JPS6137770B2 - - Google Patents
Info
- Publication number
- JPS6137770B2 JPS6137770B2 JP15008980A JP15008980A JPS6137770B2 JP S6137770 B2 JPS6137770 B2 JP S6137770B2 JP 15008980 A JP15008980 A JP 15008980A JP 15008980 A JP15008980 A JP 15008980A JP S6137770 B2 JPS6137770 B2 JP S6137770B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductor
- insulating layer
- pattern
- conductor pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 claims 4
- 238000000034 method Methods 0.000 claims 2
- 229910018182 Al—Cu Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Magnetic Films (AREA)
Description
【発明の詳細な説明】
本発明はプレーナータイプの２層導体電流駆動
方式の磁気バブル素子の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a planar type two-layer conductor current-driven magnetic bubble element.
従来の２層導体電流駆動方式の磁気バブル素子
の要部断面図を第１図に示す。第１図において１
は磁性膜、２は第１導体パターン、３は第１絶縁
層、４は第２導体パターン、５は第２絶縁層、６
は磁気バブル検出用の薄膜、７はパツシベーシヨ
ン膜である。 FIG. 1 shows a cross-sectional view of a main part of a conventional two-layer conductor current-driven magnetic bubble element. In Figure 1, 1
2 is a magnetic film, 2 is a first conductor pattern, 3 is a first insulating layer, 4 is a second conductor pattern, 5 is a second insulating layer, 6
7 is a thin film for detecting magnetic bubbles, and 7 is a passivation film.
第１導体パターン層２と第２導体パターン層４
のパターン形成時にイオンミーリング法や平行平
板型プラズマエツチング法を使用してエツチング
を行うと、第２導体パターン４の膜厚のバラツキ
や装置上のエツチング分布のバラツキなどからエ
ツチング終了時点までに第１絶縁層３をかなり削
り取ることになり、第１導体パターン２と第２導
体パターン４との間の絶縁不良の原因になりやす
いものである。又、第２導体パターン４の導体物
質として使用するAl−Cu又はAuのみ所定のパタ
ーンにエツチングし、第１絶縁層３はエツチング
しない完全な選択エツチングを行う方法として湿
式エツチング法があるが、第２導体パターン４に
多数の穴パターンを形成する際微細な穴パターン
間でのエツチングむらが大きく、このため湿式エ
ツチング法は適用することができない。 First conductor pattern layer 2 and second conductor pattern layer 4
If etching is performed using ion milling or parallel plate plasma etching when forming a pattern, the first pattern will be removed by the end of etching due to variations in the film thickness of the second conductor pattern 4 and variations in the etching distribution on the device. This results in a considerable amount of the insulating layer 3 being scraped off, which is likely to cause poor insulation between the first conductor pattern 2 and the second conductor pattern 4. In addition, there is a wet etching method as a method of completely selective etching in which only Al-Cu or Au used as the conductive material of the second conductive pattern 4 is etched into a predetermined pattern and the first insulating layer 3 is not etched. When forming a large number of hole patterns in the two-conductor pattern 4, etching unevenness among fine hole patterns is large, and therefore wet etching cannot be applied.
