Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPH0673177B2 - Magnetic storage body and manufacturing method thereof - Google Patents
[go: Go Back, main page]

JPH0673177B2 - Magnetic storage body and manufacturing method thereof - Google Patents

Magnetic storage body and manufacturing method thereof

Info

Publication number
JPH0673177B2
JPH0673177B2 JP61196101A JP19610186A JPH0673177B2 JP H0673177 B2 JPH0673177 B2 JP H0673177B2 JP 61196101 A JP61196101 A JP 61196101A JP 19610186 A JP19610186 A JP 19610186A JP H0673177 B2 JPH0673177 B2 JP H0673177B2
Authority
JP
Japan
Prior art keywords
coated
inorganic oxide
magnetic
amorphous inorganic
head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61196101A
Other languages
Japanese (ja)
Other versions
JPS6352319A (en
Inventor
成嘉 鈴木
ケント エンゲル アラン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP61196101A priority Critical patent/JPH0673177B2/en
Publication of JPS6352319A publication Critical patent/JPS6352319A/en
Publication of JPH0673177B2 publication Critical patent/JPH0673177B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Lubricants (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) この発明は磁気記憶装置(磁気ディスク装置および磁気
ドラム装置)等にもちいられる磁気記憶体およびその製
造方法に関するものである。
Description: TECHNICAL FIELD The present invention relates to a magnetic storage body used for a magnetic storage device (a magnetic disk device and a magnetic drum device) and the like, and a manufacturing method thereof.

(従来の技術) 一般に記録再生磁気ヘッド(以下ヘッドと呼ぶ)と磁気
記憶体との主構成部とする磁気記憶装置の記録再生方法
には、大別して次のように二種類の方法がある。第一の
方法は、操作開始時にヘッドと磁気記憶体面との間に空
気層分の空間を作り、この状態で記録再生をする方法で
ある。この方法では、操作終了時に磁気記憶体の回転が
止まり、この時ヘッドと磁気記憶体面は操作開始時と同
様に接触摩擦状態にある。第二の方法は磁気記憶体に予
め所要の回転を与えておき、急激にヘッドを磁気記憶体
面上に押しつけることにより前記ヘッドと前記磁気記憶
体との間に空気層分の空間を作り、この状態で記憶再生
する方法である。このように第一の方法では操作開始時
および終了時にヘッドと磁気記憶体面は接触摩擦状態に
あり、第二の方法ではヘッドを磁気記憶体面に押しつけ
る際に接触摩擦状態にある。これらの接触摩擦状態にお
けるヘッドと磁気記憶体の間に生じる摩擦力は、ヘッド
および磁気記憶体を摩耗させ、ついにはヘッドおよび金
属磁性薄膜媒体に傷を作ることがある。
(Prior Art) Generally, there are roughly two types of recording / reproducing methods of a magnetic storage device, which mainly includes a recording / reproducing magnetic head (hereinafter referred to as a head) and a magnetic storage body, as follows. The first method is a method of making a space corresponding to an air layer between the head and the surface of the magnetic memory at the start of operation, and recording / reproducing in this state. In this method, the rotation of the magnetic storage body stops at the end of the operation, and at this time, the head and the surface of the magnetic storage body are in the contact friction state as at the start of the operation. The second method is to apply a required rotation to the magnetic memory in advance, and suddenly press the head against the surface of the magnetic memory to create a space corresponding to an air layer between the head and the magnetic memory. This is a method of storing and reproducing in the state. As described above, in the first method, the head and the magnetic memory surface are in a contact friction state at the start and end of the operation, and in the second method, the head is in a contact friction state when the head is pressed against the magnetic memory surface. The frictional force generated between the head and the magnetic memory body in these contact friction states may wear the head and the magnetic memory body, and eventually cause damage to the head and the metal magnetic thin film medium.

また前記接触状態においてヘッドのわずかな姿勢の変化
がヘッドにかかる加重を不均一にさせヘッドおよび磁気
記憶体表面に傷を作ることもある。
Further, in the contact state, a slight change in the posture of the head may make the load applied to the head non-uniform, and may scratch the head and the surface of the magnetic memory.

また更に前記接触摩擦状態におけるヘッドと磁気記憶体
間に生じる摩擦力は、特に多くのヘッドを取りつけた場
合に大きなトルクを生じ磁気記憶体を回転させるモータ
ーに好ましからぬ負担をかける。
Further, the frictional force generated between the head and the magnetic memory in the contact friction state causes a large torque particularly when many heads are attached, and imposes an unfavorable burden on the motor for rotating the magnetic memory.

また記録再生中に突発的にヘッドが磁気記憶体に接触
し、ヘッドと磁気記憶体間に大きな摩擦力が働き、ヘッ
ドおよび磁気記憶体が破壊されることがしばしば起こ
る。
Further, during recording / reproduction, the head suddenly contacts the magnetic storage body, a large frictional force acts between the head and the magnetic storage body, and the head and the magnetic storage body are often destroyed.

この様なヘッドと磁気記憶体との接触摩擦力からヘッド
および磁気記憶体を保護するために磁気記憶体の表面に
保護皮膜を被覆することが必要であり、またこの保護皮
膜は前記ヘッドと磁気記憶体間に生じる接触摩擦力を小
さく(すなわち摩擦力を小さく)することが要求され
る。
In order to protect the head and the magnetic memory body from such contact frictional force between the head and the magnetic memory body, it is necessary to coat the surface of the magnetic memory body with a protective film. It is required to reduce the contact frictional force generated between the memory bodies (that is, reduce the frictional force).

