JPH0646525B2 - Manufacturing method of electronic material ceramics - Google Patents
Manufacturing method of electronic material ceramicsInfo
- Publication number
- JPH0646525B2 JPH0646525B2 JP27066385A JP27066385A JPH0646525B2 JP H0646525 B2 JPH0646525 B2 JP H0646525B2 JP 27066385 A JP27066385 A JP 27066385A JP 27066385 A JP27066385 A JP 27066385A JP H0646525 B2 JPH0646525 B2 JP H0646525B2
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- Japan
- Prior art keywords
- substrate
- dielectric
- porcelain
- molded body
- dielectric constant
- Prior art date
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- Ceramic Capacitors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は磁器コンデンサー乃至はこの様なコンデンサー
を内蔵した磁器基板等として利用し得る電子材料セラミ
ックを製造する方法に関する。The present invention relates to a method for producing an electronic material ceramic that can be used as a porcelain capacitor or a porcelain substrate having such a capacitor built therein.
〔従来の技術〕 従来、電子回路用基体は、導体回路のみ、導体回路と抵
抗、もしくは導体回路と抵抗と限られた範囲のコンデン
サーを具備して構成され、その他の機能部分は、素子と
して分離して基体に装着されていた。[Prior Art] Conventionally, an electronic circuit substrate is configured to include only a conductor circuit, a conductor circuit and a resistor, or a conductor circuit and a resistor and a limited range of capacitors, and other functional parts are separated as elements. And then mounted on the substrate.
即ち、例えば、従来の磁器基板においては、導体と抵抗
体の内蔵基板が中心であり、コンデンサーはチップ部品
等としてはんだ付により装着していた。この為、電子回
路の小型化には限界があった。第10図にその1例を示
す。61は磁器基板、62は導体回路、63は抵抗体、
64はチップコンデンサーである。That is, for example, in the conventional porcelain substrate, the substrate having the conductor and the resistor built therein is the center, and the capacitor is mounted by soldering as a chip component or the like. Therefore, there is a limit to downsizing the electronic circuit. One example is shown in FIG. 61 is a porcelain substrate, 62 is a conductor circuit, 63 is a resistor,
64 is a chip capacitor.
例えば、半導体磁器を誘電体化して得られる誘電体磁器
について、近年、同一の磁器基板内で誘電率を変化させ
る事により、基板内に複数個のコンデンサーを内蔵させ
ようとする試みがなされている。つまり第11図に示す
ように、高誘電率ε1の部分71,73と低誘電率ε2
の部分72を分離する事により同一基板上に複数個のコ
ンデンサーを形成させようとする試みである。しかしな
がら、従来、同一基板内に異なった誘電体部分を形成す
る方法が非常に難しく、例えば積層セラミックコンデン
サーを作製する場合の煩雑さを考えれば自明である様
に、複数個のコンデンサーを内蔵する基板は、未だ実現
乃至実用化されていないのが現状である。また、高誘電
率の部分71,73を限られた構造スペースの中で動作
上互いに影響を及ぼし合わない程度に素子機能部分とし
て十分に離された状態にすることも、重要な技術的課題
となっていた。For example, regarding a dielectric ceramic obtained by converting a semiconductor ceramic into a dielectric, an attempt has recently been made to incorporate a plurality of capacitors in the substrate by changing the dielectric constant in the same ceramic substrate. . That is, as shown in FIG. 11, portions 71 and 73 having a high dielectric constant ε 1 and a low dielectric constant ε 2
This is an attempt to form a plurality of capacitors on the same substrate by separating the parts 72 of FIG. However, conventionally, it is very difficult to form different dielectric parts in the same substrate, and it is obvious that, for example, considering the complexity of manufacturing a monolithic ceramic capacitor, a substrate containing a plurality of capacitors Is currently not realized or put into practical use. It is also an important technical problem to keep the high-dielectric-constant portions 71 and 73 sufficiently separated from each other as device functional portions so that they do not affect each other in the limited structure space. Was becoming.
