JPH0139622B2 - - Google Patents
Info
- Publication number
- JPH0139622B2 JPH0139622B2 JP54113990A JP11399079A JPH0139622B2 JP H0139622 B2 JPH0139622 B2 JP H0139622B2 JP 54113990 A JP54113990 A JP 54113990A JP 11399079 A JP11399079 A JP 11399079A JP H0139622 B2 JPH0139622 B2 JP H0139622B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- target
- electrode plate
- image pickup
- electrostatic deflection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/48—Electron guns
- H01J29/488—Schematic arrangements of the electrodes for beam forming; Place and form of the elecrodes
Landscapes
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Description
【発明の詳細な説明】
本発明は撮像管、特に電磁集束−静電偏向型電
子光学系を用いた撮像管に係わる。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an image pickup tube, and particularly to an image pickup tube using an electromagnetic focusing/electrostatic deflection type electron optical system.
電磁集束−静電偏向型電子光学系を用いた撮像
管(以下MF型撮像管と略称する)は、原理的に
は集束収差が無いこと、偏向直線性が良好なこ
と、電子ビームの垂直ランデイングが得られるな
どの利点を有し、これがため、この種MF型撮像
管は賞用されるに到つている。ところが、この種
MF型撮像管においても、通常戻りビーム像と呼
ばれる偽信号の発生がある。この戻りビーム像に
ついて説明するに、先ず通常のMF型撮像管につ
いて説明する。この撮像管は第1図に示すよう
に、管体1内に電子銃2が配置され、これよりの
電子ビームに対する水平・垂直偏向用の静電偏向
電極5が、例えば管体1の内周面に被着された導
電膜によつて構成される。6は集束コイル、7は
整列コイルを示す。電子銃2は例えば第2図に示
すように、カソードKと、第1グリツド電極G1
と、第2グリツド電極G2とを有し、第2グリツ
ド電極G2にはリミツテイングアパーチヤaを有
する電極板8が管軸とほぼ直交する面内に設けら
れて成る。 Image pickup tubes using an electromagnetic focusing-electrostatic deflection type electron optical system (hereinafter referred to as MF type image pickup tubes) have, in principle, no focusing aberration, good deflection linearity, and vertical landing of the electron beam. This type of MF type image pickup tube has come to be widely used for this reason. However, this species
Even in MF type image pickup tubes, a false signal called a return beam image usually occurs. To explain this returned beam image, first, a normal MF type image pickup tube will be explained. As shown in FIG. 1, in this image pickup tube, an electron gun 2 is disposed within a tube body 1, and an electrostatic deflection electrode 5 for horizontal and vertical deflection of the electron beam from the electron gun 2 is provided on the inner circumference of the tube body 1, for example. It consists of a conductive film deposited on the surface. 6 indicates a focusing coil, and 7 indicates an alignment coil. For example, as shown in FIG. 2, the electron gun 2 has a cathode K and a first grid electrode G1.
and a second grid electrode G2 , and the second grid electrode G2 is provided with an electrode plate 8 having a limiting aperture a in a plane substantially perpendicular to the tube axis.
このような構成による撮像管において電子銃2
より発射された電子ビーム9は静電偏向電極5に
よつて形成される電界によつて水平・垂直偏向さ
れて管体1のフエースプレート3の内面に配され
たターゲツト4上を走査するようになされる。こ
のターゲツト4における電子ビームの走査領域
は、第2図において、領域Aで示す範囲とすると
きこの領域Aより外側の領域Bにおいて偽信号が
生ずる。すなわち、電子銃2より発射されたいわ
ゆる往き電子ビーム9は、ターゲツト4の領域A
上を走査するものであるがその一部の電子は破線
10で示すように電子銃2側に押し戻され、これ
がいわゆる戻りビームとなる。そして、この戻り
ビーム10が、第2グリツド電極G2の主として
電極板8に当り、その一部が再び破線11で示す
ようにターゲツト4に向う。このビーム11はそ
のエネルギーが小さく、一方ターゲツト4におけ
るビームの走査領域Aにおいてはビーム9の走査
による放電によつて陰極電位の0Vに近く保持さ
れているので、この領域Aにはビーム11の入射
がなされないが、走査領域A外の領域Bにおいて
はビーム9の走査がなされていないことによつて
ターゲツト印加電圧に近い高いポテンシンヤルの
数十V程度の電位状態にあるために、ここにビー
ム10が入射し、これが偽信号として読み出さ
れ、いわゆる戻りビーム像となる。22はターゲ
ツト4に対向して配置されるメツシユ電極を示
す。 In the image pickup tube with such a configuration, the electron gun 2
The emitted electron beam 9 is horizontally and vertically deflected by the electric field formed by the electrostatic deflection electrode 5 so as to scan the target 4 disposed on the inner surface of the face plate 3 of the tube body 1. It will be done. When the scanning area of the electron beam on the target 4 is shown as area A in FIG. 2, false signals occur in area B outside area A. That is, the so-called forward electron beam 9 emitted from the electron gun 2 hits the area A of the target 4.
