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JPH0329003B2 - - Google Patents
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JPH0329003B2 - - Google Patents

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Publication number
JPH0329003B2
JPH0329003B2 JP61031927A JP3192786A JPH0329003B2 JP H0329003 B2 JPH0329003 B2 JP H0329003B2 JP 61031927 A JP61031927 A JP 61031927A JP 3192786 A JP3192786 A JP 3192786A JP H0329003 B2 JPH0329003 B2 JP H0329003B2
Authority
JP
Japan
Prior art keywords
adsorption
adsorbent
zeolite
silicon hydride
sih
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61031927A
Other languages
Japanese (ja)
Other versions
JPS62191413A (en
Inventor
Masayoshi Ito
Hiroji Myagawa
Toshihiro Abe
Kaoru Inoe
Keiichi Ikeda
Masami Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Priority to JP61031927A priority Critical patent/JPS62191413A/en
Publication of JPS62191413A publication Critical patent/JPS62191413A/en
Publication of JPH0329003B2 publication Critical patent/JPH0329003B2/ja
Granted legal-status Critical Current

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  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Silicon Compounds (AREA)

Description

【発明の詳細な説明】 技術分野 本発明は水素化ケイ素中に微量含まれるホスフ
イン(PH3)を除去し水素化ケイ素を精製する方
法に関する。
DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a method for purifying silicon hydride by removing trace amounts of phosphine (PH 3 ) contained in silicon hydride.

背景技術 近年エレクトロニクス工業の発展に伴い、多結
晶シリコンあるいはアモルフアスシリコン等の半
導体用シリコンの需要が急激に増大している。
SiH4、Si2H6等の水素化ケイ素はかかる半導体用
シリコンの製造用原料として最近その重要性を増
しており、今後の需要増加が期待されている。
BACKGROUND ART In recent years, with the development of the electronics industry, the demand for silicon for semiconductors such as polycrystalline silicon or amorphous silicon has increased rapidly.
Silicon hydrides such as SiH 4 and Si 2 H 6 have recently become increasingly important as raw materials for producing silicon for semiconductors, and demand is expected to increase in the future.

これら水素化ケイ素の製造方法としては、以下
に例示するようないくつかの方法が知られている
が、いずれの方法を採用するにせよ通常合成され
た水素化ケイ素ガス中には微量 Mg2Si+4HClaq.→2MgCl2+n/1 SioH2o+2+(1
−1/n)H2 Mg2Si+4NH4Br−33℃ ――――――――――→ in ig.NH32MgBr2 +4NH3+1/nSioH2o+2+(1−1/n)H2 SiCl4+LiAlH4 ―――――――――→ in etharLiCl+AlCl3+SiH4 Si+SiCl4+2H2→SiHCl3+SiH3Cl 2SiHCl3→SiCl4+SiH2Cl2 2SiH2Cl2→SiHCl3+SiH3Cl2 2SiH3Cl→SiH4+SiH4Cl2 のPH3が含まれる。該PH3の含有量は製造法によつ
て異なるが、例えば上記、による方法で製造
した水素化ケイ素中には濃度百ppm前後のPH3
含有される。半導体ガスとして使用される水素化
ケイ素中における不純物としてのPH3の影響は大
きく、通常その含有量を10-9以下(ppb以下)に
する必要がある。
There are several known methods for producing these silicon hydrides, such as those exemplified below, but regardless of which method is used, trace amounts of Mg 2 Si + 4HClaq are usually present in the synthesized silicon hydride gas. .→2MgCl 2 +n/1 Si o H 2o+2 +(1
−1/n) H 2 Mg 2 Si+4NH 4 Br−33℃ ――――――――――→ in ig.NH 3 2MgBr 2 +4NH 3 +1/nSi o H 2o+2 +(1−1/n )H 2 SiCl 4 +LiAlH 4 ――――――――→ in etharLiCl+AlCl 3 +SiH 4 Si+SiCl 4 +2H 2 →SiHCl 3 +SiH 3 Cl 2SiHCl 3 →SiCl 4 +SiH 2 Cl 2 2SiH 2 Cl 2 →SiHCl 3 +SiH 3 Cl 2 2SiH 3 Cl→SiH 4 +SiH 4 Cl 2 PH 3 is included. The content of PH 3 varies depending on the production method, but for example, silicon hydride produced by the method described above contains PH 3 at a concentration of about 100 ppm. The influence of PH 3 as an impurity in silicon hydride used as a semiconductor gas is large, and its content usually needs to be kept at 10 -9 or less (ppb or less).

