JPH0533487B2 - - Google Patents
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- Publication number
- JPH0533487B2 JPH0533487B2 JP16872785A JP16872785A JPH0533487B2 JP H0533487 B2 JPH0533487 B2 JP H0533487B2 JP 16872785 A JP16872785 A JP 16872785A JP 16872785 A JP16872785 A JP 16872785A JP H0533487 B2 JPH0533487 B2 JP H0533487B2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- surface treatment
- treatment
- single crystal
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004381 surface treatment Methods 0.000 claims description 21
- 230000005684 electric field Effects 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 15
- 229910052717 sulfur Inorganic materials 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001093 holography Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Landscapes
- Carbon And Carbon Compounds (AREA)
- Cold Cathode And The Manufacture (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は高安定な電子放射特性を示すフイール
ドエミツターの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a field emitter exhibiting highly stable electron emission characteristics.
フイールドエミツターからの放射電流は輝度が
大きく、放射電子のエネルギー幅が小さく、しか
も点光源に近いなどの優れた性質を持つているの
で、低加速走査型電子顕微鏡、分析電子顕微鏡、
電子線ホログラフイー電子顕微鏡等の新機能電子
顕微鏡の実現、電子顕微鏡の高分解能化に必須で
あり、またナノメートルリソグラフイー等の分野
においても不可欠なものである。 The emitted current from the field emitter has excellent properties such as high brightness, small energy width of emitted electrons, and is close to a point light source, so it can be used for low-acceleration scanning electron microscopes, analytical electron microscopes,
It is essential for realizing new functional electron microscopes such as electron beam holography electron microscopes and for increasing the resolution of electron microscopes, and is also essential for fields such as nanometer lithography.
従来技術
従来、フイールドエミツターとしては、Ｗが実
用化されている。しかし、電流の安定性に問題が
あり、広い応用を疎外している。Prior Art Conventionally, W has been put into practical use as a field emitter. However, there are problems with current stability, which precludes wide application.
本発明者らはさきに、炭化チタン単結晶を用い
たフイールドエミツターとして、エミツターの軸
方位を〈110〉方位に選ぶことにより、従来実現
していなかつた放射電子ビームの方向をエミツタ
ー軸方位にすることに成功した。（特願昭58−
199605号）。さらに、炭化チタン単結晶チツプ表
面を酸素ガスによる処理（特願昭59−275220号）
及びC2H4などの炭化水素ガスによる処理（特願
昭59−275221号）を施すことにより、高安定な電
子放射特性を示すフイールドエミツターを得るこ
とを開発し得た。 The present inventors previously developed a field emitter using titanium carbide single crystal, and by selecting the emitter's axial direction to be in the <110> direction, the direction of the emitted electron beam could be changed to the emitter's axial direction, which had not been achieved in the past. succeeded in doing so. (Special application 1982-
No. 199605). Furthermore, the surface of the titanium carbide single crystal chip was treated with oxygen gas (Japanese Patent Application No. 59-275220).
By applying treatment with a hydrocarbon gas such as C 2 H 4 (Japanese Patent Application No. 59-275221), we were able to develop a field emitter that exhibits highly stable electron emission characteristics.
発明の目的
本発明の目的は炭化チタン単結晶エミツターの
表面処理方法を新たに開発し、さらに優れた安定
性を示すフイールドエミツターの製造方法を提供
するにある。OBJECTS OF THE INVENTION The objects of the present invention are to develop a new method for surface treatment of titanium carbide single crystal emitters and to provide a method for manufacturing field emitters exhibiting even better stability.