Some of the electrons are pushed back toward the electron gun 2 as shown by the broken line 10, and this becomes a so-called return beam. Then, this return beam 10 mainly hits the electrode plate 8 of the second grid electrode G 2 , and a part of it again heads toward the target 4 as shown by the broken line 11 . The energy of this beam 11 is small, and on the other hand, in the beam scanning area A of the target 4, the cathode potential is maintained close to 0V due to the discharge caused by the scanning of the beam 9. However, since the beam 9 is not scanned in the region B outside the scanning region A, the potential of the beam 9 is at a high potential of several tens of volts, which is close to the target applied voltage. enters the beam, and this is read out as a false signal, resulting in a so-called return beam image. Reference numeral 22 indicates a mesh electrode placed opposite the target 4.
本発明は、特にMF型撮像管において、上述し
た戻りビームによる偽信号の発生を効果的に回避
することができるようにする。 The present invention makes it possible to effectively avoid the generation of false signals due to the above-mentioned return beam, especially in MF type image pickup tubes.
すなわち本発明においては、MF型撮像管にお
いて往き戻り各ビームの偏向感度、すなわち第2
図に示す往きビーム9と、戻りビーム10と、更
にこの戻りビーム10によるターゲツト4に向う
ビーム11の各偏向感度が基本的には等しいこと
に着目し、戻りビーム10が電子銃2のターゲツ
ト4と対向するように配置された電極板部、第2
図の例では第2グリツド電極G2の円筒部の後端
に、これを閉塞するように設けられたリミツテイ
ングアパーチヤ電極板8に当つてターゲツト4
の、特に領域A以外の領域Bに戻されるのは、領
域Aの幅をWtとするとき、電極板8の幅が2/3
Wt以上のところで戻りビーム10が当ることに
よつて生ずることを確認し、これに基いて電極板
8の配置位置の2/3Wt以上の位置に向う戻りビー
ム10をターゲツト4の少くとも領域B以外に向
わしめるようにする。 That is, in the present invention, the deflection sensitivity of each returning beam in the MF type image pickup tube, that is, the second
Focusing on the fact that the deflection sensitivities of the forward beam 9 shown in the figure, the return beam 10, and the beam 11 directed toward the target 4 by the return beam 10 are basically equal, it is assumed that the return beam 10 is a second electrode plate portion disposed to face the second electrode plate portion;
In the example shown in the figure, the target 4 hits the limiting aperture electrode plate 8 provided at the rear end of the cylindrical part of the second grid electrode G2 so as to close it.
In particular, what is returned to area B other than area A is when the width of electrode plate 8 is 2/3 when the width of area A is Wt.
