JPH0247434B2 - SEKIGAISENSHUKOKANETSUTANKETSUSHOSEIZOSOCHI - Google Patents
SEKIGAISENSHUKOKANETSUTANKETSUSHOSEIZOSOCHIInfo
- Publication number
- JPH0247434B2 JPH0247434B2 JP14169684A JP14169684A JPH0247434B2 JP H0247434 B2 JPH0247434 B2 JP H0247434B2 JP 14169684 A JP14169684 A JP 14169684A JP 14169684 A JP14169684 A JP 14169684A JP H0247434 B2 JPH0247434 B2 JP H0247434B2
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- material rod
- zone
- optical section
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 19
- 230000003287 optical effect Effects 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 8
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000012544 monitoring process Methods 0.000 claims description 2
- 230000005494 condensation Effects 0.000 claims 1
- 238000009833 condensation Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
〔技術分野〕
本発明は赤外線集光加熱単結晶製造装置（以下
FZ装置と略記）に関し、特に結晶育成を自動制
御するFZ装置の改良に関するものである。[Detailed Description of the Invention] [Technical Field] The present invention relates to an infrared condensed heating single crystal manufacturing apparatus (hereinafter referred to as
This paper is concerned with the improvement of FZ equipment that automatically controls crystal growth.
従来、FZ装置において、自動制御は殆んど行
なわれておらず、ラインセンサあるいはエリアセ
ンサ等の光学センサを用いた製造方法が提唱され
ているのみである。
Conventionally, automatic control has hardly been performed in FZ devices, and only manufacturing methods using optical sensors such as line sensors or area sensors have been proposed.
この場合育成結晶からの光信号と、背景の迷光
とを分離する為、回転楕円面鏡の一部を無反射状
態とすることが必要条件とされている。 In this case, in order to separate the optical signal from the grown crystal from background stray light, it is necessary to make a part of the spheroidal mirror non-reflective.
但しこの場合、ランプの焦点が明確に定まらず
パワーのロス、ランプ寿命の問題となる。 However, in this case, the focus of the lamp is not clearly determined, resulting in problems of power loss and lamp life.
本発明は以上の問題点を解決するもので、その
目的とするところは、長時間（10時間以上）安定
して結晶育成を行なうと同時に、ランプの焦点合
せを容易に行ない、パワーロスの防止、及びラン
プの長寿命化をはかることにある。
The present invention is intended to solve the above problems, and its purpose is to stably grow crystals for a long time (10 hours or more), and at the same time, to easily focus the lamp, prevent power loss, and to extend the life of the lamp.
本発明のFZ装置は、ラインセンサあるいはエ
リアセンサ等の光学センサを用いて、溶融帯の直
径、高さ、外形形状等を測定し、これをランプパ
ワー、あるいは溶融帯の高さにフイードバツクす
るものである。
The FZ device of the present invention uses an optical sensor such as a line sensor or an area sensor to measure the diameter, height, external shape, etc. of the molten zone, and feeds this back to the lamp power or the height of the molten zone. It is.
第１図に従来のFZ装置の概要を示す。 Figure 1 shows an overview of a conventional FZ device.
ここで１は回転楕円面鏡、２はハロゲンラン
プ、３は石英管、４はガス導入口、５はガス排出
口、６は原料棒、７は種結晶、８は溶融帯、９は
上部シヤフト、１０は下部シヤフト、１１はレン
ズ（含プリズム、フイルター）、１２はスクリー
ンである。 Here, 1 is a spheroidal mirror, 2 is a halogen lamp, 3 is a quartz tube, 4 is a gas inlet, 5 is a gas outlet, 6 is a raw material rod, 7 is a seed crystal, 8 is a molten zone, and 9 is an upper shaft , 10 is a lower shaft, 11 is a lens (including a prism and a filter), and 12 is a screen.
上部シヤフト９に、原料棒６をセツトし、下部
シヤフト１０に種結晶７をセツトする。 A raw material rod 6 is set on the upper shaft 9, and a seed crystal 7 is set on the lower shaft 10.
ハロゲンランプ２のパワーを上げ、回転楕円面
鏡１により該ハロゲンランプの光を、石英管３の
中央部に集光する。この時ガス導入口４から雰囲
気ガスを導入し、ガス排出口５から雰囲気ガスを
排出する。 The power of the halogen lamp 2 is increased, and the spheroidal mirror 1 focuses the light from the halogen lamp onto the center of the quartz tube 3. At this time, atmospheric gas is introduced from the gas inlet 4 and exhausted from the gas exhaust port 5.
