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JPH0324438B2 - - Google Patents
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JPH0324438B2 - - Google Patents

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Publication number
JPH0324438B2
JPH0324438B2 JP59190695A JP19069584A JPH0324438B2 JP H0324438 B2 JPH0324438 B2 JP H0324438B2 JP 59190695 A JP59190695 A JP 59190695A JP 19069584 A JP19069584 A JP 19069584A JP H0324438 B2 JPH0324438 B2 JP H0324438B2
Authority
JP
Japan
Prior art keywords
crystal
composition
raw material
molar ratio
fluctuation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59190695A
Other languages
Japanese (ja)
Other versions
JPS6168397A (en
Inventor
Sadao Matsumura
Kazuhiro Yamada
Tadao Komi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59190695A priority Critical patent/JPS6168397A/en
Publication of JPS6168397A publication Critical patent/JPS6168397A/en
Publication of JPH0324438B2 publication Critical patent/JPH0324438B2/ja
Granted legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/30Niobates; Vanadates; Tantalates

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

〔発明の技術分野〕 この発明は弾性表面波(以下SAWと略称す)
素子用基板として有用なタンタル酸リチウム単結
晶の製造方法に関するもので、特に結晶基板の組
成変動がデバイス歩留りに敏感に影響する狭帯域
のSAWフイルターやSAW共振子用基板として使
用するタンタル酸リチウム(以下LTと略称す)
単結晶の製造方法に関する。 〔発明の技術的背景とその問題点〕 LT単結晶製造方法としては、通常チヨクラル
スキー法すなわち、るつぼ内に原料を充填し、加
熱溶融し、種子結晶を用いて回転しながら引上げ
る方法により製造されている。この場合の原料組
成として第1図に示すような結晶工学的に融液組
成と結晶組成が一致すると定義されるコングルエ
ント組成を用いるのが良い、と一般によく知られ
ている。しかし真のコングルエント組成を±1%
以下で正確に決定することは困難なことである。
特に化学的に安定なLTの場合、Li2OとTa2O5
分解して精度よく化学分析することが難しく、従
来多くの研究者は原料調合組成より推定してLT
のコングルエント組成はLi/Taモル比で0.95〜
0.96の間にあると報告してきた(R.L.Barns&J.
R.Carruthers:J.Appl Cryst.(1970)395)
(宮沢;通研実化報告21(1972)1742)。従つてこ
れまでのLT単結晶製造では上記モル組成とした
原料を用いて行つてきた。しかし製造した単結晶
基板を用いてSAWデバイス化した時のデバイス
製造歩留りに大きなばらつきがあることが問題と
なつていた。特に結晶組成がSAW特性に敏感な
影響をもたらす狭帯域のSAWフイルターやSAW
共振子のようなデバイスにおける製造歩留りが著
しく変動していた。すなわち、LT単結晶製造の
場合、上記モル組成比のLT結晶粉末を成長用貴
金属るつぼに所定重量充填し、通常の回転引上げ
法により結晶成長を行い、次回引上げではるつぼ
残留原料に、前回引上げ成長した結晶重量分のみ
焼結粉末又は成長結晶塊を充填して再度引上げ成
長を行つている。そのため原料組成が真のコング
ルエント組成と異なつている場合、連続引上げ回
数の増加に伴つて結晶組成は除々に変化してい
き、結晶ロツト内、ロツト間のSAW特性変動が
大きくなり、デバイス製造歩留りの低下をもたら
すものと考えられる。このような変動を小さくす
る便宜的な方法としては、連続引上げ回数を数回
に限定したり、固化率すなわちチヤージ重量に対
する引上げ結晶重量の割合を小さくする、等が考
えられる。しかしこれらの方法は単結晶製造の生
産性を悪くするのみならず、るつぼ寿命の低下、
耐火物保温材等の炉部材の使用量増大をもたらす
ので好しくない。 〔発明の目的〕 この発明は、上述の問題点に基づいてなされた
もので、結晶ロツト内、ロツト間の組成変動を小
さくして、所定の結晶組成のLT単結晶を再現性
よく製造する方法を提供することを目的とする。 〔発明の概要〕 発明者らは発明を完成する過程でまず、結晶組
成と結晶キユリー温度(以下Tcと略称す)とが、
コングルエント組成近傍では、1対1対対応する
と仮定し、初期融液組成(二焼結原料組成)と各
引上げ結晶中のTc変動の相関性を詳細に検討し
た。その結果から真のコングルエント組成をLi/
Taモル比で0.9342と推定し、さらに単結晶製造
工程での変動実績を加味して、最終的に原料組成
比として0.937±0.004となつているLT粉末ある
いは単結晶塊等の単結晶成長用原料を用いること
により、結晶組成の変動幅が少なくなることを見
出し本発明を完成した。すなわち本発明によれば
結晶組成の変動幅が結晶ロツト内、ロツト間のい
づれにおいても、Li/Taモル比で0・935±
0.006と従来の変動幅(0.948±0.01)の約1/2
以下になり、LT単結晶を再現性よく製造するこ
とができる。 次に上記内容について詳細に説明する。 今コングルエント組成Li2Oモル濃度をCcとし、
初期融液組成(二焼結原料組成)Li2Oモル濃度
をCpとし同融液中のコングルエント組成より過剰
なLi2Oモル濃度をCp′とし、第1回目引上げの固
化率gの結晶尾部の結晶組成Li2Oモル濃度をCs
()とし同じく過剰なLi2O濃度をCs′(),
Li2O/LiTaO3偏析係数をKとすれば、結晶組成
変動理論式より以下の関係式が成り立つ。 Cs′()=K×Cp′()×(1−g)K-1×{(
1−g)K×(I-1)+(1−g)K×(I-2) ×g+…+(1−g)K×g+g} …(1) Cs()=Cc×(1−Cs′())+Cs′()…(2
) 一方結晶組成Cs()と同キユリー温度Tc()
の間に(3)式のような Cs()=K2×Tc()+K3 …(3) 一次式が成り立つと仮定すれば、(1),(2),(3)式よ
り Tc(2)−Tc(1)=A×{Cp−Cc} …(4) Tc(1)=B×{Cp−Cc}+Tcp …(5) となる。ここでA,B,Tcpはそれぞれ次のよう
な式で表わされる。 A=K/K2×(1−g)K-1 ×{(1−g)K−(1−G)} …(6) B=K/K2×(1−g)K-1 …(7) Tcp=Cc−K3/K2 …(8) 原料組成をかえて、作成した結晶尾部(g=
0.5一定する)のキユリー温度を測定し、第1回
目と第2回目引上げの結晶尾部Tcの差Tc(2)−Tc
(1)と原料組成Cpの相関性を第2図にプロツトし
た。又Tc(1)とCpの相関性を第3図にプロツトし
た。第2図、第3図より明らかなように、(4),(5)
式で予測されるTc(2)−Tc(1)∝Cp,Tc(1)∝Cpの比
例関係がほぼ成立している。この図より真のコン
グルエント組成Li2Oモル濃度0.4830(Li/Taモル
比で0.9342)が推定された。又第2図、第3図の
直線傾きを用いて(6),(7),(8)式を連立して解くこ
とにより(3)式のK2,K3が各々4.2725×10-4
0.22464と得られ、コングルエント組成近傍での
CsとTcの関係として第4図に示すような相関性
が得られた。従つて理論的にはLi/Taモル比
0.9342の原料組成を用いれば良いことになるが、
実際上は結晶引上げ中のLi2O飛散があるので、
各種条件での実験より原料組成としてはLi/Ta
モル比で0・937±0.004以内におさえれば結晶組
成変動がもつとも小さくなることが判明した。第
6図はその実験結果を示す。 〔発明の効果〕 この発明により結晶組成変動がLi/Taモル比
で0.935±0.006以内で安定化するので、該単結晶
基板を用いたSAWデバイス特に結晶組成変動が
SAW特性変動に敏感に影響する狭帯域のSAWフ
イルターやSAW共振子の製造歩留りが著しく向
上する。更に従来結晶組成が変動していたのに対
してデバイス製造の前に先行テストを実施し各結
