JPH0583996B2 - - Google Patents
Info
- Publication number
- JPH0583996B2 JPH0583996B2 JP58164950A JP16495083A JPH0583996B2 JP H0583996 B2 JPH0583996 B2 JP H0583996B2 JP 58164950 A JP58164950 A JP 58164950A JP 16495083 A JP16495083 A JP 16495083A JP H0583996 B2 JPH0583996 B2 JP H0583996B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- pattern
- conductor pattern
- line
- side conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は磁気バブルメモリ素子、特に磁性体パ
ターンと導体パターンとの間に高分子樹脂膜を絶
縁膜として用いる磁気バブルメモリ素子の導体パ
ターンの配線構造に関するものである。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a magnetic bubble memory element, and particularly to wiring of a conductor pattern in a magnetic bubble memory element that uses a polymer resin film as an insulating film between a magnetic material pattern and a conductor pattern. It's about structure.
第１図は従来から用いられている磁気バブルメ
モリ素子の一例を示す要部平面構成図である。同
図において、１は磁気バブル情報を記憶保持する
マイナループ、２はマイナループ１へ磁気バブル
を書き込むライトメジヤライン、３はメジヤライ
ン２へ磁気バブルを書き込む磁気バブル発生器、
４はライトメジヤライン２上の磁気バブルをマイ
ナループ１へ転送させるトランスフアインゲー
ト、４ａ，４ｂはそのトランスフアイン電流を供
給するボンデイングパツド、５はマイナループ１
上の磁気バブルを読み出すリードメジヤライン、
６はリードメジヤライン５に接続された磁気バブ
ル検出器、７はマイナループ１上の磁気バブルを
リードメジヤライン５へ転送させるトランスフア
アウトゲート、７ａ，７ｂは各トランスハアウト
ゲート７の両端部に接続された信号ライン、グラ
ンドライン、８ａ，８ｂはそのトランスフアアウ
トゲート７にトランスフアアウト電流を供給する
ボンデイングパツドである。
FIG. 1 is a plan view showing the main parts of an example of a conventionally used magnetic bubble memory element. In the figure, 1 is a minor loop that stores and holds magnetic bubble information, 2 is a write major line that writes magnetic bubbles to minor loop 1, 3 is a magnetic bubble generator that writes magnetic bubbles to major line 2,
4 is a transfer gate that transfers the magnetic bubble on the light major line 2 to the minor loop 1; 4a and 4b are bonding pads that supply the transfer current; 5 is a minor loop 1
Read measure line to read out the magnetic bubble on the top,
6 is a magnetic bubble detector connected to the lead measure line 5; 7 is a transfer out gate that transfers the magnetic bubble on the minor loop 1 to the lead measure line 5; 7a and 7b are both ends of each transfer out gate 7. Signal lines and ground lines 8a and 8b connected to the transfer out gate 7 are bonding pads that supply a transfer out current to the transfer out gate 7.
このように構成される磁気バブルメモリ素子に
おいて、磁気バブルを転送するマイナループ１、
ライトメジヤライン２、リードメジヤライン５お
よび磁気バブル検出器６はパーマロイ等の軟強磁
性体パターンにより形成され、一方敷バブルの転
送を制御するトランスフアインゲート４、トラン
スフアアウトゲート７およびその信号ライン７
ａ、グランドライン７ｂはAl等の導体パターン
により形成され、そして両者のパターンは図示し
ない磁性体基板上に高分子樹脂膜を介して積層配
置されている。 In the magnetic bubble memory element configured in this way, a minor loop 1 for transferring magnetic bubbles,
The write measure line 2, the read measure line 5, and the magnetic bubble detector 6 are formed of soft ferromagnetic material patterns such as permalloy, while the transfer in gate 4, transfer out gate 7, and its signal line 7
The ground line 7b is formed of a conductor pattern made of Al or the like, and both patterns are laminated on a magnetic substrate (not shown) via a polymer resin film.
しかしながら、前記構成による磁気バブルメモ
リ素子は、第１図に点線の丸印で囲んだＡ部で示
すようにリードメジヤライン５と信号ライン７
ａ、グランドライン７ｂとが高分子樹脂膜を介し
て交差する部分を複数個所有し、このＡ部は第２
図に拡大平面図で示すと、リードメジヤライン５
の一つの磁性体パターン５ａ下にトランスフアア
ウトゲート７を形成する信号ライン７ａの導体パ
ターン７a′およびグランドライン７ｂの導体パタ
ーン７b′が交差して配置されている。このような
配線構造によると、第３図にその要部断面構成図
で示すように磁性体基板９上に形成された信号側
導体パターン７a′とグランド側導体パターン７
b′との間において、高分子樹脂膜１０および磁性
体パターン５ａを介して絶縁破壊が発生するとい
う問題があつた。すなわち、高分子樹脂膜１０の
膜厚は約3000Å程度と薄いため、信号側導体パタ
ーン７a′と磁性体パターン５ａとの間およびグラ
ンド側導体パターン７b′と磁性体パターン５ａと
の間の各絶縁抵抗R1が著しく低下する。このた
め、信号側導体パターン７a′とグランド側導体パ
ターン７b′との間に動作電圧が印加されると、信
号側導体パターン７a′−絶縁抵抗R1−磁性体パタ
ーン５ａの絶縁抵抗R2−絶縁抵抗R1−グランド
側導体パターン７b′の経路に電位差が生じ、絶縁
破壊が生ずる。この場合、この信号側導体パター
ン７a′とグランド側導体パターン７b′との間には
通常約200V程度の動作電圧が印加されるが数Ｖ
ないし数十ボルトの動作電圧で絶縁破壊が生ずる
ことがわかつた。 However, the magnetic bubble memory element with the above configuration has a lead measure line 5 and a signal line 7, as shown by a section A surrounded by a dotted circle in FIG.