従つてAl−Cu，Au等の導体物質をエツチング
し、第１絶縁層３をほとんどエツチングしない選
択性のある反応ガスを利用したプラズマエツチン
グを施こさねばならない。しかし、その選択性も
反応速度比は1/5程度で、やはりエツチングのバ
ラツキを考えると十分とはいえない。又、第１導
体パターン２を何らかの方法で第２図に示すよう
に平坦化した場合、第２導体パターン４をエツチ
ング方式で形成したので第２導体パターン４より
上側に形成される磁気バブル検出用薄膜６が第２
導体パターン４のパターン部エツジで断差を生じ
てしまい断差切れを生じやすい。又、第２絶縁層
の第２導体パターンのパターンエツジ部上に被着
させる部分に絶縁不良が生じやすく、このため磁
気バブル検出用薄膜６と第２導体パターン４との
シヨートの原因をつくりやすい等の欠点がある。 Therefore, it is necessary to perform plasma etching using a selective reactive gas that hardly etches the first insulating layer 3 while etching the conductive material such as Al--Cu or Au. However, the selectivity is only about 1/5 of the reaction rate, which is still not sufficient considering the variation in etching. Furthermore, when the first conductor pattern 2 is flattened by some method as shown in FIG. 2, since the second conductor pattern 4 is formed by etching, the magnetic bubbles formed above the second conductor pattern 4 are used for detecting magnetic bubbles. The thin film 6 is the second
A difference is generated at the edge of the pattern portion of the conductor pattern 4, which tends to cause the difference to break. In addition, poor insulation tends to occur in the portion of the second insulating layer that is deposited on the pattern edge portion of the second conductor pattern, which tends to cause shorting between the magnetic bubble detection thin film 6 and the second conductor pattern 4. There are drawbacks such as.
本発明ではAl−Cuの第２導体層４のパターン
化にエツチングではなく陽極酸化法を利用するた
め、第１導体層２と第２導体層４との間に設ける
第１絶縁層３に何ら影響を与えることなく微細な
パターンを形成することができ、しかも第１導体
層２をプレーナ状に形成し、Al−Cuの第２導体
層４のパターン形成後、第２導体層４より上側の
磁気バブル検出用薄膜６を平坦なパターンに形成
させることができるようにしたものである。 In the present invention, since an anodic oxidation method is used instead of etching for patterning the second conductor layer 4 of Al-Cu, there is no need for the first insulating layer 3 provided between the first conductor layer 2 and the second conductor layer 4. A fine pattern can be formed without any influence, and the first conductor layer 2 is formed in a planar shape, and after patterning the second conductor layer 4 of Al-Cu, the upper part of the second conductor layer 4 is The magnetic bubble detection thin film 6 can be formed into a flat pattern.
第３図ａ〜第３図ｆは本発明の一実施例を示す
２層導体電流駆動型の磁気バブル素子の製造方法
の説明図であり、以下図に従つて説明する。 FIGS. 3a to 3f are explanatory diagrams of a method of manufacturing a two-layer conductor current-driven magnetic bubble element showing an embodiment of the present invention, and will be described below with reference to the figures.
厚さ2500Åの第１導体層２の磁気バブル転送路
となる部分８を何らかの方法で絶縁部としプレー
ナ状の第１導体パターン２を形成する。この第１
導体パターン２のパターン上に第１絶縁層３を
1500Åの厚さに形成し、次いで第２導体層４とし
ててAl−Cu（Cu：３％）を5000Åの厚さに真空
蒸着する。（第３図ａ）
この第２導体層４の全面を約1000Åの厚さにわ
たつて陽極酸化し、コンポジツトなAl2O3である
第２絶縁層９を形成する。（第３図ｂ）陽極酸化
はホウ酸アンモニウムのエツチングリコール飽和
溶液中80Vの定電圧で形成できる。次いで陽極酸
化で形成した第２絶縁層９上にレジストパターン
１０を形成する。（第３図ｃ）次にイオンミーリ
ング法、又は平行平板型プラズマエツチング法で
レジストパターンに応じ、この第２絶縁層を選択
的にエツチングし、第２導体層４を選択的に露出
させる。（第３図ｄ）次いで第２導体層２の選択
的に露出された部分を陽極酸化して、磁気バブル
転送路となるポーラスなAl2O3部１１を形成し、
その結果として第２導体層４がパターン化され、
第２導体パターンが形成される。この場合の
Al2O3部１１はレジストパターン１０と第２絶縁
層９との界面の位置まで増加する。陽極酸化はし
ゆう酸又は硫酸の１％溶液中で10Vの印加電圧で
行うが、この陽極酸化終了後レジスト１０のはく
離を行うが、表面に露出した部分である第２絶縁
層９並びにコンポジツトなAl2O3部１１はほとん
ど段差を生ぜず、ほぼ平坦な形状となるものであ
る。（第３図ｅ）この上に更に新たな第３絶縁層
１２を平坦状に被着させ、その上に磁気バブル検
出用薄膜６としてAl−Cu又はパーマロイを被着
させ、更にパツシベーシヨン膜７を形成する。
（第３図ｆ）
この結果、第４図に示す如く、磁性膜１上に、
第１導体パターン２、第１絶縁層３、第２導体パ
ターン４、第２絶縁層９、第３絶縁層１２、磁気
バブル検出用薄膜６を、順次プレーナー状に積層
した磁気バブル素子が構成できる。 A planar first conductor pattern 2 is formed by using a portion 8 of the first conductor layer 2 having a thickness of 2500 Å, which will become a magnetic bubble transfer path, as an insulating portion by some method. This first
A first insulating layer 3 is placed on the pattern of the conductor pattern 2.
