JPH0667631B2 - Thermal head - Google Patents
Thermal headInfo
- Publication number
- JPH0667631B2 JPH0667631B2 JP7350586A JP7350586A JPH0667631B2 JP H0667631 B2 JPH0667631 B2 JP H0667631B2 JP 7350586 A JP7350586 A JP 7350586A JP 7350586 A JP7350586 A JP 7350586A JP H0667631 B2 JPH0667631 B2 JP H0667631B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- thermal head
- conductive film
- layer
- head according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010438 heat treatment Methods 0.000 claims description 19
- 230000001681 protective effect Effects 0.000 claims description 17
- 229920005989 resin Polymers 0.000 claims description 17
- 239000011347 resin Substances 0.000 claims description 17
- 238000005299 abrasion Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 150000008065 acid anhydrides Chemical class 0.000 claims description 2
- 229920002050 silicone resin Polymers 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 17
- 238000005260 corrosion Methods 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
Landscapes
- Electronic Switches (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明はファクシミリ,プリンタ等に用いられるサーマ
ルヘッドに係り、特にサーマルヘッドの導電膜,耐摩耗
膜,保護樹脂膜に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermal head used in facsimiles, printers and the like, and more particularly to a conductive film, a wear resistant film, and a protective resin film of the thermal head.
従来の技術 サーマルヘッドに用いられる感熱紙は吸水性があり、こ
の水分が記録時の加熱により水蒸気となり、サーマルヘ
ッド周囲の空間に充満すため、密閉構造に近いファクシ
ミリやプリンタでは高温多湿となる場合が多い。Conventional technology Thermal paper used for thermal heads has water absorption properties, and this moisture turns into steam due to heating during recording and fills the space around the thermal head, resulting in high temperature and high humidity in facsimiles and printers with a closed structure. There are many.
感熱紙はファクシミリ,プリンタ等のしごきローラー,
カッター等の金属部分に接触しており、この金属部分は
一般にセットのフレームグランドと同一電位である。一
方、サーマルヘッドの共通電極には記録電圧が印加さ
れ、フレームグランドに対して一般に9〜24Vの正電位
に保たれる。感熱紙は耐摩耗膜に接するため、耐摩耗膜
の厚み方向に記録電圧が印加される結果となる。このよ
うな条件のもとでは、65℃95%の環境下の1000時間放置
試験に耐え得るサーマルヘッドでも短時間に電極腐食に
よる断線不良が発生する。特に節電スイッチの無い、記
録電圧ガサーマルヘッドに常時印加されているセットで
は数年間にわたって記録電圧が印加されるため大きな問
題となる。Thermal paper is used for squeezing rollers such as facsimiles and printers.
It is in contact with a metal part such as a cutter, which is generally at the same potential as the frame ground of the set. On the other hand, a recording voltage is applied to the common electrode of the thermal head, and is generally maintained at a positive potential of 9 to 24 V with respect to the frame ground. Since the thermal paper is in contact with the abrasion resistant film, a recording voltage is applied in the thickness direction of the abrasion resistant film. Under these conditions, even a thermal head that can withstand a 1000-hour storage test in an environment of 65 ° C and 95% will have a disconnection defect due to electrode corrosion in a short time. In particular, in a set in which the recording voltage is always applied to the gathermal head without a power saving switch, the recording voltage is applied for several years, which is a serious problem.
電極腐食の原因は2つに分類できることがわかった。第
1は耐摩耗膜の欠陥に起因するもので、第2は保護樹脂
膜中の不純物によるものである。It was found that the causes of electrode corrosion can be classified into two. The first is due to defects in the wear resistant film, and the second is due to impurities in the protective resin film.
第5図は従来のサーマルヘッドの発熱体基板上の主要部
断面構造を示すもので、グレーズドアルミナ等の基板11
上にSiTa,TaN等の発熱抵抗膜12を形成し、この上に導電
膜13を形成する。発熱抵抗膜12のうち導電膜13に被覆さ
れない領域14が発熱体である。次に発熱体14および導電
膜13の一部を被覆するように耐摩耗膜15を形成する。耐
摩耗膜15の一部および導電膜13の一部を被覆するように
エポキシ等の保護樹脂膜16を形成する。FIG. 5 shows the cross-sectional structure of the main part on the heating element substrate of the conventional thermal head.
