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JPH0136977B2 - - Google Patents
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JPH0136977B2 - - Google Patents

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Publication number
JPH0136977B2
JPH0136977B2 JP58172799A JP17279983A JPH0136977B2 JP H0136977 B2 JPH0136977 B2 JP H0136977B2 JP 58172799 A JP58172799 A JP 58172799A JP 17279983 A JP17279983 A JP 17279983A JP H0136977 B2 JPH0136977 B2 JP H0136977B2
Authority
JP
Japan
Prior art keywords
cell
molecular beam
substrate
mbe
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58172799A
Other languages
Japanese (ja)
Other versions
JPS6063918A (en
Inventor
Shunichi Murakami
Tetsuo Ishida
Sumio Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to JP58172799A priority Critical patent/JPS6063918A/en
Publication of JPS6063918A publication Critical patent/JPS6063918A/en
Publication of JPH0136977B2 publication Critical patent/JPH0136977B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416Nitrides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【発明の詳細な説明】 本発明は、半導体装置に用いられる薄膜を形成
する為の分子線源用セルの改良に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in molecular beam source cells for forming thin films used in semiconductor devices.

従来、質の良い半導体結晶薄膜をエピタキシヤ
ル成長させる技術として分子ビーム・エピタサシ
ヤル成長(以下、MBEと略す)法が用いられて
いるそして、この技術を実施するには、超高真空
に維持された容器中に液体窒素温度の壁に囲まれ
た分子線源用セルを配置し、このセルの中に結晶
成長させようとする薄膜結晶のソース物質(構成
元素)を入れ、加熱することに依り分子線として
噴出させ、これを適当な温度に維持した基板上に
堆積させて単結晶薄膜を成長させるようにしてい
る。
Conventionally, molecular beam epitaxy (hereinafter referred to as MBE) has been used as a technology for epitaxially growing high-quality semiconductor crystal thin films. A molecular beam source cell surrounded by liquid nitrogen-temperature walls is placed in a container, and the source material (constituent elements) of the thin film crystal to be grown is placed in this cell, and the molecules are grown by heating. It is ejected as a line and deposited on a substrate maintained at an appropriate temperature to grow a single crystal thin film.

ところで、前記MBE法にて薄膜を形成すると、
その薄膜には薄厚の分布を生じ、セルの分子線噴
出口と真正面に対向する部分が最も厚くなり、そ
こから周辺に向うにつれて厚さは減少する。
By the way, when a thin film is formed using the MBE method,
The thin film has a thin thickness distribution, being thickest at the part directly facing the molecular beam ejection port of the cell, and decreasing from there toward the periphery.

従来はこの分布を小さくして、均一性の高い結
晶薄膜を成長させるためには、専ら、基板上に強
度分布の少ない均一な分子線を投射する方策がと
られて来た。例えば (イ) 基板と分子線源用セルとの間の距離を大にす
る。
Conventionally, in order to reduce this distribution and grow a highly uniform crystal thin film, measures have been taken exclusively to project a uniform molecular beam with a small intensity distribution onto a substrate. For example, (a) increasing the distance between the substrate and the molecular beam source cell;

(ロ) 第1図に見られるように、分子線源用セル
1′に於ける分子線噴出口1′aを細長くし傾斜
させて多数設ける。
(b) As shown in FIG. 1, a large number of molecular beam ejection ports 1'a in the molecular beam source cell 1' are elongated and inclined.

(ハ) 第2,3図に見られるように、セル1′内に
於いて、分子線噴出口1′aの近傍に分子線散
乱体5を設置する。
(c) As seen in FIGS. 2 and 3, a molecular beam scatterer 5 is installed in the cell 1' near the molecular beam outlet 1'a.

などの方法が採用されている。但しこれらの図に
て、2はヒーター、4は熱電対である。
methods have been adopted. However, in these figures, 2 is a heater and 4 is a thermocouple.

