Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPH0587008B2 - - Google Patents
[go: Go Back, main page]

JPH0587008B2 - - Google Patents

Info

Publication number
JPH0587008B2
JPH0587008B2 JP61032742A JP3274286A JPH0587008B2 JP H0587008 B2 JPH0587008 B2 JP H0587008B2 JP 61032742 A JP61032742 A JP 61032742A JP 3274286 A JP3274286 A JP 3274286A JP H0587008 B2 JPH0587008 B2 JP H0587008B2
Authority
JP
Japan
Prior art keywords
wafer
mask
mounting table
groove
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61032742A
Other languages
Japanese (ja)
Other versions
JPS62193119A (en
Inventor
Yoshinori Shimamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP61032742A priority Critical patent/JPS62193119A/en
Publication of JPS62193119A publication Critical patent/JPS62193119A/en
Publication of JPH0587008B2 publication Critical patent/JPH0587008B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【発明の詳細な説明】 〔発明の分野〕 本発明は、コンタクト露光型半導体露光装置に
おいて、ウエハチヤツク上に搭載したウエハとマ
スクホルダに保持したマスクとを密着させるため
のウエハ密着方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to a wafer adhesion method for adhering a wafer mounted on a wafer chuck to a mask held in a mask holder in a contact exposure type semiconductor exposure apparatus.

〔発明の背景〕[Background of the invention]

半導体製造プロセスのリソグラフイー工程にお
いては、レジストを塗布した半導体ウエハをマス
クまたはレチクルを介して露光し、パターンの転
写を行う。このようなパターン転写用露光方式と
して、コンタクト方式、プロキシミテイ方式、反
射型投影方式、縮小レンズ投影方式等が行われて
いる。コンタクト方式においては、マスクとウエ
ハとを密着させて露光を行うため比較的高解像度
のパターンが得られる。このようなコンタクト露
光型半導体露光装置においては、ウエハは真空チ
ヤツクにより吸着保持されこの上にマスクが位置
合せされて装着される。この場合、マスクとウエ
ハ間にガスが封入されると光の回析等により高解
像度のパターンが得られなくなる。従つて、高解
像パターンを得るためにはガストラツプを防止し
マスクとウエハとを確実に密着させる必要があ
り、またマスクはウエハに対し精密に位置合せさ
れていなければならない。
In a lithography step of a semiconductor manufacturing process, a semiconductor wafer coated with a resist is exposed to light through a mask or a reticle to transfer a pattern. As such exposure methods for pattern transfer, a contact method, a proximity method, a reflective projection method, a reduction lens projection method, etc. are used. In the contact method, since exposure is performed with the mask and wafer in close contact, a relatively high-resolution pattern can be obtained. In such a contact exposure type semiconductor exposure apparatus, a wafer is suctioned and held by a vacuum chuck, and a mask is aligned and mounted on the wafer. In this case, if gas is sealed between the mask and the wafer, a high-resolution pattern cannot be obtained due to light diffraction or the like. Therefore, in order to obtain a high-resolution pattern, it is necessary to prevent gas traps and ensure that the mask and wafer are in close contact with each other, and the mask must be precisely aligned with the wafer.

〔従来の技術〕[Conventional technology]

従来のコンタクト方式露光装置においては、ウ
エハを搭載したウエハチヤツクとマスクを保持し
たマスクホルダとの間に真空圧を作用させてウエ
ハとマスクとを密着させていた。しかしながら、
このような従来の密着方法においては、第3図に
示すように、ウエハ5とマスク6との間の中心部
付近にエアーが封止されいわゆるガストラツプ3
0が発生し、密着性が低下し高解像のパターンが
得られずパターン精度も低下するという欠点があ
つた。
In a conventional contact type exposure apparatus, vacuum pressure is applied between a wafer chuck carrying a wafer and a mask holder holding a mask to bring the wafer and mask into close contact with each other. however,
In such a conventional adhesion method, as shown in FIG. 3, air is sealed near the center between the wafer 5 and the mask 6, creating a so-called gas trap 3.
There were disadvantages in that 0 was generated, the adhesion was lowered, a high-resolution pattern could not be obtained, and the pattern accuracy was also lowered.