A heating resistance film 12 made of SiTa, TaN or the like is formed thereon, and a conductive film 13 is formed thereon. A region 14 of the heating resistance film 12 which is not covered with the conductive film 13 is a heating element. Next, a wear resistant film 15 is formed so as to cover the heating element 14 and a part of the conductive film 13. A protective resin film 16 made of epoxy or the like is formed so as to cover a part of the abrasion resistant film 15 and a part of the conductive film 13.
発明が解決しようとする問題点 次に第1図の構造のサーマルヘッドの問題点について述
べる。耐摩耗膜15は硬度の高い物質である必要があるた
めSiC,Si3N4,Ta2O5,Al2O3,BP等をスパッタ法またはCVD
法で形成するが、形成された膜はいずれも大きな内部応
力を有するため、形成装置内の堆積膜が剥離しやすく、
この剥離片が耐摩耗膜15のピンホールの原因となる。サ
ーマルヘッドの耐摩耗膜面積は一例として256mm×8mmと
大きくピンホールフリーとすることはきわめて困難であ
る。Problems to be Solved by the Invention Next, problems of the thermal head having the structure of FIG. 1 will be described. Since the abrasion resistant film 15 needs to be a substance having a high hardness, SiC, Si 3 N 4 , Ta 2 O 5 , Al 2 O 3 , BP, etc. are formed by the sputtering method or the CVD method.
Although the formed film has a large internal stress, the deposited film in the forming device is easily peeled off,
The peeled pieces cause pinholes in the abrasion resistant film 15. The wear-resistant film area of the thermal head is 256 mm x 8 mm, for example, and it is extremely difficult to make it pinhole-free.
一方、導電膜13としては高導電率でかつ低価格な金属と
してcuまたはAlがよく用いられるがこれらはいずれも腐
蝕しやすい金属である。On the other hand, as the conductive film 13, cu or Al is often used as a metal having high conductivity and low cost, but these are all metals that are easily corroded.
65℃,95%の環境条件下で導電膜13を9〜24Vの正電位に
保ち、フレームグランド電位に保った感熱紙を耐摩耗膜
15に接触させてプラテンを押圧した状態で保持すると10
0時間以内に、耐摩耗膜ピンホール部の導電膜13が腐蝕
し断面状態となった。The thermal conductive paper 13 held at the frame ground potential by keeping the conductive film 13 at a positive potential of 9 to 24 V under the environmental conditions of 65 ° C and 95% is an abrasion resistant film.
When the platen is pressed and held in contact with 15
Within 0 hours, the conductive film 13 in the wear-resistant film pinhole portion was corroded into a cross-sectional state.
次に感熱紙をエポキシの保護樹脂膜16に接触させてプラ
テンを押圧した状態に保持して同様の試験をしたとこ
ろ、やはり100時間以内にエポキシ樹脂に接する導電膜1
3が腐蝕しで断線状態となった。この原因はエポキシ樹
脂中の未硬化アミンが原因と考えられる。なお感熱紙が
軽くエポキシ樹脂に接する試験でも全く同様の腐蝕が確
認された。Next, a thermal paper was brought into contact with the epoxy protective resin film 16 and the platen was held in a pressed state, and a similar test was conducted.
3 was corroded and disconnected. It is considered that this is due to the uncured amine in the epoxy resin. In the test in which the thermal paper was lightly in contact with the epoxy resin, the same corrosion was confirmed.
本発明は以上のようなサーマルヘッド導電膜の腐蝕を防
止することを目的とする。It is an object of the present invention to prevent corrosion of the thermal head conductive film as described above.
問題点を解決するための手段 上記問題点を解決するために本発明は、基板上に形成さ
れた複数個の発熱抵抗体と、この発熱抵抗体に接続する
導電膜と、この導電膜の一部および前記発熱抵抗体を被
覆する耐摩耗膜と、この耐摩耗膜の一部および前記導電
膜の一部を被覆する保護樹脂膜とを有し、少なくとも前
記保護樹脂膜に被覆されない領域の耐摩耗膜に接する導
電膜が表面に酸化膜を形成するCr膜である構成としたも
のである。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides a plurality of heating resistors formed on a substrate, a conductive film connected to the heating resistors, and one of the conductive films. Part and the wear resistant film covering the heating resistor, and a protective resin film covering a part of the wear resistant film and a part of the conductive film, and at least a region not covered by the protective resin film. The conductive film in contact with the wear film is a Cr film which forms an oxide film on the surface.
