JPH0645447B2 - Purification method of silicon hydride - Google Patents
Purification method of silicon hydrideInfo
- Publication number
- JPH0645447B2 JPH0645447B2 JP61052666A JP5266686A JPH0645447B2 JP H0645447 B2 JPH0645447 B2 JP H0645447B2 JP 61052666 A JP61052666 A JP 61052666A JP 5266686 A JP5266686 A JP 5266686A JP H0645447 B2 JPH0645447 B2 JP H0645447B2
- Authority
- JP
- Japan
- Prior art keywords
- sio
- silicon hydride
- molar ratio
- zeolite
- adsorbent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title claims description 26
- 229910052990 silicon hydride Inorganic materials 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 15
- 238000000746 purification Methods 0.000 title description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 23
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 22
- 239000010457 zeolite Substances 0.000 claims description 22
- 239000003463 adsorbent Substances 0.000 claims description 19
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 claims description 19
- 229910021536 Zeolite Inorganic materials 0.000 claims description 17
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052680 mordenite Inorganic materials 0.000 claims description 5
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000001179 sorption measurement Methods 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 150000001768 cations Chemical class 0.000 description 8
- -1 SiH 4 Chemical compound 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000000295 fuel oil Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002808 molecular sieve Substances 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 2
- 229910000323 aluminium silicate Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical group 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 150000007530 organic bases Chemical class 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 1
- LCKIEQZJEYYRIY-UHFFFAOYSA-N Titanium ion Chemical compound [Ti+4] LCKIEQZJEYYRIY-UHFFFAOYSA-N 0.000 description 1
- FHKPLLOSJHHKNU-INIZCTEOSA-N [(3S)-3-[8-(1-ethyl-5-methylpyrazol-4-yl)-9-methylpurin-6-yl]oxypyrrolidin-1-yl]-(oxan-4-yl)methanone Chemical compound C(C)N1N=CC(=C1C)C=1N(C2=NC=NC(=C2N=1)O[C@@H]1CN(CC1)C(=O)C1CCOCC1)C FHKPLLOSJHHKNU-INIZCTEOSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910001429 cobalt ion Inorganic materials 0.000 description 1
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000012013 faujasite Substances 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- RVPVRDXYQKGNMQ-UHFFFAOYSA-N lead(2+) Chemical compound [Pb+2] RVPVRDXYQKGNMQ-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- 229910001437 manganese ion Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 150000004681 metal hydrides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Description
【発明の詳細な説明】 技術分野 本発明は、一般式SinH2n+2(nは1,2,3又は4)で
表わされる水素化ケイ素、特にはモノシラン(SiH4)、
ジシラン(Si2H6)中に微量含まれるホスフィン(PH3)
を除去し水素化ケイ素を精製する方法に関する。TECHNICAL FIELD The present invention relates to a silicon hydride represented by the general formula SinH 2n + 2 (n is 1, 2, 3 or 4), particularly monosilane (SiH 4 ),
A small amount of phosphine (PH 3 ) contained in disilane (Si 2 H 6 ).
And a method for purifying silicon hydride.
背景技術 近年エレクトロニクス工業の発展に伴い、多結晶シリコ
ンあるいはアモルファスシリコン等の半導体用のシリコ
ンの需要が急激に増大している。水素化ケイ素はかかる
半導体用シリコンの製造用原料として最近その重要性を
増しており、今後の需要増加が期待されている。BACKGROUND ART In recent years, with the development of the electronics industry, demand for semiconductor silicon such as polycrystalline silicon or amorphous silicon has been rapidly increasing. Silicon hydride has recently become more important as a raw material for manufacturing such silicon for semiconductors, and it is expected that demand will increase in the future.