晶ロツトの表面波速度を評価し、それに対応し
て、あらかじめ用意した数種類のマスクを選択し
て使用していたが、この発明により結晶組成変動
幅が小さくなり、表面波速度の変動が±0.5m/
s以内になつたので上記の先行テスト評価が必要
でなく、工程簡略化が可能になると共に、マスク
の削減が可能となりデバイス製造工程の生産性が
大幅に向上する。 実施例 1 焼結原料組成としてLi/Taモル比が0.941にな
るように、炭酸リチウムと5酸化タンタルと所定
量結合、混合し1550℃で加熱焼成した粉末原料を
白金ロジユームからなるるつぼに13Kg充填し、通
常の高周波加熱方式のチヨクラルスキー法により
直径100mm長さ90mmのX軸結晶6.5Kgを作成し、2
回目は上記焼結原料6.5Kgをるつぼに追加チヤー
ジし、同様の結晶6.5Kgを引上げ作成し、以後同
様の追加チヤージ方式により連続12本作成した。
作成した結晶を通常の方法で基板加工し、各結晶
の頭部尾部ウエハについて各5点Tc分布測定を
行つた。その結果を表1にまとめて示す。表1に
比較のために従来の焼結組成Li/Ta=0.955の原
料を用いた場合の同様の各結晶中のTc分布測定
データを合せ示す。表1より明らかなように
0.955組成比の原料を用いた場合、結晶ロツト内、
ロツト間のTc変動は最大12.0℃であるのに対し、
この発明に基づいた0.941組成比の原料を用いた
場合、Tc変動は最大で3.0℃と約1/4も変動幅
が少なくなつていた。表面波速度とTcの関係は
経験的に第5図に示すような相関性が得られてお
り、この図によれば、結晶ロツト内、ロツト間の
Tc変動±1.5℃では表面波速度変動幅は±0.5m/
s以内になり、実際にSAW共振子例えばVTR用
91.25MH2のRFモジユレータを1種類のマスクで
試作した所、0.941モル比の原料を用いた表1の
シリーズ1の結晶12本の場合Total歩留りは93.5
%であつたのに対し、シリーズ2の結晶9本の場
合同一マスクでは所定の共振周波数のものがとれ
ないロツトが続出し、結局4種のマスクを先行テ
ストで選定して使用し尚かつTotal歩留りは88.3
%であつた。 又表1で明らかなようにシリーズ2では引上げ
回数と共に組成変動幅は大きくなり、10回以上で
は結晶にクラツクが発生してしまうのに対し、シ
リーズ1で12回引上げても組成変動幅は1回目と
ほとんどかわつておらず、クラツクも発生してい
ない。
[Technical field of the invention] This invention relates to surface acoustic waves (hereinafter abbreviated as SAW).
This article relates to the manufacturing method of lithium tantalate single crystal, which is useful as a device substrate. In particular, lithium tantalate (lithium tantalate), which is used as a substrate for narrow-band SAW filters and SAW resonators, where compositional fluctuations in the crystal substrate have a sensitive effect on device yield. (hereinafter abbreviated as LT)
This invention relates to a method for producing a single crystal. [Technical background of the invention and its problems] The LT single crystal manufacturing method is usually the Czyochralski method, which is a method in which raw materials are filled in a crucible, heated and melted, and pulled up while rotating using a seed crystal. Manufactured. It is generally well known that as the raw material composition in this case, it is better to use a congruent composition, which is defined in terms of crystal engineering so that the melt composition and crystal composition match, as shown in FIG. 1. However, the true congruent composition is ±1%
It is difficult to determine exactly what follows.
In particular, in the case of chemically stable LT, it is difficult to decompose it into Li 2 O and Ta 2 O 5 and conduct chemical analysis with high precision, and in the past, many researchers estimated LT from the raw material composition.
The congruent composition of Li/Ta molar ratio is 0.95~
have reported that it is between 0.96 (RLBarns & J.
R.Carruthers: J.Appl Cryst. 3 (1970) 395)
(Miyazawa; Tsuken Practical Report 21 (1972) 1742). Therefore, LT single crystal production to date has been carried out using raw materials having the above molar composition. However, there has been a problem in that there are large variations in device manufacturing yield when SAW devices are fabricated using the manufactured single crystal substrates. In particular, narrowband SAW filters and SAWs whose crystal composition has a sensitive effect on SAW characteristics.
Manufacturing yields for devices such as resonators have varied significantly. In other words, in the case of LT single crystal production, a predetermined weight of LT crystal powder with the above molar composition ratio is filled into a noble metal growth crucible, and crystal growth is performed using the normal rotational pulling method. The sintered powder or grown crystal mass is filled with the weight of the crystal, and the pulling growth is performed again. Therefore, if the raw material composition differs from the true congruent composition, the crystal composition will gradually change as the number of consecutive pulls increases, and the SAW characteristics fluctuations within and between crystal lots will increase, which will reduce the device manufacturing yield. This is thought to cause a decline in Convenient methods for reducing such fluctuations include limiting the number of consecutive pullings to a few times, and reducing the solidification rate, that is, the ratio of the pulled crystal weight to the charge weight. However, these methods not only reduce the productivity of single crystal production, but also reduce the life of the crucible.
