JPH0548299B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to improvements in ion plating apparatus.

[Prior Art] As a conventional ion plating apparatus, one having the structure described below is known.

a vacuum chamber, a substrate holder provided in the chamber, an evaporation source arranged in the chamber for evaporating the evaporation material in the crucible by electron beam irradiation, and an evaporation source arranged on the side wall of the chamber from the evaporation source. An ion plating device consisting of a hollow cathode gun for irradiating plasma onto the evaporated deposition material. In such an apparatus, a film is formed by irradiating the evaporation material evaporated from the evaporation source with plasma from a hollow cathode gun, thereby depositing the ionized evaporation material onto the substrate of the holder.

A vacuum chamber, a substrate holder provided in this chamber, a magnet placed on a side opposite to the substrate holding side of this holder, and a material for evaporation in a crucible placed in the chamber by electron beam irradiation. An ion plating apparatus comprising: an evaporation source; and a plasma gun provided on a side wall of the chamber for drawing plasma into the chamber. In such a device,
Plasma drawn into the chamber from the plasma gun is collected on the surface of the substrate held in the holder by the magnetic field of a magnet placed in the holder, and the evaporation material evaporated from the evaporation source and directed toward the substrate is ionized by the plasma. Film formation is performed by vapor depositing an ionized vapor deposition material onto a substrate.

[Problems to be Solved by the Invention] However, in the above-mentioned ion plating apparatus, the shape of the plasma is fixed depending on the strength of the magnetic field, etc., so the evaporation material ionized by the plasma is ionized by the plasma into a complex shape with unevenness, etc. It cannot be expected to wrap around the entire board. In addition, in the above-mentioned ion plating apparatus, the plasma drawn into the chamber from the plasma gun can be collected on the substrate surface by the magnetic field of the magnet placed on the opposite side of the holder substrate. It is almost impossible to expect that it will wrap around the entire board with a complicated shape such as unevenness.
This is because changing the magnetic field only increases or decreases the spread of the entire plasma, but cannot change the directionality of the plasma.

The present invention has been made in order to solve the above-mentioned conventional problems, and aims to provide an ion plating apparatus that can efficiently form a uniform film over the entire surface of a complex-shaped substrate.

[Means for Solving the Problems] The present invention includes a vacuum chamber, a substrate holder disposed within the chamber, a deposition source disposed within the chamber, and a method for introducing plasma into the chamber. a plasma generation source, and an air core provided on the outside of the chamber corresponding to the outer periphery of the plasma generation source and on the outside of the chamber facing the plasma generation source, for focusing the plasma drawn into the chamber. a magnet, a counter electrode disposed in the chamber and containing a magnet for focusing plasma introduced into the chamber from the plasma generation source onto the surface of the substrate held by the holder; This is an ion plating apparatus characterized by comprising a drive mechanism for movement and rotation.

[Operation] According to the present invention, by incorporating a magnet in the vacuum chamber and arranging a counter electrode that swings and rotates by a drive mechanism, the plasma introduced into the chamber from the plasma generation source is transferred to the holder. The plasma can be focused with high density on the surface of the substrate held by the substrate, and the plasma can be irradiated onto the substrate surface from multiple directions. Therefore, the evaporation material evaporated from the evaporation source disposed in the chamber can be efficiently ionized by the plasma, and the ionized evaporation material can be introduced into the substrate from multiple directions. Therefore, the ionized vapor deposition material has good ability to spread around a complex-shaped substrate, so it is possible to obtain an ion plating apparatus that can efficiently form a uniform film over the entire surface of the substrate.

