JPH0375924B2 - - Google Patents
Info
- Publication number
- JPH0375924B2 JPH0375924B2 JP6111682A JP6111682A JPH0375924B2 JP H0375924 B2 JPH0375924 B2 JP H0375924B2 JP 6111682 A JP6111682 A JP 6111682A JP 6111682 A JP6111682 A JP 6111682A JP H0375924 B2 JPH0375924 B2 JP H0375924B2
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- magnetic head
- film
- electrode
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 32
- 239000004020 conductor Substances 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 14
- 230000001681 protective effect Effects 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 238000005323 electroforming Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
Landscapes
- Magnetic Heads (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
Description
【発明の詳細な説明】
発明の対象
本発明は、薄膜磁気ヘツドの電極製造方法に係
り、特に薄膜磁気ヘツドの形成時と同時に形成さ
れる電極の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Object of the Invention The present invention relates to a method for manufacturing an electrode for a thin film magnetic head, and more particularly to a method for manufacturing an electrode that is formed simultaneously with the formation of a thin film magnetic head.
従来技術
一般に薄膜技術により形成される薄膜磁気ヘツ
ドは、第1図に示す如く、基体であるウエハー1
と該ウエハー1上に設けられる磁気ヘツド素子1
0と電極20とから構成されている。前記電極2
0は、磁気ヘツド素子10の形成時と同時に薄膜
技術により形成され、外部の端子間と導通を行な
うためのものである。Prior Art A thin film magnetic head, which is generally formed by thin film technology, has a wafer 1 as a base, as shown in FIG.
and a magnetic head element 1 provided on the wafer 1.
0 and an electrode 20. Said electrode 2
0 is formed by thin film technology at the same time as the formation of the magnetic head element 10, and is for conducting between external terminals.
従来技術による前記電極20の製造方法を第2
図を用いて説明する。第2図a乃至cは従来技術
による電極の製造工程を示す電極の断面図であ
る。この製造方法は、まず第1図aに示如くウエ
ハー1上に磁気ヘツド素子からの電極引出し用導
体2を形成する。次にエレクトロフオーミングの
際に使用する酸性またはアルカリ性の薬品から、
磁気ヘツド素子を保護するため第1保護膜3を形
成する。次にエレクトロフオーミングの際の通電
用下地となる銅膜4を真空蒸着またはスパツタリ
ング法で形成した後、フオトレジスト5を2〜
10μmの膜厚に形成し、所定の寸法にパターンニ
ングする。次に安定して厚膜が得られる銅または
ニツケルめつき液を用い20〜40μm膜厚の金属導
体6をエレクトロフオーミング法により形成す
る。この場合、導体6の膜厚がフオトレジスト5
の膜厚と同程度の数値までは、導体6の形状は、
フオトレジスト5のパターンニング形状にならつ
て形成される。しかし導体6の膜厚がフオトレジ
スト5の膜厚より厚く形成される場合、導体6の
析出は、膜厚方向だけでなく電気めつきの特徴と
して、膜厚方向と垂直に横方向へも導体6の析出
が第1図aに示す如く起る。この横方向への析出
は、膜厚方向の析出とほぼ1:1で進行し、20〜
40μmの導体6をエレクトロフオーミング法で形
成した場合には、10〜30μmのオーバーハングが
生じることになる。フオトレジスト5を除去した
際、オーバーハング部の下には、フオトレジスト
膜厚相当の隙間が生じることになる。第1図bに
示す様にその後に真空蒸着またはスパツタリング
法によつて無機保護膜7を形成した場合オーバー
ハング部下の隙間を埋めることができず、導体6
の周囲の無機保護膜7に空洞8およびクレバス9
が生じる。この欠陥は、第1図cに示す様に無機
保護膜7の表面を機械加工して導体6を露出させ
た場合に、電極部の周囲に現われ耐食性の面から
信頼性の低下を招く原因となつている。 A second method of manufacturing the electrode 20 according to the conventional technology
This will be explained using figures. FIGS. 2a to 2c are cross-sectional views of an electrode showing the manufacturing process of the electrode according to the prior art. In this manufacturing method, first, as shown in FIG. 1A, a conductor 2 for leading out an electrode from a magnetic head element is formed on a wafer 1. Next, from the acidic or alkaline chemicals used during electroforming,
A first protective film 3 is formed to protect the magnetic head element. Next, after forming a copper film 4, which will serve as a base for current conduction during electroforming, by vacuum evaporation or sputtering, a photoresist 5 of 2 to
A film is formed to a thickness of 10 μm and patterned to a predetermined size. Next, a metal conductor 6 having a thickness of 20 to 40 μm is formed by electroforming using a copper or nickel plating solution that can stably form a thick film. In this case, the film thickness of the conductor 6 is the same as that of the photoresist 5.