これら水素化ケイ素の製造方法としては、以下に例示す
るようないくつかの方法が知られているがいずれの方法
を採用するにせよ通常合成された水素化ケイ素ガス中に
は微量 のPH3が含まれる。その含有量は製造法によつても異な
るが、たとえば上記、による方法で製造した水素化
ケイ素中には濃度百ppm前後のPH3が含有される。半導体
ガスとして使用される水素化ケイ素中における不純物と
してのPH3の影響は大きく、通常その含有量を10−9
以下(ppb以下)にする必要がある。As a method for producing these silicon hydrides, several methods such as those shown below are known, but whichever method is adopted, the amount of silicon hydride gas usually synthesized is very small. PH 3 included. Although the content varies depending on the production method, for example, PH 3 having a concentration of about 100 ppm is contained in the silicon hydride produced by the above method. The effect of PH 3 as an impurity in silicon hydride used as a semiconductor gas is large, and its content is usually 10 −9.
It should be below (ppb or less).
従来技術 水素化ケイ素たとえばSiH4中における微量のPH3を除去
する方法としては、吸着剤を用いるのが一般的であり、
例えば以下に例示するような方法が知られている。すな
わち、吸着剤として、合成ゼオライトAまたは合成ゼオ
ライトXを使用するもの(特公昭36−1774)、シ
ランを殆ど吸着しない均一細孔径を有するゼオライト
(例えば合成ゼオライト3A,4A)中の交換可能な陽
イオンを2価の陽イオン、特には亜鉛、鉛に交換したも
の(特公昭48−41437、48−41439)、合
成ゼオライト4A中のナトリウムイオンを2価の陽イオ
ン、あるいは銀イオンに交換したもの(特開昭48−7
5475、特開昭59−30711)、活性炭および合
成ゼオライト−4Aを併用するもの(特開昭58−69
715、58−172220)、水素吸蔵用金属材料ま
たは金属水素化物を使用するもの(特開昭58−120
511)などの方法が報告されている。しかしながらこ
れらの吸着剤は吸着容量が小さいこと、シランの吸着ロ
スが大きいこと、再生が不可能なことなどの種々の問題
があった。Prior Art As a method for removing a trace amount of PH 3 in silicon hydride such as SiH 4 , it is common to use an adsorbent,
For example, the following methods are known. That is, the one using synthetic zeolite A or the synthetic zeolite X as the adsorbent (Japanese Patent Publication No. 36-1774) and the exchangeable positive catalyst in the zeolite having a uniform pore size that hardly adsorbs silane (for example, synthetic zeolite 3A, 4A). Ions exchanged with divalent cations, especially zinc and lead (Japanese Patent Publication No. 48-41437, 48-41439), sodium ions in synthetic zeolite 4A exchanged with divalent cations or silver ions. (JP-A-48-7
5475, JP-A-59-30711, combined use of activated carbon and synthetic zeolite-4A (JP-A-58-69).
715, 58-172220), using a hydrogen storage metal material or a metal hydride (JP-A-58-120).
511) and other methods have been reported. However, these adsorbents have various problems such as a small adsorption capacity, a large silane adsorption loss, and an inability to be regenerated.
本発明者等は、水素化ケイ素中のホスフィンを選択的に
除去できる吸着剤の開発に鋭意努力し、吸着剤としてシ
リカ含有量の大きいゼオライトを用いることによりこれ
らの問題点が解決できることを見出し、本発明を完成し
た。The present inventors have made diligent efforts to develop an adsorbent capable of selectively removing phosphine in silicon hydride, and found that these problems can be solved by using a zeolite having a large silica content as the adsorbent, The present invention has been completed.
発明の要旨 本発明はホスフィンを含有する水素化ケイ素を、SiO
2およびAl2O3を構成成分に含み、かつSiO2と
Al2O3の含有モル比(SiO2/Al2O3)
モル比が5以上であるモルデナイト以外の合成あるいは
天然のゼオライト吸着剤で処理することを特徴とする水
素化ケイ素の精製方法である。SUMMARY OF THE INVENTION The present invention provides silicon hydride containing phosphine
2 and Al 2 O 3 as constituent components, and the molar ratio of SiO 2 and Al 2 O 3 contained (SiO 2 / Al 2 O 3 ).