本発明の目的は、従来の問題点を解決し、誘電体を機能
部分として十分に分離された状態で画成し得る電子材料
セラミックの製造法を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to solve the conventional problems and to provide a method for producing an electronic material ceramic capable of defining a dielectric as a functional part in a sufficiently separated state.
上記目的は、誘電体乃至はその前駆体を含む成形体に連
通孔を穿ち、該連通孔内に前記成形体とは誘電率の異な
る物質を充填して誘電率の異なる部分を形成せしめるこ
とを特徴とする本発明の電子材料セラミックの製造法に
よって達成される。The above-mentioned object is to form a communicating hole in a molded body containing a dielectric or a precursor thereof, and to form a portion having a different dielectric constant by filling the communicating hole with a substance having a different dielectric constant from that of the molded body. This is achieved by the method for producing an electronic material ceramic according to the present invention.
本発明において前記成形体とは、例えば圧粉体(原料と
なる例えば金属酸化物類の圧粉状の固体)、焼成体又は
焼結体(磁器類等)などを言い、本発明の電子材料セラ
ミックを構成する誘電体乃至は誘電体を形成するための
前駆体(例えば前述の圧粉状の固体や、高誘電体を合成
するときに一次焼成により得られる半導体磁器や半導体
粒子群から成る固体等)を含むものを言う。In the present invention, the above-mentioned molded article refers to, for example, a green compact (a powdered solid of a raw material such as a metal oxide), a fired body or a sintered body (porcelain, etc.), and the electronic material of the present invention. A dielectric that constitutes ceramics or a precursor for forming a dielectric (for example, the above-mentioned powdered solid or a solid composed of semiconductor porcelain or semiconductor particles obtained by primary firing when synthesizing a high dielectric). Etc.) are included.
本発明方法の特徴は、前記成形体に連通孔を穿し、該連
通孔内に誘電率の異なる物質を充填し、必要に応じて焼
成等の工程を経て誘電率の異なる部分を形成せしめるこ
とにある。従って、成形体に単一もしくは複数の連通孔
を設け、例えば低誘電率の物質を充填することにより、
空所の周囲で高誘電率化されるべき部分を2つ以上に分
離して、互いに離隔した2つ以上の高誘電体部分を画成
せしめることができる。A feature of the method of the present invention is to form a communication hole in the molded body, fill the communication hole with a substance having a different dielectric constant, and form a portion having a different dielectric constant through a process such as firing, if necessary. It is in. Therefore, by providing a single or a plurality of communication holes in the molded body, for example, by filling a low dielectric constant material,
It is possible to separate two or more portions to be made to have a high dielectric constant around the void to define two or more high-dielectric portions separated from each other.
前記連通孔とは、成形体の異なった表層部分に夫々開口
を有する連通孔を意味し、孔の形状は所望により適宜選
択される。例えば、板状成形体の両主面に夫々開口を有
する柱状の孔等を例示することができる。The communicating hole means a communicating hole having openings in different surface layer portions of the molded product, and the shape of the hole is appropriately selected as desired. For example, columnar holes or the like having openings on both main surfaces of the plate-shaped molded body can be exemplified.
1つの例として、粒界絶縁型の高誘電体で構成される磁
器基板は、通常例えばBaTiO3、SrTiO3、M
gTiO3、(Ba,Sr)(Ti,Sn)O3系複合
酸化物(固溶体も含む)、(Ba,Sr)TiO3系複
合酸化物(固溶体も含む)、(Mg,Sr,Ca)Ti
O3系複合酸化物(固溶体も含む)、(Sr,Pb)T
iO3系複合酸化物(固溶体も含む)、(SrCa)T
iO3系複合酸化物(固溶体も含む)、Fe2O3、Z
nOなどの誘電体成分に、半導体化に必要な成分として
La、Dy、Nd、Y、Nb、Ta、Er、Gd、H
o、Ce等の酸化物などを添加して混合した後、圧粉状
の成形体を得、一次焼成して半導体化し、次いで焼成体
表面に金属又は金属酸化物(例えばCu,CuO,Mn
O2,Tl2O3,PbO,P2O5,Bi2O3,N
b2O,ZnO等)を塗布し、二次焼成して粒界絶縁層
を形成せしめることにより得られる。この例において本
発明を実施する場合、まず、前記圧粉状の成形体、一次
焼成後の焼成体、金属又は金属酸化物を表面に塗布した
焼成体、又は二次焼成後の焼成体の所望の部位に所望の
形状の連通孔を設ける。連通孔の数は画成すべき誘電体
の数によって適宜決められる。連通孔を設ける方法とし
ては、次の様な方法が挙げられる。As one example, a porcelain substrate composed of a grain boundary insulating type high dielectric material is usually made of, for example, BaTiO 3 , SrTiO 3 , M.
