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JPH0541597B2 - - Google Patents
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JPH0541597B2 - - Google Patents

Info

Publication number
JPH0541597B2
JPH0541597B2 JP8449184A JP8449184A JPH0541597B2 JP H0541597 B2 JPH0541597 B2 JP H0541597B2 JP 8449184 A JP8449184 A JP 8449184A JP 8449184 A JP8449184 A JP 8449184A JP H0541597 B2 JPH0541597 B2 JP H0541597B2
Authority
JP
Japan
Prior art keywords
optical system
shows
zone
section
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP8449184A
Other languages
Japanese (ja)
Other versions
JPS60226484A (en
Inventor
Kuniharu Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP8449184A priority Critical patent/JPS60226484A/en
Publication of JPS60226484A publication Critical patent/JPS60226484A/en
Publication of JPH0541597B2 publication Critical patent/JPH0541597B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • C30B13/22Heating of the molten zone by irradiation or electric discharge
    • C30B13/24Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • C30B13/30Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【発明の詳細な説明】 〔技術分野〕 本発明は、FZ装置に関し、特に結晶育成を、
自動的に行なうFZ装置に関する。
[Detailed Description of the Invention] [Technical Field] The present invention relates to an FZ apparatus, particularly for crystal growth.
Regarding automatic FZ equipment.

〔従来技術〕[Prior art]

従来、FZ装置での結晶合成に自動制御は行な
われておらず、回転楕円面鏡の一箇所に設けられ
る孔からの、画像をスクリーン上で観察するのみ
であつた。
Conventionally, crystal synthesis in an FZ apparatus has not been automatically controlled, and images have only been observed on a screen through a hole provided in one part of a spheroidal mirror.

従つて、結晶育成を行なうためには、常時画像
を監視し、ランプパワーあるいはギヤツプ調整を
手動で行なわなければならなかつた。
Therefore, in order to grow crystals, it was necessary to constantly monitor images and manually adjust the lamp power or gap.

〔目的〕〔the purpose〕

本発明は以上の問題点を解決するもので、その
目的とするところは、長時間(10時間以上)安定
して結晶育成を行なうFZ装置を提供することに
ある。
The present invention solves the above problems, and its purpose is to provide an FZ apparatus that can stably grow crystals for a long time (10 hours or more).

〔概要〕〔overview〕

本発明のFZ装置(赤外線集光加熱単結晶製造
装置)は、レンズ、プリズム、ハーフミラー、反
射鏡等の光学系の中間に、複数の偏光フイルター
を設け、回転楕円面鏡の一部に設けた孔から、溶
融帯の像を、該光学系を経て、光学センサ上に結
像させ、該光学センサからの信号を処理して結晶
の自動育成を行なうもので、光学センサにおける
信号のSN比が高く制御精度の高いことを特徴と
する。
The FZ device (infrared focused heating single crystal manufacturing device) of the present invention has a plurality of polarizing filters installed in the middle of an optical system such as a lens, a prism, a half mirror, and a reflecting mirror, and a plurality of polarizing filters are installed in a part of the spheroidal mirror. The image of the molten zone is formed from the hole through the optical system onto the optical sensor, and the signal from the optical sensor is processed to automatically grow the crystal. It is characterized by high control accuracy.

第1図に従前のFZ装置の概要を示す。 Figure 1 shows an overview of the previous FZ device.

ここで、1は回転楕円面鏡、2はハロゲンラン
プ、3は石英管、4はガス導入口、5はガス排出
口、6は原料棒、7は種結晶、8は溶融帯、9は
上部シヤフト、10は下部シヤフト、11はレン
ズ(含プリズム)、12はスクリーンである。
Here, 1 is a spheroidal mirror, 2 is a halogen lamp, 3 is a quartz tube, 4 is a gas inlet, 5 is a gas outlet, 6 is a raw material rod, 7 is a seed crystal, 8 is a molten zone, and 9 is an upper part 10 is a lower shaft, 11 is a lens (including a prism), and 12 is a screen.

上部シヤフト9に原料棒6をセツトし、下部シ
ヤフト10に種結晶7をセツトする。
A raw material rod 6 is set on the upper shaft 9, and a seed crystal 7 is set on the lower shaft 10.

ハロゲンランプ2のパワーを投入し、回転楕円
面鏡1により該ハロゲンランプの光を石英管3の
中央部に集光する。
The power of the halogen lamp 2 is turned on, and the spheroidal mirror 1 focuses the light from the halogen lamp onto the center of the quartz tube 3.

この時、ガス導入口4から雰囲気ガスを導入
し、ガス排出口5から雰囲気ガスを排出する。
At this time, atmospheric gas is introduced through the gas inlet 4 and exhausted through the gas exhaust port 5.

