JPH0434253B2 - - Google Patents
Info
- Publication number
- JPH0434253B2 JPH0434253B2 JP27522184A JP27522184A JPH0434253B2 JP H0434253 B2 JPH0434253 B2 JP H0434253B2 JP 27522184 A JP27522184 A JP 27522184A JP 27522184 A JP27522184 A JP 27522184A JP H0434253 B2 JPH0434253 B2 JP H0434253B2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- field
- carbon film
- single crystal
- hydrocarbon gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 9
- 239000004215 Carbon black (E152) Substances 0.000 claims description 8
- 229930195733 hydrocarbon Natural products 0.000 claims description 8
- 150000002430 hydrocarbons Chemical class 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 7
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 230000001747 exhibiting effect Effects 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 125000003821 2-(trimethylsilyl)ethoxymethyl group Chemical group [H]C([H])([H])[Si](C([H])([H])[H])(C([H])([H])[H])C([H])([H])C(OC([H])([H])[*])([H])[H] 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は高安定電子放射特性を示すフイールド
エミツターの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a field emitter exhibiting highly stable electron emission characteristics.
フイールドエミツターからの放射電流は、高輝
度、可干渉性、点光源などの優れた性質を示す。
これは電子線露光機、低加速SEM、分析電子顕
微鏡などの電子源として重要である。 The emitted current from the field emitter exhibits excellent properties such as high brightness, coherence, and point light source.
This is important as an electron source for electron beam exposure machines, low-acceleration SEMs, analytical electron microscopes, etc.
従来技術
従来、フイールドエミツターとしては、Ｗが実
用化されてきたが、このフイールドエミツターは
電流の安定性に問題があり、時間と共に大幅に減
衰すると共に電流変動も大きいので、広い応用を
疎外している。Conventional technology Conventionally, W has been put into practical use as a field emitter, but this field emitter has a problem with current stability, and as it significantly attenuates over time and has large current fluctuations, it has been excluded from a wide range of applications. are doing.
また炭化チタン単結晶からなるフイールドエミ
ツターも知られている。しかし、このフイールド
エミツターからの放射電子は、チツプ先端近傍か
ら放射状に放出され、いくつかの電子ビーム塊に
分れる問題点がある。 Field emitters made of single crystal titanium carbide are also known. However, there is a problem in that the radiated electrons from this field emitter are radially emitted from near the tip of the chip and are divided into several electron beam clusters.
発明の目的
本発明は従来の炭化チタン単結晶からなるフイ
ールドエミツターの問題点をなくするためになさ
れたもので、その目的は電流安定性がよく、高輝
度で電子放射特性の優れたフイールドエミツター
の製造方法を提供するにある。Purpose of the Invention The present invention was made in order to eliminate the problems of conventional field emitters made of single crystal titanium carbide. To provide a method for manufacturing vines.
発明の構成
本発明者らは前記目的を達成するための鋭意研
究の結果、炭化チタン単結晶エミツターを炭化水
素ガス中で900〜1400℃で熱処理して、該エミツ
ターの表面に炭素膜を形成させた後、超高真空下
で107Ｖ／cm以上の強電界を印加すると、エミツ
シヨンパターンが変化し、安定な電流特性を示す
フイールドエミツターが得られることを究明し得
た。この知見に基いて本発明を完成した。Structure of the Invention As a result of intensive research to achieve the above object, the present inventors heat-treated a titanium carbide single crystal emitter in a hydrocarbon gas at 900 to 1400°C to form a carbon film on the surface of the emitter. After that, we found that when a strong electric field of 10 7 V/cm or more is applied under ultra-high vacuum, the emission pattern changes and a field emitter with stable current characteristics can be obtained. The present invention was completed based on this knowledge.
本発明の要旨は、炭化チタン単結晶エミツター
を、炭化水素ガス中で900〜1400℃で熱処理して、
その表面に炭素膜を形成させた後、超高真空下で
107Ｖ／cm以上の強電界を印加することを特徴と
する高安定電子放射特性を示すフイールドエミツ
ターの製造方法にある。 The gist of the present invention is to heat-treat a titanium carbide single crystal emitter at 900 to 1400°C in a hydrocarbon gas,
After forming a carbon film on the surface, under ultra-high vacuum
A method for manufacturing a field emitter exhibiting highly stable electron emission characteristics characterized by applying a strong electric field of 10 7 V/cm or more.