集光部において、原料棒６の先端と、種結晶７
の先端とを溶融接触させて、溶融帯８を形成す
る。この時上部シヤフト９及び下部シヤフト１０
は、同方向ないしは逆方向に回転させ、上下のシ
ヤフトが同時に下方へ移動することにより、結晶
が育成され、レンズ１１を経てスクリーン１２上
へ写し出された画像を観察しながら、ランプパワ
ーの制御及びギヤツプ調整を行なう。 In the light collecting section, the tip of the raw material rod 6 and the seed crystal 7
A molten zone 8 is formed by making molten contact with the tip of the molten metal. At this time, the upper shaft 9 and the lower shaft 10
crystals are grown by rotating in the same or opposite directions and moving the upper and lower shafts downward at the same time.While observing the image projected onto the screen 12 through the lens 11, the lamp power is controlled and Perform gap adjustment.
第２図に本発明の自動制御システムのブロツク
図を示す。 FIG. 2 shows a block diagram of the automatic control system of the present invention.
ここで２１は光学系、２２はセンサ部、２３は
AD変換器、２４はコントローラ部、２５は表示
部、２６はキー入力部、２７はプリンター部、２
８はギヤツプ調整部、２９はDA変換器、３０は
ランプパワーコントロール部である。 Here, 21 is an optical system, 22 is a sensor section, and 23 is a
AD converter, 24 is a controller section, 25 is a display section, 26 is a key input section, 27 is a printer section, 2
8 is a gap adjustment section, 29 is a DA converter, and 30 is a lamp power control section.
溶融帯の像は光学系２１を経て、センサ部２２
に到達し、AD変換器２３を経てコントローラ部
２４で演算処理される。処理された信号は、DA
変換器２９を経て、ランプパワーコントロール部
３０でランプパワーを調節し、溶融帯の温度を制
御する。あるいはギヤツプ調整部２８で融液の高
さを調節する。 The image of the melted zone passes through the optical system 21 and is sent to the sensor section 22.
, and is processed by the controller unit 24 via the AD converter 23. The processed signal is DA
After passing through a converter 29, a lamp power control section 30 adjusts the lamp power and controls the temperature of the melting zone. Alternatively, the height of the melt can be adjusted using the gap adjustment section 28.
一方キー入力部２６は、各種定数を予めインプ
ツトし、その後も必要に応じて随時変更を行な
う。表示部２５はその時のランプパワー、測定径
等の表示を行ない、プリンター部２７は所定の時
間毎にランプパワー、測定径、溶融帯の高さ等を
プリントアウトする。 On the other hand, the key input section 26 inputs various constants in advance and thereafter changes them as needed. The display section 25 displays the lamp power, measured diameter, etc. at that time, and the printer section 27 prints out the lamp power, measured diameter, height of the molten zone, etc. at predetermined intervals.
結晶育成を自動制御する場合、回転楕円面鏡の
一部を無反射状態とすることが必要条件である。
即ち、第３図にスクリーン上の映像の例を示す
が、従来のFZ装置では、原料棒３１、育成結晶
３２、溶融帯３３の他に、ランプのフイラメント
像３４が観察され、溶融帯の信号が十分に得られ
ない。そこで、ランプのフイラメント像を消去す
る為、第４図に示す如く、集光装置枠部すなわち
回転楕円面鏡４１の内部で、集光装置枠部のほぼ
中心に配置された溶融帯部すなわち石英管４４
と、集光装置枠部に設けられたフローテイングゾ
ーン監視のための光学部すなわちレンズ４５とを
結ぶ延長線上で、光学部の反射側の集光装置枠部
に反射防止板４３を設けている。この反射防止板
４３により、ハロゲンランプ４２の像を消去し、
溶融帯の信号レベルを得ている。 When automatically controlling crystal growth, it is a necessary condition that a part of the spheroidal mirror be in a non-reflecting state.
That is, an example of an image on the screen is shown in FIG. 3. In the conventional FZ apparatus, in addition to the raw material rod 31, the grown crystal 32, and the molten zone 33, a filament image 34 of the lamp is observed, and the signal of the molten zone is I can't get enough of it. Therefore, in order to erase the filament image of the lamp, as shown in FIG. pipe 44
An anti-reflection plate 43 is provided on the condensing device frame on the reflection side of the optical section on an extension line connecting the optical section and the lens 45 for monitoring the floating zone provided on the condensing device frame. . This anti-reflection plate 43 erases the image of the halogen lamp 42,
Obtaining the signal level of the melt zone.