磁気記憶体の表面に潤滑層を設けることは上記接触摩擦
力を小さくするための一つの方法である。上記潤滑層は
その下地体と十分に結合していなければならない。潤滑
層がその下地と十分に結合していないと、ヘッドと磁気
記憶体の接触摩擦により下地体から取り去られるかある
いはヘッドのまわりおよびヘッドと磁気記憶体の間に毛
管現象により潤滑剤が多量にあつまり、記録再生時のヘ
ッドの浮揚安定性に悪影響をおよぼす。
Providing a lubricating layer on the surface of the magnetic memory is one method for reducing the contact frictional force. The lubricating layer must be well bonded to its substrate. If the lubrication layer is not sufficiently bonded to the substrate, it will be removed from the substrate due to contact friction between the head and the magnetic memory, or a large amount of lubricant will be generated around the head and between the head and the magnetic memory due to capillary action. In other words, the floating stability of the head during recording and reproduction is adversely affected.

上記潤滑層のヘッドとの接触摩擦力を小さくする効果は
ヘッドと磁気記憶体の界面に吸着ないし凝着が起こりに
くい非極性の分子層が介在することによりなされる。す
なわち潤滑層は磁気記憶体と結合する部分とヘッドと吸
着しにくい非極性部分とに配向していることが望まし
い。
The effect of reducing the contact frictional force between the lubricating layer and the head is achieved by interposing a non-polar molecular layer, which is unlikely to be adsorbed or adhered, at the interface between the head and the magnetic memory. That is, it is desirable that the lubricating layer be oriented in a portion that is coupled to the magnetic memory and a non-polar portion that is hard to adsorb to the head.

このような潤滑層としてシリコンオイル、フッ素油、フ
ロロシリコンなどのオイル類やオクタデシルトリクロロ
シラン、ヘキサメチルジシラザンなどのシランまたはシ
ラザン類が提案されている(特公昭55−40932号公
報)。これらの潤滑層は、各々優れた特性を示すもの
の、オイル類においては非晶質無機酸化物と化学結合す
る結合力が十分でなく、シランまたはシラザン類におい
てはヘッドと磁気記憶体の界面に吸着ないし凝着が起こ
りにくい非極性の分子層の分子量が十分でない。このた
めオイル類においては長期間の使用における潤滑剤の損
失、シランまたはシラザン類においてはヘッドと磁気記
憶体間に生じる接触摩擦力を小さくする効果が完全でな
いという問題があった。
As such a lubricating layer, oils such as silicone oil, fluorine oil, fluorosilicone, silanes such as octadecyltrichlorosilane, hexamethyldisilazane, or silazanes have been proposed (Japanese Patent Publication No. 55-40932). Although these lubricating layers each have excellent characteristics, they do not have sufficient bonding force to chemically bond with amorphous inorganic oxides in oils, and they are adsorbed on the interface between the head and magnetic memory in silanes or silazanes. Or the molecular weight of the non-polar molecular layer, which is less likely to cause adhesion, is not sufficient. Therefore, there is a problem in that the effect of reducing the lubricant loss in the case of long-term use in oils and the effect of reducing the contact frictional force generated between the head and the magnetic memory in silane or silazane are not perfect.

本発明の目的はこの問題点を解決した磁気記憶体および
その製造方法を提案することにある。
An object of the present invention is to propose a magnetic memory body and a method for manufacturing the magnetic memory body which solve this problem.

(問題点を解決するための手段) この発明の要旨とするところは、アルコキシシリル基ま
たはクロロシリル基とアミノ基を有する物質を単分子層
として酸化膜を被覆した磁気記憶体の上に形成した後、
アミノ基と化学結合とする官能基をもつフッ素化カーボ
ン系化合物を塗布することである。すなわち、アルコキ
シシリル基またはクロロシリル基とアミノ基を有する物
質の単分子層を酸化膜とフッ化カーボン系化合物を強固
に結びつけるバインダーとして使用し、フッ素化化合物
で下地体の表面を覆うことによって、下地体面上の表面
エネルギーを十分に低下させ、下地体とヘッドとの接触
摩擦力を小さくすることである。このバインダーとして
アルコキシシリル基またはクロロシリル基を有する単分
子膜を用いることおよびアミノ基と化学結合する官能基
を有するフッ素化化合物を用いることが重要な点であ
る。
(Means for Solving Problems) The gist of the present invention is that a substance having an alkoxysilyl group or a chlorosilyl group and an amino group is formed as a monomolecular layer on a magnetic memory body coated with an oxide film. ,
That is, a fluorinated carbon-based compound having a functional group that chemically bonds with an amino group is applied. That is, by using a monomolecular layer of a substance having an alkoxysilyl group or a chlorosilyl group and an amino group as a binder that firmly binds the oxide film and the fluorocarbon compound, and covering the surface of the base with a fluorinated compound, The surface energy on the body surface is sufficiently reduced to reduce the contact frictional force between the base body and the head. It is important to use a monomolecular film having an alkoxysilyl group or a chlorosilyl group as the binder and a fluorinated compound having a functional group that chemically bonds with the amino group.

(作用) 非晶質無機酸化物としてはポリ珪酸あるいはSiO2、ガラ
ス、アルミナなどのスパッタ膜を用いるとよい。アルコ
キシシリル基またはクロロシリル基は反応性に富み、こ
の非晶質無機酸化物の表面に存在するシラノール基(Si
−OH)や水酸基(−OH)と化学結合し、非晶質無機酸化
物と強固に結びついた単分子層を形成する。この単分子
層はアミノ基が基盤と反対側を向いて並んでいるためカ
ルボキシル基または酸クロライドを有するフッ素化化合
物と化学結合をつくることができ、非晶質無機酸化物と
フッ素化化合物を強固に結びつけるバインダーの役割を
果たすことができる。一方、フッ素か化合物は表面エネ
ルギーを低下させ、優れた潤滑効果を示す。したがっ
て、 一般式 または (X、Y、Zのうち少なくとも1つはアルコキシ基また
は塩素、他はアルキル基)で表される物質の単分子層と
分子内に少なくとも一つのカルボキシル基または酸クロ
ライドを有するフッ素化化合物を用いれば下地体と強固
に結合した優れた潤滑剤が得られる。このフッ素化化合
物としてはフッ素を含む化合物であればどんな物でも可
能であるが、潤滑剤としての性能を考慮すると炭素数10
〜20の長鎖炭化水素のフッ素置換体が良い。
(Function) As the amorphous inorganic oxide, it is preferable to use polysilicic acid or a sputtered film of SiO 2 , glass, alumina or the like. The alkoxysilyl group or chlorosilyl group is highly reactive, and the silanol group (Si
-OH) and hydroxyl group (-OH) are chemically bonded to each other to form a monomolecular layer firmly bonded to the amorphous inorganic oxide. Since this monolayer has amino groups facing away from the substrate, it can form a chemical bond with a fluorinated compound having a carboxyl group or an acid chloride, so that the amorphous inorganic oxide and the fluorinated compound are strongly bonded to each other. Can act as a binder to bind to. On the other hand, fluorine or a compound lowers the surface energy and shows an excellent lubricating effect. Therefore, the general formula Or (Wherein at least one of X, Y and Z is an alkoxy group or chlorine and the other is an alkyl group), a monolayer of a substance and a fluorinated compound having at least one carboxyl group or acid chloride in the molecule are used. For example, an excellent lubricant that is firmly bonded to the base material can be obtained. As the fluorinated compound, any compound containing fluorine can be used, but considering the performance as a lubricant, it has 10 carbon atoms.
Fluorine-substituted products of long-chain hydrocarbons of up to 20 are preferable.