しかし、これらの方法でえられる膜厚分布の均
一性は、現在最もよく使われている2インチ径の
GaAs基板上に於て、高さ±5%であつて、必ず
しも充分とは言えない。本発明の分子線源用セル
は窮極的には、これの改善を目的とするものであ
る。
However, the uniformity of the film thickness distribution obtained by these methods cannot be achieved with the currently most commonly used 2-inch diameter film.
On a GaAs substrate, the height is ±5%, which is not necessarily sufficient. The ultimate objective of the molecular beam source cell of the present invention is to improve this.

本願の発明者は、均一な膜厚分布を得るため従
来とは異なる方策を採つた。それを第4図で説明
する。
The inventor of the present application took a different measure from the conventional method in order to obtain a uniform film thickness distribution. This will be explained with reference to FIG.

従来は、基板中心8Cを通る軸8aの回りに回
転する基板8の該中心8Cに向けてセル1から分
子線を噴出させるような構成がとられているが、
このセルを1aの位置に移し分子線を基板中心8
Cから逸らせて、わざと図の9の位置に向けて噴
出させたのである。この場合に、1a―8C間の
距離、噴出角θ及びl/rに対し8C―9間の距離 を適当に選ぶときは、例えば4インチ径の基板8
に対しても±1%以内の膜厚の均一性を確保でき
ることを見出した。
Conventionally, a configuration has been adopted in which a molecular beam is ejected from the cell 1 toward the center 8C of the substrate 8 rotating around an axis 8a passing through the center 8C of the substrate.
Move this cell to position 1a and direct the molecular beam to the center of the substrate at 8
He purposely made it deviate from C and eject toward position 9 in the diagram. In this case, when appropriately selecting the distance between 8C and 9 with respect to the distance between 1a and 8C, the ejection angle θ, and l/r, for example, the 4-inch diameter substrate 8
It has been found that uniformity of the film thickness within ±1% can be ensured even with respect to the film thickness.

ただし、上述で、lはセルの入口Aからソース
物質の液面の中央(ソース物質が昇華性のとき
は、上面の中央)までの距離、2rはセルの内径
である。
However, in the above, l is the distance from the inlet A of the cell to the center of the liquid surface of the source material (or the center of the upper surface when the source material is sublimable), and 2r is the inner diameter of the cell.

この場合には分子線投射密度は、所謂余弦則で
近似されることが知られている。余弦則とは、第
5図にてセルの中心Aから、セルの軸線Fと角θ
をなす方向にてRの距離にある点Pで、単位時間
単位面積上にうる膜厚Tは次の(1)式の如くになる
というものである。
In this case, it is known that the molecular beam projection density is approximated by the so-called cosine law. The cosine law refers to the angle θ between the cell center A and the cell axis F in Figure 5.
At a point P located at a distance R in the direction of , the film thickness T that can be obtained on a unit area per unit time is expressed by the following equation (1).

T=K 1/R2cosnθ ………(1) ただしKは比例常数。nはl/rによつて変る
値で、例えばl/r=0のときn≒1、l/r=
2のときn≒4、l/r=4のときn≒7、l/
r=10のときn≒10である。(バリアン社説明資
料VR―152(Reprinted from ELECTRONICS
magajine、August、1980) 従つて本願の発明者は「均一な投射」をめざす
前述の(イ)、(ロ)、(ハ)の分子線投射とは明らかに異な
り、余弦則に従う不均一な投射をそのまゝ利用し
て高度の膜厚均一性を実現したものである。この
場合は次のことが問題になる。
T=K 1/R 2 cosnθ ………(1) where K is a proportionality constant. n is a value that changes depending on l/r, for example, when l/r=0, n≒1, l/r=
2, n≒4, l/r=4, n≒7, l/
When r=10, n≈10. (Varian company explanatory material VR-152 (Reprinted from ELECTRONICS
(Magajine, August, 1980) Therefore, the inventor of the present application is clearly different from the above-mentioned molecular beam projections (a), (b), and (c), which aim for "uniform projection," and aims at nonuniform projection according to the cosine law. A high degree of film thickness uniformity was achieved by utilizing the film as is. In this case, the following issues arise:

