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JPH054813B2 - - Google Patents
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JPH054813B2 - - Google Patents

Info

Publication number
JPH054813B2
JPH054813B2 JP61281074A JP28107486A JPH054813B2 JP H054813 B2 JPH054813 B2 JP H054813B2 JP 61281074 A JP61281074 A JP 61281074A JP 28107486 A JP28107486 A JP 28107486A JP H054813 B2 JPH054813 B2 JP H054813B2
Authority
JP
Japan
Prior art keywords
bonding
wire
semiconductor pellet
package member
bonding pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61281074A
Other languages
Japanese (ja)
Other versions
JPS63133638A (en
Inventor
Hiroaki Kobayashi
Akira Kuromaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP61281074A priority Critical patent/JPS63133638A/en
Publication of JPS63133638A publication Critical patent/JPS63133638A/en
Publication of JPH054813B2 publication Critical patent/JPH054813B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07551Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5445Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5449Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) 本発明は半導体装置のワイヤボンデイング方
法、特にワイヤボンデイングに方向性のある、い
わゆるウエツジボンデイングのワイヤボンデイン
グ方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Field of Application) The present invention relates to a wire bonding method for semiconductor devices, and particularly to a wire bonding method of so-called wedge bonding, which has directionality in wire bonding.

(従来の技術) 従来、上記ボンデイング方法としては、例えば
特公昭61−20134号公報等が提案されている。
(Prior Art) Conventionally, the bonding method described above has been proposed, for example, in Japanese Patent Publication No. 61-20134.

これを第4図に基づいて説明すると、試料であ
る半導体ペレツト1とパツケージ部材3を回転さ
せて、半導体ペレツト1のボンデイングパツト2
とパツケージ部材3のボンデイングリード4との
間にウエツジツールを往復させてワイヤ5のボン
デイングを行うのであるが、この場合、ボンデイ
ングパツド2とボンデイングリード4とを結ぶル
ープ方向直線とウエツジツールの進行方向とを一
致させる必要がある。このため、半導体ペレツト
1の位置ずれとパツケージ部材3の位置ずれを含
んだ上記ループ方向直線がウエツジツールの進行
方向、即ちUSトランジユーサに振幅方向と一致
するように試料を回転させることでボンデイング
を可能ならしめている。このループ方向直線とウ
エツジツールの進行方向とのなす角度θNは、通常
パターン認識装置により半導体ペレツトの2ケ所
の位置を認識してΔx、Δyの基準座標(予め記憶
させた座標)からのずれ量を求め、X、Y、θの
各方向のずれ量を算出し、この算出されたずれ量
により各ボンデイングパツド2とボンデイングリ
ード4の位置を算出するとともに、ボンデイング
のループ方向のX−Y座標軸からの傾きにより求
められる。
To explain this based on FIG. 4, by rotating the semiconductor pellet 1 which is a sample and the package member 3,
The wire 5 is bonded by reciprocating the wedge tool between the bonding pad 2 and the bonding lead 4 of the package member 3. In this case, the straight line in the loop direction connecting the bonding pad 2 and the bonding lead 4 and the direction of movement of the wedge tool are need to match. Therefore, it is possible to perform bonding by rotating the sample so that the loop direction straight line, which includes the positional deviation of the semiconductor pellet 1 and the positional deviation of the package member 3, coincides with the advancing direction of the wedge tool, that is, the amplitude direction of the US transducer. It's tight. The angle θ N between this straight line in the loop direction and the advancing direction of the wedge tool is determined by the amount of deviation from the standard coordinates (pre-memorized coordinates) of Δx and Δy by recognizing the two positions of the semiconductor pellet using a pattern recognition device. The amount of deviation in each direction of X, Y, and θ is calculated, and the position of each bonding pad 2 and bonding lead 4 is calculated based on the calculated amount of deviation, and the X-Y coordinate axis in the bonding loop direction is calculated. It is determined by the slope from .