Up to a value similar to the film thickness of , the shape of the conductor 6 is as follows.
It is formed to follow the patterning shape of the photoresist 5. However, when the film thickness of the conductor 6 is formed to be thicker than that of the photoresist 5, the conductor 6 is deposited not only in the film thickness direction but also in the lateral direction perpendicular to the film thickness direction, which is a characteristic of electroplating. Precipitation occurs as shown in Figure 1a. This lateral precipitation progresses at a ratio of approximately 1:1 to the precipitation in the film thickness direction, and
If the 40 μm conductor 6 is formed by electroforming, an overhang of 10 to 30 μm will occur. When the photoresist 5 is removed, a gap equivalent to the thickness of the photoresist film will be created under the overhang portion. As shown in FIG. 1b, if an inorganic protective film 7 is subsequently formed by vacuum evaporation or sputtering, the gap under the overhang cannot be filled, and the conductor 6
Cavities 8 and crevasses 9 are formed in the inorganic protective film 7 around the
occurs. This defect appears around the electrode section when the surface of the inorganic protective film 7 is machined to expose the conductor 6 as shown in Figure 1c, and is the cause of a decrease in reliability from the perspective of corrosion resistance. It's summery.
この様に従来技術による薄膜磁気ヘツドの電極
製造方法は、耐食性の面から信頼性の低下を招く
と言う問題点を有している。 As described above, the conventional method for manufacturing thin film magnetic head electrodes has the problem of lowering reliability in terms of corrosion resistance.
発明の目的
本発明の目的は、上述の従来技術による問題点
を除去することであり、空洞あるいはクレバスの
発生を防止し、耐食性の優れた薄膜磁気ヘツドの
電極の製造方法を提供することである。OBJECTS OF THE INVENTION An object of the present invention is to eliminate the problems caused by the above-mentioned prior art, and to provide a method for manufacturing thin film magnetic head electrodes that prevents the formation of cavities or crevasses and has excellent corrosion resistance. .
発明の総括的説明
上述の目的を達成するため本発明にあつてはエ
レクトロフオーミング法で形成した導体膜のオー
バーハング部分を、テーパーエツチングを行なう
ことによりオーバーハング部分を除去した後に保
護膜を形成することを特徴とする。General Description of the Invention In order to achieve the above-mentioned object, the present invention involves forming a protective film after removing the overhanging part of the conductive film formed by electroforming by performing taper etching. It is characterized by
発明の実施例
以下本発明の一実施例である電極の製造方法を
第3図a乃至dを用いて説明する。Embodiment of the Invention A method of manufacturing an electrode according to an embodiment of the invention will be described below with reference to FIGS. 3a to 3d.