MBE法では、極めて高い真空度が要求され、
このためMBE装置では長時間に亘るガス抜きが
行はれ、その間にはセル内のソース物質は可成り
の量が蒸発する。またいつたん稼働状態に入つた
MBE装置は、その稼働率を上げるため、努めて
長時間稼働させようとするので、その間のセル内
のソース物質の蒸発量も多大であり、前述のl/
r従つてnの値は、はじめと終りでは大きく変化
する。
The MBE method requires an extremely high degree of vacuum,
For this reason, in the MBE device, degassing is performed for a long time, during which time a considerable amount of the source material in the cell evaporates. It's finally back up and running again
MBE equipment strives to operate for a long time in order to increase its operating rate, so the amount of evaporation of the source material in the cell during that time is also large, and the above-mentioned l/l/
The value of r and therefore n changes greatly from the beginning to the end.

nの値が大きく変るときは、分子線投射のパタ
ーンが変化し、このため前記した第4図のセル1
aによつて得る基板8上の膜厚分布の均一性も悪
化する可能性を生じる。
When the value of n changes greatly, the pattern of molecular beam projection changes, so that cell 1 in Figure 4 mentioned above changes.
There is a possibility that the uniformity of the film thickness distribution on the substrate 8 obtained by a is also deteriorated.

本願の発明は、この問題の解決を目的とする。 The invention of the present application aims to solve this problem.

また、セルを第4図の1aの位置に置くか否か
に関係なく、一般にMBE装置では基板上又はセ
ル内に塵埃の形で不純物粒子の落下することを極
端に嫌う。そのため例えば第4図の基板8とセル
1の互の関係位置保ちつゝ、この全体を地軸に対
し45゜傾ける等の形で装置を構築することが多い。
このときはセルの軸線は地軸に対し大きく傾斜す
るのでソース物質の液面はセルの軸線Fに対し甚
だしく傾くことになる。
Furthermore, regardless of whether the cell is placed in the position 1a in FIG. 4, in general, MBE apparatuses extremely dislike impurity particles falling onto the substrate or into the cell in the form of dust. Therefore, for example, the device is often constructed in such a way that the substrate 8 and the cell 1 shown in FIG. 4 are kept in their relative positions, but the entire structure is tilted at an angle of 45 degrees with respect to the earth's axis.
At this time, the axis of the cell is greatly tilted with respect to the earth's axis, so the liquid level of the source material is significantly tilted with respect to the axis F of the cell.

液面が傾く場合には、殊にセルが大口径で液面
が入口Aに近接しているときは、分子線投射のパ
ターンは軸線に対し非対象形となり、これを(1)式
で近似できなくなるが、そのパターン形状は液面
の低下によつて激変する。分子線投射パターンの
変化がMBE装置を非常に扱い難いものとするこ
とは明らかであり、変化は可及的に阻止したい。
When the liquid level is tilted, especially when the cell has a large diameter and the liquid level is close to the inlet A, the molecular beam projection pattern becomes asymmetrical with respect to the axis, and this can be approximated by equation (1). However, the shape of the pattern changes dramatically as the liquid level drops. It is clear that changes in the molecular beam projection pattern make the MBE system extremely difficult to use, and we want to prevent this change as much as possible.

本発明はこの問題の解決を目的とする。 The present invention aims to solve this problem.

第6図aに本発明の分子線源用セルの実施例を
示す。
FIG. 6a shows an embodiment of the molecular beam source cell of the present invention.