集光部において、原料棒6の先端と種結晶7の
先端とを溶融接触させて、溶融帯8を形成する。
この時、上部シヤフト9及び下部シヤフト10
は、同方向ないしは逆方向に回転させ、上下のシ
ヤフトが同時に下方へ移動する。
In the light condensing section, the tip of the raw material rod 6 and the tip of the seed crystal 7 are brought into molten contact to form a molten zone 8.
At this time, the upper shaft 9 and the lower shaft 10
are rotated in the same direction or in opposite directions, and the upper and lower shafts move downward at the same time.

該集光部の状況をレンズ11(含プリズム)及
び反射鏡を経て、スクリーン12上に投映し、常
時、該投映像を監視しつつ、ランプパワーあるい
は原料棒と種結晶の間隔(ギヤツプ)を調節しな
がら、結晶育成を行なう。
The state of the light condensing section is projected onto the screen 12 via the lens 11 (including the prism) and the reflecting mirror, and while constantly monitoring the projected image, the lamp power or the gap between the raw material rod and the seed crystal is adjusted. Crystal growth is performed while making adjustments.

第2図に従前のFZ装置の光学系の概要を示す。
ここでaは平面図、bは側面図である。
Figure 2 shows an overview of the optical system of the previous FZ device.
Here, a is a plan view and b is a side view.

21は溶融帯、22はレンズ(含プリズム)、
23は反射鏡、24はスクリーン、25はフロン
トパネルである。
21 is a melting zone, 22 is a lens (including a prism),
23 is a reflecting mirror, 24 is a screen, and 25 is a front panel.

第3図は本発明のFZ装置で使用する自動制御
システムのブロツク図を示す。
FIG. 3 shows a block diagram of the automatic control system used in the FZ device of the present invention.

ここで31は光学系、32はセンサ部、33は
コントローラ部、34はキー入力部、35はDA
変換器、36はAD変換器、37は表示部、38
はプリンター部、39はランプパワーコントロー
ル部、40はギヤツプ調整部である。
Here, 31 is an optical system, 32 is a sensor section, 33 is a controller section, 34 is a key input section, and 35 is a DA
Converter, 36 is an AD converter, 37 is a display unit, 38
39 is a lamp power control section, and 40 is a gap adjustment section.

溶融帯の像は、光学系31を経て、センサ部3
2に到達し、コントロール部39でランプパワー
を調節し、溶融帯の温度を制御するか、又はギヤ
ツプ調整部40で融液の高さを調節する。
The image of the melted zone passes through the optical system 31 and is sent to the sensor section 3.
2, the control section 39 adjusts the lamp power to control the temperature of the melting zone, or the gap adjustment section 40 adjusts the height of the melt.

ランプパワー、あるいはギヤツプは、AD変換
器36を経て、コントロール部33に再度フイー
ドバツクされる。
The lamp power or gap is fed back to the control unit 33 via the AD converter 36.

一方、キー入力部34では、初期の各種定数を
インプツトし、表示部37は、その時のランプパ
ワー等を表示する。更にプリンター部38では、
所定の時間毎に、ランプパワー、溶融帯径、溶融
帯の高さ等をプリントアウトする。
On the other hand, the key input section 34 inputs various initial constants, and the display section 37 displays the lamp power and the like at that time. Furthermore, in the printer section 38,
The lamp power, melting zone diameter, melting zone height, etc. are printed out at predetermined intervals.

自動制御を行なう場合、光学センサーにおける
信号のSN比は、その後の演算処理に極めて大き
な影響を与え、SN比の高いことが必須条件とな
る。又、育成中に光量のレベルが変化することも
あり、それを簡便に調節できることが望まれる。
When performing automatic control, the signal-to-noise ratio of the signal from the optical sensor has an extremely large effect on subsequent calculation processing, and a high signal-to-noise ratio is an essential condition. Furthermore, the level of light intensity may change during growth, and it is desirable to be able to easily adjust it.

〔実施例〕〔Example〕

以下、本発明について、実施例に基づき、詳細
に説明する。
Hereinafter, the present invention will be described in detail based on Examples.

第4図及び第5図は本発明装置の光学系の平面
図を示す。
4 and 5 show plan views of the optical system of the apparatus of the present invention.

ここで41及び51は溶融帯、42及び52は
偏光フイルター、43及び53はレンズ(含プリ
ズム)、44及び54は光学センサ、45及び5
5はフロントパネル、56はハーフミラー、57
は反射鏡、58はスクリーンである。
Here, 41 and 51 are melting zones, 42 and 52 are polarizing filters, 43 and 53 are lenses (including prisms), 44 and 54 are optical sensors, 45 and 5
5 is the front panel, 56 is the half mirror, 57
is a reflecting mirror, and 58 is a screen.

第6図は光学センサとしてラインセンサを使用
し、演算処理を行なつた時のオシロスコープによ
る信号波形を示す。
FIG. 6 shows a signal waveform obtained by an oscilloscope when a line sensor is used as an optical sensor and arithmetic processing is performed.

