JPH053138B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a semiconductor device, and particularly relates to a technique that is effective when applied to a semiconductor device having a mounting semiconductor substrate on which a plurality of semiconductor chips of different types are mounted. It is something.

[Background Art] In order to obtain a semiconductor device with high speed, high driving capacity for external elements or external devices, and low power consumption, a bipolar semiconductor element or circuit and a complementary semiconductor element or circuit are integrated into one semiconductor chip. There are devices that have a plurality of different types of semiconductor elements or circuits. (See, for example, Japanese Patent Application No. 58-143859.) The bipolar semiconductor element or circuit is used, for example, in a level conversion circuit, an input/output circuit, which requires a high speed and large driving capacity for an external element or device, Complementary semiconductor devices or circuits are applied to logic circuits and the like, and complementary semiconductor elements or circuits are applied to memory circuits and the like that consume a lot of power.

However, as a result of studying this technology, the inventor found the following problems.

(1) Yield decreases as the degree of integration on a single semiconductor chip increases.

(2) In order to create different types of semiconductor devices or circuits, such as bipolar semiconductor devices or circuits and complementary semiconductor devices or circuits, with a high degree of integration on one semiconductor chip, they must be created using different manufacturing methods. This complicates the manufacturing process.

(3) Even if bipolar type input/output circuits and level conversion circuits with high-speed, high-drive operation are used, the driving force for external devices cannot be improved due to their placement positions, and the operating speed of circuit systems that include semiconductor devices is reduced. It is not possible to improve the situation.

[Object of the Invention] An object of the present invention is to provide a technology that allows easy fabrication of a semiconductor device for a system including various types of semiconductor elements or circuits.

Another object of the present invention is to provide a technique that can improve the yield of a highly integrated semiconductor device comprising a plurality of semiconductor elements or circuits of different types.

Another object of the present invention is to provide a technique that can improve the operating speed of a circuit system including a semiconductor device.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Summary of the Invention] A brief overview of typical inventions disclosed in this application is as follows.

That is, in a highly integrated semiconductor device consisting of a plurality of semiconductor elements or circuits of different types, wiring and a first type of semiconductor element or circuit are formed on a semiconductor substrate for mounting a semiconductor chip, and the wiring and a second type of semiconductor element or circuit are formed on a semiconductor substrate for mounting a semiconductor chip.
A semiconductor chip having various types of semiconductor elements or circuits is connected by a protruding electrode, and the wiring is electrically connected to an external device connection lead provided on a sealing substrate by a bonding wire or a protruding electrode. This makes it easy to create a multi-product system.
Moreover, the yield of the system is improved.

Hereinafter, the structure of the present invention will be explained together with a semiconductor device according to an embodiment of the present invention applied to a microcomputer.

[Embodiment] FIG. 1 is a plan view of a semiconductor device according to an embodiment of the present invention with a sealing cap removed and wiring omitted, and FIG. 2 is a sectional view taken along the - cutting line in FIG. 1.

In addition, in all the figures of the embodiment, parts having the same functions are given the same reference numerals, and repeated explanations thereof will be omitted.

1 and 2, reference numeral 1 denotes a sealing (package) substrate, which is made of alumina. This sealing substrate 1 is provided with wiring (not shown), bonding pads 2, and lead pins 3 for electrical connection to external devices. Reference numeral 4 denotes a mounting semiconductor substrate (mother chip) on which the semiconductor chip 5 is mounted, and is made of single crystal silicon in order to have the same coefficient of thermal expansion as the semiconductor chip 5. This tower-mounted semiconductor substrate 4
For example, a bipolar type input/output circuit (or level conversion circuit, interface circuit, etc.) 6, which has high speed and large driving capacity to external elements or devices,
A logic circuit 7 and the like are formed. As these bipolar semiconductor elements or circuits, for example, a circuit configuration such as a non-saturated ECL (emiter coupled logic) can be applied. Further, a wiring (not shown) is formed in the wiring region 8, and a bonding pad 9 is formed around the wiring. The mounting semiconductor substrate 4 is bonded to the center of the sealing substrate 1 with an adhesive, and the bonding pads 2 and 9 are electrically connected with a bonding wire 10.

The semiconductor chip 5 is, for example, a ROM (read
RAM (random access)
Low power consumption complementary memory circuit 11 such as
and 12 are formed. This semiconductor chip 4
is electrically connected to the mounting semiconductor substrate 4 by a protruding electrode 13 having good wettability such as solder.

In this way, the bipolar input/output circuit 6 and the logic circuit 7, which have a large driving capacity to external elements or devices at high speed, are formed in advance on the semiconductor substrate 4 for mounting, and the memory circuit 11 or the logic circuit 7 with low power consumption is formed in advance. By electrically connecting the semiconductor chip 5 provided with the semiconductor chip 12 to the mounting semiconductor substrate 4 via the protruding electrodes 13, various types of semiconductor elements or circuit systems can be easily formed. That is, the functions of the system are divided, and predetermined types of semiconductor elements or circuits for each divided function are created on the mounting semiconductor substrate 4 or the semiconductor chip 5, respectively.
By assembling them, various types of semiconductor devices including various semiconductor elements or circuits can be easily manufactured.

In addition, the system formed on one semiconductor chip 4 is divided by function to create a semiconductor chip having semiconductor elements or circuits for each function,
By combining these, the wafer can be divided into small semiconductor chips, thereby improving the yield of the system.

In addition, it is sufficient that the complementary semiconductor chip 5 can drive only the inside of the module, and the driving ability for external elements or devices can be achieved by the bipolar semiconductor element or circuit on the mounting semiconductor substrate 4. Even if the semiconductor chip 5 is used, it is possible to realize a device with a high speed and a large driving capacity for external elements or devices.