従来技術 水素化ケイ素たとえばSiH4中における微量の
PH3を除去する方法としては、吸着剤を用いるの
が一般的であり、例えば以下に例示するような方
法が知られている。すなわち、吸着剤として、合
成ゼオライトAまたは合成ゼオライトXを使用す
るもの(特公昭36−1774)、シランを殆ど吸着し
ない均一細孔径を有するゼオライト(例えば合成
ゼオライト3A、4A)中の交換可能な陽イオンを
2価の陽イオン、特には亜鉛、鉛に交換したもの
(特公昭48−41437、48−41439)、合成ゼオライト
4A中のナトリウムイオンを2価の陽イオン、あ
るいは銀イオンに交換したもの(特開昭48−
75475、特開昭59−30711)、活性炭および合成ゼ
オライト−4Aを併用するもの(特開昭58−
69715、58−172220)、水素吸蔵用金属材料または
金属水素化物を使用するもの(特開昭58−
120511)などの方法が報告されている。しかしな
がらこれらの吸着剤は吸着容量が小さいこと、シ
ランの吸着ロスが大きいこと、再生が不可能なこ
となどの種々の問題があつた。
Prior Art Silicon hydride, such as SiH4 , contains trace amounts of
As a method for removing PH 3 , it is common to use an adsorbent, and for example, the following methods are known. That is, those that use synthetic zeolite A or synthetic zeolite Synthetic zeolites, in which ions are exchanged with divalent cations, especially zinc and lead (Special Publications No. 48-41437, 48-41439)
4A in which the sodium ions are exchanged with divalent cations or silver ions (Japanese Patent Laid-Open No. 1973-
75475, JP-A-59-30711), a combination of activated carbon and synthetic zeolite-4A (JP-A-58-30711)
69715, 58-172220), those using metal materials or metal hydrides for hydrogen storage (JP-A-58-
120511) have been reported. However, these adsorbents have various problems such as a small adsorption capacity, a large silane adsorption loss, and an inability to regenerate.

本発明者等は、これらの水素化ケイ素中のホス
フイン(PH3)を除去できる吸着剤の検討を行な
つたところ、5A型ゼオライトがある特定の温度
範囲においてPH3に対してすぐれた吸着能力を示
すことを見出し本発明を完成した。
The present inventors investigated adsorbents that can remove phosphine (PH 3 ) from these silicon hydrides, and found that type 5A zeolite has excellent adsorption ability for PH 3 in a certain temperature range. The present invention was completed based on the discovery that this shows the following.

すなわち、本発明は、ホスフインを含有する水
素化ケイ素を−80℃ないし0℃に保持した5A型
ゼオライト吸着剤で処理することを特徴とする水
素化ケイ素の精製方法である。
That is, the present invention is a method for purifying silicon hydride, which is characterized by treating silicon hydride containing phosphine with a type 5A zeolite adsorbent maintained at -80°C to 0°C.

