JPH0534317B2 - - Google Patents
Info
- Publication number
- JPH0534317B2 JPH0534317B2 JP58181211A JP18121183A JPH0534317B2 JP H0534317 B2 JPH0534317 B2 JP H0534317B2 JP 58181211 A JP58181211 A JP 58181211A JP 18121183 A JP18121183 A JP 18121183A JP H0534317 B2 JPH0534317 B2 JP H0534317B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- melt
- diameter
- section
- lamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
本発明はFZ法における、新規な単結晶の製造
方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a novel single crystal manufacturing method using the FZ method.
本発明の目的は、良質な単結晶を得ることであ
る。 The purpose of the present invention is to obtain a high quality single crystal.
本発明の他の目的は、装置の自動化を促進し、
安価な単結晶を得ることである。 Other objects of the invention are to facilitate automation of the device;
The goal is to obtain inexpensive single crystals.
従来メルト法による単結晶製造方法として、ベ
ルヌーイ法及び引き上げ法が知られている。しか
しベルヌーイ法は水素ガスを使用する為、安全上
問題があり、引き上げ法は高価なルツボを必要と
し、汚染の心配がある等の問題点を有している。
そこで、ルツボが不要で汚染の心配がなく、危険
なガスを使用する必要のないFZ法が注目を集め
ている。 Conventionally, the Bernoulli method and the pulling method are known as single crystal manufacturing methods using the melt method. However, since the Bernoulli method uses hydrogen gas, there are safety issues, and the pulling method requires an expensive crucible and has problems such as concerns about contamination.
Therefore, the FZ method is attracting attention because it does not require a crucible, there is no need to worry about contamination, and it does not require the use of dangerous gases.
第1図にFZ法の概要を示す。 Figure 1 shows an overview of the FZ method.
ここで、1は回転楕円面鏡、2はハロゲンラン
プ、3は石英管、4はガス導入口、5はガス排出
口、6は原料棒、7は種結晶、8は溶融帯、9は
上部シヤフト、10は下部シヤフトである。 Here, 1 is a spheroidal mirror, 2 is a halogen lamp, 3 is a quartz tube, 4 is a gas inlet, 5 is a gas outlet, 6 is a raw material rod, 7 is a seed crystal, 8 is a molten zone, and 9 is an upper part Shaft 10 is a lower shaft.
上部シヤフト9に原料棒6をセツトし、下部シ
ヤフト10に、種結晶7をセツトする。 A raw material rod 6 is set on the upper shaft 9, and a seed crystal 7 is set on the lower shaft 10.
ハロゲンランプ2のパワーを上げ、回転楕円面
鏡1により該ハロゲンランプの光を石英管3の中
央部に集光する。この時、同時にガス導入口4か
ら雰囲気ガスを導入し、ガス排出口5から雰囲気
ガスを排出する。なお雰囲気ガスとしては、通常
空気が使用されるが、材質に応じて、アルゴン、
窒素、一酸化炭素、二酸化炭素、水素等が使用さ
れる。 The power of the halogen lamp 2 is increased, and the light from the halogen lamp is focused onto the center of the quartz tube 3 by the spheroidal mirror 1. At this time, atmospheric gas is simultaneously introduced from the gas inlet 4 and exhausted from the gas outlet 5. Note that air is normally used as the atmospheric gas, but depending on the material, argon,
Nitrogen, carbon monoxide, carbon dioxide, hydrogen, etc. are used.
集光部において、原料棒6の先端と種結晶7の
先端とを溶融接触させて、溶融帯8を形成する。
この時、上部シヤフト9及び下部シヤフト10
は、同方向ないしは逆方向に回転させ、上下のシ
ヤフトが同時に下方へ移動することにより結晶が
育成される。 In the light condensing section, the tip of the raw material rod 6 and the tip of the seed crystal 7 are brought into molten contact to form a molten zone 8.
At this time, the upper shaft 9 and the lower shaft 10
are rotated in the same direction or in opposite directions, and the upper and lower shafts simultaneously move downward to grow crystals.
