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JPH0738489B2 - Electronic material ceramic and substrate for electronic circuit using the same - Google Patents
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JPH0738489B2 - Electronic material ceramic and substrate for electronic circuit using the same - Google Patents

Electronic material ceramic and substrate for electronic circuit using the same

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Publication number
JPH0738489B2
JPH0738489B2 JP60171862A JP17186285A JPH0738489B2 JP H0738489 B2 JPH0738489 B2 JP H0738489B2 JP 60171862 A JP60171862 A JP 60171862A JP 17186285 A JP17186285 A JP 17186285A JP H0738489 B2 JPH0738489 B2 JP H0738489B2
Authority
JP
Japan
Prior art keywords
substrate
molded body
electronic
dielectric
electronic circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP60171862A
Other languages
Japanese (ja)
Other versions
JPS6232681A (en
Inventor
圭一 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP60171862A priority Critical patent/JPH0738489B2/en
Priority to US06/892,320 priority patent/US4759965A/en
Publication of JPS6232681A publication Critical patent/JPS6232681A/en
Publication of JPH0738489B2 publication Critical patent/JPH0738489B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Structure Of Printed Boards (AREA)
  • Insulating Bodies (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は磁気コンデンサー乃至はこの様なコンデンサー
を内蔵した磁気基板等として利用し得る電子材料セラミ
ック、及びこれを用いて構成さる電子回路用基体に関す
る。
DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to an electronic material ceramic that can be used as a magnetic capacitor or a magnetic substrate incorporating such a capacitor, and a substrate for an electronic circuit configured using the same. Regarding

〔従来の技術〕[Conventional technology]

従来、電子回路用基体は、導体回路のみ、導体回路と抵
抗、もしくは導体回路と抵抗と限られた範囲のコンデン
サーを具備して構成され、その他の機能部分は、素子と
して分離して基体に装着されていた。
Conventionally, an electronic circuit substrate is configured to include only a conductor circuit, a conductor circuit and a resistor, or a conductor circuit and a resistor and a limited range of capacitors, and other functional parts are separated as elements and mounted on the substrate. It had been.

即ち、例えば、従来の磁器基板においては、導体と抵抗
体の内蔵基板が中心であり、コンデンサーはチップ部品
等としてはんだ付により装着していた。この為、電子回
路の小型化には限界があった。第8図にその1例を示
す。51は磁器基板、52は導体回路、53は抵抗体、54はチ
ップコンデンサーである。
That is, for example, in the conventional porcelain substrate, the substrate having the conductor and the resistor built therein is the center, and the capacitor is mounted by soldering as a chip component or the like. Therefore, there is a limit to downsizing the electronic circuit. One example is shown in FIG. 51 is a porcelain substrate, 52 is a conductor circuit, 53 is a resistor, and 54 is a chip capacitor.

近年、同一の磁器基板内で誘電率を変化させる事によ
り、基板内に複数個のコンデンサーを内蔵させようとす
る試みがなされている。つまり第9図に示すように、高
誘電率εの部分61と低誘電率εの部分62を分離する
事により同一基板上に複数個のコンデンサーを形成させ
ようとする試みである。しかしながら、従来、同一基板
内に異なった誘電体部分を形成する方法が非常に難し
く、例えば積層セラミックコンデンサーを作製する場合
の煩雑さを考えれば自明である様に、複数個のコンデン
サーを内蔵する基板は、未だ実現乃至実用化されていな
いのが現状である。
In recent years, attempts have been made to incorporate a plurality of capacitors in a substrate by changing the dielectric constant within the same porcelain substrate. That is, as shown in FIG. 9, it is an attempt to form a plurality of capacitors on the same substrate by separating a portion 61 having a high dielectric constant ε 1 and a portion 62 having a low dielectric constant ε 2 . However, conventionally, it is very difficult to form different dielectric parts in the same substrate, and it is obvious that, for example, considering the complexity of manufacturing a monolithic ceramic capacitor, a substrate containing a plurality of capacitors Is currently not realized or put into practical use.

