JPS649744B2 - - Google Patents
Info
- Publication number
- JPS649744B2 JPS649744B2 JP58073183A JP7318383A JPS649744B2 JP S649744 B2 JPS649744 B2 JP S649744B2 JP 58073183 A JP58073183 A JP 58073183A JP 7318383 A JP7318383 A JP 7318383A JP S649744 B2 JPS649744 B2 JP S649744B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal electrode
- electrode
- solar cell
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
Landscapes
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明はアモルフアスシリコン（以下ａ−Siと
記す）層に発生した光起電力の取出しのために表
面を覆つて金属電極が設けられるａ−Si太陽電池
に関する。[Detailed description of the invention] [Technical field to which the invention pertains] The present invention relates to an amorphous silicon (hereinafter referred to as a-Si) layer in which a metal electrode is provided covering the surface of the layer in order to take out photovoltaic force generated in the layer. -Relating to Si solar cells.
ａ−Si太陽電池の電極としては光の入射側には
透明導電膜からなる透明電極が全面に設けられる
が、それに対向する電極には金属電極が全面に設
けられるのが一般的である。この種の金属電極と
してはアルミニウム電極あるいはアルミニウムと
チタンの積層電極が知られている。しかしこれら
の電極をAlあるいはTiの蒸着により形成する場
合、金属のスプラツシユあるいは突沸により金属
粒子が衝突しａ−Si層に損傷を与えることがしば
しばあり、太陽電池の製造歩留りを低下させる原
因となつていた。
As for the electrodes of an a-Si solar cell, a transparent electrode made of a transparent conductive film is provided on the entire surface of the light incident side, and a metal electrode is generally provided on the entire surface of the opposite electrode. As this type of metal electrode, an aluminum electrode or a laminated electrode of aluminum and titanium is known. However, when these electrodes are formed by vapor deposition of Al or Ti, metal particles often collide with each other due to metal splash or bumping, damaging the a-Si layer, which reduces the manufacturing yield of solar cells. was.
本発明は、上述の欠点を除去してより安定した
製造技術により製作できるａ−Si太陽電池に提供
することを目的とする。
It is an object of the present invention to provide an a-Si solar cell that can be manufactured using a more stable manufacturing technology by eliminating the above-mentioned drawbacks.
本発明はａ−Si太陽電池の金属電極とａ−Si層
との間に昇華性導電物質よりなる中間層が介在す
ることにつて金属電極蒸着時のａ−Si層に対する
金属粒子の作用を緩衝して上述の目的を達成す
る。昇華性導電物質としてはITO（インジウム、
すず酸化物）、SnO2が用いられる。
In the present invention, an intermediate layer made of a sublimable conductive material is interposed between the metal electrode and the a-Si layer of an a-Si solar cell to buffer the effect of metal particles on the a-Si layer during metal electrode deposition. to achieve the above objectives. ITO (indium,
tin oxide), SnO 2 is used.
第１図は本発明の一実施例を示すもので、ａ−
Si層３は、例えばシランのグロー放電分解により
透明絶縁基板、例えば１mmの厚さのガラス板１の
上に例えば20〜200nｍの厚さの透明導電膜から
なる透明電極２を介して成膜されている。ａ−Si
層３は例えば1μｍの厚さを有し、その上に全面
に蒸着により昇華性導電物質、例えば20〜100n
ｍの厚さのITO、SnO2などの膜４が形成され、
その上を従来と同様に蒸着法により成膜された
AlあるいはAl／Tiの金属電極５が覆つている。
金属電極の厚さは、例えば１〜2μｍである。
FIG. 1 shows an embodiment of the present invention.
The Si layer 3 is formed, for example, by glow discharge decomposition of silane on a transparent insulating substrate, for example, a glass plate 1 with a thickness of 1 mm, via a transparent electrode 2 made of a transparent conductive film with a thickness of 20 to 200 nm, for example. ing. a-Si
The layer 3 has a thickness of, for example, 1 μm, and a sublimable conductive material, for example, 20 to 100 nm, is deposited on the entire surface by vapor deposition.
A film 4 of ITO, SnO 2 , etc. with a thickness of m is formed,
On top of that, a film was formed using the conventional vapor deposition method.
It is covered with a metal electrode 5 of Al or Al/Ti.
The thickness of the metal electrode is, for example, 1 to 2 μm.
本発明によれば、ａ−Si太陽電池の電極構造に
おいて、金属電極とａ−Si層の間に緩衝材として
昇華性導電物質を挿入する。昇華性導電物質は蒸
着時にスプラツシユ、突沸等が少ないのでａ−Si
層に障害を与えることがなく、その上に金属電極
を蒸着する際にスプラツシユ、突沸等により衝突
する金属粒子に対してａ−Si層を保護する役目を
する。従つてａ−Si層の損傷による不良率は低下
し、ａ−Si太陽電池の安定した製造技術が得られ
る。
According to the present invention, in the electrode structure of an a-Si solar cell, a sublimable conductive material is inserted as a buffer between the metal electrode and the a-Si layer. Sublimable conductive materials cause less splashing and bumping during vapor deposition, so a-Si
It does not damage the layer and serves to protect the a-Si layer from metal particles colliding with it due to splashes, bumping, etc. when metal electrodes are deposited thereon. Therefore, the defect rate due to damage to the a-Si layer is reduced, and a stable manufacturing technology for a-Si solar cells can be obtained.
第１図は本発明の一実施例の断面図である。
３：ａ−Si層、４：昇華性導電物質層、５：金
属電極。
FIG. 1 is a sectional view of an embodiment of the present invention. 3: a-Si layer, 4: sublimable conductive material layer, 5: metal electrode.
Claims (1)
フアスシリコン層を設け、該層を全面的に覆うよ
うに金属電極を形成して、前記基板側からの入射
光により発電を行う太陽電池において、前記アモ
ルフアスシリコン層と金属電極との間に昇華性導
電物質よりなる中間層が介在することを特徴とす
るアモルフアスシリコン太陽電池。1. A solar cell in which an amorphous silicon layer is provided on a transparent insulating substrate via a transparent conductive film, a metal electrode is formed so as to completely cover the layer, and power is generated using incident light from the substrate side, An amorphous silicon solar cell characterized in that an intermediate layer made of a sublimable conductive material is interposed between the amorphous silicon layer and the metal electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58073183A JPS59198774A (en) | 1983-04-26 | 1983-04-26 | Amorphous silicon solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58073183A JPS59198774A (en) | 1983-04-26 | 1983-04-26 | Amorphous silicon solar battery |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5236080A Division JP2746074B2 (en) | 1993-09-22 | 1993-09-22 | Manufacturing method of amorphous silicon solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59198774A JPS59198774A (en) | 1984-11-10 |
| JPS649744B2 true JPS649744B2 (en) | 1989-02-20 |
Family
ID=13510763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58073183A Granted JPS59198774A (en) | 1983-04-26 | 1983-04-26 | Amorphous silicon solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59198774A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0272564U (en) * | 1988-11-24 | 1990-06-01 | ||
| JP3106786B2 (en) * | 1993-08-26 | 2000-11-06 | 松下電器産業株式会社 | Semiconductor device and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5943102B2 (en) * | 1979-12-14 | 1984-10-19 | 富士電機株式会社 | solar cells |
-
1983
- 1983-04-26 JP JP58073183A patent/JPS59198774A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59198774A (en) | 1984-11-10 |
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