しかし、ハロゲンランプの焦点を合わせること
は、省エネルギーあるいはランプの寿命の点から
も重要な条件であり、その改善策が望まれてい
る。 However, focusing a halogen lamp is an important condition from the point of view of energy saving and lamp life, and improvement measures are desired.
以下、本発明について、実施例に基づき詳細に
説明する。
Hereinafter, the present invention will be described in detail based on examples.
〔実施例 １〕
反射状態は従来のFZ装置のまま、回転楕円面
鏡（金メツキ面）を使用し、その上に反射防止板
を設ける方式。[Example 1] The reflection state is the same as the conventional FZ device, but a spheroidal mirror (gold-plated surface) is used, and an anti-reflection plate is placed on top of it.
第５図に回転楕円面鏡の平面図を示す。 FIG. 5 shows a plan view of the spheroidal mirror.
ここで５１は回転楕円面鏡、５２は下地基板、
５３は反射防止板である。 Here, 51 is a spheroidal mirror, 52 is a base substrate,
53 is an antireflection plate.
反射防止板としては、できる限に反射率が低
く、しかも黒色の素材が要求され、例えば、反射
防止板を鉄系の材料で作製し、黒染め、あるいは
艶消しの黒色琺瑯仕上げを施す方法。 The anti-reflection plate needs to be made of a black material with as low a reflectance as possible. For example, the anti-reflection plate is made of an iron-based material and is dyed black or given a matte black enamel finish.
又、反射防止板を金属材料で作製し、その表面
に黒色のセラミツクを溶射する、あるいはセラミ
ツクの表面にカーボンペーストを焼き付けた基板
を挿入する方法。 Another method is to make the anti-reflection plate from a metal material and then thermally spray black ceramic onto its surface, or insert a substrate with carbon paste baked onto the ceramic surface.
反射防止板を直接、黒色のセラミツク、グラフ
アイトを作製する方法等が挙げられる。 Examples include a method of directly producing an antireflection plate from black ceramic or graphite.
これらは、いずれも回転楕円面鏡にネジ穴を設
け、下地基板及び反射防止板をネジ止めする。 In both of these, screw holes are provided in the spheroidal mirror, and the base substrate and antireflection plate are screwed together.
〔実施例 ２〕
反射状態、無反射状態とも下地基板を作製し、
回転楕円面鏡の後部にいずれかをセツトする方
式。[Example 2] A base substrate was prepared in both a reflective state and a non-reflective state,
A method in which either one is set at the rear of the spheroidal mirror.
第６図に回転楕円面鏡を第５図のＡ−A′に沿
つて開いた正面部を示す。 FIG. 6 shows the front side of the spheroidal mirror opened along the line A-A' in FIG.
ここで６１は回転楕円面鏡、６２は下地基板で
ある。下地基板６２は予め設けられた溝に横から
挿入する方法である。 Here, 61 is a spheroidal mirror, and 62 is a base substrate. The base substrate 62 is inserted from the side into a pre-provided groove.
反射状態の下地基板は回転楕円面鏡と同材質、
同等の表面仕上げとし、無反射状態は実施例１と
同様の素材を使用する。 The base substrate in the reflective state is made of the same material as the spheroidal mirror.
The surface finish is the same, and the same material as in Example 1 is used in the non-reflective state.
以上述べたように、本発明によれば光学部と溶
融帯部との延長線上で且つ光学部の反射側の集光
装置枠部に取外し可能である反射防止板を設ける
ことにより、
熱源としてのランプのフイラメント像が全く観
察されず、フローテイングの信号レベルを的確に
フイールドバツクでき、長時間安定した単結晶の
育成が可能である。
As described above, according to the present invention, by providing a removable anti-reflection plate on the condensing device frame on the reflection side of the optical section on the extension line of the optical section and the melting zone section, it can be used as a heat source. No filament image of the lamp is observed, the floating signal level can be accurately feedbacked, and single crystals can be grown stably for a long time.
また、必要に応じて反射防止板は何時でも取外
すことができるので、装置の性能は何等損なうこ
となく使用可能である。 Further, since the anti-reflection plate can be removed at any time if necessary, the device can be used without any loss in performance.