This is not preferable because it increases the amount of furnace components such as refractory heat insulators used. [Object of the Invention] The present invention has been made based on the above-mentioned problems, and provides a method for manufacturing LT single crystals with a predetermined crystal composition with good reproducibility by reducing compositional fluctuations within and between crystal lots. The purpose is to provide [Summary of the Invention] In the process of completing the invention, the inventors first determined that the crystal composition and the crystal Curie temperature (hereinafter abbreviated as Tc ) were
Assuming that there is a one-to-one correspondence near the congruent composition, we investigated in detail the correlation between the initial melt composition (secondary sintering raw material composition) and T c fluctuation in each pulled crystal. From the results, the true congruent composition can be determined by Li/
The Ta molar ratio is estimated to be 0.9342, and the raw material composition ratio is finally 0.937±0.004, taking into account the actual fluctuations in the single crystal manufacturing process. Raw materials for single crystal growth such as LT powder or single crystal lumps. The present invention was completed based on the discovery that the range of variation in crystal composition can be reduced by using the above method. In other words, according to the present invention, the fluctuation range of the crystal composition is within 0.935± in Li/Ta molar ratio both within a crystal lot and between crystal lots.
0.006, about 1/2 of the conventional fluctuation range (0.948±0.01)
As shown below, LT single crystals can be produced with good reproducibility. Next, the above content will be explained in detail. Now let the congruent composition Li 2 O molar concentration be C c ,
The initial melt composition (secondary sintering raw material composition) Li 2 O molar concentration is C p and the excess Li 2 O molar concentration than the congruent composition in the same melt is C p ′, and the solidification rate g of the first pulling is Crystal composition Li 2 O molar concentration of crystal tail C s
() and the excess Li 2 O concentration as C s ′(),
If the Li 2 O/LiTaO 3 segregation coefficient is K, the following relational expression holds true from the crystal composition variation theoretical expression. C s ′()=K×C p ′()×(1-g) K-1 ×{(
1-g) K×(I-1) +(1-g) K×(I-2) ×g+…+(1-g) K ×g+g}…(1) C s ()=C c ×( 1−C s ′())+C s ′()…(2
) while the crystal composition C s () and the same Killie temperature T c ()
Assuming that a linear equation like equation (3) holds between C s () = K 2 ×T c () + K 3 …(3), then from equations (1), (2), and (3), T c (2)−T c (1)=A×{C p −C c }…(4) T c (1)=B×{C p −C c }+T cp …(5). Here, A, B, and T cp are each expressed by the following formulas. A=K/K 2 × (1-g) K-1 × {(1-g) K − (1-G)} …(6) B=K/K 2 × (1-g) K-1 … (7) T cp = C c − K 3 /K 2 …(8) Crystal tail (g =
0.5) is measured, and the difference between the crystal tail T c of the first and second pulling is T c (2) − T c
The correlation between (1) and the raw material composition Cp is plotted in Figure 2. In addition, the correlation between T c (1) and C p is plotted in Figure 3. As is clear from Figures 2 and 3, (4), (5)
The proportional relationship of T c (2)−T c (1)∝C p and T c (1)∝C p predicted by the formula is almost established. From this figure, the true congruent composition Li 2 O molar concentration was estimated to be 0.4830 (Li/Ta molar ratio 0.9342). Also, by solving equations (6), (7), and (8) simultaneously using the linear slopes in Figures 2 and 3, K 2 and K 3 in equation (3) are each 4.2725×10 -4
0.22464, near the congruent composition.