[Embodiments of the Invention] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a schematic diagram of an ion plating apparatus showing an embodiment of the present invention, and FIG.
3 is a sectional view taken along the Y-Y line in FIG. 1, FIG. 4 is a sectional view showing the counter electrode in FIG. 1 and its driving mechanism, and FIG. 5 is a sectional view showing the counter electrode and its driving mechanism. It is a perspective view showing main parts of the drive mechanism. 1 in the figure is a vacuum chamber, and an exhaust pipe 2 is provided at the bottom of the chamber 1 and communicates with a vacuum pump (not shown) for maintaining the chamber 1 at a predetermined degree of vacuum. 3 in the figure is a vapor deposition source. The vapor deposition source 3 includes a crucible 4 disposed near the bottom of the chamber 1, an electron gun 5 provided on the lower side wall of the chamber 1 for irradiating an electron beam, and an electron gun 5 disposed near the top of the crucible 4. is,
It is comprised of a deflection coil 6 for deflecting the electron beam from the electron gun 5 and irradiating the vapor deposition material in the crucible 4 . In addition, the chamber 1
A plasma gun 7 as a plasma generation source is provided on the inner outer wall, and an introduction pipe 8 for introducing a predetermined gas such as argon gas is provided at the rear of the plasma gun 7. Note that a plasma constriction section 9 is provided on the side wall of the chamber 1 in which the plasma gun 7 is provided. Furthermore, near the connection of the plasma gun 7 with the chamber 1 and the outer wall portion of the chamber 1 facing the plasma gun 7,
Air-core magnets 10a and 10b are provided, respectively, to prevent diffusion of plasma drawn from the plasma gun. On the side wall of the chamber 1, a plurality of units (for example, five
A driving mechanism 11 for the plasma gun 7 is provided so as to be located on the same plane as the plasma gun 7.

As shown in FIGS. 4 and 5, the counter electrode drive mechanism 11 includes a main body 12 that is tilted upward and fixed to the side wall of the chamber 1 via a seal member (not shown). This main body 12 is formed with a cavity 13 having a substantially T-shaped cross section. Inside this cavity 13, a carrier drive shaft 14 is provided.
is provided to penetrate through the main body 12 along the inclination direction, and the rear end side of the drive shaft 14 is connected to a rotation motor 15 provided on the main body 12 located outside the side wall of the chamber 1. It is becoming more and more driven. At the tip of the drive shaft 14,
A circular carrier 16 is pivoted. This carrier 16 is connected to the main body 1 via a ring bearing 17.
It is rotatably arranged on 2. Further, in the cavity 13 between the main body 12 and the drive shaft 14, a cylindrical drive transmission member 18 is provided between the transmission member 18 and the main body 14.
and four bearings 19a, 19b, 20a, 20b arranged between the transmission member 18 and the drive shaft 14, respectively.
It is rotatably provided via the. A bevel gear 21 is formed on the rear end side of the transmission member 18, and a gear 22 is formed on the front end side. This bevel gear 2
1, a shaft 23 inserted into the main body 12 from a direction perpendicular to the inclination direction thereof is meshed with a bevel gear 24 at the tip thereof, and the rear end side of the shaft 23 is located outside the side wall of the chamber 1. The main body 12 is connected to and driven by a swing motor 25 provided on the main body 12. Note that the shaft 23 is
3 and the main body 12 are interposed bearings 26a and 26b. Further, on the carrier 16, there is a pair of frames 27a, 27 facing each other on the upper part.
Blocks 28 with b are integrally and eccentrically provided. An L-shaped shaft 29 passes through the carrier 16 from the center of the block portion 28, and the shaft 29 is supported by bearings 30a and 30b provided on the block portion 28 and the carrier 16. A planetary gear 31 is provided at the lower end of this L-shaped shaft 29 and meshes with the gear 22 on the distal end side of the drive transmission member 18 . A bearing 32 is attached to the tip of the L-shaped shaft 29, and an arm 33 tilted at a predetermined angle is pivotally supported on the bearing 32. This arm 33 has a bearing portion disposed within a frame-shaped bearing 34, and its tip is fixed to a counter electrode 35. A shaft 36 is rotatably supported on the bearing portion of the arm 33, and the shaft 36 is orthogonal to the frame-shaped bearing 34 that is supported on the bearings 37a, 37b on the upper portion of the pair of frames 27a, 27b. It penetrates through. That is, the rotational fulcrum of the bearing portion of the arm 33 serves as the central axis of the miso scraping motion for swinging the counter electrode 35 fixed to the tip of the arm 33 in all directions. The counter electrode 35 has a disk shape, and has a ring-shaped electromagnet 38 built therein. Also,
A flexible tube 3 is provided on the rear end surface of the counter electrode 35.
9 are connected, and the flexible tube 39
extends to the outside through the side wall of the chamber 1. The counter electrode 35 includes a water-cooled pipe (not shown).
is buried therein, and both ends of the water cooling pipe extend outside the chamber 1 through the flexible pipe 39. A lead wire (not shown) is connected to the electromagnet 38, and the lead wire extends outside through the same path as the water-cooled pipe.
Furthermore, the main body 12, which is electrically connected to the counter electrode 35 through the respective members, is grounded. That is, by grounding the counter electrode 35 through the main body 12, etc., the plasma of the plasma gun 7 is transferred to each counter electrode 3 in the chamber 1.
5.

