JPS643063B2 - - Google Patents
Info
- Publication number
- JPS643063B2 JPS643063B2 JP18130982A JP18130982A JPS643063B2 JP S643063 B2 JPS643063 B2 JP S643063B2 JP 18130982 A JP18130982 A JP 18130982A JP 18130982 A JP18130982 A JP 18130982A JP S643063 B2 JPS643063 B2 JP S643063B2
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- operating potential
- branched
- supply line
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
- H10W44/203—Electrical connections
- H10W44/206—Wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/547—Dispositions of multiple bond wires
- H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】
本願は、端子の構造を改良した集積回路に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present application relates to an integrated circuit with an improved terminal structure.
従来の集積回路用パツケージの端子構造は、全
ての端子が一様であり、電源供電用の端子の構造
も信号用の端子の構造も一様であつた(例えば特
公昭49−13112号公報参照)。これを高速の論理回
路やメモリー回路に用いた場合、特に出力電流を
給電する端子のインダクタンスにより誘起電力が
発生し他の回路へ雑音電圧として作用する欠点が
あつた。このため論理回路等では、出力電流を供
電する端子を別に設ける等の対策を行なつてい
る。 In the conventional integrated circuit package, all the terminals had the same structure, and the structures of the power supply terminals and the signal terminals were also uniform (for example, see Japanese Patent Publication No. 13112/1983). ). When this is used in high-speed logic circuits or memory circuits, there is a drawback that electromotive force is generated due to the inductance of the terminal that supplies the output current, which acts as a noise voltage on other circuits. For this reason, countermeasures are taken in logic circuits and the like, such as providing a separate terminal for supplying output current.
第1図においてメモリーセルアレー1からセン
ス回路2により読み出された情報信号はエミツタ
結合トランジスタQ1およびQ2で構成する電流切
り換え回路へ送られる。トランジスタQ3は集積
回路の出力用トランジスタであり、そのコレクタ
電流は情報により異なり一般的に論理出力が高電
位時22mA流れ、論理出力が低電位時4mA流れ
る。すなわち18mAの電流が高速に切り換わる。 In FIG. 1, an information signal read out from a memory cell array 1 by a sense circuit 2 is sent to a current switching circuit composed of emitter-coupled transistors Q 1 and Q 2 . Transistor Q3 is an output transistor of the integrated circuit, and its collector current varies depending on the information, and generally 22 mA flows when the logic output is at a high potential, and 4 mA flows when the logic output is at a low potential. In other words, the 18mA current switches quickly.
この電流は集積回路用パツケージの端子を流れ
る訳であり、この端子のインダクタンスが10μH
時90mVの誘起電圧を生ずる。(出力電流の立ち
上り立ち下り時間を2nsとして算出)従来のメモ
リー集積回路においては、電源供給線3と4を同
一のパツケージ端子に接続していたため、この誘
起電圧は、メモリーセルアレー1およびセンス回
路2へ雑音電圧として加わり誤動作の原因となり
得る。この問題の解決策としては、電源供給線3
と4を分離する解決策もあるが、端子数が増大
し、実装効率の低下を招く。 This current flows through the terminal of the integrated circuit package, and the inductance of this terminal is 10 μH.
It produces an induced voltage of 90mV. (Calculated assuming the output current rise and fall times are 2 ns) In conventional memory integrated circuits, power supply lines 3 and 4 are connected to the same package terminal, so this induced voltage is generated between the memory cell array 1 and the sense circuit. 2 as a noise voltage and may cause malfunction. As a solution to this problem, the power supply line 3
Although there is a solution to separate 4 and 4, the number of terminals increases and the mounting efficiency decreases.