このようなガストラツプの発生を防止するた
め、ウエハチヤツク上面に放射状の溝を設けこの
溝を介してウエハを真空吸着してウエハを変形さ
せウエハ上面のエアーを逃す方法が提案されてい
る。このような放射状の溝を有するウエハチヤツ
クの一例が実開昭54−54270号公報に示されてい
る。この公知のウエハチヤツクにおいては、ウエ
ハ搭載用保持台上面に放射状の溝が外周端部に達
するまで拡い面積に亘つて形成されているため、
この溝に真空圧を作用させるとウエハが大きく変
形し、焼付け時にウエハ変形によるパターンの歪
みが大きくなり、またウエハ変形によりマスクと
ウエハとのアライメントの精度が低下するという
問題があり実用上支障があつた。
In order to prevent the occurrence of such gas traps, a method has been proposed in which radial grooves are provided on the upper surface of the wafer chuck and the wafer is vacuum-suctioned through the groove to deform the wafer and release air from the upper surface of the wafer. An example of a wafer chuck having such radial grooves is shown in Japanese Utility Model Application No. 54-54270. In this known wafer chuck, radial grooves are formed on the upper surface of the wafer mounting holding table over a wide area until reaching the outer peripheral edge.
If vacuum pressure is applied to this groove, the wafer will be greatly deformed, which will cause large pattern distortions due to wafer deformation during printing, and the wafer deformation will reduce the accuracy of alignment between the mask and the wafer, which is a practical problem. It was hot.

〔発明の目的〕[Purpose of the invention]

本発明は、前記従来技術の欠点に鑑みなされた
ものであつて、真空吸着時のウエハ変形量を小さ
くしてパターンの歪みを抑制しまたマスクとウエ
ハとのアライメント精度を向上させて高解像、高
精度のパターン焼付けを可能とするウエハ密着方
法の提供を目的とする。
The present invention has been made in view of the drawbacks of the prior art.The present invention suppresses pattern distortion by reducing the amount of wafer deformation during vacuum suction, and improves the alignment precision between the mask and the wafer to achieve high resolution. The purpose of the present invention is to provide a wafer adhesion method that enables highly accurate pattern printing.

〔実施例〕〔Example〕

第1図は本発明方法で用いるウエハチヤツクの
上面図であり、第2図はその−C−線に沿つ
た縦断面図である。ウエハチヤツク1を構成する
ウエハ搭載台20の上面に、同心円状の複数の溝
3および中心付近から外周端縁の内側部分までに
亘る2本の放射状の溝2が形成されている。2本
の放射状の溝2は中心Cに関し対称位置に形成さ
れている。各放射状の溝2は導通孔4を介して図
示しない真空源に連通している。また、各同心円
状の溝3は導通孔14を介して図示しない真空源
に連通している。導通孔4,14は各々電磁弁
8,18を介して真空源または大気に切換えて連
通可能である。同心円状の溝3はウエハ保持用の
ものであり、放射状の溝2はウエハとマスク間の
ガス逃し用のものである。各放射状の溝2は、ウ
エハ5およびマスク6のセツト時の位置合せ用の
ウエハアライメントマーク11およびマスクアラ
イメントマーク12から外れた位置に設けられ
る。ウエハ搭載台20の外周部にはシールゴム9
が設けられ、マスク6を搭載したマスクホルダ7
とウエハ5を搭載したウエハ搭載台20との間に
真空室10を形成可能とする。
FIG. 1 is a top view of a wafer chuck used in the method of the present invention, and FIG. 2 is a longitudinal sectional view thereof taken along line -C-. A plurality of concentric grooves 3 and two radial grooves 2 extending from the vicinity of the center to the inner part of the outer peripheral edge are formed on the upper surface of the wafer mounting table 20 constituting the wafer chuck 1. The two radial grooves 2 are formed at symmetrical positions with respect to the center C. Each radial groove 2 communicates with a vacuum source (not shown) via a through hole 4. Further, each concentric groove 3 communicates with a vacuum source (not shown) via a conduction hole 14. The communication holes 4 and 14 can be switched to communicate with a vacuum source or the atmosphere via electromagnetic valves 8 and 18, respectively. The concentric grooves 3 are for holding the wafer, and the radial grooves 2 are for releasing gas between the wafer and the mask. Each radial groove 2 is provided at a position apart from a wafer alignment mark 11 and a mask alignment mark 12 for positioning the wafer 5 and mask 6 when they are set. A seal rubber 9 is attached to the outer periphery of the wafer mounting table 20.
A mask holder 7 is provided with a mask 6 mounted thereon.
A vacuum chamber 10 can be formed between the wafer 5 and the wafer mounting table 20 on which the wafer 5 is mounted.

以上のような構成のウエハチヤツクにおいて、
電磁弁8,18を介して放射状の溝2および同心
円状の溝3に真空圧を作用させれば、第2図に示
すように、放射状の溝2の部分でウエハ5が凹状
に適度に変形しウエハ5とマスク6との間のガス
を逃しガストラツプの発生を防止する。このとき
同心円状の溝3の部分では溝巾が小さいため(約
1mm)ウエハ5はほとんど変形しない。
In the wafer chuck with the above configuration,
When vacuum pressure is applied to the radial grooves 2 and the concentric grooves 3 via the electromagnetic valves 8 and 18, the wafer 5 is appropriately deformed into a concave shape at the radial grooves 2, as shown in FIG. The gas between the wafer 5 and the mask 6 is released to prevent gas traps from occurring. At this time, since the concentric groove 3 has a small groove width (approximately 1 mm), the wafer 5 hardly deforms.

以上のようなウエハチヤツクの使用方法を以下
に説明する。まず、ウエハ5をウエハ搭載台20
上に載置し電磁弁8,18に真空源側に切換えて
各同心円状の溝3および放射状の溝2に真空圧を
導入する。これによりウエハ5がウエハ搭載台2
0上に吸着固定されるとともに前述のようにウエ
ハ5が変形してその上面に放射状の溝2に沿つて
凹部が形成される。次にマスクアライメントマー
ク12およびウエハアライメントマーク11を用
いてマスク6とウエハ5とを位置合せする。この
とき両アライメントマーク11,12は放射状の
溝2の位置からずれた位置にあるためウエハ変形
の影響を受けず位置合せの誤差を生じない。次に
真空室10を真空状態にしてマスク6とウエハ5
とを相互に密着させる。このときウエハ5の上面
の放射状の溝2に沿つた前記凹部を通してウエハ
5とマスク6との間のエアーが逃がされガストラ
ツプは起こらない。次に電磁弁8を大気側に切換
え放射状の溝2を大気開放する。これによりウエ
ハ5の変形は元に戻りウエハ全面がガストラツプ
のない状態でマスクと完全に密着する。このとき
放射状の溝2を大気圧以上に加圧してもよい。続
いて通常の操作に従つて露光工程が施される。
The method of using the wafer chuck as described above will be explained below. First, the wafer 5 is placed on the wafer mounting table 20.
The electromagnetic valves 8 and 18 are switched to the vacuum source side to introduce vacuum pressure into each of the concentric grooves 3 and the radial grooves 2. As a result, the wafer 5 is placed on the wafer mounting table 2.
While the wafer 5 is suctioned and fixed onto the wafer 0, the wafer 5 is deformed as described above, and a recess is formed along the radial groove 2 on the upper surface of the wafer 5. Next, the mask 6 and the wafer 5 are aligned using the mask alignment mark 12 and the wafer alignment mark 11. At this time, since both alignment marks 11 and 12 are at positions shifted from the positions of the radial grooves 2, they are not affected by wafer deformation and no alignment errors occur. Next, the vacuum chamber 10 is evacuated and the mask 6 and wafer 5 are removed.
and in close contact with each other. At this time, air between the wafer 5 and the mask 6 is released through the recesses along the radial grooves 2 on the upper surface of the wafer 5, and gas traps do not occur. Next, the solenoid valve 8 is switched to the atmosphere side to open the radial groove 2 to the atmosphere. As a result, the deformation of the wafer 5 is returned to its original state, and the entire surface of the wafer is brought into complete contact with the mask without any gas traps. At this time, the radial grooves 2 may be pressurized above atmospheric pressure. Subsequently, an exposure step is performed according to normal operations.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明方法で用いるウエ
ハチヤツクにおいては、ウエハ搭載台上面に放射
状の溝を中心付近から外周縁の内側までに亘つて
設けてあるため、ウエハとマスクの位置合せ時に
この放射状の溝に真空圧を作用させることにより
ウエハが適度に変形してウエハ上面のガスを均一
に確実に排出することができ、マスクとウエハと
の密着度が向上し高解像で精度の高いパターン焼
付けが可能となる。また、各放射状の溝はマスク
とウエハとの位置合せ用アライメントマークから
外れた位置に設けてあるため、位置合せ時にウエ
ハ変形による位置ずれを起すことはなく位置決め
精度の信頼性が高まる。
As explained above, in the wafer chuck used in the method of the present invention, radial grooves are provided on the top surface of the wafer mounting table, extending from near the center to inside the outer periphery. By applying vacuum pressure to the grooves, the wafer is appropriately deformed and the gas on the top surface of the wafer can be discharged uniformly and reliably, improving the degree of adhesion between the mask and the wafer, allowing for high-resolution and highly accurate pattern printing. becomes possible. Further, since each radial groove is provided at a position away from the alignment mark for positioning the mask and wafer, positional deviation due to wafer deformation does not occur during positioning, and the reliability of positioning accuracy is increased.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明方法で用いるウエハチヤツクの
上面図、第2図は第1図の−C−線に沿つた
断面図、第3図は従来のウエハ密着方法における
ガストラツプの説明図である。 1……ウエハチヤツク、2……放射状の溝、3
……同心円状の溝、4,14……導通孔、5……
ウエハ、6……マスク、11……ウエハアライメ
ントマーク、12……マスクアライメントマー
ク、20……ウエハ搭載台。
FIG. 1 is a top view of a wafer chuck used in the method of the present invention, FIG. 2 is a sectional view taken along line -C- in FIG. 1, and FIG. 3 is an explanatory diagram of a gas trap in a conventional wafer bonding method. 1... wafer chuck, 2... radial grooves, 3
... Concentric grooves, 4, 14 ... Conduction holes, 5 ...
Wafer, 6...Mask, 11...Wafer alignment mark, 12...Mask alignment mark, 20...Wafer mounting stand.

Claims (1)

【特許請求の範囲】 1 ウエハチヤツク上に搭載したウエハとマスク
ホルダに保持したマスクとを密着させるためのウ
エハ密着方法において、 ウエハ搭載台上面に、ウエハ保持用の溝および
該ウエハ搭載台上面の中心付近から外周縁の内側
近傍までに亘る放射状の溝を設け、前記各溝に各
各真空圧を導入可能としたウエハチヤツクを使用
し、 前記放射状の溝に真空圧を導入することにより
ウエハを前記ウエハ搭載台上に吸着するとともに
該ウエハを該放射状の溝に沿つて変形させウエハ
上面に凹部を形成してウエハとマスク間のエアー
を逃し、 続いて該放射状の溝に大気圧またはそれ以上の
圧力を導入してウエハの変形を元に戻すことを特
徴とするウエハ密着方法。 2 前記ウエハ搭載台の外周部に該ウエハ搭載台
とマスクホルダとの間を封止するためのシール材
を設け、ウエハを搭載したウエハ搭載台とマスク
を搭載したマスクホルダとの間に真空室を形成可
能とし、該真空室に真空圧を導入することにより
ウエハとマスクとを密着させることを特徴とする
特許請求の範囲第項1記載のウエハ密着方法。 3 前記放射状の溝に真空圧を導入すると同時に
前記ウエハ保持用の溝にも真空圧を導入してウエ
ハを吸着固定保持することを特徴とする特許請求
の範囲第1項または第2項記載のウエハ密着方
法。 4 前記ウエハ搭載台上面は実質上円形であり、
前記ウエハ保持用の溝は同心円状の複数の溝から
なることを特徴とする特許請求の範囲第1項から
第3項までのいずれか1項記載のウエハ密着方
法。 5 前記放射状の溝は、ウエハとマスクとの位置
合せ用マークから外れた位置に設けたことを特徴
とする特許請求の範囲第1項から第4項までのい
ずれか1項記載のウエハ密着方法。 6 前記ウエハ保持用の溝および放射状の溝は各
各電磁弁を介して真空源または大気に切換えて連
通可能としたことを特徴とする特許請求の範囲第
1項から第5項までのいずれか1項記載のウエハ
密着方法。 7 前記放射状の溝は、ウエハ搭載台上面の中心
に関し対称な2本の溝により構成したことを特徴
とする特許請求の範囲第1項から第6項までのい
ずれか1項記載のウエハ密着方法。 8 前記ウエハ保持用の溝は、真空圧導入時にウ
エハを変形させない程度に溝巾を狭くしたことを
特徴とする特許請求の範囲第1項から第7項まで
のいずれか1項記載のウエハ密着方法。
[Scope of Claims] 1. In a wafer adhesion method for bringing a wafer mounted on a wafer chuck into close contact with a mask held in a mask holder, the top surface of a wafer mounting table includes a groove for holding the wafer and a center of the top surface of the wafer mounting table. A wafer chuck is provided with radial grooves extending from the vicinity to the inner vicinity of the outer periphery, and is capable of introducing each vacuum pressure into each of the grooves, and by introducing vacuum pressure into the radial grooves, the wafer is removed from the wafer. While adsorbing the wafer onto the mounting table, the wafer is deformed along the radial grooves, a recess is formed on the top surface of the wafer to release air between the wafer and the mask, and then atmospheric pressure or higher pressure is applied to the radial grooves. A wafer adhesion method characterized by introducing a method to restore wafer deformation to its original state. 2. A sealant is provided on the outer periphery of the wafer mounting table to seal between the wafer mounting table and the mask holder, and a vacuum chamber is provided between the wafer mounting table on which the wafer is mounted and the mask holder on which the mask is mounted. 2. The wafer adhesion method according to claim 1, wherein the wafer and the mask are brought into close contact by introducing vacuum pressure into the vacuum chamber. 3. The device according to claim 1 or 2, characterized in that the wafer is sucked and fixed by introducing vacuum pressure into the radial groove and simultaneously introducing vacuum pressure into the wafer holding groove. Wafer adhesion method. 4. The upper surface of the wafer mounting table is substantially circular;
4. The method for adhering a wafer according to claim 1, wherein the wafer holding groove comprises a plurality of concentric grooves. 5. The method for adhering a wafer according to any one of claims 1 to 4, wherein the radial groove is provided at a position away from an alignment mark between the wafer and the mask. . 6. Any one of claims 1 to 5, characterized in that the wafer holding groove and the radial groove can be switched to communicate with a vacuum source or the atmosphere through each electromagnetic valve. The wafer adhesion method described in Section 1. 7. The wafer adhesion method according to any one of claims 1 to 6, characterized in that the radial grooves are constituted by two grooves symmetrical with respect to the center of the upper surface of the wafer mounting table. . 8. The wafer-holding groove according to any one of claims 1 to 7, wherein the width of the groove for holding the wafer is narrowed to such an extent that the wafer is not deformed when vacuum pressure is introduced. Method.
JP61032742A 1986-02-19 1986-02-19 Wafer adhesion method Granted JPS62193119A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61032742A JPS62193119A (en) 1986-02-19 1986-02-19 Wafer adhesion method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61032742A JPS62193119A (en) 1986-02-19 1986-02-19 Wafer adhesion method

Publications (2)

Publication Number Publication Date
JPS62193119A JPS62193119A (en) 1987-08-25
JPH0587008B2 true JPH0587008B2 (en) 1993-12-15

Family

ID=12367289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61032742A Granted JPS62193119A (en) 1986-02-19 1986-02-19 Wafer adhesion method

Country Status (1)

Country Link
JP (1) JPS62193119A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9557659B2 (en) 2013-10-23 2017-01-31 Canon Kabushiki Kaisha Lithography apparatus, determination method, and method of manufacturing article

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9557659B2 (en) 2013-10-23 2017-01-31 Canon Kabushiki Kaisha Lithography apparatus, determination method, and method of manufacturing article

Also Published As

Publication number Publication date
JPS62193119A (en) 1987-08-25

Similar Documents

Publication Publication Date Title
US5160959A (en) Device and method for the alignment of masks
TWI771336B (en) Positioning device
JPH06326174A (en) Wafer vacuum suction device
JP2750554B2 (en) Vacuum suction device
JPH08125000A (en) Wafer chuck
JPH0587008B2 (en)
JPS60189745A (en) Contact exposing method
US4669871A (en) Photographic printing plate and method of exposing a coated sheet using same
JP2509134B2 (en) Method and apparatus for exposing printed wiring board
JPS62193138A (en) Uehachiyatsuk
JPS5980930A (en) Aligning method of wafer
JP3362653B2 (en) Hard contact exposure equipment
JPS61182239A (en) Bonding device for semiconductor substrate
JP5002871B2 (en) Exposure equipment
JP2002091011A (en) Contact exposure equipment
JPS60189746A (en) exposure equipment
JPS6314459Y2 (en)
JPS6346569B2 (en)
JPS58295Y2 (en) Semiconductor wafer mounting equipment
JP2007219242A (en) Contact exposure method and contact exposure apparatus
JPH03150863A (en) Wafer chuck
JPH0356965A (en) Exposing device
JPS6053464B2 (en) Wafer alignment equipment
JP2651052B2 (en) Contact exposure equipment
JP4475754B2 (en) Combination of parallel forming jigs