発明の構成
本発明者らは前記目的を達成すべく、更に研究
を続けた結果、H2ＳまたはＳを含むガス（例え
ばSF）（以下H2Ｓと略記する）で、900〜1400℃
の下で処理し、またはこの処理とO2ガスによる
処理及び又はC2H4またはその他の炭化水素ガス
（例えばC2H6）（以下C2H4と略記する）を併用し
て処理した後、さらに超高真空下で107Ｖ／cm以
上の強電界を印加すると、エミツシヨンパターン
が変化し、安定な特性を示すフイールドエミツタ
ーが得られることを究明し得た。この知見に基い
て本発明を完成した。Structure of the Invention In order to achieve the above object, the present inventors continued their research and found that H 2 S or a gas containing S (e.g. SF) (hereinafter abbreviated as H 2 S) was used at a temperature of 900 to 1400°C.
or in combination with this treatment and treatment with O 2 gas and/or with C 2 H 4 or other hydrocarbon gases (e.g. C 2 H 6 ) (hereinafter abbreviated as C 2 H 4 ). Subsequently, it was discovered that when a strong electric field of 10 7 V/cm or more was applied under ultra-high vacuum, the emission pattern changed and a field emitter with stable characteristics could be obtained. The present invention was completed based on this knowledge.
本発明の要旨は
１ 炭化チタン単結晶エミツター表面を、900〜
1400℃の下で、H2Ｓによる表面処理を施した
後、超高真空下で107Ｖ／cm以上の強電界を印
加することを特徴とする高安定フイールドエミ
ツターの製造方法。 The gist of the present invention is 1. The surface of the titanium carbide single crystal emitter is
A method for manufacturing a highly stable field emitter, which comprises applying a strong electric field of 10 7 V/cm or more under an ultra-high vacuum after surface treatment with H 2 S at 1400°C.
２ 炭化チタン単結晶エミツター表面を900〜
1400℃の下で、H2ＳまたはＳを含んだガスに
よる表面処理とO2による表面処理とを別個に
または同時に施した後、超高真空下で、107
Ｖ／cm以上の強電界を印加することを特徴とす
る高安定フイールドエミツターの製造方法。2 Titanium carbide single crystal emitter surface 900~
After performing surface treatment with H 2 S or a gas containing S and surface treatment with O 2 separately or simultaneously at 1400°C, under ultra-high vacuum, 10 7
A method for manufacturing a highly stable field emitter characterized by applying a strong electric field of V/cm or more.
３ 炭化チタン単結晶エミツター表面を、900〜
1400℃の下で、H2Ｓによる表面処理と、C2H4
による表面処理とを別個にまたは同時に施した
後、超高真空下で、107Ｖ／cm以上の強電界を
印加することを特徴とする高安定フイールドエ
ミツターの製造方法。3 Titanium carbide single crystal emitter surface with 900 ~
Surface treatment with H 2 S and C 2 H 4 at 1400℃
1. A method for producing a highly stable field emitter, which comprises applying a strong electric field of 10 7 V/cm or more under an ultra-high vacuum after separately or simultaneously applying a surface treatment of .
４ 炭化チタン単結晶エミツター表面を、900〜
1400℃の下で、H2Ｓによる表面処理、O2によ
る表面処理及びC2H4による表面処理を別個に、
例えばH2Ｓ→O2→C2H4，H2Ｓ→C2H4→O2，
C2H4→H2Ｓ→O2，C2H4→O2→H2Ｓ，O2→C2
H4→H2Ｓ，またはO2→H2Ｓ→C2H4の順序ま
たは同時に施した後、超高真空下で、107Ｖ／
cm以上の強電界を印加することを特徴とする高
安定フイールドエミツターの製造方法、にあ
る。4 Titanium carbide single crystal emitter surface with 900 ~
At 1400°C, surface treatment with H 2 S, surface treatment with O 2 and surface treatment with C 2 H 4 were carried out separately.
For example, H 2 S→O 2 →C 2 H 4 , H 2 S→C 2 H 4 →O 2 ,
C 2 H 4 →H 2 S→O 2 , C 2 H 4 →O 2 →H 2 S, O 2 →C 2
After applying H 4 → H 2 S, or O 2 → H 2 S → C 2 H 4 in the order or simultaneously, apply 10 7 V /
A method for manufacturing a highly stable field emitter characterized by applying a strong electric field of cm or more.