Further, in the vicinity of the plasma generation region in the chamber 1, there is a holder 4 for holding a substrate on which a film is to be formed.
0 is placed. A variable DC power supply 41 for applying a negative voltage to the holder 40 is connected to the holder 40 . Further, a heater (not shown) is arranged around the holder 40.

Next, thin film formation using the ion plating apparatus of the present invention will be explained.

First, the substrate 42 is held in the holder 40 and a predetermined evaporation material 43 is stored in the crucible 4 of the evaporation source, and then a vacuum pump (not shown) is activated to exhaust the gas in the chamber 1 through the exhaust pipe 2 and leave the chamber. 1 to a predetermined degree of vacuum (e.g. 10 ^-3 ~
10 ^-4 torr).

An electron beam is emitted from the electron gun 5, and the vapor deposition material 43 housed in the crucible 4 is irradiated with the electron beam by the deflection coil 6 to melt and evaporate it.

At the same time, by supplying a predetermined plasma generating gas such as argon to the plasma gun 7, plasma is generated from the plasma gun 7. The plasma 44 generated in this way is transmitted to the five drive mechanisms 11.
are held within the chamber 1 by the air-core magnets 10a, and are pulled out into the chamber 1 through the constriction part 9, and are held within the wide chamber 1 by the magnetic fields of the air-core magnets 10a and 10b placed outside the chamber 1. The spread of is prevented. In addition, a variable DC power supply 41 is attached to the substrate holder 40.
When a predetermined negative voltage is applied to the plasma 44, the positive ions in the extracted plasma 44 ionize the vapor gas, and the ions are accelerated and collided with the substrate 42. Furthermore, when a predetermined current is applied to the electromagnet 38 of the counter electrode 35, a magnetic field is generated from the surface of the electrode 35, and the plasma 44 drawn into the chamber 1 is focused with high density on the substrate 42. At this time, water is supplied and circulated through a water cooling pipe (not shown) provided at the counter electrode 35 to prevent the temperature of the counter electrode 35 from rising.

At the same time as applying a negative voltage to the substrate holder 40 and applying a current to the electromagnet 38, each drive mechanism 1
When the drive shaft 14 of 1 is rotated in the direction of arrow C by the rotation motor 15, the shaft is attached to the tip thereof,
In addition, a carrier 16 supported on the upper part of the main body 12 via a bearing 17 rotates in the same direction. As the carrier 16 rotates, a block part 28 is integrally and eccentrically fixed to the carrier 16, and a pair of frames 27a, 27b formed on the upper part thereof.
rotates around the drive shaft 14. Also,
When the shaft 23 is rotated in the direction of the arrow by the swinging motor 25, the drive transmission member 18, in which the bevel gear 24 and the bevel gear 22 at the tip of the shaft 23 are engaged, rotates in the direction of the arrow. Due to such rotation of the transmission member 18, the L gear meshes with the gear 21 (rotating in the direction of arrow A) on the distal end side via the planetary gear 31.
Shaft shaft 29 is rotated in the opposite direction to gear 21 (direction of arrow B). By rotating the L-shaped shaft 29,
An arm 33 is rotatably supported by a bearing 32 at its tip and inclined at a predetermined angle. By rotating the arm 33, the counter electrode 3 fixed to the tip thereof
The shaft 36 of the bearing portion of the arm 33 and the pair of frames 27a, which are arranged to intersect with each other;
It is swung and rotated about the frame-shaped bearing 34 of 27b as a fulcrum. In this way, the rotation of the L-shaped arm 29 accompanying the rotation of the shaft 23 by the swing motor 25 of each drive mechanism 11 causes the counter electrode 35 corresponding to each drive mechanism 11 to swing and rotate about the frame bearing 34 as a fulcrum. At the same time, the carrier 1 is rotated by the rotation of the carrier 16 along with the rotation of the rotation motor 15.
Block part 2 integrally and eccentrically fixed to 6
A counter electrode 35 connected to frames 27a and 27b of 8 is rotated about the drive shaft 14. The plasma 44 generated by the plasma gun 7 is caused by the swinging and rotation of the respective counter electrodes 35 by the plurality of (for example, five) drive mechanisms 11 and the magnetic field generated from the surface of each counter electrode 35.
is highly concentrated over the entire lower surface of the substrate 42 in the chamber 1, and the vapor deposition material evaporated by the above-mentioned vapor deposition source 3 reaches this high-density plasma 44 area and is ionized.
The positively ionized vapor deposition material in the plasma 44 is uniformly and efficiently accelerated over the entire substrate 42 held by the holder 40 by the magnetic field from each counter electrode 35 and the attraction force of the holder 40 to which a negative voltage is applied. , a thin film is formed upon collision.