次に、ボンデイングしようとするループ方向
を、試料を前記角度θNだけ回転させることによ
り、ウエツジツールの進行方向(X−Y座標のY
軸に一致)に合せるとともに、回転したことによ
りX−Y方向に移動する分を算出して、回転後の
ボンデイングパツド2上にウエツジツールを移動
させてボンデイングを行う。
Next, by rotating the sample by the angle θN , the direction of the loop in which bonding is to be performed is adjusted in the direction of movement of the wedge tool (Y of the X-Y coordinates).
At the same time, the amount of movement in the X-Y direction due to the rotation is calculated, and the wedge tool is moved over the rotated bonding pad 2 to perform bonding.

そして、順次、回転とXY移動→ボンデイング
パツド2へのボンデイング→XY移動→ボンデイ
ングリード4へのボンデイング→回転とXY移動
→次のボンデイングパツド2へのボンデイング、
というように次々とボンデイングを行うものであ
つた。
Then, sequentially, rotation and XY movement → bonding to bonding pad 2 → XY movement → bonding to bonding lead 4 → rotation and XY movement → bonding to the next bonding pad 2,
In this way, bonding was performed one after another.

この場合、ボンデイング位置の精度から、一般
にボンデイングパツド2のピツチBは150μm、
その幅Cは100μm程度必要で、200ピンのゲート
アレイで半導体ペレツト1の4辺にボンデイング
パツド2を並べると、半導体ペレツト1のサイズ
Aは、 A=1/4×200(pin)×0.15(mm)=7.5(mm) 程度の大きさであつた。
In this case, due to the accuracy of the bonding position, the pitch B of the bonding pad 2 is generally 150 μm,
Its width C is required to be about 100 μm, and if bonding pads 2 are arranged on the four sides of semiconductor pellet 1 in a 200-pin gate array, the size A of semiconductor pellet 1 is A = 1/4 x 200 (pin) x 0.15. The size was approximately (mm) = 7.5 (mm).

(発明が解決しようとする問題点) 近時、半導体製品の多ピン化により高密度でボ
ンデイングする必要性が増大し、ボンデイングパ
ツドのピツチを縮小しないと半導体ペレツトのサ
イズが必要以上に大きくなりコストが増大する。
また半導体ペレツトサイズの縮小によるコストダ
ウンを図る場合においても同様にボンデイングパ
ツド周辺のサイズにより制限を受ける。
(Problems to be Solved by the Invention) Recently, as the number of pins in semiconductor products has increased, the need for high-density bonding has increased, and unless the pitch of bonding pads is reduced, the size of semiconductor pellets will become larger than necessary. Costs increase.
Furthermore, even when attempting to reduce the cost by reducing the size of the semiconductor pellet, there are similar limitations depending on the size of the area around the bonding pad.

このため、ボンデイングパツドピツチやボンデ
イングパツドサイズの縮小を実現するために大き
な障害となつているのは、ボンデイング位置の精
度で、目標とするボンデイング位置から回転方向
のずれ等により外れると、ボンデイングパツドあ
るいはボンデイングリードから接合部がはみ出
し、接合不良や配線のシヨート等が生じてしま
う。
Therefore, a major obstacle to reducing the bonding pad pitch and bonding pad size is the accuracy of the bonding position. The bonded portion protrudes from the pad or bonding lead, resulting in poor bonding and short wiring.

しかしながら、上記従来例においては、位置ず
れの要因として、パターン認識の誤差やX−Yテ
ーブルの精度等、一般のボンデイング装置と同様
の要因と、回転試料の位置決め精度や回転分解能
等のウエツジボンデイング装置特有の要因があ
り、試料の大型化により誤差が増大する。更に、
回転後のX−Y座標を計算しなくてはならないた
め、計算誤差も加わつてしまうといつた問題点が
あつた。
However, in the above conventional example, the causes of positional deviation are the same factors as in general bonding equipment, such as pattern recognition errors and the accuracy of the There are factors specific to the equipment, and errors increase as the sample size increases. Furthermore,
Since the X-Y coordinates after rotation had to be calculated, there was a problem in that calculation errors were added.