作 用 高温多湿中では水分に各種不純物が溶けこみ電解質とな
るため、正電位に保った金属は腐蝕する。しかし表面に
酸化膜を有するCr膜では腐蝕が進行しないことが確認さ
れた。Operation In high temperature and high humidity, various impurities dissolve in water and become an electrolyte, so the metal kept at positive potential corrodes. However, it was confirmed that the Cr film having an oxide film on the surface did not corrode.
本発明は導電膜に表面に酸化膜を有するCr膜を用いるこ
とにより腐蝕を防止すると同時に、耐麻耗膜のピホール
を有機オキシシランを加熱して生じた膜で被覆してピン
ホールを減少させ、さらに膜厚方向に電位が印加されて
も導電膜を腐蝕しない保護樹脂膜を有するサーマルヘッ
ドを提供することができる。The present invention prevents corrosion by using a Cr film having an oxide film on the surface of the conductive film, and at the same time, reduces the pinholes by coating the wear-resistant film of pikhole with a film formed by heating organic oxysilane, Further, it is possible to provide a thermal head having a protective resin film that does not corrode the conductive film even when a potential is applied in the film thickness direction.
実施例 第1図に本発明の第1の実施例を示す。グレードアルミ
ナ基板1上にTiC−SiO2の発熱抵抗膜2を形成し、この
上に最上層がCrである導電膜3を形成しホトエッチング
を行う。次にスパッタ装置内で基板温度を330〜400℃に
加熱してSiCとSi3N4との混合膜から成る耐摩耗膜5を発
熱体4および導電膜3の一部を被覆するように形成す
る。この後に保護樹脂膜6を耐摩耗膜5の一部および導
電膜3の一部を被覆するように形成する。以上のように
して形成されたサーマルヘッドでは導電膜3の表面をオ
ージェ分析すると導電膜表面にCr酸化膜3aの存在が認め
られる。この理由は耐摩耗膜形成時の基板温度が330〜4
00℃と高いことに起因しており、300℃以下ではCr酸化
膜3aの形成が、不十分であることがわかった。Embodiment 1 FIG. 1 shows a first embodiment of the present invention. A heating resistance film 2 of TiC-SiO 2 is formed on a grade alumina substrate 1, a conductive film 3 having an uppermost layer of Cr is formed thereon, and photoetching is performed. Next, the substrate temperature is heated to 330 to 400 ° C. in the sputtering device to form a wear resistant film 5 made of a mixed film of SiC and Si 3 N 4 so as to cover the heating element 4 and a part of the conductive film 3. To do. After that, the protective resin film 6 is formed so as to cover a part of the abrasion resistant film 5 and a part of the conductive film 3. In the thermal head thus formed, the presence of the Cr oxide film 3a is recognized on the surface of the conductive film by Auger analysis of the surface of the conductive film 3. The reason for this is that the substrate temperature at the time of forming the wear resistant film is 330 to 4
This is due to the high temperature of 00 ° C., and it was found that the formation of the Cr oxide film 3a was insufficient at 300 ° C. or lower.
第2図は本発明の第2の実施例を示し、導電膜3以外は
第1の実施例と同じである。導電膜3の最下層3AがCr,
中間層3BがCu,最上層3CがCrの3層構造より成り、最上
層3Cの表面にはCr酸化膜3aが形成される。FIG. 2 shows a second embodiment of the present invention, which is the same as the first embodiment except for the conductive film 3. The bottom layer 3A of the conductive film 3 is Cr,
The intermediate layer 3B has a three-layer structure of Cu and the uppermost layer 3C is Cr, and a Cr oxide film 3a is formed on the surface of the uppermost layer 3C.