A correlation as shown in FIG. 4 was obtained as the relationship between C s and T c . Therefore, theoretically, the Li/Ta molar ratio
It would be fine to use a raw material composition of 0.9342, but
In reality, there is Li 2 O scattering during crystal pulling, so
From experiments under various conditions, the raw material composition was determined to be Li/Ta.
It has been found that if the molar ratio is kept within 0.937±0.004, the fluctuation in crystal composition becomes smaller. FIG. 6 shows the experimental results. [Effects of the Invention] This invention stabilizes crystal composition fluctuation within 0.935±0.006 in terms of Li/Ta molar ratio.
The manufacturing yield of narrowband SAW filters and SAW resonators, which are sensitive to SAW characteristic fluctuations, is significantly improved. Furthermore, whereas conventional crystal compositions varied, we conducted preliminary tests before device manufacturing to evaluate the surface wave velocity of each crystal lot, and accordingly selected and used several types of masks prepared in advance. However, with this invention, the crystal composition fluctuation width has been reduced, and the surface wave velocity fluctuation has been reduced to ±0.5 m/
s or less, the above-mentioned preliminary test evaluation is not necessary, and the process can be simplified and the number of masks can be reduced, which greatly improves the productivity of the device manufacturing process. Example 1 A predetermined amount of lithium carbonate and tantalum pentoxide were combined and mixed together so that the Li/Ta molar ratio was 0.941 as the sintering raw material composition, and 13 kg of the powder raw material was heated and calcined at 1550°C, and 13 kg was filled into a crucible made of platinum rhodium. Then, a 6.5 kg X-axis crystal with a diameter of 100 mm and a length of 90 mm was created using the Czyochralski method, which is a normal high-frequency heating method.
For the second time, 6.5 kg of the above-mentioned sintering raw material was additionally charged into the crucible, and 6.5 kg of the same crystal was pulled up and produced, and thereafter 12 crystals were continuously produced using the same additional charging method.
The produced crystals were subjected to substrate processing in a conventional manner, and the T c distribution was measured at five points on each crystal head and tail wafer. The results are summarized in Table 1. For comparison, Table 1 also shows measurement data of T c distribution in each crystal using a conventional raw material with a sintering composition of Li/Ta = 0.955. As is clear from Table 1
When using raw materials with a composition ratio of 0.955, inside the crystal lot,
While the T c variation between lots is a maximum of 12.0°C,
When the raw material with a composition ratio of 0.941 based on this invention was used, the maximum T c fluctuation was 3.0°C, which was about 1/4 smaller. The relationship between the surface wave velocity and T c has been empirically obtained as shown in Figure 5. According to this figure, the relationship between the surface wave velocity and Tc is
When the T c fluctuation is ±1.5℃, the surface wave velocity fluctuation width is ±0.5m/
Within s, it is actually used for SAW resonators such as VTRs.
When a 91.25MH 2 RF modulator was prototyped using one type of mask, the total yield was 93.5 in the case of 12 crystals of series 1 in Table 1 using raw materials with a molar ratio of 0.941.
%, but in the case of 9 series 2 crystals, there were many lots where the same mask could not achieve the specified resonant frequency, and in the end, 4 types of masks were selected and used in preliminary tests, and the total Yield is 88.3
It was %. Furthermore, as is clear from Table 1, in Series 2, the range of composition fluctuation increases with the number of times of pulling, and cracks occur in the crystal if the number of pulls exceeds 10, whereas in Series 1, even after 12 times of pulling, the range of composition fluctuation increases by 1. It was almost the same as the previous time, and no cracks occurred.