また、このままでも下地体と高分子の接着性は優れてい
るが、非晶質無機酸化物を形成した後、プラズマ中で処
理してから高分子膜を形成すれば、表面のクリーニング
が完全になること、および、イオンの打ち込みにより高
分子と相互作用するラジカルが生成することなどの理由
で下地体と潤滑剤の接着性はさらに向上する。
Although the adhesiveness between the base material and the polymer is still excellent as it is, the surface can be completely cleaned by forming the polymer film after treating it in plasma after forming the amorphous inorganic oxide. In addition, because of the fact that radicals that interact with the polymer are generated by the implantation of ions, the adhesion between the base and the lubricant is further improved.

更に、記録および再生にとってはスペーシング(記録及
び再生時におけるヘッドと磁気記憶体の間隔)は小さい
方が有利である。このため潤滑層の膜厚はできる限り薄
いほうが望ましいが、この単分子膜とフッ素化化合物は
非常に薄い潤滑層を形成することが可能である。非晶質
無機酸化物の上に単分子層を形成しフッ素化化合物を塗
布した後、化学反応を起こし、単分子膜と化合物とを結
合させた後、フレオン洗浄することにより単分子層と結
合していない余分の潤滑剤が取り去られ、非常に薄い潤
滑層が形成される。単分子層との化学反応は塗布後自然
に進行するが焼成すれば短時間ですむ。
Further, for recording and reproduction, it is advantageous that the spacing (the distance between the head and the magnetic memory at the time of recording and reproduction) is small. Therefore, it is desirable that the thickness of the lubricating layer is as thin as possible, but the monomolecular film and the fluorinated compound can form a very thin lubricating layer. After forming a monomolecular layer on an amorphous inorganic oxide and applying a fluorinated compound, a chemical reaction is caused to combine the monomolecular film and the compound, and then combined with the monomolecular layer by Freon cleaning. The excess lubricant not applied is removed, forming a very thin lubricating layer. The chemical reaction with the monolayer proceeds naturally after application, but it takes only a short time if baked.

(実施例1) 以下、実施例により本発明を詳細に説明する。第1図
は、この発明の磁気記憶体の構成を示す断面図である。
図面において本発明の磁気記憶体は、合金円盤1上に非
磁性合金層2が被覆され、この被膜の研磨面上に金属磁
性薄膜媒体3が被覆されており、さらにこの上に非晶質
無機酸化物4が被覆され、さらにこの上に潤滑剤5が被
覆されている。
(Example 1) Hereinafter, the present invention will be described in detail with reference to Examples. FIG. 1 is a sectional view showing the structure of the magnetic memory body of the present invention.
In the drawing, in the magnetic memory according to the present invention, a non-magnetic alloy layer 2 is coated on an alloy disk 1, and a metal magnetic thin film medium 3 is coated on the polishing surface of this coating. The oxide 4 is coated, and the lubricant 5 is further coated thereon.

合金円盤1として旋盤加工および熱矯正によって十分小
さなうねり(円周方向および半径方向でともに50μm以
下)をもった面に仕上げられたディスク状アルミニウム
合金基盤上に非磁性合金層2としてニッケル−燐(Ni−
P)合金を焼く50μmの厚さにメッキし、このNi−Pメ
ッキ膜を機械的研磨により表面粗さ0.04μm以下、厚さ
約30μmまで鏡面仕上げしたのち、その上に金属磁性薄
膜媒体3としてコバルト−ニッケル−燐(Co−Ni−P)
合金を約0.05μmの厚さにメッキした。さらにこのCo−
Ni−P合金膜の上に、下に示した組成の溶液を十分に混
合し、ごみまたは析出したSiO2を0.5μmの濾過膜を通
して取り除いた後、回転塗布法により塗布した。
Nickel-phosphorus as the non-magnetic alloy layer 2 on the disk-shaped aluminum alloy substrate finished on the surface having a sufficiently small waviness (50 μm or less in both the circumferential direction and the radial direction) by lathe processing and heat correction as the alloy disk 1 Ni-
P) An alloy is baked and plated to a thickness of 50 μm, and the Ni-P plated film is mechanically polished to a mirror finish to a surface roughness of 0.04 μm or less and a thickness of about 30 μm, and a metal magnetic thin film medium 3 is formed thereon. Cobalt-Nickel-Phosphorus (Co-Ni-P)
The alloy was plated to a thickness of about 0.05 μm. Furthermore, this Co-
A solution having the composition shown below was thoroughly mixed on the Ni-P alloy film, dust or deposited SiO 2 was removed through a 0.5 μm filter film, and then applied by spin coating.