かかるFZ法における結晶育成では、これまで
結晶径を一定に保つための制御は行なわれておら
ず、専ら溶融帯の状況を目視で観察しながら、ラ
ンプパワーの制御、あるいは溶融帯の高さを調節
していた。 Until now, in crystal growth using the FZ method, no control has been carried out to keep the crystal diameter constant, and only the lamp power has been controlled or the height of the molten zone has been controlled while visually observing the state of the molten zone. I was adjusting.
この為結晶外径が変動し、極端な場合には融液
のタレ、あるいは溶融帯での破断が生じて、良質
な単結晶が得られなかつた。 As a result, the outer diameter of the crystal fluctuates, and in extreme cases, the melt sag or breakage occurs in the molten zone, making it impossible to obtain a high-quality single crystal.
又、1人の人が監視できる装置台数も限定さ
れ、結晶の価格も高価なものとなつていた。 Furthermore, the number of devices that one person can monitor is limited, and the cost of crystals has become expensive.
本発明はかかる欠点を除去するもので、回転楕
円面鏡内のスクリーンと対向する部位を無反射状
態とすることにより、ランプ像を消去し、育成中
の結晶と背部のコントラスト比を高めることが可
能となつた結果、種結晶をセツトしたシヤフトか
ら回転同期信号を取り出し、結晶の所定部分の直
径を光学的検出法を用いて測定し、これを融液の
温度、あるいは融液の高さにフイードバツクする
ことにより極めて結晶外径の安定した単結晶が得
られた。 The present invention eliminates this drawback, and by making the part of the spheroidal mirror that faces the screen non-reflective, it is possible to eliminate the lamp image and increase the contrast ratio between the growing crystal and the back. As a result, the rotation synchronization signal is extracted from the shaft on which the seed crystal is set, the diameter of a predetermined portion of the crystal is measured using an optical detection method, and this is adjusted to the temperature of the melt or the height of the melt. By feedback, a single crystal with an extremely stable outer diameter was obtained.
以下、実施例により本発明について更に詳細に
説明する。 Hereinafter, the present invention will be explained in more detail with reference to Examples.
実施例 1
第2図に、本発明に基づくシステムのブロツク
図を示す。Embodiment 1 FIG. 2 shows a block diagram of a system based on the present invention.
ここで、21は光学系、22はカメラ部、23
はタイミング部、24はキー入力部、25はコン
トローラ部、26はDA変換器、27はAD変換
器、28は表示部、29はプリンター部、30は
ランプパワーコントロール部、31はギヤツプ調
整部である。 Here, 21 is an optical system, 22 is a camera section, 23
is a timing section, 24 is a key input section, 25 is a controller section, 26 is a DA converter, 27 is an AD converter, 28 is a display section, 29 is a printer section, 30 is a lamp power control section, and 31 is a gap adjustment section. be.
カメラ部22はライセンサ、あるいはビデオカ
メラ等のエリアセンサのいずれも使用可能である
が、高解像度を必要とする場合にはラインセンサ
を使用する。 As the camera section 22, either a license sensor or an area sensor such as a video camera can be used, but if high resolution is required, a line sensor is used.
コントローラ部25は、タイミング部23の信
号を得た時のみカメラ部22からの像の処理を行
なう。これは結晶の断面が真円ではなく、ほぼ楕
円形状となる為、下部シヤフト10から回転同期
信号を取り出し、結晶の定められた部分の直径を
測定する。 The controller section 25 processes the image from the camera section 22 only when it receives the signal from the timing section 23. Since the cross section of the crystal is not a perfect circle but approximately elliptical, a rotation synchronization signal is extracted from the lower shaft 10 and the diameter of a predetermined portion of the crystal is measured.
コントローラ部25で処理された信号は、DA
変換器26を経て、ランプパワーコントロール部
30でランプパワーを調節し、融液の温度を制御
する。あるいはギヤツプ調整31でギヤツプ調整
を行ない、融液の高さを調節する。 The signal processed by the controller section 25 is sent to the DA
After passing through the converter 26, a lamp power control unit 30 adjusts the lamp power and controls the temperature of the melt. Alternatively, the gap adjustment 31 is used to adjust the gap and adjust the height of the melt.
なお、ランプパワー及びギヤツプは、AD変換
器27を経てコントローラ25に再度フイードバ
ツクされる。 Note that the lamp power and gap are fed back to the controller 25 via the AD converter 27.