A method for purifying silicon hydride, which comprises treating with a synthetic or natural zeolite adsorbent other than mordenite having a molar ratio of 5 or more.
発明の詳細な開示 以下、本発明を詳細に説明する。Detailed Disclosure of the Invention Hereinafter, the present invention will be described in detail.
本発明の対象とする水素化ケイ素とは、一般式SinH2n+2
(nは1,2,3又は4)で表わされるものであるが、
特にはSiH4が最も好ましい。またもちろんこれらは混合
物であつても、またPH3以外のガスを含むものであつて
も良い。The silicon hydride that is the object of the present invention has the general formula Si n H 2n + 2
(N is 1, 2, 3 or 4),
Particularly, SiH 4 is most preferable. Of course, these may be a mixture or may contain a gas other than PH 3 .
本発明における吸着剤とは、SiO2およびAl2O3
を構成成分に含み、かつSiO2とAl2O3の含有モル比(SiO
2/Al2O3)モル比が5以上の、モルデナイト以外の天然
あるいは人工のゼオライトである。ゼオライトの化学組
成はアルカリ金属、アルカリ土類金属または他の金属を
含有するアルミノケイ酸塩である。(SiO2/Al2O3)
モル比が従来のものより高い、いわゆるハイシリカゼオ
ライトは近年数多くの種類のものが合成できるようにな
つてきた。The adsorbent in the present invention means SiO 2 and Al 2 O 3.
And the molar ratio of SiO 2 and Al 2 O 3 (SiO 2
A natural or artificial zeolite other than mordenite having a 2 / Al 2 O 3 ) molar ratio of 5 or more. The chemical composition of zeolites is an aluminosilicate containing alkali metals, alkaline earth metals or other metals. (SiO 2 / Al 2 O 3 )
In recent years, many kinds of so-called high-silica zeolites having a higher molar ratio than the conventional ones can be synthesized.
具体的には、例えばシリカ源およびアルミナ源から4級
アンモニウム化合物アミン類等の有機塩基を用いて近年
モービルオイル社、ユニオンカーバイド社、ICI社、
帝人油化、新燃料油開発技術研究組合等で合成されたZ
SM、NU、EU、TPZ、ISI等の各ゼオライトに
代表されるもの(例えばUS Pat3308069、US Pat370
2886、USPat3950496、特開昭56−73618、特公昭
56−49850、特開昭57−200218、特開昭
57−149819、特開昭57−95821等);有
機塩基のかわりにアルコール、エーテル、ケトン、エス
テル、カルボン酸等の有機化合物を用いてICI社、三
菱重工、新燃料油開発技術研究組合等で合成された高シ
リカゼオライト;ZSM−5を種結晶とし、アルカリ金
属の水酸化物等の無機塩基を用いてモービルオイル社、
出光興産で合成された高シリカゼオライト(例えば特開
昭56−37215、特開昭57−7819);脱アル
ミニウム処理によつてシリカリッチとしたゼオライトな
どがいずれも好適に用いうる。更に上記のゼオライトの
交換可能な陽イオンの全部又は一部をマグネシウムイオ
ン、カウシウムイオン、マンガンイオン、亜鉛イオン、
鉛イオン、コバルトイオン等の2価の陽イオン、又はプ
ロトンで交換したもの、およびチタンイオン、ホウ素イ
オンなどの多価の陽イオンを含むアルミノケイ酸塩でも
よい。プロトンによる陽イオンの交換は、通常の方法、
すなわち塩酸や塩化アンモニウムなどの水溶液中にて行
ない得る。Specifically, for example, using organic bases such as quaternary ammonium compound amines from a silica source and an alumina source, Mobile Oil Co., Union Carbide Co., ICI Co., Ltd.
Z synthesized by Teijin Oilification, New Fuel Oil Development Technology Research Association, etc.