〔発明の解決すべき問題点〕[Problems to be Solved by the Invention]

本発明は、従来の問題点を解決し、複数の高誘電体部分
を画成し得る電子材料セラミックを提供すべくなされた
ものである。
The present invention has been made to solve the conventional problems and provide an electronic material ceramic capable of defining a plurality of high dielectric portions.

本発明は、また、この様な電子材料セラミックを用いる
ことにより、複数個のコンデンサーを内蔵し得る電子回
路用基体を提供すべくなされたものである。
The present invention is also made to provide a substrate for an electronic circuit capable of incorporating a plurality of capacitors by using such an electronic material ceramic.

本発明は、更に、誘電体をはじめとする多くの機能部分
を備えしかも小型化され安価な電子回路用基体を提供す
べくなされたものである。
The present invention has been further made to provide an inexpensive electronic circuit substrate which has many functional parts including a dielectric and is miniaturized.

〔問題点を解決するための手段〕[Means for solving problems]

即ち、本発明によって提供される電子材料セラミック
は、誘電体乃至はその前駆体を含む成形体であり、該成
形体は、該成形体材料の一次焼成体の表面に金属又は金
属酸化物を塗布し、二次焼成して粒界絶縁層を形成せし
めた成形体であり、前記成形体に設けられた凹部に誘電
率の異なる物質が充填されて形成される誘電率の異なる
部分を有していることを特徴とするものであり、また、
本発明によって提供される電子回路用基体は、上記電子
材料セラミックにより構成されていることを特徴とする
ものである。
That is, the electronic material ceramic provided by the present invention is a molded body containing a dielectric or a precursor thereof, and the molded body is formed by applying a metal or a metal oxide to the surface of the primary fired body of the molded body material. Then, the molded body is formed by secondary firing to form a grain boundary insulating layer, and has a portion with a different dielectric constant formed by filling a recess provided in the molded body with a substance having a different dielectric constant. It is characterized by
The electronic circuit substrate provided by the present invention is characterized by being made of the above-mentioned electronic material ceramic.

〔発明の具体的説明及び実施例〕[Specific Description and Examples of Invention]

本発明において前記成形体とは、例えば圧粉体(原料と
なる例えば金属酸化物類の圧粉状の固体)、焼成体又は
焼結体(磁器類等)などを言い、本発明の電子材料セラ
ミックを構成する誘電体乃至は誘電体を形成するための
前駆体(例えば前述の圧粉状の固体や、高誘電体を合成
するときに一次焼成により得られる半導体磁器や半導体
粒子群から成る固体等)を含むものを言う。
In the present invention, the above-mentioned molded article refers to, for example, a green compact (a powdered solid of a raw material such as a metal oxide), a fired body or a sintered body (porcelain, etc.), and the electronic material of the present invention. A dielectric that constitutes ceramics or a precursor for forming a dielectric (for example, the above-mentioned powdered solid or a solid composed of semiconductor porcelain or semiconductor particles obtained by primary firing when synthesizing a high dielectric). Etc.) are included.

本発明の電子材料セラミックの特徴は、前記成形体に設
けられた凹部に誘電率の異なる物質を充填し、必要に応
じて焼成等の工程を経て誘電率の異なる部分を形成せし
めたことにある。従って、成形体に単一もしくは複数の
凹部を設け、例えば低誘電率の物質を充填することによ
り、凹部の周囲で高誘電率化されるべき部分を2つ以上
に分離して、互いに離隔した2つ以上の高誘電体部分を
画成せしめることができる。
A feature of the electronic material ceramic of the present invention is that the recesses provided in the molded body are filled with substances having different permittivities, and portions having different permittivities are formed through a process such as firing as necessary. . Therefore, a single or a plurality of recesses are provided in the molded body, and by filling with a substance having a low dielectric constant, for example, the portions to be made to have a high dielectric constant are separated into two or more around the recesses and separated from each other. Two or more high-dielectric parts can be defined.