一方、キー入力部24では初期の各種定数をイ
ンプツトし、表示部28はその時のランプパワー
等を表示する。更にプリンター部29は、所定の
時間毎にPIDの各定数、その時の結晶径等をプリ
ントアウトする。 On the other hand, the key input section 24 inputs various initial constants, and the display section 28 displays the lamp power and the like at that time. Further, the printer unit 29 prints out each constant of the PID, the crystal diameter at that time, etc. at predetermined intervals.
第3図は、従来装置においてスクリーン上に映
し出された像の状況を示す。 FIG. 3 shows the state of the image projected on the screen in the conventional device.
ここで、41は原料棒、42は育成結晶、43
は溶融帯、44はランプの像である。 Here, 41 is a raw material rod, 42 is a grown crystal, 43
is a melting zone, and 44 is an image of a lamp.
従来のFZ装置は、回転楕円面鏡の内部が全面
にわたり金メツキされている為、該回転楕円面鏡
内のスクリーンと対向する部位のランプ像がスク
リーン上に映し出され、結晶と背部のコントラス
ト比を低下せしめる為コントローラ部25におけ
る信号処理に大きな負担がかかつていた。 In conventional FZ devices, the entire inside of the spheroidal mirror is plated with gold, so the lamp image of the part of the spheroidal mirror facing the screen is projected on the screen, and the contrast ratio between the crystal and the back is improved. This has placed a heavy burden on signal processing in the controller section 25.
そこで第4図に示す如く、回転楕円面鏡51内
のスクリーン52と対向する位置に反射防止板5
3をセツトし、ランプ54の像が石英チユーブ5
5、及びレンズ56を透過して、スクリーン上に
映し出されるのを防止した。 Therefore, as shown in FIG.
3, and the image of the lamp 54 is placed on the quartz tube 5.
5 and the lens 56 to prevent it from being projected on the screen.
この時の結晶径測定の様子を第5図に示す。 FIG. 5 shows how the crystal diameter was measured at this time.
ここで、61は原料棒、62は育成結晶、63
は溶融帯である。今、結晶径測定部をA−A′(固
液界面の上0.5〜5ミリメートルの部位)とする
と、従来目視では結晶径の制御精度が10ミリメー
トル±0.5ミリメートル前後であつたが、±0.05ミ
リメートル以内に制御され、同時に融液のタレ、
溶融帯での破断が防止され、極めて安定な結晶育
成が可能となつた。しかも結晶径が変動すると、
色ムラや気泡を生じ易くなる為、品質的に問題で
あつたが、かかる欠点も除去され、極めて良質な
単結晶が得られた。又、反射防止板を取り付けな
い場合に比べて、コントローラ部の演算処理が軽
減され、安価なシステムで充分コントロールでき
る様になつた。更に、目視による監視では3〜5
台の処理がやつとであつたが、本発明によれば20
〜30台を同時に監視することが可能となり、単結
晶の低価格化に大きく貢献した。 Here, 61 is a raw material rod, 62 is a grown crystal, 63
is the melting zone. Now, if the crystal diameter measurement part is A-A' (a part 0.5 to 5 mm above the solid-liquid interface), the control accuracy of the crystal diameter was conventionally around 10 mm ±0.5 mm by visual inspection, but it is ±0.05 mm. At the same time, melt sag is controlled within
Breakage in the molten zone was prevented, making extremely stable crystal growth possible. Moreover, when the crystal diameter changes,
Although color unevenness and bubbles were likely to occur, which caused problems in terms of quality, these defects were eliminated and a single crystal of extremely high quality was obtained. Furthermore, compared to the case where no antireflection plate is attached, the calculation processing of the controller section is reduced, and it is now possible to perform sufficient control with an inexpensive system. Furthermore, visual monitoring shows 3 to 5
The processing of the stand was difficult, but according to the present invention, 20
It became possible to monitor up to 30 units at the same time, making a major contribution to lowering the price of single crystals.
本実施例においては、回転楕円面鏡内の一部を
無反射状態とする手段として、反射防止板を取り
付ける場合を例にあげて説明したが、同部位を梨
地にする等の方法をとつた場合も、同様の効果を
示した。又カメラ部にラインセンサを用いた場合
を図示して説明したがエリアセンサを用いた場合
も同様の効果を示した。 In this embodiment, an example was explained in which an anti-reflection plate was attached as a means to make a part of the spheroidal mirror non-reflective, but it is also possible to use a method such as making the same part matte. The case also showed similar effects. Furthermore, although the case where a line sensor is used in the camera section has been illustrated and explained, similar effects were also shown when an area sensor was used.