本発明において使用する炭化チタン単結晶エミ
ツターは、炭化チタン単結晶ロツドから切り出し
た例えば0.2×0.2×３mmの直方体の先端を電解研
磨法により約0.1μmの先端径とし、このエミツタ
ーを超高真空下で1500℃フラツシユ加熱し、TiC
〈110〉エミツターの表面を洗浄したものを使用す
る。そのエミツシヨンパターンは第１図に示す通
りである。なお、図中の斜線部分が電子ビームの
あたつた部分を表わす。 The titanium carbide single crystal emitter used in the present invention is made by cutting the tip of a 0.2 x 0.2 x 3 mm rectangular parallelepiped from a titanium carbide single crystal rod to a tip diameter of about 0.1 μm by electropolishing, and then polishing the emitter under ultra-high vacuum. Flash heated to 1500℃ and TiC
<110> Use a surface-cleaned emitter. The emission pattern is as shown in FIG. Note that the shaded area in the figure represents the area hit by the electron beam.
このような洗浄表面を持つたTiC〈110〉チツプ
をH2Ｓガス中で、例えば10-6Torrの下で900〜
1400℃で加熱する。加熱時間は2L（ラングミユア
ー）（Ｌ＝10-6Torr×1sec）以上になるように選
ぶ。加熱温度が900℃未満及び1400℃を越えると、
エミツシヨンパターンは洗浄表面からのエミツシ
ヨンパターンと同じであり、電子放射特性も改善
されない。従つて、加熱温度は900〜1400℃であ
ることが必要である。 A TiC〈110〉 chip with such a cleaned surface is heated in H 2 S gas under, for example, 10 -6 Torr to
Heat at 1400℃. The heating time should be selected to be at least 2L (Langmiure) (L = 10 -6 Torr x 1sec). When the heating temperature is less than 900℃ and exceeds 1400℃,
The emission pattern is the same as that from the cleaned surface, and the electron emission characteristics are not improved. Therefore, the heating temperature needs to be 900 to 1400°C.
このように表面処理した後、超高真空下で、
107Ｖ／cm以上の強電界を印加する。ここで、107
Ｖ／cm以上の強電界を印加するのは、表面層原子
をチツプ先端に移動させるために少なくとも
10μAの全電流を取り出すためである。約10μAの
全電流を取り出すには、エミツターチツプの先端
を電解研磨して、先端曲率半径を0.1μmとし、
23kVの電圧を印加すればよく、これはチツプ先
端に107Ｖ／cmの電界を印加したことに対応する。 After surface treatment in this way, under ultra-high vacuum,
Apply a strong electric field of 10 7 V/cm or more. Here, 10 7
Applying a strong electric field of V/cm or more is necessary to move the surface layer atoms to the tip of the chip.
This is to extract a total current of 10μA. In order to extract a total current of about 10 μA, the tip of the emitter tip is electrolytically polished to have a radius of curvature of 0.1 μm.
It is sufficient to apply a voltage of 23 kV, which corresponds to applying an electric field of 10 7 V/cm to the tip of the chip.
この表面処理により、表面に生成した硫黄原子
層或いは硫化物層が107Ｖ／cm以上の強電界の印
加によりチツプ先端に移動した結果、チツプの曲
率半径が小さくなり、チツプの先鋭化が起こる。
電子放射は、この先端の電界強度の強い局所部分
から起こるので、第２図に示すエミツシヨンパタ
ーンに変化する。なお、同図の点線部分は表面処
理前の洗浄表面からのエミツシヨンパターンを示
す。 Due to this surface treatment, the sulfur atomic layer or sulfide layer generated on the surface moves to the tip of the chip by applying a strong electric field of 10 7 V/cm or more, resulting in a decrease in the radius of curvature of the chip and sharpening of the chip. .
Since electron emission occurs from a localized portion of the tip where the electric field strength is strong, the emission pattern changes to the one shown in FIG. Note that the dotted line portion in the same figure shows the emission pattern from the cleaned surface before surface treatment.
