JPH021529B2 - - Google Patents
Info
- Publication number
- JPH021529B2 JPH021529B2 JP57024711A JP2471182A JPH021529B2 JP H021529 B2 JPH021529 B2 JP H021529B2 JP 57024711 A JP57024711 A JP 57024711A JP 2471182 A JP2471182 A JP 2471182A JP H021529 B2 JPH021529 B2 JP H021529B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- vapor deposition
- film
- producing
- conductive thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920000642 polymer Polymers 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 239000004760 aramid Substances 0.000 claims description 5
- 229920003235 aromatic polyamide Polymers 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000004962 Polyamide-imide Substances 0.000 claims description 2
- 239000004693 Polybenzimidazole Substances 0.000 claims description 2
- 229920002312 polyamide-imide Polymers 0.000 claims description 2
- 229920002480 polybenzimidazole Polymers 0.000 claims description 2
- 229920006149 polyester-amide block copolymer Polymers 0.000 claims description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 claims 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 claims 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 claims 1
- 238000006482 condensation reaction Methods 0.000 claims 1
- 229940018564 m-phenylenediamine Drugs 0.000 claims 1
- 239000010408 film Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005979 thermal decomposition reaction Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 101100010166 Mus musculus Dok3 gene Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Physical Vapour Deposition (AREA)
Description
本発明は新規な電導性材料の薄膜の製造方法に
関する。
元来電気的に絶縁性である有機高分子に電導性
を付与し、無機物の金属、半導体、酸化物では実
現し得ないユニークな性質を出現させようという
試みが最近活発に行なわれている。その試みの中
で一つの重要な方法に熱分解高分子の形成があ
る。これはある特殊な材料から出発して、熱分解
により重縮合した化合物を得ようというものであ
る。その生成物は主に炭素質であるが、出発原料
によりその電導度が制御されるところに特徴があ
る。熱分解高分子の歴史は古く、1960年代前半に
注目を集めた材料である。例えばロシア学派によ
るポリアクリロニトリルの熱分解が知られてお
り、約2Scm-1の電導度が得られている。(A、V、
Airapetjanc 氏等 Dokl、Akad、Nauk
SSSR誌、148巻、605頁、1963年)。また、1964
年にはIBM社のS、D、Bruck氏はポリイミド
(デユポン社のカプトンHフイルム)を800℃で熱
分解し、20Scm-1の電導度を有する電導体が得ら
れることを発見した。ポリイミドフイルムの電導
度は常温で10-18Scm-1であり、熱分解により1020
に及ぶ電導度変化が生じている訳であるので、こ
の方法は有機高分子材料に電導度を付与するには
非常に秀れた方法であると言つてよい。このよう
に熱分解によつて高い電導性が得られる材料の種
類は限られているが、縮合系高分子のいくつかが
同様に熱分解により高電導性となり得ることが発
見されている。その高分子は最近の高分子化学の
進歩から生まれた耐熱性高分子に属するもので、
例えば芳香族ポリアミド、ポリアミドイミド、ポ
リエステルアミド、ポリベンズイミダゾール、ポ
リオキサジアゾール、ポリチアジアゾールあるい
はポリベンズチアゾールなどである。これらの材
料は真空中あるいは不活性気流中で400〜1000℃
の温度で熱分解されると、最高500Scm-1の電導度
を与える。これらの発見に基づき、新規導電材料
の製造方法及びこれらの粉末と高分子バインダー
から成る導電性組成物に関する提案がなされてい
る。熱分解高分子の特徴は高電導性と熱的、化学
的安定性であるため、抵抗、導体用の導電性皮膜
の他に、ヒータ、アクチユエータを兼ねた温度、
圧力、歪、風速などのセンサー、耐熱化、腐蝕性
電極、太陽熱コレクタ用吸収膜など非常に多くの
分野での応用が考えられる。しかしながら、この
ような多様な応用を具体化するためには、上記熱
分解高分子の皮膜を目的に合わせて製造してやる
必要がある。従つて本発明の目的とするところは