It is confirmed that this is caused by the return beam 10 hitting a point above Wt, and based on this, the return beam 10 is directed toward a position above 2/3 Wt of the position where the electrode plate 8 is arranged, at least in areas other than area B of the target 4. to encourage people to
第3図を参照して本発明の一例を説明するに、
第3図において第2図と対応する部分には同一符
号を付して重複説明を省略する。この例において
は、電子銃2を構成し、ターゲツト4と対向する
ように配置された電極板部、図示の例では第2の
グリツド電極G2の電極板8の後段に、例えば長
さlが0.05L〜0.4L(但しLはアパーチヤaとター
ゲツト4との間の距離)を有し、外径が2/3Wt以
下の円筒状の補助電極13を設ける。そしてこの
補助電極13は、例えばグリツド電極G2、した
がつてそのアパーチヤ電極板8と電気的に連結し
てその外側に配置された静電偏向電極5に与えら
れる電圧の平均電圧の例えば400Vより低い例え
ば300Vの電圧を与えて、補助電極13と静電偏
向電極5との間に静電偏向電界を形成し、戻りビ
ームのうち特にターゲツト4の領域Bに向うビー
ム10を生じさせる方向に戻る戻りビーム9を外
側へ偏向させ電極G2の電極板8より遠去けるよ
うにする。尚、ここに補助電極13の長さlは、
これが短かすぎると戻りビームに充分な偏向を与
えることができず、長すぎると静電偏向電極5に
よる本来の偏向を阻害することになる。この長さ
lは、電極13に第2グリツド電極G2及びその
リミツテイングアパーチヤ電極板8に通常与えら
れる電圧を与えるものとし、一方静電偏向電極5
の平均電圧も通常与えられる電圧として、これら
によつて両者間に生ずる電界によつて戻りビーム
を偏向させるとすると、0.05Ll0.4Lに選ば
れることが望ましいことがわかつた。 An example of the present invention will be described with reference to FIG.
In FIG. 3, parts corresponding to those in FIG. 2 are designated by the same reference numerals, and redundant explanation will be omitted. In this example, an electrode plate part that constitutes the electron gun 2 and is arranged to face the target 4, in the illustrated example, the rear part of the electrode plate 8 of the second grid electrode G2 has a length l, for example. A cylindrical auxiliary electrode 13 having a diameter of 0.05L to 0.4L (where L is the distance between the aperture a and the target 4) and an outer diameter of 2/3 Wt or less is provided. The auxiliary electrode 13 is, for example, 400 V higher than the average voltage applied to the grid electrode G 2 and therefore to the electrostatic deflection electrode 5 which is electrically connected to and arranged outside the aperture electrode plate 8. A low voltage of, for example, 300 V is applied to form an electrostatic deflection electric field between the auxiliary electrode 13 and the electrostatic deflection electrode 5, and the return beam is returned in a direction that produces a beam 10 which is particularly directed towards the region B of the target 4. The return beam 9 is deflected outward so that it travels further away from the electrode plate 8 of electrode G2 . Here, the length l of the auxiliary electrode 13 is:
If this is too short, sufficient deflection cannot be given to the returning beam, and if it is too long, the original deflection by the electrostatic deflection electrode 5 will be inhibited. This length l shall provide the electrode 13 with the voltage normally applied to the second grid electrode G 2 and its limiting aperture electrode plate 8, while the electrostatic deflection electrode 5
It has been found that it is desirable to select the average voltage of 0.05Ll0.4L, assuming that the return beam is deflected by the electric field generated between the two, assuming that the average voltage is also a normally given voltage.
第4図の例においては補助電極13を設けて往
きビームと戻りビームに関して偏向感度を異なら
しめるようにすると共に、集束コイル6をターゲ
ツト4側に偏つて配置した場合である。この場
合、集束コイル6の長さlcは、これが長すぎる
と、戻りビームに充分な偏向を与えることができ
ず、短かすぎると本来の集束作用が不充分となる
ものでありこの長さlcは0.05L≦lc<1.0Lに選ば
れることが望ましいことがわかつた。 In the example shown in FIG. 4, an auxiliary electrode 13 is provided to make the deflection sensitivity different for the forward beam and the return beam, and the focusing coil 6 is placed biased toward the target 4 side. In this case, the length lc of the focusing coil 6 is such that if it is too long, it will not be able to give sufficient deflection to the returning beam, and if it is too short, the original focusing effect will be insufficient. It was found that it is desirable to select 0.05L≦lc<1.0L.
尚、lc=0.8Lとするとき往きビームに対する偏
向感度と戻りビームの偏向感度とは1:1.4とな
る。 Note that when lc=0.8L, the deflection sensitivity for the forward beam and the deflection sensitivity for the return beam are 1:1.4.
