来より著しく小さくなる。ま
た、温度依存性も小さくなる。また、回路電圧に
等価抵抗値が影響されることもなくなる。さらに
通電率を制御する方式なので、アナログ的ノズル
に強く、入力側と出力側が絶縁されていることか
ら、絶縁型スイツチ手段と通電率制御手段とを遠
く離すことができ、遠隔制御システムに好適に利
用することができる特長もある。
As can be understood from the above description, the insulated variable resistance device of the present invention has an insulated switch means whose input side and output side are insulated and whose output is turned ON/OFF according to an input signal. An energization rate control means for variable control of the ON/OFF time ratio is connected to the input side, a resistor is connected in series to one output side, and a capacitor is connected in parallel to the series circuit. The equivalent resistance value can be changed by changing the energization rate. Since the equivalent resistance value is determined by the current conductivity and the resistance value of the resistor as shown in equation (4) above, the variation is significantly smaller than in the past. Furthermore, temperature dependence is also reduced. Furthermore, the equivalent resistance value is no longer affected by the circuit voltage. Furthermore, since it is a method that controls the energization rate, it is resistant to analog nozzles, and since the input side and output side are insulated, the insulated switch means and the energization rate control means can be separated far apart, making it suitable for remote control systems. There are also features that can be used.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の絶縁型可変抵抗装置の一実
施例の構成説明図、第2図は第1図に示す装置に
おけるLEDのドライブ電流波形図、第3図は第
1図に示す装置におけるパルスドライブ回路の具
体的一例の回路構成図、第4図は第1図に示す装
置を用いたサーモスタツト回路の構成説明図であ
る。 1……絶縁型可変抵抗装置、2……ホトカプ
ラ、3……パルスドライブ回路、r……抵抗器、
C……コンデンサ。
FIG. 1 is an explanatory diagram of the configuration of one embodiment of the insulated variable resistance device of the present invention, FIG. 2 is a diagram of the LED drive current waveform in the device shown in FIG. 1, and FIG. 3 is a diagram of the LED drive current waveform in the device shown in FIG. FIG. 4 is a circuit configuration diagram of a specific example of a pulse drive circuit, and FIG. 4 is an explanatory diagram of the configuration of a thermostat circuit using the device shown in FIG. 1. 1...Insulated variable resistance device, 2...Photocoupler, 3...Pulse drive circuit, r...Resistor,
C...Capacitor.

Claims (1)

【特許請求の範囲】 1 入力側と出力側とが絶縁され、かつ入力信号
に応じて出力がON/OFFされる絶縁型スイツチ
手段に対し、その入力側に前記ON/OFFの時間
比を可変制御する通電率制御手段を接続すると共
に、一方の出力側に抵抗器を直列接続し、さらに
その直列回路に並列にコンデンサを接続して形成
される直並列回路を、抵抗器を介して直流電源に
接続し、前記直並列回路の抵抗器とコンデンサと
による放電時定数を前記直並列回路の両端電圧が
略一定になるように設定してなる絶縁型可変抵抗
装置。 2 絶縁型スイツチ手段が、ホトカプラである特
許請求の範囲第1項記載の絶縁型可変抵抗装置。
[Claims] 1. An insulated switch means whose input side and output side are insulated and whose output is turned ON/OFF according to an input signal, wherein the input side is provided with a variable ON/OFF time ratio. A series-parallel circuit formed by connecting a resistor in series to one output side, and further connecting a capacitor in parallel to the series circuit, is connected to a DC power source via the resistor. an insulated variable resistance device, wherein a discharge time constant of a resistor and a capacitor of the series-parallel circuit is set so that a voltage across the series-parallel circuit is substantially constant. 2. The insulated variable resistance device according to claim 1, wherein the insulated switch means is a photocoupler.
JP56202022A 1981-12-14 1981-12-14 Insulating type variable resistor device Granted JPS58102575A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56202022A JPS58102575A (en) 1981-12-14 1981-12-14 Insulating type variable resistor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56202022A JPS58102575A (en) 1981-12-14 1981-12-14 Insulating type variable resistor device

Publications (2)

Publication Number Publication Date
JPS58102575A JPS58102575A (en) 1983-06-18
JPS6352804B2 true JPS6352804B2 (en) 1988-10-20

Family

ID=16450620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56202022A Granted JPS58102575A (en) 1981-12-14 1981-12-14 Insulating type variable resistor device

Country Status (1)

Country Link
JP (1) JPS58102575A (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5338067A (en) * 1976-09-20 1978-04-07 Hitachi Metals Ltd Steel pipe storage conveyor
JPS5452448A (en) * 1977-10-03 1979-04-25 Toshiba Corp Signal transfer circuit

Also Published As

Publication number Publication date
JPS58102575A (en) 1983-06-18

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