1つの例として、粒界絶縁型の高誘電体で構成される磁
器基板は、通常例えばBaTiO3にDy2O3、SiO2等の成分を
添加し混合した圧粉状の成形体を、一次焼成して半導体
化し、次いで焼成体表面に金属又は金属酸化物(例えば
Cu,CuO,MnO2,Tl2O3等)を塗布し、二次焼成して粒界絶
縁層を形成せしめることにより得られる。この例におい
て本発明を実施する場合、まず前記圧粉状の成形体、一
次焼成後の焼成体、金属又は金属酸化物を表面に塗布し
た焼成体、又は二次焼成後の焼成体の所望の部位に所望
の形状の凹部(例えば表層部分に穿たれた凹所等)を設
ける。凹部の数は画成すべき誘電体の数によって適宜決
められる。凹部を設ける方法としては、例えば圧粉体の
プレス成形、レーザー加工、機械加工(例えばダイヤモ
ンド切削)、超音波加工等による方法が挙げられる。
As one example, a porcelain substrate composed of a grain boundary insulation type high-dielectric material is usually a powder compact formed by adding components such as Dy 2 O 3 and SiO 2 to BaTiO 3 and mixing them. After firing, it becomes a semiconductor, and then a metal or metal oxide (for example,
Cu, CuO, MnO 2 , Tl 2 O 3, etc.) is applied and secondary firing is performed to form a grain boundary insulating layer. When carrying out the present invention in this example, first of all, the desired powder-compacted shaped body, a fired body after primary firing, a fired body having a surface coated with a metal or a metal oxide, or a fired body after secondary firing is used. A recess having a desired shape (for example, a recess formed in the surface layer portion) is provided in the portion. The number of recesses is appropriately determined depending on the number of dielectrics to be defined. Examples of the method of providing the recess include a method of press molding of a green compact, laser processing, mechanical processing (for example, diamond cutting), ultrasonic processing, and the like.

次いで、この様にして設けられる凹部に、例えば低誘電
率の物質を充填し、その後の磁器基板を得るための工
程、あるいは必要に応じて行なわれる三次焼成を経て、
高誘電体部分を複数画成した磁器基板を得る。画成され
る高誘電体部分の誘電率は互いに同じであっても異なっ
ていてもよい。異ならせしむる方法としては、例えば塗
布添加剤の種類を変える方法等が挙げられる。なお、こ
の例の磁器基板を得るために用いられる前記低誘電率物
質としては、融点が磁器本体より低いものがなお更よ
く、例えばPbSiO3、BSiO3、LiSiO3、各種結晶化ガラス
等が好適である。
Then, the recesses thus provided are filled with, for example, a substance having a low dielectric constant, and a subsequent step for obtaining a porcelain substrate, or a third firing that is performed as necessary,
A porcelain substrate having a plurality of high-dielectric portions defined is obtained. The high permittivity portions defined may have the same or different dielectric constants. Examples of the method of making the different materials include a method of changing the type of coating additive. Incidentally, as the low dielectric constant material used to obtain the porcelain substrate in this example, the melting point is often low is still further than ceramic body, for example PbSiO 3, BSiO 3, LiSiO 3 , various crystallized glass is preferred Is.

かくして得られる磁器基板には、各々の高誘電体部分の
表面上に導体部分(電極、引出し部等)を設けることに
より、複数個のコンデンサーを内蔵させることができ
る。また更に、磁器基板の内部乃至は周囲に、導体部分
(例えばスルホール状の導体)、抵抗体乃至は絶縁体部
分(例えば通常の薄膜乃至は厚膜形成法により形成され
る)を形成して、多くの機能部分を備えた基板とするこ
とができる。
A plurality of capacitors can be built in the thus obtained porcelain substrate by providing conductor portions (electrodes, lead portions, etc.) on the surface of each high dielectric portion. Furthermore, a conductor portion (for example, a through-hole conductor) and a resistor or an insulator portion (for example, formed by a normal thin film or thick film forming method) are formed inside or around the porcelain substrate, It can be a substrate with many functional parts.

以下、具体的実施例を示して、本発明を更に詳しく説明
するが、本発明の実施の態様はこれにより限定されな
い。
Hereinafter, the present invention will be described in more detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.