本発明の目的は、メモリー集積回路等、その実
装面から端子数を少なくする要求を満たし、更に
出力電流の切り換わり時に発生する誘起電圧によ
るメモリー回路への雑音電圧を低下させる集積回
路を提供することを目的とする。 SUMMARY OF THE INVENTION An object of the present invention is to provide an integrated circuit that satisfies the need to reduce the number of terminals in terms of mounting aspects of memory integrated circuits, etc., and further reduces the noise voltage applied to the memory circuit due to the induced voltage generated when switching the output current. The purpose is to
上記目的を達成するために本発明は、メモリセ
ルアレー1と、該メモリセルアレー1より読み出
された情報信号に応答するエミツタ結合トランジ
スタQ1,Q2と、該エミツタ結合トランジスタQ1,
Q2の一方のトランジスタQ1のコレクタの信号に
そのベースが応答する出力用トランジスタQ3と、
上記メモリセルアレー1と上記エミツタ結合トラ
ンジスタQ1,Q2とに所定の動作電位を供給する
ための第1動作電位供給線3と、上記出力用トラ
ンジスタQ3に所定の動作電位を供給するための
第2動作電位供給線4と、分岐した一方の端子1
7Aと分岐した他方の端子17Bとこれら分岐端
子17A,17Bとに接続された共通部17Cと
を有する分岐型端子17と、該分岐型端子17の
該分岐した一方の端子17Aと上記第1動作電位
供給線3とを接続する第1金属線15と、該分岐
型端子17の該分岐した他方の端子17Bと上記
第2動作電位供給線4とを接続する第2金属線1
5とを具備することを要旨とする。 To achieve the above object, the present invention includes a memory cell array 1, emitter-coupled transistors Q 1 and Q 2 that respond to information signals read from the memory cell array 1, and emitter-coupled transistors Q 1 and Q 2 .
an output transistor Q 3 whose base responds to a signal at the collector of one transistor Q 1 of Q 2 ;
A first operating potential supply line 3 for supplying a predetermined operating potential to the memory cell array 1 and the emitter-coupled transistors Q 1 and Q 2 , and a first operating potential supply line 3 for supplying a predetermined operating potential to the output transistor Q 3 The second operating potential supply line 4 and one branched terminal 1
7A, the other branched terminal 17B, and a common part 17C connected to these branched terminals 17A, 17B, and the branched terminal 17A of the branched terminal 17 and the first operation. A first metal wire 15 that connects the potential supply line 3 and a second metal wire 1 that connects the other branched terminal 17B of the branch type terminal 17 and the second operating potential supply line 4.
5.
以下、本願発明の実施例をより詳細に説明す
る。 Examples of the present invention will be described in more detail below.
第2図に本発明の集積回路用パツケージ11に
於いて端子が見える様に平面図として示したもの
であり、端子16は従来構造の端子である。端子
17および端子18が本願に因る分岐形端子であ
り、ここでは端子17について説明する集積回路
13上に設けられたパツド19,19A,19B
と、金属線15を用いて端子17を接続して供電
する訳であるが分岐した一方の端子17Aを第1
図の電源供給線3が接続されたパツド19Aに接
続し他の一方の端子17Bを第1図の電源供給線
4が接続されたパツド19Bに接続する。 FIG. 2 is a plan view showing the terminals of the integrated circuit package 11 of the present invention, and the terminals 16 are of a conventional structure. Terminal 17 and terminal 18 are branch type terminals according to the present application, and here terminal 17 will be described as pads 19, 19A, and 19B provided on integrated circuit 13.
The terminal 17 is connected using the metal wire 15 to supply power, but one of the branched terminals 17A is connected to the first terminal 17A.
The terminal 17B is connected to the pad 19A to which the power supply line 3 shown in the figure is connected, and the other terminal 17B is connected to the pad 19B to which the power supply line 4 shown in FIG. 1 is connected.
第3図は従来端子16と本発明の分岐型端子1
7の構造の違いを更に詳しく示すため集積回路パ
ツケージを正面から示した図である。分岐した端
子17Aと17Bとは端子17の、パツケージ1
1の面に垂直な方向の足17C(共通部)の所で
接続されている。 Figure 3 shows a conventional terminal 16 and a branch type terminal 1 of the present invention.
7 is a diagram showing the integrated circuit package from the front in order to show the difference in structure of FIG. 7 in more detail. The branched terminals 17A and 17B are the package 1 of the terminal 17.
They are connected at a leg 17C (common part) in a direction perpendicular to the plane of the first part.