【表】【table】

【表】 実施例 2 焼結原料組成として0.933のモル比を用いて実
施例1と同様の方法で結晶作成を10回連続して行
つた。その時の各結晶のTc分布を表2にまとめ
て示した。比較のため0.931モル比の原料使用の
場合(シリーズ4)の結果も合せ示す。0.931の
場合は引上げ回数と共に結晶尾部Tcは低下の方
向に変動し、ロツト内、ロツト間の最大8.5℃Tc
変動が見られるのに対し、0.933モル比の原料の
場合若干同様の傾向が見られるが最大変動幅は
3.0℃であつた。0.933モル比はほぼコングルエン
ト組成であるにもかかわらず、若干Tc低下の傾
向が見られるのは、結晶引上げ中のLi2O飛散が
原因と考えられる。
[Table] Example 2 Crystal preparation was performed 10 times in a row in the same manner as in Example 1 using a molar ratio of 0.933 as the sintering raw material composition. The T c distribution of each crystal at that time is summarized in Table 2. For comparison, the results in the case of using raw materials at a molar ratio of 0.931 (Series 4) are also shown. In the case of 0.931, the crystal tail T c fluctuates in the direction of decrease with the number of pulling, and the maximum T c within a lot and between lots is 8.5℃.
In contrast, in the case of raw materials with a molar ratio of 0.933, a slightly similar trend is observed, but the maximum fluctuation range is
It was 3.0℃. Even though the 0.933 molar ratio is almost a congruent composition, there is a slight tendency for T c to decrease, which is thought to be due to Li 2 O scattering during crystal pulling.