本実施例による製造方法は、第3図aに示すよ
うに、導体6形成までは、従来技術による電極部
形成法と同様に実施する。ウエハー1の上に、電
極引出し用導体2、第1保護膜3、通電用下地膜
4およびフオトレジスト5を所定の寸法に形成す
る。その後、厚膜化容易なエレクトロフオーミン
グ法、例えば、硫酸銅220g/、硫酸775g/
からなる硫酸銅めつき液を用い、銅導体6を形成
する。次に本発明の特徴となる導体6のテーパー
エツチングを行なうため、銅導体6の上に、エツ
チング用フオトレジスト10をパターンニングす
る。この際、フオトレジスト5は、除去せずに残
し、エツチング液から磁気ヘツド素子を保護する
働きを持たせる。次に塩素酸塩あるいは過硫酸塩
のアルカリ性エツチング溶液を用い、浸漬法ある
いは電解法により銅導体1をエツチングする。こ
の場合、第1保護膜3のパターンニング寸法と、
フオトレジスト5のパターンニング寸法との差が
大きいほどエツチングが容易となる。銅導体6が
エツチングされ、フオトレジスト5の端部が露出
または通電用下地膜4の銅が溶解する時間をエツ
チング終点とする。これにより第3図bに示す様
に銅導体6のオーバーハング部は完全に除去され
かつ銅導体6の端部を30〜40度の傾斜角にエツチ
ングすることができる。本実施例のような構造を
有する薄膜磁気ヘツド電極部の導体6を形成した
場合、フオトレジスト5、エツチング用フオトレ
ジスト10を除去した後に、第3図cに示す様に
形成する無機保護膜7は、導体6の傾斜角が40度
以下の場合、充分なステツプカバレージを有し、
欠陥のない膜を形成することができる。この無機
保護膜7の表面を第3図dに示す様に機械加工し
ても、空洞およびクレバスの欠陥が生じないた
め、耐食性の良い電極部を形成することができ
る。 The manufacturing method according to this embodiment, as shown in FIG. 3a, is carried out in the same manner as the electrode part forming method according to the prior art up to the formation of the conductor 6. On the wafer 1, a conductor 2 for leading out an electrode, a first protective film 3, a base film 4 for current conduction, and a photoresist 5 are formed to have predetermined dimensions. After that, the electroforming method, which is easy to thicken the film, is used, for example, copper sulfate 220g/, sulfuric acid 775g/
A copper conductor 6 is formed using a copper sulfate plating solution consisting of: Next, in order to perform taper etching of the conductor 6, which is a feature of the present invention, a photoresist 10 for etching is patterned on the copper conductor 6. At this time, the photoresist 5 is left without being removed and has the function of protecting the magnetic head element from the etching solution. Next, the copper conductor 1 is etched using an alkaline etching solution of chlorate or persulfate by dipping or electrolysis. In this case, the patterning dimensions of the first protective film 3,
The larger the difference from the patterning dimension of the photoresist 5, the easier the etching becomes. The etching end point is the time when the copper conductor 6 is etched and the end of the photoresist 5 is exposed or the copper of the current-carrying base film 4 is dissolved. As a result, as shown in FIG. 3b, the overhang portion of the copper conductor 6 is completely removed and the end portion of the copper conductor 6 can be etched at an angle of inclination of 30 to 40 degrees. When the conductor 6 of the thin film magnetic head electrode part having the structure of this embodiment is formed, after removing the photoresist 5 and the photoresist 10 for etching, an inorganic protective film 7 is formed as shown in FIG. 3c. has sufficient step coverage when the inclination angle of the conductor 6 is 40 degrees or less,
A defect-free film can be formed. Even when the surface of the inorganic protective film 7 is machined as shown in FIG. 3d, defects such as cavities and crevasses do not occur, so that an electrode portion with good corrosion resistance can be formed.
発明の効果
以上述べた様に薄膜磁気ヘツドの電極部の導体
膜をエレクトロフオーミングで形成後、その導体
膜のオーバーハング部だけを、テーパーエツチン
グすることを特徴とする本発明によればエツチン
グ面積が少なく、エツチングの際の磁気ヘツド素
子の腐食を防止できる。導体膜を30〜40度の傾斜
角にエツチングすることにより、空洞およびクレ
バス欠陥のない、保護膜を得ることができ、薄膜
磁気ヘツドの耐食性など信頼性の向上に効果があ
る。Effects of the Invention As described above, the present invention is characterized in that after forming the conductor film of the electrode part of the thin film magnetic head by electroforming, only the overhanging part of the conductor film is tapered etched. This prevents corrosion of the magnetic head element during etching. By etching the conductor film at an inclination angle of 30 to 40 degrees, a protective film free of cavities and crevasses can be obtained, which is effective in improving reliability such as corrosion resistance of thin film magnetic heads.