Those represented by zeolites such as SM, NU, EU, TPZ, and ISI (for example, US Pat3308069, US Pat370
2886, USPat 3950496, JP-A-56-73618, JP-B-56-49850, JP-A-57-200218, JP-A-57-149819, JP-A-57-95821); alcohols, ethers, ketones instead of organic bases. , High silica zeolite synthesized by organic compounds such as ester, carboxylic acid, etc. by ICI, Mitsubishi Heavy Industries, New Fuel Oil Development Technology Research Association, etc .; ZSM-5 as seed crystal, alkali metal hydroxide, etc. Mobile Oil Company using an inorganic base,
High silica zeolites synthesized by Idemitsu Kosan (for example, JP-A-56-37215 and JP-A-57-7819); and zeolites rich in silica by dealumination treatment can all be suitably used. Further, all or part of the exchangeable cations of the above-mentioned zeolite are magnesium ions, causium ions, manganese ions, zinc ions,
It may be an aluminosilicate containing a divalent cation such as lead ion or cobalt ion, or one exchanged with a proton, and a polyvalent cation such as titanium ion or boron ion. The exchange of cations by protons is the usual method,
That is, it can be carried out in an aqueous solution of hydrochloric acid or ammonium chloride.
本発明に適用されるゼオライトは、ゼオライト中のSiO2
とAl2O3の組成割合がモル比で5以上である、モルデナ
イト以外のゼオライトで、その結晶構造は特に制限され
ない。The zeolite applied to the present invention is SiO 2 in zeolite.
Zeolite other than mordenite in which the composition ratio of Al 2 O 3 and Al 2 O 3 is 5 or more, and its crystal structure is not particularly limited.
本発明は以上のごとき(SiO2/Al2O3)モル比≦5のモ
ルデナイト以外のゼオライト吸着剤によりホスフィンを
含有する水素化ケイ素を処理し精製するものであるが、
次にゼオライトを用いての精製の条件ついて述べる。The present invention is to treat and purify silicon hydride containing phosphine with a zeolite adsorbent other than mordenite having a (SiO 2 / Al 2 O 3 ) molar ratio of ≦ 5 as described above.
Next, the conditions for purification using zeolite will be described.
吸着処理は、減圧下でも加圧下でも行なうことができる
が好ましくは常圧以上である。水素化ケイ素は気相でも
液相でも良いが通常は気相で行うのが好ましい。吸着処
理温度は、本発明において特に制限するものではないが
水素化ケイ素の種類によって異なり、好ましくはSiH4で
は−80乃至30℃、Si2H6では−30乃至50℃、Si3
H8では0乃至100℃、Si4H10では0乃至150℃であ
る。この範囲より低温では水素ケイ素、特にモノシラン
の吸着が顕著となり好ましくなく、高温ではPH3の吸着
量が減少するので好ましくない。The adsorption treatment can be carried out under reduced pressure or under pressure, but is preferably atmospheric pressure or higher. Silicon hydride may be in a gas phase or a liquid phase, but it is usually preferable to carry out in a gas phase. The adsorption treatment temperature is not particularly limited in the present invention, but it varies depending on the type of silicon hydride, and is preferably -80 to 30 ° C for SiH 4 , -30 to 50 ° C for Si 2 H 6 , and Si 3
It is 0 to 100 ° C. for H 8 and 0 to 150 ° C. for Si 4 H 10 . At temperatures lower than this range, adsorption of silicon hydrogen, particularly monosilane becomes remarkable, which is not preferable, and at high temperatures, the amount of PH 3 adsorbed decreases, which is not preferable.
水素化ケイ素中のPH3の含有量には特に制限はないが、
通常1%以下、特には0.1%以下である。また水素化ケ
イ素中にはPH3以外のガス(例えば、水素、窒素、稀ガ
ス、メタン等)が含まれても良い。The content of PH 3 in silicon hydride is not particularly limited,
It is usually 1% or less, particularly 0.1% or less. Further, silicon hydride may contain a gas other than PH 3 (for example, hydrogen, nitrogen, rare gas, methane, etc.).