It is formed to a thickness of 1500 Å, and then Al--Cu (Cu: 3%) is vacuum-deposited as the second conductor layer 4 to a thickness of 5000 Å. (FIG. 3a) The entire surface of the second conductor layer 4 is anodized to a thickness of about 1000 Å to form a second insulating layer 9 made of composite Al 2 O 3 . (Figure 3b) Anodic oxidation can be performed at a constant voltage of 80 V in an etching glycol saturated solution of ammonium borate. Next, a resist pattern 10 is formed on the second insulating layer 9 formed by anodic oxidation. (FIG. 3c) Next, the second insulating layer is selectively etched according to the resist pattern by ion milling or parallel plate plasma etching to selectively expose the second conductor layer 4. (FIG. 3d) Next, selectively exposed portions of the second conductive layer 2 are anodized to form a porous Al 2 O 3 portion 11 that will become a magnetic bubble transfer path,
As a result, the second conductor layer 4 is patterned,
A second conductor pattern is formed. In this case
The Al 2 O 3 portion 11 increases to the position of the interface between the resist pattern 10 and the second insulating layer 9 . The anodization is carried out in a 1% solution of oxalic acid or sulfuric acid with an applied voltage of 10V. After the anodization is completed, the resist 10 is stripped, but the exposed parts of the second insulating layer 9 and the composite are removed. The Al 2 O 3 portion 11 has almost no steps and has a substantially flat shape. (Fig. 3e) A new third insulating layer 12 is deposited on top of this in a flat shape, Al-Cu or permalloy is deposited on top of this as a thin film 6 for detecting magnetic bubbles, and a passivation film 7 is further deposited. Form.
(FIG. 3f) As a result, as shown in FIG. 4, on the magnetic film 1,
A magnetic bubble element can be constructed in which the first conductor pattern 2, the first insulating layer 3, the second conductor pattern 4, the second insulating layer 9, the third insulating layer 12, and the magnetic bubble detection thin film 6 are sequentially laminated in a planar shape. .
以上の方法によれば、第２導体パターン形成時
に第１絶縁層をエツチングすることなくプレーナ
ーパターン化できるので、第１絶縁層を薄くする
ことができる。 According to the above method, a planar pattern can be formed without etching the first insulating layer when forming the second conductor pattern, so that the first insulating layer can be made thinner.
又、第１導体パターンをプレーナ化し、第２導
体パターンのAl−Cuパターンもプレーナ化され
ため第２導体パターンのAl−Cuパターンより上
側に形成する磁気バブル検出用薄膜を平坦面上に
形成することができて断差切れの問題を生ずるこ
ともなく、第２導体パターンとのシヨートを防ぐ
ことが可能となる。 In addition, since the first conductor pattern is planarized and the Al-Cu pattern of the second conductor pattern is also planarized, a thin film for magnetic bubble detection is formed on the flat surface above the Al-Cu pattern of the second conductor pattern. This eliminates the problem of disconnection and prevents shorting with the second conductor pattern.