a, has multiple parts where the ground line 7b intersects via a polymer resin film, and this part A is the second part.
As shown in the enlarged plan view in the figure, the lead measure line 5
A conductor pattern 7a' of a signal line 7a forming a transfer out gate 7 and a conductor pattern 7b' of a ground line 7b are arranged to intersect under one magnetic material pattern 5a. According to such a wiring structure, the signal side conductor pattern 7a' and the ground side conductor pattern 7 formed on the magnetic substrate 9 are connected as shown in FIG.
There was a problem in that dielectric breakdown occurred between the polymer resin film 10 and the magnetic material pattern 5a between the magnetic material pattern 5a and the magnetic material pattern 5a. That is, since the film thickness of the polymer resin film 10 is as thin as about 3000 Å, each insulation between the signal side conductor pattern 7a' and the magnetic material pattern 5a and between the ground side conductor pattern 7b' and the magnetic material pattern 5a is The resistance R 1 decreases significantly. Therefore, when an operating voltage is applied between the signal side conductor pattern 7a' and the ground side conductor pattern 7b', the signal side conductor pattern 7a' - insulation resistance R 1 - insulation resistance of the magnetic material pattern 5a R 2 - A potential difference occurs in the path between the insulation resistance R 1 and the ground-side conductor pattern 7b', causing dielectric breakdown. In this case, an operating voltage of about 200V is normally applied between the signal side conductor pattern 7a' and the ground side conductor pattern 7b', but several V
It was found that dielectric breakdown occurs at operating voltages ranging from several tens of volts.
したがつて本発明は、前述した従来の問題に鑑
みてなされたものであり、その目的とするところ
は、信号ラインとグランドラインと間の絶縁耐力
を向上させ、品質、信頼性の高い磁気バブルメモ
リ素子を提供することにある。
Therefore, the present invention has been made in view of the above-mentioned conventional problems, and its purpose is to improve the dielectric strength between the signal line and the ground line, and to create a magnetic bubble with high quality and reliability. An object of the present invention is to provide a memory device.
このような目的を達成するために本発明による
磁気バブルメモリ素子は、信号ラインとグランド
ラインとを１つの磁性体パターン下で横切らない
ように相互に他の磁性体パターン下を横切るよう
に離間して配置したものである。
In order to achieve this object, the magnetic bubble memory device according to the present invention has a signal line and a ground line separated from each other so that they do not cross under one magnetic pattern, but cross under another magnetic pattern. This is the layout.
第４図は本発明による磁気バブルメモリ素子の
一例を示す前記第２図に相等する要部拡大平面で
あり、前述の図と同一部分は同一符号付す。同図
において、グランド側導体パターン７b′は従来と
同様にリードメジヤライン５の一つの磁性体パタ
ーン５ａ下を横切つて配置され、一方、信号側導
体パターン７a′は磁気バブル転送方向側に隣接す
る他の磁性体パターン５ｂ下を横切つて形成配置
されている。
FIG. 4 is an enlarged plan view of essential parts equivalent to the above-mentioned FIG. 2 showing an example of the magnetic bubble memory element according to the present invention, and the same parts as in the above-mentioned figures are given the same reference numerals. In the same figure, the ground side conductor pattern 7b' is arranged across under one magnetic material pattern 5a of the lead measure line 5 as in the conventional case, while the signal side conductor pattern 7a' is arranged in the magnetic bubble transfer direction. It is formed and arranged to cross under another adjacent magnetic material pattern 5b.
このような構成によれば、磁性体パターン５ａ
と５ｂとの間には、約1μｍ程度のパターン間ギ
ヤツプｇを有しているため、信号側導体パターン
７a′とグランド側導体パターン７b′との間の絶縁
抵抗が高くなり、したがつて、絶縁耐圧は著しく
向上し、動作電圧も約300V程度まで増大させる
ことができる。 According to such a configuration, the magnetic material pattern 5a
Since there is an inter-pattern gap g of about 1 μm between the signal side conductor pattern 7a' and the ground side conductor pattern 7b', the insulation resistance between the signal side conductor pattern 7a' and the ground side conductor pattern 7b' becomes high. The dielectric strength has been significantly improved, and the operating voltage can be increased to about 300V.