しかも反射状態が簡便に得られる為、ランプ交
換時の焦点合せが容易となり、ランプの長寿命化
及びパワーのロス防止に大きな効果を有する。 Moreover, since the reflective state can be easily obtained, focusing is facilitated when replacing the lamp, which has a great effect on extending the life of the lamp and preventing power loss.
従つて、ルビー、サフアイア、アレキサンドラ
イト等の宝石用単結晶は勿論、YIG、YAG、
GGG等の工業用単結晶の育成にも大きく貢献す
る効果を有する。 Therefore, not only gemstone single crystals such as ruby, sapphire, and alexandrite, but also YIG, YAG,
It has the effect of greatly contributing to the growth of industrial single crystals such as GGG.
第１図は従来のFZ装置の概要を示す。第２図
は本発明の自動制御システムのブロツク図を示
す。第３図はスクリーン上の映像の例を示す図。
第４図は回転楕円面鏡の平面図を示す。第５図は
本発明の実施例を示す回転楕円面鏡の平面図を示
す。第６図は本発明の実施例を示す回転楕円面鏡
を第５図のＡ−A′に沿つて開いた正面図を示す。
Figure 1 shows an overview of a conventional FZ device. FIG. 2 shows a block diagram of the automatic control system of the present invention. FIG. 3 is a diagram showing an example of an image on the screen.
FIG. 4 shows a plan view of the spheroidal mirror. FIG. 5 shows a plan view of a spheroidal mirror showing an embodiment of the present invention. FIG. 6 shows a front view of a spheroidal mirror showing an embodiment of the present invention taken along line A-A' in FIG.
Claims (1)
を、反射鏡又はレンズを用いて集光し、該集光部
において、原料棒を溶融して前記原料棒と前記原
料棒の下方に相対向して配置された種結晶とを結
合してフローテイングゾーンを形成し、前記フロ
ーテイングゾーンを一定速度で原料棒側に移動す
ることにより、前記種結晶上に結晶を析出させる
赤外線集光加熱単結晶製造装置において、 前記赤外線集光加熱単結晶製造装置は、反射鏡
を有する集光装置枠部と、前記集光装置枠部のほ
ぼ中心に設けられた溶融帯部と、前記溶融帯部内
に形成される前記フローテイングゾーンを監視す
るための前記集光装置枠部に設けられた光学部
と、前記溶融帯部と前記光学部とを結ぶ延長線上
で且つ前記光学部の反対側の前記集光装置枠部に
設けられた下地基板と、前記下地基板上に取外し
可能に取付られた反射防止板とを有することを特
徴とする赤外線集光加熱単結晶製造装置。[Scope of Claims] 1. Light emitted from a high-temperature light source such as a halogen lamp is focused using a reflecting mirror or a lens, and in the focusing section, the raw material rod is melted to separate the raw material rod and the raw material rod. The infrared rays combine with the seed crystals arranged facing each other downward to form a floating zone, and the floating zone is moved toward the raw material rod at a constant speed to precipitate crystals on the seed crystals. In the condensing heating single crystal manufacturing apparatus, the infrared concentrating heating single crystal manufacturing apparatus includes: a condensing device frame having a reflecting mirror; a melting zone provided approximately at the center of the concentrating device frame; an optical section provided in the condensing device frame for monitoring the floating zone formed within the melting zone; and an optical section on the extension line connecting the melting zone and the optical section and opposite to the optical section. An apparatus for producing a single crystal by infrared condensation heating, comprising a base substrate provided on the frame of the condenser on the side, and an antireflection plate removably attached to the base substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14169684A JPH0247434B2 (en) | 1984-07-09 | 1984-07-09 | SEKIGAISENSHUKOKANETSUTANKETSUSHOSEIZOSOCHI |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14169684A JPH0247434B2 (en) | 1984-07-09 | 1984-07-09 | SEKIGAISENSHUKOKANETSUTANKETSUSHOSEIZOSOCHI |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6121992A JPS6121992A (en) | 1986-01-30 |
| JPH0247434B2 true JPH0247434B2 (en) | 1990-10-19 |
Family
ID=15298080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14169684A Expired - Lifetime JPH0247434B2 (en) | 1984-07-09 | 1984-07-09 | SEKIGAISENSHUKOKANETSUTANKETSUSHOSEIZOSOCHI |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0247434B2 (en) |
-
1984
- 1984-07-09 JP JP14169684A patent/JPH0247434B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6121992A (en) | 1986-01-30 |
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