gTiO 3 , (Ba, Sr) (Ti, Sn) O 3 composite oxide (including solid solution), (Ba, Sr) TiO 3 composite oxide (including solid solution), (Mg, Sr, Ca) Ti
O 3 -based complex oxide (including solid solution), (Sr, Pb) T
iO 3 -based complex oxide (including solid solution), (SrCa) T
iO 3 -based composite oxide (including solid solution), Fe 2 O 3 , Z
In addition to La, Dy, Nd, Y, Nb, Ta, Er, Gd, H as a component necessary for forming a semiconductor in a dielectric component such as nO.
After adding and mixing oxides such as o and Ce, a powder compact is obtained and is primarily fired to be a semiconductor, and then a metal or metal oxide (eg Cu, CuO, Mn) is formed on the surface of the fired body.
O 2 , Tl 2 O 3 , PbO, P 2 O 5 , Bi 2 O 3 , N
b 2 O, ZnO, etc.) and then subjected to secondary firing to form a grain boundary insulating layer. When carrying out the present invention in this example, first, the desired compacted body, a fired body after primary firing, a fired body in which a metal or a metal oxide is applied to the surface, or a fired body after secondary firing is desired. A communication hole having a desired shape is provided in the area. The number of communication holes is appropriately determined according to the number of dielectrics to be defined. The following method may be mentioned as a method of providing the communication hole.
一次焼成前成形体 ○中子を用いた成形、 ○打ち抜き、 ○レーザー加工、 一次焼成後成形体(半導体磁器) ○サンドブラスト、 ○超音波加工、 ○放電加工、 ○研削加工(ダイヤモンドツール等)、 ○エッチング(鉛レジスト、フッ酸処理) 二次焼成後成形体(誘電体磁器) ○サンドブラスト、 ○レーザー加工、 ○超音波加工、 ○研削加工 ○エッチング 次いで、この様にして設けられる連通孔に、例えば低誘
電率の物質を充填し、その後の磁器基板を得るための工
程、あるいは必要に応じて行なわれる三次焼成を経て、
高誘電体部分を複数画成した磁器基板を得る。画成され
る高誘電体部分の誘電率は互いに同じであっても異なっ
ていてもよい。異ならせしむる方法としては、例えば塗
布添加剤の種類を変える方法等が挙げられる。なお、こ
の例の磁器基板を得るために用いられる前記低誘電率物
質としては、融点が磁器本体より低いものがなお更よ
く、例えばPbSiO3、BSiO3、LiSiO3、
各種結晶化ガラス等が好適である。Molded body before primary firing ○ Molding using core, ○ Punching, ○ Laser processing, Molded body after primary firing (semiconductor porcelain) ○ Sandblasting, ○ Ultrasonic machining, ○ Electric discharge machining, ○ Grinding (diamond tool etc.), ○ Etching (Lead resist, hydrofluoric acid treatment) Formed after secondary firing (dielectric porcelain) ○ Sand blasting, ○ Laser processing, ○ Ultrasonic processing, ○ Grinding ○ Etching Then, in the communication holes provided in this way, For example, after filling a material with a low dielectric constant and then performing a step for obtaining a porcelain substrate or a third firing that is performed as necessary,
A porcelain substrate having a plurality of high-dielectric portions defined is obtained. The high permittivity portions defined may have the same or different dielectric constants. Examples of the method of making the different materials include a method of changing the type of coating additive. Incidentally, as the low dielectric constant material used to obtain the porcelain substrate in this example, the melting point is often low is still further than ceramic body, for example PbSiO 3, BSiO 3, LiSiO 3 ,
Various crystallized glasses are suitable.