熱分解によつて電導性の付与された耐熱性高分子
の薄膜の製造方法を提供するものである。薄膜の
製法には、物理蒸着(Phisical Vaper
Deposition、PVDと略す)と、化学蒸着
(Chemical Vaper Deposition、CVDと略す)の
2つがあるが、物理蒸着には以下の様な欠点があ
る。
量産性が低い。
大面積の薄膜が得にくい。
特殊な装置を必要とする。
よつて、化学蒸着が可能になれば、この欠点が解
消される。本発明は、ある特殊の高分子材料の化
学蒸着が可能である事を見い出したことに基くも
のである。
従来アセチレン、ベンゼンなどの炭化水素を真
空中で物理蒸着した例は多い。例えば分光的な純
粋のグラフアイト(20ppm)は1×10-5torrの真
空中で蒸着されていて、蒸着についてはD、E
Bradleyによつて発表されている。又これら蒸着
された皮膜の物性についても、G、K、
Bhaganat等によつて研究されている。つまり蒸
着したカーボンフイルムの光学的又、電気的な特
性について書かれており、皮膜の厚さが異なるも
のについての可視的な分野での吸収であるとか、
いろいろな温度での伝導性であるとか、皮膜の半
導体特性であるとか多種多様な研究が報告されて
いる。これらと比較すると本発明では特殊な原料
を用いるため電導度が高くなるという特徴があ
る。以下に実施例および用途を述べ、本発明の効
果を説明する。
実施例 1
石英管内を窒素空気で満たし、この中にポリイ
ミド(商品名 デユポン社、 カプトンH)と5
mm厚の石英板を置いて、700゜〜1200℃の範囲で温
度と薄膜の生成過程の関係を実験した。図におい
て1は耐熱性高分子で、この実施例ではデユポン
社のカプトンHを用いてある。2は加熱用ヒー
タ、3は石英管4内に配された厚さ5mmの基板、
5は石英管4内に窒素を送り込むためのボンベ、
6は窒素の排出口である。下表に温度と生成過程
の関係を示した。
The present invention relates to a novel method for manufacturing thin films of electrically conductive materials. Recently, many attempts have been made to impart electrical conductivity to organic polymers, which are originally electrically insulating, and to create unique properties that cannot be achieved with inorganic metals, semiconductors, and oxides. One important method in this effort is the formation of pyrolytic polymers. This is an attempt to obtain a polycondensed compound by thermal decomposition starting from a specific material. The product is mainly carbonaceous, but its electrical conductivity is controlled by the starting materials. Pyrolytic polymers have a long history and are a material that attracted attention in the early 1960s. For example, the thermal decomposition of polyacrylonitrile by the Russian school is known, and an electrical conductivity of about 2 Scm -1 has been obtained. (A, V,
Airapetjanc et al. Dokl, Akad, Nauk
SSSR Magazine, Volume 148, Page 605, 1963). Also in 1964
In 1999, Mr. S.D. Bruck of IBM Corporation discovered that polyimide (Kapton H film of DuPont) could be thermally decomposed at 800°C to produce an electrical conductor with a conductivity of 20 Scm -1 . The electrical conductivity of polyimide film is 10 -18 Scm -1 at room temperature, and it decreases to 10 20 Scm -1 by thermal decomposition.
Since the electrical conductivity changes over a range of 100 to 100%, this method can be said to be an excellent method for imparting electrical conductivity to organic polymeric materials. Although the types of materials that can be made highly conductive by thermal decomposition are limited, it has been discovered that some condensation polymers can also be made highly conductive by thermal decomposition. The polymer belongs to a class of heat-resistant polymers created from recent advances in polymer chemistry.