本発明は上記問題点に鑑み、ウエツジボンデイ
ングにおけるボンデイング位置の精度を高め、ボ
ンデイング密度を上げて、より微細な半導体装置
を提供するとともに、半導体ペレツト及び半導体
装置の面積を縮小し、特に多ピンのLSIやゲート
アレイなどのコストの低減を目的としたものであ
る。
In view of the above-mentioned problems, the present invention improves the accuracy of bonding positions in wedge bonding, increases bonding density, provides finer semiconductor devices, reduces the area of semiconductor pellets and semiconductor devices, and, in particular, improves the accuracy of bonding positions in wedge bonding. The aim is to reduce the cost of LSIs and gate arrays.

〔発明の構成〕[Structure of the invention]

(問題点を解決するための手段と作用) 本発明は上記ボンデイング位置の精度を高める
にあたり、大きな障害となつている回転方向の誤
差要因を排除するため、試料を回転させループ方
向をウエツジツール方向に略一致させた後に、位
置ずれの検出を行いボンデイングを実行するもの
であり、ループ方向を平行にそろえたボンデイン
グパツド及びボンデイングリードの配置として、
そろえたグループ毎に回転と回転後の位置ずれの
検出を行うようにすることもできる。
(Means and effects for solving the problem) In order to improve the accuracy of the bonding position described above, the present invention rotates the sample so that the loop direction is in the direction of the wedge tool, in order to eliminate the error factor in the rotation direction, which is a major obstacle. After almost matching, positional deviation is detected and bonding is performed, and the bonding pad and bonding lead are arranged so that the loop directions are parallel to each other.
It is also possible to detect rotation and positional deviation after rotation for each group.

また、ループ方向を半導体ペレツトの一辺と平
行にそろえることにより、ワイヤの幅方向につい
てボンデイングパツドのサイズを更に縮小するよ
うにすることができ、ボンデイングパツドの形状
を、正方形からワイヤの幅方向を縮小した長方形
とすることができ、ボンデイングパツドのピツチ
の縮小を容易にすることができるものである。
In addition, by aligning the loop direction parallel to one side of the semiconductor pellet, the size of the bonding pad can be further reduced in the width direction of the wire, and the shape of the bonding pad can be changed from a square to a shape in the width direction of the wire. The bonding pad can be made into a reduced rectangular shape, and the pitch of the bonding pad can be easily reduced.

(実施例) 第1図乃至第3図は本発明の一実施例を示し、
半導体ペレツト1の周囲にはボンデイングパツド
2が、パツケージ部材3にはボンデイングリード
4が夫々形成され、このボンデイングパツド2と
ボンデイングリード4とはボンデイングワイヤ5
で接続されているとともに、パツケージ封止部材
6により封止されている。
(Example) FIGS. 1 to 3 show an example of the present invention,
A bonding pad 2 is formed around the semiconductor pellet 1, and a bonding lead 4 is formed on the package member 3, and the bonding pad 2 and the bonding lead 4 are connected to a bonding wire 5.
and is sealed by a package sealing member 6.