尚、第3図及び第4図中12は電極板8の周辺
部に設けられた戻りビーム10の吸収ないしは散
乱に供する物質層で、電極板8の周辺部に戻りビ
ームが衝撃して再びターゲツト4に向うことを阻
止させるものである。 In FIGS. 3 and 4, reference numeral 12 denotes a material layer provided around the electrode plate 8 for absorbing or scattering the return beam 10, so that the return beam impacts the periphery of the electrode plate 8 and returns to the target. This will prevent you from moving towards 4.
また、各図示の例では電極G2のリミツテイン
グアパーチヤを有する電極板8の外径が電極G2
の円筒状部の径より大になされた場合を示したが
電極G2の円筒状部の径と同径を有する構造とす
ることもできる。また、電子銃2の構成も種々の
構成をとり得るものであり、ターゲツト4と対向
する電極板はリミツテイングアパーチヤを有する
電極板に限られるものではないことは付言を要さ
ないところであろう。 In addition, in each illustrated example, the outer diameter of the electrode plate 8 having the limiting aperture of the electrode G 2 is
Although the case is shown in which the diameter is larger than the diameter of the cylindrical portion of the electrode G2 , it is also possible to have a structure having the same diameter as the diameter of the cylindrical portion of the electrode G2. Further, the configuration of the electron gun 2 can take various configurations, and it is needless to say that the electrode plate facing the target 4 is not limited to an electrode plate having a limiting aperture. Dew.
第1図は本発明の説明に供する電磁集束−静電
偏向型撮像管の側面図、第2図はその要部の構成
図、第3図及び第4図は夫々本発明による撮像管
の各例の要部の構成図である。
1は管体、2は電子銃、3はフエースプレー
ト、4はターゲツト、5は静電偏向電極、6は集
束コイル、G1及びG2は第1及び第2グリツド、
8はリミツテイングアパーチヤ電極板、12は電
子の吸収ないしは散乱層、13は補助電極であ
る。
FIG. 1 is a side view of an electromagnetic focusing/electrostatic deflection type image pickup tube used for explaining the present invention, FIG. 2 is a configuration diagram of its main parts, and FIGS. 3 and 4 are each of the image pickup tube according to the present invention. It is a block diagram of the main part of an example. 1 is a tube body, 2 is an electron gun, 3 is a face plate, 4 is a target, 5 is an electrostatic deflection electrode, 6 is a focusing coil, G 1 and G 2 are first and second grids,
8 is a limiting aperture electrode plate, 12 is an electron absorption or scattering layer, and 13 is an auxiliary electrode.
Claims (1)
ーゲツトと対向する電極板部の後段に筒状の補助
電極を有し、静電偏向電極との間に静電偏向電界
を形成して前記電極板部の前記ターゲツトの電子
ビーム走査領域の幅の2/3以上の位置に向かうタ
ーゲツトよりの戻りビームが再びターゲツトに向
わないようした撮像管。1. Electromagnetic focusing - The electron gun of an electrostatic deflection type image pickup tube has a cylindrical auxiliary electrode at the rear stage of the electrode plate portion facing the target, and forms an electrostatic deflection electric field between it and the electrostatic deflection electrode. The image pickup tube is configured such that a return beam from the target directed to a position of 2/3 or more of the width of the electron beam scanning area of the target on the electrode plate portion does not return to the target again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11399079A JPS5638742A (en) | 1979-09-05 | 1979-09-05 | Camera tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11399079A JPS5638742A (en) | 1979-09-05 | 1979-09-05 | Camera tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5638742A JPS5638742A (en) | 1981-04-14 |
| JPH0139622B2 true JPH0139622B2 (en) | 1989-08-22 |
Family
ID=14626290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11399079A Granted JPS5638742A (en) | 1979-09-05 | 1979-09-05 | Camera tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5638742A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5973838A (en) * | 1982-10-20 | 1984-04-26 | Matsushita Electric Ind Co Ltd | Electromagnetic focus and electrostatic deflection-type camera tube |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4728408U (en) * | 1971-04-19 | 1972-12-01 |
-
1979
- 1979-09-05 JP JP11399079A patent/JPS5638742A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5638742A (en) | 1981-04-14 |
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