また本発明以外の吸着剤と併用することも可能である。It is also possible to use together with an adsorbent other than the present invention.
本発明におけるPH3除去用の新規な吸着剤は従来公知の
吸着剤に比較し吸着容量が大きいことが特徴である。The novel adsorbent for removing PH 3 in the present invention is characterized by having a larger adsorption capacity than conventionally known adsorbents.
以下、本発明を実施例によつて説明する。Hereinafter, the present invention will be described with reference to examples.
<実施例1> 内径3mm、長さ42mmの吸着管に、ゼオライトTSZ−
320NAA(東洋曹達社製、(SiO2/Al2O3)モル比
=5.6、フォージャサイト型構造、30乃至60メッ
シュ)0.25gを充填した。400℃にてヘリウム中1時
間、減圧下(0.2mmHg)2時間処理した後、吸着管の温
度を−20℃に設定し、PH3を279ppm含むSiH4ガスを
流量36ml/minの速度(線速度8.5cm/sec、接触時間
0.49sec)で流通させた。吸着管からの出口ガス中のPH3
濃度は、逐次FPDを検出器とするガスクロマトグラフ
ィーにより分析した。なお、低濃度のPH3の分析は本発
明者らが提案している濃縮分析法によつた。<Example 1> Zeolite TSZ-is placed in an adsorption tube having an inner diameter of 3 mm and a length of 42 mm.
320NAA (Toyo Soda Co., Ltd. (SiO 2 / Al 2 O 3 ) molar ratio
= 5.6, faujasite structure, 30 to 60 mesh). After treatment in helium at 400 ° C for 1 hour and under reduced pressure (0.2mmHg) for 2 hours, the temperature of the adsorption tube was set to -20 ° C and SiH 4 gas containing 279ppm of PH 3 was supplied at a flow rate of 36ml / min (line). Speed 8.5 cm / sec, contact time
It was distributed in 0.49 sec). PH 3 in the exit gas from the adsorption tube
The concentration was sequentially analyzed by gas chromatography using FPD as a detector. The low-concentration PH 3 was analyzed by the concentration analysis method proposed by the present inventors.
結果を第1図に示す。第1図より、該吸着容量(吸着管
出口のpH3濃度が10ppbとなる点、以下同じ)は約4mg
・PH3/g吸着剤であることがわかつた。The results are shown in Fig. 1. From Fig. 1, the adsorption capacity (the point where the pH 3 concentration at the adsorption tube outlet is 10 ppb, the same applies hereinafter) is approximately 4 mg.
・ It was found to be a PH 3 / g adsorbent.
<実施例2乃至8> 実施例1において、吸着剤にゼオライトZSM−5(モ
ービルオイル社特開昭56−73618の実施例16に
従い合成したもの;(SiO2/Al2O3)モル比=65、ペ
ンタシル型構造、30乃至60メッシュ)0.25g、
ZSM−12(モービルオイル社特開昭56−7361
8の実施例9に従い合成したもの;(SiO2/Al2O3)
モル比=338、30乃至60メッシュ)0.25g、
NU−10(ICI社特開昭57−200218の実施
例7に従い合成したもの;(SiO2/Al2O3)モル比=8
7、ZSM−22型構造、30乃至60メッシュ)0.
25g、EU−7(ICI社、特開昭59−88310
の実施例1に従い合成したもの(SiO2/Al2O3)モル比
=60)0.25g、TPZ−2(帝人油化特許、特開
昭57−149819の実施例1に従い合成したもの;
(SiO2/Al2O3)モル比=100、ZSM−23型構
造、30乃至60メッシュ)0.25gISI−2(新
燃料油開発技術研究組合、特開昭59−73428の実
施例2に従い合成したもの;(SiO2/Al2O3)モル比=
76、ZSM−39型構造、30乃至60メッシュ)
0.25g、LZ−132(UCC社、特開昭58−1
81720の実施例1に従い合成したもの(SiO2/Al2O
3)モル比=27、ZSM−45型構造、30乃至60
メッシュ)0.25gをそれぞれ用いた以外は実施例1
と同様に実験を行なつた。<Example 2-8> Example 1, which was synthesized according to Example 16 of the zeolite ZSM-5 (Mobil Oil Shatoku HirakiAkira 56-73618 adsorbent; (SiO 2 / Al 2 O 3) molar ratio = 65, pentasil structure, 30 to 60 mesh) 0.25 g,
ZSM-12 (Mobile Oil Company, JP-A-56-7361
Synthesized according to Example 9 of 8; (SiO 2 / Al 2 O 3 ).