第１図は従来の２層導体電流駆動型の磁気バブ
ル素子の要部の断面図、第２図は第１層導体プレ
ーナ化したときの従来の２層導体電流駆動型の磁
気バブル素子の要部断面図、第３図ａ〜第３図ｆ
は本発明の一実施例の製造方法の説明図、第４図
は本発明による２層導体電流駆動型の磁気バブル
素子の要部断面図。
１……磁性膜、２……第１導体層、３……第１
絶縁層、４……Al−Cuの第２導体層、５……第
２絶縁層、６……磁気バブル検出用薄膜、７……
パツシベーシヨン膜、８……絶縁部、９……第２
絶縁層、１０……レジストパターン、１１………
Al2O3部、１２……第３絶縁層。
Figure 1 is a sectional view of the main parts of a conventional two-layer conductor current-driven magnetic bubble element, and Figure 2 is a diagram showing the main parts of a conventional two-layer conductor current-driven magnetic bubble element when the first layer is made into a planar conductor. Partial sectional view, Figures 3a to 3f
4 is an explanatory diagram of a manufacturing method according to an embodiment of the present invention, and FIG. 4 is a sectional view of a main part of a two-layer conductor current-driven magnetic bubble element according to the present invention. 1... Magnetic film, 2... First conductor layer, 3... First
Insulating layer, 4... Second conductor layer of Al-Cu, 5... Second insulating layer, 6... Thin film for magnetic bubble detection, 7...
Passivation film, 8...Insulating part, 9...Second
Insulating layer, 10...Resist pattern, 11...
3 parts of Al 2 O, 12...Third insulating layer.
Claims (1)
が順次平坦状に形成されたものを用意し、前記第
１絶縁層上にAl−Cuの第２導体層と当該第２導
体層の陽極酸化による厚みの増加分に対応する厚
さの第２絶縁層とを順に形成し、前記第２絶縁層
を選択的にエツチングして前記第２導体層を選択
的に露出させ、当該露出部分に対応する前記第２
導体層を陽極酸化して、第２導体パターンを形成
し、当該第２導体パターンの陽極酸化部と前記第
２絶縁層とで形成される平坦面上に第３絶縁層を
積層することを特徴とする２層導体電流駆動方式
の磁気バブル素子の製造方法。1. Prepare a magnetic film in which a first conductive pattern and a first insulating layer are sequentially formed flat, and then a second conductive layer of Al-Cu and a second conductive layer of the second conductive layer are formed on the first insulating layer. a second insulating layer having a thickness corresponding to the increase in thickness due to anodic oxidation, and selectively etching the second insulating layer to selectively expose the second conductive layer; said second corresponding to
The conductor layer is anodized to form a second conductor pattern, and a third insulating layer is laminated on a flat surface formed by the anodized portion of the second conductor pattern and the second insulating layer. A method for manufacturing a magnetic bubble element using a two-layer conductor current drive method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15008980A JPS5773925A (en) | 1980-10-28 | 1980-10-28 | Preparation of magnetic bubble element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15008980A JPS5773925A (en) | 1980-10-28 | 1980-10-28 | Preparation of magnetic bubble element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5773925A JPS5773925A (en) | 1982-05-08 |
| JPS6137770B2 true JPS6137770B2 (en) | 1986-08-26 |
Family
ID=15489266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15008980A Granted JPS5773925A (en) | 1980-10-28 | 1980-10-28 | Preparation of magnetic bubble element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5773925A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63105620A (en) * | 1987-01-29 | 1988-05-10 | ジェイ・ジィー・テックス株式会社 | Automatic irrigation system |
| JPS63105619A (en) * | 1986-10-22 | 1988-05-10 | ジェイ・ジィー・テックス株式会社 | Automatic irrigation system |
-
1980
- 1980-10-28 JP JP15008980A patent/JPS5773925A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63105619A (en) * | 1986-10-22 | 1988-05-10 | ジェイ・ジィー・テックス株式会社 | Automatic irrigation system |
| JPS63105620A (en) * | 1987-01-29 | 1988-05-10 | ジェイ・ジィー・テックス株式会社 | Automatic irrigation system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5773925A (en) | 1982-05-08 |
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