あるいは、連通孔に充填する物質として、前述した誘電
体成分や半導体化に必要な成分の種類や量を適宜変更し
た粉体を選択して誘電率を異ならしめることもできる。Alternatively, as the substance to be filled in the communication holes, it is possible to select powders in which the types and amounts of the above-mentioned dielectric components and components necessary for semiconductor formation are appropriately changed to make the dielectric constants different.
かくして得られる磁器基板には、各々の高誘電体部分の
表面上に導体部分(電極、引出し部等)を設けることに
より、複数個のコンデンサーを内蔵させることができ
る。また更に、磁器基板の内部乃至は周囲に、導体部
分、抵抗体乃至は絶縁体部分(例えば通常の薄膜乃至は
厚膜形成法により形成される)を形成して、多くの機能
部分を備えた基板とすることができる。A plurality of capacitors can be built in the thus obtained porcelain substrate by providing conductor portions (electrodes, lead portions, etc.) on the surface of each high dielectric portion. Furthermore, a conductor portion, a resistor or an insulator portion (for example, formed by an ordinary thin film or thick film forming method) is formed inside or around the porcelain substrate to provide many functional portions. It can be a substrate.
以下、具体的実施例を示して、本発明を更に詳しく説明
するが、本発明の実施の態様はこれにより限定されな
い。Hereinafter, the present invention will be described in more detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
実施例1 第1図に本発明の実施例である磁器基板の製造工程を示
す。本実施例においては、第2図(a)に示すようにプ
レス成形時に成形体1に連通孔2を形成した。次に通常
の磁器コンデンサーを作製するのと同様な工程でBaT
iO3−Dy2O3−SiO2系の誘電体磁器を形成し
た。すなわち成形体を所定の雰囲気において一次焼成を
行い、次にCuO等添加剤の塗布を行ない、酸化雰囲気
中において二次焼成を行い、誘電体磁器基板を得る。前
記誘電体磁器基板の連通孔に例えばPbSiO3の粉末
3を第2図(b)に示す様に充填した後、三次焼成(9
00℃、60分)を行った。更に磁器基板に所定の導体
部分、抵抗体部分、及び絶縁体部分を形成する事によ
り、C,R内蔵基板が得られた。Embodiment 1 FIG. 1 shows a manufacturing process of a porcelain substrate which is an embodiment of the present invention. In this example, as shown in FIG. 2 (a), the communicating hole 2 was formed in the molded body 1 during press molding. Next, in the same process as when manufacturing a normal porcelain capacitor, BaT
iO 3 -Dy 2 O 3 -SiO 2 based dielectric ceramic was formed. That is, the molded body is subjected to primary firing in a predetermined atmosphere, then an additive such as CuO is applied, and secondarily fired in an oxidizing atmosphere to obtain a dielectric ceramic substrate. After filling the communicating holes of the dielectric ceramic substrate with, for example, PbSiO 3 powder 3 as shown in FIG. 2 (b), the third firing (9
00 ° C., 60 minutes). Further, a C, R built-in substrate was obtained by forming predetermined conductor portions, resistor portions, and insulator portions on the porcelain substrate.
