JPH0666226B2 - Capacitor - Google Patents
CapacitorInfo
- Publication number
- JPH0666226B2 JPH0666226B2 JP62097811A JP9781187A JPH0666226B2 JP H0666226 B2 JPH0666226 B2 JP H0666226B2 JP 62097811 A JP62097811 A JP 62097811A JP 9781187 A JP9781187 A JP 9781187A JP H0666226 B2 JPH0666226 B2 JP H0666226B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- electrode
- ring
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、各種の電子機器に用いられるコンデンサに関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a capacitor used in various electronic devices.
従来の技術 誘電体として、プラスチックフィルム,金属化成膜、セ
ラミック等を用いたコンデンサが使用されてきた。2. Description of the Related Art Capacitors made of plastic films, metallized films, ceramics, etc. have been used as dielectrics.
発明が解決しようとする問題点 本発明は前述のような誘電体層を組入れることなく、電
解重合で得られる有機薄膜を利用した新しいタイプコン
デンサを提供するものである。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention The present invention provides a new type capacitor using an organic thin film obtained by electrolytic polymerization without incorporating the above-mentioned dielectric layer.
問題点を解決するための手段 本発明は、分子内に少なくとも炭素環,含窒素環,含セ
レン環,含酸素環,アミノ芳香族環の中の1グループを
含有する化合物の電界重合で得られる有機薄膜の導電
体,半導体特性領域の膜面上に各種の有機系,非酸化物
系無機物質または安定性の良好な金属の高原子価物質か
らなる絶縁薄膜を形成させ、重ねて、この絶縁膜面上に
アルミニウム電極を設け、他面にはアルミニウムと別種
の金属を直接付着させて電極とする。Means for Solving the Problems The present invention can be obtained by electropolymerization of a compound containing at least one group of a carbon ring, a nitrogen-containing ring, a selenium-containing ring, an oxygen-containing ring and an amino aromatic ring in a molecule. An insulating thin film made of various organic or non-oxide inorganic substances or highly stable metallic high valence substances is formed on the conductor of the organic thin film or the film surface of the semiconductor characteristic region, and the insulating thin films are stacked and stacked. An aluminum electrode is provided on the film surface, and a metal other than aluminum is directly attached to the other surface to form an electrode.
なお、上記の別種金属電極は、電解重合中に箔等の形状
で陽電極材として用いて、重合体膜付着体となったもの
をそのまま利用してもよく、重合体膜を金属箔から離脱
させて、新に蒸着法で金属膜電極を形成させても良い。
又、これらの電解重合膜は製膜後に、純水,純溶剤等で
洗浄し、遊離塩,残留溶媒,未反応モノマー等を除去し
て、乾燥後に前述の加工を行う。The above-mentioned different metal electrode may be used as a positive electrode material in the form of a foil or the like during electrolytic polymerization, which has become a polymer film-adhered body, and the polymer film may be separated from the metal foil. Then, the metal film electrode may be newly formed by the vapor deposition method.
Further, these electropolymerized films are washed with pure water, a pure solvent or the like after the film formation to remove free salts, residual solvents, unreacted monomers and the like, and dried and then subjected to the above-mentioned processing.
電解重合に使用するモノマーには、ピロール,フラン、
セレノフェン,パラフェニレン、アントラセン,アズレ
ン,アニリン等があり、電解重合時に支持電解質として
用いる塩類には、ホウ弗化リチウム,パラトルエンスル
ホネート,過塩素酸銀,過塩素酸リチウム,塩化銅,ホ
ウ弗化テトラブチルアミン,過塩素酸テトラブチルアミ
ン等があり、これらを単独又は混合して用いる。溶媒に
はベンゾニトリル,アセトニトリル,ニトロベンゼン,
オルソジクロルベンゼン,ジメチルスルフェート,水等
がある。Monomers used for electrolytic polymerization include pyrrole, furan,
There are selenophene, paraphenylene, anthracene, azulene, aniline, etc., and salts used as supporting electrolytes during electrolytic polymerization include lithium borofluoride, paratoluene sulfonate, silver perchlorate, lithium perchlorate, copper chloride, borofluoride. There are tetrabutylamine, tetrabutylamine perchlorate, and the like, and these are used alone or in combination. Benzonitrile, acetonitrile, nitrobenzene,
Ortho-dichlorobenzene, dimethyl sulfate, water, etc.