このワイヤ5の接合部は、超音波により上下方
向に潰れており、この潰れた形状はワイヤ5の長
さ方向と幅方向とで2対1程度となつており、ワ
イヤ5が26Φμmを使用した時には、80μm対40μ
m程度で、この形状に見合つた100μm対60μm
(幅C=60μm)の長方形のボンデイングパツド
2の大きさとしている。また、ボンデイングパツ
ド2のピツチBは80μmとし、これにより200ピ
ンのゲートアレイで半導体ペレツト1の4辺のボ
ンデイングパツド2をならべたときの半導体ペレ
ツト1のサイズAは、 A=1/4×200(pin)×0.08(mm)=4(mm) としている。このように、従来のものと比較して
小形化を図ることができるのは以下のように、位
置精度が高いからである。
The bonded portion of the wire 5 is crushed in the vertical direction by the ultrasonic waves, and this crushed shape is about 2:1 in the length direction and width direction of the wire 5, and the wire 5 uses 26Φμm. Sometimes 80μm vs. 40μm
100μm vs. 60μm, which is suitable for this shape.
The bonding pad 2 has a rectangular size (width C=60 μm). In addition, the pitch B of the bonding pad 2 is 80 μm, so that the size A of the semiconductor pellet 1 when the bonding pads 2 on the four sides of the semiconductor pellet 1 are lined up in a 200-pin gate array is A = 1/4. ×200 (pin) × 0.08 (mm) = 4 (mm). The reason why the size can be reduced compared to the conventional one is because of the high positional accuracy as described below.

即ち、半導体ペレツト1及びパツケージ部材3
の位置ずれと、その検出補正について、平面的な
模式図である第1図に基づいて説明する。
That is, the semiconductor pellet 1 and the package member 3
The positional deviation and its detection correction will be explained based on FIG. 1, which is a schematic plan view.

通常、パツケージ部材3の位置L′は、メモリし
たボンデイング位置座標l1〜l4の中心xyからず
れを生じ、その中心Lはθ方向にθLの傾きがあ
る。また、半導体ペレツト1の位置P′は、同じく
メモリしたボンデイング位置座標p1〜p4の中心
xyからずれを生じ、その中心pはθ方向にθp
傾きがある。
Normally, the position L' of the package member 3 deviates from the center xy of the memorized bonding position coordinates l1 to l4 , and the center L has an inclination of θL in the θ direction. Furthermore, the position P' of the semiconductor pellet 1 is the center of the bonding position coordinates p 1 to p 4 which are also memorized.
A deviation occurs from xy , and the center p has an inclination of θ p in the θ direction.

この両位置P′、L′にある試料1、5を回転させ
る中心Oxyは、上記ボンデイング座標p1〜p4、l1
〜l4の中心と略一致させるように、予め座標修正
Mを行う。なお、本実施例においては、この修正
に多小の誤差があつてもボンデイング位置のずれ
を生じないが、パターン認識のためのカメラ中心
(図示せず)とウエツジツールの中心の距離は、
ボンデイング位置のずれの原因となるため、正確
に合せてメモリしておく必要があることは従来と
同様である。
The center O xy of rotating the samples 1 and 5 at both positions P' and L' is the bonding coordinate p 1 to p 4 , l 1
Coordinate correction M is performed in advance so that it approximately coincides with the center of ~ l4 . In this embodiment, even if there is a small error in this correction, the bonding position will not shift, but the distance between the center of the camera (not shown) for pattern recognition and the center of the wedge tool is
As is the case with the prior art, it is necessary to match the bonding position accurately and store it in memory, as this may cause a shift in the bonding position.

そして、半導体ペレツト1の位置P′の2ケ所と
パツケージ部材3の位置L′の2ケ所のパターン認
識を実行し、4ケ所のずれ量から、ボンデイング
パツド2の1のボンデイング位置p1′とボンデイ
ングリード4の1のボンデイング位置l1′のXY方
向の位置ずれΔxp、Δyp及びΔxL、ΔyLを計算し、
p3′とl3′とを結ぶ線分(ループ方向)が基準座標
軸X−Yとのなす角θ3を求める。
Then, pattern recognition is performed at two positions, position P' of semiconductor pellet 1 and position L' of package member 3, and bonding position p 1 ' of bonding pad 2 and position L' of bonding pad 2 are determined from the amount of deviation at the four positions. Calculate the positional deviations Δx p , Δy p and Δx L , Δy L in the XY direction of bonding position l 1 ' of bonding lead 4,
The angle θ 3 formed by the line segment (loop direction) connecting p 3 ′ and l 3 ′ with the reference coordinate axis XY is determined.