このような表面処理を施したTiCフイールドエ
ミツターは、電流雑音が±0.2％以下で、ドリフ
トは±0.2％／hr以下の優れた特性を示し、第３
図ａの通りとなる。 TiC field emitters with such surface treatment exhibit excellent characteristics with current noise of less than ±0.2% and drift of less than ±0.2%/hr.
As shown in Figure a.
すなわち、表面処理により、エミツター表面に
活性原子である硫黄が硫黄原子層或いは硫化物層
として生成した結果、表面が不活性となる。従つ
て、残留ガスである水素などの原子が吸着しなく
なり、仕事関数の経時変化が極めて小さくなると
共に表面吸着原子の移動もなくなるので、放射電
流は安定化する。 That is, as a result of the surface treatment, sulfur, which is an active atom, is generated as a sulfur atomic layer or a sulfide layer on the emitter surface, resulting in the surface becoming inactive. Therefore, residual gas atoms such as hydrogen are no longer adsorbed, and the change in work function over time becomes extremely small, and the movement of surface adsorbed atoms also disappears, so that the radiation current is stabilized.
前記のH2Ｓ処理とO2処理及び又はC2H4ガスに
よる処理を組合せてガス処理を施してもよい。 Gas treatment may be performed by combining the aforementioned H 2 S treatment, O 2 treatment, and/or treatment with C 2 H 4 gas.
これらを例示すると次の通りである。 Examples of these are as follows.
１ 前記のH2Ｓ処理後、さらにO2中で900〜1400
℃で加熱する。その時の加熱時間は5L以上に
なるように選ぶ。また逆にO2処理を先に施し
た後、H2Ｓガス処理を行つても、また、同時
に施してもよい。同時に行う場合はO2ガスの
導入量をO2：5L以上、H2Ｓ：2L以上と調整し
て行う。1 After the above H 2 S treatment, further 900 to 1400 in O 2
Heat at ℃. The heating time at that time should be chosen to be at least 5L. Conversely, the H 2 S gas treatment may be performed after the O 2 treatment or at the same time. If they are to be carried out at the same time, the amount of O 2 gas introduced should be adjusted to 5 L or more for O 2 and 2 L or more for H 2 S.
２ 前記１）におけるO2処理に代え、C2H4ガス
による処理（ガス導入量50L以上）を同様に行
うことができる。2 Instead of the O 2 treatment in 1) above, treatment with C 2 H 4 gas (gas introduction amount of 50 L or more) can be performed in the same manner.
３ H2Ｓ処理、O2処理及びC2H4処理を同時また
は別個に施してもよい。3 H 2 S treatment, O 2 treatment and C 2 H 4 treatment may be performed simultaneously or separately.
なお、前記１），２），３）の方法を行う場合
は、炭化チタン単結晶の方位に関係なく、優れた
安定性を示すフイールドエミツターを製造するこ
とができる。 Note that when methods 1), 2), and 3) above are carried out, a field emitter that exhibits excellent stability can be manufactured regardless of the orientation of the titanium carbide single crystal.
実施例 １
先端径0.1μmのTiC0.96〈110〉フイールドエミツ
ターを、超高真空下にセツトし、1500℃にフラツ
シユ加熱して洗浄表面を得た。この系にH2Ｓガ
スを導入し、１×10-6Torrの真空度にした後、
1100℃で10秒間加熱した。（10Lの露出量）、その
後超高真空下で全電流約10μAを30分間放射（印
加電圧3330V）（107Ｖ／cm以上の強電界の印加）
して、エミツシヨンパターンを第１図より第２図
のパターンに変化させた。得られたフイールドエ
ミツターの電流雑音は真空度５×10-12Torrの下
で±0.2％以下、ドリフト±0.2％／hr以下、その
電子放射特性は第３図ａに示す通りであつた。Example 1 A TiC 0.96 <110> field emitter with a tip diameter of 0.1 μm was set under ultra-high vacuum and flash heated to 1500° C. to obtain a cleaned surface. After introducing H 2 S gas into this system and creating a vacuum of 1 × 10 -6 Torr,
Heated at 1100°C for 10 seconds. (exposure amount of 10L), then radiate a total current of about 10μA for 30 minutes under ultra-high vacuum (applied voltage 3330V) (applying a strong electric field of 10 7 V/cm or more)
Then, the emission pattern was changed from FIG. 1 to the pattern shown in FIG. 2. The field emitter thus obtained had a current noise of less than ±0.2% under a vacuum of 5×10 -12 Torr, a drift of less than ±0.2%/hr, and its electron emission characteristics were as shown in FIG. 3a.