発明の詳細な開示 本発明において用いられる吸着剤とは、5A型
の合成あるいは天然ゼオライトで、組成式Na12
〔(AlO212(SiO212〕・27H2Oで表わされる4A型
ゼオライトのナトリウムイオンの少なくとも10%
以上、好ましくは20%以上、より好ましくは30%
以上をカルシウムイオンで交換したものである。
これらは公知の方法に準じて容易に製造でき、ま
た30%以上交換したものは、例えば米国Linde社
から「リンデモレキユラーシーブズ」の商品名と
して市販されており、容易に入手でき、このもの
の有効細孔径は約5Åである。
DETAILED DISCLOSURE OF THE INVENTION The adsorbent used in the present invention is a type 5A synthetic or natural zeolite with the composition formula Na 12
At least 10% of the sodium ions in type 4A zeolite expressed as [(AlO 2 ) 12 (SiO 2 ) 12 ]・27H 2 O
or more, preferably 20% or more, more preferably 30%
The above is exchanged with calcium ions.
These can be easily manufactured according to known methods, and those with 30% or more replacement are commercially available, for example, from Linde in the United States under the trade name "Linde Molecular Sheaves", and are easily available. The effective pore size is approximately 5 Å.

吸着処理は、減圧下でも加圧下でも行なうこと
ができるが好ましくは常圧以上である。又水素化
ケイ素は気相でも液相でも良いが通常は気相で行
うのが好ましい。
The adsorption treatment can be carried out under reduced pressure or increased pressure, but is preferably at normal pressure or higher. The silicon hydride may be in either a gas phase or a liquid phase, but it is usually preferable to use the gas phase.

本発明の対象とする水素化ケイ素には、モノシ
ラン、ジシラン、トリシラン等が含まれるが、モ
ノシランが最も好ましい。
The silicon hydride targeted by the present invention includes monosilane, disilane, trisilane, etc., but monosilane is most preferred.

本発明における吸着処理温度は−80℃乃至0℃
の範囲であり、特に好ましくは−80乃至−20℃で
ある。この範囲より低温では水素化ケイ素特に
SiH4の吸着が顕著となり好ましくなく、この範
囲より高温ではPH3の吸着容量が激減するので好
ましくない。
The adsorption treatment temperature in the present invention is -80℃ to 0℃
It is particularly preferably between -80 and -20°C. At temperatures below this range, silicon hydride, especially
Adsorption of SiH 4 becomes noticeable, which is undesirable, and at higher temperatures than this range, the adsorption capacity of PH 3 decreases dramatically, which is undesirable.

水素化ケイ素中のPH3の含有量には特に制限は
ないが、通常1%以下、特には0.1%以下である。
また水素化ケイ素中にはPH3以外のガス(例えば、
水素、窒素、希ガス、メタン、ジシラン等)を含
むものあつても良い。また、5A型ゼオライト以
外の吸着剤と併用することも可能である。
The content of PH 3 in silicon hydride is not particularly limited, but is usually 1% or less, particularly 0.1% or less.
In addition, silicon hydride contains gases other than PH 3 (e.g.
Hydrogen, nitrogen, rare gas, methane, disilane, etc.) may be included. It is also possible to use adsorbents other than 5A type zeolite in combination.

更に後述するように本発明における吸着剤は、
従来公知の吸着剤に比較し吸着容量が大きく、ま
た再生が可能であることが特徴的である。ちなみ
に5A型ゼオライトが以下の条件で再生すること
により再使用できる事実は本発明によつて初めて
明らかにされたものである。吸着剤の再生が可能
であることは、吸着剤の使用量を削減できるばか
りでなく、吸着剤の精製塔への入れ替え作業が不
要となるなど、工業化プロセスにおけるメリツト
はきわめて大きい。5A型ゼオライトの再生は不
活性ガス雰囲気中にて、あるいは減圧下にて100
乃至500℃、好ましくは100乃至300℃の範囲で処
理し実施される。この温度未満ではまだ吸着され
たPH3がかなり残存しており好ましくなく、この
温度範囲を越えるとゼオライトの焼結によりPH3
の有効吸着サイトが消失するため好ましくない。
Furthermore, as described later, the adsorbent in the present invention is
It is characterized in that it has a larger adsorption capacity than conventionally known adsorbents and can be regenerated. Incidentally, the fact that type 5A zeolite can be reused by being regenerated under the following conditions was revealed for the first time by the present invention. Being able to regenerate the adsorbent not only reduces the amount of adsorbent used, but also eliminates the need to replace the adsorbent with a purification column, which has enormous benefits in the industrialization process. Type 5A zeolite is regenerated in an inert gas atmosphere or under reduced pressure.
The treatment is carried out at a temperature in the range of 500°C to 500°C, preferably 100 to 300°C. If the temperature is below this temperature, a considerable amount of adsorbed PH 3 still remains, which is undesirable; if the temperature exceeds this temperature range, PH 3 will be removed due to sintering of the zeolite.
This is not preferable because the effective adsorption sites of