又、前記の絶縁性薄膜の形成法には種々のものがある。There are various methods for forming the above-mentioned insulating thin film.
即ち、有機薄膜を基板として、この面上に形成させる方
法である。真空蒸着法,プラズマ重合法,スパッ
タ法,ラングミュアー・ブロジェット(LB)膜法等
が可能である。That is, it is a method of forming an organic thin film as a substrate on this surface. A vacuum deposition method, a plasma polymerization method, a sputtering method, a Langmuir-Blodgett (LB) film method and the like are possible.
は、SiO2,Al2O3,Ti2等の安定な金属の高原子価酸化物
を抵抗加熱,電子ビーム等の加熱源により真空蒸着を行
う。はスチレン,メチルメタクリレート,トルエン,
SiCl4,パラキシレン等の有機物,無機化合物あるいは
有機金属化合物等をプラズマ重合させて薄膜化する。
はAl2O3,SiO2,SiC等の金属高原子価酸化物,非酸化物系
無機化合物をソースとしてスパッタリングして薄膜化す
る。は長鎖アルキル石けん,両親媒性高分子等を水面
上に展開して、上記基板上に引き上げて積層膜とする。Is a high-valence oxide of a stable metal such as SiO 2 , Al 2 O 3 , or Ti 2 which is subjected to resistance heating and vacuum deposition by a heating source such as an electron beam. Is styrene, methyl methacrylate, toluene,
A thin film is formed by plasma polymerizing an organic substance such as SiCl 4 , paraxylene, an inorganic compound or an organometallic compound.
Is a thin film formed by sputtering using a metal high valence oxide such as Al 2 O 3 , SiO 2 , or SiC, or a non-oxide inorganic compound as a source. Develops a long-chain alkyl soap, amphipathic polymer, etc. on the water surface and pulls up on the substrate to form a laminated film.
作用 本発明者は、前記の電解重合で得られる各種の有機薄膜
の導電体,半導体特性領域のものの片面上に前記各種の
絶縁薄膜を形成し、重ねてこの絶縁薄膜上にアルミニウ
ムを真空蒸着した系について種々、実験,研究の結果,
片面に上記の2層薄膜を形成し、他面上にアルミニウム
とは別種の金属を直接付着させた系では、電極作用によ
り、極めて大容量でもれ電流の小なるコンデンサが得ら
れ、更には絶縁膜を設けない系に比して格段に高い耐電
圧を示すことを見出した。又、絶縁膜がこれらの優れた
コンデンサの誘電特性へ寄与しているのではなく、電解
重合膜の電極作用のためにこの特性が達成されているこ
とも同時に確認した。The present inventors formed the above-mentioned various insulating thin films on one surface of the conductors and semiconductor characteristic regions of the various organic thin films obtained by the above-mentioned electrolytic polymerization, and stacked and vacuum-deposited aluminum on this insulating thin film. System, various experiments, research results,
In a system in which the above-mentioned two-layer thin film is formed on one surface and a metal other than aluminum is directly adhered on the other surface, an electrode function produces a capacitor with extremely large capacity and small leakage current, and further insulation It has been found that it shows a much higher withstand voltage than the system without a film. It was also confirmed at the same time that the insulating film did not contribute to the excellent dielectric properties of these capacitors, but that this property was achieved due to the electrode action of the electrolytically polymerized film.
なお、上記の別種金属種としては、アルミニウムより仕
事関係の大なる金属を用いるのがよい。In addition, as the above-mentioned different kind of metal, it is preferable to use a metal having a work relationship larger than that of aluminum.
実施例 実施例による各種コンデンサの構成および特性を表に示
す。Examples Tables show configurations and characteristics of various capacitors according to Examples.
ここに用いたピロール,フラン,アニリンの各重合体は
それぞれ、ベンゾニトリル−過塩素酸リチウム系,アセ
トニトリル−ホウ弗化リチウム系,水−パラトルエンス
ルホネート系で電解重合した膜厚5μmのものであり、
電極Bに用いたNi,Co箔はいずれも6μm厚である。
又、各々の絶縁膜とその形成方法は化学記号及び前出の
,,,で表記し、更に膜厚も記した。 The pyrrole, furan, and aniline polymers used here are those having a film thickness of 5 μm, which are obtained by electrolytic polymerization of benzonitrile-lithium perchlorate system, acetonitrile-lithium borofluoride system, and water-paratoluenesulfonate system, respectively. ,
The Ni and Co foils used for the electrode B are both 6 μm thick.