実施例 ２
実施例１の方法でTiC0.96〈110〉フイールドエ
ミツターチツプを、H2Ｓで表面処理した後、こ
の系にC2H4ガスを導入し、１×10-6Torrの真空
度にした後、1100℃で100秒間加熱した。（100L
の露出量）。Example 2 After surface-treating a TiC 0.96 <110> field emitter chip with H 2 S using the method of Example 1, C 2 H 4 gas was introduced into the system and the vacuum level was 1×10 -6 Torr. After heating at 1100°C for 100 seconds. (100L
amount of exposure).
その後、実施例１におけると同様に超高真空下
で107Ｖ／cm以上の強電界（1960V）を印加して
エミツシヨンパターンを第１図から第２図に変化
させた。 Thereafter, as in Example 1, a strong electric field of 10 7 V/cm or more (1960 V) was applied under ultra-high vacuum to change the emission pattern from FIG. 1 to FIG. 2.
得られたフイールドエミツターの電流雑音は真
空度５×10-12Torr下のもとで±0.2％以下、ドリ
フト±0.2％／hr以下であり、その特性は第３図
ｂに示す通りであつた。 The current noise of the obtained field emitter was less than ±0.2% under a vacuum degree of 5 × 10 -12 Torr, and the drift was less than ±0.2%/hr, and its characteristics were as shown in Figure 3b. Ta.
実施例 ３
実施例２におけるC2H4に代えてO2を使用し、
1100℃で20秒間加熱した。（20Lの露出量）以下
実施例２と同様にしてフイールドエミツターを得
た。得られたフイールドエミツターは実施例２と
同様なものであつた。Example 3 Using O 2 instead of C 2 H 4 in Example 2,
Heated at 1100°C for 20 seconds. (Exposure amount of 20 L) A field emitter was obtained in the same manner as in Example 2. The field emitter obtained was similar to that of Example 2.
実施例 ４
実施例２と同様にしてC2H4処理した後、再度
超高真空に排気した後、O2を導入し、１×10-6
Torrの真空度にした後、1100℃で20秒間加熱し
た（20Lの露出量）。以下実施例２と同様にして
フイールドエミツターを得た。Example 4 After C 2 H 4 treatment in the same manner as in Example 2, the mixture was evacuated to an ultra-high vacuum again, and then O 2 was introduced and the mixture was heated to 1×10 -6
After creating a vacuum of Torr, it was heated at 1100°C for 20 seconds (20L exposure volume). Thereafter, a field emitter was obtained in the same manner as in Example 2.
得られたフイールドエミツターは実施例２と同
様のものであつた。 The field emitter obtained was similar to that of Example 2.
発明の効果
本発明の方法によると、炭化チタン単結晶か
ら、優れた安定性を示すフイールドエミツターが
容易に製造することができる。Effects of the Invention According to the method of the present invention, a field emitter exhibiting excellent stability can be easily produced from a titanium carbide single crystal.
第１図はTiC0.96〈110〉フイールドエミツター
の1500℃フラツシユ加熱後の清浄表面からのエミ
ツシヨンパターン、第２図は本発明の方法の処理
を施した後のフイールドエミツターからのエミツ
シヨンパターン、第３図は本発明の方法で製造し
たフイールドエミツターの全電流と時間の関係図
で、第３図ａはH2Ｓガスのみにより表面処理し
た場合、第３図ｂはH2Ｓ処理後、さらにC2H4ガ
ス処理を施した場合を示す。
Figure 1 shows the emission pattern from the clean surface of a TiC 0.96 <110> field emitter after flash heating at 1500°C, and Figure 2 shows the emission pattern from the field emitter after processing according to the method of the present invention. Figure 3 shows the relationship between the total current and time of a field emitter manufactured by the method of the present invention . The case where C 2 H 4 gas treatment was further performed after S treatment is shown.