Examples include aromatic polyamide, polyamideimide, polyesteramide, polybenzimidazole, polyoxadiazole, polythiadiazole, and polybenzthiazole. These materials are heated at 400-1000℃ in vacuum or inert gas flow.
When pyrolyzed at temperatures of , it gives conductivities of up to 500 Scm -1 . Based on these discoveries, proposals have been made regarding methods for producing new conductive materials and conductive compositions comprising these powders and polymeric binders. Pyrolytic polymers are characterized by high conductivity and thermal and chemical stability, so in addition to conductive films for resistors and conductors, they can also be used as heaters and actuators.
Applications can be considered in a wide variety of fields, including sensors for pressure, strain, and wind speed, heat resistance, corrosive electrodes, and absorption films for solar heat collectors. However, in order to realize such various applications, it is necessary to manufacture the above-mentioned pyrolytic polymer film according to the purpose. SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method for producing a thin film of a heat-resistant polymer imparted with electrical conductivity by thermal decomposition. The thin film manufacturing method uses physical vapor deposition (Physical Vapor Deposition).
There are two methods: physical vapor deposition (abbreviated as PVD) and chemical vapor deposition (abbreviated as CVD), but physical vapor deposition has the following drawbacks. Mass production is low. It is difficult to obtain a thin film with a large area. Requires special equipment. Therefore, if chemical vapor deposition becomes possible, this drawback will be overcome. The present invention is based on the discovery that chemical vapor deposition of certain special polymeric materials is possible. Conventionally, there are many examples of hydrocarbons such as acetylene and benzene being physically vapor deposited in a vacuum. For example, spectrally pure graphite (20 ppm) is deposited in a vacuum of 1 × 10 -5 torr, and the deposition is D, E
Published by Bradley. Regarding the physical properties of these deposited films, G, K,
It has been studied by Bhaganat et al. In other words, it is written about the optical and electrical properties of vapor-deposited carbon films, and the absorption in the visible field of films with different thicknesses.
A wide variety of studies have been reported, such as the conductivity at various temperatures and the semiconductor properties of films. Compared to these, the present invention is characterized in that it uses a special raw material and therefore has a higher electrical conductivity. Examples and applications will be described below to explain the effects of the present invention. Example 1 The inside of a quartz tube was filled with nitrogen air, and polyimide (trade name: DuPont, Kapton H) and 5
A mm-thick quartz plate was placed and experiments were conducted to examine the relationship between temperature and thin film formation process in the range of 700° to 1200°C. In the figure, 1 is a heat-resistant polymer, and in this example, Kapton H manufactured by DuPont is used. 2 is a heater, 3 is a 5 mm thick substrate placed inside a quartz tube 4,
5 is a cylinder for feeding nitrogen into the quartz tube 4;
6 is a nitrogen outlet. The table below shows the relationship between temperature and the formation process.