第1図は一般の薄膜磁気ヘツドの構造を示す図
であり、第2図a乃至cは、従来技術による製造
方法の製造工程をそれぞれ示す図、第3図a乃至
dは、本発明による電極の製造方法の製造工程を
それぞれ示す図である。
符号の説明 1…ウエハー、2…電極引出し用
導体、3…第1保護膜、4…通電用下地、5…フ
オトレジスト、6…導体、7…無機保護膜、8…
空洞、9…クレバス、10…エツチング用フオト
レジスト。
FIG. 1 is a diagram showing the structure of a general thin film magnetic head, FIGS. 2a to 2c are diagrams showing manufacturing steps of a conventional manufacturing method, and FIGS. 3a to d are diagrams showing electrodes according to the present invention. It is a figure which shows the manufacturing process of the manufacturing method, respectively. Explanation of symbols 1... Wafer, 2... Conductor for electrode extraction, 3... First protective film, 4... Base for current conduction, 5... Photoresist, 6... Conductor, 7... Inorganic protective film, 8...
Cavity, 9...crevasse, 10...photoresist for etching.
Claims (1)
を外部と連結する電極とを薄膜技術により基体上
に形成する薄膜磁気ヘツドの電極製造方法におい
て、エレクトロフオーミング法で形成した導体膜
のオーバハング部分を、テーパーエツチング法に
より除去した後に保護膜を形成することを特徴と
する薄膜磁気ヘツドの電極製造方法。1. In a method for manufacturing an electrode for a thin film magnetic head in which a magnetic head element and an electrode for connecting a signal of the magnetic head element to the outside are formed on a substrate by thin film technology, an overhanging portion of a conductor film formed by an electroforming method is A method for manufacturing an electrode for a thin film magnetic head, characterized in that a protective film is formed after removal by a taper etching method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6111682A JPS58179922A (en) | 1982-04-14 | 1982-04-14 | Production of electrode of thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6111682A JPS58179922A (en) | 1982-04-14 | 1982-04-14 | Production of electrode of thin film magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58179922A JPS58179922A (en) | 1983-10-21 |
| JPH0375924B2 true JPH0375924B2 (en) | 1991-12-03 |
Family
ID=13161779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6111682A Granted JPS58179922A (en) | 1982-04-14 | 1982-04-14 | Production of electrode of thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58179922A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2552189B2 (en) * | 1989-12-26 | 1996-11-06 | 富士通株式会社 | Method of manufacturing thin film magnetic head |
| JP4047252B2 (en) | 2003-06-09 | 2008-02-13 | アルプス電気株式会社 | Method for manufacturing thin film structure |
| US9218831B1 (en) * | 2014-09-17 | 2015-12-22 | HGST Netherlands B.V. | Side-by-side magnetic multi-input multi-output (MIMO) read head |
-
1982
- 1982-04-14 JP JP6111682A patent/JPS58179922A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58179922A (en) | 1983-10-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5059278A (en) | Selective chemical removal of coil seed-layer in thin film head magnetic transducer | |
| US3634203A (en) | Thin film metallization processes for microcircuits | |
| US4436593A (en) | Self-aligned pole tips | |
| US3935635A (en) | Method of producing a semiconductor arrangement | |
| US4239587A (en) | Method of manufacturing a thin-film magnetic head with a nickel-iron pattern having inclined edges | |
| US4402801A (en) | Method for manufacturing thin film magnetic head | |
| US3314869A (en) | Method of manufacturing multilayer microcircuitry including electropolishing to smooth film conductors | |
| US4856181A (en) | Method for manufacturing terminal contacts for thin-film magnetic heads | |
| US3623961A (en) | Method of providing an electric connection to a surface of an electronic device and device obtained by said method | |
| JPH0375924B2 (en) | ||
| US4456506A (en) | Superconducting circuit fabrication | |
| US4176016A (en) | Forming electrically insulating layers by sputter deposition | |
| US3836446A (en) | Semiconductor devices manufacture | |
| US3793175A (en) | Thin film circuits with interconnecting contacts | |
| US3785937A (en) | Thin film metallization process for microcircuits | |
| JPS628943B2 (en) | ||
| KR830000050B1 (en) | Thin film magnetic head | |
| JPS61174757A (en) | Capacitive element integrated on ic chip and manufacture thereof | |
| JPH11161916A (en) | Magnetic head manufacturing method | |
| JPS61211810A (en) | Electrode formation of thin film magnetic head | |
| JPH0560257B2 (en) | ||
| JP2673363B2 (en) | Circuit board and method of manufacturing the same | |
| JPS6261334A (en) | Pattern formation method | |
| JPS5910227A (en) | Semiconductor device | |
| JPS6137770B2 (en) |