実施例1 第1図に本発明の実施例である磁器基板の製造工程を示
す。本実施例においては、第2図(a)に示すようにプ
レス成形時に成形体1に凹部2を形成する。次に通常の
磁器コンデンサーを作製するのと同様な工程でBaTiO3
Dy2O3−SiO2系の誘電体磁器を形成する。すなわち成形
体を所定の雰囲気において一次焼成を行い、次にCuO等
添加剤の塗布を行ない、酸化雰囲気中において二次焼成
を行い、誘電体磁器基板を得る。前記誘電体磁器基板の
凹部に例えばPbSiO3の粉末3を第2図(b)に示す様に
充填した後、三次焼成を行う。更に磁器基板に所定の導
体部分、抵抗体部分、及び絶縁体部分を形成する事によ
り、C,R内蔵基板が得られる。
Embodiment 1 FIG. 1 shows a manufacturing process of a porcelain substrate which is an embodiment of the present invention. In this embodiment, as shown in FIG. 2 (a), the recess 2 is formed in the molded body 1 during press molding. Next, in the same process as when manufacturing a normal porcelain capacitor, BaTiO 3
Form a Dy 2 O 3 —SiO 2 system dielectric ceramic. That is, the molded body is subjected to primary firing in a predetermined atmosphere, then an additive such as CuO is applied, and secondarily fired in an oxidizing atmosphere to obtain a dielectric ceramic substrate. After filling the concave portion of the dielectric ceramic substrate with, for example, PbSiO 3 powder 3 as shown in FIG. 2 (b), third firing is performed. Further, a C, R built-in substrate is obtained by forming a predetermined conductor portion, resistor portion, and insulator portion on the porcelain substrate.

実施例2 第3図に本発明の実施例である磁器基板の他の製造工程
を示す。本実施例においては、成形により所望形状の成
形体21を得(第4図(a))、一次焼成によって半導体
化した磁器基板22においてレーザー照射により凹部23を
形成する(第4図(b))。次に添加剤の塗布を行い、
二次焼成して誘電体磁器基板を得る。前記磁器基板の凹
部に例えばPbSiO3の粉末24を第4図(c)に示す様に充
填する。次に三次焼成を行う。更に、この基板に所定の
導体部分、抵抗体部分、及び絶縁体部分を形成する事に
より、C,R内蔵基板が得られる。
Embodiment 2 FIG. 3 shows another manufacturing process of a porcelain substrate which is an embodiment of the present invention. In this embodiment, a molded body 21 having a desired shape is obtained by molding (FIG. 4 (a)), and a concave portion 23 is formed by laser irradiation on a porcelain substrate 22 semiconductorized by primary firing (FIG. 4 (b)). ). Next, apply the additive,
Secondary firing is performed to obtain a dielectric ceramic substrate. The concave portion of the porcelain substrate is filled with, for example, PbSiO 3 powder 24 as shown in FIG. 4 (c). Next, tertiary firing is performed. Further, by forming a predetermined conductor portion, resistor portion, and insulator portion on this substrate, a C / R built-in substrate can be obtained.

実施例3 第5図に本発明の実施例である磁器基板の他の製造工程
を示す。本実施例においては、成形により所望形状の成
形体31を得(第6図(a))、一次焼成により半導体化
した磁器基板に添加剤を塗布後、二次焼成を行い誘電体
磁器基板32を得る。この磁器基板にダイヤモンド工具を
使用した機械加工により凹部33を形成し(第6図
(b))、その凹部に例えばPbSiO3の粉末34を第6図
(c)に示す様に充填する。次に三次焼成を行う。前記
基板に所定の導体部分、抵抗体部分、及び絶縁体部分を
形成する事により、C,R内蔵基板が得られる。
Embodiment 3 FIG. 5 shows another manufacturing process of a porcelain substrate which is an embodiment of the present invention. In this embodiment, a molded body 31 having a desired shape is obtained by molding (FIG. 6 (a)), the additive is applied to the porcelain substrate which has been made into a semiconductor by the primary firing, and then the secondary firing is performed to perform the dielectric porcelain substrate 32. To get A concave portion 33 is formed on this porcelain substrate by machining using a diamond tool (FIG. 6 (b)), and the concave portion is filled with, for example, PbSiO 3 powder 34 as shown in FIG. 6 (c). Next, tertiary firing is performed. By forming a predetermined conductor portion, resistor portion, and insulator portion on the substrate, a C / R built-in substrate can be obtained.