テトラヒドロキシシラン11% エチルアルコール溶液:20重量% n−ブチルアルコール:80重量% その後このディスク基板を200℃の温度で3時間焼成しC
o−Ni−P合金膜の上にポリ珪酸の被膜を形成した。
Tetrahydroxysilane 11% Ethyl alcohol solution: 20% by weight n-Butyl alcohol: 80% by weight After that, the disc substrate was baked at a temperature of 200 ° C. for 3 hours C
A polysilicic acid film was formed on the o-Ni-P alloy film.

この基板を3−アミノプロピリトリメトキシシラン[H2
N(CH23Si(OCH3]の蒸気中に室温で30分間保持
した後、100℃の温度で30分間焼成し単分子膜を形成し
た。ノナデカフルオロデカノイックアシドの5重量%ト
ルエン溶液を0.2μmのフィルターを通して濾過した。
この溶液を3−アミノプロピルトリメトシシランの単分
子層を形成した前記ディスク基板に滴下し、100℃の温
度で40分間焼成を行なった後、フレオンで基板を洗浄
し、未反応のノナデカフルオロデカノイックアシドを洗
い落とした。
This substrate is treated with 3-aminopropyritrimethoxysilane [H 2
N (CH 2 ) 3 Si (OCH 3 ) 3 ] was held at room temperature for 30 minutes and then baked at 100 ° C. for 30 minutes to form a monomolecular film. A 5% by weight solution of nonadecafluorodecanoic acid in toluene was filtered through a 0.2 μm filter.
This solution was dropped onto the disk substrate on which a monolayer of 3-aminopropyltrimethosisilane was formed, baked at 100 ° C for 40 minutes, and then washed with Freon to remove unreacted nonadecafluoro. The decanoic acid was washed off.

フッ素化化合物を塗布する前後の基板表面の表面エネル
ギーを種々の表面張力をもつ液滴の接触角を測定し計算
するとポリ珪酸被膜上の43erg/cm2から重合体塗布後で
は15erg/cm2と表面エネルギーが著しく低下しヘッドと
下地体との接着を防止する効果が大きいことがわかっ
た。
If the surface energy of the substrate before and after the surface of applying a fluorinated compound by measuring the contact angle of droplets with different surface tension is calculated by the following polymer coating from 43erg / cm 2 on the polysilicic acid coating and 15erg / cm 2 It was found that the surface energy was remarkably lowered and the effect of preventing the adhesion between the head and the base body was great.

次に、このディスク基盤とヘッドとの間に働く動摩擦係
数を測定した。動摩擦係数はヘッドに歪ゲージを連結
し、ディスクを一定速度で回転させたときに生じるヘッ
ドとディスク間の動摩擦力を測定し、これをヘッドに加
えた荷重で割ってもとめた。測定は荷重15g、滑り速度1
00mm/minの条件で行なった。その結果、動摩擦係数の値
として0.171が得られ、潤滑層を形成しない場合の0.546
に比べ動摩擦係数の値を小さくすることができた。
Next, the coefficient of dynamic friction acting between the disk base and the head was measured. The dynamic friction coefficient was determined by connecting a strain gauge to the head, measuring the dynamic friction force between the head and the disk generated when the disk was rotated at a constant speed, and dividing this by the load applied to the head. Measurement is load 15g, sliding speed 1
It was performed under the condition of 00 mm / min. As a result, 0.171 was obtained as the value of the dynamic friction coefficient, which was 0.546 when the lubricating layer was not formed.
It was possible to reduce the value of the dynamic friction coefficient as compared with.

また、この潤滑層を形成したディスク基盤と荷重70gの
モノリシックヘッドを用いてディスクとヘッドの接触摩
擦試験を30000回繰り返し行なったが、ヘッドクラッシ
ュおよびヘッドによる接触摩擦によるディスクの表面状
態の変化は皆無であった。
In addition, the contact friction test between the disk and the head was repeated 30,000 times using a disk base on which this lubricating layer was formed and a monolithic head with a load of 70 g, but there was no change in the surface condition of the disk due to head crash or contact friction by the head. Met.

(実施例2) 実施例1と同様の方法で作成し、ポリ珪酸被膜を形成し
たディスク基板を3−アミノプロピルトリメトキシシラ
ンの蒸気中に30分間保持した後100℃の温度で30分間焼
成し単分子膜を形成した。ノナデカフルオロデカノイッ
クアシドから塩化チオニルを触媒に合成したノナデカフ
ルオロデカイノイックアシドクロライドの1重量%のト
ルエン溶液を作成し、0.2μmのフィルターを通して濾
過した。3−アミノプロピルトリメトキシシランの単分
子膜層を形成した前記ディスク基板にこのフッ素化化合
物を滴下し100℃の温度で40分間焼成した後フレオンで
未反応のノナダカフルオロデカノイックアシドクロライ
ドを洗い落とした。実施例1と同様の方法で表面エネル
ギーと動摩擦係数の値を求めた。その結果、フッ素化化
合物を塗布することにより表面エネルギーの値はポリ珪
酸被膜上の43erg/cm2から17erg/cm2に低下し、動摩擦係
数の値は0.546から0.187小さくすることできた。
(Example 2) A disk substrate prepared in the same manner as in Example 1 and having a polysilicic acid film formed thereon was held in vapor of 3-aminopropyltrimethoxysilane for 30 minutes and then baked at a temperature of 100 ° C for 30 minutes. A monolayer was formed. A 1% by weight toluene solution of nonadecafluorodecainoic acid chloride synthesized from thionyl chloride as a catalyst from nonadecafluorodecanoic acid was prepared and filtered through a 0.2 μm filter. This fluorinated compound was dropped on the disk substrate on which a monomolecular layer of 3-aminopropyltrimethoxysilane was formed, and the mixture was baked at a temperature of 100 ° C. for 40 minutes, and then unreacted nonadacafluorodecanoic acid chloride was removed with Freon. I washed it off. The values of the surface energy and the dynamic friction coefficient were obtained by the same method as in Example 1. As a result, the value of surface energy by applying a fluorinated compound is reduced from 43erg / cm 2 on the polysilicic acid coating 17erg / cm 2, the value of the dynamic friction coefficient was able to 0.187 smaller from 0.546.