第3の実施例は第2図において、導電膜の最下層3Aおよ
び中間層3Bが同一材料の単一層のAlから成る他は第2の
実施例と同じである。The third embodiment is the same as the second embodiment except that the lowermost layer 3A and the intermediate layer 3B of the conductive film in FIG. 2 are made of a single layer of the same material, Al.
第4の実施例の第3図のように導電膜の最下層3AのCrと
中間層3BのCuを形成後、ホトエッチングした後、最上層
3CのCr膜を形成し、3Aと3Bとを被覆するように3A,3Bよ
りも幅広くホトエッチングする。このようにすれば導電
膜端面もCr膜3Cで被覆され、このCr膜3Cの表面にはCr酸
化膜3aが形成される。After forming Cr of the lowermost layer 3A and Cu of the intermediate layer 3B of the conductive film as shown in FIG. 3 of the fourth embodiment, photoetching is performed, and then the uppermost layer is formed.
A 3C Cr film is formed and photoetching is performed wider than 3A and 3B so as to cover 3A and 3B. By doing so, the end face of the conductive film is also covered with the Cr film 3C, and the Cr oxide film 3a is formed on the surface of the Cr film 3C.
第5の実施例は第4の実施例において導電膜の最下層3A
および中間層3Bが同一材料の単一層Alから成る他は第4
の実施例と同じである。The fifth embodiment is the lowermost layer 3A of the conductive film in the fourth embodiment.
And a fourth layer except that the intermediate layer 3B is made of a single layer Al of the same material.
Is the same as the embodiment described above.
第6の実施例は第4図に示すように、導電膜の下層3Aの
Crと上層3BのCuまたはAlを形成し、保護樹脂膜6に被覆
されない耐摩耗膜5の下の導電膜3のみは上層3Bを除去
し下層3AのCrを露出させる。Cr表面には酸化膜3aが形成
される。In the sixth embodiment, as shown in FIG.
The upper layer 3B is removed and only the lower conductive layer 3A is exposed by forming Cr and Cu or Al of the upper layer 3B and removing only the conductive film 3 below the abrasion resistant film 5 not covered by the protective resin film 6. An oxide film 3a is formed on the surface of Cr.
次に保護樹脂膜6の実施例を示す。第1の実施例は酸無
水物を硬化剤とするエポキシ樹脂で硬化温度は150℃以
上である。第2の実施例はエポキシ変成シリコーン樹脂
である。Next, an example of the protective resin film 6 will be shown. The first embodiment is an epoxy resin using an acid anhydride as a curing agent, and the curing temperature is 150 ° C or higher. The second example is an epoxy modified silicone resin.
さらに耐摩耗膜ピンホールを充填する実施例について述
べる。耐摩耗膜5上にスピナー法で液体のSi(O(C
H3)2CH)4を塗布し、70〜200℃に加熱すると厚さ1μ
mのSi(OH)4を形成することができる。液体塗付であ
るためピンホールは完全に充填される。ただしSi(OH)
4は摩耗に耐えるほど硬くないため、サーマルヘッド印
字中に部分的摩耗が生じ濃度ムラの原因になる。このた
め#2000のAl2O3粉の研摩紙でプラテン圧接領域である
幅4mmを研摩しSi(OH)4を除去するとピンホール内に
充填されたSi(OH)4は除去されずに残り、耐摩耗膜は
ピンホールフリーとなる。Furthermore, an example of filling the wear resistant film pinhole will be described. Liquid Si (O (C (C
H 3 ) 2 CH) 4 is applied and heated to 70-200 ° C, the thickness is 1μ.
m (m) of Si (OH) 4 can be formed. Since it is liquid-coated, the pinhole is completely filled. However, Si (OH)
Since No. 4 is not hard enough to withstand abrasion, partial abrasion occurs during printing of the thermal head and causes density unevenness. Al 2 O 3 Si (OH) 4 , which is filled in the platen press polished width 4mm is an area Si (OH) 4-pin hole is removed at sandpaper powder of this for # 2000 remained without being removed The wear-resistant film is pinhole-free.
なお(C2H5)Si(OC2H5)3を用いても同様の効果があ
り、また金属としてSi以外のTa,Zn等でも同様の効果が
ある。The same effect can be obtained by using (C 2 H 5 ) Si (OC 2 H 5 ) 3, and the same effect can be obtained by using Ta, Zn or the like other than Si as the metal.