以上詳述した如く本発明によれば、ルビー、サ
フアイア、アレキサンドライト等の宝石用単結晶
は勿論、YIG,YAG,GGG等の工業用単結晶に
も応用され、良質で安価な単結晶を供給するもの
である。 As detailed above, the present invention can be applied not only to gemstone single crystals such as ruby, sapphire, and alexandrite, but also to industrial single crystals such as YIG, YAG, and GGG, and provides high-quality and inexpensive single crystals. It is something.
第1図はFZ法の概要を示す。第2図は本発明
に基づく製造システムのブロツク図を示す。第3
図は従来装置においてスクリーン上に映し出され
た像の状況を示す。第4図は本発明に基づく装置
の平面図を示す。第5図は本発明による結晶径測
定の様子を示す図である。
Figure 1 shows an overview of the FZ method. FIG. 2 shows a block diagram of a manufacturing system according to the invention. Third
The figure shows the situation of an image projected on a screen in a conventional device. FIG. 4 shows a plan view of the device according to the invention. FIG. 5 is a diagram showing how the crystal diameter is measured according to the present invention.
Claims (1)
を反射鏡またはレンズを用いて集光し、該集光部
において、原料棒と種結晶とを溶融帯を仲介とし
て結合してフローテイングゾーンを形成し、該フ
ローテイングゾーンを一定速度で移動することに
より、前記種結晶上に結晶を析出させるフローテ
イングゾーン法において、回転楕円面鏡内のスク
リーンと対向する部位を無反射状態とすることに
より、ランプ像を消去し、育成中の結晶と背部の
コントラスト比を高めた状態で、種結晶をセツト
したシヤフトから回転同期信号を取り出し、結晶
の所定部分の直径を光学的検出法を用いて測定
し、これを融液の温度、あるいは融液の高さにフ
イードバツクすることにより、育成結晶の直径を
制御することを特徴とする単結晶の製造方法。1. Light emitted from a high-temperature light source such as a halogen lamp is focused using a reflecting mirror or lens, and in the focusing section, a raw material rod and a seed crystal are combined via a molten zone to form a floating zone. In the floating zone method, in which crystals are deposited on the seed crystal by moving the floating zone at a constant speed, the lamp is With the image erased and the contrast ratio between the growing crystal and the back side increased, a rotation synchronization signal is extracted from the shaft on which the seed crystal is set, and the diameter of a predetermined portion of the crystal is measured using an optical detection method. A method for producing a single crystal, characterized in that the diameter of a grown crystal is controlled by feeding this back to the temperature of the melt or the height of the melt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18121183A JPS6071592A (en) | 1983-09-29 | 1983-09-29 | Manufacture of single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18121183A JPS6071592A (en) | 1983-09-29 | 1983-09-29 | Manufacture of single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6071592A JPS6071592A (en) | 1985-04-23 |
| JPH0534317B2 true JPH0534317B2 (en) | 1993-05-21 |
Family
ID=16096767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18121183A Granted JPS6071592A (en) | 1983-09-29 | 1983-09-29 | Manufacture of single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6071592A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010201371A (en) * | 2009-03-04 | 2010-09-16 | Taisei Corp | Melting detoxification apparatus for waste to be treated, and melting detoxification method using the same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60202678A (en) * | 1984-03-27 | 1985-10-14 | ニチデン機械株式会社 | Infrared ray concentrated heater |
| RU2656331C1 (en) * | 2017-10-17 | 2018-06-04 | федеральное государственное бюджетное образовательное учреждение высшего образования "Национальный исследовательский университет "МЭИ" (ФГБОУ ВО "НИУ "МЭИ") | Device for growing monocrystals |
-
1983
- 1983-09-29 JP JP18121183A patent/JPS6071592A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010201371A (en) * | 2009-03-04 | 2010-09-16 | Taisei Corp | Melting detoxification apparatus for waste to be treated, and melting detoxification method using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6071592A (en) | 1985-04-23 |
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