また実施例1同様に耐摩耗性を評価したが、30000回の
接触摩擦試験によるディスクの表面状態の変化は皆無で
あった。
Further, the abrasion resistance was evaluated in the same manner as in Example 1, but there was no change in the surface condition of the disk due to the contact friction test of 30,000 times.

(実施例3) 実施例1と同様の方法で作成したディスク基板のCo−Ni
−P合金膜の上にポリ珪酸被膜のかわりにAl2O3(非晶
質アルミナ)をスパッタ法により被覆した。このディス
ク基板を3−アミノプロピルトリメトキシシランの蒸気
中に室温で1時間焼成し単分子層を形成した。実施例1
で作成したフッ素化化合物溶液を滴下し100℃の温度で4
0分間焼成した後フレオンで未反応のフッ素化化合物を
洗い落とし、実施例1と同様の方法で表面エネルギー、
動摩擦係数の値を求めた。その結果、表面エネルギーは
非晶質アルミナ上の45erg/cm2からフッ素化化合物上の1
5erg/cm2に低下し動摩擦係数の値は0.270から0.175に小
さくすることができた。
(Example 3) Co-Ni of a disk substrate prepared by the same method as in Example 1
Instead of the polysilicic acid coating, Al 2 O 3 (amorphous alumina) was coated on the -P alloy film by the sputtering method. This disk substrate was baked in vapor of 3-aminopropyltrimethoxysilane at room temperature for 1 hour to form a monomolecular layer. Example 1
Add the fluorinated compound solution prepared in step 4.
After baking for 0 minutes, the unreacted fluorinated compound was washed off with Freon, and the surface energy was measured in the same manner as in Example 1.
The value of the dynamic friction coefficient was obtained. As a result, the surface energy is 45 erg / cm 2 on amorphous alumina to 1 on fluorinated compounds.
It was reduced to 5 erg / cm 2 and the value of the dynamic friction coefficient could be reduced from 0.270 to 0.175.

また実施例1同様に耐摩耗性を評価したが、30000回の
接触摩擦試験によるディスクの表面状態の変化は皆無で
あった。
Further, the abrasion resistance was evaluated in the same manner as in Example 1, but there was no change in the surface condition of the disk due to the contact friction test of 30,000 times.

(実施例4) 実施例1と同様にして3−アミノプロピルトリメトキシ
シランを3−アミノプロピルトリエトキシシラン[NH2
(CH23Si(OC2H5]にかえ、他の条件は全く同様
にして実験を行なった。その結果、表面エネルギー値は
ポリ珪酸上の43erg/cm2から重合体上の15erg/cm2に低下
し、動摩擦係数の値としてフッ素化化合物塗布後に0.17
5が得られ、ポリ珪酸被膜上の0.546に比べ、小さくする
ことができた。
(Example 4) In the same manner as in Example 1, 3-aminopropyltrimethoxysilane was replaced with 3-aminopropyltriethoxysilane [NH 2
Instead of (CH 2 ) 3 Si (OC 2 H 5 ) 3 ], the experiment was conducted under exactly the same other conditions. As a result, the surface energy value is reduced from 43erg / cm 2 on the polysilicic acid to 15erg / cm 2 on the polymer, after the fluorinated compound applied as the value of the dynamic friction coefficient 0.17
5 was obtained and could be made smaller than 0.546 on the polysilicic acid film.

また実施例1同様に耐摩耗性を評価したが、30000回の
接触摩擦試験によるディスクの表面状態の変化は皆無で
あった。
Further, the abrasion resistance was evaluated in the same manner as in Example 1, but there was no change in the surface condition of the disk due to the contact friction test of 30,000 times.

(実施例5) 実施例1と同様にして3−アミノプロピルトリメトキシ
シランを3−アミノプロピルトリクロロシラン[NH2(C
H23SiCl3]にかえ、他の条件は全く同様にして実験を
行なった。その結果、表面エネルギー値はポリ珪酸上の
43erg/cm2から重合体上の14erg/cm2に低下し、動摩擦係
数の値としてフッ素化化合物塗布後に0.170が得られ、
ポリ珪酸被膜上の0.546に比べ、小さくすることができ
た。
(Example 5) In the same manner as in Example 1, 3-aminopropyltrimethoxysilane was replaced with 3-aminopropyltrichlorosilane [NH 2 (C
H 2 ) 3 SiCl 3 ], and other conditions were exactly the same. As a result, the surface energy value on polysilicic acid
Decreased from 43erg / cm 2 to 14erg / cm 2 on the polymer, 0.170 is obtained after fluorinated compounds applied as a value of dynamic friction coefficient,
It can be made smaller than 0.546 on the polysilicic acid film.

また実施例1同様に耐摩耗性を評価したが、30000回の
接触摩擦試験によるディスクの表面状態の変化は皆無で
あった。
Further, the abrasion resistance was evaluated in the same manner as in Example 1, but there was no change in the surface condition of the disk due to the contact friction test of 30,000 times.

(実施例6) 実施例1と同様にして3−アミノプロピルトリメトキシ
シランをp−アミノフェニルトリメトキシシラン にかえ、他の条件は全く同様にして実験を行なった。そ
の結果、表面エネルギーの値はポリ珪酸上の43erg/cm2
からフッ素化化合物上の16erg/cm2に低下し、動摩擦係
数の値として重合体塗布後0.181が得られ、ポリ珪酸被
膜上の0.546に比べ、小さくすることができた。
(Example 6) In the same manner as in Example 1, 3-aminopropyltrimethoxysilane was replaced with p-aminophenyltrimethoxysilane. Instead, the experiment was conducted under the same conditions other than the above. As a result, the surface energy value is 43 erg / cm 2 on polysilicic acid.
To 16 erg / cm 2 on the fluorinated compound, the coefficient of kinetic friction was 0.181 after coating the polymer, which was smaller than 0.546 on the polysilicic acid film.