Molar ratio = 338, 30 to 60 mesh) 0.25 g,
NU-10 (synthesized according to Example 7 of JP-A-57-200218 by ICI; (SiO 2 / Al 2 O 3 ) molar ratio = 8
7, ZSM-22 type structure, 30 to 60 mesh) 0.
25 g, EU-7 (ICI company, JP-A-59-88310
According to Example 1 which were synthesized (SiO 2 / Al 2 O 3 ) molar ratio
= 60) 0.25 g, TPZ-2 (synthesized according to Example 1 of Teijin Yuka Kogyo, JP-A-57-149819;
(SiO 2 / Al 2 O 3 ) molar ratio = 100, ZSM-23 type structure, 30 to 60 mesh) 0.25 g ISI-2 (New Fuel Oil Development Technology Research Association, Example 2 of JP-A-59-73428) Synthesized: (SiO 2 / Al 2 O 3 ) molar ratio =
76, ZSM-39 type structure, 30 to 60 mesh)
0.25 g, LZ-132 (UCC, JP-A-58-1)
81720 synthesized according to Example 1 (SiO 2 / Al 2 O
3 ) Molar ratio = 27, ZSM-45 type structure, 30 to 60
Example 1 except that 0.25 g of each mesh was used.
An experiment was conducted in the same manner as in.
これらの場合における吸着容量は、それぞれ第1表に示
すとおりであつた。The adsorption capacities in these cases were as shown in Table 1, respectively.
<比較例1乃至3> モレキュラーシーブー3A(西尾工業社製、(SiO2/Al
2O3)モル比=1.0、30乃至60メッシュ)の交換
可能な陽イオンの48%を亜鉛イオンで交換したもの;
モレキュラーシーブー4A(ユニオンカーバイド社製、
(SiO2/Al2O3)モル比=1.0 30乃至60メッシ
ュ)の交換可能な陽イオンの82%を銀イオンで交換し
たもの;およびモレキュラーシーブー13X(富デヴィ
ソン社製、(SiO2/Al2O3)モル比=1.4、30乃至
60メッシュ)をそれぞれ0.25g用いた以外は実施例1
と同様に前処理をし、吸着実験を行なつた。<Comparative Examples 1 to 3> Molecular Sieve 3A (manufactured by Nishio Industry Co., Ltd. (SiO 2 / Al
2 O 3 ) Molar ratio = 1.0, 48% of exchangeable cations of 30 to 60 mesh) exchanged with zinc ions;
Molecular Siboo 4A (made by Union Carbide,
82% of the exchangeable cations of (SiO 2 / Al 2 O 3 ) molar ratio = 1.0 30 to 60 mesh were exchanged with silver ions; and Molecular Sieve 13X (manufactured by Devison Co., Ltd., (SiO 2 Example 2 except that 0.25 g of each of 2 / Al 2 O 3 ) molar ratio = 1.4 and 30 to 60 mesh) was used.
Pretreatment was carried out in the same manner as above, and an adsorption experiment was conducted.
これらの場合における吸着容量は、それぞれ第1表に示
すとおりであつた。The adsorption capacities in these cases were as shown in Table 1, respectively.