発明の効果 以上の第1〜第6の実施例のサーマルヘッドの共通電極
に24Vの正電位を印加し、プラテンで耐摩耗膜上へ押圧
した感熱紙をOVとして、65℃.95%の環境中に放置した
ところ500時間まで電極腐蝕が起こらないことを確認し
た。Effect of the Invention A positive voltage of 24 V is applied to the common electrode of the thermal heads of the above-described first to sixth embodiments, and the thermal paper pressed onto the abrasion resistant film by the platen is used as OV, and the environment is 65 ° C. 95%. When left inside, it was confirmed that electrode corrosion did not occur up to 500 hours.
オージェ分析の結果、スパッタ装置内で基板温度を330
〜400℃に加熱して耐摩耗膜を形成すると、上層Cr膜の
表面に安定な酸化Cr膜が形成されることがわかった。こ
れはスパッタ装置内の残留不純物ガスのO2によりCr表面
が酸化されたものと推定される。このため耐摩耗膜にピ
ンホールがあっても金属イオンの溶出が妨げられ腐蝕す
ることはない。また腐蝕しやすいCuやAlは表面に酸化Cr
膜を有するCr膜で被覆されているので安定である。As a result of Auger analysis, the substrate temperature was set to 330 in the sputtering system.
It was found that a stable Cr oxide film was formed on the surface of the upper Cr film when the wear resistant film was formed by heating to ~ 400 ℃. It is presumed that this is because the Cr surface was oxidized by the residual impurity gas O 2 in the sputtering apparatus. Therefore, even if there are pinholes in the wear-resistant film, elution of metal ions is prevented and corrosion will not occur. Also, Cu and Al, which are easily corroded, have Cr oxide on the surface.
It is stable because it is covered with a Cr film having a film.
さらにCr膜表面の酸化膜が不完全な個所、あるいはCr膜
のピンホールでCuやAlを完全に被覆できない個所を生じ
た場合には、第5の実施例で述べたように耐摩耗膜上に
Si(O(CH3)2CH)4を70〜200℃で加熱して形成され
た膜で被覆すればピンホールフリーの耐摩耗膜となり腐
蝕を防ぐことができる。ただしSi(O(CH3)2CH)4を
70〜200℃で加熱して形成された膜は硬度が高くないた
め、感熱紙で50m程度記録すると摩耗してしまうが耐摩
耗膜ピンホール内には残留し腐蝕防止に効果的であるこ
とがわかった。Further, if the oxide film on the surface of the Cr film is incomplete, or if a pinhole in the Cr film cannot completely cover Cu or Al, as described in the fifth embodiment, the wear-resistant film is formed. To
If Si (O (CH 3 ) 2 CH) 4 is coated with a film formed by heating at 70 to 200 ° C., it becomes a pinhole-free wear resistant film and can prevent corrosion. However, Si (O (CH 3 ) 2 CH) 4
Since the film formed by heating at 70-200 ℃ is not high in hardness, it will be worn when recording about 50m with thermal paper, but it will remain in the wear resistant film pinhole and it will be effective in preventing corrosion. all right.
なお、本発明の保護樹脂膜を用いたサーマルヘッドで
は、サーマルヘッドの共通電極に24Vの正電圧を印加
し、プラテンで保護樹脂膜上へ押圧した感熱紙をOVとし
て、65℃.95%の環境中に放置したところ500時間まで電
極腐蝕が起こらないことを確認した。これはアミン系硬
化剤のエポキシ樹脂のように電界で動くような物質を多
量に含まないからである。Incidentally, in the thermal head using the protective resin film of the present invention, a positive voltage of 24V is applied to the common electrode of the thermal head, and the thermal paper pressed onto the protective resin film by the platen is used as OV, and the temperature is 65 ° C. 95%. When left in the environment, it was confirmed that electrode corrosion did not occur up to 500 hours. This is because it does not contain a large amount of substances that move with an electric field, such as epoxy resins of amine curing agents.