ここで61はセンサの光量レベルの直接値であ
り、62はこれを二値化した信号である。
Here, 61 is a direct value of the light amount level of the sensor, and 62 is a signal obtained by converting this into a binary value.

aは二枚の偏光フイルターをほぼ直角の位置に
重ね合せて光量不足の場合、bは適正値、cは二
枚の偏光フイルターをほぼ平行の位置に重ね合せ
て光量過剰の場合である。
A is a case where two polarizing filters are superimposed at substantially right angles and there is an insufficient amount of light, b is an appropriate value, and c is a case where two polarizing filters are superimposed at substantially parallel positions and there is an excess amount of light.

aの場合、二値化信号がXの如く途中で切れる
為、誤つた径の判定をしてしまい、逆にcの場合
光量の直接値がYの如く端で上昇する為、径の両
端の判作が不正確になつてしまう。
In case a, the binary signal is cut off in the middle as shown in The judgment becomes inaccurate.

結晶の材質により、所要パワーが異なる為、溶
融帯の輝度が変化するが、本発明では、偏光フイ
ルターを回転させて、二枚のフイルターの重なる
角度を変化させるだけで光量のレベル調節が可能
であり、運転中にもスムーズに光量の調節が可能
である。
Since the required power differs depending on the crystal material, the brightness of the melting zone changes, but with the present invention, the level of light intensity can be adjusted simply by rotating the polarizing filter and changing the angle at which the two filters overlap. This allows you to smoothly adjust the amount of light even while driving.

〔効果〕〔effect〕

以上述べたように、本発明によれば、結晶の材
質が変化しても、適正な信号レベルが得られ、長
時間安定して結晶を育成することが可能である。
従つて、ルビー、サフアイア、アレキサンドライ
ト等の宝石用単結晶は勿論、YIG、YAG、GGG
等の工業用単結晶にも使用可能であり、色ムラ、
気泡、欠陥等の無い、高品質な単結晶を育成でき
る。
As described above, according to the present invention, even if the material of the crystal changes, an appropriate signal level can be obtained, and the crystal can be grown stably for a long time.
Therefore, not only gemstone single crystals such as ruby, sapphire, and alexandrite, but also YIG, YAG, and GGG.
It can also be used for industrial single crystals such as
High-quality single crystals without bubbles or defects can be grown.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従前のFZ装置の概要を示す。第2図
は従来のFZ装置の光学系の概要を示す。第3図
は本発明のFZ装置で使用する自動制御システム
のブロツク図を示す。第4図は本発明のFZ装置
の光学系の概要を示す。第5図は本発明のFZ装
置の他の光学系の概要を示す。第6図は本発明の
FZ装置においてラインセンサを使用したときの、
信号波形を示す。
Figure 1 shows an overview of the conventional FZ device. Figure 2 shows an overview of the optical system of a conventional FZ device. FIG. 3 shows a block diagram of the automatic control system used in the FZ device of the present invention. FIG. 4 shows an outline of the optical system of the FZ device of the present invention. FIG. 5 shows an outline of another optical system of the FZ device of the present invention. Figure 6 shows the present invention.
When using a line sensor in FZ equipment,
Shows the signal waveform.

Claims (1)

【特許請求の範囲】[Claims] 1 回転楕円面鏡の一部に設けた孔から、レン
ズ、プリズム、ハーフミラー、反射鏡等の光学系
を経て、光学センサに溶融帯の像を結像し、溶融
帯の直径、又は外形形状を、ランプパワーあるい
は、溶融帯の高さにフイードバツクして自動制御
を行なう赤外線集光加熱単結晶製造装置におい
て、該光学系に、複数の偏光フイルターを設ける
ことを特徴とする赤外線集光加熱単結晶製造装
置。
1 An image of the molten zone is formed on an optical sensor through an optical system such as a lens, prism, half mirror, or reflector through a hole provided in a part of the spheroidal mirror, and the diameter or external shape of the molten zone is determined. In an infrared condensed heating single crystal manufacturing apparatus that automatically controls the temperature by feeding back the lamp power or the height of the melting zone, the optical system is provided with a plurality of polarizing filters. Crystal manufacturing equipment.
JP8449184A 1984-04-26 1984-04-26 Single crystal preparation apparatus heated by focused infrared radiation Granted JPS60226484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8449184A JPS60226484A (en) 1984-04-26 1984-04-26 Single crystal preparation apparatus heated by focused infrared radiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8449184A JPS60226484A (en) 1984-04-26 1984-04-26 Single crystal preparation apparatus heated by focused infrared radiation

Publications (2)

Publication Number Publication Date
JPS60226484A JPS60226484A (en) 1985-11-11
JPH0541597B2 true JPH0541597B2 (en) 1993-06-23

Family

ID=13832116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8449184A Granted JPS60226484A (en) 1984-04-26 1984-04-26 Single crystal preparation apparatus heated by focused infrared radiation

Country Status (1)

Country Link
JP (1) JPS60226484A (en)

Also Published As

Publication number Publication date
JPS60226484A (en) 1985-11-11

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