【表】
膜厚はタリステツプを使用して測定し、電導度
は銀ペースト(デユポン社4922)を塗布して4探
針法で測定した。
結果として、温度により皮膜の成長速度が異な
ることから、800℃〜1100℃が最適領域であると
思われる。電導度は温度が高い程良くなる。ま
た、この蒸着膜はカプトンHを直接熱分解した皮
膜の電導度に比べて、その電導度は1/2〜1/3とな
つている。これは、
生成物が異なる。
皮膜密度が異なる。
以上が原因と考えられる。
実施例 2
古河電工(株)製ポリオキサジアゾール(PODフ
イルム、50ミクロン)を窒素気流中(50ml/分の
流速)で、温度900℃に保ち、10分〜2時間、多
孔質のアルミナセラミツクを基板として化学蒸着
を行なう。結果として、アルミナの両面が真黒に
なり、電導性が生ずる。多孔質の孔の中にも均一
に蒸着されている事が顕微鏡観察で明らかにされ
た。下表に時間と抵抗値を示す。
抵抗値は、電極巾2cm、電極間隔4cmで電極は
ステンレススケールを押付けて測定した。[Table] Film thickness was measured using a Talystep, and electrical conductivity was measured using a four-probe method after applying silver paste (DuPont 4922). As a result, since the growth rate of the film differs depending on the temperature, 800°C to 1100°C is considered to be the optimum range. The higher the temperature, the better the conductivity becomes. Further, the conductivity of this vapor-deposited film is 1/2 to 1/3 that of a film obtained by directly thermally decomposing Kapton H. This is because the products are different. The film density is different. The above is thought to be the cause. Example 2 Polyoxadiazole (POD film, 50 microns) manufactured by Furukawa Electric Co., Ltd. was kept at a temperature of 900°C in a nitrogen stream (flow rate of 50 ml/min) for 10 minutes to 2 hours to form a porous alumina ceramic film. Chemical vapor deposition is performed using the substrate as a substrate. As a result, both sides of the alumina become completely black and conductive. Microscopic observation revealed that it was evenly deposited even inside the porous pores. The time and resistance values are shown in the table below. The resistance value was measured with an electrode width of 2 cm and an electrode spacing of 4 cm, with a stainless steel scale pressed against the electrodes.
【表】
次に得られた皮膜のヒータとしての特性をテス
トした。抵抗6.0KΩの基板に交流100Vを印加す
ると基板表面の温度は200℃に上昇した。このヒ
ータを空気中で負荷(100V)耐久試験を行なつ
た結果、1000時間で1%の抵抗増加、約2℃の温
度降下を示すに過ぎなかつた。ヒータとしての用
途例を以下に示す。
表面に30〜100μmのガラス層を持つアルミ
ナセラミクス上に約1000Åの厚さに蒸着し、そ
の上に保護膜を設けたものは、感熱記録のサー
マルヘツドとして使用できる。
管状(例えば内径8mm、外径10mm、長さ100
mm)の石英管の内壁に本発明の電導性薄膜を化
学蒸着したものは暖房用ヒータとして利用する
ことができる。
実施例 3
芳香族ポリアミド樹脂を、窒素気流中(20ml/
分)に置き、同時に厚さ0.5mmのステンレススチ
ールを基板として同気流中に置き、800℃で1時
間化学蒸着を行なつた。結果として耐熱性、耐薬
品性のすぐれたステンレスが作られる。例えば空
気中300℃で500時間以上の耐熱性がある。又硫
酸、硝酸に浸積し、3ケ月間ステンレスが腐蝕を
受けることはなかつた。用途としてセラミツクヒ
ータ用電極やその他、耐腐蝕性電極が上げられ
る。
以上のように化学蒸着は、物理蒸着と較べると
量産性の高い、特殊な装置もいらず大面積の薄膜
が得られるという利点があるが、本発明は含窒素
ヘテロ環を有する縮合系高分子または芳香族ポリ
アミドのいずれかを、不活性気体中で800℃〜
1100℃の温度範囲で他の基板に蒸着することによ
り、電導性薄膜を製造する方法として、きわめて
有用な方法を提供するものである。
なお、本発明の方法により得られた薄膜は感熱
記録用のサーマルヘツド暖房用ヒータ、セラミツ
クヒータ用電極、耐腐蝕性電極等広く応用が期待
できる。[Table] Next, the properties of the obtained film as a heater were tested. When AC 100V was applied to a substrate with a resistance of 6.0KΩ, the temperature of the substrate surface rose to 200℃. When this heater was subjected to a load (100V) durability test in air, it showed only a 1% increase in resistance and a drop in temperature of about 2°C over 1000 hours. An example of its use as a heater is shown below. An alumina ceramic having a glass layer of 30 to 100 μm on its surface, deposited to a thickness of approximately 1000 Å, and a protective film provided thereon can be used as a thermal head for thermosensitive recording. Tubular (e.g. inner diameter 8mm, outer diameter 10mm, length 100mm)
A quartz tube (mm) in which the conductive thin film of the present invention is chemically deposited on the inner wall can be used as a space heater. Example 3 Aromatic polyamide resin was heated in a nitrogen stream (20ml/
At the same time, a 0.5 mm thick stainless steel substrate was placed in the same air flow and chemical vapor deposition was performed at 800° C. for 1 hour. As a result, stainless steel with excellent heat and chemical resistance is produced. For example, it has a heat resistance of 500 hours or more at 300℃ in air. Also, the stainless steel did not suffer any corrosion after being immersed in sulfuric acid and nitric acid for three months. Applications include ceramic heater electrodes and other corrosion-resistant electrodes. As described above, chemical vapor deposition has advantages over physical vapor deposition in that it is highly mass-producible and can produce thin films with a large area without the need for special equipment. or aromatic polyamide at 800°C in an inert gas.