こうすることにより、電源供給線4に出力電流
の切り換わりにより誘起電圧が発生しても、端子
17の如く分岐点が実装基板(図示せず)内の電
源供給板(図示せず)に接近しているため、電源
供給線17Aの電位は一定であり分離した場合と
同様の効果を生じ得る。 By doing this, even if an induced voltage is generated in the power supply line 4 due to switching of the output current, the branch point such as the terminal 17 will not approach the power supply board (not shown) in the mounting board (not shown). Therefore, the potential of the power supply line 17A is constant, and the same effect as when separated can be produced.
第1図は従来の集積回路用回路図であり、第2
図は本発明の実施例を示す集積回路の平面図であ
り、第3図はその正面図である。
Figure 1 is a circuit diagram for a conventional integrated circuit;
The figure is a plan view of an integrated circuit showing an embodiment of the present invention, and FIG. 3 is a front view thereof.
Claims (1)
に応答するエミツタ結合トランジスタと、 該エミツタ結合トランジスタの一方のトランジ
スタのコレクタの信号にそのベースが応答する出
力用トランジスタと、 上記メモリセルアレーと上記エミツタ結合トラ
ンジスタとに所定の動作電位を供給するための第
1動作電位供給線と、 上記出力用トランジスタに所定の動作電位を供
給するための第2動作電位供給線と、 分岐した一方の端子と分岐した他方の端子とこ
れら分岐端子とに接続された共通部とを有する分
岐型端子と、 該分岐型端子の該分岐した一方の端子と上記第
1動作電位供給線とを接続する第1金属線と、 該分岐型端子の該分岐した他方の端子と上記第
2動作電位供給線とを接続する第2金属線とを具
備することを特徴とする集積回路。 2 上記メモリセルアレーより読み出された上記
情報信号はセンス回路を介して上記エミツタ結合
トランジスタに伝達され、該センス回路は上記分
岐型端子の上記分岐した一方の端子から給電され
ることを特徴とする特許請求の範囲第1項記載の
集積回路。[Claims] 1. An integrated circuit comprising: a memory cell array; an emitter-coupled transistor responsive to an information signal read from the memory cell array; and a signal at the collector of one of the emitter-coupled transistors. an output transistor whose base responds; a first operating potential supply line for supplying a predetermined operating potential to the memory cell array and the emitter-coupled transistor; and a first operating potential supply line for supplying a predetermined operating potential to the output transistor. a second operating potential supply line for the branched terminal; a branched terminal having one branched terminal, the other branched terminal, and a common part connected to these branched terminals; A first metal line connecting the terminal and the first operating potential supply line; and a second metal line connecting the other branched terminal of the branch type terminal and the second operating potential supply line. An integrated circuit characterized by: 2. The information signal read from the memory cell array is transmitted to the emitter-coupled transistor via a sense circuit, and the sense circuit is supplied with power from one of the branched terminals of the branch type terminal. An integrated circuit according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57181309A JPS5878448A (en) | 1982-10-18 | 1982-10-18 | Package for integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57181309A JPS5878448A (en) | 1982-10-18 | 1982-10-18 | Package for integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5878448A JPS5878448A (en) | 1983-05-12 |
| JPS643063B2 true JPS643063B2 (en) | 1989-01-19 |
Family
ID=16098418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57181309A Granted JPS5878448A (en) | 1982-10-18 | 1982-10-18 | Package for integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5878448A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59171152A (en) * | 1983-03-17 | 1984-09-27 | Nec Corp | Semiconductor device |
| JPS6420747U (en) * | 1987-07-27 | 1989-02-01 | ||
| US4979016A (en) * | 1988-05-16 | 1990-12-18 | Dallas Semiconductor Corporation | Split lead package |
| JPH02213148A (en) * | 1989-02-14 | 1990-08-24 | Seiko Epson Corp | Tape carrier |
| JPH0320447U (en) * | 1989-07-06 | 1991-02-28 |
-
1982
- 1982-10-18 JP JP57181309A patent/JPS5878448A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5878448A (en) | 1983-05-12 |
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