【表】 実施例 3 焼結原料組成をLi/Taモル比で0.9175,
0.9225,0.931,0.933,0.937,0.939,0.941,
0.945,0.950,0.955と変えて、実施例1と同様の
結晶作成実験を各連続9回引上げて行つた時の各
シリーズでのTc最大変動幅を焼結原料組成でプ
ロツトすると第6図の結果が得られた。図より
Tc最大変動幅3℃以内にするためには(二表面
波速度を±0.5m/s以内)、原料組成として0.933
〜0.941の間に設定するのが良いことが明らかで
ある。 以上の実施例では原料としてすべて焼結粉末を
用いているが、上記モル比にあるLiTaO3原料例
えば、上記方法で引上げ作成した結晶のクラツク
品あるいはSAWデバイス化プロセスで出るウエ
ハ品の回収したものでも良いことは当然である。 以上の実施例の結果から明らかなようにこの発
明によれば連続引上げ回数を10回以上行つても組
成変動が少なく、結晶も割れないので単結晶製造
の生産性も大幅に向上した。
[Table] Example 3 Sintering raw material composition is Li/Ta molar ratio of 0.9175,
0.9225, 0.931, 0.933, 0.937, 0.939, 0.941,
When the same crystal formation experiment as in Example 1 was carried out 9 times in a row with different values of 0.945, 0.950, and 0.955, the maximum fluctuation range of T c in each series was plotted against the sintering raw material composition, as shown in Figure 6. The results were obtained. From the diagram
In order to keep the T c maximum fluctuation width within 3℃ (two-surface wave velocity within ±0.5m/s), the raw material composition must be 0.933
It is clear that setting between ~0.941 is good. All of the above examples use sintered powder as the raw material, but the LiTaO 3 raw material with the above molar ratio may be, for example, a cracked crystal product pulled by the above method or a wafer product recovered from the SAW device manufacturing process. But of course it's a good thing. As is clear from the results of the above examples, according to the present invention, even if continuous pulling is performed 10 times or more, there is little compositional variation and the crystal does not crack, so the productivity of single crystal production has been greatly improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はLi2O−Ta2O5二元系の相関図、第2
図、第3図は実験的に得られた△Tc=Tc(2)−Tc
(1)∝CpとTc∝Cpの相関図、第4図は結晶組成と
結晶キユリー温度の相関図、第5図は実験的に求
めた結晶キユリー温度と表面波速度の相関図、第
6図は原料組成Li/Taモル比と結晶内Tc変動最
大幅の相関図である。
Figure 1 is a correlation diagram of Li 2 O−Ta 2 O 5 binary system, Figure 2
Figure 3 shows the experimentally obtained △T c = T c (2)−T c
(1) Correlation diagram between ∝C p and T c ∝C p , Figure 4 is a correlation diagram between crystal composition and crystal Killie temperature, Figure 5 is a correlation diagram between experimentally determined crystal Killie temperature and surface wave velocity, FIG. 6 is a correlation diagram between the raw material composition Li/Ta molar ratio and the maximum width of intracrystal T c variation.

Claims (1)

【特許請求の範囲】[Claims] 1 引上げ法によりタンタル酸リチウム単結晶を
成長させるに際し、タンタル酸リチウム単結晶成
長用原料として、Li/Taモル比が0.937±0.004と
なつているタンタル酸リチウム単結晶成長用原料
を用いることを特徴とするタンタル酸リチウム単
結晶の製造方法。
1. When growing a lithium tantalate single crystal by the pulling method, a lithium tantalate single crystal growth raw material with a Li/Ta molar ratio of 0.937±0.004 is used as a raw material for lithium tantalate single crystal growth. A method for producing lithium tantalate single crystal.
JP59190695A 1984-09-13 1984-09-13 Method for producing lithium tantalate single crystal Granted JPS6168397A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59190695A JPS6168397A (en) 1984-09-13 1984-09-13 Method for producing lithium tantalate single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59190695A JPS6168397A (en) 1984-09-13 1984-09-13 Method for producing lithium tantalate single crystal

Publications (2)

Publication Number Publication Date
JPS6168397A JPS6168397A (en) 1986-04-08
JPH0324438B2 true JPH0324438B2 (en) 1991-04-03

Family

ID=16262316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59190695A Granted JPS6168397A (en) 1984-09-13 1984-09-13 Method for producing lithium tantalate single crystal

Country Status (1)

Country Link
JP (1) JPS6168397A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63265896A (en) * 1987-04-24 1988-11-02 Hitachi Metals Ltd Production of lithium tantalate single crystal
JP2021155246A (en) * 2020-03-26 2021-10-07 住友金属鉱山株式会社 Lithium niobate single crystal and method for manufacturing the same

Also Published As

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JPS6168397A (en) 1986-04-08

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