Claims (1)
1400℃の下で、H2ＳまたはＳを含んだガスによ
る表面処理を施した後、超高真空下で、107Ｖ／
cm以上の強電界を印加することを特徴とする高安
定フイールドエミツターの製造方法。 ２ 炭化チタン単結晶エミツター表面を、900〜
1400℃の下で、H2ＳまたはＳを含んだガスによ
る表面処理とO2による表面処理とを別個にまた
は同時に施した後、超高真空下で、107Ｖ／cm以
上の強電界を印加することを特徴とする高安定フ
イールドエミツターの製造方法。 ３ 炭化チタン単結晶エミツター表面を、900〜
1400℃の下で、H2ＳまたはＳを含んだガスによ
る表面処理とC2H4またはその他の炭化水素ガス
による表面処理とを別個にまたは同時に施した
後、超高真空下で107Ｖ／cm以上の強電界を印加
することを特徴とする高安定フイールドエミツタ
ーの製造方法。 ４ 炭化チタン単結晶エミツター表面を、900〜
1400℃の下で、H2ＳまたはＳを含んだガスによ
る表面処理、O2による表面処理及びC2H4または
その他の炭化水素ガスによる表面処理を別個にま
たは同時に施した後、超高真空下で、107Ｖ／cm
以上の強電界を印加することを特徴とする高安定
フイールドエミツターの製造方法。[Claims] 1. The surface of the titanium carbide single crystal emitter is
After surface treatment with H 2 S or S-containing gas at 1400°C, 10 7 V/
A method for manufacturing a highly stable field emitter characterized by applying a strong electric field of cm or more. 2 The surface of the titanium carbide single crystal emitter is 900~
After performing surface treatment with H 2 S or a gas containing S and surface treatment with O 2 separately or simultaneously at 1400°C, a strong electric field of 10 7 V/cm or more is applied in an ultra-high vacuum. A method for manufacturing a highly stable field emitter characterized by applying an electric current. 3 Titanium carbide single crystal emitter surface with 900 ~
After performing surface treatment with H 2 S or S-containing gas and surface treatment with C 2 H 4 or other hydrocarbon gas separately or simultaneously at 1400°C, 10 7 V under ultra-high vacuum. A method for manufacturing a highly stable field emitter characterized by applying a strong electric field of /cm or more. 4 Titanium carbide single crystal emitter surface with 900 ~
After surface treatment with H 2 S or S-containing gas, O 2 surface treatment, and C 2 H 4 or other hydrocarbon gas at 1400°C, either separately or simultaneously, ultra-high vacuum below, 10 7 V/cm
A method for manufacturing a highly stable field emitter, characterized by applying a strong electric field of the above magnitude.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60168727A JPS6229032A (en) | 1985-07-31 | 1985-07-31 | Manufacture of highly stabilized field emitter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60168727A JPS6229032A (en) | 1985-07-31 | 1985-07-31 | Manufacture of highly stabilized field emitter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6229032A JPS6229032A (en) | 1987-02-07 |
| JPH0533487B2 true JPH0533487B2 (en) | 1993-05-19 |
Family
ID=15873302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60168727A Granted JPS6229032A (en) | 1985-07-31 | 1985-07-31 | Manufacture of highly stabilized field emitter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6229032A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009300070A (en) * | 2008-06-11 | 2009-12-24 | Kingtec Korea Co Ltd | Jacket-type personal cooling device |
-
1985
- 1985-07-31 JP JP60168727A patent/JPS6229032A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6229032A (en) | 1987-02-07 |
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| EXPY | Cancellation because of completion of term |