また実施例1同様に耐摩耗性を評価したが、30000回の
接触摩擦試験によるディスクの表面状態の変化は皆無で
あった。
Further, the abrasion resistance was evaluated in the same manner as in Example 1, but there was no change in the surface condition of the disk due to the contact friction test of 30,000 times.

(実施例7) 実施例1と同様にして3−アミノプロピルトリメトキシ
シランを3−アミノプロピルメチルジエトキシシラン
[NH2(CH23Si(OC2H52CH3]にかえ、この化合物の
蒸気中に基板を室温で保持する時間のみ1時間とし、他
の条件は全く同様にして実験を行なった。その結果、表
面エネルギーの値はポリ珪酸上の43erg/cm2から重合体
上の18erg/cm2に低下し、動摩擦係数の値としてフッ素
化化合物塗布後0.190が得られ、ポリ珪酸被膜上の0.546
に比べ、小さくすることができた。
(Example 7) Example 1 In the same manner as 3-aminopropyltrimethoxysilane 3-aminopropylmethyldiethoxysilane [NH 2 (CH 2) 3 Si (OC 2 H 5) 2 CH 3] Nikae, The experiment was conducted under the same conditions except that the substrate was kept in the vapor of this compound for 1 hour at room temperature. As a result, the value of the surface energy decreases from 43erg / cm 2 on the polysilicic acid to 18erg / cm 2 on the polymer, fluorinated compounds after coating 0.190 is obtained as the value of dynamic friction coefficient, on polysilicic acid coating 0.546
I was able to make it smaller than.

また実施例1同様に耐摩耗性を評価したが、30000回の
接触摩擦試験によるディスクの表面状態の変化は皆無で
あった。
Further, the abrasion resistance was evaluated in the same manner as in Example 1, but there was no change in the surface condition of the disk due to the contact friction test of 30,000 times.

(実施例8) 実施例1と同様の方法で作成し、ポリ珪酸被膜を形成し
たディスク基板を平行平板型のエッチング装置に入れ、
Arを用いて、流量18sccm、電力密度0.35w/cm2、圧力1.3
Pa、バイアス電位1KVの条件で2分間エッチングを行な
った後、実施例1と同様に3−アミノプロピルトリメト
キシシランの蒸気中で30分間保持し、100℃の温度で30
分間焼成し単分子層を形成した。このディスク基板に実
施例1で作成したフッ素化化合物溶液を滴下し、100℃
で40分間焼成した後フレオンで余分のフッ素化化合物を
洗い落とし、実施例1と同様の方法で表面エネルギー、
動摩擦係数の値を求めた。その結果、表面エネルギーの
値はArプラズマで処理した後のポリ珪酸被膜上の50erg/
cm2からフッ素化化合物上の14erg/cm2とArプラズマ処理
をしない場合よりもさらに低下し、動摩擦係数の値もポ
リ珪酸上の0.614から潤滑層形成後の0.101に小さくする
ことができた。
Example 8 A disk substrate prepared in the same manner as in Example 1 and having a polysilicic acid film formed thereon was placed in a parallel plate type etching apparatus,
Flow rate 18sccm, power density 0.35w / cm 2 , pressure 1.3 using Ar
After etching for 2 minutes under the conditions of Pa and a bias potential of 1 KV, as in Example 1, holding in vapor of 3-aminopropyltrimethoxysilane for 30 minutes, the temperature was 100 ° C. for 30 minutes.
It was baked for a minute to form a monomolecular layer. The fluorinated compound solution prepared in Example 1 was dropped onto this disk substrate, and the temperature was raised to 100 ° C.
After baking for 40 minutes, the excess fluorinated compound was washed off with Freon, and the surface energy was measured in the same manner as in Example 1.
The value of the dynamic friction coefficient was obtained. As a result, the surface energy value was 50 erg / g on the polysilicic acid film after Ar plasma treatment.
Further drops than without the 14erg / cm 2 and Ar plasma treatment on the fluorinated compounds from cm 2, the value of the dynamic friction coefficient could be reduced to 0.101 after lubricating layer formed from 0.614 on polysilicic acid.

なお、実施例1で作成したポリ珪酸の被膜は形成後長時
間放置すると実施例1と同様の処理をおこなっても表面
エネルギー、動摩擦係数の低下は十分でないがArプラズ
マで処理すると放置時間にかかわらず同じ結果が得ら
れ、Arプラズマ処理による表面の改質が効果的であるこ
とがわかった。
The polysilicic acid coating prepared in Example 1 is not sufficiently reduced in surface energy and dynamic friction coefficient even if the same treatment as in Example 1 is carried out if it is left for a long time after formation, but if it is treated with Ar plasma, it will take a long time. The same result was obtained, and it was found that the surface modification by Ar plasma treatment was effective.

また、実施例1と同様に30000回の接触摩擦試験による
ディスク表面状態の変化は皆無であった。
Further, as in Example 1, there was no change in the disk surface state due to the contact friction test of 30,000 times.

(実施例9) 実施例3と同様の方法で作成し非晶質アルミナを被覆し
たディスク基板に、実施例8と同様の条件でArプラズマ
による処理を行なった。その後、この基板を3−アミノ
プロピルトリメトキシシランの蒸気中に室温で30分間保
持した後、100℃の温度で30分間焼成し単分子層を形成
した。実施例2で作成したフッ素化化合物溶液を滴下し
100℃の温度で40分間焼成した後フレオンで余分の重合
体を洗い落とした。実施例1と同様の方法で表面エネル
ギーと動摩擦係数の値を求めた。その結果、表面エネル
ギーの値はArプラズマで処理したアルミナ上の52erg/cm
2からフッ素化化合物滴下後の0.177に小さくすることが
できた。
Example 9 A disk substrate prepared by the same method as in Example 3 and coated with amorphous alumina was treated with Ar plasma under the same conditions as in Example 8. After that, the substrate was kept in vapor of 3-aminopropyltrimethoxysilane at room temperature for 30 minutes and then baked at 100 ° C. for 30 minutes to form a monomolecular layer. The fluorinated compound solution prepared in Example 2 was added dropwise.
After baking at a temperature of 100 ° C. for 40 minutes, excess polymer was washed off with Freon. The values of the surface energy and the dynamic friction coefficient were obtained by the same method as in Example 1. As a result, the surface energy value was 52 erg / cm on alumina treated with Ar plasma.
It was possible to reduce the value from 2 to 0.177 after dropping the fluorinated compound.