Further, each insulating film and its forming method are represented by chemical symbols and the above-mentioned ,,, and the film thickness is also described.
なお、V1は絶縁薄膜なしに直接Alを真空蒸着したもの
の耐電圧であり、V2は各絶縁膜上にAlを真空蒸着した
もののそれである。又、これらのコンデンサは有極性で
あり、アルミニウム電極側を正とした時に高い耐電圧が
得られ、表中の値はこの時の値を記した。It should be noted that V 1 is the withstand voltage of Al directly vacuum-deposited without an insulating thin film, and V 2 is that of Al vacuum-deposited on each insulating film. Further, these capacitors were polar, and high withstand voltage was obtained when the aluminum electrode side was positive, and the values in the table are the values at this time.
表から明確なように、これらのコンデンサは極めて大な
る容量を示すとともにそのもれ電流は小で、耐電圧も大
きく向上する。As is clear from the table, these capacitors show extremely large capacitance, their leakage current is small, and their withstand voltage is greatly improved.
なお、上記の絶縁薄膜は、膜厚50〜700Åの範囲で
効果があり、50〜200Åで最大の効果を示した。The above-mentioned insulating thin film was effective in the film thickness range of 50 to 700Å, and showed the maximum effect in the film thickness of 50 to 200Å.
重合体薄膜は、電解時の条件を設定すれば電気的に制御
でき、均一超薄膜化でき、1μm厚以下の長尺膜,広巾
膜も得ることが出来た。この膜厚でも表中の諸特性値は
維持されており、より特性の向上したものさえあった。
この膜より、巻回構造,積層構造のコンデンサも製造で
きた。The polymer thin film could be electrically controlled by setting the conditions during electrolysis, could be made into a uniform ultrathin film, and a long film having a thickness of 1 μm or less and a wide film could be obtained. Even with this film thickness, the various characteristic values in the table were maintained, and even some of the characteristics were improved.
From this film, capacitors with a wound structure or a laminated structure could be manufactured.
又、他の有機薄膜,電極機系でも同様な結果が得られ
た。Similar results were obtained with other organic thin films and electrode systems.
発明の効果 本発明によれば、各種電解重合薄膜の電極効果により、
大容量で、もれ電流が小で、かつ高耐圧性の優れたコン
デンサが得られ、重合体膜の超薄膜化により、更に小
型,軽量で乾式のコンデンサが得られる。Effect of the Invention According to the present invention, due to the electrode effect of various electrolytically polymerized thin films,
It is possible to obtain a capacitor having a large capacity, a small leakage current, and a high withstand voltage. By making the polymer film ultra-thin, a further compact, lightweight and dry type capacitor can be obtained.
Claims (1)
セレン環,含酸素環,アミノ香族環のいずれかを含有す
る化合物の電解重合で得られる有機薄膜の片面上に有機
系化合物,非酸化物系無機化合物または金属の高原子価
酸化物からなる絶縁薄膜を形成し、前記絶縁薄膜の膜面
上にアルミニウムからなる電極を設け、前記有機薄膜の
他方の面上に前記電極とは異なる金属からなる電極を設
けたことを特徴とするコンデンサ。1. An organic compound on one surface of an organic thin film obtained by electrolytic polymerization of a compound containing at least one of a carbon ring, a nitrogen-containing ring, a selenium-containing ring, an oxygen-containing ring and an amino aromatic ring in the molecule. Forming an insulating thin film made of a non-oxide inorganic compound or a high valent oxide of a metal, providing an electrode made of aluminum on the film surface of the insulating thin film, and providing the electrode on the other surface of the organic thin film. Is a capacitor having electrodes made of different metals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62097811A JPH0666226B2 (en) | 1987-04-21 | 1987-04-21 | Capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62097811A JPH0666226B2 (en) | 1987-04-21 | 1987-04-21 | Capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63262825A JPS63262825A (en) | 1988-10-31 |
| JPH0666226B2 true JPH0666226B2 (en) | 1994-08-24 |
Family
ID=14202145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62097811A Expired - Lifetime JPH0666226B2 (en) | 1987-04-21 | 1987-04-21 | Capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0666226B2 (en) |
-
1987
- 1987-04-21 JP JP62097811A patent/JPH0666226B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63262825A (en) | 1988-10-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070824 Year of fee payment: 13 |