In addition, for example, the memory circuit 11 with large power consumption
And 12, since complementary semiconductor elements or circuits with low power consumption can be used, a semiconductor device with low power consumption can be obtained.

Further, by standardizing the mounting semiconductor substrate 4, cost performance can be improved.

[Example] FIG. 3 is a plan view showing the layout of a mounting semiconductor substrate and wiring area of a semiconductor device according to an example of the present invention, and FIG. 4 is a sectional view taken along the - cutting line in FIG. 3. be.

As shown in FIGS. 3 and 4, this embodiment is a modification of the first embodiment, and the wiring area 8 of the mounting semiconductor substrate 4 is formed by using multilayer wiring technology.
This is expanded to include bipolar semiconductor circuits such as the input/output circuit 7 and the level conversion circuit 14.

By enlarging the wiring area 8 in this way,
Since the area in which the complementary semiconductor chips 5 can be arranged is expanded, the ratio of the complementary semiconductor chips 5 to the mounting semiconductor substrate 4 can be improved. That is, since a large number of complementary semiconductor chips 5 of effective semiconductor elements can be provided, it is possible to realize a large-scale integrated circuit semiconductor device with relatively low power consumption and a large drive capability for external elements or devices.

In addition, in the second embodiment, as shown in FIG.
A bipolar level conversion circuit 1 arranged near two opposing sides and capable of high-speed, high-drive operation.
4 and 14 are arranged near the other two sides. This makes it possible to shorten the distance between the external device and the bipolar input/output circuit 7 and the bipolar level conversion circuit 14, thereby improving the driving force for the external device. It has become possible to improve the operating speed of the circuit system that has.

[Effects] As explained above, according to the novel technology disclosed in this application, the following effects can be obtained.

(1) Bipolar level conversion circuits, input/output circuits, and logic circuits with high driving capacity for high-speed external elements or external devices are formed in advance on the semiconductor substrate for mounting, and a memory circuit with low power consumption is provided. By creating a structure in which a semiconductor chip is electrically connected to a mounting semiconductor substrate via a flip-chip protruding electrode, a wide variety of systems using a variety of semiconductor elements or circuits can be easily formed. can do. In other words, by dividing the functions of a system, creating mounting semiconductor substrates and semiconductor chips with each function, and assembling them using the flip-chip method, semiconductor devices for a wide variety of systems can be easily fabricated. Obtainable.

(2) The above (1) simplifies system design.

(3) By dividing the functions of the system, creating semiconductor chips for each function, and combining them, it is possible to divide the wafer into smaller pieces, thereby improving the yield of the system.

(4) According to (1) above, it is sufficient that the semiconductor chip can drive only the inside of the module, and the driving ability for external elements or devices can be achieved by bipolar semiconductor elements or circuits on the semiconductor substrate for mounting, so standard Even if complementary semiconductor chips are used,
A large driving capacity for external elements or devices can be realized.

(5) According to (1) above, complementary semiconductor elements or circuits can be used, so a semiconductor device with low power consumption can be obtained.

(6) In (1) above, if the semiconductor substrate for mounting is standardized, cost performance can be improved.

(7) By expanding the wiring area to the top of the bipolar semiconductor element or circuit provided on the substrate for mounting, the area in which complementary semiconductor chips can be placed is expanded, so it is possible to The ratio of semiconductor substrates can be improved. (8)
According to (7) above, it is possible to provide a large number of complementary semiconductor chips for effective semiconductor elements, so it is possible to realize a large-scale integrated circuit semiconductor device with relatively low power consumption and a large drive capability for external elements or devices.

(9) By arranging the high-speed, high-drive bipolar input/output circuit and the high-speed, high-drive bipolar level conversion circuit around the main surface of the tower-mounted semiconductor substrate, external devices and bipolar Since the distance between the input/output circuit and the level conversion circuit can be shortened, the driving force for external devices can be improved, and the operating speed of a circuit system including a semiconductor device can be improved.

Although the present invention has been specifically explained above based on the examples, it goes without saying that the present invention is not limited to the above-mentioned examples and can be modified in various ways without departing from the gist thereof. .

For example, in the embodiment described above, the present invention was applied to a microcomputer.
Needless to say, it can be applied to other systems as well.

[Brief explanation of the drawing]

1 is a plan view of a semiconductor device according to an embodiment of the present invention with the sealing cap removed and wiring omitted; FIG. 2 is a sectional view taken along the - cutting line in FIG. 1; and FIG. 4 is a plan view showing the layout of a mounting board and wiring area of a semiconductor device according to an embodiment of the present invention, and FIG. 4 is a sectional view taken along the - cutting line in FIG. 3. In the figure, 1...Sealing substrate, 2...Bonding pad, 3...Lead pin, 4...Semiconductor substrate for mounting, 5...Semiconductor chip, 6...Bipolar logic circuit, 7...Bipolar Type input/output circuit, 8...
...Wiring area, 9...Bonding pad, 10...
. . . bonding wire, 11, 12 . . . complementary storage circuit, 13 . . . projecting electrode, 14 .

Claims (1)

[Claims] 1. A sealing substrate, a semiconductor chip mounting semiconductor substrate mounted on the sealing substrate, and a multilayer wiring region formed in the center of the semiconductor chip mounting semiconductor substrate via a protruding electrode. A complementary memory circuit is formed on the semiconductor chip, and a semiconductor chip is electrically connected to an external element or an external device around the main surface of the semiconductor substrate for mounting the semiconductor chip. A semiconductor device characterized by having a bipolar input/output circuit with high-speed, high-drive operation and a level conversion circuit arranged therein.