10はセル外套管、11はセル本体で共に
PBN(パイロリテイツク・ボロン・ナイトライ
ド)(熱分解窒化硼素)で作られている。10,
11の両者がセルを構成する。前者は固定され、
後者はそれに内挿されて上下動する。後者にはソ
ース物質12が投入され、高温で液状となつて蒸
発するか昇華して蒸気となる。13はその液面
(若くは昇華の場合は固体の最上面)である。
10 is the cell mantle, 11 is the cell body.
Made from PBN (pyrolytic boron nitride). 10,
11 constitute a cell. The former is fixed;
The latter is interpolated into it and moves up and down. A source material 12 is introduced into the latter, becomes liquid at a high temperature, and evaporates or sublimates to become vapor. 13 is the liquid level (in the case of sublimation, the top surface of the solid).

14はセルを囲むスパイラル状のヒーター、1
5,16はリフレクター、17はヒーター線導出
用の絶縁碍子18はPBNで作られた案内環、2
0は熱電対、21は熱電対用絶縁碍子管でセル本
体11を上下させる駆動桿を兼用するもの、22
は碍管21の駆動架で碍管21の突起21aに上
端を係止し下端をベローズ40の遊端41に固定
するもの、30は真空容器壁、31はフランジで
ベローズ40はこれに固定されている。32は真
空用シール材、33はフランジ31に取付けられ
た雄ネジ、34はそれに螺合する雌ネジ。雌ネジ
34を回すとベローズ40は伸縮し、駆動架22
碍管21を経由してセル本体11が上下動する。
42は熱電対20のリード線である。
14 is a spiral heater surrounding the cell; 1
5 and 16 are reflectors, 17 is an insulator for leading out heater wires 18 is a guide ring made of PBN, 2
0 is a thermocouple, 21 is an insulator tube for the thermocouple which also serves as a drive rod for moving the cell body 11 up and down, 22
3 is a drive rack for the insulator tube 21, the upper end of which is locked to the protrusion 21a of the insulator tube 21, and the lower end is fixed to the free end 41 of the bellows 40; 30 is the wall of the vacuum container; 31 is a flange to which the bellows 40 is fixed. . 32 is a vacuum sealing material, 33 is a male screw attached to the flange 31, and 34 is a female screw to be screwed therein. When the female screw 34 is turned, the bellows 40 expands and contracts, and the drive rack 22
The cell body 11 moves up and down via the insulator tube 21.
42 is a lead wire of the thermocouple 20.

本発明の分子線源用セル10,11にあつて
は、ソース物質12はセル本体11の内部に投入
され、蒸発の進行につれてその最上面13はセル
本体11の内部で下降してゆくが、その下降分は
雌ネジ34を回してセル本体11をセル外套管1
0の中へ押し上げてゆくことによつて補償し、セ
ルの入口Aからソース物質の液面までの距離lを
常に一定に保つことができるようになつている。
その状況を第6図b,cに示す。上記の補償操作
は前もつて加熱時間と加熱温度に対する物質の最
上面の減り具合を調べておき行なう。
In the molecular beam source cells 10 and 11 of the present invention, the source material 12 is introduced into the cell body 11, and as evaporation progresses, the uppermost surface 13 thereof descends inside the cell body 11. For the downward movement, turn the female screw 34 to connect the cell body 11 to the cell mantle tube 1.
The distance l from the cell inlet A to the liquid level of the source substance can be kept constant at all times.
The situation is shown in Figures 6b and 6c. The above-mentioned compensation operation is performed by checking in advance the extent to which the top surface of the material decreases with respect to heating time and heating temperature.

このセル10,11によつて前記した各技術課
題が解決を見ることは明らかで説明を要しない。
It is obvious that each of the technical problems described above can be solved by the cells 10 and 11, and no explanation is required.