第1図は本発明のサーマルヘッドの一実施例を示す要部
断面図、第2図〜第4図は本発明の他の実施例を示す要
部断面図、第5図は従来のサーマルヘッドを示す要部断
面図である。 1……基板、2……発熱抵抗膜、3……導電膜、4……
発熱体、5……耐摩耗膜、6……保護樹脂膜、3A……下
層導電膜、3B……中間層導電膜、3C……上層導電膜、3a
……酸化Cr膜。FIG. 1 is a sectional view of a main part showing an embodiment of the thermal head of the present invention, FIGS. 2 to 4 are sectional views of the main part of another embodiment of the present invention, and FIG. 5 is a conventional thermal head. FIG. 1 ... Substrate, 2 ... Heating resistance film, 3 ... Conductive film, 4 ...
Heating element, 5 ... wear resistant film, 6 ... protective resin film, 3A ... lower conductive film, 3B ... intermediate conductive film, 3C ... upper conductive film, 3a
...... Cr oxide film.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 元森 一博 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (56)参考文献 特開 昭57−87975(JP,A) 特開 昭57−87976(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kazuhiro Motomori 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) Reference JP-A-57-87975 (JP, A) JP-A-57 -87976 (JP, A)
Claims (7)
と、この発熱抵抗体に接続する導電膜と、この導電膜の
一部および前記発熱抵抗体を被覆する耐摩耗膜と、この
耐摩耗膜の一部および前記導電膜の一部を被覆する保護
樹脂膜とを有し、少なくとも前記保護樹脂膜に被覆され
ない領域の耐摩耗膜に接する導電膜が表面に酸化膜を有
するCr膜であることを特徴とするサーマルヘッド。1. A plurality of heat generating resistors formed on a substrate, a conductive film connected to the heat generating resistors, a wear resistant film covering a part of the conductive film and the heat generating resistors, A Cr film having a protective resin film that covers a part of the wear resistant film and a part of the conductive film, and the conductive film that is in contact with the wear resistant film at least in a region not covered by the protective resin film has an oxide film on the surface. Is a thermal head.
r,中間層がCu,最下層がCrの3層構造より成る特許請求
の範囲第1項記載のサーマルヘッド。2. The conductive film has an uppermost layer of C having an oxide film on its surface.
The thermal head according to claim 1, wherein the thermal head has a three-layer structure of r, the intermediate layer is Cu, and the lowermost layer is Cr.
下層がAlの2層構造より成る特許請求の範囲第1項記載
のサーマルヘッド。3. The conductive film, the upper layer of which has an oxide film on the surface,
The thermal head according to claim 1, wherein the lower layer has a two-layer structure of Al.
耐摩耗膜の下の導電膜がCr単体膜から成る特許請求の範
囲第1項記載のサーマルヘッド。4. The thermal head according to claim 1, wherein at least the conductive film below the abrasion resistant film which is not covered with the protective resin film is a Cr single film.
して形成された膜で被覆されている特許請求の範囲第1
項記載のサーマルヘッド。5. The upper layer of the wear resistant film is covered with a film formed by heating an organic oxysilane.
The thermal head according to the item.
または酸無水物系の硬化剤を用いたエポキシ樹脂である
特許請求の範囲第1項記載のサーマルヘッド。6. The thermal head according to claim 1, wherein the protective resin film is an epoxy-modified silicone resin or an epoxy resin using an acid anhydride type curing agent.
0℃以上に加熱して形成された特許請求の範囲第1項記
載のサーマルヘッド。7. The wear-resistant film keeps the substrate temperature at 33 in a sputtering system.
The thermal head according to claim 1, which is formed by heating to 0 ° C. or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7350586A JPH0667631B2 (en) | 1986-03-31 | 1986-03-31 | Thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7350586A JPH0667631B2 (en) | 1986-03-31 | 1986-03-31 | Thermal head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62227762A JPS62227762A (en) | 1987-10-06 |
| JPH0667631B2 true JPH0667631B2 (en) | 1994-08-31 |
Family
ID=13520174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7350586A Expired - Lifetime JPH0667631B2 (en) | 1986-03-31 | 1986-03-31 | Thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0667631B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6426541B2 (en) * | 2015-06-25 | 2018-11-21 | 京セラ株式会社 | Thermal head and thermal printer |
-
1986
- 1986-03-31 JP JP7350586A patent/JPH0667631B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62227762A (en) | 1987-10-06 |
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