Therefore, according to the present invention, the driving mechanism 11 swings and rotates the counter electrode 35, and the electromagnet 38 built in the counter electrode 35 generates a magnetic field from the surface of the electrode 35, and at the same time, the vapor deposition source 3 generates a magnetic field. By evaporating the material, the plasma gun and the generated plasma can be spread over the entire lower surface of the substrate 42 held in the holder 40, and the evaporated material is ionized in the plasma, The positively ionized vapor deposition material is applied to the substrate 42.
By accelerating and colliding with the surface at high density and from multiple directions, it is possible to improve the ability of the vapor deposition material to wrap around the surface of the substrate 42, thereby efficiently forming a uniform and homogeneous thin film with high adhesion even on complex-shaped substrates. can.

Furthermore, the angular velocity of the gear 22 of the drive transmission member 18 is ωa, the angular velocity of the planetary gear 31 of the L-shaped shaft 29 meshing with this gear 22 is ωb, and the angular velocity of the carrier 16 pivotally attached to the rotary drive shaft 14 is ωc. , the number of teeth of the gear 22 and the planetary gear 31 are a and b, respectively, and assuming that the carrier 16 is rotated in the same direction as the gear 22, ωb is expressed by the following equation.

ωb=ωc[1+(a/b)]-ωa(a/b) From the above formula, the angular velocity of the gear 31 on the L-shaped shaft (ωb)
is decelerated when the carrier 16 and the drive transmission member 18 are rotated in the same direction, and is accelerated when they are rotated in opposite directions.
The swinging and rotation speed of the counter electrode 35 by the shaped shaft 29 can be easily controlled.

Note that in the above embodiment, five drive mechanisms and five counter electrodes each oscillated and rotated by the drive mechanisms were used.
~4 or more than 4 units may be provided on the same plane side wall of the chamber.

In the above embodiment, an electromagnet is built in the counter electrode, but a permanent magnet may be built in instead.

In the above embodiment, a structure in which an electron beam generated by an electron gun is irradiated onto a crucible in a chamber by means of a deflection coil was used as the evaporation source, but a structure having an EB gun may also be used.

[Effects of the Invention] As detailed above, according to the ion plating apparatus of the present invention, the deposition material positively ionized in the plasma is accelerated and collided with the substrate surface from many directions at high density. Since it is possible to improve the ability of the material to wrap around the surface of the substrate, it has remarkable effects such as being able to efficiently form a uniform and homogeneous thin film with high adhesion even on complex-shaped substrates.

[Brief explanation of the drawing]

FIG. 1 is a schematic cross-sectional view of an ion plating apparatus showing an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line X--X in FIG. 1, and FIG.
FIG. 4 is a sectional view taken along the Y line, FIG. 4 is a sectional view showing the counter electrode of FIG. 1 and its driving mechanism, and FIG. 5 is a perspective view showing the main parts of the counter electrode and its driving mechanism. 1... Vacuum chamber, 3... Evaporation source, 4... Crucible, 5... Electron gun, 6... Deflection coil, 7...
Plasma gun, 11... Drive mechanism, 12... Main body,
14... Drive shaft, 15... Rotation motor, 16...
...Carrier, 18...Drive transmission member, 21, 24
...Bevel gear, 22 ... Gear, 25 ... Rocking motor, 29 ... L-shaped shaft, 31 ... Planetary gear, 33
...Arm, 35...Counter electrode, 38...Electromagnet, 40...Substrate holder, 42...Substrate, 43...
...Vapor deposition material, 44...Plasma.

Claims (1)

[Claims] 1. A vacuum chamber, a substrate holder disposed within the chamber, a deposition source disposed within the chamber, a plasma generation source for introducing plasma into the chamber, and an outer periphery of the plasma generation source. an air-core magnet disposed inside the chamber and provided on the outside of the chamber facing the plasma generation source and on the outside of the chamber facing the plasma generation source to focus the plasma drawn into the chamber; A counter electrode having a built-in magnet for focusing plasma introduced into the chamber from a generation source onto the surface of the substrate held by the holder, and a drive mechanism for swinging and rotating the counter electrode. An ion plating device characterized by: