JPH061178B2 - Defect inspection method and apparatus - Google Patents
Defect inspection method and apparatusInfo
- Publication number
- JPH061178B2 JPH061178B2 JP409085A JP409085A JPH061178B2 JP H061178 B2 JPH061178 B2 JP H061178B2 JP 409085 A JP409085 A JP 409085A JP 409085 A JP409085 A JP 409085A JP H061178 B2 JPH061178 B2 JP H061178B2
- Authority
- JP
- Japan
- Prior art keywords
- phase
- threshold
- inspected
- image signal
- diffracted light
- Prior art date
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
- G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microscoopes, Condenser (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は光学的に透明な物体(以下「被検査物体」とい
う)の欠陥検査方法に係り、特に、被検査物体表面上の
微小凹凸欠陥を検出するのに好適な欠陥検査方法及びそ
の装置に関する。Description: FIELD OF THE INVENTION The present invention relates to a defect inspection method for an optically transparent object (hereinafter referred to as “inspected object”), and more particularly, to a micro unevenness defect on the surface of the inspected object. The present invention relates to a defect inspection method and device suitable for detection.
被検査物体を透過する光は、被検査物体の厚みに応じた
位相変化を受ける。位相差顕微鏡は、この位相変化量を
測定することにより、生の細胞や菌あるいは透明基板上
の微小凹凸等の透明で明暗、色調の差に乏しい物体を観
察できるようになつている(参考文献:吉原邦夫著「物
理光学」共立出版1966年131〜135頁)。The light transmitted through the inspection object undergoes a phase change according to the thickness of the inspection object. By measuring the amount of this phase change, the phase contrast microscope can observe transparent cells such as live cells and bacteria or minute irregularities on a transparent substrate, and objects with little difference in color tone (references). : Kunio Yoshihara, "Physical Optics," Kyoritsu Shuppan, 1966, pp. 131-135).
第7図は位相差顕微鏡の光学系の原理図であり、被検査
物体7の透過率によつて変調される0次回折光1を背景
強度とし、前述の被検査物体7の屈折率変化あるいは厚
みの変化という位相差量に応じて変調される1次以上の
高次回折光2に位相板9を用いて既述の0次回折光1と
干渉するように1/4波長の位相変化を与え、像面10で被
検査物体7による位相変化を明暗コントラストで観察で
きるようにしたものである。尚、第7図において、3は
光源、4はコレクタレンズ、6はコンデンサレンズ、8
は対物レンズである。FIG. 7 is a principle diagram of the optical system of the phase contrast microscope. The 0th-order diffracted light 1 modulated by the transmittance of the inspected object 7 is used as the background intensity, and the change in the refractive index or the thickness of the inspected object 7 is described. The phase change of the 1st or higher-order diffracted light 2 modulated according to the phase difference amount of the change of 1 The surface 10 allows the phase change due to the object 7 to be inspected to be observed with a light-dark contrast. In FIG. 7, 3 is a light source, 4 is a collector lens, 6 is a condenser lens, and 8 is a condenser lens.
Is an objective lens.
前述の0次回折光1と高次回折光2とを干渉させるため
に、振幅の大きな0次回折光はリングスリット5及び吸
収膜11によつて減衰される。このうち、吸収膜11の吸収
率は、生体観察等の位相差顕微鏡の主たる用途からいつ
て、被検査物体7の忠実度(通常の光学的顕微鏡で観察
した像との類似性)を大きく損わないように90%程度に
してある。このため、被検査物体7の微小な凹凸に対し
て弱いコントラストしか得られないという欠点がある。In order to cause the 0th-order diffracted light 1 and the high-order diffracted light 2 to interfere with each other, the 0th-order diffracted light having a large amplitude is attenuated by the ring slit 5 and the absorption film 11. Of these, the absorptivity of the absorption film 11 greatly impairs the fidelity of the object 7 to be inspected (similarity to an image observed with a normal optical microscope) from the main application of a phase contrast microscope such as biological observation. It is set to about 90% so as not to break it. For this reason, there is a drawback that only a weak contrast can be obtained with respect to the minute unevenness of the inspected object 7.
前述の吸収膜11の吸収率を高くすると、位相差量すなわ
ち被検査物体7の凹凸量の大きな部分のまわりにハロー
と呼ばれる光環12が生じる。このハローは、前述の吸収
膜11の吸収量が大きい程、また検出物(微小凹凸)の大
きさが小さい程大きく生じる。第8図は、位相差量の小
さい検出物Aに比し、位相差量の大きい検出物Bに大き
なハロー12が生じているところを示している。When the absorptance of the absorption film 11 is increased, an optical ring 12 called a halo is generated around a portion having a large amount of phase difference, that is, an unevenness amount of the object 7 to be inspected. This halo becomes larger as the amount of absorption of the absorption film 11 is larger and as the size of the detection object (fine irregularities) is smaller. FIG. 8 shows that the detected object B having a large amount of phase difference has a larger halo 12 than the detected object A having a small amount of phase difference.
透明基板上に例えば回路パターンを描く場合、微小凹凸
が存在すると回路は不良品となる。そこで、微小凹凸存
在有無の確認のためにハローを調べることは有効であ
る。しかし、ハローは、通常、背景信号レベル14に対
する検出信号レベル13と逆のレベルに発生するので、検
出ビデオ信号に対し単一の閾値を設定し信号2値化を行
ったのでは、検出信号レベル13とハロー12の両者を背景
信号レベル14と分離することができない。When, for example, drawing a circuit pattern on a transparent substrate, the circuit becomes a defective product if there are minute irregularities. Therefore, it is effective to examine the halo in order to confirm the presence / absence of minute unevenness. However, since the halo is usually generated at a level opposite to the detection signal level 13 with respect to the background signal level 14, if a single threshold is set for the detection video signal and signal binarization is performed, the detection signal level is Both 13 and halo 12 cannot be separated from the background signal level 14.
この検出信号レベル13とハロー12の両者を背景信号レベ
ル14と分離する方法として、第9図に示すように、高レ
ベル閾値18と低レベル閾値19の2つの閾値を用いて検出
信号を3値化する手法がある。しかし、この3値化を用
いた場合、前記検出信号レベル13とハロー12の両者を背
景信号レベル14と分離することができるが、通常、背景
信号レベルは第10図に示すようなシェーディングと呼
ばれる照明むらの影響を受けるので、雑音等を発生しな
い閾値レベルを設定するのは困難である。As a method of separating both the detection signal level 13 and the halo 12 from the background signal level 14, as shown in FIG. 9, the detection signal is tri-valued by using two thresholds, a high level threshold 18 and a low level threshold 19. There is a method to make it. However, when this ternarization is used, both the detection signal level 13 and the halo 12 can be separated from the background signal level 14, but the background signal level is usually called shading as shown in FIG. Since it is affected by uneven lighting, it is difficult to set a threshold level that does not generate noise or the like.
これに対し、アイイ-イ-イ- トランザクション コミュニケ-ションズ シオ-エム(IEE
E Trans.Comm., Com)-26(5),611(1978年)におけるT.フ
キヌキ(Fukinuki)による"ノッチレス バイ レベル クォンタイザ- フォ- ファクシミ
リ アンド イッツ エフェクト オン コ-ディング エッフィシャンシィ(Notchless Bi-l
evel Qnantizer for Facamile and Its Effect on Codi
ng Efficieney)"と題する文献において論じられている
浮動閾値の手法を用いる方法がある。しかし、この浮動
閾値による2値化は、第11図に示すように、シェーデ
ィング等の影響を除去することができるが、このままで
は前記検出信号レベル13とハロー12の両者の背景信号レ
ベル14と分離できないという欠点がある。On the other hand, IEE Transaction Communication SIO-M (IEE
E. Trans.Comm., Com) -26 (5), 611 (1978) by T. Fukinuki, "Notchless Bi-Level Quantizer-For-Facsimile and It's Effect on Coding Efficiency (Notchless Bi -l
evel Qnantizer for Facamile and Its Effect on Codi
ng Efficieney) ”is used in the literature. However, binarization by this floating threshold can eliminate the effects of shading, etc., as shown in FIG. However, there is a drawback in that the background signal level 14 of both the detection signal level 13 and the halo 12 cannot be separated as they are.
本発明の目的は、通常の光学顕微鏡では識別不可能な光
学的に透明な被検査物体の表面に存在する平面的に大き
な微小凹凸および小さな微小凹凸の両方を位相差顕微鏡
を用いて顕在化して、しかもシェーディング等の影響を
受けることなく、高感度に検出できるようにした欠陥検
査方法及びその装置を提供することにある。The object of the present invention is to visualize both the large and small fine unevenness in a plane existing on the surface of an optically transparent inspected object that cannot be identified by an ordinary optical microscope by using a phase contrast microscope. Moreover, it is an object of the present invention to provide a defect inspection method and an apparatus thereof capable of detecting with high sensitivity without being affected by shading and the like.
本発明は、上記目的を達成するために、被検査物体を照
明し、該被検査物体の厚さ若しくは屈折率に基づく位相
差量に応じて変調されて得られる回折光の内、0次回折
光をほぼ完全に吸収膜で遮蔽すると共に高次回折光を位
相板により位相の変化を与えて干渉された光像を光電変
換手段で受光して前記被検査物体の厚さ若しくは屈折率
に基づく位相差量に応じて平面的に大きな微小凹凸およ
び小さな微小凹凸を顕在化した位相差濃淡画像信号を検
出し、該検出された位相差濃淡画像信号に対して平均化
信号処理手段により部分的に平均化処理を施すことによ
つて得られた背景を示す滑らかな濃淡画像信号に対して
所定の正および負の閾値を付与して生成した第1および
第2の閾値信号を形成し、該形成された第1および第2
の閾値信号により前記位相差濃淡画像信号に対して閾値
処理して平面的に大きな微小凹凸欠陥および小さな微小
凹凸欠陥の両方を検出することを特徴とする欠陥検査方
法である。また本発明は、被検査物体を照明し、該被検
査物体の厚さ若しくは屈折率に基づく位相差量に応じて
変調されて得られる回折光の内、0次回折光をほぼ完全
に吸収膜で遮蔽すると共に高次回折光を位相板により位
相の変化を与えて干渉された光像を光電変化手段で受光
して前記被検査物体の厚さ若しくは屈折率に基づく位相
差量に応じて平面的に大きな微小凹凸および小さな微小
凹凸を顕在化した位相差濃淡画像信号を検出する位相差
顕微鏡光学系と、該相差顕微鏡光学系の光電変換手段で
検出された位相差濃淡画像信号に対して部分的に平均化
処理を施して背景を示す滑らかな濃淡画像信号を得る平
均化信号処理手段を有し、該平均化信号処理手段によっ
て得られた背景を示す滑らかな濃淡画像信号に対して所
定の正および負の閾値を付与して生成した第1および第
2の閾値値信号形成手段により形成された第1および第
2の閾値信号により前記相差顕微鏡光学系の光電変換手
段で検出された位相差濃淡画像信号に対して閾値処理し
て平面的に大きな微小凹凸欠陥および小さな微小凹凸欠
陥の両方を検出する微小凹凸欠陥検出手段とを備えたこ
とを特徴とする欠陥検査装置である。即ち、本発明で
は、透明な被検査物体の表面上に微小凹凸欠陥が存在し
ていた場合、この欠陥による濃淡画像を明瞭にして、欠
陥検出信号とハローとを背景信号レベルと分離しやすく
し、更に、シェーディング等の影響を受けにくくする。
そこで、微小凹凸欠陥による画像の明暗コントラストを
明瞭とする為、被検査物体を透過照明して得られる回折
光のうち0次回折光を減衰あるいは完全に遮蔽した。そ
して、少なくとも1次あるいはそれ以上の高次回折光に
より被検査物体の像を得、この像から欠陥を検出するよ
うにした。In order to achieve the above object, the present invention illuminates an object to be inspected and, among diffracted light obtained by being modulated according to the amount of phase difference based on the thickness or refractive index of the object to be inspected, the 0th order diffracted light Is almost completely shielded by an absorption film, and a high-order diffracted light is given a phase change by a phase plate to receive an interference optical image, which is received by a photoelectric conversion means to obtain a phase difference based on the thickness or refractive index of the object to be inspected. A phase difference grayscale image signal in which a large minute unevenness and a small minute unevenness are exposed in a plane according to the amount is detected, and the averaged signal processing means partially averages the detected phase difference grayscale image signal. The first and second threshold signals generated by applying predetermined positive and negative thresholds to the smooth grayscale image signal indicating the background obtained by performing the processing are formed, and the formed first and second threshold signals are formed. First and second
The defect inspection method is characterized by performing threshold processing on the phase difference grayscale image signal with the threshold signal of to detect both large and small fine unevenness defects in a plane. Further, according to the present invention, of the diffracted light obtained by illuminating the object to be inspected and being modulated according to the phase difference amount based on the thickness or the refractive index of the object to be inspected, the 0th-order diffracted light is almost completely absorbed. It shields and receives a high-order diffracted light by changing the phase by a phase plate to receive the interfering light image by the photoelectric changing means, and planarly according to the phase difference amount based on the thickness or the refractive index of the object to be inspected. A phase-contrast microscope optical system for detecting a phase-difference gray-scale image signal in which large minute irregularities and small minute irregularities are exposed, and a phase-difference gray-scale image signal partially detected by photoelectric conversion means of the phase-contrast microscope optical system. An averaging signal processing unit that obtains a smooth grayscale image signal indicating a background by performing averaging processing is provided, and a predetermined positive and negative values are applied to the smooth grayscale image signal indicating the background obtained by the averaging signal processing unit. Give a negative threshold Thresholding the phase difference grayscale image signal detected by the photoelectric conversion means of the phase contrast microscope optical system by the first and second threshold value signals formed by the first and second threshold value signal forming means Then, the defect inspecting apparatus is provided with a minute unevenness defect detecting means for detecting both a large minute unevenness defect and a small minute unevenness defect in a plan view. That is, in the present invention, when a minute unevenness defect is present on the surface of the transparent object to be inspected, the grayscale image due to this defect is made clear so that the defect detection signal and the halo can be easily separated from the background signal level. Furthermore, it is made less susceptible to the effects of shading and the like.
Therefore, in order to make clear the light-dark contrast of the image due to the minute unevenness defect, the 0th-order diffracted light of the diffracted light obtained by transmitting and illuminating the inspected object is attenuated or completely shielded. Then, an image of the object to be inspected is obtained by at least the first-order or higher-order diffracted light, and the defect is detected from this image.
本発明の実施態様として、検出像を光電変換して欠陥信
号を背景から分離する。これは、例えば第1図に示すよ
うに、背景レベルに対応した閾値レベルから若干高いレ
ベルにシフトした閾値レベルと若干低いレベルにシフト
した閾値レベルの2つの閾値を作成し、これによつて検
出した電気信号を背景と欠陥とに分離すれば、雑音なく
高精度に分離を行うことができる。この分離のための判
定は、検出信号レベルが高レベル閾値より大きいか、あ
るいは低レベル閾値より小さいかを判定すればよい。As an embodiment of the present invention, the detected image is photoelectrically converted to separate the defect signal from the background. For example, as shown in FIG. 1, two thresholds are created, one of which is a threshold level corresponding to the background level and the other is a threshold level shifted to a slightly higher level, and a threshold level shifted to a slightly lower level. If the generated electric signal is separated into the background and the defect, the separation can be performed with high accuracy without noise. The determination for this separation may be performed by determining whether the detection signal level is higher than the high level threshold or lower than the low level threshold.
以下、本発明の一実施例を第2図乃至第6図により説明
する。An embodiment of the present invention will be described below with reference to FIGS. 2 to 6.
第2図は検出光学系の構成図である。この検出光学系30
において、透過照明光源22より発せられた透過照明光33
は、コレクタレンズ23、リングスリット24、コンデンサ
レンズ25を通つて被検査物体26を照明する。透過照明光
33によつて、被検査物体26の透過率に基づき主として振
幅変調された0次回折光37と、被検査物体26の厚さある
いは屈折率に基づいて主として試料の位相差量に応じて
振幅変調された高次回折34とが被検査物体26から発せら
れる。高次回折光34は、位相板28によって1/4波長また
は−1/4波長分の位相変化を受け、0次回折光37は、吸
収膜29によって著しく減衰あるいは完全に遮蔽される。
これにより、光電変換素子31の像面上には、主として被
検査物体26の位相差量に応じた濃淡画像が得られ、被検
査物体26上の微小凹凸欠陥を光電変換することができ
る。FIG. 2 is a block diagram of the detection optical system. This detection optical system 30
In, the transmitted illumination light 33 emitted from the transmitted illumination light source 22
Illuminates the object to be inspected 26 through the collector lens 23, the ring slit 24 and the condenser lens 25. Transmitted illumination light
According to 33, the 0th-order diffracted light 37 whose amplitude is mainly modulated based on the transmittance of the object to be inspected 26 and the amplitude modulation according to the phase difference amount of the sample based on the thickness or the refractive index of the object to be inspected 26. Higher order diffraction 34 and is emitted from the inspected object 26. The high-order diffracted light 34 undergoes a phase change of 1/4 wavelength or -1/4 wavelength by the phase plate 28, and the 0th-order diffracted light 37 is significantly attenuated or completely shielded by the absorption film 29.
As a result, a grayscale image mainly corresponding to the phase difference amount of the inspected object 26 is obtained on the image plane of the photoelectric conversion element 31, and the minute unevenness defect on the inspected object 26 can be photoelectrically converted.
この光電変換された信号33は、2値化回路33によって背
景と欠陥とに分離され、検出出力34として出力される。The photoelectrically converted signal 33 is separated into a background and a defect by the binarization circuit 33 and output as a detection output 34.
第3図は2値化回路32の一例を示す。この2値化回路32
は、光電変換信号33順次部分的に積分し、該信号33の平
均値を出力する積分回路40と、積分回路40の出力値及び
閾値レベルVHの和と光電変換信号33とを比較する比較回
路41と、積分回路40の出力値から閾値レベルVLを減じた
値を光電変換信号33と比較してその結果の反転値を出力
する比較回路42と、両比較回路41と42の出力の論理和を
とり検出出力34を出力する論理和回路43とから構成して
ある。FIG. 3 shows an example of the binarization circuit 32. This binarization circuit 32
The photoelectric conversion signal 33 is partially integrated in order, and an integration circuit 40 that outputs the average value of the signal 33 and a comparison that compares the sum of the output value of the integration circuit 40 and the threshold level V H with the photoelectric conversion signal 33. A circuit 41, a comparison circuit 42 that compares the value obtained by subtracting the threshold level V L from the output value of the integration circuit 40 with the photoelectric conversion signal 33 and outputs the inverted value of the result, and outputs of both comparison circuits 41 and 42 It is composed of a logical sum circuit 43 which takes a logical sum and outputs a detection output 34.
比較回路41は、第4図に示すように、信号33の平均値よ
りレベルVHだけ高い値に設定された高レベル閾値以上の
入力光電変換信号があつたとき、欠陥有りとする検出信
号を出力する。As shown in FIG. 4, the comparator circuit 41 detects a defect detection signal when there is an input photoelectric conversion signal equal to or higher than a high level threshold value set to a value higher by the level V H than the average value of the signal 33. Output.
比較回路42は、信号33の平均値よりレベルVLだけ低い値
に設定された低レベル閾値以下の入力光電変換信号があ
つたとき、欠陥有りとする検出信号を出力する。The comparator circuit 42 outputs a detection signal indicating that there is a defect when there is an input photoelectric conversion signal equal to or lower than the low level threshold value set to a value lower by the level V L than the average value of the signal 33.
このため、両比較回路41,42の出力の論理和をとること
により、欠陥の有無が判定される。Therefore, the presence or absence of a defect is determined by taking the logical sum of the outputs of both comparison circuits 41 and 42.
第5図は第2図に示す2値化回路32の第2実施例回路で
ある。FIG. 5 shows a second embodiment circuit of the binarizing circuit 32 shown in FIG.
本実施例における2値化回路32は、比較回路45、遅延回
路46等で構成した第1欠陥検出回路47と、比較回路48、
遅延回路49、反転回路50等で構成した第2欠陥検出回路
51と、論理和回路52とで成る。The binarization circuit 32 in this embodiment includes a first defect detection circuit 47 composed of a comparison circuit 45, a delay circuit 46 and the like, a comparison circuit 48,
Second defect detection circuit composed of delay circuit 49, inverting circuit 50, etc.
51 and an OR circuit 52.
第1欠陥検出回路47は、比較回路45の入力端子と入
力端子に光電変換信号33が供給され、入力端子には更
に比較回路45の出力が遅延回路46を介して帰還され、
入力端子には更にVH<0レベルが加算されている。In the first defect detection circuit 47, the photoelectric conversion signal 33 is supplied to the input terminal and the input terminal of the comparison circuit 45, and the output of the comparison circuit 45 is fed back to the input terminal via the delay circuit 46.
V H <0 level is further added to the input terminal.
ここで、第1欠陥検出回路47の入力電圧をVi(n)、出力
電圧をV0(n)とする。第5図のA点での電圧はV0(n-1)で
ある為、比較回路47の入力側の利得を1/2、入力側
の利得を1に調整すれば、 となる。第1項は入力信号33の部分的な平均値となり、
第2項は入力信号33からレベルVHを減じた値となる。こ
の信号レベルと図に示すと第6図の様になる。従って、
第1欠陥検出回路47は、第6図の例ではハローを検出で
きる。第2欠陥検出回路51の動作も第1欠陥回路47と同
様である。Here, the input voltage and the output voltage of the first defect detection circuit 47 are V i (n) and V 0 (n) , respectively. Since the voltage at the point A in FIG. 5 is V 0 (n-1) , if the gain on the input side of the comparison circuit 47 is adjusted to 1/2 and the gain on the input side is adjusted to 1, Becomes The first term is the partial average value of the input signal 33,
The second term is a value obtained by subtracting the level V H from the input signal 33. FIG. 6 shows the signal level and the figure. Therefore,
The first defect detection circuit 47 can detect a halo in the example of FIG. The operation of the second defect detection circuit 51 is similar to that of the first defect circuit 47.
この為、本実施例では比較回路45,48の各側側の利
得を調整すれば、被検査物体26表面上の微小凹凸を精度
良く検出できる。Therefore, in the present embodiment, by adjusting the gains on the respective sides of the comparison circuits 45 and 48, minute irregularities on the surface of the inspected object 26 can be accurately detected.
本発明によれば、通常の光学顕微鏡では識別不可能な光
学的に透明な被検査物体の表面に存在する平面的に大き
な微小凹凸および小さな微小凹凸の両方を、位相差顕微
鏡を用いて顕在化されたハロー(光環)および検出信号
レベルの両者を背景信号レベルから分離して検出して、
シェーディング等の影響を受けることなく、高感度に検
出することができる効果を奏する。ADVANTAGE OF THE INVENTION According to the present invention, both of the planarly large fine irregularities and small fine irregularities present on the surface of an optically transparent inspected object that cannot be identified by a normal optical microscope are made visible by using a phase contrast microscope. Both the detected halo (optical ring) and the detected signal level are detected separately from the background signal level,
It is possible to detect with high sensitivity without being affected by shading or the like.
第1図は本発明方法の説明図、第2図は本発明の一実施
例を適用した検出光学系の構成図、第3図は第2図に示
す2値化回路のブロック回路図、第4図は第3図に示す
回路の動作説明図、第5図は2値化回路の別実施例のブ
ロック回路図、第6図は第5図に示す回路の動作説明
図、第7図は一般の位相差顕微鏡の光学系構成図、第8
図はハローの説明図、第9図は3値化の説明図、第10
図はシェーディングの説明図、第11図は浮動閾値2値
化の説明図である。 26…被検査物体、29…吸収膜、31…光電変換素子、32…
2値化回路、34…高次回折光、37…0次回折光。1 is an explanatory view of the method of the present invention, FIG. 2 is a configuration diagram of a detection optical system to which an embodiment of the present invention is applied, FIG. 3 is a block circuit diagram of a binarizing circuit shown in FIG. 4 is an operation explanatory view of the circuit shown in FIG. 3, FIG. 5 is a block circuit diagram of another embodiment of the binarization circuit, FIG. 6 is an operation explanatory view of the circuit shown in FIG. 5, and FIG. Optical system configuration diagram of general phase contrast microscope, 8th
Figure is an illustration of halo, Figure 9 is an illustration of ternarization, 10th
FIG. 11 is an explanatory diagram of shading, and FIG. 11 is an explanatory diagram of binarization of a floating threshold. 26 ... Inspected object, 29 ... Absorption film, 31 ... Photoelectric conversion element, 32 ...
Binarization circuit, 34 ... High-order diffracted light, 37 ... 0-order diffracted light.
Claims (2)
若しくは屈折率に基づく位相差量に応じて変調されて得
られる回折光の内、0次回折光をほぼ完全に吸収膜で遮
蔽すると共に高次回折光を位相板により位相の変化を与
えて干渉された光像を光電変換手段で受光して前記被検
査物体の厚さ若しくは屈折率に基づく位相差量に応じて
平面的に大きな微小凹凸および小さな微小凹凸を顕在化
した位相差濃淡画像信号を検出し、該検出された位相差
濃淡画像信号に対して平均化信号処理手段により部分的
に平均化処理を施すことによって得られた背景を示す滑
らかな濃淡画像信号に対して所定の正および負の閾値を
付与して生成した第1および第2の閾値信号を形成し、
該形成された第1および第2の閾値信号により前記位相
差濃淡画像信号に対して閾値処理して平面的に大きな微
小凹凸欠陥および小さな微小凹凸欠陥の両方を検出する
ことを特徴とする欠陥検査方法。1. A diffracted light obtained by illuminating an object to be inspected and modulated according to a phase difference amount based on the thickness or refractive index of the object to be inspected is almost completely absorbed by a 0-th order diffracted light. It shields and receives a high-order diffracted light by changing the phase by a phase plate to receive the interfered optical image by photoelectric conversion means, and planarly according to the amount of phase difference based on the thickness or refractive index of the object to be inspected. It is obtained by detecting a phase-difference gray-scale image signal in which large minute unevenness and small minute unevenness are revealed, and partially averaging the detected phase-difference gray-scale image signal by the averaging signal processing means. Forming a first and second threshold signal generated by applying predetermined positive and negative threshold values to a smooth grayscale image signal indicating the background,
A defect inspection characterized by performing threshold processing on the phase difference gray-scale image signal by the formed first and second threshold signals to detect both a large fine unevenness defect and a small fine unevenness defect in a plane. Method.
若しくは屈折率に基づく位相差量に応じて変調されて得
られる回折光の内、0次回折光をほぼ完全に吸収膜で遮
蔽すると共に高次回折光を位相板により位相の変化を与
えて干渉された光像を光電変換手段で受光して前記被検
査物体の厚さ若しくは屈折率に基づく位相差量に応じて
平面的に大きな微小凹凸および小さな微小凹凸を顕在化
した位相差濃淡画像信号を検出する位相差顕微鏡光学系
と、該相差顕微鏡光学系の光電変換手段で検出された位
相差濃淡画像信号に対して部分的に平均化処理を施して
背景を示す滑らかな濃淡画像信号を得る平均化信号処理
手段を有し、該平均化信号処理手段によつて得られた背
景を示す滑らかな濃淡画像信号に対して所定の正および
負の閾値を付与して生成した第1および第2の閾値信号
を形成する閾値信号形成手段と、該閾値信号形成手段に
より形成された第1および第2の閾値信号により前記相
差顕微鏡光学系の光電変換手段で検出された位相差濃淡
画像信号に対して閾値処理して平均的に大きな微小凹凸
欠陥および小さな微小凹凸欠陥の両方を検出する微小凹
凸欠陥検出手段とを備えたことを特徴とする欠陥検査装
置。2. A diffracted light obtained by illuminating an object to be inspected and modulated according to a phase difference amount based on a thickness or a refractive index of the object to be inspected is almost completely absorbed by a zero-order diffracted light. It shields and receives a high-order diffracted light by changing the phase by a phase plate to receive the interfered optical image by photoelectric conversion means, and planarly according to the amount of phase difference based on the thickness or refractive index of the object to be inspected. A phase-contrast microscope optical system for detecting a phase-difference gray-scale image signal in which large minute irregularities and small minute irregularities are exposed, and a phase-difference gray-scale image signal partially detected by photoelectric conversion means of the phase-contrast microscope optical system. An averaging signal processing means for performing an averaging process to obtain a smooth grayscale image signal indicating the background is provided, and a predetermined grayscale image signal indicating the background obtained by the averaging signal processing means is predetermined. Give positive and negative thresholds Threshold signal forming means for forming the generated first and second threshold signals, and the first and second threshold signals formed by the threshold signal forming means are detected by the photoelectric conversion means of the phase contrast microscope optical system. A defect inspecting apparatus, comprising: a minute unevenness defect detection unit that performs threshold processing on a phase difference grayscale image signal to detect both large small unevenness defects and small small unevenness defects on average.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP409085A JPH061178B2 (en) | 1985-01-16 | 1985-01-16 | Defect inspection method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP409085A JPH061178B2 (en) | 1985-01-16 | 1985-01-16 | Defect inspection method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61164105A JPS61164105A (en) | 1986-07-24 |
| JPH061178B2 true JPH061178B2 (en) | 1994-01-05 |
Family
ID=11575094
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP409085A Expired - Lifetime JPH061178B2 (en) | 1985-01-16 | 1985-01-16 | Defect inspection method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH061178B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013141539A1 (en) * | 2012-03-21 | 2013-09-26 | Korea Research Institute Of Standards And Science | Transparent substrate monitoring apparatus and transparent substrate monitoring method |
| KR101319555B1 (en) * | 2012-03-21 | 2013-10-21 | 한국표준과학연구원 | Thickness change measurement apparatus and method |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9610471D0 (en) * | 1996-05-18 | 1996-07-24 | Univ Nottingham | Optical measurement |
| JP2006292617A (en) * | 2005-04-13 | 2006-10-26 | Nec Electronics Corp | Defect inspection device and method of inspecting surface of substrate |
| CN104204720B (en) * | 2012-03-21 | 2017-03-01 | 韩国标准科学研究院 | Transparency carrier monitoring device and transparency carrier monitoring method |
-
1985
- 1985-01-16 JP JP409085A patent/JPH061178B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| 久保田広「波動光学」(1971年2月2日)岩波書店P.426−427 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013141539A1 (en) * | 2012-03-21 | 2013-09-26 | Korea Research Institute Of Standards And Science | Transparent substrate monitoring apparatus and transparent substrate monitoring method |
| KR101319555B1 (en) * | 2012-03-21 | 2013-10-21 | 한국표준과학연구원 | Thickness change measurement apparatus and method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61164105A (en) | 1986-07-24 |
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