5A型ゼオライトはまた極めて低温でも再生で
きるのが特徴的であり、より低い100乃至200℃の
温度範囲で再生されたものでも、最初の80%以上
の吸着容量を示す。4A型ゼオライトをカルシウ
ムイオン以外の陽イオン例えばマグネシウムイオ
ン、ストロンチウムイオン、亜鉛イオン、鉛イオ
ン、マンガンイオンで交換したものは吸着容量も
小さく、又再生には高温を有し、回復率も悪い。
Type 5A zeolite is also unique in that it can be regenerated at extremely low temperatures, and even when regenerated at a lower temperature range of 100 to 200°C, it still exhibits more than 80% of its original adsorption capacity. Type 4A zeolite exchanged with cations other than calcium ions, such as magnesium ions, strontium ions, zinc ions, lead ions, and manganese ions, has a small adsorption capacity, requires high temperatures for regeneration, and has a poor recovery rate.

以下、本発明を実施例によつて説明する。 Hereinafter, the present invention will be explained with reference to Examples.

実施例 1 内径3mm、長さ42mmの吸着管に、モレキユラー
シーブス−5A(西尾工業社製、交換率75%、30乃
至60メツシユ)0.25gを充填した。400℃にてヘ
リウム中1時間、減圧下(0.2mmHg)2時間処理
した後、吸着管の温度を−20℃に設定し、PH3
279ppm含むSiH4ガスを流量36ml/minの速度
(線速8.5cm/sec、接触時間0.49sec)で流通させ
た。吸着管からの出口ガス中のPH3濃度は、逐次
FPDを検出器とするガスクロマトグラフイーに
より分析した。なお、低濃度のPH3の分析は本発
明者らが提案している濃縮分析法によつた。
Example 1 An adsorption tube with an inner diameter of 3 mm and a length of 42 mm was filled with 0.25 g of Molecular Sieves-5A (manufactured by Nishio Kogyo Co., Ltd., exchange rate 75%, 30 to 60 mesh). After treatment in helium at 400℃ for 1 hour and under reduced pressure (0.2mmHg) for 2 hours, the temperature of the adsorption tube was set to -20℃, and the PH 3 was
SiH 4 gas containing 279 ppm was passed at a flow rate of 36 ml/min (linear velocity 8.5 cm/sec, contact time 0.49 sec). The PH3 concentration in the outlet gas from the adsorption tube is sequentially
It was analyzed by gas chromatography using FPD as a detector. Note that analysis of low concentration PH 3 was performed using the concentration analysis method proposed by the present inventors.

結果を第1図に示す。第1図より、該吸着剤の
吸着容量(吸着管出口のPH3濃度が10ppbとなる
点、以下同じ)は約6mgPH3/g吸着剤であるこ
とがわかつた。
The results are shown in Figure 1. From FIG. 1, it was found that the adsorption capacity of the adsorbent (the point at which the PH 3 concentration at the outlet of the adsorption tube is 10 ppb, the same applies hereinafter) was approximately 6 mg PH 3 /g adsorbent.