なお、第7図に前記実施例に示した様な工程により得ら
れる本発明の磁器基板の例を示す。第7図(a)及び
(b)は、それぞれ磁器基板の平面図及び断面図であ
り、41が高誘電体部分、42が低誘電体部分である。また
第7図(c)は、更に導体部分43、抵抗体部分44、及び
絶縁体部分45を形成した磁器基板を示している。
Incidentally, FIG. 7 shows an example of the porcelain substrate of the present invention obtained by the steps as shown in the above embodiment. FIGS. 7 (a) and 7 (b) are a plan view and a sectional view of the porcelain substrate, respectively, where 41 is a high dielectric portion and 42 is a low dielectric portion. Further, FIG. 7C shows a porcelain substrate on which a conductor portion 43, a resistor portion 44, and an insulator portion 45 are further formed.

〔発明の効果〕 本発明の電子材料セラミックは、各種誘電率の異なる誘
電体を複数画成し得る。従って、これを用いて構成され
る本発明の電子回路用基体は、各種容量のコンデンサー
を複数内蔵することができ、またこの基板に導体、抵抗
体、絶縁体等の各種機能部分を形成することにより、多
くの機能部分を備え、しかも小型化され安価な電子回路
用基体となる。また、この様に基体内でのコンデンサ
ー、抵抗等の設計の自由度を大幅に向上させることがで
きる。
[Effect of the Invention] The electronic material ceramic of the present invention can define a plurality of dielectrics having different dielectric constants. Therefore, the electronic circuit substrate of the present invention constructed by using this can incorporate a plurality of capacitors having various capacities, and various functional parts such as conductors, resistors, and insulators can be formed on this substrate. As a result, an inexpensive electronic circuit substrate having a large number of functional parts and having a small size can be obtained. Further, in this way, the degree of freedom in designing capacitors, resistors, etc. in the substrate can be greatly improved.

なお、本発明においては、成形体に設けられた凹部に誘
電率の異なる物質を充填するが、例えば充填材なし、す
なわち空気相のみでも低誘電率化を達成する事が可能で
あるが、基板の一部が極端に薄くなる事により、基板自
体の強度が問題となる。従って、凹部に充填材を充填す
る事により強度の向上という効果をも達成し得るもので
ある。
In the present invention, the recesses provided in the molded body are filled with substances having different dielectric constants. For example, it is possible to achieve a low dielectric constant without a filler, that is, only in the air phase. The strength of the substrate itself becomes a problem because a part of the substrate becomes extremely thin. Therefore, the effect of improving the strength can be achieved by filling the concave portion with the filler.

また、本発明では、成形体に凹部を形成するため、底部
又は中心部は一体となっている。このため、従来の貫通
穴を開ける構造に比較して基板の強度が保たれるという
効果もある。
Further, in the present invention, since the concave portion is formed in the molded body, the bottom portion or the central portion is integrated. Therefore, there is an effect that the strength of the substrate is maintained as compared with the conventional structure in which the through hole is formed.

【図面の簡単な説明】[Brief description of drawings]