以上説明したように本発明によれば、信号ライ
ンとグランドラインとの間の絶縁耐力が向上でき
るので、品質および信頼性の高い磁気バブルメモ
リ素子が得られるという極めて優れた効果を有す
る。
As explained above, according to the present invention, it is possible to improve the dielectric strength between the signal line and the ground line, so it has an extremely excellent effect that a magnetic bubble memory element with high quality and reliability can be obtained.
第１図は従来の磁気バブルメモリ素子の一例を
示す要部平面構成図、第２図は第１図に示すＡ部
の拡大平面図、第３図はその要部拡大断面図、第
４図は本発明による磁気バブルメモリ素子の一例
を示す前記第２図に相当する要部拡大平面図であ
る。
１……マイナループ、２……ライトメジヤライ
ン、３……磁気バブル発生器、４……トランスフ
アインゲート、４ａ，４ｂ……ボンデイングパツ
ド、５……リードメジヤライン、６……磁気バブ
ル検出器、７……トランスフアアウトゲート、７
ａ……信号ライン、７a′……信号側導体パター
ン、７ｂ……グランドライン、７b′……グランド
側導体パターン、８ａ，８ｂ……ボンデイングパ
ツド、９……磁性体基板、１０……高分子樹脂
膜。
FIG. 1 is a plan view of a main part showing an example of a conventional magnetic bubble memory element, FIG. 2 is an enlarged plan view of part A shown in FIG. 1, FIG. 3 is an enlarged sectional view of the main part, and FIG. 4 FIG. 2 is an enlarged plan view of a main part corresponding to FIG. 2, showing an example of a magnetic bubble memory element according to the present invention. 1...Minor loop, 2...Light major line, 3...Magnetic bubble generator, 4...Transfer gate, 4a, 4b...Bonding pad, 5...Read major line, 6...Magnetic bubble Detector, 7...Transfer out gate, 7
a... Signal line, 7a'... Signal side conductor pattern, 7b... Ground line, 7b'... Ground side conductor pattern, 8a, 8b... Bonding pad, 9... Magnetic substrate, 10... High Molecular resin membrane.
Claims (1)
み出し情報を転送するための複数の磁性体パター
ン５ａを連ねたリードライン５と、上記マイナー
ループの情報を上記リードラインに転送させる複
数のトランスフアアウトゲート７と、第１及び第
２のボンデイングパツド８ａ，８ｂと、上記複数
のゲートの各々の一端を上記第１のパツド８ａに
共通に接続する第１の導体パターン７ｂと、上記
複数のゲートの各々の他端を上記第２のパツド８
ｂに共通に接続する第２の導体パターン７ａと、
上記第１及び第２の導体パターンと上記磁性体パ
ターンとの間に形成された絶縁層１０とを具備し
て成り、上記第１及び第２の導体パターンは、上
記ゲートが隣合うところではそのまま延長すると
上記磁性体パターンの１個に共に交差する程度に
近接した並行部分を有するが、上記リードライン
の手前でその間隔が広げられ各々異なる上記磁性
体パターンと交差して上記リードラインの外側に
延長されて成ることを特徴とする磁気バブルメモ
リ素子。1 A plurality of minor loops 1 that store information, a lead line 5 that connects a plurality of magnetic patterns 5a for transferring read information, and a plurality of transfer outgates that transfer the information of the minor loops to the read line. 7, first and second bonding pads 8a and 8b, a first conductor pattern 7b that commonly connects one end of each of the plurality of gates to the first pad 8a, and The other end of each is connected to the second pad 8.
a second conductor pattern 7a commonly connected to b;
It comprises an insulating layer 10 formed between the first and second conductor patterns and the magnetic pattern, and the first and second conductor patterns remain as they are in the areas where the gates are adjacent to each other. When extended, it has a parallel portion close enough to intersect with one of the magnetic patterns, but the distance between them is widened in front of the lead line, and each part intersects with a different magnetic pattern to the outside of the lead line. A magnetic bubble memory element characterized by being extended.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16495083A JPS6057591A (en) | 1983-09-09 | 1983-09-09 | magnetic bubble memory element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16495083A JPS6057591A (en) | 1983-09-09 | 1983-09-09 | magnetic bubble memory element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6057591A JPS6057591A (en) | 1985-04-03 |
| JPH0583996B2 true JPH0583996B2 (en) | 1993-11-30 |
Family
ID=15802937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16495083A Granted JPS6057591A (en) | 1983-09-09 | 1983-09-09 | magnetic bubble memory element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6057591A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6025828B2 (en) * | 1978-08-14 | 1985-06-20 | 富士通株式会社 | magnetic bubble memory chip |
-
1983
- 1983-09-09 JP JP16495083A patent/JPS6057591A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6057591A (en) | 1985-04-03 |
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