次に、両試料の位置P′、L′を、上記角度θ3回転
させるとともに、このθ3回転させた時の、再度パ
ターン認識のための、メモリした位置座標から計
算するターゲツト予想位置に、カメラをX−Y移
動させ、上記θ3回転後のターゲツトの2ケ所のパ
ターン認識を行う。このカメラ中心とウエツジツ
ール中心の距離にθ3回転後の位置ずれ量を加味し
て、ウエツジツールをボンデイングパツド2の1
のボンデイング位置P1′に移動させ、順次p1′と
l1′、p2′とl2′……p4′とl4′のワイヤボンデイング

行うが、その間θ回転は固定である。
Next, the positions P' and L' of both samples are rotated by the above angle θ 3 , and when rotated by θ 3 , the target position is again calculated from the memorized position coordinates for pattern recognition. The camera is moved in the X-Y direction, and pattern recognition is performed at two locations on the target after the θ 3 rotation described above. Adding the amount of positional deviation after θ 3 rotations to the distance between the camera center and wedge tool center, move the wedge tool to 1 of bonding pad 2.
to the bonding position P 1 ′, and then sequentially press p 1 ′ and
Wire bonding is performed between l 1 ′, p 2 ′ and l 2 ′...p 4 ′ and l 4 ′, but the θ rotation is fixed during that time.

図示のθ3とθ4は線分p3′〜p4′とl3′〜l4′が等し
く、
p3′〜l3′とp4′〜l4′が異なることから分るように一
致しないが、自動ダイボンデイング装置によるパ
ツケージ部材への半導体ペレツトボンデイング精
度が一定レベルにあり、ダイボンデイング誤差
(θp+θL)が±2°程度に充分収まり、θ3とθ4との

差が極微少角になつている。このため、ボンデイ
ングリード4の面積にある程度余裕がある本実施
例では、リード座標のずれを無視してウエツジツ
ールの方向にボンデイングしても実害がない。
In the illustrated θ 3 and θ 4 , the line segments p 3 ′ to p 4 ′ and l 3 ′ to l 4 ′ are equal,
As can be seen from the difference between p 3 ′ to l 3 ′ and p 4 ′ to l 4 ′, they do not match, but the accuracy of semiconductor pellet bonding to the package member by the automatic die bonding equipment is at a certain level, and the die bonding error (θ pL ) is well within about ±2°, and the error between θ 3 and θ 4 is an extremely small angle. Therefore, in this embodiment, where the area of the bonding lead 4 has a certain margin, there is no actual harm in bonding in the direction of the wedge tool, ignoring the deviation of the lead coordinates.

なお、本実施例ではボンデイングリード4を2
段としているが、ボンデイングリードの面積に余
裕のない場合には、リード座標のずれを無視せ
ず、ウエツジツールの方向と異なるループ方向に
ワイヤを張る場合もあるが、微少角のため実害が
ない。
Note that in this embodiment, the bonding lead 4 is
However, if there is not enough space for the bonding lead, the wire may be stretched in a loop direction that is different from the direction of the wedge tool without ignoring the deviation of the lead coordinates, but since the angle is small, there is no real harm.

本実施例では、試料1、3を4つのグループに
分け、これを90°ずつ回転させて、それぞれの回
転後のパターン認識とグループ内のボンデイング
を行つているが、逆方向となる反対側のループ方
向も平行であるから、4つのグループを2つのグ
ループに統合して、グループの半分はボンデイン
グパツドからボンデイングリードにボンデイング
し、反対側の半分はボンデイングリードからボン
デイングパツドにボンデイングすることにより、
パターン認識と試料回転の時間を半分に減らすよ
うにすることもできる。この場合、生産性の向上
を図ることができるとともに、試料の回転範囲が
90°+αの小さな回転で済み、試料を加熱するた
めのヒータを試料に備える場合等に有利となる。
In this example, samples 1 and 3 are divided into four groups, which are rotated by 90 degrees, and pattern recognition and bonding within the group are performed after each rotation. Since the loop directions are also parallel, the four groups are combined into two groups, and one half of the group is bonded from the bonding pad to the bonding lead, and the other half is bonded from the bonding lead to the bonding pad. ,
It is also possible to cut the time for pattern recognition and sample rotation in half. In this case, productivity can be improved and the rotation range of the sample can be improved.
A small rotation of 90° + α is sufficient, which is advantageous when the sample is equipped with a heater for heating the sample.