実施例 2、3 実施例1において、吸着管の温度を−50℃ある
いは−78℃にした以外は実施例1と同様に行なつ
た。この場合における吸着容量はそれぞれ約19
mg・PH3/g吸着剤、26mg・PH3/g吸着剤であつ
た。
Examples 2 and 3 The same procedure as in Example 1 was carried out except that the temperature of the adsorption tube was set to -50°C or -78°C. The adsorption capacity in this case is approximately 19
mg·PH 3 /g adsorbent, and 26 mg·PH 3 /g adsorbent.

実施例 4 実施例2において、吸着試験終了後のモレキユ
ラーシーブス−5Aを減圧下(0.1mmHg)400℃に
て2時間加熱処理した。その後この再生した吸着
剤を−50℃に設定し実施例1と同様に実験を行な
つた。
Example 4 In Example 2, the molecular sieves-5A after the adsorption test was heat-treated at 400° C. under reduced pressure (0.1 mmHg) for 2 hours. Thereafter, the regenerated adsorbent was set at -50°C and an experiment was conducted in the same manner as in Example 1.

この場合における吸着容量は約18mg・PH3/g
吸着剤で、実施例2とほぼ同等の値であつた。
In this case, the adsorption capacity is approximately 18mg・PH 3 /g
The adsorbent had almost the same value as Example 2.

更に同様の再生操作をくり返し、吸着容量を求
めたところ17mg・PH3/g吸着剤であつた。更に
同様の操作を3回くり返したが、吸着容量に実質
的変化がなく、多数回再生利用できることがわか
つた。
The same regeneration operation was repeated and the adsorption capacity was determined to be 17 mg.PH 3 /g adsorbent. The same operation was repeated three more times, but it was found that there was no substantial change in the adsorption capacity and that the product could be recycled many times.

実施例 5 ケイ化マグネシウム(Mg2Si)を濃度20wt%
の塩酸水溶液と反応させることにより、PH
375ppmを含むSiH4ガスを得た。
Example 5 Magnesium silicide (Mg 2 Si) at a concentration of 20 wt%
By reacting with an aqueous solution of hydrochloric acid, the PH
3. SiH4 gas containing 75 ppm was obtained.

内径8mm、長さ100mmの吸着管に実施例1で用
いたのと同一のモレキユラーシーブス−5A32g
を充填させた。吸着管の温度を−50℃に設定した
後、系内の圧力を5Kg/cm2・absとし上記の合成
したSiH4ガスを流量30Nml/minの速度(線速
0.2cm/sec、接触時間8.4min)で流通させ、精製
後のSiH4を液体チツ素温度で冷却したシリンダ
ー中に捕集した。流通開始593時間後、流通を停
止し、捕集ガス中のPH3量をFPDを検出器とする
ガスクロマトグラフイーにより分析したところPH
は検出されなかつた(検出限界約0.1ppb、この
時点でのPH3の吸着量は3.8mg・PH3/g吸着剤)。
更にこの精製SiH4を用いてエピタキシヤル膜を
作成し、その比抵抗を測定したところ1024Ωcmで
あつた。
The same molecular sieves used in Example 1 for an adsorption tube with an inner diameter of 8 mm and a length of 100 mm - 5A 32 g
was filled with. After setting the temperature of the adsorption tube to -50℃, the pressure in the system was set to 5Kg/ cm2・abs, and the SiH 4 gas synthesized above was pumped at a flow rate of 30Nml/min (linear velocity).
The purified SiH 4 was collected in a cylinder cooled at the temperature of liquid nitrogen. 593 hours after the start of the flow, the flow was stopped and the amount of PH3 in the collected gas was analyzed by gas chromatography using an FPD as a detector.
3 was not detected (detection limit was about 0.1 ppb, the amount of PH 3 adsorbed at this point was 3.8 mg·PH 3 /g adsorbent).
Furthermore, an epitaxial film was prepared using this purified SiH 4 and its specific resistance was measured and found to be 1024 Ωcm.