本発明において使用する炭化チタン単結晶エミ
ツターは、TiC単結晶ロツドから切り出した、例
えば、0.2×0.2×３mmの直方体の先端を電解研磨
法により約0.1μｍの先端径とし、このエミツター
を超高真空下で1500℃でフラツシユ加熱する。こ
れにより清浄表面とすると共にチツプ先端を
（100），（111）面で覆われた形状のものにする。
例えば、TiC＜110＞エミツターの場合は第１図
に示すような形状のものとなる。このTiC＜110
＞エミツターからのエミツシヨンパターンは第２
図に示すようになる。（なお、斜線部分は電子ビ
ームのあたつた部分を示す。）これはチツプ先端
の（100），（111）の各結晶面から作られる尖つた
部分からのエミツシヨンに対応する。このTiCの
エミツシヨンパターンは電界強度の大きい個所か
らの電子のエミツシヨンで説明できる。 The titanium carbide single crystal emitter used in the present invention is made by cutting the tip of a 0.2 x 0.2 x 3 mm rectangular parallelepiped from a TiC single crystal rod to a tip diameter of about 0.1 μm by electropolishing, and then polishing this emitter under ultra-high vacuum. Flash heat at 1500℃ below. This makes the surface clean and the tip of the chip has a shape covered with (100) and (111) planes.
For example, a TiC<110> emitter has a shape as shown in FIG. This TiC＜110
>The emitter pattern from the emitter is the second one.
The result will be as shown in the figure. (Note that the shaded area indicates the area hit by the electron beam.) This corresponds to the emission from the pointed area formed from the (100) and (111) crystal planes at the tip of the chip. This TiC emission pattern can be explained by the emission of electrons from locations with high electric field strength.
このようにして得られたTiC単結晶エミツター
の表面に炭素膜を形成させる。炭素膜の形成は、
TiCエミツターを炭化水素ガス中で900〜1400℃
で加熱することによつて得られる。その加熱時間
は100L（ラングミユアー、Ｌ＝10-6Torr×sec）
以上とする。即ち、炭化水素ガスを超高真空装置
に導入し、真空度が５×100-6Torrの場合は20秒
以上の処理時間が必要である。炭化水素ガスとし
ては、エチレン、メタン等が挙げられる。しかし
これに限定されるものではない。 A carbon film is formed on the surface of the TiC single crystal emitter thus obtained. The formation of carbon film is
TiC emitter in hydrocarbon gas at 900~1400℃
It can be obtained by heating at The heating time is 100L (Langmiure, L=10 -6 Torr×sec)
The above shall apply. That is, when hydrocarbon gas is introduced into an ultra-high vacuum apparatus and the degree of vacuum is 5 x 100 -6 Torr, a processing time of 20 seconds or more is required. Examples of the hydrocarbon gas include ethylene and methane. However, it is not limited to this.
このようにして表面に炭素膜を形成したチツプ
から超高真空下で全電流10〜20μAで30分以上電
子ビームを放射する。10〜20μAの全電流をチツ
プから取り出すためには、107Ｖ／cm以上の強電
界を印加する必要がある。これにより、エミツシ
ヨンパターンは第２図から第３図のものに変化す
る。これは、表面に形成された炭素膜の炭素原子
が強電界の印加によりチツプ先端に移動するため
と考えられる。 An electron beam is emitted from the chip with the carbon film formed on its surface under ultra-high vacuum for over 30 minutes at a total current of 10 to 20 μA. In order to extract a total current of 10 to 20 μA from the chip, it is necessary to apply a strong electric field of 10 7 V/cm or more. As a result, the emission pattern changes from that shown in FIG. 2 to that shown in FIG. 3. This is thought to be because carbon atoms in the carbon film formed on the surface move to the tip of the chip due to the application of a strong electric field.
なお、斜線部分が電子ビームのあたつた個所
で、点線で示す部分は清浄表面からのエミツシヨ
ンパターンを示す。 Note that the shaded area is the area hit by the electron beam, and the area shown by the dotted line is the emission pattern from the clean surface.
なお、炭化水素ガス中でのチツプの加熱温度を
900℃未満にすると炭化水素ガスが分解せず、ま
た1400℃超にすると炭素膜の蒸発や表面から内部
への炭素原子の拡散が大きくなり、いずれの場合
も表面に炭素膜が形成されないので、エミツシヨ
ンパターンは第２図のままであり、第３図に示す
パターンには変化しない。また電子放射特性も改
善されない。 In addition, the heating temperature of the chip in hydrocarbon gas is
If the temperature is lower than 900℃, the hydrocarbon gas will not decompose, and if the temperature is higher than 1400℃, the evaporation of the carbon film and the diffusion of carbon atoms from the surface to the inside will increase, and in either case, no carbon film will be formed on the surface. The emission pattern remains as shown in FIG. 2 and does not change to the pattern shown in FIG. 3. Further, the electron emission characteristics are not improved either.