また、実施例1と同様に30000.回の接触摩擦試験による
ディスクの表面状態の変化は皆無であった。
Further, as in Example 1, there was no change in the surface condition of the disk due to the contact friction test of 30,000 times.

(実施例10) 実施例8と同様にして3−アミノプロピルトリメトキシ
シランのみ3−アミノプロピルメチルジエトキシシラン
にかえ、他の条件は全く同様にして実験を行なった。そ
の結果、表面エネルギーの値はポリ珪酸被膜上の50erg/
cm2から重合体上の11erg/cm2に低下し、動摩擦係数の値
としてフッ素化化合物塗布後の0.171が得られ、ポリ珪
酸被膜上の0.546に比べ、小さくすることができた。
(Example 10) In the same manner as in Example 8, only 3-aminopropyltrimethoxysilane was replaced with 3-aminopropylmethyldiethoxysilane, and the other conditions were exactly the same. As a result, the value of surface energy is 50erg /
It drops from cm 2 to 11Erg / cm 2 on the polymer, 0.171 after fluorinated compound coating is obtained as the value of dynamic friction coefficient, compared to 0.546 on polysilicic acid coating, could be reduced.

また実施例1同様に耐摩耗性を評価したが、30000回の
接触摩擦試験によるディスクの表面状態の変化は皆無で
あった。
Further, the abrasion resistance was evaluated in the same manner as in Example 1, but there was no change in the surface condition of the disk due to the contact friction test of 30,000 times.

(実施例11) 実施例1と同様にして、ノナデカフルオロデカノイック
アシドのみペンタデカフルオロオクタノイックアシドに
かえその他の条件は実施例1と全く同様にして実験を行
なった。その結果、表面エネルギーの値はポリ珪酸上の
43erg/cm2から重合体上の18erg/cm2に低下し、動摩擦係
数の値としてフッ素化化合物塗布後0.190が得られ、ポ
リ珪酸被膜上の0.546に比べ、小さくすることができ
た。
(Example 11) In the same manner as in Example 1, only nonadecafluorodecanoic acid was replaced with pentadecafluorooctanoic acid, and other conditions were the same as in Example 1 for the experiment. As a result, the value of surface energy is
It decreased from 43erg / cm 2 to 18erg / cm 2 on the polymer, fluorinated compounds after coating 0.190 is obtained as the value of dynamic friction coefficient, compared to 0.546 on polysilicic acid coating, could be reduced.

また実施例1同様に耐摩耗性を評価したが、30000回の
接触摩擦試験によるディスクの表面状態の変化は皆無で
あった。
Further, the abrasion resistance was evaluated in the same manner as in Example 1, but there was no change in the surface condition of the disk due to the contact friction test of 30,000 times.

(発明の効果) この様に本発明に置ける磁気記憶体はヘッドと磁気記憶
体間に生じる接触摩擦力を小さくする効果が大きく、磁
気ディスク装置および磁気ドラム装置等にその応用が期
待されるものである。
(Effects of the Invention) As described above, the magnetic storage device according to the present invention has a great effect of reducing the contact frictional force generated between the head and the magnetic storage device, and is expected to be applied to magnetic disk devices, magnetic drum devices, and the like. Is.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の磁気記憶体の断面を示す図である。 図において1は合金円盤、2は鏡面仕上げされた非磁性
合金層、3は金属磁性薄膜媒体、4は非晶質無機酸化
物、5は配向性潤滑剤層、6は保護被膜であり、非晶質
無機酸化物4と配向潤滑層5からなっている。また配向
性潤滑層5は単分子層と重合体塗布膜からなっている。
FIG. 1 is a view showing a cross section of a magnetic memory body of the present invention. In the figure, 1 is an alloy disk, 2 is a mirror-finished non-magnetic alloy layer, 3 is a metal magnetic thin film medium, 4 is an amorphous inorganic oxide, 5 is an oriented lubricant layer, and 6 is a protective film. It is composed of a crystalline inorganic oxide 4 and an oriented lubricating layer 5. The orientation lubricating layer 5 is composed of a monomolecular layer and a polymer coating film.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 アラン ケント エンゲル 東京都杉並区阿佐谷北4丁目28番14―709 号 阿佐谷コーポラス (56)参考文献 特開 昭54−45103(JP,A) 特開 昭62−145532(JP,A) 特開 昭54−40606(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Alan Kent Engel 4-28-14-709, Asagaya Kita, Suginami-ku, Tokyo Asaya Corpora (56) References JP-A-54-45103 (JP, A) JP-A-SHO 62-145532 (JP, A) JP-A-54-40606 (JP, A)