なお、パターン認識の回数は、機械的な位置決
め精度、パツケージ部材側製作精度等の良否によ
り増減させ、例えば半導体ペレツト側のみのパタ
ーン認識、あるいは半導体ペレツト側の各2ケ
所、ペレツト側の各1ケ所としても良い。
The number of pattern recognitions may be increased or decreased depending on mechanical positioning accuracy, manufacturing accuracy on the package member side, etc. For example, pattern recognition may be performed only on the semiconductor pellet side, or pattern recognition may be performed at two locations each on the semiconductor pellet side or at one location each on the pellet side. It's good as well.

また、本実施例では、ワイヤボンデイングによ
り接続しているが、リボンによるボンデイングパ
ツドとボンデイングリードとの接続、あるいはテ
ープによるボンデイングパツドの接続に応用する
こともできる。
Further, in this embodiment, the connection is made by wire bonding, but the present invention can also be applied to connection between a bonding pad and a bonding lead using a ribbon, or a connection between a bonding pad and a bonding pad using a tape.

〔発明の効果〕〔Effect of the invention〕

本発明は上記のような構成であるので、試料を
回転させることにより生ずる、回転機構のバツク
ラツシ、回転位置検出の誤差、回転中心を求めて
座標中心を修正する誤差、電気的位置決め誤差、
座標の回転した位置を求める計算誤差等の種々の
誤差を無くして、位置精度の高いボンデイングを
実現することができ、特に大形化し、回転半径の
大きな試料(半導体装置)に顕著にこの効果が現
れる。
Since the present invention has the above-mentioned configuration, it is possible to eliminate the problems caused by rotation of the sample, such as backlash of the rotation mechanism, errors in rotational position detection, errors in correcting the coordinate center by determining the center of rotation, errors in electrical positioning,
It is possible to achieve bonding with high positional accuracy by eliminating various errors such as calculation errors in determining the rotated position of coordinates, and this effect is particularly noticeable for large samples (semiconductor devices) with a large rotation radius. appear.

このように、位置精度を向上させることによ
り、半導体製品のボンデイングパツド周辺サイズ
の縮小を図ることができ、半導体ペレツトサイズ
の縮小によるコストダウンと、パツケージの小型
化を実現することができる。
In this way, by improving the positional accuracy, it is possible to reduce the size of the periphery of the bonding pad of a semiconductor product, and it is also possible to reduce costs by reducing the size of the semiconductor pellet and to make the package smaller.