第1図は、本発明の1実施例である磁器基板の製造工程
を説明するための工程説明図であり、第2図の(a)は
このときの凹部を形成したプレス成形体の断面図、
(b)は凹部に誘電率の異なる物質を充填した磁器基板
の断面図を示している。 第3図は、本発明の1実施例である磁器基板の他の製造
工程を説明するための工程説明図であり、第4図の
(a)はこのときの成形体、(b)は凹部を形成した半
導体磁器基板、(c)は凹部に誘電率の異なる物質を充
填した磁器基板のそれぞれの断面図を示している。 第5図は、本発明の1実施例である磁器基板の更に他の
製造工程を説明するための工程説明図であり、第6図の
(a)はこのときの成形体、(b)は凹部を形成した誘
電体磁器基板、(c)は凹部に誘電率の異なる物質を充
填した誘電体磁器基板のそれぞれの断面図を示してい
る。 第7図の(a)は、本発明の1実施例である磁器基板の
平面図、(b)は(a)中A−A断面図であり、(c)
は更にこの磁器基板に導体、抵抗体、絶縁体等の機能部
分を形成したR,C内蔵の磁器基板の断面図である。 第8図は、従来の磁器基板の断面図である。 第9図は、従来試みられている方法による複数の高誘電
体部分を有する磁器基板の断面図である。 1,21,31……成形体,2,23,32,41……誘電体磁器,3,24,3
3,42……低誘電率物質,22……半導体磁器,43……導体,4
4……抵抗体,45……絶縁体。
FIG. 1 is a process explanatory view for explaining a manufacturing process of a porcelain substrate which is one embodiment of the present invention, and FIG. 2 (a) is a cross-sectional view of a press-formed product in which a recess is formed at this time. ,
(B) shows a cross-sectional view of a porcelain substrate having recesses filled with substances having different dielectric constants. FIG. 3 is a process explanatory view for explaining another manufacturing process of the porcelain substrate which is one embodiment of the present invention. FIG. 4 (a) is a molded body at this time, and FIG. 3C is a cross-sectional view of a semiconductor porcelain substrate in which the recesses are formed, and FIG. FIG. 5 is a process explanatory view for explaining still another manufacturing process of the porcelain substrate which is one embodiment of the present invention. FIG. 6 (a) is a molded product at this time, and FIG. A dielectric ceramic substrate having a recess formed therein, and (c) are cross-sectional views of the dielectric ceramic substrate having the recess filled with substances having different permittivities. FIG. 7A is a plan view of a porcelain substrate which is one embodiment of the present invention, FIG. 7B is a sectional view taken along line AA in FIG. 7A, and FIG.
FIG. 3 is a cross-sectional view of a porcelain substrate with built-in R and C in which functional parts such as conductors, resistors, and insulators are further formed on this porcelain substrate. FIG. 8 is a sectional view of a conventional porcelain substrate. FIG. 9 is a cross-sectional view of a porcelain substrate having a plurality of high-dielectric-constant portions according to a conventionally attempted method. 1,21,31 …… Molded body, 2,23,32,41 …… Dielectric porcelain, 3,24,3
3,42 …… Low dielectric constant material, 22 …… Semiconductor porcelain, 43 …… Conductor, 4
4 ... Resistor, 45 ... Insulator.