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】鏡面研磨された非磁性合金層が被覆された
合金円盤上または鏡面研磨された合金円盤上に金属磁性
薄膜媒体が被覆されており、この上に非晶質無機酸化物
層が被覆され、さらにこの上に前記非晶質無機酸化物層
と固着可能な配向性潤滑剤が被覆されている磁気記憶体
において、前記配向性潤滑剤が、一般式 または (X、Y、Zのうち少なくとも1つはアルコキシ基また
は塩素、他はアルキル基)で表される物質の単分子層と
分子内に少なくとも一つのカルボキシ基または酸クロラ
イドを含むフッ素化カーボン系化合物との反応生成物か
らなることを特徴とする磁気記憶体。
1. A metal magnetic thin film medium is coated on an alloy disc coated with a mirror-polished non-magnetic alloy layer or on a mirror-polished alloy disc, and an amorphous inorganic oxide layer is formed on the medium. In the magnetic memory, which is coated and further coated with an orientational lubricant capable of sticking to the amorphous inorganic oxide layer, the orientational lubricant is represented by the general formula: Or (At least one of X, Y and Z is an alkoxy group or chlorine, and the other is an alkyl group), and a fluorinated carbon-based compound containing a monomolecular layer of a substance and at least one carboxy group or acid chloride in the molecule. A magnetic memory comprising a reaction product with.
【請求項2】鏡面研磨された非磁性合金層が被覆された
合金円盤上または鏡面研磨された合金円盤上に金属磁性
薄膜媒体を被覆し、この上に非晶質無機酸化物層を被覆
し、さらに前記非晶質無機酸化物の上に、一般式 または (X、Y、Zのうち少なくとも1つはアルコキシ基また
は塩素、他はアルキル基)で表される物質の単分子層を
気相成長させた後、分子内に少なくとも一つのカルボキ
シル基または酸クロライドを含むフッ素化カーボン系化
合物を塗布しまたは塗布後焼成して前記非晶質無機酸化
物層と前記化合物を結合させることを特徴とする磁気記
憶体の製造方法。
2. A metal magnetic thin film medium is coated on an alloy disc coated with a mirror-polished non-magnetic alloy layer or on a mirror-polished alloy disc, and an amorphous inorganic oxide layer is coated thereon. Further, on the above amorphous inorganic oxide, the general formula Or (At least one of X, Y, and Z is an alkoxy group or chlorine, and the other is an alkyl group) is vapor-deposited, and then at least one carboxyl group or acid chloride is contained in the molecule. A method of manufacturing a magnetic memory body, characterized in that the fluorinated carbon-based compound containing is applied or baked after applying to bond the amorphous inorganic oxide layer and the compound.
【請求項3】鏡面研磨された非磁性合金層を被覆した合
金円盤上または鏡面研磨された合金円盤上に金属磁性薄
膜媒体を被覆し、この上に非晶質無機酸化物層を被覆
し、プラズマ中で処理し、前記非晶質無機酸化物層の上
に、一般式 または (X、Y、Zのうち少なくとも1つはアルコキシ基また
は塩素、他はアルキル基)で表される物質の単分子層を
気相成長させた後、分子内に少なくとも一つのカルボキ
シル基または酸クロライドを含むフッ素化カーボン系化
合物を塗布しまたは塗布後焼成して前記非晶質無機酸化
物層と前記化合物を結合させることを特徴とする磁気記
憶体の製造方法。
3. An alloy disc coated with a mirror-polished non-magnetic alloy layer or a mirror-polished alloy disc is coated with a metal magnetic thin film medium, and an amorphous inorganic oxide layer is coated thereon. Treated in plasma, on the amorphous inorganic oxide layer, the general formula Or (At least one of X, Y, and Z is an alkoxy group or chlorine, and the other is an alkyl group) is vapor-deposited, and then at least one carboxyl group or acid chloride is contained in the molecule. A method of manufacturing a magnetic memory body, characterized in that the fluorinated carbon-based compound containing is applied or baked after applying to bond the amorphous inorganic oxide layer and the compound.
JP61196101A 1986-08-20 1986-08-20 Magnetic storage body and manufacturing method thereof Expired - Lifetime JPH0673177B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61196101A JPH0673177B2 (en) 1986-08-20 1986-08-20 Magnetic storage body and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61196101A JPH0673177B2 (en) 1986-08-20 1986-08-20 Magnetic storage body and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPS6352319A JPS6352319A (en) 1988-03-05
JPH0673177B2 true JPH0673177B2 (en) 1994-09-14

Family

ID=16352240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61196101A Expired - Lifetime JPH0673177B2 (en) 1986-08-20 1986-08-20 Magnetic storage body and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPH0673177B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2532683B2 (en) * 1989-10-20 1996-09-11 松下電器産業株式会社 Recording medium manufacturing method
JP4251318B2 (en) * 2003-06-25 2009-04-08 富士電機デバイステクノロジー株式会社 Magnetic recording medium and method for manufacturing the same

Also Published As

Publication number Publication date
JPS6352319A (en) 1988-03-05

Similar Documents

Publication Publication Date Title
US4069360A (en) Magnetic record member and process for manufacturing the same
US4152487A (en) Magnetic record member
US4390562A (en) Process of manufacturing a magnetic record member
JPH0765351A (en) Magnetic storage body and manufacturing method thereof
JPH07105034B2 (en) Magnetic recording body
JPH0673177B2 (en) Magnetic storage body and manufacturing method thereof
JPH0465454B2 (en)
JPH079702B2 (en) Magnetic memory manufacturing method
JPH079699B2 (en) Magnetic disk storage medium
JPH0668832B2 (en) Magnetic storage body and manufacturing method thereof
JP2924052B2 (en) Magnetic storage body and method of manufacturing the same
US20090263592A1 (en) Plasma-enhanced chemical vapor deposition of advanced lubricant for thin film storage medium
JPS62145533A (en) Magnetic memory medium and its production
JPH07107736B2 (en) Magnetic storage body and manufacturing method thereof
JPH01240598A (en) Magnetic storage and production thereof
JP2007115388A (en) Method of housing magnetic disk glass substrate, method of manufacturing magnetic disk glass substrate, magnetic disk glass substrate storage, method of delivering magnetic disk glass substrate, and method of manufacturing magnetic disk
JPH0554373A (en) Magnetic recording medium
JPH0668831B2 (en) Magnetic storage body and manufacturing method thereof
JPS63816A (en) Magnetic memory medium and its production
US5985105A (en) Method of sputtering protective overcoats with improved corrosion resistance
JPS5938649B2 (en) Magnetic memory and its manufacturing method
JP2638228B2 (en) Manufacturing method of magnetic recording medium
JPS63820A (en) Magnetic memory body and its production
JP2000030245A (en) Magnetic recording medium and magnetic recording device
JPH0388189A (en) Magnetic disk device

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term