実施例2 第3図に本発明の実施例である磁器基板の他の製造工程
を示す。本実施例においては、成形により所望形状の成
形体21を得(第4図(a))、一次焼成によって半導
体化した磁器基板22においてレーザー照射により連通
孔23を形成した(第4図(b))。次に添加剤の塗布
を行い、二次焼成して誘電体磁器基板を得た。前記磁器
基板の連通孔に例えばPbSiO3の粉末24を第4図
(c)に示す様に充填した。次に三次焼成を行う。更
に、この基板に所定の導体部分、抵抗体部分、及び絶縁
体部分を形成する事により、C,R内蔵基板が得られ
た。Embodiment 2 FIG. 3 shows another manufacturing process of a porcelain substrate which is an embodiment of the present invention. In this example, a molded body 21 having a desired shape was obtained by molding (Fig. 4 (a)), and a communication hole 23 was formed by laser irradiation in a porcelain substrate 22 which was made into a semiconductor by primary firing (Fig. 4 (b)). )). Next, an additive was applied and secondary firing was performed to obtain a dielectric ceramic substrate. The communicating holes of the porcelain substrate were filled with, for example, PbSiO 3 powder 24 as shown in FIG. 4 (c). Next, tertiary firing is performed. Further, a C, R built-in substrate was obtained by forming predetermined conductor portions, resistor portions, and insulator portions on this substrate.
実施例3 第5図に本発明の実施例である磁器基板の他の製造工程
を示す。本実施例においては、成形により所望形状の成
形体31を得(第6図(a))、一次焼成により半導体
化した磁器基板に添加剤を塗布後、二次焼成を行い誘電
体磁器基板32を得た。この磁器基板にダイヤモンド工
具を使用した機械加工により連通孔33を形成し(第6
図(b))、その連通孔に例えばPbSiO3の粉末3
4を第6図(c)に示す様に充填した。次に三次焼成を
行った。前記基板に所定の導体部分、抵抗体部分、及び
絶縁体部分を形成する事により、C,R内蔵基板が得ら
れる。Embodiment 3 FIG. 5 shows another manufacturing process of a porcelain substrate which is an embodiment of the present invention. In this example, a molded body 31 having a desired shape is obtained by molding (FIG. 6A), an additive is applied to the porcelain substrate semiconductorized by primary firing, and then secondary firing is performed to perform the dielectric porcelain substrate 32. Got A communication hole 33 is formed in this porcelain substrate by machining using a diamond tool (6th
(B)), for example, PbSiO 3 powder 3 in its communication hole
4 was filled as shown in FIG. 6 (c). Next, third firing was performed. By forming a predetermined conductor portion, resistor portion, and insulator portion on the substrate, a C / R built-in substrate can be obtained.
実施例4 第7図に本発明の実施例である磁器基板の他の製造工程
を示す。本実施例においては、成形により連通孔42,
42を有する成形体41を得た(第8図(a))。連通
孔42,42は、例えば金属製の中子を金型内に配して
原料を充填することにより形成される。成形体の充填部
には実施例1と同じ原料を充填し、前記連通孔にはBa
TiO3−MgTiO3−Dy2O3−SiO2系(B
aTiO3とMgTiO3の組成比(重量)を70:3
0としたmg)を充填した後、一次焼成(1400℃、
4時間、N2:H2=95:5のガス雰囲気中)により
半導体化し添加剤(MnO2 250mg)塗布後二次
焼成(1300℃、2時間)を行ない誘電体磁器基板
(第8図(b))を得た。前記基板に所定の導体部分、
抵抗体部分、及び絶縁体部分を形成する事により、C,
R内蔵基板が得られる。Embodiment 4 FIG. 7 shows another manufacturing process of a porcelain substrate which is an embodiment of the present invention. In this embodiment, the communication holes 42,
A molded body 41 having 42 was obtained (FIG. 8 (a)). The communication holes 42, 42 are formed, for example, by placing a metal core in a mold and filling the raw material. The same material as in Example 1 was filled in the filling portion of the molded body, and Ba was filled in the communication hole.
TiO 3 —MgTiO 3 —Dy 2 O 3 —SiO 2 system (B
The composition ratio of ATiO 3 and MgTiO 3 (weight) 70: 3
0 mg), and then primary firing (1400 ° C.,
4 hours, N 2: H 2 = 95 : 5 in the gas atmosphere) by a semiconductor of the addition agent (MnO 2 250 mg) coated after secondary firing (1300 ° C., the dielectric ceramic substrate subjected to 2 hours) (Figure 8 ( b)) was obtained. A predetermined conductor portion on the substrate,
By forming the resistor part and the insulator part, C,
An R built-in substrate can be obtained.