なお、半導体ペレツトの一辺と平行に接続する
ことにより生ずる、ボンデイングパツドの幅方向
の縮小は、ネイルヘツドボンデイング(ボールボ
ンデイング)等にはない利点で、ウエツジボンデ
イングゆえの利点であるが、従来のように各ワイ
ヤ毎に回転させていたのでは、精度低下のためこ
の利点を生かすことができなかつたが、本発明に
よりこの利点を充分生かすことが可能であるとい
つた効果がある。
Note that the reduction in the width direction of the bonding pad caused by connecting it parallel to one side of the semiconductor pellet is an advantage that nail head bonding (ball bonding) does not have, and is an advantage of wedge bonding. If the wires were rotated for each wire as shown in the figure, this advantage could not be taken advantage of due to a decrease in accuracy, but the present invention has the effect that it is possible to make full use of this advantage.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図乃至第3図は本発明の一実施例を示し、
第1図は半導体ペレツトとパツケージ部材との位
置ずれの補正の状態を模式的に示す平面図、第2
図はボンデイング後の半導体装置を示す平面図、
第3図は同じく断面図、第4図は従来例を示す第
2図相当図である。 1……半導体ペレツト、2……ボンデイングパ
ツド、3……パツケージ部材、4……ボンデイン
グリード、5……ワイヤ。
1 to 3 show an embodiment of the present invention,
FIG. 1 is a plan view schematically showing the state of correction of positional deviation between the semiconductor pellet and the package member, and FIG.
The figure is a plan view showing the semiconductor device after bonding.
FIG. 3 is a sectional view, and FIG. 4 is a view corresponding to FIG. 2, showing a conventional example. DESCRIPTION OF SYMBOLS 1... Semiconductor pellet, 2... Bonding pad, 3... Package member, 4... Bonding lead, 5... Wire.

Claims (1)

【特許請求の範囲】 1 パツケージ部材と半導体ペレツトを回転さ
せ、パツケージ部材と半導体ペレツトの接続位置
をボンデイング工具の方向に合わせワイヤでボン
デイングを行うワイヤボンデイング方法におい
て、ボンデイングしようとするループ方向と基準
座標軸とのなす角θを検出し、この第一情報によ
りパツケージ部材と半導体ペレツトをθ回転さ
せ、しかる後、再度少なくとも前記半導体ペレツ
トのX、Y及びθ方向の位置を検出して、X、Y
方向の位置情報を補正して第二情報となし、この
第二情報によりボンデイング工具を第1のボンデ
イング位置から第2のボンデイング位置まで移動
させてワイヤのボンデイングを行うことを特徴と
するワイヤボンデイング方法。 2 パツケージ部材のボンデイングリードと半導
体ペレツトのボンデイングパツドを、ワイヤを接
続する方向が平行又は近似的に平行なグループに
グループ分けし、このグループ毎にθ方向の補正
回転を行つた後、各グループについての位置を検
出し、この位置情報により前記各グループのボン
デイングを行うことを特徴とする特許請求の範囲
第1項記載のワイヤボンデイング方法。
[Claims] 1. In a wire bonding method in which a package member and a semiconductor pellet are rotated, the connection position between the package member and the semiconductor pellet is aligned in the direction of a bonding tool, and bonding is performed using a wire, the direction of the loop to be bonded and the reference coordinate axis are determined. The package member and the semiconductor pellet are rotated by θ based on this first information, and then the position of at least the semiconductor pellet in the X, Y, and θ directions is detected again, and the
A wire bonding method characterized by correcting positional information in the direction to obtain second information, and bonding the wire by moving a bonding tool from a first bonding position to a second bonding position based on the second information. . 2. Divide the bonding leads of the package member and the bonding pads of the semiconductor pellet into groups in which the wire connection directions are parallel or approximately parallel, perform a correction rotation in the θ direction for each group, and then 2. The wire bonding method according to claim 1, further comprising detecting a position of the wire and bonding each group based on this position information.
JP61281074A 1986-11-26 1986-11-26 Wire bonding Granted JPS63133638A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61281074A JPS63133638A (en) 1986-11-26 1986-11-26 Wire bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61281074A JPS63133638A (en) 1986-11-26 1986-11-26 Wire bonding

Publications (2)

Publication Number Publication Date
JPS63133638A JPS63133638A (en) 1988-06-06
JPH054813B2 true JPH054813B2 (en) 1993-01-20

Family

ID=17633956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61281074A Granted JPS63133638A (en) 1986-11-26 1986-11-26 Wire bonding

Country Status (1)

Country Link
JP (1) JPS63133638A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5176557B2 (en) * 2007-03-19 2013-04-03 三菱電機株式会社 Electrode pattern and wire bonding method

Also Published As

Publication number Publication date
JPS63133638A (en) 1988-06-06

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