The present invention provides an extremely useful method for producing conductive thin films by vapor deposition on other substrates at a temperature range of 1100°C. The thin film obtained by the method of the present invention can be expected to have wide applications such as thermal head heaters for heat-sensitive recording, electrodes for ceramic heaters, and corrosion-resistant electrodes.
図は本発明の方法を実施する装置の一例を示す
概略構成図である。
1……耐熱性高分子、2……加熱用ヒータ、3
……基板、4……石英管。
The figure is a schematic configuration diagram showing an example of an apparatus for carrying out the method of the present invention. 1...Heat-resistant polymer, 2...Heating heater, 3
...Substrate, 4...Quartz tube.
Claims (1)
芳香族ポリアミドのいずれかを、不活性気体中で
800℃〜1100℃の温度範囲で他の基板に化学蒸着
することを特徴とする電導性薄膜の製造方法。 2 含窒素ヘテロ環を有する縮合系高分子が、ポ
リイミド、ポリアミドイミド、ポリエステルアミ
ド、ポリベンズイミダゾール、ポリオキサジアゾ
ール、ポリベンズチアゾール、ポリチアジアゾー
ルのいずれかであることを特徴とする特許請求の
範囲第1項記載の電導性薄膜の製造方法。 3 芳香族ポリアミドが、m−フエニレンジアミ
ンとイソフタル酸、あるいはp−フエニレンジア
ミンとテレフタル酸のいずれかの縮合反応によつ
て得られたものであることを特徴とする特許請求
の範囲第1項記載の電導性薄膜の製造方法。[Claims] 1. Either a condensed polymer having a nitrogen-containing heterocycle or an aromatic polyamide is prepared in an inert gas.
A method for producing a conductive thin film, characterized by chemical vapor deposition on another substrate at a temperature range of 800°C to 1100°C. 2. Claims characterized in that the condensed polymer having a nitrogen-containing heterocycle is any one of polyimide, polyamideimide, polyesteramide, polybenzimidazole, polyoxadiazole, polybenzthiazole, and polythiadiazole 2. A method for producing a conductive thin film according to item 1. 3. Claim 1, wherein the aromatic polyamide is obtained by a condensation reaction of m-phenylenediamine and isophthalic acid, or p-phenylenediamine and terephthalic acid. A method for producing a conductive thin film as described in .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57024711A JPS58143834A (en) | 1982-02-17 | 1982-02-17 | Preparation of conductive thin membrane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57024711A JPS58143834A (en) | 1982-02-17 | 1982-02-17 | Preparation of conductive thin membrane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58143834A JPS58143834A (en) | 1983-08-26 |
| JPH021529B2 true JPH021529B2 (en) | 1990-01-11 |
Family
ID=12145749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57024711A Granted JPS58143834A (en) | 1982-02-17 | 1982-02-17 | Preparation of conductive thin membrane |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58143834A (en) |
-
1982
- 1982-02-17 JP JP57024711A patent/JPS58143834A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58143834A (en) | 1983-08-26 |
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