なお、本発明のセル外套管10、セル本体11
の形状構成はこの実施例に拘束されない。殊に補
償駆動の方法には広範囲の応用変形が可能であ
る。セル外套管10に相当する管状体をソース物
質収納容器であるセル本体11の内部に挿入して
ゆく構成も可能であり、また、セル本体の方を固
定してもよい。要はセルを互いに挿入関係にあり
且その挿入深さを調整できる管状体とソース物質
収納容器にすればよく本発明のセルはこの発明の
主旨を尊重しつゝ、その形状構成を様々に変更す
ることができる。セルの材質もまたPBN以外の
ものが自由に選定できる。
In addition, the cell jacket tube 10 and the cell main body 11 of the present invention
The shape and configuration of is not restricted to this embodiment. In particular, a wide range of application variations are possible in the method of compensation drive. A configuration in which a tubular body corresponding to the cell jacket tube 10 is inserted into the cell body 11, which is a source material storage container, is also possible, or the cell body may be fixed. In short, the cell of the present invention can be modified in various shapes and configurations while respecting the gist of the invention as long as the cells are inserted into each other and the tubular body and the source material storage container are capable of adjusting the insertion depth. can do. Cell materials other than PBN can also be freely selected.

本発明の分子線源用セルは上述のとおりである
ため、分子線放射のパターンを一定にし、再現性
ある。MBE膜、膜厚の均一性にすぐれたMBE膜
を生成する上で著効がある。本発明が高性能半導
体装置の製造に寄与するところ極めて大きく、工
業上有為の発明ということができる。
Since the molecular beam source cell of the present invention is as described above, the pattern of molecular beam radiation is constant and reproducible. MBE film: It is extremely effective in producing an MBE film with excellent film thickness uniformity. The present invention greatly contributes to the production of high-performance semiconductor devices, and can be said to be an industrially useful invention.

【図面の簡単な説明】[Brief explanation of drawings]

第1,2,3図は従来の分子線源用セルの図。
第4図は膜厚分布の均一性の高いMBE膜を作る
方法を説明する図。第5図はそのセルの分子線放
射の図。第6図a,b,cは本発明のセルの実施
例の図。 10:セル外套管(管状体)、11:セル本体
(ソース物質収納容器)。
Figures 1, 2, and 3 are diagrams of conventional molecular beam source cells.
Figure 4 is a diagram illustrating a method for producing an MBE film with highly uniform film thickness distribution. Figure 5 is a diagram of the molecular beam radiation of the cell. Figures 6a, b, and c are diagrams of embodiments of the cell of the present invention. 10: Cell mantle (tubular body), 11: Cell body (source material storage container).

Claims (1)

【特許請求の範囲】[Claims] 1 分子線源用セルに於て、セルを、両者ともほ
ぼ同等に加熱され且互いに挿入関係にあり且その
挿入深さを調整することのできる、管状体とソー
ス物質収納容器の二者で構成したことを特徴とす
る分子線源用セル。
1. In a cell for a molecular beam source, the cell is composed of a tubular body and a source substance storage container, both of which are heated almost equally, are inserted into each other, and whose insertion depth can be adjusted. A molecular beam source cell characterized by:
JP58172799A 1983-09-17 1983-09-17 Cell for molecular beam source Granted JPS6063918A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58172799A JPS6063918A (en) 1983-09-17 1983-09-17 Cell for molecular beam source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58172799A JPS6063918A (en) 1983-09-17 1983-09-17 Cell for molecular beam source

Publications (2)

Publication Number Publication Date
JPS6063918A JPS6063918A (en) 1985-04-12
JPH0136977B2 true JPH0136977B2 (en) 1989-08-03

Family

ID=15948578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58172799A Granted JPS6063918A (en) 1983-09-17 1983-09-17 Cell for molecular beam source

Country Status (1)

Country Link
JP (1) JPS6063918A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4875565B2 (en) * 2007-08-06 2012-02-15 長州産業株式会社 Cap for crucible of molecular beam source cell

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5752565U (en) * 1980-09-12 1982-03-26
JPS5795233U (en) * 1980-12-01 1982-06-11
US4608310A (en) * 1983-06-20 1986-08-26 Eastman Kodak Company Polycarbonate, latex compositions comprising such
JPS6027118A (en) * 1983-07-25 1985-02-12 Mitsubishi Electric Corp Film growing device with molecular beam

Also Published As

Publication number Publication date
JPS6063918A (en) 1985-04-12

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