<比較例4> 比較例1において、吸着試験終了後の亜鉛で交換したモ
レキュラーシーブー3Aを減圧下(0.1mmHg)350℃
にて2時間加熱再生処理した。その後この再生した吸着
剤を−20℃に設定し実施例1と同様に実験を行なつ
た。<Comparative Example 4> In Comparative Example 1, the molecular sieves 3A exchanged with zinc after the completion of the adsorption test was subjected to a reduced pressure (0.1 mmHg) at 350 ° C.
Was heated and regenerated for 2 hours. After that, the regenerated adsorbent was set at -20 ° C and the same experiment as in Example 1 was conducted.
結果は第1表に示すごとく、その吸着容量は最初の1/3
以下に低下した。The results are shown in Table 1, and the adsorption capacity is 1/3 of the first.
Fell below.
さらに再度この吸着剤を同様に減圧処理し、2回再生を
くり返したところその吸着容量は1mg/g・吸着剤以下
となつてしまつた。Further, this adsorbent was again treated under reduced pressure in the same manner, and the regeneration was repeated twice, resulting in an adsorption capacity of 1 mg / g.adsorbent or less.
発明の効果 本発明の方法における特定の吸着剤は実施例に示したご
とく吸着容量が大きく再生が可能であるなどすぐれた吸
着能力を有する。特にSi2H6、Si3H8、Si4H10中のpH3除
去に有効な吸着剤については過去に殆ど報告例がなく、
本発明の方法によつて初めて有効なpH3除去精製法が提
供されるものである。 EFFECTS OF THE INVENTION The specific adsorbent in the method of the present invention has an excellent adsorption capacity such that it has a large adsorption capacity and can be regenerated as shown in the examples. In particular, there have been almost no reports of adsorbents effective in removing pH 3 in Si 2 H 6 , Si 3 H 8 , and Si 4 H 10 in the past,
Only by the method of the present invention is an effective pH 3 removal purification method provided.
第1図は吸着管出口ガス中のpH3濃度とpH3吸着量の関係
を示すグラフである。FIG. 1 is a graph showing the relationship between the pH 3 concentration in the adsorption tube outlet gas and the pH 3 adsorption amount.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭61−101411(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-61-101411 (JP, A)
Claims (2)
iO2およびAl2O3を構成成分に含み、かつSiO
2とAl2O3の含有モル比、(SiO2/Al
2O3)モル比が5以上である、モルデナイト以外の合
成あるいは天然のゼオライト吸着剤で処理することを特
徴とする水素化ケイ素の精製方法。1. A silicon hydride containing phosphine is added to S
SiO 2 and Al 2 O 3 are included in the constituents, and SiO
2 and Al 2 O 3 content molar ratio, (SiO 2 / Al
A method for purifying silicon hydride, which comprises treating with a synthetic or natural zeolite adsorbent other than mordenite, which has a 2 O 3 ) molar ratio of 5 or more.
特許請求の範囲第1項に記載の方法。2. The method according to claim 1, wherein the silicon hydride is silane or disilane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61052666A JPH0645447B2 (en) | 1986-03-12 | 1986-03-12 | Purification method of silicon hydride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61052666A JPH0645447B2 (en) | 1986-03-12 | 1986-03-12 | Purification method of silicon hydride |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62212217A JPS62212217A (en) | 1987-09-18 |
| JPH0645447B2 true JPH0645447B2 (en) | 1994-06-15 |
Family
ID=12921194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61052666A Expired - Lifetime JPH0645447B2 (en) | 1986-03-12 | 1986-03-12 | Purification method of silicon hydride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0645447B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101623228B1 (en) | 2009-03-27 | 2016-05-31 | 수드 케미 촉매주식회사 | Agent for detoxifying discharge gas containing volatile inorganic hydride and method of detoxifying discharge gas containing volatile inorganic hydride |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61101411A (en) * | 1984-10-24 | 1986-05-20 | Showa Denko Kk | Purification of silane gas |
-
1986
- 1986-03-12 JP JP61052666A patent/JPH0645447B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62212217A (en) | 1987-09-18 |
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