比較例 1 特公昭48−41437の実施例に従い、モレキユラ
ーシーブ−3A(西尾工業社製、30乃至60メツシ
ユ)50gを、ZnCl210gを溶解させた稀簿塩酸水
溶液2中に2日間浸漬させ、その後過、洗浄
を行ない陽イオンの交換率が44%のモレキユラー
シーブを得た。実施例2においてモレキユラーシ
ーブス5Aのかわりに上記の亜鉛交換したモレキ
ユラーシーブを用いた以外は、実施例2と同様に
実験を行なつた。
Comparative Example 1 According to the example of Japanese Patent Publication No. 48-41437, 50 g of Molecular Sieve 3A (manufactured by Nishio Kogyo Co., Ltd., 30 to 60 mesh) was immersed for 2 days in a dilute hydrochloric acid aqueous solution 2 in which 10 g of ZnCl 2 was dissolved. This was followed by filtration and washing to obtain a molecular sieve with a cation exchange rate of 44%. An experiment was carried out in the same manner as in Example 2, except that the above zinc-exchanged molecular sieve was used instead of the molecular sieve 5A.

この場合における吸着容量は約12mg・PH3/g
吸着剤であつた。
In this case, the adsorption capacity is approximately 12mg・PH 3 /g
It was an adsorbent.

次にこの吸着試験終了後、実施例4におけると
同様に再生処理を行ない、その後−50℃における
吸着実験を行なつた。
Next, after completing this adsorption test, regeneration treatment was carried out in the same manner as in Example 4, and then an adsorption experiment was conducted at -50°C.

この場合における吸着容量は約3mg・PH3/g
吸着剤であり、再生によりその吸着容量が激減す
ることがわかつた。更に同様な操作によりもう一
度再生処理し、吸着実験を行なつたところ、PH3
は殆ど吸着しなかつた。
In this case, the adsorption capacity is approximately 3 mg・PH 3 /g
It was found that the adsorption capacity of the adsorbent was drastically reduced by regeneration. Furthermore, when we regenerated it again using the same procedure and conducted an adsorption experiment, we found that the pH was 3 .
was hardly adsorbed.

以上のごとくこの吸着剤は実質的に再生、再利
用が不可能である。
As described above, this adsorbent is virtually impossible to reproduce or reuse.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は吸着管出口ガス中のPH3濃度とPH3吸着
量の関係を示すグラフである。
FIG. 1 is a graph showing the relationship between the PH 3 concentration in the adsorption tube outlet gas and the amount of PH 3 adsorbed.

Claims (1)

【特許請求の範囲】 1 ホスフインを含有する水素化ケイ素を−80℃
ないし0℃に保持した5A型ゼオライト吸着剤で
処理することを特徴とする水素化ケイ素の精製方
法。 2 吸着処理に使用した5A型ゼオライトを不活
性ガス雰囲気あるいは減圧下において、100乃至
500℃の温度範囲で再生処理し、再使用する特許
請求の範囲第1項に記載の方法。
[Claims] 1. Silicon hydride containing phosphine is heated to -80°C.
A method for purifying silicon hydride, characterized by treating it with a type 5A zeolite adsorbent maintained at a temperature of 0 to 0°C. 2. The 5A type zeolite used for adsorption treatment is heated to
The method according to claim 1, wherein the material is recycled at a temperature range of 500°C and reused.
JP61031927A 1986-02-18 1986-02-18 Purification of silicon hydride Granted JPS62191413A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61031927A JPS62191413A (en) 1986-02-18 1986-02-18 Purification of silicon hydride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61031927A JPS62191413A (en) 1986-02-18 1986-02-18 Purification of silicon hydride

Publications (2)

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JPS62191413A JPS62191413A (en) 1987-08-21
JPH0329003B2 true JPH0329003B2 (en) 1991-04-22

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JP61031927A Granted JPS62191413A (en) 1986-02-18 1986-02-18 Purification of silicon hydride

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JP2006181493A (en) * 2004-12-28 2006-07-13 Japan Pionics Co Ltd Exhaust gas treatment method and treatment apparatus

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