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】誘電体乃至はその前駆体を含む成形体であ
り、該成形体は、該成形体材料の一次焼成体の表面に金
属又は金属酸化物を塗布し、二次焼成して粒界絶縁層を
形成せしめた成形体であり、前記成形体に設けられた凹
部に、前記成形体の誘電率とは異なる誘電率の物質を充
填して形成したことを特徴とする電子材料セラミック。
1. A molded body containing a dielectric or a precursor thereof, which is formed by applying a metal or a metal oxide to the surface of a primary fired body of the molded body material and secondarily firing it. An electronic material ceramic, which is a molded body in which a field insulating layer is formed, and which is formed by filling a recess provided in the molded body with a substance having a dielectric constant different from that of the molded body.
【請求項2】凹部に低誘電率の物質が充填されて低誘電
率化されている特許請求の範囲第(1)項記載の電子材
料セラミック。
2. The electronic material ceramic according to claim 1, wherein the recess has a low dielectric constant by being filled with a substance having a low dielectric constant.
【請求項3】前記成形体は、BaTiO3−Dy2O3−SiO2系の
材料からなる特許請求の範囲第(1)項記載の電子材料
セラミック。
3. The electronic material ceramic according to claim 1, wherein the molded body is made of a BaTiO 3 —Dy 2 O 3 —SiO 2 system material.
【請求項4】前記物質は、PbSiO3からなる特許請求の範
囲第(1)項記載の電子材料セラミック。
4. The electronic material ceramic according to claim 1, wherein the substance is PbSiO 3 .
【請求項5】誘電体乃至はその前駆体を含む成形体であ
り、該成形体は、該成形体材料の一次焼成体の表面に金
属又は金属酸化物を塗布し、二次焼成して粒界絶縁層を
形成せしめた成形体であり、前記成形体に設けられた凹
部に、前記成形体の誘電率とは異なる誘電率の物質を充
填して形成した電子材料セラミックにより構成されてい
ることを特徴とする電子回路用基体。
5. A molded body containing a dielectric or a precursor thereof, wherein the molded body is formed by applying a metal or a metal oxide to the surface of a primary fired body of the molded body material and then performing secondary firing. A molded body having a field insulating layer formed thereon, which is composed of an electronic material ceramic formed by filling a recess provided in the molded body with a substance having a dielectric constant different from that of the molded body. A substrate for an electronic circuit characterized by:
【請求項6】凹部に低誘電率物質が充填されて低誘電率
化された部分を挟んで、互いに離隔した2つ以上の高誘
電体部分を有している特許請求の範囲第(5)項記載の
電子回路用基体。
6. The method according to claim 5, wherein the recess has two or more high-dielectric portions which are separated from each other with a portion having a low dielectric constant filled with a low-dielectric material being sandwiched therebetween. A substrate for an electronic circuit according to item.
【請求項7】セラミック内部乃至は周囲に、更に、導
体、抵抗体及び絶縁体のうち少なくとも1種類の機能部
分を有している特許請求の範囲第(5)項又は特許請求
の範囲第(6)項記載の電子回路用基体。
7. The claim (5) or claim (5) further comprising a functional portion of at least one of a conductor, a resistor and an insulator inside or around the ceramic. A substrate for an electronic circuit according to item 6).
【請求項8】前記成形体は、BaTiO3−Dy2O3−SiO2系の
材料からなる特許請求の範囲第(5)項記載の電子回路
用基体。
8. The electronic circuit substrate according to claim 5, wherein the molded body is made of a BaTiO 3 --Dy 2 O 3 --SiO 2 system material.
【請求項9】前記物質は、PbSiO3からなる特許請求の範
囲第(5)項記載の電子回路用基体。
9. The electronic circuit substrate according to claim 5, wherein the substance is PbSiO 3 .
JP60171862A 1985-08-06 1985-08-06 Electronic material ceramic and substrate for electronic circuit using the same Expired - Fee Related JPH0738489B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60171862A JPH0738489B2 (en) 1985-08-06 1985-08-06 Electronic material ceramic and substrate for electronic circuit using the same
US06/892,320 US4759965A (en) 1985-08-06 1986-08-04 Ceramic, preparation thereof and electronic circuit substrate by use thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60171862A JPH0738489B2 (en) 1985-08-06 1985-08-06 Electronic material ceramic and substrate for electronic circuit using the same

Publications (2)

Publication Number Publication Date
JPS6232681A JPS6232681A (en) 1987-02-12
JPH0738489B2 true JPH0738489B2 (en) 1995-04-26

Family

ID=15931162

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPH0738489B2 (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5017946U (en) * 1973-06-12 1975-02-27
JPS5917860B2 (en) * 1976-04-20 1984-04-24 松下電器産業株式会社 Manufacturing method of semiconductor device
JPS5519075A (en) * 1978-07-31 1980-02-09 Touyoko Shokuhin Kogyo Kk Preparation of coating chocolate for ice cream comprising fruit juice and natural pigment
JPS57177589A (en) * 1981-04-27 1982-11-01 Hitachi Electronics Composite board
JPS5858702A (en) * 1981-10-05 1983-04-07 松下電器産業株式会社 Electrode structure of ceramic varistors, etc.
JPS5867089A (en) * 1981-10-19 1983-04-21 株式会社日立製作所 High frequency circuit board

Also Published As

Publication number Publication date
JPS6232681A (en) 1987-02-12

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