なお、第9図に前記実施例に示した様な工程により得ら
れる本発明の磁器基板の例を示す。第9図(a)及び
(b)は、それぞれ磁器基板の平面図及び断面図であ
り、51が高誘電体部分、52が低誘電体部分である。
また第9図(c)は、更に導体部分53、抵抗体部分5
4、及び絶縁体部分55を形成した磁器基板を示してい
る。 Incidentally, FIG. 9 shows an example of the porcelain substrate of the present invention obtained by the steps as shown in the above embodiment. 9 (a) and 9 (b) are a plan view and a sectional view, respectively, of the porcelain substrate, in which 51 is a high dielectric portion and 52 is a low dielectric portion.
Further, FIG. 9 (c) shows a conductor portion 53 and a resistor portion 5 as well.
4 and a porcelain substrate on which an insulator part 55 is formed.
本発明の電子材料セラミックの製造法は、各種誘電率の
異なる誘電体を複数画成し得る電子材料セラミックを製
造することができる。従って、この電子材料セラミック
を用いて構成される本発明の電子回路用基体は、各種容
量のコンデンサーを複数内蔵することができ、またこの
基板に導体、抵抗体、絶縁体等の各種機能部分を形成す
ることにより、多くの機能部分を備え、しかも小型化さ
れ安価な電子回路用基体となる。また、この様に基体内
でのコンデンサー、抵抗等の設計の自由度を大幅に向上
させることができる。According to the method for producing an electronic material ceramic of the present invention, it is possible to produce an electronic material ceramic capable of defining a plurality of dielectric materials having different dielectric constants. Therefore, the electronic circuit substrate of the present invention configured by using this electronic material ceramic can contain a plurality of capacitors of various capacities, and various functional parts such as conductors, resistors and insulators can be incorporated in the substrate. By forming it, it becomes a substrate for electronic circuits, which has many functional parts and is small in size and inexpensive. Further, in this way, the degree of freedom in designing capacitors, resistors, etc. in the substrate can be greatly improved.
第1図は、本発明の1実施例である磁器基板の製造工程
を説明するための工程説明図であり、第2図の(a)は
このときの連通孔を形成したプレス成形体の断面図、
(b)は連通孔に誘電率の異なる物質を充填した磁器基
板の断面図を示している。第3図は、本発明の1実施例
である磁器基板の他の製造工程を説明するための工程説
明図であり、第4図の(a)はこのときの成形体、
(b)は連通孔を形成した半導体磁器基板、(c)は連
通孔に誘電率の異なる物質を充填した磁器基板のそれぞ
れの断面図を示している。 第5図は、本発明の1実施例である磁器基板の更に他の
製造工程を説明するための工程説明図であり、第6図の
(a)はこのときの成形体、 (b)は連通孔を形成した誘電体磁器基板、 (c)は連通孔に誘電率の異なる物質を充填した誘電体
磁器基板のそれぞれの断面図を示している。 第7図は、本発明の1実施例である磁器基板の更にもう
1つの他の製造工程を説明するための工程説明図であ
り、第8図の(a)はこのときの成形体、(b)は誘電
体磁器のそれぞれの断面図を示している。 第9図の(a)は、本発明の1実施例である磁器基板の
平面図、(b)は(a)中A−A断面図であり、(c)
は更にこの磁器基板に導体、抵抗体、絶縁体等の機能部
分を形成したR,C内蔵の磁器基板の断面図である。 第10図は、従来の磁器基板の断面図である。 第11図は、従来試みられている方法による複数の高誘
電体部分を有する磁器基板の断面図である。 1,21,31……成形体, 2,23,32,41……誘電体磁器, 3,24,33,42……低誘電率物質, 22……半導体磁器, 43……導体, 44……抵抗体, 45……絶縁体。FIG. 1 is a process explanatory view for explaining a manufacturing process of a porcelain substrate which is an embodiment of the present invention, and FIG. 2 (a) is a cross section of a press-formed body in which a communication hole is formed at this time. Figure,
(B) shows a cross-sectional view of a porcelain substrate having communication holes filled with substances having different dielectric constants. FIG. 3 is a process explanatory view for explaining another manufacturing process of the porcelain substrate which is one embodiment of the present invention, and FIG. 4 (a) is a molded body at this time,
(B) is a sectional view of a semiconductor porcelain substrate having communication holes formed therein, and (c) is a porcelain substrate having communication holes filled with substances having different dielectric constants. FIG. 5 is a process explanatory view for explaining still another manufacturing process of the porcelain substrate which is one embodiment of the present invention. FIG. 6A is a molded product at this time, and FIG. A dielectric ceramic substrate having communication holes formed therein, and (c) is a cross-sectional view of each of the dielectric ceramic substrates having communication holes filled with substances having different dielectric constants. FIG. 7 is a process explanatory view for explaining still another manufacturing process of the porcelain substrate which is one embodiment of the present invention, and FIG. 8 (a) is a molded body at this time, b) shows respective sectional views of the dielectric ceramics. 9A is a plan view of a porcelain substrate which is one embodiment of the present invention, FIG. 9B is a sectional view taken along line AA in FIG. 9A, and FIG.
FIG. 4 is a cross-sectional view of a porcelain substrate with built-in R and C in which functional parts such as conductors, resistors, and insulators are further formed on this porcelain substrate. FIG. 10 is a sectional view of a conventional porcelain substrate. FIG. 11 is a cross-sectional view of a porcelain substrate having a plurality of high-dielectric-constant portions according to a conventionally attempted method. 1, 21, 31 ... molded body, 2, 23, 32, 41 ... dielectric porcelain, 3, 24, 33, 42 ... low dielectric constant material, 22 ... semiconductor porcelain, 43 ... conductor, 44 ... … Resistors, 45… Insulators.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H05K 1/03 B 7011−4E ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location H05K 1/03 B 7011-4E
Claims (2)
通孔を穿ち、該連通孔内に前記成形体とは誘電率の異な
る物質を充填して誘電率の異なる部分を形成せしめるこ
とを特徴とする電子材料セラミックの製造法。1. A communicating hole is formed in a molded body containing a dielectric or a precursor thereof, and a substance having a different dielectric constant from that of the molded body is filled in the communicating hole to form a portion having a different dielectric constant. A method for producing an electronic material ceramic, characterized by:
電率化することにより、前記連通孔周囲の高誘電体部分
を互いに分離させる特許請求の範囲第(1)項記載の電
子材料セラミックの製造法。2. The high dielectric portion around the communication hole is separated from each other by filling the communication hole with a substance having a low dielectric constant to reduce the dielectric constant. Electronic material manufacturing method of ceramics.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27066385A JPH0646525B2 (en) | 1985-12-03 | 1985-12-03 | Manufacturing method of electronic material ceramics |
| US06/892,320 US4759965A (en) | 1985-08-06 | 1986-08-04 | Ceramic, preparation thereof and electronic circuit substrate by use thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27066385A JPH0646525B2 (en) | 1985-12-03 | 1985-12-03 | Manufacturing method of electronic material ceramics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62131408A JPS62131408A (en) | 1987-06-13 |
| JPH0646525B2 true JPH0646525B2 (en) | 1994-06-15 |
Family
ID=17489218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27066385A Expired - Lifetime JPH0646525B2 (en) | 1985-08-06 | 1985-12-03 | Manufacturing method of electronic material ceramics |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0646525B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008142748A1 (en) * | 2007-05-16 | 2008-11-27 | Fujitsu Limited | Magnetic head for magnetic disk apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6021444B2 (en) | 2012-05-31 | 2016-11-09 | 株式会社東芝 | Charged beam drawing apparatus and drawing data creation apparatus |
-
1985
- 1985-12-03 JP JP27066385A patent/JPH0646525B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6021444B2 (en) | 2012-05-31 | 2016-11-09 | 株式会社東芝 | Charged beam drawing apparatus and drawing data creation apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62131408A (en) | 1987-06-13 |
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