このようにして得られたフイールドエミツター
は電流雑音は±0.2％以下、ドリフト±0.2％／hr
以下の優れた特性を示す。その電流特性は第４図
に示す通りであり、一定の電流値を示し極めて安
定である。 The field emitter obtained in this way has a current noise of less than ±0.2% and a drift of ±0.2%/hr.
Shows the following excellent properties. Its current characteristics are as shown in FIG. 4, and it exhibits a constant current value and is extremely stable.
この実験条件は真空度3.5×10-11Torr、印加電
圧1500Vで行つたものである。 The experimental conditions were a vacuum level of 3.5×10 -11 Torr and an applied voltage of 1500V.
実施例
先端径0.1μｍのTiC0.96＜110＞フイールドエミ
ツターを超高真空下にセツトし、1500℃にフラツ
シユ加熱した。この真空系にエチレンガスを導入
し、５×10-6Torrの真空度にした後、1100℃で
30分間加熱してチツプ表面に炭素膜を形成させ
た。この後、3.5×10-11Torrの真空下で全電流
10μAを30分以上放射し（107Ｖ／cm以上の強電界
の印加）続けてエミツシヨンパターンを変化させ
た。Example A TiC 0.96 <110> field emitter with a tip diameter of 0.1 μm was set under ultra-high vacuum and flash heated to 1500°C. Ethylene gas was introduced into this vacuum system to achieve a vacuum level of 5×10 -6 Torr, and then the temperature was increased to 1100℃.
A carbon film was formed on the chip surface by heating for 30 minutes. After this, the total current under vacuum of 3.5×10 -11 Torr
The emission pattern was changed by continuously emitting 10 μA for 30 minutes or more (applying a strong electric field of 10 7 V/cm or more).
上記製法によつて得たフイールドエミツターの
電流雑音は±0.2％以下、ドリフトは±0.2％／hr
以下でその電流特性は第４図に示す通りであつ
た。 The current noise of the field emitter obtained by the above manufacturing method is less than ±0.2%, and the drift is ±0.2%/hr.
The current characteristics were as shown in FIG. 4 below.
第１図はTiC＜110＞エミツターの1500℃フラ
ツシユ加熱後の先端形状、第２図は第１図のエミ
ツターからのエミツシヨンパターン、第３図は第
１図のエミツターチツプの表面に炭化皮膜を形成
させた後のエミツシヨンパターン、第４図は本発
明の方法で製造したエミツターの全電流と時間と
の関係図であり、この時の実験条件は真空度3.5
×10-11Torr、印加電圧1500Vである。
Figure 1 shows the tip shape of the TiC <110> emitter after flash heating at 1500℃, Figure 2 shows the emission pattern from the emitter in Figure 1, and Figure 3 shows the carbonized film on the surface of the emitter tip in Figure 1. Figure 4 shows the relationship between the total current and time of the emitter manufactured by the method of the present invention, and the experimental conditions at this time were a degree of vacuum of 3.5.
×10 -11 Torr, applied voltage 1500V.
Claims (1)
ス中で900〜1400℃で熱処理して、その表面に炭
素膜を形成させた後、超高真空下で107Ｖ／cm以
上の強電界を印加することを特徴とする高安定電
子放射特性を示すフイールドエミツターの製造
法。1 A titanium carbide single crystal emitter is heat-treated at 900 to 1400°C in hydrocarbon gas to form a carbon film on its surface, and then a strong electric field of 10 7 V/cm or more is applied under ultra-high vacuum. A method for manufacturing a field emitter exhibiting highly stable electron emission characteristics characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59275221A JPS61153918A (en) | 1984-12-27 | 1984-12-27 | Manufacture of field emitter exhibiting highly stable electron emission characteristic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59275221A JPS61153918A (en) | 1984-12-27 | 1984-12-27 | Manufacture of field emitter exhibiting highly stable electron emission characteristic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61153918A JPS61153918A (en) | 1986-07-12 |
| JPH0434253B2 true JPH0434253B2 (en) | 1992-06-05 |
Family
ID=17552389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59275221A Granted JPS61153918A (en) | 1984-12-27 | 1984-12-27 | Manufacture of field emitter exhibiting highly stable electron emission characteristic |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61153918A (en) |
-
1984
- 1984-12-27 JP JP59275221A patent/JPS61153918A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61153918A (en) | 1986-07-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |